半导体材料物理与器件物理

   

080901-物理电子学
080903-微电子学与固体电子学

锑化物二类超晶格及量子点红外探测器
光电子材料与器件
锑化物激光器

1998-03--2001-03   德国洪堡大学   博士
1994-09--1997-07   中科院半导体所   硕士
1986-09--1990-07   兰州大学   学士

博士

理学博士

2001年4月-2004年10月：美国阿肯色大学博士后
2004年10月至今：中科院半导体所研究员

2004-10~现在, 中科院半导体所, 研究员
2001-05~2004-09,美国阿肯色大学, 博士后

半导体光电材料与器件
半导体低维结构红外探测器
红外光电子材料物理

   

[1] 吴静, 陈涌海, 曾晓琳, 赵成城, 黄建亮, 张艳华, 马文全. 圆偏振光探测方法、装置、电子设备及存储介质. CN: CN116659671A, 2023-08-29.
[2] 张艳华, 马文全, 黄建亮. 反转型太赫兹光电探测器及其制备方法. CN: CN114649432B, 2023-02-17.
[3] 张艳华, 马文全, 黄建亮. 反转型太赫兹光电探测器及其制备方法. CN: CN114649432A, 2022-06-21.
[4] 聂碧颖, 马文全, 黄建亮, 张艳华. 自制冷型锑化物超晶格红外探测器及其制备方法. CN: CN111477717B, 2022-02-11.
[5] 黄建亮, 马文全. 中远红外雪崩光电探测器. CN: CN111540797A, 2020-08-14.
[6] 赵成城, 马文全, 黄建亮, 张艳华. 二类超晶格雪崩光电探测器及其制作方法. CN: CN110311000A, 2019-10-08.
[7] 黄建亮, 马文全, 张艳华. 一种抑制锑化物超晶格红外探测器表面泄露电流的方法. CN: CN106711289A, 2017-05-24.
[8] 李琼, 马文全, 张艳华, 黄建亮. 近零偏时半导体红外光电探测器表面暗电流的测量方法. CN: CN103954819A, 2014-07-30.
[9] 郭晓璐, 马文全, 张艳华. 一种在GaAs衬底上外延生长InAs/GaSb二类超晶格的方法. CN: CN103233271A, 2013-08-07.
[10] 崔凯, 马文全, 张艳华. 一种II型III-V族量子点材料的生长方法. CN: CN103225109A, 2013-07-31.
[11] 崔凯, 马文全, 张艳华. 一种制备基于量子点的空穴型存储器的方法. CN: CN103219291A, 2013-07-24.
[12] 黄建亮, 马文全, 张艳华, 曹玉莲. InAs/GaSb二类超晶格红外探测器. CN: CN102569484A, 2012-07-11.
[13] 曹玉莲, 马文全, 张艳华. 钝化InAs/GaSb二类超晶格红外探测器制作方法. CN: CN102569521A, 2012-07-11.
[14] 卫炀, 马文全, 张艳华, 曹玉莲. 甚长波InAs/GaSb二类超晶格红外探测器材料的制备方法. CN: CN102544229A, 2012-07-04.
[15] 张艳华, 马文全, 曹玉莲. Ⅱ类超晶格窄光谱红外光电探测器材料的外延生长方法. CN: CN102534764A, 2012-07-04.
[16] 霍永恒, 马文全, 种明, 张艳华, 陈良惠. 两端结构中长波同时响应量子阱红外探测器及其制作方法. CN: CN101866933A, 2010-10-20.
[17] 霍永恒, 马文全, 种明, 张艳华, 陈良惠. 电压调制型中长波双色量子阱红外探测器及其制作方法. CN: CN101866932A, 2010-10-20.
[18] 刘小宇, 马文全, 张艳华, 种明. 10-14微米同时响应的双色量子阱红外探测器及其制作方法. CN: CN101847672A, 2010-09-29.
[19] 杨晓杰, 马文全, 种 明, 苏艳梅, 陈良惠. 铟镓砷/铟铝砷耦合量子点红外探测器及其制备方法. CN: CN101207163A, 2008-06-25.

   

[1] 马文全. Long wavelength interband cascade photodetector with type II InAs/GaSb superlattice absorber. Journal of Semiconductors[J]. 2023, 44: 042301-1, [2] Huang, Jianliang, Yan, Shaolong, Xue, Ting, Zhang, Yanhua, Ma, Wenquan. Mid-Wavelength InAs/InAsSb Superlattice Photodetector With Background Limited Performance Temperature Higher Than 160 K. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2022, 69(8): 4392-4395, http://dx.doi.org/10.1109/TED.2022.3186648.
[3] S.L. Yan, J.L.Huang, Y.H. Zhang, W. Q. Ma. Mid wavelength type II InAs/GaSb superlattice avalanche photodiode with a separate AlAsSb multiplication layer. IEEE Electron Device Letters[J]. 2021, 42(11): 1634-1637, [4] Yan, Shaolong, Huang, Jianliang, Zhang, Yanhua, Ma, Wenquan. Mid Wavelength Type II InAs/GaSb Superlattice Avalanche Photodiode With AlAsSb Multiplication Layer. IEEE ELECTRON DEVICE LETTERS[J]. 2021, 42(11): 1634-1637, [5] Zhao, Chengcheng, Huang, Jianliang, Nie, Biying, Zhang, Jinchuan, Zhang, Yanhua, Ma, Wenquan. Multiphoton absorption in type-II InAs/GaSb superlattice structure. OPTICS LETTERS[J]. 2020, 45(1): 165-168, [6] Nie, Biying, Huang, Jianliang, Zhao, Chengcheng, Zhang, Yanhua, Ma, Wenquan. Long Wavelength Type II InAs/GaSb Superlattice Photodetector Using Resonant Tunneling Diode Structure. IEEE ELECTRON DEVICE LETTERS[J]. 2020, 41(1): 73-75, https://www.webofscience.com/wos/woscc/full-record/WOS:000507305400019.
[7] Huang, Jianliang, Zhao, Chengcheng, Nie, Biying, Xie, Shiyu, Kwan, Dominic C M, Meng, Xiao, Zhang, Yanhua, Huffaker, Diana L, Ma, Wenquan. High-performance mid-wavelength InAs avalanche photodiode using AlAs0.13Sb0.87 as the multiplication layer. PHOTONICS RESEARCH[J]. 2020, 8(5): 755-759, http://lib.cqvip.com/Qikan/Article/Detail?id=7102138381.
[8] Huang, Wenjun, Huang, Jianhang, Zhang, Yanhua, Zhao, Chengcheng, Nie, Biying, Cao, Yulian, Ma, Wenquan, IEEE. Short/mid-wave two-band type II InAs/GaSb superlattice infrared heterojunction phototransistor. 2019 COMPOUND SEMICONDUCTOR WEEK (CSW)null. 2019, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000539485600237.
[9] 黄建亮, 张艳华, 曹玉莲, 黄文军, 赵成城, 卫炀, 崔凯, 郭晓璐, 李琼, 刘珂, 马文全. 锑化物二类超晶格红外探测器. 航空兵器[J]. 2019, 26(2): 50-56, http://lib.cqvip.com/Qikan/Article/Detail?id=7002010485.
[10] Zhao, Chengcheng, Huang, Jianliang, Zhang, Yanhua, Huang, Wenjun, Nie, Biyin, Cao, Yulian, Ma, Wenquan. Monte Carlo simulation of avalanche noise characteristics of type II InAs/GaSb superlattice avalanche photodiodes. SOLID STATE COMMUNICATIONS[J]. 2019, 301: http://dx.doi.org/10.1016/j.ssc.2019.113699.
[11] Wenjun Huang, Jianliang Huang, Yanhua Zhang, Chengcheng Zhao, Biying Nie, Yulian Cao, Wenquan Ma. Short/Mid-Wave Two-Band Type-II Superlattice Infrared Heterojunction Phototransistor. IEEE PHOTONICS TECHNOLOGY LETTERS[J]. 2019, 31(2): 137-140, http://dx.doi.org/10.1109/LPT.2018.2884734.
[12] Nie, Biying, Huang, Jianliang, Zhao, Chengcheng, Huang, Wenjun, Zhang, Yanhua, Cao, Yulian, Ma, Wenquan. InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure. APPLIED PHYSICS LETTERS[J]. 2019, 114(5): [13] Huang, Wenjun, Huang, Jianliang, Zhang, Yanhua, Cao, Yulian, Zhao, Chengcheng, Nie, Biying, Guo, Xiaolu, Ma, Wenquan. Growth and Electron Mobility of Inverted InAs/GaSb Quantum Well. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY[J]. 2018, 18(11): 7532-7535, https://www.webofscience.com/wos/woscc/full-record/WOS:000443946600036.
[14] Huang Jianliang, Ma Wenquan, Zhang Yanhua, Cao Yulian, Huang Wenjun, Zhao Chengcheng. Two-Color niBin Type II Superlattice Infrared Photodetector With External Quantum Efficiency Larger Than 100%. IEEE ELECTRON DEVICE LETTERS[J]. 2017, [15] Huang, Jianliang, Ma, Wenquan, Zhang, Yanhua, Cao, Yulian, Huang, Wenjun, Zhao, Chengcheng. Two-Color niBin Type II Superlattice Infrared Photodetector With External Quantum Efficiency Larger Than 100%. IEEE ELECTRON DEVICE LETTERS[J]. 2017, 38(9): 1266-1269, http://ir.semi.ac.cn/handle/172111/28314.
[16] Huang, Wenjun, Ma, Wenquan, Huang, Jianliang, Zhang, Yanhua, Cao, Yulian, Zhao, Chengcheng, Guo, Xiaolu. Electron mobility of inverted InAs/GaSb quantum well structure. SOLID STATE COMMUNICATIONS[J]. 2017, 267: 29-32, http://dx.doi.org/10.1016/j.ssc.2017.09.007.
[17] Zhang, Yanhua, Ma, Wenquan, Huang, Jianliang, Cao, Yulian, Liu, Ke, Huang, Wenjun, Zhao, Chengcheng, Ji, Haiming, Yang, Tao. Pushing Detection Wavelength Toward 1 mu m by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers. IEEE ELECTRON DEVICE LETTERS[J]. 2016, 37(9): 1166-1169, https://www.webofscience.com/wos/woscc/full-record/WOS:000383099400023.
[18] Yanhua Zhang, Wenquan Ma, Jianliang Huang, Yulian Cao, Ke Liu, Wenjun Huang, Chengcheng Zhao, Haiming Ji, Tao Yang. Pushing Detection Wavelength Toward 1 μm by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers. IEEE ELECTRON DEVICE LETTERS[J]. 2016, 37(9): 1166 - 1169, http://ir.semi.ac.cn/handle/172111/27718.
[19] 马文全, 张艳华, 徐应强, 王琦. 兼容集成中的新型材料系探索与特殊超晶格结构研究年度报告. 科技创新导报[J]. 2016, 13(1): 176-176, http://lib.cqvip.com/Qikan/Article/Detail?id=669338463.
[20] Zhou, Xuchang, Li, Dongsheng, Huang, Jianliang, Zhang, Yanhua, Mu, Yingchun, Ma, Wenquan, Tie, Xiaoying, Zuo, Dafan. Mid-wavelength type II InAs/GaSb superlattice infrared focal plane arrays. INFRARED PHYSICS & TECHNOLOGY[J]. 2016, 78: 263-267, https://www.webofscience.com/wos/woscc/full-record/WOS:000386407200034.
[21] Liu Ke, Ma WenQuan, Huang JianLiang, Zhang YanHua, Cao YuLian, Huang WenJun, Zhao ChengCheng. Three-color InAs/GaAs quantum dot infrared photodetector with AlGaAs inserting layer. ACTA PHYSICA SINICA[J]. 2016, 65(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000380363900042.
[22] Huang, Jianliang, Ma, Wenquan, Zhang, Yanhua, Cao, Yulian, Liu, Ke, Huang, Wenjun, Lu, Shulong. Impact of band structure of Ohmic contact layers on the response feature of p-i-n very long wavelength type II InAs/GaSb superlattice photodetector. APPLIED PHYSICS LETTERS[J]. 2015, 106(26): http://ir.sinano.ac.cn/handle/332007/3350.
[23] Jianliang Huang, Wenquan Ma, Yanhua Zhang, Yulian Cao, Ke Liu, Wenjun Huang, Shulong Lu. Narrow-band Type II Superlattice Photodetector with Detection Wavelength Shorter than 2 um. IEEE PHOTONICS TECHNOLOGY LETTERS[J]. 2015, 27(21): 2276-2279, http://ir.semi.ac.cn/handle/172111/26791.
[24] Ke Liu, Wenquan Ma, Jianliang Huang, Yanhua Zhang, Yulian Cao, Wenjun Huang, Shuai Luo, Tao Yang. Longer than 1.9 μm photoluminescence emission from InAs quantum structure on GaAs (001) substrate. APPLIED PHYSICS LETTERS[J]. 2015, 107(4): 041103-, http://ir.semi.ac.cn/handle/172111/26789.
[25] Liu, Ke, Ma, Wenquan, Huang, Jianliang, Zhang, Yanhua, Cao, Yulian, Huang, Wenjun, Luo, Shuai, Yang, Tao. Longer than 1.9 mu m photoluminescence emission from InAs quantum structure on GaAs (001) substrate. APPLIED PHYSICS LETTERS[J]. 2015, 107(4): https://www.webofscience.com/wos/woscc/full-record/WOS:000358924200003.
[26] Huang, Jianliang, Ma, Wenquan, Zhang, Yanhua, Cao, Yulian, Liu, Ke, Huang, Wenjun, Lu, Shulong. Narrow-Band Type II Superlattice Photodetector With Detection Wavelength Shorter Than 2 mu m. IEEE PHOTONICS TECHNOLOGY LETTERS[J]. 2015, 27(21): 2276-2279, http://www.irgrid.ac.cn/handle/1471x/1043900.
[27] Huang, Jianliang, Ma, Wenquan, Zhang, Yanhua, Cao, Yulian, Liu, Ke, Huang, Wenjun, Luo, Shuai, Ji, Haiming, Yang, Tao. Experimental determination of band overlap in type II InAs/GaSb superlattice based on temperature dependent photoluminescence signal. SOLID STATE COMMUNICATIONS[J]. 2015, 224: 34-36, http://dx.doi.org/10.1016/j.ssc.2015.10.005.
[28] Li, Qiong, Ma, Wenquan, Zhang, Yanhua, Cui, Kai, Huang, Jianliang, Wei, Yang, Liu, Ke, Cao, Yulian, Wang, Weiying, Liu, Yali, Jin, Peng. Dark current mechanism of unpassivated mid wavelength type II InAs/GaSb superlattice infrared photodetector. CHINESE SCIENCE BULLETIN[J]. 2014, 59(28): 3696-3700, http://ir.semi.ac.cn/handle/172111/26130.
[29] Li, Yuan, Liu, Yu, Jiang, Chongyun, Zhu, Laipan, Qin, Xudong, Gao, Hansong, Ma, Wenquan, Guo, Xiaolu, Zhang, Yanhua, Chen, Yonghai. Observation of linear and quadratic magnetic field-dependence of magneto-photocurrents in InAs/GaSb superlattice. NANOSCALE RESEARCH LETTERS[J]. 2014, 9: http://ir.semi.ac.cn/handle/172111/26227.
[30] Huang, Jianliang, Ma, Wenquan, Wei, Yang, Zhang, Yanhua, Cui, Kai, Shao, Jun. Interface effect on structural and optical properties of type II InAs/GaSb superlattices. JOURNAL OF CRYSTAL GROWTH[J]. 2014, 407: 37-41, http://dx.doi.org/10.1016/j.jcrysgro.2014.08.020.
[31] 巩锋, 马文全, 谭振, 刘铭, 王亮, 张燕华, 邢伟荣. 锑基二类超晶格中波红外焦平面探测器技术. 激光与红外[J]. 2014, 44(3): 258-260, http://lib.cqvip.com/Qikan/Article/Detail?id=48929706.
[32] Yuan Li, Yu Liu, Chongyun Jiang, Laipan Zhu, Xudong Qin, Hansong Gao, Wenquan Ma, Xiaolu Guo, Yanhua Zhang, Yonghai Chen. Observation of linear and quadratic magnetic field-dependence of magneto-photocurrents in InAs. NANOSCALE RESEARCH LETTERS. 2014, 9(1): 279-279, http://dx.doi.org/10.1186/1556-276X-9-279.
[33] Cui, Kai, Ma, Wenquan, Zhang, Yanhua, Huang, Jianliang, Wei, Yang, Cao, Yulian, Guo, Xiaolu, Li, Qiong. 540-meV Hole Activation Energy for GaSb/GaAs Quantum Dot Memory Structure Using AlGaAs Barrier. IEEE ELECTRON DEVICE LETTERS[J]. 2013, 34(6): 759-761, http://ir.semi.ac.cn/handle/172111/24282.
[34] Huang, Yuyang, Li, Wen, Ma, Wenquan, Qin, Hua, Grahn, Holger T, Zhang, Yaohui. Spontaneous quasi-periodic current self-oscillations in a weakly coupled GaAs/(Al,Ga)As superlattice at room temperature. APPLIED PHYSICS LETTERS[J]. 2013, 102(24): http://ir.semi.ac.cn/handle/172111/24746.
[35] Guo, Xiaolu, Ma, Wenquan, Huang, Jianliang, Zhang, Yanhua, Wei, Yang, Cui, Kai, Cao, Yulian, Li, Qiong. Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy. SEMICONDUCTOR SCIENCE AND TECHNOLOGY[J]. 2013, 28(4): http://ir.semi.ac.cn/handle/172111/24745.
[36] Huang, Jianliang, Ma, Wenquan, Cao, Yulian, Wei, Yang, Zhang, Yanhua, Cui, Kai, Deng, Gongrong, Shi, Yanli. Mid Wavelength Type II InAs/GaSb Superlattice Photodetector Using SiOxNy Passivation. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2012, 51(7): http://ir.semi.ac.cn/handle/172111/23564.
[37] Huang YuYang, Li Wen, Ma WenQuan, Qin Hua, Zhang YaoHui. Experimental observation of spontaneous chaotic current oscillations in GaAs/Al0.45Ga0.55As superlattices at room temperature. CHINESE SCIENCE BULLETIN[J]. 2012, 57(17): 2070-2072, http://lib.cqvip.com/Qikan/Article/Detail?id=41967992.
[38] Huang, Jianliang, Ma, Wenquan, Wei, Yang, Zhang, Yanhua, Cui, Kai, Cao, Yulian, Guo, Xiaolu, Shao, Jun. How to Use Type II InAs/GaSb Superlattice Structure to Reach Detection Wavelength of 2-3 mu m. IEEE JOURNAL OF QUANTUM ELECTRONICS[J]. 2012, 48(10): 1322-1326, http://www.irgrid.ac.cn/handle/1471x/1789647.
[39] Cao, Yulian, Ji, Haiming, Xu, Pengfei, Gu, Yongxian, Ma, Wenquan, Yang, Tao. High-brightness 1.3 mu m InAs/GaAs quantum dot tapered laser with high temperature stability. OPTICS LETTERS[J]. 2012, 37(19): 4071-4073, http://ir.semi.ac.cn/handle/172111/23802.
[40] Cao, Yulian, Ji, Haiming, Xu, Pengfei, Gu, Yongxian, Ma, Wenquan, Yang, Tao. High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability. OPTICS LETTERS[J]. 2012, 37(19): 4071-4073, http://ir.semi.ac.cn/handle/172111/23873.
[41] Wei, Yang, Ma, Wenquan, Zhang, Yanhua, Huang, Jianliang, Cao, Yulian, Cui, Kai. High Structural Quality of Type II InAs/GaSb Superlattices for Very Long Wavelength Infrared Detection by Interface Control. IEEE JOURNAL OF QUANTUM ELECTRONICS[J]. 2012, 48(4): 512-515, http://www.irgrid.ac.cn/handle/1471x/622155.
[42] Zhang, Yanhua, Ma, Wenquan, Wei, Yang, Cao, Yulian, Huang, Jianliang, Cui, Kai, Guo, Xiaolu. Narrow-band long-/very-long wavelength two-color type-II InAs/GaSb superlattice photodetector by changing the bias polarity. APPLIED PHYSICS LETTERS[J]. 2012, 100(17): http://ir.semi.ac.cn/handle/172111/23695.
[43] Zhang, Yanhua, Ma, Wenquan, Wei, Yang, Cao, Yulian, Huang, Jianliang, Cui, Kai, Guo, Xiaolu. Narrow-band long-/very-long wavelength two-color type-II InAs/GaSb superlattice photodetector by changing the bias polarity. ZHANG, YANHUA1 ; MA, WENQUAN1 ; WEI, YANG1 ; CAO, YULIAN1 ; HUANG, JIANLIANG1 ; CUI, KAI1 ; GUO, XIAOLU1[J]. 2012, 100(17): 173511-, http://www.irgrid.ac.cn/handle/1471x/622154.
[44] 霍永恒, 马文全, 张艳华, 黄建亮, 卫炀, 崔凯, 陈良惠. 两端叠层结构的中长波量子阱红外探测器. 物理学报[J]. 2011, 60(9): 740-745, http://lib.cqvip.com/Qikan/Article/Detail?id=39067721.
[45] Xu, PengFei, Ji, HaiMing, Yang, Tao, Xu, Bo, Ma, WenQuan, Wang, Zhanguo. The Research Progress of Quantum Dot Lasers and Photodetectors in China. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY[J]. 2011, 11(11): 9345-9356, http://www.irgrid.ac.cn/handle/1471x/352599.
[46] Huo YongHeng, Ma WenQuan, Zhang YanHua, Huang JianLiang, Wei Yang, Cui Kai, Chen LiangHui. Dual-band quantum well infrared photodetectors with two ohmic contacts. ACTA PHYSICA SINICA[J]. 2011, 60(9): http://dx.doi.org/10.7498/aps.60.098401.
[47] Wei, Yang, Ma, Wenquan, Huang, Jianliang, Zhang, Yanhua, Huo, Yongheng, Cui, Kai, Chen, Lianghui, Shi, Yanli. Very long wavelength quantum dot infrared photodetector using a modified dots-in-a-well structure with AlGaAs insertion layers. APPLIED PHYSICS LETTERS[J]. 2011, 98(10): http://ir.semi.ac.cn/handle/172111/21349.
[48] Cui, Kai, Ma, Wenquan, Zhang, Yanhua, Huang, Jianliang, Wei, Yang, Cao, Yulian, Jin, Zhao, Bian, Lifeng. Forward bias voltage controlled infrared photodetection and electroluminescence from a p-i-n quantum dot structure. APPLIED PHYSICS LETTERS[J]. 2011, 99(2): http://www.irgrid.ac.cn/handle/1471x/1043877.
[49] Zhang, Yanhua, Ma, Wenquan, Cao, Yulian, Huang, Jianliang, Wei, Yang, Cui, Kai, Shao, Jun. Long Wavelength Infrared InAs/GaSb Superlattice Photodetectors with InSb-Like and Mixed Interfaces. IEEE JOURNAL OF QUANTUM ELECTRONICS[J]. 2011, 47(12): 1475-1479, http://ir.semi.ac.cn/handle/172111/22749.
[50] Huang, Jianliang, Ma, Wenquan, Wei, Yang, Zhang, Yanhua, Huo, Yongheng, Cui, Kai, Chen, Lianghui. Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriers. APPLIED PHYSICS LETTERS[J]. 2011, 98(10): http://ir.semi.ac.cn/handle/172111/21347.
[51] Gu Yongxian, Ma Wenquan, Wang Zhanguo, Ji Haiming, Yang Tao, Cao Yulian, Xu Pengfei. High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy. 中国物理快报：英文版[J]. 2010, 27(2): 027801-1, http://lib.cqvip.com/Qikan/Article/Detail?id=33011995.
[52] 刘小宇, 马文全, 张艳华, 霍永恒, 种明, 陈良惠. 10—14μm同时响应的双色量子阱红外探测器. 物理学报[J]. 2010, 5720-5723, http://lib.cqvip.com/Qikan/Article/Detail?id=34649702.
[53] 季海铭, 杨涛, 曹玉莲, 徐鹏飞, 谷永先, 马文全, 王占国. High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy. 中国物理快报：英文版[J]. 2010, 27(2): 285-287, http://lib.cqvip.com/Qikan/Article/Detail?id=33011995.
[54] Ji HaiMing, Yang Tao, Cao YuLian, Xu PengFei, Gu YongXian, Ma WenQuan, Wang ZhanGuo. High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy. CHINESE PHYSICS LETTERS[J]. 2010, 27(2): http://ir.semi.ac.cn/handle/172111/11160.
[55] Cao, YuLian, Yang, Tao, Xu, PengFei, Ji, HaiMing, Gu, YongXian, Wang, XiaoDong, Wang, Qing, Ma, WenQuan, Chen, LiangHui. Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating. APPLIED PHYSICS LETTERS[J]. 2010, 96(17): http://ir.semi.ac.cn/handle/172111/11244.
[56] Xu, PengFei, Yang, Tao, Ji, HaiMing, Cao, YuLian, Gu, YongXian, Liu, Yu, Ma, WenQuan, Wang, ZhanGuo. Temperature-dependent modulation characteristics for 1.3 mu m InAs/GaAs quantum dot lasers. JOURNAL OF APPLIED PHYSICS[J]. 2010, 107(1): http://ir.semi.ac.cn/handle/172111/11148.
[57] Huang JianLiang, Wei Yang, Ma WenQuan, Yang Tao, Chen LiangHui. On detection wavelength and electron-hole wave function overlap of type II InAs/In-x Ga1-x Sb superlattice infrared photodetector. ACTA PHYSICA SINICA[J]. 2010, 59(5): 3099-3106, http://dx.doi.org/10.7498/aps.59.3099.
[58] Ji HaiMing, Cao YuLian, Yang Tao, Ma WenQuan, Cao Qing, Chen LiangHui. Characteristic study of maximum modal gain of p-doped 1.3 mu m InAs/GaAs quantum dot lasers. ACTA PHYSICA SINICA[J]. 2009, 58(3): 1896-1900, http://dx.doi.org/10.7498/aps.58.1896.
[59] 季海铭, 曹玉莲, 杨涛, 马文全, 曹青, 陈良惠. p型掺杂1.3μm InAs/GaAs量子点激光器的最大模式增益特性的研究. 物理学报[J]. 2009, 1896-1900, http://lib.cqvip.com/Qikan/Article/Detail?id=29774619.
[60] 马文全, 杨晓杰, 种明, 苏艳梅, 杨涛, 陈良惠, 邵军, 吕翔. InGaAs/GaAs量子点红外探测器. 红外与激光工程[J]. 2008, 37(1): 34-36, http://lib.cqvip.com/Qikan/Article/Detail?id=26921189.
[61] Cao, Yulian, Yang, Tao, Ji, Haiming, Ma, Wenquan, Cao, Qing, Chen, Lianghui. Temperature Sensitivity Dependence on Cavity Length in p-Type Doped and Undoped 1.3-mu m InAs-GaAs Quantum-Dot Lasers. IEEE PHOTONICS TECHNOLOGY LETTERS[J]. 2008, 20(21-24): 1860-1862, http://dx.doi.org/10.1109/LPT.2008.2004778.
[62] 王青, 曹玉莲, 何国荣, 韦欣, 渠红伟, 宋国峰, 马文全, 陈良惠. 高密度排列大功率垂直腔面发射激光器列阵. 半导体学报[J]. 2007, 28(11): 1803-1806, http://lib.cqvip.com/Qikan/Article/Detail?id=25838040.
[63] 杨晓杰, 马文全, 陈良惠. In0．5Ga0．5As／In0．5Al0．5As应变耦合量子点的形貌和光学性质. 红外与激光工程[J]. 2007, 36(5): 705-707,714, http://lib.cqvip.com/Qikan/Article/Detail?id=25732171.
[64] Yang, XiaoJie, Wang, Qing, Ma, WenQuan, Chen, LiangHui. Calculation of energy levels in InGaAs/GaAs quantum dot array. ACTA PHYSICA SINICA[J]. 2007, 56(9): 5429-5435, http://dx.doi.org/10.7498/aps.56.5429.
[65] 杨晓杰, 王青, 马文全, 陈良惠. InGaAs/GaAs量子点阵列中的能级计算. 物理学报[J]. 2007, 56(9): 5429-5435, http://lib.cqvip.com/Qikan/Article/Detail?id=25323245.
[66] 种明, 苏艳梅, 张艳冰, 胡小燕, 马文全, 孙永伟, 陈良惠. 160×128元多量子阱长波红外焦平面探测器件研制. 红外与激光工程[J]. 2007, 36(5): 702-704, http://lib.cqvip.com/Qikan/Article/Detail?id=25732169.
[67] 杨晓杰, 马文全, 陈良惠. In_（0.5）Ga_（0.50As/In_（0.5）Al_（0.5）As应变耦合量子点的形貌和光学性质. 红外与激光工程[J]. 2007, 36(5): 705-707, http://ir.semi.ac.cn/handle/172111/16211.
[68] 种明, 马文全, 苏艳梅, 张艳冰, 胡小燕, 陈良惠. 双色量子阱红外探测器大面阵芯片的研制. 红外与激光工程[J]. 2007, 36(6): 782-784, http://lib.cqvip.com/Qikan/Article/Detail?id=26147871.
[69] 孙永伟, 马文全, 杨晓杰, 屈玉华, 侯识华, 江德生, 孙宝权, 陈良惠. 空间有序的量子点超晶格的红外吸收. 半导体学报[J]. 2005, 26(11): 2092-2096, http://lib.cqvip.com/Qikan/Article/Detail?id=20622822.
[70] 朱洪亮, 江德生, 王玉田, 马文全, 庄岩, 张静媛, 段俐宏, 王圩. Suructural investigation of InGaAs/InP quantum wire array using triple-axis X-ray diffractometry. 半导体学报[J]. 1998, 19(1): 61-, http://ir.semi.ac.cn/handle/172111/19213.
[71] 王玉田, 庄岩, 林耀望, 周增圻, 马文全. MBE InGaAs／GaAs外延层晶胞弛豫直接测量的X射线双晶衍射方法. 半导体学报[J]. 1997, 18(7): 508-512, http://lib.cqvip.com/Qikan/Article/Detail?id=2539526.

   

（ 1 ） 半导体异质兼容集成中的新型材料系探索与特殊超晶格结构, 主持, 国家级, 2010-01--2014-12
（ 2 ） 高性能长波长 InAs/GaSb二类超晶格材料基础研究, 主持, 国家级, 2012-01--2015-12
（ 3 ） 量子点红外探测器材料及器件物理研究, 主持, 国家级, 2015-01--2018-12
（ 4 ） XXX, 主持, 国家级, 2016-01--2018-12
（ 5 ） 低维固态极性结构中量子态调控及其原型器件研究, 参与, 国家级, 2018-01--2022-12

（1）Reaching detection wavelength of 1 μm by type II superlattice structure   Wenquan Ma, Jianliang Huang, Yanhua Zhang, and Yulian Cao   2017-07-31
（2）Short Wavelength Infrared Detection Using Type II InAs/GaSb superlattice structure   2017-05-14

已指导学生

刘小宇  硕士研究生  080903-微电子学与固体电子学  

张艳华  博士研究生  080901-物理电子学  

黄建亮  博士研究生  080903-微电子学与固体电子学  

卫炀  博士研究生  080903-微电子学与固体电子学  

郭晓璐  硕士研究生  080903-微电子学与固体电子学  

崔凯  博士研究生  080903-微电子学与固体电子学  

李琼  硕士研究生  080903-微电子学与固体电子学  

刘珂  博士研究生  080903-微电子学与固体电子学  

现指导学生

黄文军  博士研究生  080901-物理电子学  

聂碧颖  硕士研究生  080903-微电子学与固体电子学  

赵成城  博士研究生  080903-微电子学与固体电子学