General
Wenquan Ma, professor, Institute of Semiconductors, Chines Academy of Sciences
Email:  wqma@semi.ac.cn
Telephone: 010-82304089 
Mobile phone:
Address: Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road A35, Beijing 100083, China.
Postcode:  100083

Research Areas

semiconductor materials and devices

Education

PhD from Humboldt University, Berlin Germany;
MSc from Institute of Semiconductors, Chinese Academy of Sciences;
BSc from Lanzhou University.

Publications

   
Papers
Recent publications(* denotes the corresponding author):
1,Y.H. Zhang, W.Q. Ma*, Y.L. Cao, J.L. Huang, Y. Wei, K. Cui and J. Shao, “Long wavelength infrared InAs/GaSb superlattice photodetectors with InSb-like and mixed interfaxes”, IEEE J. Quantum Electron. 47, 1475 (2011).
2,K. Cui, W.Q. Ma*, Y.H. Zhang, J.L. Huang, Y. Wei, Y.L. Cao, Z. Jin and L.F. Bian, “Forward bias voltage controlled infrared photodetection and electroluminescence from a p-i-n quantum dot structure”, Appl. Phys. Lett. 99, 023502 (2011).
3,Y. Wei, W.Q. Ma*, J.L. Huang, Y.H. Zhang, ,Y.H. Huo, K. Cui and L.H. Chen, “Very long wavelength quantum dot infarerd photodetector using a modified dots-in-a-well structure with AlgaAs insertion layers”, Appl. Phys. Lett. 98, 103507 (2011).
4,J.L. Huang, W.Q. Ma*, Y. Wei, Y.H. Zhang, ,Y.H. Huo, K. Cui and L.H. Chen, “Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetctor with double tunneling barriers”, Appl. Phys. Lett. 98, 103501 (2011).
5, Y.H. Huo, W.Q. Ma*, Y.H. Zhang, L.H. Chen and Y.L. Shi, “Quantum well infrared photodetector simultaneously working in two atomospheric windows”, Appl. Phys. A 100, 415 (2010).
6, E.B. Flagg, A. Muller, J.W. Robertson, S. Founta, D.G. Deppe, M. Xiao, W. Ma, G.J. Salamo, and C.K. Shih, “Resonantly driven coherent oscillations in a solid state quantum emitter”, Nature Physics, 5, 203 (2009).
7, E.B. Flagg, J.W. Robertson, S. Founta, W.Q. Ma, M. Xiao, G.J. Salamo, and C.K. Shih, “Direct evidence of interlevel exciton transitions mediated by single phonons in a semiconductor quantum dot using resonant fluorescence spectroscopy”, Phys. Rev. Lett., 102, 097402 (2009).
8, W.Q. Ma*, X.J. Yang, M. Chong, T. Yang, L.H. Chen, J. Shao, X. Lü, W. Lu, C.Y. Song, and H.C. Liu, “Voltage tunable two-color InAs/GaAs quantum dot infrared photodetector”, Appl. Phys. Lett. 93, 013502 (2008).
9, A. Muller, E.B. Flagg, P. Bianucci, X.Y. Wang, D.G. Deppe, W. Ma, J. Zhang, G.J. Salamo, M. Xiao, and C.K. Shih, “Resonance fluorescence from a coherently driven semiconductor quantum dot in a cavity”, Phys. Rev. Lett., 99, 187403 (2007).

Research Interests

quantum dot infrared photodetector, type II InAs/Sb superlattice infrared photodetector, growth and mechanism of low dimensional semiconductor nanostructures, molecular beam epitaxy

Students

已指导学生

刘小宇  硕士研究生  080903-微电子学与固体电子学  

张艳华  博士研究生  080901-物理电子学  

黄建亮  博士研究生  080903-微电子学与固体电子学  

卫炀  博士研究生  080903-微电子学与固体电子学  

郭晓璐  硕士研究生  080903-微电子学与固体电子学  

崔凯  博士研究生  080903-微电子学与固体电子学  

李琼  硕士研究生  080903-微电子学与固体电子学  

刘珂  博士研究生  080903-微电子学与固体电子学  

现指导学生

黄文军  博士研究生  080901-物理电子学  

聂碧颖  硕士研究生  080903-微电子学与固体电子学  

赵成城  博士研究生  080903-微电子学与固体电子学