基本信息

顾溢  男  博导  中国科学院上海技术物理研究所
电子邮件: guyi@mail.sitp.ac.cn
通信地址: 上海市玉田路500号
邮政编码:

研究领域

化合物半导体材料、器件与应用

教育背景

2004-09--2009-06   中国科学院上海微系统与信息技术研究所   博士
2000-09--2004-08   南京大学   学士

工作经历

   
工作简历
2018-09~现在, 中国科学院上海技术物理研究所, 研究员
2018-01~2018-09,中国科学院上海微系统与信息技术研究所, 研究员
2015-09~2016-02,英国谢菲尔德大学, 访问学者
2012-02~2012-04,瑞典查尔姆斯理工大学, 访问学者
2012-01~2017-12,中国科学院上海微系统与信息技术研究所, 副研究员
2009-06~2011-12,中国科学院上海微系统与信息技术研究所, 助理研究员

专利与奖励

   
奖励信息
(1) 上海市技术发明奖, 三等奖, 省级, 2015
(2) 上海市科技进步二等奖, 二等奖, 省级, 2012
专利成果
( 1 ) 用于雪崩光电二极管的能带递变倍增区结构, 发明, 2013, 第 1 作者, 专利号: ZL201010290302.9
( 2 ) InP基截止波长大范围可调的晶格匹配InGaAsBi探测器结构及其制备, 发明, 2013, 第 1 作者, 专利号: 2013102644206
( 3 ) 基于免等离子工艺降低暗电流的光电探测器芯片制作方法 , 发明, 2013, 第 2 作者, 专利号: 2013100133032
( 4 ) 利用电子阻挡层降低暗电流的InGaAs探测器及制备, 发明, 2013, 第 1 作者, 专利号: 2013100133988
( 5 ) 一种GaAs衬底上扩展波长InGaAs探测器结构, 发明, 2013, 第 2 作者, 专利号: 2013100053803
( 6 ) 一种降低InP基InGaAs异变材料表面粗糙度的方法, 发明, 2013, 第 1 作者, 专利号: 2013100054261
( 7 ) 一种脉冲激光器驱动装置, 发明, 2013, 第 2 作者, 专利号: ZL201210071836.1
( 8 ) 一种微型宽脉冲范围双波长光感基因刺激装置, 发明, 2013, 第 2 作者, 专利号: ZL201110118258.8
( 9 ) 一种可获得极宽短波红外发光谱的半导体材料及其制备方法, 发明, 2014, 第 4 作者, 专利号: 2014100521723
( 10 ) GaAs衬底上实现1.3微米附近发光的量子阱结构及其制备方法, 发明, 2013, 第 2 作者, 专利号: 2013102644899
( 11 ) 一种提高热稳定性的稀铋半导体量子阱结构及其制备方法, 发明, 2013, 第 2 作者, 专利号: 2013102644761
( 12 ) 一种提高稀铋半导体材料热稳定性的方法, 发明, 2013, 第 2 作者, 专利号: 2013102644865
( 13 ) 基于铋元素的非矩形III-V族半导体量子阱的制备方法, 发明, 2013, 第 2 作者, 专利号: 2013102644723
( 14 ) 一种亚微米尺寸二维介质柱型光子晶体的制备方法, 发明, 2013, 第 4 作者, 专利号: ZL201110198078.5
( 15 ) 用于拓展In0.53Ga0.47As探测器及其阵列短波响应的材料体系及其制备, 发明, 2013, 第 1 作者, 专利号: ZL201010292223.1
( 16 ) 一种用于高In组分InGaAs探测器的突变弛豫缓冲层, 发明, 2014, 第 2 作者, 专利号: 201410728282.7
( 17 ) 一种提高异质材料界面质量的分子束外延生长方法, 发明, 2014, 第 1 作者, 专利号: 201410246865.6
( 18 ) 一种InP基中红外InAsBi量子阱结构, 发明, 2014, 第 1 作者, 专利号: 201410247131.X
( 19 ) 一种波长扩展型InGaAs雪崩光电二极管的外延结构, 发明, 2014, 第 3 作者, 专利号: 201410729324.9
( 20 ) 一种结合带间和价带子带间吸收的稀铋量子阱探测器及制备方法, 发明, 2015, 第 1 作者, 专利号: 201510867591.7
( 21 ) 一种提高稀铋半导体材料热稳定性的方法, 发明, 2016, 第 2 作者, 专利号: ZL2013102644865
( 22 ) 利用电子阻挡层降低暗电流的InGaAs探测器及制备, 发明, 2015, 第 1 作者, 专利号: ZL2013100133988
( 23 ) 基于免等离子工艺降低暗电流的光电探测器芯片制作方法, 发明, 2015, 第 2 作者, 专利号: ZL2013100133032
( 24 ) 一种降低InP基InGaAs异变材料表面粗糙度的方法, 发明, 2016, 第 1 作者, 专利号: ZL2013100054261
( 25 ) 一种组分递变过渡层的气态源分子束外延材料生长方法, 发明, 2015, 第 3 作者, 专利号: 201510952593.6
( 26 ) 一种用于实现InGaAs光吸收波长扩展的材料结构, 发明, 2015, 第 3 作者, 专利号: 201510947270.8
( 27 ) 一种啁啾数字递变结构的低缺陷异变缓冲层, 发明, 2016, 第 2 作者, 专利号: 201611153882.0
( 28 ) 一种采用低维量子点倍增层的半导体雪崩光电探测器, 发明, 2016, 第 3 作者, 专利号: 20160847176.X
( 29 ) 一种Si(001)衬底上高In组分InGaAs探测器及其制备方法, 发明, 2016, 第 1 作者, 专利号: 201611065587.X
( 30 ) 一种组分递变过渡层的气态源分子束外延材料生长方法, 发明, 2017, 第 3 作者, 专利号: ZL201510952593.6
( 31 ) 一种用于实现InGaAs光吸收波长扩展的材料结构, 发明, 2017, 第 3 作者, 专利号: ZL201510947270.8
( 32 ) 一种结合带间和价带子带间吸收的稀铋量子阱探测器及制备方法, 发明, 2017, 第 1 作者, 专利号: ZL201510867591.7
( 33 ) 一种提高异质材料界面质量的分子束外延生长方法, 发明, 2017, 第 1 作者, 专利号: ZL201410246865.6
( 34 ) 一种啁啾数字递变结构的低缺陷异变缓冲层, 发明, 2018, 第 2 作者, 专利号: ZL201611153882.0
( 35 ) 一种Si(001)衬底上高In组分InGaAs探测器及其制备方法, 发明, 2018, 第 1 作者, 专利号: ZL201611065587.X
( 36 ) 一种分子束外延中标定衬底表面实际温度的方法, 发明, 2018, 第 1 作者, 专利号: ZL201610172703.1

出版信息

   
发表论文
(1) Optimization of In0.6Ga0.4As/InAs electron barrier for In0.74Ga0.26As detectors grown by molecular beam epitaxy, Journal of Crystal Growth, 2019, 通讯作者
(2) Mid-infrared type-I InAs/In0.83Al0.17As quantum wells grown on GaP and InP by gas source molecular beam epitaxy, Journal of Crystal Growth, 2019, 通讯作者
(3) Growth mechanisms for InAs/GaAs QDs with and without Bi surfactants, Materials Research Express, 2019, 通讯作者
(4) Monolithically grown 2.5 μmInGaAs photodetector structures on GaP and GaP/Si (001) substrates, Materials Research Express, 2019, 通讯作者
(5) Frequency response of barrier type 2.6 μm In0.83Ga0.17As/In0.83Al0.17As photodetectors on InP, Physica Status Solidi A, 2019, 通讯作者
(6) Anomalous arsenic diffusion at InGaAs/InP interface, Materials Research Express, 2019, 通讯作者
(7) 3 μm InAs quantum well lasers at room temperature on InP, Applied Physics Letters, 2019, 通讯作者
(8) Mid-infrared emissions from In(Ga)As quantum wells grown on GaP/Si(001) substrates, AIP Advances, 2019, 通讯作者
(9) Improved performance of high indium InGaAs photodetectors with InAlAs barrier, Japanese Journal of Applied Physics, 2018, 通讯作者
(10) Composition uniformity characterization and improvement of AlGaAs/GaAs grown by molecular beam epitaxy, Materials Science in Semiconductor Processing, 2018, 通讯作者
(11) Wavelength extended InGaAsBi detectors with temperature-insensitive response wavelength’, Chinese Physics Letters, 2018, 第 2 作者
(12) Improved performance of In0.83Ga0.17As/InP photodetectors through modifying the position of In0.66Ga0.34As/InAs superlattice electron barrier, Infrared Physics and Technology, 2018, 第 4 作者
(13) Optimization of growth temperatures for InAlAs metamorphic buffers and high indium InGaAs on InP substrate, Journal of Infrared and Millimeter Waves, 2018, 通讯作者
(14) Short-wave infrared InGaAs photodetectors and focal plane arrays, Chinese Physics B, 2018, 第 2 作者
(15) Correction of FTIR acquired photodetector response spectra from mid-infrared to visible bands using onsite measured instrument function, Infrared Physics and Technology, 2018, 第 4 作者
(16) Growth temperature optimization of GaAs-based In0.83Ga0.17As on InxAl1-xAs buffers, Journal of Crystal Growth, 2018, 第 2 作者
(17) In0.83Ga0.17As photodetectors with different doping concentrations in the absorption layers, Infrared Physics and Technology, 2018, 第 2 作者
(18) IGA-rule 17 for performance estimation of wavelength extending InGaAs photodetectors: validity and limitations, Applied Optics, 2018, 第 2 作者
(19) Electron-initiated low noise 1064 nm InGaAsP/InAlAs avalanche photodetectors, Optics Express, 2018, 第 3 作者
(20) 2.25-μm Avalanche Photodiodes Using Metamorphic Absorber and Lattice-Matched Multiplier on InP, Photonics Technology Letters, 2017, 第 3 作者
(21) Analysis of dark currents and deep level traps in InP- and GaAs-based In0.83Ga0.17As photodetectors, Journal of Crystal Growth, 2017, 第 2 作者
(22) Metamorphic InAs quantum well lasers on InP substrates with different well shapes and waveguides, Journal of Crystal Growth, 2017, 第 1 作者
(23) Enhanced Carrier Multiplication in InAs Quantum Dots for Bulk Avalanche Photodetector Applications, Advanced Optical Materials, 2017, 第 3 作者
(24) An effective indicator for evaluation of wavelength extending InGaAs photodetector technologies, Infrared Physics & Technology, 2017, 第 2 作者
(25) Anisotropic strain relaxation of Si-doped metamorphic InAlAs graded buffers on InP, Journal of Physics D: Applied Physics, 2017, 第 1 作者
(26) InP-based pseudomorphic InAs/InGaAs triangular quantum well lasers with bismuth surfactant, Applied Optics, 2017, 通讯作者
(27) An effective indicator for evaluation of wavelength extending InGaAs photodetector technologies, Infrared Physics & Technology, 2017, 第 2 作者
(28) Metamorphic InAs1-xBix/In0.83Al0.17As quantum well structures on InP for mid-infrared emission, Applied Physics Letters, 2016, 第 1 作者
(29) Impact of etching on the surface leakage generation in mesa-type InGaAs/InAlAs avalanche photodetectors, Optics Express, 2016, 第 3 作者
(30) InGaAsP/InP photodetectors targeting on 1.06 μm wavelength detection, Infrared Physics & Technology, 2016, 第 2 作者
(31) Effects of continuously or step-continuously graded buffer on the performance of wavelength extended InGaAs photodetectors, Journal of Crystal Growth, 2016, 第 2 作者
(32) Nearly lattice-matched short-wave infrared InGaAsBi detectors on InP, Applied Physics Letters, 2016, 第 1 作者
(33) Correction of intensity of emission spectra in a wide wave number range measured by FTIR, Journal of Infrared Millimeter and Waves, 2016, 第 4 作者
(34) InP-based type-I quantum well lasers up to 2.9 μm at 230 K in pulsed mode on a metamorphic buffer, Applied Physics Letters, 2015, 第 1 作者
(35) Carrier scattering and relaxation dynamics in n-type In0.83Ga0.17As as a function of temperature and doping density, J. Mater. Chem. C , 2015, 第 2 作者
(36) Low voltage and small gain slope InAlAs/InGaAs avalanche photodiodes with a moderate p-doped multiplication layer”, , Photonics Technology Letters , 2015, 第 3 作者
(37) Dark current suppression in metamorphic In0.83Ga0.17As photodetectors with In0.66Ga0.34As/InAs superlattice electron barrier, Applied Physics Express, 2015, 第 1 作者
(38) Effects of material parameters on the temperature dependent spectral response of In0.83Ga0.17As photodetectors, Journal of Alloys and Compounds, 2015, 第 3 作者
(39) Effect of bismuth surfactant on InP-based highly strained InAs/InGaAs triangular quantum wells, Applied Physics Letters, 2015, 第 1 作者
(40) Effects of well widths and well numbers on InP-based triangular quantum well lasers beyond 2.4 µm, Journal of Crystal Growth, 2015, 第 1 作者
(41) Tailoring the performances of low operating voltage InAlAs/InGaAs avalanche photodetectors, Optics Express, 2015, 第 3 作者
(42) Optimization of InAlAs buffers for growth of GaAs-based high indium content InGaAs photodetectors, Journal of Crystal Growth, 2015, 第 2 作者
(43) Effects of continuously graded or step-graded InxAl1-xAs buffer on the performance of InP-based In0.83Ga0.17As photodetectors, Journal of Crystal Growth, 2015, 第 2 作者
(44) Correction of response spectra of quantum type photodetectors measured by FTIR, Journal of Infrared Millimeter and Waves, 2015, 第 3 作者
(45) InPBi Single Crystals Grown by Molecular Beam Epitaxy, Scientific Reports, 2014, 第 2 作者
(46) GaAs-based In0.83Ga0.17As photodetector structure grown by gas source molecular beam epitaxy, Journal of Crystal Growth, 2014, 第 3 作者
(47) 2.4-μm InP-based antimony-free triangular quantum well lasers in continuous-wave operation above room temperature, Applied Physics Express, 2014, 第 1 作者
(48) Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy, Nanoscale Research Letters, 2014, 第 1 作者
(49) High performance InP-based InAs triangular quantum well lasers operating beyond 2 μm, Proc. of SPIE, 2014, 第 1 作者
(50) Fabrication of column shape two dimensional photonic crystals by holographic lithography using double development, J. Infrared Millim. Waves, 2014, 第 4 作者
(51) Improved performance of 2.2 μm InAs/InGaAs QW lasers on InP by using triangular wells, IEEE Photonics Technology Letters, 2014, 第 3 作者
(52) Performance correlated defects evaluation of metamorphic InGaAs photodetector structures through plane-view EBIC, Semiconductor Science and Technology, 2014, 第 3 作者
(53) Dark current characteristics of GaAs-based 2.6 μm InGaAs photodetectors on different types of InAlAs buffer layers, Journal of Physics D: Applied Physics, 2014, 第 4 作者
(54) Type-I mid-infrared InAs/InGaAs quantum well lasers on InP-based metamorphic InAlAs buffers, Journal of Physics D: Applied Physics, 2013, 第 1 作者
(55) Effects of compositional overshoot on InP-based InAlAs metamorphic graded buffer, J. Infrared Millim. Waves, 2013, 第 2 作者
(56) InP-based InxGa1-xAs metamorphic buffers with different mismatch grading rates, Chinese Journal of Semiconductors, 2013, 第 2 作者
(57) Absorption coefficients of In0.8Ga0.2As at room temperature and 77 K, Journal of Alloys and Compounds, 2013, 第 3 作者
(58) 2.7 μm InAs quantum well lasers on InP-based InAlAs metamorphic buffer layers, Applied Physics Letters, 2013, 第 3 作者
(59) InAs/In0.83Al0.17As quantum wells on GaAs substrate with type-I emission at 2.9 μm, Applied Physics Letters, 2013, 第 1 作者
(60) Analysis and evaluation of uniformity of SWIR InGaAs FPA-Part II: processing issues and overall effects, Infrared Physics and Technology, 2013, 第 3 作者
(61) Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs photodetectors, Journal of Crystal Growth, 2013, 第 1 作者
(62) Performance of gas source MBE grown InAlGaAs photovoltaic detectors tailored to 1.4 um, Journal of Crystal Growth, 2013, 第 2 作者
(63) The effect of the injector doping density on lasing properties of InAlAs-InGaAs-InP quantum cascade lasers at 4.3 um, Journal of Crystal Growth, 2013, 第 3 作者
(64) High quality strain‐compensated multiple InAs/AlGaNAs quantum dot layers grown by MBE, Physica Status Solidi (c), 2013, 第 4 作者
(65) Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature‐dependent photoluminescence, Chinese Physics B, 2013, 第 1 作者
发表著作
(1) 气态源分子束外延生长的波长扩展InGaAs探测器, Gas Source MBE Grown Wavelength Extending InGaAs Photodetectors, Intech, 2011-11, 第 2 作者
(2) 特殊波长应用的Al(Ga)InP-GaAs探测器, Al(Ga)InP-GaAs photodiodes tailored for specific wavelength range, Intech, 2012-09, 第 2 作者
(3) 应用于中红外的稀铋材料, Dilute Bismides for Mid-IR Applications, Springer, 2013-09, 第 2 作者
(4) InP-based antimony-free MQW lasers in 2-3 µm band, Intech, 2015-07, 第 1 作者
(5) 《半导体光谱测试方法与技术》——半导体科学与技术丛书, 科学出版社, 2016-01, 第 2 作者
(6) “Epitaxy and device properties of InGaAs photodetectors with relatively high lattice mismatch” Chapter in “Epitaxy”, Intech, 2017-11, 第 2 作者