1、硅量子材料与器件

2、半导体材料与器件

3、半导体新能源应用

本研究组主要从事硅量子材料与芯片研究，主要关注量子霍尔效应，二维电子气输运特性方向研究，欢迎感兴趣的同学报考本研究组的硕博连读生。

 

联系方式：
通信地址：北京市海淀区清华东路甲35号半导体所照明中心
电子邮件：gdyuan@semi.ac.cn
电话：010-82305494
邮政编码：100083

080903-微电子学与固体电子学

硅量子材料与器件
半导体材料与器件
半导体新能源应用

2001-09--2006-06   浙江大学   博士
1995-09--1999-06   北京科技大学   学士

   

2012-01~现在, 中国科学院半导体研究所, 研究员
2011-01~2011-12,德国柏林洪堡大学, 博士后
2009-09~2010-12,德国波鸿鲁尔大学, 博士后
2006-08~2009-09,香港城市大学, 博士后

   

[1] Jianghao Lu, Ze Li, Di Zhang, Luhang Song, Xiaoyan Cai, Liang Mao, Zhiqiang Liu, Zhijie Wang, Xiuquan Gu, Yuan, Guodong. Enhanced solar hydrogen evolution by laminated integration of n+pSiiP TiO2 Pt inverted pyramid black silicon photocathode. J. Alloy Compound[J]. 2024, 第 10 作者  通讯作者  null(null): 
[2] Kong, Chongtao, Song, Lin, Zhao, Xupeng, Wang, Hailong, Zhao, Jianhua, Yuan, Guodong, Zhang, Xinhui. Enhancing Magnetic Damping under GaAs Band-Edge Photoexcitation in a Co 2 FeAl/ n -GaAs Heterojunction. ACS APPLIED MATERIALS & INTERFACES[J]. 2024, 第 6 作者  通讯作者  16(13): 17041-17050, http://dx.doi.org/10.1021/acsami.4c01858.
[3] Yuandong Wang, Guozhang Wu, Jing Zhang, Xuanyu Wu, Guodong Yuan, Jianguo Liu. Genetic algorithm-enhanced design of ultra-broadband tunable terahertz metasurface absorber. OPTICS AND LASER TECHNOLOGY. 2024, 第 5 作者  通讯作者  170: http://dx.doi.org/10.1016/j.optlastec.2023.110262.
[4] Zhang, Di, Yuan, Guodong, Liu, Yumeng, Li, Ze, Song, Luhang, Lu, Jun, Zhang, Jieyin, Zhang, Jianjun, Luo, Junwei. Gate-controlled hysteresis curves and dual-channel conductivity in an undoped Si/SiGe 2DEG structure. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2023, 第 2 作者  通讯作者  56(8): http://dx.doi.org/10.1088/1361-6463/acb55e.
[5] Guodong Yuan, Ze Li, Di Zhang, Yu Meng Liu, Hao Ran Long, Li He, De Chen Wang, Zhong Min Wei, Jun Wei Luo. Effect of high temperature annealing on cryogenic transport properties of silicon MOSFETs with a thin SiO2/HfO2 stacked dielectric. SEMICONDUCTOR SCIENCE AND TECHNOLOGY[J]. 2023, 第 1 作者  通讯作者  38: 115002-1, 
[6] Liu, Yumeng, Zhao, Shuai, Zhang, Di, Liu, Zhiqiang, Yuan, Guodong. Microstructure-regulated inverted pyramidal Si photocathodes for efficient hydrogen generation. NANOSCALE[J]. 2022, 第 5 作者  通讯作者  14(47): 17571-17580, 
[7] Zhao, Shuai, Yuan, Guodong, Zhang, Di, Liu, Yumeng, Lu, Jun, Han, Weihua, Luo, Junwei. Electron transport characteristics in dual gate-controlled 30 nm-thick silicon membrane. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2022, 第 2 作者  通讯作者  55(49): 
[8] Lin, Xin, Li, Jingwei, Zhu, Lujun, Xie,Xinyue, Liu, Qianbiao, Wei,Dahai, Yuan,Guodong, Zhu,Lijun. Strong enhancement of spin-orbit torques in ferrimagnetic Ptx(Si3N4)1-x/CoTb bilayers by Si3N4 doping. Physical Review B[J]. 2022, 第 7 作者L140407, https://journals.aps.org/prb/abstract/10.1103/PhysRevB.106.L140407.
[9] Zhao, Shuai, Yuan, Guodong, Zhang, Di, Wu, Xingjun, Han, Weihua. Scattering suppression at MOS interface towards high-mobility Si-based field-effect transistors. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING[J]. 2022, 第 2 作者  通讯作者  138: http://dx.doi.org/10.1016/j.mssp.2021.106308.
[10] Zhao, Shuai, Yuan, Guodong, Zhu, Qiuhao, Song, Luhang, Zhang, Di, Liu, Yumeng, Lu, Jun, Han, Weihua, Luo, Junwei. Cryogenic Mobility Enhancement Si MOS Devices via SiO2 Regrowth. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2022, 第 2 作者  通讯作者  69(5): 2585-2589, http://dx.doi.org/10.1109/TED.2022.3158628.
[11] S. Zhao, G. Yuan, D. Zhang, Y. Liu, J. Lu, W. Han, J. Luo. Electron transport characteristics in dual gate-controlled 30nm-thick silicon membrane. J. Phy. D: Appl. Phys.[J]. 2022, 55(495105): 1-9, 
[12] Zhang, Di, Yuan, Guodong, Zhao, Shuai, Lu, Jun, Luo, Junwei. Low-thermal-budget n-type ohmic contacts for ultrathin Si/Ge superlattice materials. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2022, 第 2 作者  通讯作者  55(35): http://dx.doi.org/10.1088/1361-6463/ac7366.
[13] Ren, Fang, Liu, Bingyao, Chen, Zhaolong, Yin, Yue, Sun, Jingyu, Zhang, Shuo, Jiang, Bei, Liu, Bingzhi, Liu, Zhetong, Wang, Jianwei, Liang, Meng, Yuan, Guodong, Yan, Jianchang, Wei, Tongbo, Yi, Xiaoyan, Wang, Junxi, Zhang, Yong, Li, Jinmin, Gao, Peng, Liu, Zhongfan, Liu, Zhiqiang. Van der Waals epitaxy of nearly single-crystalline nitride films on amorphous graphene-glass wafer. SCIENCE ADVANCES[J]. 2021, 第 12 作者7(31): http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000682353100006.
[14] Zhao, Shuai, Yuan, Guodong, Zhang, Di, Xu, Pengfei, Li, Guozheng, Han, Weihua. Formation and elimination mechanism of thermal blistering in Al2O3/Si system. JOURNAL OF MATERIALS SCIENCE[J]. 2021, 第 2 作者  通讯作者  56(31): 17478-17489, http://dx.doi.org/10.1007/s10853-021-06441-9.
[15] Pu, Yongjie, Liu, Wenqiang, Liu, Yunyong, Jiang, Qiwei, Li, Yinli, Zhao, Zuncheng, Yuan, Guodong, Zhang, Yang. Enhancing effects of reduced graphene oxide on photoluminescence of CsPbBr(3)perovskite quantum dots. JOURNAL OF MATERIALS CHEMISTRY C[J]. 2020, 第 7 作者  通讯作者  8(22): 7447-7453, https://www.webofscience.com/wos/woscc/full-record/WOS:000542764300017.
[16] Zhao, Shuai, Yuan, Guodong, Wang, Qi, Liu, Wenqiang, Wang, Ru, Yang, Shenghua. Quasi-hydrophilic black silicon photocathodes with inverted pyramid arrays for enhanced hydrogen generation. NANOSCALE[J]. 2020, 第 2 作者  通讯作者  12(1): 316-325, https://www.webofscience.com/wos/woscc/full-record/WOS:000504106900027.
[17] 向云青, 权菲菲, 温慧, 袁国栋, 崔菊, 黄术强. 基于仿生微流控技术的肠道器官芯片构建. 集成技术[J]. 2020, 第 4 作者9(3): 56-65, http://lib.cqvip.com/Qikan/Article/Detail?id=7102046489.
[18] Wang, Qi, Yuan, Guodong, Zhao, Shuai, Liu, Wenqiang, Liu, Zhiqiang, Wang, Junxi, Li, Jinmin. Metal-assisted photochemical etching of GaN nanowires: The role of metal distribution. ELECTROCHEMISTRY COMMUNICATIONS[J]. 2019, 第 2 作者  通讯作者  103: 66-71, http://dx.doi.org/10.1016/j.elecom.2019.05.005.
[19] Liu, Wenqiang, Yuan, Guodong, Zhang, Yang, Wang, Qi, Zhao, Shuai, Liu, Zhiqiang, Wei, Tongbo, Wang, Junxi, Li, Jinmin. Localized exciton emission in CsPbBr3 nanocrystals synthesized with excess bromide ions. JOURNAL OF MATERIALS CHEMISTRY C[J]. 2019, 第 2 作者  通讯作者  7(35): 10783-10788, http://dx.doi.org/10.1039/c9tc02511a.
[20] 田婷, 任芳, 梁萌, 王江华, 刘志强, 伊晓燕, 袁国栋, 王军喜, 李晋闽. 阵列式高压交直流LED芯片的隔离工艺. 照明工程学报[J]. 2019, 第 7 作者30(3): 81-85, http://lib.cqvip.com/Qikan/Article/Detail?id=7002322889.
[21] 王琦, 袁国栋, 刘文强, 赵帅, 张璐, 刘志强, 王军喜, 李晋闽. Monolithic semi-polar(11^-01)InGaN/GaN near white light-emitting diodes on micro-striped Si(100)substrate. 中国物理B:英文版[J]. 2019, 第 2 作者28(8): 349-354, http://lib.cqvip.com/Qikan/Article/Detail?id=7002765369.
[22] Wu, Shaoteng, Wang, Liancheng, Liu, Zhiqiang, Wang, Yunyu, Cheng, Cheng, Lin, Chen, Zhang, Shuo, Li, Tao, Wei, Tongbo, Yan, Jianchang, Yuan, Guodong, Wang, Junxi, Li, Jinmin. Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence. NANOTECHNOLOGY[J]. 2019, 第 11 作者30(4): 
[23] Zhao, Shuai, Yuan, Guodong, Wang, Qi, Liu, Wenqiang, Zhang, Shuo, Liu, Zhiqiang, Wang, Junxi, Li, Jinmin. Morphology control of c-Si via facile copper-assisted chemical etching: Managements on etch end-points. APPLIED SURFACE SCIENCE[J]. 2019, 第 2 作者  通讯作者  489: 776-785, https://www.webofscience.com/wos/woscc/full-record/WOS:000474530600083.
[24] Wang, Qi, Yuan, Guodong, Liu, Wenqiang, Zhao, Shuai, Liu, Zhiqiang, Chen, Yu, Wang, Junxi, Li, Jinmin. Semipolar (1101) InGaN/GaN red-amber-yellow light-emitting diodes on triangular-striped Si (100) substrate. JOURNAL OF MATERIALS SCIENCE[J]. 2019, 第 2 作者  通讯作者  54(10): 7780-7788, 
[25] QiWang, GuoDongYuan, WenQiangLiu, ShuaiZhao, LuZhang, ZhiQiangLiu, JunXiWang, JinMinLi. Monolithic semi-polar (1101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate. Chinese Physics B[J]. 2019, 第 2 作者28(8): 87802-087802, https://cpb.iphy.ac.cn/EN/10.1088/1674-1056/28/8/087802.
[26] Wang, Qi, Yuan, GuoDong, Liu, WenQiang, Zhao, Shuai, Zhang, Lu, Liu, ZhiQiang, Wang, JunXi, Li, JinMin. Monolithic semi-polar (1(1)over-bar01) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate. CHINESE PHYSICS B[J]. 2019, 第 2 作者  通讯作者  28(8): https://www.webofscience.com/wos/woscc/full-record/WOS:000481705700002.
[27] Chang, Hongliang, Chen, Zhaolong, Li, Weijiang, Yan, Jianchang, Hou, Rui, Yang, Shenyuan, Liu, Zhiqiang, Yuan, Guodong, Wang, Junxi, Li, Jinmin, Gao, Peng, Wei, Tongbo. Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate. APPLIED PHYSICS LETTERS[J]. 2019, 第 8 作者114(9): https://www.webofscience.com/wos/woscc/full-record/WOS:000460820600009.
[28] Zhang, Liang, Yan, Jianchang, Wu, Qingqing, Guo, Yanan, Yang, Chao, Wei, Tongbo, Liu, Zhiqiang, Yuan, Guodong, Wei, Xuecheng, Zhao, Lixia, Zhang, Yun, Li, Jinmin, Wang, Junxi. Improved crystalline quality of Al-rich n-AlGaN by regrowth on nanoporous template fabricated by electrochemical etching. JOURNAL OF NANOPHOTONICS[J]. 2018, 第 8 作者12(4): 
[29] 王洁, 校亮, 毕冬雪, 韦婧, 袁国栋. 风化煤改变黄河三角洲盐渍化土壤溶液组分的过程. 土壤学报[J]. 2018, 第 5 作者55(6): 1367-1376, http://pedologica.issas.ac.cn/trxb/article/abstract/trxb201801110032?st=article_issue.
[30] Wang, Qi, Yuan, Guodong, Wei, Tongbo, Liu, Zhiqiang, Liu, Wenqiang, Zhang, Lu, Wei, Xuecheng, Wang, Junxi, Li, Jinmin. Multicolored-light emission from InGaN/GaN multiple quantum wells grown by selective-area epitaxy on patterned Si(100) substrates. JOURNAL OF MATERIALS SCIENCE[J]. 2018, 第 2 作者  通讯作者  53(24): 16439-16446, 
[31] Ren, Fang, Yin, Yue, Wang, Yunyu, Liu, Zhiqiang, Liang, Meng, Ou, Haiyan, Ao, Jinping, Wei, Tongbo, Yan, Jianchang, Yuan, Guodong, Yi, Xiaoyan, Wang, Junxi, Li, Jinmin, Dasa, Dheeraj, Weman, Helge. Direct Growth of AlGaN Nanorod LEDs on Graphene-Covered Si. MATERIALS[J]. 2018, 第 10 作者  通讯作者  11(12): http://dx.doi.org/10.3390/ma11122372.
[32] Liu, Zhiqiang, Yi, Xiaoyan, Wang, Liancheng, Wei, Tongbo, Yuan, Guodong, Yan, Jianchang, Wang, Junxi, Li, Jinmin, Shi, Yi, Zhang, Yong. Impurity resonant state p-doping layer for high-efficiency nitride-based light-emitting diodes. SEMICONDUCTOR SCIENCE AND TECHNOLOGY[J]. 2018, 第 5 作者33(11): http://dx.doi.org/10.1088/1361-6641/aadc01.
[33] Yin, Yue, Ren, Fang, Wang, Yunyu, Liu, Zhiqiang, Ao, Jinping, Liang, Meng, Wei, Tongbo, Yuan, Guodong, Ou, Haiyan, Yan, Jianchang, Yi, Xiaoyan, Wang, Junxi, Li, Jinmin. Direct van derWaals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS2. MATERIALS[J]. 2018, 第 8 作者11(12): http://dx.doi.org/10.3390/ma11122464.
[34] Wu, Shaoteng, Wang, Liancheng, Liu, Zhiqiang, Yi, Xiaoyan, Huang, Yang, Yang, Chao, Wei, Tongbo, Yan, Jianchang, Yuan, Guodong, Wang, Junxi, Li, Jinmin. Ultrafast growth of horizontal GaN nanowires by HVPE through flipping the substrate. NANOSCALE[J]. 2018, 第 9 作者10(13): 5888-5896, 
[35] Huang, Peng, Yuan, Guodong, Wei, Tongbo, Li, Jinmin, Ashfold, Michael N R. Introducing carbon dots to moderate the blue emission from zinc vanadium oxide hydroxide hydrate nanoplates. RSC ADVANCES[J]. 2018, 第 2 作者8(37): 20686-20691, https://www.webofscience.com/wos/woscc/full-record/WOS:000434694300026.
[36] Wu, Shaoteng, Wang, Liancheng, Yi, Xiaoyan, Liu, Zhiqiang, Yan, Jianchang, Yuan, Guodong, Wei, Tongbo, Wang, Junxi, Li, Jinmin. Crystallographic orientation control and optical properties of GaN nanowires. RSC ADVANCES[J]. 2018, 第 6 作者8(4): 2181-2187, https://www.webofscience.com/wos/woscc/full-record/WOS:000422863900059.
[37] 袁国栋. Van der waals epitaxy of GaN-based light emitting diodes on wet transfered multilayer graphene film. JJAP. 2017, 第 1 作者
[38] 袁国栋. Effect of etching conditions on surface morphology of periodic inverted trapezoidal patterned Si (100) substrate. Optoelectronics Lett.. 2017, 第 1 作者  通讯作者  
[39] Ni, Shibing, Huang, Peng, Chao, Dongliang, Yuan, Guodong, Zhang, Lichun, Zhao, Fengzhou, Li, Jinmin. Amorphous GaN@Cu Freestanding Electrode for High-Performance Li-Ion Batteries. ADVANCED FUNCTIONAL MATERIALS[J]. 2017, 第 4 作者27(35): https://www.webofscience.com/wos/woscc/full-record/WOS:000411027300001.
[40] Wu, Shaoteng, Wang, Liancheng, Yi, Xiaoyan, Liu, Zhiqiang, Wei, Tongbo, Yuan, Guodong, Wang, Junxi, Li, Jinmin. Influence of lateral growth on the optical properties of GaN nanowires grown by hydride vapor phase epitaxy. JOURNAL OF APPLIED PHYSICS[J]. 2017, 第 6 作者122(20): https://www.webofscience.com/wos/woscc/full-record/WOS:000416830400006.
[41] Li, Yang, Zhao, Yun, Wei, Tongbo, Liu, Zhiqiang, Duan, Ruifei, Wang, Yunyu, Zhang, Xiang, Wu, QingQing, Yan, Jianchang, Yi, Xiaoyao, Yuan, Guodong, Wang, Junxi, Li, Jimin. Van der Waals epitaxy of GaN-based light-emitting diodes on wet-transferred multilayer graphene film. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2017, 第 11 作者56(8): http://dx.doi.org/10.7567/JJAP.56.085506.
[42] 袁国栋. Amorphous GaN@Cu freestanding electrode for high performance Li ion batteres. Adv. Funct. Mater.. 2017, 第 1 作者
[43] 袁国栋. Selective area growth of periodic nanopyramid light emitting diode arrays on GaN/sapphire templates patterned by multi exposure colloidal lighography. Nanotechnology. 2017, 第 1 作者
[44] Xiong, Zhuo, Wei, Tongbo, Zhang, Yonghui, Zhang, Xiang, Yang, Chao, Liu, Zhiqiang, Yuan, Guodong, Li, Jinmin, Wang, Junxi. Selective-area growth of periodic nanopyramid light-emitting diode arrays on GaN/sapphire templates patterned by multiple-exposure colloidal lithography. NANOTECHNOLOGY[J]. 2017, 第 7 作者28(11): https://www.webofscience.com/wos/woscc/full-record/WOS:000400812600003.
[45] Huang, Yang, Liu, Zhiqiang, Yi, Xiaoyan, Guo, Yao, Yuan, Guodong, Wang, Junxi, Wang, Guohong, Li, Jinmin. Investigation of Isoelectronic Doping in p-GaN Based on the Thermal Quenching of UVL Band. IEEE PHOTONICS JOURNAL[J]. 2016, 第 5 作者8(5): https://doaj.org/article/efe577ad5c2345b5af8bc419e57259cb.
[46] Liu, Zhiqiang, Yi, Xiaoyan, Yu, Zhiguo, Yuan, Guodong, Liu, Yang, Wang, Junxi, Li, Jinmin, Lu, Na, Ferguson, Ian, Zhang, Yong. Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides. SCIENTIFIC REPORTS[J]. 2016, 第 4 作者6: http://dx.doi.org/10.1038/srep19537.
[47] Liu, Zhiqiang, Fu, Binglei, Yi, Xiaoyan, Yuan, Guodong, Wang, Junxi, Li, Jinmin, Luna, Ferguson, Ian. Co-doping of magnesium with indium in nitrides: first principle calculation and experiment. RSC ADVANCES[J]. 2016, 第 4 作者6(6): 5111-5115, http://ir.semi.ac.cn/handle/172111/28097.
[48] Huang, Yang, Liu, Zhiqiang, Yi, Xiaoyan, Guo, Yao, Wu, Shaoteng, Yuan, Guodong, Wang, JunXi, Wang, Guohong, Li, Jinmin. Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes. AIP ADVANCES[J]. 2016, 第 6 作者6(4): http://ir.semi.ac.cn/handle/172111/28088.
[49] Hunag, Yang, Liu, Zhiqiang, Yi, Xiaoyan, Guo, Yao, Wu, Shaoteng, Yuan, Guodong, Wang, Junxi, Wang, Cuohong, Li, Jinmin. Carrier leakage effect on efficiency droop in InGaN/GaN light-emitting diodes. MODERN PHYSICS LETTERS B[J]. 2016, 第 6 作者30(20): http://ir.semi.ac.cn/handle/172111/28083.
[50] Liu, Zhiqiang, Huang, Yang, Yi, Xiaoyan, Fu, Binglei, Yuan, Guodong, Wang, Junxi, Li, Jinmin, Zhang, Yong. Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides. SCIENTIFIC REPORTS[J]. 2016, 第 5 作者6: http://dx.doi.org/10.1038/srep32033.
[51] Wang, L, Yuan, G D, Duan, R F, Huang, F, Wei, T B, Liu, Z Q, Wang, J X, Li, J M. Tunable bandgap in hybrid perovskite CH3NH3Pb(Br3-yXy) single crystals and photodetector applications. AIP ADVANCES[J]. 2016, 6(4): http://ir.semi.ac.cn/handle/172111/27960.
[52] Wu, R W, Yuan, G D, Wang, K C, Wei, T B, Liu, Z Q, Wang, G H, Wang, J X, Li, J M. Bilayer-metal assisted chemical etching of silicon microwire arrays for photovoltaic applications. AIP ADVANCES[J]. 2016, 6(2): http://ir.semi.ac.cn/handle/172111/28094.
[53] Zeng, Qing, Chen, Zhaolong, Zhao, Yun, Wei, Tongbo, Chen, Xiang, Zhang, Yun, Yuan, Guodong, Li, Jinmin. Graphene-assisted growth of high-quality AlN by metalorganic chemical vapor deposition. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2016, 第 7 作者55(8): https://www.webofscience.com/wos/woscc/full-record/WOS:000379698900025.
[54] Liu, Zhiqiang, Yi, Xiaoyan, Yu, Zhiguo, Yuan, Guodong, Liu, Yang, Wang, Junxi, Li, Jinmin, Lu, Na, Ferguson, Ian, Zhang, Yong. Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides (vol 6, 19537, 2016). SCIENTIFIC REPORTS. 2016, 第 4 作者6: http://dx.doi.org/10.1038/srep23950.
[55] Wang, K C, Yuan, G D, Wu, R W, Lu, H X, Liu, Z Q, Wei, T B, Wang, J X, Li, J M, Zhang, W J. GaN nanowire arrays by a patterned metal-assisted chemical etching. JOURNAL OF CRYSTAL GROWTH[J]. 2016, 440: 96-101, http://dx.doi.org/10.1016/j.jcrysgro.2016.01.017.
[56] Fu, Binglei, Cheng, Yan, Si, Zhao, Wei, Tongbo, Zeng, Xionghui, Yuan, Guodong, Liu, Zhiqiang, Lu, Hongxi, Yi, Xiaoyan, Li, Jinmin, Wang, Junxi. Phosphor-free InGaN micro-pyramid white light emitting diodes with multilayer graphene electrode. RSC ADVANCES[J]. 2015, 第 6 作者5(122): 100646-100650, http://ir.semi.ac.cn/handle/172111/27010.
[57] Shan, Liang, Wei, Tongbo, Sun, Yuanping, Zhang, Yonghui, Zhen, Aigong, Xiong, Zhuo, Wei, Yang, Yuan, Guodong, Wang, Junxi, Li, Jinmin. Super-aligned carbon nanotubes patterned sapphire substrate to improve quantum efficiency of InGaN/GaN light-emitting diodes. OPTICS EXPRESS[J]. 2015, 第 8 作者23(15): A957-A965, http://ir.semi.ac.cn/handle/172111/27009.
[58] Hong, M, Yuan, G D, Peng, Y, Chen, H Y, Zhang, Y, Liu, Z Q, Wang, J X, Cai, B, Zhu, Y M, Chen, Y, Liu, J H, Li, J M. Control carrier recombination of multi-scale textured black silicon surface for high performance solar cells. APPLIED PHYSICS LETTERS[J]. 2014, 104(25): http://ir.semi.ac.cn/handle/172111/26297.
[59] Chen, H Y, Yuan, G D, Peng, Y, Hong, M, Zhang, Y B, Zhang, Y, Liu, Z Q, Wang, J X, Cai, Bin, Zhu, Y M, Li, J M. Enhanced performance of solar cells with optimized surface recombination and efficient photon capturing via anisotropic-etching of black silicon. APPLIED PHYSICS LETTERS[J]. 2014, 104(19): http://ir.semi.ac.cn/handle/172111/26298.
[60] Wang, Liancheng, Ma, Jun, Liu, Zhiqiang, Yi, Xiaoyan, Yuan, Guodong, Wang, Guohong. N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array. JOURNAL OF APPLIED PHYSICS[J]. 2013, 第 5 作者114(13): http://ir.semi.ac.cn/handle/172111/24760.
[61] 袁国栋. Nitride-based micro-scale hexagonal pyramids array vertical light emitting diodes by N-polar wet etching. OPTICSEXPRESS. 2013, 第 1 作者
[62] Ma, Jun, Wang, Liancheng, Liu, Zhiqiang, Yuan, Guodong, Ji, Xiaoli, Ma, Ping, Wang, Junxi, Yi, Xiaoyan, Wang, Guohong, Li, Jinmin. Hexagonal pyramids shaped GaN light emitting diodes array by N-polar wet etching. MATERIALSRESEARCHSOCIETYSYMPOSIUMPROCEEDINGS[J]. 2013, 第 4 作者1538: 353-359, http://ir.semi.ac.cn/handle/172111/26077.
[63] Ma, Jun, Wang, Liancheng, Liu, Zhiqiang, Yuan, Guodong, Ji, Xiaoli, Ma, Ping, Wang, Junxi, Yi, Xiaoyan, Wang, Guohong, Li, Jinmin. Nitride-based micron-scale hexagonal pyramids array vertical light emitting diodes by N-polar wet etching. OPTICS EXPRESS[J]. 2013, 第 4 作者21(3): 3547-3556, http://dx.doi.org/10.1364/OE.21.003547.
[64] Wang, Liancheng, Liu, Zhiqiang, Zheng, Haiyang, Zhang, Yiyun, Cheng, Yan, Xie, Haizhong, Rao, Liqiang, Wei, Tongbo, Yang, Hua, Yuan, Guodong, Yi, Xiaoyan, Wang, Guohong. Mechanisms in thermal stress aided electroless etching of GaN grown on sapphire and approaches to vertical devices. RSC ADVANCES[J]. 2013, 第 10 作者3(27): 10934-10943, https://www.webofscience.com/wos/woscc/full-record/WOS:000320467500049.
[65] Yuan, Guodong, Mitdank, Ruediger, Mogilatenko, Anna, Fischer, Saskia F. Porous Nanostructures and Thermoelectric Power Measurement of Electro-Less Etched Black Silicon. JOURNAL OF PHYSICAL CHEMISTRY C[J]. 2012, 第 1 作者  通讯作者  116(25): 13767-13773, https://www.webofscience.com/wos/woscc/full-record/WOS:000305769900037.
[66] He, Haiping, Lin, Shisheng, Yuan, Guodong, Zhang, Liqiang, Zhang, Wenfeng, Luo, Linbao, Cao, Yulin, Ye, Zhizhen, Lee, Shuit Tong. Single-Crystalline Sodium-Doped p-Type ZnO and ZnMgO Nanowires via Combination of Thin-Film and Nano Techniques. JOURNAL OF PHYSICAL CHEMISTRY C[J]. 2011, 第 3 作者115(39): 19018-19022, https://www.webofscience.com/wos/woscc/full-record/WOS:000295245500013.
[67] Yuan, G D, Ng, T W, Zhou, Y B, Wang, F, Zhang, W J, Tang, Y B, Wang, H B, Luo, L B, Wang, P F, Bello, I, Lee, C S, Lee, S T. p-type conductivity in silicon nanowires induced by heterojunction interface charge transfer. APPLIED PHYSICS LETTERS[J]. 2010, 97(15): https://www.webofscience.com/wos/woscc/full-record/WOS:000283216900077.
[68] He, Zhubing, Zhang, Wenjun, Zhang, Wenfeng, Jie, Jiansheng, Luo, Linbao, Yuan, Guodong, Wang, Jianxiong, Wu, C M L, Bello, Igor, Lee, ChunSing, Lee, ShuitTong. High-Performance CdSe:In Nanowire Field-Effect Transistors Based on Top-Gate Configuration with High-k Non-Oxide Dielectrics. JOURNAL OF PHYSICAL CHEMISTRY C[J]. 2010, 第 6 作者114(10): 4663-4668, https://www.webofscience.com/wos/woscc/full-record/WOS:000275328700058.
[69] Yuan, G D, Zhou, Y B, Guo, C S, Zhang, W J, Tang, Y B, Li, Y Q, Chen, Z H, He, Z B, Zhang, X J, Wang, P F, Bello, I, Zhang, R Q, Lee, C S, Lee, S T. Tunable Electrical Properties of Silicon Nanowires via Surface-Ambient Chemistry. ACS NANO[J]. 2010, 4(6): 3045-3052, https://www.webofscience.com/wos/woscc/full-record/WOS:000278888600012.
[70] Tang, YongBing, Lee, ChunSing, Xu, Jun, Liu, ZengTao, Chen, ZhenHua, He, Zhubing, Cao, YuLin, Yuan, Guodong, Song, Haisheng, Chen, Limiao, Luo, Linbao, Cheng, HuiMing, Zhang, WenJun, Bello, Igor, Lee, ShuitTong. Incorporation of Graphenes in Nanostructured TiO2 Films via Molecular Grafting for Dye-Sensitized Solar Cell Application. ACS NANO[J]. 2010, 第 8 作者4(6): 3482-3488, http://www.irgrid.ac.cn/handle/1471x/410568.
[71] Tang, Y B, Lee, C S, Chen, Z H, Yuan, G D, Kang, Z H, Luo, L B, Song, H S, Liu, Y, He, Z B, Zhang, W J, Elello, I, Lee, S T. High-Quality Graphenes via a Facile Quenching Method for Field-Effect Transistors. NANO LETTERS[J]. 2009, 9(4): 1374-1377, https://www.webofscience.com/wos/woscc/full-record/WOS:000265030000017.
[72] Yuan, G D, Zhang, W J, Yang, Y, Tang, Y B, Li, Y Q, Wang, J X, Meng, X M, He, Z B, Wu, C M L, Bello, I, Lee, C S, Lee, S T. Graphene sheets via microwave chemical vapor deposition. CHEMICAL PHYSICS LETTERS[J]. 2009, 467(4-6): 361-364, http://dx.doi.org/10.1016/j.cplett.2008.11.059.
[73] Yuan, Guodong, Ye, Zhizhen, Qian, Qing, Zhu, Liping, Huang, Jingyun, Zhao, Binghui. p-Type ZnO thin films fabricated by Al-N co-doping method at different substrate temperature (Retraction of vol 273, pg 451, 2005). JOURNAL OF CRYSTAL GROWTH. 2009, 第 1 作者  通讯作者  311(14): 3812-3812, https://www.webofscience.com/wos/woscc/full-record/WOS:000268652400050.
[74] Luo, Linbao, Jie, Jiansheng, Zhang, Wenfeng, He, Zhubing, Wang, Jianxiong, Yuan, Guodong, Zhang, Wenjun, Wu, Lawrence Chi Man, Lee, ShuitTong. Silicon nanowire sensors for Hg2+ and Cd2+ ions. APPLIED PHYSICS LETTERS[J]. 2009, 第 6 作者94(19): https://www.webofscience.com/wos/woscc/full-record/WOS:000266263400050.
[75] Chen, Z H, Tang, Y B, Liu, C P, Leung, Y H, Yuan, G D, Chen, L M, Wang, Y Q, Bello, I, Zapien, J A, Zhang, W J, Lee, C S, Lee, S T. Vertically Aligned ZnO Nanorod Arrays Sentisized with Gold Nanoparticles for Schottky Barrier Photovoltaic Cells. JOURNAL OF PHYSICAL CHEMISTRY C[J]. 2009, 113(30): 13433-13437, https://www.webofscience.com/wos/woscc/full-record/WOS:000268233800074.
[76] Song, H S, Zhang, W J, Yuan, G D, He, Z B, Zhang, W F, Tang, Y B, Luo, L B, Lee, C S, Bello, I, Lee, S T. p-type conduction in arsenic-doped ZnSe nanowires. APPLIED PHYSICS LETTERS[J]. 2009, 95(3): https://www.webofscience.com/wos/woscc/full-record/WOS:000268405300068.
[77] Guo, ChunSheng, Luo, LinBao, Yuan, GuoDong, Yang, XiaoBao, Zhang, RuiQin, Zhang, WenJun, Lee, ShuitTong. Surface Passivation and Transfer Doping of Silicon Nanowires. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION[J]. 2009, 第 3 作者48(52): 9896-9900, 
[78] Zhang, W F, He, Z B, Yuan, G D, Jie, J S, Luo, L B, Zhang, X J, Chen, Z H, Lee, C S, Zhang, W J, Lee, S T. High-performance, fully transparent, and flexible zinc-doped indium oxide nanowire transistors. APPLIED PHYSICS LETTERS[J]. 2009, 94(12): http://dx.doi.org/10.1063/1.3100194.
[79] Chen, Z H, Tang, Y B, Liu, Y, Yuan, G D, Zhang, W F, Zapien, J A, Bello, I, Zhang, W J, Lee, C S, Lee, S T. ZnO nanowire arrays grown on Al:ZnO buffer layers and their enhanced electron field emission. JOURNAL OF APPLIED PHYSICS[J]. 2009, 106(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000270378100121.
[80] He, Zhubing, Jie, Jiansheng, Zhang, Wenjun, Zhang, Wenfeng, Luo, Linbao, Fan, Xia, Yuan, Guodong, Bello, Igor, Lee, ShuitTong. Tuning Electrical and Photoelectrical Properties of CdSe Nanowires via Indium Doping. SMALL[J]. 2009, 第 7 作者5(3): 345-350, http://dx.doi.org/10.1002/smll.200801006.
[81] Jie, Jiansheng, Zhang, Wenjun, Peng, Kuiqing, Yuan, Guodong, Lee, Chun Sing, Lee, ShuitTong. Surface-Dominated Transport Properties of Silicon Nanowires. ADVANCED FUNCTIONAL MATERIALS[J]. 2008, 第 4 作者18(20): 3251-3257, https://www.webofscience.com/wos/woscc/full-record/WOS:000260707300017.
[82] Zhang, Wenfeng, Jie, Jiansheng, Luo, Linbao, Yuan, Guodong, He, Zhubing, Yao, Zhiqiang, Chen, Zhenhua, Lee, ChunSing, Zhang, Wenjun, Lee, ShuitTong. Hysteresis in In2O3:Zn nanowire field-effect transistor and its application as a nonvolatile memory device. APPLIED PHYSICS LETTERS[J]. 2008, 第 4 作者93(18): https://www.webofscience.com/wos/woscc/full-record/WOS:000260778100070.
[83] Yuan, GuoDong, Zhang, WenJun, Jie, JianSheng, Fan, Xia, Tang, JianXin, Shafiq, Ismathullakhan, Ye, ZhiZhen, Lee, ChunSing, Lee, ShuitTong. Tunable n-type conductivity and transport properties of Ga-doped ZnO nanowire arrays. ADVANCED MATERIALS[J]. 2008, 第 1 作者20(1): 168-+, https://www.webofscience.com/wos/woscc/full-record/WOS:000252866800030.
[84] Zhang, Xiujuan, Yuan, Guodong, Li, Quansong, Wang, Bo, Zhang, Xiaohong, Zhang, Ruiqin, Chang, Jack C, Lee, Chunsing, Lee, Shuittong. Single-Crystal 9,10-Diphenylanthracene Nanoribbons and Nanorods. CHEMISTRY OF MATERIALS[J]. 2008, 第 2 作者20(22): 6945-6950, https://www.webofscience.com/wos/woscc/full-record/WOS:000261002200009.
[85] Zhang, Wenfeng, Jie, Jiansheng, Luo, Linbao, Yuan, Guodong, He, Zhubing, Yao, Zhiqiang, Chen, Zhenhua, Lee, ChunSing, Zhang, Wenjun, Lee, ShuitTong. Hysteresis in In 2 O 3 :Zn nanowire field-effect transistor and its application as a nonvolatile memory device. APPLIED PHYSICS LETTERS[J]. 2008, 第 4 作者93(18): http://dx.doi.org/10.1063/1.2995985.
[86] Yuan, G D, Zhang, W J, Jie, J S, Fan, X, Zapien, J A, Leung, Y H, Luo, L B, Wang, P F, Lee, C S, Lee, S T. p-type ZnO nanowire arrays. NANO LETTERS[J]. 2008, 8(8): 2591-2597, https://www.webofscience.com/wos/woscc/full-record/WOS:000258440700084.
[87] Yuan, G D, Zhang, W J, Zhang, W F, Fan, X, Bello, I, Lee, C S, Lee, S T. p-type conduction in nitrogen-doped ZnS nanoribbons. APPLIED PHYSICS LETTERS[J]. 2008, 93(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000261212800034.
[88] Zhang, Wenfeng, Jie, Jiansheng, He, Zhubing, Tao, Silu, Fan, Xia, Zhou, Yechun, Yuan, Guodong, Luo, Linbao, Zhang, Wenjun, Lee, ChunSing, Lee, ShuitTong. Single zinc-doped indium oxide nanowire as driving transistor for organic light-emitting diode. APPLIED PHYSICS LETTERS[J]. 2008, 第 7 作者92(15): https://www.webofscience.com/wos/woscc/full-record/WOS:000255117100104.
[89] Xia, Xianhui, Ye, Zhizhen, Yuan, Guodong, Zhu, Liping, Zhao, Binghui. Rapid synthesis of novel flowerlike ZnO structures by thermolysis of zinc acetate. APPLIED SURFACE SCIENCE[J]. 2006, 第 3 作者253(2): 909-914, http://dx.doi.org/10.1016/j.apsusc.2006.01.028.

   

（ 1 ） 低成本多孔黑硅材料可控制备及其太阳能电池研究, 主持, 国家级, 2013-01--2015-12
（ 2 ） 中国科学院****：微纳结构硅材料太阳能电池研究, 主持, 部委级, 2012-05--2015-12
（ 3 ） 纳米线晶体管器件及其表/界面特性研究, 主持, 国家级, 2015-01--2017-12
（ 4 ） 面向与IC工艺兼容的Si（100）衬底高亮度3D发光器件研究, 主持, 国家级, 2015-01--2018-12
（ 5 ） 新型大功率GaN电子器件外延材料及芯片制备技术研究, 主持, 国家级, 2015-01--2017-12
（ 6 ） 固态紫外光源系统集成技术与应用产品开发示范, 主持, 国家级, 2016-07--2021-06
（ 7 ） 硅基能带调控与高效发光机理, 参与, 部委级, 2019-01--2024-12

   

复旦大学，南开大学，中国科学院电工研究所，苏州大学，浙江大学，德国柏林洪堡大学，德国波鸿鲁尔大学，香港城市大学，苏州大学

已指导学生

吴瑞伟  硕士研究生  080903-微电子学与固体电子学  

王克超  硕士研究生  080903-微电子学与固体电子学  

张璐  硕士研究生  080903-微电子学与固体电子学  

现指导学生

王琦  博士研究生  080903-微电子学与固体电子学  

刘文强  博士研究生  080903-微电子学与固体电子学  

任芳  博士研究生  080903-微电子学与固体电子学  

张迪  硕士研究生  080903-微电子学与固体电子学  

赵帅  博士研究生  080903-微电子学与固体电子学