基本信息
汪连山  男  博导  中国科学院半导体研究所
电子邮件: ls-wang@semi.ac.cn
通信地址: 北京市海淀区清华东路甲35号
邮政编码: 100083
部门/实验室:材料科学重点实验室

研究领域

   
半导体光电材料与器件
   

招生信息

   
招生专业
080501-材料物理与化学
080901-物理电子学
招生方向
宽带隙半导体材料与器件

教育背景

1995-09--1999-01   中国科学院半导体研究所   博士学位
1989-09--1992-08   中国科学院固体物理研究所   硕士学位
1982-09--1986-06   湖北大学物理系   学士学位
学历
博士研究生
学位
工学博士

工作经历

   
工作简历
2013-05~现在, 中国科学院半导体所半导体材料科学重点实验室, 研究员
2011-09~2013-04,中国科学院半导体研究所照明研发中心, 研究员
2006-10~2011-08,华中科技大学武汉光电国家实验室(筹), 教授
1999-10~2006-10,Institute of Materials Research and Engeering, Research Scientist
1998-08~1999-08,香港理工大学电子资讯工程系, 访问学者
1992-09~1995-08,武汉工业大学材料研究与测试中心, 助理研究员
1986-07~1989-08,武汉市新洲技工学校, 助理讲师
社会兼职
2013-07-01-今,《光学学报》论文评审人,
2012-01-01-今,IEEE Photonics Technology Letters论文评审人,
2012-01-01-今,ECS Journal of Solid-State Science and Technology论文评审人,
2010-01-01-今,ECS Solid State Letters论文评审人,
2007-10-01-今,广东省科技咨询专家, 项目评审专家
2005-06-01-今,Applied Physics Letters论文评审人,

教授课程

《半导体照明技术导论》
《半导体制造技术》
《半导体照明基础》

专利与奖励

   
奖励信息
   
专利成果
( 1 ) 面发射多色发光二极管, 实用新型, 2009, 第 1 作者, 专利号: ZL200820230327.8
( 2 ) 一种GaN基多量子阱结构的外延片压电场的测量系统, 实用新型, 2012, 第 1 作者, 专利号: 201220092553.0
( 3 ) 太阳能电池, 发明, 2011, 第 1 作者, 专利号: ZL201010168797.8
( 4 ) 一种LED防爆灯, 实用新型, 2013, 第 1 作者, 专利号: 201220105127.6
( 5 ) 面发射多色发光二极管及其制造方法, 发明, 2010, 第 1 作者, 专利号: ZL200810236865.2
( 6 ) 硅基单结氮化镓铟太阳能电池, 实用新型, 2011, 第 1 作者, 专利号: ZL201020184791.5
( 7 ) 纳米图案p型氮化物半导体欧姆接触电极及其制备方法, 发明, 2010, 第 1 作者, 专利号: ZL200810196819.4
( 8 ) 半极性面氮化镓基发光二极管及其制备方法, 发明, 2016, 第 2 作者, 专利号: 201410147977.6
( 9 ) 利用硅衬底制备垂直结构氮化镓基发光二极管器件的方法, 发明, 2016, 第 5 作者, 专利号: 201310652125.8

出版信息

   
发表论文
(1) Impact of Cone-Shape-Patterned Sapphire Substrate and Temperature on the Epitaxial Growth of p-GaN via MOCVD, Physica Status Solidi A216, 1900026-1-5 (2019), 2019, 通讯作者
(2) Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters, Physica Status Solidi, A215, 1800455-1-6 (2018), 2018, 通讯作者
(3) Measurement of semipolar (11-22) plane AlN/GaN Heterojunction Band Offsets by X-Ray Photoelectron Spectroscopy, Applied Physics A: Materials Science & Processing, 124, 130 (2018), 2018, 通讯作者
(4) Structural and Optical Properties of Semi-polar (11–22) InGaN/GaN Green Light-Emitting Diode Structure, Appl. Phys. Lett. 112, 052105 (2018), 2018, 通讯作者
(5) The Residual Stress and Al Incorporation of AlGaN Epilayers by Metalorganic Chemical Vapor Deposition, Journal of Nanoscience and Nanotechnology, 18, 7484 (2018), 2018, 通讯作者
(6) Comparative investigation of semiploar (11-22) GaN layers on m plane sapphire with different nucleation layers, Journal of Nanoscience and Nanotechnology,18,7446 (2018), 2018, 第 1 作者
(7) Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters, Phys. Status Solidi A, 2018 , 1800455, 2018, 通讯作者
(8) Anisotropically biaxial strain in non-polar (112–0) plane InxGa1−xN/GaN layers investigated by X-ray reciprocal space mapping, Scientific Reports, 7, 4497-(2017), 2017, 通讯作者
(9) Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer, Superlattices and Microstructures, 110C, 324-329 (2017), 2017, 通讯作者
(10) Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition, Chinese Physics B, 26, 078102 (2017)., 2017, 通讯作者
(11) Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers, Scientific Reports,66, 20787 (2016), 2016, 通讯作者
(12) The immiscibility of InAlN ternary alloy, Scientific Reports, 6, 26600 (2016), 2016, 通讯作者
(13) Morphology Controlled Fabrication of InN Nanowires on Brass Substrates, Nanomaterials, 6(11),195-1-14 (2016), 2016, 第 3 作者
(14) Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates, Nanoscale Research Letters 11(1), 270-1-7(2016), 2016, 第 4 作者
(15) the Effect of the thickness of InGaN interlayer on the a-plane GaN epilayers, Chin. Phys. B24(2), 02680 (2015), 2015, 通讯作者
(16) Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer, Chin. Phys. B”, 23, 026801(2014)., 2014, 第 3 作者
(17) Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in Al(In)GaN/GaN heterostructures, J. Appl. Phys. 115, 043702 (2014), 2014, 第 2 作者
(18) Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN/GaN high electron mobility transistors, Appl. Phys. Lett. 103, 232109 (2013)., 2013, 第 4 作者
(19) AlN:Si buffer layer on Si(111) substrate effect on GaN film, IEEE Proceedings of the fourth international Symposium on Photonics and Optoelectronics, P629-631, May 21-23, 2012, Shanghai, 2012, 第 2 作者
(20) Structure of interlayer on Si(111) substrate effect on GaN film, IEEE Proceedings of the fourth international Symposium on Photonics and Optoelectronics, P615-617, May 21-23, 2012, Shanghai, 2012, 第 2 作者
(21)  Optical Properties of InGaN Multiple Quantum Well Structures Grown on (112-2) Facet GaN/sapphire Templates, Taiwan Association for Coating and Thin Film Technology(TACT) 2011, International Thin Films Conference, Nov.20-23, 2011, Taiwan, 2011, 第 2 作者
(22) Structural and Optical Properties of InGaN/GaN Multiple Quantum Well Light Emitting Diodes Grown on (11-22) Facet GaN/sapphire Templates by Metalorganic Chemical Vapor Deposition, Proc. of SPIE Vol. 8123 81230C (2011), 2011, 第 2 作者
(23) InGaN multiple quantum well blue LED grown on patterned sapphire substrates, IEEE Proceedings of the 3rd international Symposium on Photonics and Optoelectronics, P729-731,May 16-18, 2011, Wuhan, 2011, 第 1 作者
(24) Influence of size of ZnO nanorods on light extraction enhancement of GaN-based light-emitting diodes, Chinese Appl. Phys. Lett., 28, 098501 (2011), 2011, 第 2 作者
(25) Shallow-deep InGaN multiple quantum well system for dual-wavelength emission grown on semi-polar (112-22) facet GaN, J. Electronic Materials 40, 1572 (2011), 2011, 第 1 作者
(26) Influence of the alignment of ZnO nanorod arrays on light extraction enhancement of GaN-based light-emitting diodes, J. Appl. Phys. 109,083110 (2011), 2011, 第 4 作者
(27) Epitaxial growth and characterization of two- and three-wavelengths InGaN multiple quantum well structures grown on semi-polar (11-22) facet GaN, The 16th International Conference on Crystal Growth, and the 14th International Conference on Vapor Growth and Epitaxy, 8-13 August, 2010, Beijing, China, 2010, 第 1 作者
(28) Effect of annealing temperature of zno seeds on the synthesis of Zno nanorod arrays on GaN/Al2O3 substrates, Proceedings of the ASME 2010 International Mechanical Engineering Congres and Exposition (IMECE2010), November 12-18, 2010, Vancouver, British Columbia, Canada, 2010, 第 1 作者
(29) Initial Growth of AlInGaN on Polar Gallium Nitride Substrates under Biaxial Strain: First-principle Simulations, International Journal of Nonlinear Sciences and Numerical Simulation 11(7), 545-549 (2010), 2010, 第 3 作者
(30) InGaN/GaN multi-quantum-well structures and GaN micromechanical structures on silicon-on-insulator substrates, Proc. SPIE Vol. 7279, 72790U (2009), 2009, 第 1 作者
(31) GaN and ZnO freestanding micromechanical structures on SOI substrates, Physica Status Solidi (a), 205,1168-1172 (2008), 2008, 第 3 作者
(32) Deep levels associated with dislocation annihilation by Al pre-seeding and silicon delta doping in GaN grown on Si (111) substrates, Physica Status Solidi (a), 205, 266 (2008), 2008, 第 3 作者
(33) Nanopatterning and selective area epitaxy of GaN on Si substrate, Proc. SPIE Vol. 6894-9, (2008), 2008, 第 1 作者
(34) Defect reduction by periodic SiNx interlayers in gallium nitride grown on Si (111), Journal of Applied Physics 101, 093502 (2007), 2007, 第 3 作者
(35) Nanoheteroepitaxy of GaN on a nanopore array of Si(111) surface, Thin Solid Films 515, 4505-4508 (2007) , 2007, 第 3 作者
(36) Characteristics of threading dislocations in ZnO grown on facet-controlled epitaxial overgrown GaN template, Journal of Physics: Condensed Matter 19, 356203 (2007), 2007, 通讯作者
(37) Fabrication of deeply undercut GaN-based microdisk structures on silicon platforms, Applied Physics Letters 90, 071906 (2007), 2007, 第 4 作者
(38) InGaN multiple quantum wells grown on ELO GaN templates and the optical properties characterization, Journal of Crystal Growth 298, 511 (2007) , 2007, 第 4 作者
(39) AlGaN/GaN multiple quantum wells grown on facet-controlled epitaxial lateral overgrown GaN/sapphire templates, Journal of Physics: Condensed Matter 19, 056005 (2007), 2007, 通讯作者
(40) Structural properties of ZnO Grown on GaN/sapphire templates: the transition from nanorods to thin films, Electrochemical and Solid-State Letters, 10(3), H98-H100 (2007), 2007, 通讯作者
(41) GaN epilayers on nanopatterned GaN/Si (111) templates: optical and structural characterization, Applied Surface Science 253, 214-218 (2006), 2006, 第 1 作者
(42) Characterization of GaN layers grown on silicon-on-insulator substrates, Applied Surface Science 253, 236-240 (2006), 2006, 第 2 作者
(43) Nanoscale epitaxial overgrowth process and properties of GaN layers on Si (111) substrates, Applied Physics Letters 89, 011901 (2006) , 2006, 第 1 作者
(44) Crack-free fully epitaxial nitride microcavity with AlGaN/GaN distributed Bragg reflectors and InGaN/GaN quantum wells, Applied Physics Letters 88, 191111 (2006), 2006, 第 4 作者
(45) Nanoheteroepitaxial lateral overgrowth of GaN on nanoporous Si (111), Applied Physics Letters 88, 141925 (2006), 2006, 第 4 作者
(46) Optical activation of Eu ions in nanoporous GaN films, Journal of Applied Physics 93, 104305 (2006), 2006, 第 3 作者
(47)  Control and improvement of crystalline cracking from GaN thin films grown on Si by metalorganic chemical vapour deposition, Thin Solid Films 498, 108 (2006), 2006, 第 4 作者
(48) Influence of rapid thermal annealing on the luminescence properties of nanoporous GaN films, Electrochemical and Solid-State Letters 9 (4), G150- G154 (2006), 2006, 通讯作者
(49) Nanoscale lateral epitaxial overgrowth of GaN on Si (111), Applied Physics Letters 87, 193106 (2005) , 2005, 通讯作者
(50) InGaN/GaN multi-quantum well structures on (111)-oriented bonded silicon-on-insulator substrates, Applied Physics Letters 87, 111908 (2005), 2005, 第 1 作者
(51) Fabrication of freestanding GaN micro-mechanical structures on silicon-on-insulator substrates, Electrochemical and Solid-State Letters 8 (10), G275-279 (2005), 2005, 第 3 作者
(52) Schottky diodes fabricated on cracked GaN epitaxial layer grown on (111) silicon, Physica Status Solidi (c), 2, 2559-2263 (2005), 2005, 第 3 作者
(53) High optical quality nanoporous GaN prepared by photoelectrochemical etching, Electrochemical and Solid-State Letters, 8 (4) G85-G88 (2005), 2005, 通讯作者
(54) Comparative investigation of MOCVD-grown GaN thin films on Si with and without periodic Si-delta dopings, 6th international conference on nitride semiconductors (ICNS-6) (Bremen, Germany) August 28 - September 2, 2005, 2005, 第 4 作者
(55) Effect of periodic silicon delta doping on the microstructural and optical properties of GaN films grown on Si (111) substrates, 11th European Workshop on MOVPE, June 5-8, 2005, Lausanne, Switzerland, P387-389 (H04), 2005, 第 1 作者
(56) Growth and characterization of GaN on silicon-on-insulator substrates, 11th European Workshop on MOVPE, June 5-8, 2005, Lausanne, Switzerland, 2005, 第 2 作者
(57) The effect of periodic silane burst on the properties of GaN on Si (111) substrates, Mat. Res. Soc. Symp. Proc. Vol. 831, E3.33.1 (2005), 2005, 第 4 作者
(58) Effects of periodic delta-doping on the properties of GaN:Si films grown on Si (111) substrates, Applied Physics Letters 85, 58 (2004), 2004, 第 1 作者
(59) Structural analysis of metalorganic chemical vapor deposited AIN nucleation layers on Si (1 1 1), Journal of Crystal Growth 268, 515–520 (2004), 2004, 第 2 作者
(60) Micro-Raman spectroscopy of Si-, C-, Mg and Be-implanted GaN layers, Journal of Raman Spectroscopy, 35, 73-77 (2004), 2004, 第 1 作者
(61) Growth of crack-free GaN on AlN quantum dots on Si (111) substrates by MOCVD, Mat. Res. Soc. Symp. Proc. Vol.798, Y10.36.1-6 (2004), 2004, 第 3 作者
(62) InGaN self-organized quantum dots grown by metalorganic chemical vapor deposition (MOCVD), Physica Status Solidi (c), Vol. 0, No. 7, 2082 (2003), 2003, 第 1 作者
(63) Evolution of AlN buffer layers on silicon and effects on the properties of epitaxial GaN films, Physica Status Solidi (c), Vol. 0, No. 7, 2067 (2003), 2003, 第 3 作者
(64) Properties of schottky contact of titanium on low doped p-type SiGeC alloy by rapid thermal annealing, Solid-State Electron. 47, 601 (2003), 2003, 第 4 作者
(65) Comparative investigation of photoluminescence of In- and Si- doped GaN/AlGaN multi-Quantum wells, Materials Science and Engineering B, 97(2), 196 (2003), 2003, 第 1 作者
(66)  Outgoing multiphonon resonant Raman scattering and luminescence in Be- and C- implanted GaN, Journal of Applied Physics 91, 4917 (2002) , 2002, 第 3 作者
(67) Micro-Raman scattering in laterally epitaxial overgrown GaN, Journal of Applied Physics 91, 5840 (2002), 2002, 通讯作者
(68) Raman scattering spectra in Be-implanted GaN epilayers, Mat. Res. Soc. Symp. Proc. Vol. 719, F6.28.1-4 (2002), 2002, 第 1 作者
(69) Comparative investigation of photoluminescence of In- and Si- doped GaN/AlGaN multi-quantum wells, Mat. Res. Soc. Symp. Proc. Vol. 719, F6.26.1-6 (2002), 2002, 第 2 作者
(70) Improvements of structural and optical properties of GaN/Al0.10Ga0.90N multi-quantum wells by isoelectronic In-dopin, Mat. Res. Soc. Symp. Proc. Vol. 693, I6.6.1-6 (2002), 2002, 第 1 作者
(71) Local vibration modes in gamma-irradiated GaN grown by metal-organic chemical vapour deposition, Materials Science in Semiconductor Processing, 4 (6), 559-562 (2001) , 2001, 第 2 作者
(72) Raman scattering and photoluminescence of implanted Mg GaN film, Physica Status Solidi (b), 228, 449 (2001), 2001, 第 1 作者
(73) Outgoing multiphonon resonant raman scattering in Be- and C-implanted GaN, Physica Status Solidi (b), 228, 341 (2001), 2001, 第 3 作者
(74) Electron-hole plasma emission from In0.3Ga0.7N/GaN multiple quantum wells, Physical Review B 63, 121308 (R) (2001), 2001, 通讯作者
(75) Photoluminescence of rapid –thermal annealed Mg-doped GaN films, Solid-State Electronics 45, 1153 (2001), 2001, 第 1 作者
(76) Raman scattering and photoluminescence of implanted Mg GaN film, The fourth international conference on nitride semiconductors (ICNS4), P11.2, Denver Colorado, USA, 17-19 July 2001, 2001, 第 1 作者
(77) Outgoing multiphonon resonant raman scattering in Be- and C-implanted GaN, The fourth international conference on nitride semiconductors (ICNS4), P11.1, Denver Colorado, USA, 17-19 July 2001, 2001, 第 3 作者
(78) Raman scattering spectra in C-implanted GaN epilayers, Mat. Res. Soc. Symp. Proc. Vol. 680, E9.8.1-6 (2001), 2001, 第 4 作者
(79) Ion channeling studies on mixed phases formed in metalorganic chemical vapor deposition grown Mg-doped GaN on Al2O3 (0001), Journal of Applied Physics 87, 955 (2000), 2000, 通讯作者
(80) Growth and characterisation of high quality GaN film by epitaxial lateral over-growth, Proceedings of the international workshop on advances in materials science and technology, P146, 3-6 April 2000, Singapore, 2000, 第 3 作者
(81) Photoluminescence of rapid-thermal annealed Mg-doped GaN films, Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1999, P154-157, 1999, 第 1 作者
(82)  n型氮化镓的持续光电导, 半导体学报》,第 20 卷, 371页, (1999年), 1999, 第 1 作者
(83) 氮化镓缓冲层的物理性质, 《半导体学报》,第 20 卷, 633页, (1999年), 1999, 第 2 作者
(84) 掺Si氮化镓材料的生长及其性质, 《半导体学报》,第 20 卷, 534页, (1999年), 1999, 第 2 作者
(85) 氮化镓缓冲层微观生长过程分析, 《材料科学与技术》,第 15 卷, 529-533 页, (1999年), 1999, 第 2 作者
(86) Wurtzite GaN epitaxial growth on a Si(001) substrate using gamma-Al2O3 as an intermediate layer, Applied Physics Letters 72, 109-111(1998), 1998, 第 1 作者
(87) The gtrowth and characterization of GaN grown on an Al2O3 coated (001) Si substrate by metalorganic vapor phase epitaxy (MOVPE), J. Crystal Growth 193, 484-490 (1998), 1998, 第 1 作者
(88)  The Influence of Thickness on Properties of GaN Buffer Layer and Heavily Si- Doped GaN Grown by Metalorganic Vapor Phase Epitaxy (MOVPE), J. Crystal Growth 189/190, 287-290 (1998) , 1998, 第 2 作者
(89) The Dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor phase epitaxy (MOVPE), J. Crystal Growth 193, 23-27 (1998), 1998, 第 3 作者
(90) Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD, Proceedings of 2nd international symposium on blue laser and light emitting diodes, P560, Kazusa Akademia Center, Chiba, Japan, 29 Sept. – 2 Oct. 1998, 1998, 第 1 作者
(91) The growth and characterization of GaN grown on a gamma-Al2O3/Si (001) substrate by MOVPE, Proceedings of 2nd international symposium on blue laser and light emitting diodes, p.93, Kazusa Akademia Center, Chiba, Japan, 29 Sept. – 2 Oct. 1998, 1998, 第 1 作者
(92) The role of GaN buffer layer for GaN epitaxy on sapphire , Proceedings of international topical meeting on III-V nitride materials and devices, (ITNMD 98), P.38, 17-22 Aug. 1998, Beijing, 1998, 第 2 作者
(93)  Analysis on the chemical reaction process of GaN buffer layer growth, Proceedings of international topical meeting on III-V nitride materials and devices, (ITNMD 98), P35, Aug 17-22 1998, Beijing, 1998, 第 3 作者
(94) 高纯GaN薄膜的生长, 《粉末冶金技术》第 16 卷, 35页 (1998年), 1998, 第 4 作者
(95) Fabrication of GaN on Al2O3/Si Substrate, Sciences in China (series E), Vol. 41, No. 2, 203, (1998), 1998, 第 1 作者
(96) Al2O3/Si(001)衬底上氮化镓外延薄膜的制备, 《中国科学》,(E,技术辑),第28 卷,第1 期,第32页,(1998年), 1998, 第 1 作者
(97) 高纯氮化镓外延材料的制备, 《高技术通讯》,第 8卷, 第8 期,35页, (1998年), 1998, 第 4 作者
(98) The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by MOVPE, The international conference on nitride semiconductors (ICNS 97), P 328, Japan, 2-7 Nov. 1997, 1997, 第 2 作者
(99) P型GaN的LP-MOVPE生长, 第五届全国MOCVD学术会议文集,第92页,河北承德,1997年8月, 1997, 通讯作者
(100)  缓冲层生长温度对MOVPE生长GaN的影响, 第五届全国MOCVD学术会议论文集,第34页,河北承德, 1997年8月, 1997, 第 2 作者
(101) MOVPE生长参数对氮化镓缓冲层生长速率的影响, 1997年砷化镓及有关化合物会议论文集,第98 页,湖南张家界,1997年11月, 1997, 第 2 作者
(102) GaN在gamma-Al2O3/Si(001)衬底上的外延生长, 1997年砷化镓及有关化合物会议论文集,第101页,湖南张家界,1997年11月, 1997, 第 1 作者
(103) Synthesis and ferroelctric properties of c-axis oriented Bi4Ti3O12 thin films by sol-gel process on platinum coated silicon, Appl. Phys. Lett. 68, 1209 (1996), 1996, 通讯作者
(104)  Microstructure and Transformation on Platinum (111) Facets, Rare Metals 15, 45 (1996), 1996, 第 1 作者
(105) 溶胶-凝胶法制备高取向 Bi4Ti3O12/SrTiO3 (100)薄膜, 《物理化学学报》,第 12卷, 第1 期,第63 页,(1996) , 1996, 通讯作者
(106) MOCVD法硅上外延生长gamma-Al2O3, 第五届全国固体薄膜会议文集 ,第248 页,浙江奉化 ,1996年10月, 1996, 通讯作者
(107)  GaAs (100) 解理面的反射电子显微术观察, 《科学通报》,第39卷, 第1271页 (1994), 1994, 第 1 作者
(108) Reflection Electron Microscopy Observation of Cleaved GaAs (110) surface, Chinese Science Bulletin, Vol. 39, 1598, (1994) , 1994, 第 1 作者
(109) Pt(111) 小面的反射电子显微分析方法, 《理化检验》(物理分册),第30 卷,第3 期,第36 页 (1994年), 1994, 第 1 作者
(110) 普通透射电镜的反射电子显微术, 分析测试技术与仪器,第1卷,第1 期, 第44页,(1992年), 1992, 第 1 作者
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科研活动

   
科研项目
( 1 ) 新一代移动通信基站氮化镓射频功率放大器, 主持, 国家级, 2015-01--2017-12
( 2 ) 面向可见光通信的宽带高效LED器件核心技术研究, 主持, 省级, 2015-01--2017-12
( 3 ) 硅衬底非/半极性GaN材料研究(南昌大学国家硅基LED工程技术研究中心开放课题), 主持, 研究所(学校), 2017-09--2019-08
( 4 ) 半极性GaN基黄橙光材料研究, 主持, 国家级, 2018-01--2021-12
( 5 ) 第三代半导体 核心关键设备:第三课题 “面向大尺寸AlN单晶的PVT和高温HVPE设备研制, 参与, 国家级, 2017-07--2020-12
( 6 ) 薄膜生长缺陷跨时空尺度原位/实时监测与调控实验装置, 参与, 国家级, 2018-01--2022-12
参与会议
   

科研项目合作

863项目合作单位:杭州士兰明芯科技有限公司;华南理工大学;西安电子科技大学

广东省战略新兴产业LED项目合作单位:广东量晶光电科技有限公司、东莞福地电子材料有限公司

广东省中国科学院全面战略合作项目单位:广东银雨芯片半导体有限公司

项目协作单位
   

指导学生

已指导学生

王建霞  博士研究生  080501-材料物理与化学  

金东东  博士研究生  080903-微电子学与固体电子学  

吉泽生  硕士研究生  085204-材料工程  

现指导学生

李方政  博士研究生  080501-材料物理与化学  

孟钰淋  博士研究生  080501-材料物理与化学  

文玲  硕士研究生  085204-材料工程