1. Characteristics of secondary ions and their impact on single-event upset in TMD devices under proton irradiation, NIMB, 2024, 第1/通讯作者

2. Exploring the Impact of Shrinking Feature Sizes on Proton-Induced Saturation SEU Cross-Section through Simulation，MICROELECTRONICS RELIABILITY, 2023, 第1/通讯作者

3. Investigation of radiation response for III-V binary compound semiconductors due to protons using Geant4, NIMB, 2022, 第1/通讯作者

4. Differences in MBUs induced by high-energy and medium-energy heavy ions in 28 nm FPGAs, NUCL SCI TECH, 2022, 通讯作者

5. Effect of Temperature on the Heavy Ion Induced Single Event Transient on 16 nm FinFET Inverter Chains, CHINESE PHYSICS B, 2022, 通讯作者

6. Neutron-induced single event upset simulation in Geant4 for three-dimensional die-stacked SRAM, CHINESE PHYSICS B, 2021, 通讯作者

7. Impact of heavy ion energy and species on single-event upset in commercial floating gate cells, MICROELECTRONICS RELIABILITY, 2021, 第1/通讯作者

8. Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device, CHINESE PHYSICS B, 2020, 第1/通讯作者

9. Influence of Orbital Parameters on SEU Rate of Low-Energy Proton in Nano-SRAM Device, SYMMETRY-BASEL, 2020, 第1/通讯作者

10. Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell, CHINESE PHYSICS B, 2017, 第 1 作者

11. Low energy proton induced single event upset in 65nm DDR and QDR commercial SRAMs, NIMB, 2017, 第1/通讯作者

12. Mechanisms of alpha particle induced soft errors in nanoscale static random access memories, ACTA PHYSICA SINICA, 2020, 第 2 作者

13. Heavy-ion induced radiation effects in 50 nm NAND floating gate flash memories, MICROELECTRONICS RELIABILITY, 2019, 第 4 作者

14. Heavy-ion and pulsed-laser single event effects in 130nm CMOS based thin/thick gate oxide anti-fuse PROMs, NST, 2019, 第 9 作者

15. Annealing behavior study on floating gate errors induced byγfollowed by heavy ion irradiation, 核技术, 2019, 第 6 作者

16. Effects of total ionizing dose on single event effect sensitivity of FRAMs, MICROELECTRONICS RELIABILITY, 2019, 第 5 作者

17. Impact of Total Ionizing Dose on Single Event Upset Sensitivity of Nano-SRAMs Devices, 原子核物理评论, 2019, 第 5 作者

18. Influences of total ionizing dose on single event effect sensitivity in floating gate cells, CHINESE PHYSICS B, 2018, 第 6 作者

19. Investigation of flux dependent sensitivity on single event effect in memory devices, CHINESE PHYSICS B, 2018, 第 10 作者

20. Heavy Ion Radiation Effects on a 130-nm COTS NVSRAM Under Different Measurement Conditions, IEEE TNS, 2018, 第 6 作者

21. Anomalous annealing of floating gate errors due to heavy ion irradiation, NIMB, 2018, 第 6 作者

22. Influences of total ionizing dose on single event effect sensitivity in floating gate cells, 中国物理B：英文版, 2018, 第 6 作者

23. Radiation-Induced "Fake MBU" by Heavy Ion in 65 nm SRAM with ECC, 原子核物理评论, 2018, 第 5 作者

24. Application of SEU imaging for analysis of device architecture using a 25 MeV/u 86Kr ion microbeam at HIRFL, NIMB, 2017, 第11作者

25. A comparison of heavy ion induced single event upset susceptibility in unhardened 6T/SRAM and hardened ADE/SRAM, NIMB, 2017, 第 8 作者

26. Influence of heavy ion flux on single event effect testing in memory devices, NIMB, 2017, 第 8 作者

27. Prediction of proton-induced SEE error rates for the VATA160 ASIC, NUCLEAR SCIENCE AND TECHNIQUES, 2017, 第 9 作者

28. Monte Carlo predictions of proton SEE cross-sections from heavy ion test data, CHINESE PHYSICS C, 2016, 第 9 作者

29. Impact of Heavy-ion Nuclear Reactions on Single Event Upset, Nuclear Physics Review, 2015, 第 7 作者

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