基本信息
孙钱 男 博导 苏州纳米技术与纳米仿生研究所
电子邮件:qsun2011@sinano.ac.cn
通信地址:江苏省苏州工业园区若水路398号
邮政编码:215123

研究领域

  • 高效蓝绿光、及紫外LED与激光器
  • 第三代半导体电力电子材料与器件(HEMT等)
  • 硅基氮化物半导体材料生长与器件制备
  • 宽禁带氮化物半导体新型光电子器件

招生信息

优先招收拟硕博连读的研究生

  • 微电子学与固体电子学
  • 半导体物理
  • 材料学
招生专业
080903-微电子学与固体电子学
080903-微电子学与固体电子学
080502-材料学
招生方向
氮化镓基HEMT功率器件的外延生长及工艺制备
硅衬底氮化镓基LED的外延生长及器件制备
氮化镓基激光器、超辐射发光管的外延生长及工艺制备

教育背景

2005-06--2009-08 美国耶鲁大学 博士
2002-09--2005-05 中国科学院半导体研究所 微电子与固体电子学工程硕士学位
2000-09--2002-07 中国科学技术大学 计算机科学与技术学士学位
1998-09--2002-07 中国科学技术大学 材料物理学士学位
学历
   
学位
   

工作经历

   
工作简历
2012-02--今 中国科学院苏州纳米技术与纳米仿生研究所 研究员、博士生导师
2010-06--2012-01 美国硅谷普瑞光电公司Bridgelux, Inc. 外延研发科学家
2009-09--2010-05 美国耶鲁大学 耶鲁大学电子工程系副研究员
社会兼职
   

教授课程

   

专利与奖励

  • 2015年国家技术发明一等奖获得者
  • 2015年中国电子学会优秀科技工作者
奖励信息
(1) 江苏省“双创计划”人才,省级,2012
(2) 江苏省苏州市“金鸡湖双百人才(海外高层次领军人才)”,市地级,2011
(3) 中组部首批“青年千人计划”,部委级,2011
(4) 美国康乃狄格州微电子与光电子论坛最佳学术报告奖,其他级,2010
(5) 美国耶鲁大学工学院最高奖Henry Prentiss Becton Graduate Prize,特等奖,研究所(学校)级,2010
(6) 中国国家优秀自费留学生奖学金,国家级,2009
(7) 耶鲁大学-日本Rigaku X光衍射研讨会最佳论文奖,专项级,2009
(8) 美国耶鲁大学Alpheus Beede Stickney奖学金,研究所(学校)级,2005
(9) 中国科学技术大学最高奖 郭沫若校长奖学金,研究所(学校)级,2002
(10) 中国科学技术大学优秀毕业生,研究所(学校)级,2002
(11) 中国科学技术大学优秀毕业论文奖,研究所(学校)级,2002
(12) 安徽省高等学校品学兼优毕业生,省级,2002
(13) 中国科学技术大学优秀学生干部,研究所(学校)级,2001
(14) 中国科学院上海硅酸盐研究所 严东升奖学金,研究所(学校)级,2001
(15) 光华奖学金,专项级,2000
专利成果
(1) Conductivity based selective etch for GaN devices and applications thereof,发明,2011,第2作者,专利号:US Patent PCT/US2011/022701
(2) 半导体异质结构、其制备方法及应用,发明,2015,第5作者,专利号:201510076931.4
(3) III族氮化物增强型HEMT及其制备方法,发明,2015,第1作者,专利号:201510102490.0
(4) 氮化物超辐射发光二极管及其制备方法,发明,2014,第2作者,专利号:201410776660.9

出版信息

   
发表论文
(1) The fabrication of large-area, free-standing GaN by a novel nanoetching process,Nanotechnology ,2011,第2作者
(2) Understanding and controlling heteroepitaxy with the kinetic Wulff plot: A case study with GaN,Journal of Applied Physics,2011,第1作者
(3) A conductivity-based selective etching for next generation GaN devices, Physica Status Solidi (b),2010,第5作者
(4) Surface and interface states of gallium-polar versus nitrogen-polar GaN: Impact of thin organic semiconductor overlayers,Journal of Applied Physics,2010,第3作者
(5) Electrical and luminescent properties and deep traps spectra of N-polar GaN films,Materials Science and Engineering B,2010,第4作者
(6) Nonpolar and semipolar GaN heteroepitaxy on sapphire for LED application,Invited paper, Proceeding of SPIE,2010,第1作者
(7) Improving microstructural quality of semipolar (1122) GaN on m-plane sapphire by a two-step growth process,Applied Physics Letters ,2009,第1作者
(8) Morphological and microstructural evolution in the two-step growth of nonpolar a-plane GaN on r-plane sapphire,Journal of Applied Physics ,2009,第1作者
(9) Epitaxial science of GaN: nanowires, quantum dots, and mesoscopic morphology,Invited paper, Proceeding of SPIE,2009,第1作者
(10) Effect of controlled growth dynamics on the microstructure of nonpolar a-plane GaN revealed by x-ray diffraction,Japanese Journal of Applied Physics,2009,第1作者
(11) N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition,Journal of Crystal Growth,2009,第1作者
(12) Nitride-organic hybrid heterostructures for possible novel optoelectronic devices: charge injection and transport,Physica Status Solidi (c),2009,第5作者
(13) Effect of NH3 flow rate on m-plane GaN growth on m-plane SiC by metalorganic chemical vapor deposition,Journal of Crystal Growth,2009,第1作者
(14) Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes,Applied Physics Letters ,2009,第4作者
(15) High-temperature AlN interlayer for crack-free AlGaN growth on GaN,Journal of Applied Physics,2008,第1作者
(16) Understanding nonpolar GaN growth through kinetic Wulff plots, Journal of Applied Physics,2008,第1作者
(17) Microstructural evolution in m-plane GaN growth on m-plane SiC,Applied Physics Letters ,2008,第1作者
(18) Reduction of stacking fault density in m-plane GaN grown on SiC,Applied Physics Letters,2008,第2作者
(19) Nitrogen-polar GaN growth evolution on c-plane sapphire, Applied Physics Letters,2008,第1作者
(20) Observation of oxide precipitates in InN nanostructures,Applied Physics Letters,2007,第3作者
(21) Depth dependence of structural quality in InN grown by metalorganic chemical vapor deposition,Materials Letters,2007,第3作者
(22) Heteroepitaxy of AlGaN on bulk AlN substrates for deep ultraviolet light emitting diodes,Applied Physics Letters,2007,第2作者
(23) AlGaN deep ultraviolet LEDs on bulk AlN substrates,Physica Status Solidi (c),2007,第2作者
(24) Spatial distribution of deep level defects in crack-free AlGaN grown on GaN with a high-temperature AlN interlayer,Journal of Applied Physics,2006,第1作者
(25) Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition,Journal of Crystal Growth,2006,第3作者
(26) Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells,Applied Surface Science ,2006,第1作者
(27) Effects of grain size on the mosaic tilt and twist in InN films grown on GaN by metal-organic chemical vapor deposition,Applied Physics Letters,2006,第3作者
(28) Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells,Applied Physics Letters,2005,第3作者
(29) Low-temperature growth of InN by MOCVD and its characterization,Journal of Crystal Growth,2005,第3作者
(30) Lateral phase separation in AlGaN grown on GaN with a high-temperature AlN interlayer,Applied Physics Letters,2005,第1作者
(31) Study on the thermal stability of InN by in-situ laser reflectance system,Journal of Crystal Growth,2005,第3作者
(32) One-step hydrothermal process to prepare highly crystalline Fe3O4 nanoparticles with improved magnetic properties,Materials Research Bulletin,2003,第3作者
发表著作
(1) 非极性和半极性氮化镓的异质外延,Heteroepitaxy of Nonpolar and Semipolar GaN, Book chapter in Advances in GaN and ZnO-based Thin Film, Bulk and Nanostructured Materials and Devices,Springer,2011-12,第2作者

科研活动

   
科研项目
(1) 新一代功率器件氮化镓复合材料外延技术研发,主持,市地级,2013-07--2016-06
(2) 高效光电转换纳米材料和器件关键技术,主持,部委级,2013-01--2015-12
(3) 大尺寸硅衬底上氮化镓外延生长及器件制备,主持,部委级,2012-05--2015-05
(4) 大尺寸硅衬底上氮化镓基高亮度LED的外延制备研发,主持,省级,2012-05--2014-12
参与会议
(1) Heteroepitaxy of Nonpolar and Semipolar GaN,第16届国际ICMOVPE会议,2012-05,Qian Sun, Benjamin Leung, and Jung Han
(2) Nonpolar and semipolar GaN heteroepitaxy on sapphire for LED application,2011-01,Q. Sun and J. Han
(3) GaN Kinetic Wulff Plot: Trends, Principles, and Applications,2010-09,C. D. Yerino, Q. Sun, B. Leung, Y. Zhang, J. Han, and M. Coltrin
(4) Heteroepitaxial Semipolar GaN-based Light-Emitting Diode,2010-04,Q. Sun, Y. Zhang, B. Leung, C. D. Yerino, and J. Han
(5) MOCVD Growth and Gas Sensing Application of Nitrogen-Polar GaN,2009-10,Q. Sun, Y. Zhang, I.-H. Lee, and J. Han
(6) Heteroepitaxy of C-plane (0001), Nonpolar A-plane (1120) and Semipolar (1122) GaN: Similarities and Differences,2009-10,Q. Sun, C. D. Yerino, B. Leung, T. S. Ko, Y. Zhang, I.-H. Lee, J. Han, B. H. Kong, and H. K. Cho
(7) N-polar (Al, In, Ga)N grown by metalorganic chemical vapor deposition,2009-06,Q. Sun, Y. Zhang, T. S. Ko, B. Leung, C. D. Yerino, I.-H. Lee, J. Han, Y.-L. Wang, F. Ren, H. Kim, and A. Nurmikko
(8) Nucleation and evolution in the two-step growth of a-plane GaN for improving the microstructural quality,2009-06,Q. Sun, T. S. Ko, C. D. Yerino, Y. Zhang, I.-H. Lee, J. Han, B. H. Kong, and H. K. Cho
(9) High Resolution X-Ray Diffraction of III-Nitride Wide Bandgap Semiconductors,2009-05,Q. Sun, B. Leung, and J. Han
(10) Epitaxial science of GaN: nanowires, quantum dots, and mesoscopic morphology,2009-01,Q. Sun, C. D. Yerino, B. Leung, and J. Han
(11) N-polar GaN and InGaN quantum wells grown by metalorganic chemical vapor deposition,2008-10,Q. Sun, Y. S. Cho, I.-H. Lee, J. Han, B. H. Kong, H. K. Cho, H. Kim, and A. Nurmikko
(12) N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition,2008-07,Q. Sun, Y. S. Cho, B. H. Kong, H. K. Cho, T. S. Ko, C. D. Yerino, I.-H. Lee, and J. Han
(13) Understanding nonpolar GaN growth through kinetic Wulff plot by Mesoscopic selective area growth,2008-06,Q. Sun, C. D. Yerino, T. S. Ko, Y. S. Cho, I.-H. Lee, and J. Han
(14) Two-step growth of N-polar GaN by metalorganic chemical vapor deposition,2008-06,Q. Sun, Y. S. Cho, I.-H. Lee, J. Han, B. H. Kong, H. K. Cho, H. Kim, and A. Nurmikko
(15) MOCVD growth of hexagonal nitride on Si(100),2007-11,Q. Sun, S.-Y. Kwon, and J. Han
(16) Morphological and microstructural evolution in m-plane GaN growth on 6H-SiC (1010),2007-06,Q. Sun, S.-Y. Kwon, Z. Ren, J. Han, T. Onuma, and S. F. Chichibu
(17) MOCVD growth of nonpolar m-plane AlN and GaN on 6H-SiC (1010) substrate,2006-06,Q. Sun, S.-Y. Kwon, Z. Ren and J. Han

合作情况

与晶能光电有限公司进行深入的产学研合作,研发及生产新一代硅衬底GaN基高效LED
项目协作单位
   

指导学生

现指导学生

严威  硕士研究生  080903-微电子学与固体电子学  

戴淑君  硕士研究生  080903-微电子学与固体电子学  

何俊蕾  硕士研究生  080903-微电子学与固体电子学  

周瑞  硕士研究生  080903-微电子学与固体电子学