研究方向

1. 低功耗氧化物薄膜晶体管
2. 半导体器件中的缺陷工程

发表期刊与论文100+篇，申请发明专利100+项（其中授权中国发明专利50+项，美国发明专利6项，转移转让8项） 

出版图书
1. S. K. Wang, Kinetics studies in GeO2/Ge system: A retrospective from 2021, CRC Press, Taylor & Francis, 2022.

2. S. K. Wang, X. L. Wang, MOS interface physics, process, and characterization, CRC Press, Taylor & Francis, 2021.

3. S. K. Wang, H. G. Liu, “Passivation and Characterization in High-k/III-V Interfaces”, in book entitled “Nanoscale Semiconductor Devices, MEMS, and Sensors: Outlook and Challenges”, Springer Publisher, New York, USA, 2017.

第一作者代表论文

1.S.-K. Wang*, Q. Huang, J. Zhao, Y. Zhou, X. L. Zhao, P. L. Yao, X. Y. Liu, X. L. Liang, Electro-chemiresistive Functionalization of SWCNT-TFT by PCz and Its “Electronic Hourglass” Application with Zero-static Power Consumption, ACS Applied Energy Materials, 2,11(2019) 8253. https://doi.org/10.1021/acsaem.9b01716
2. S.-K. Wang, B. Sun, M.-M. Cao, H.-D. Chang, Y.-Y. Su, H.-O. Li, and H.-G. Liu*, “Modification of Al₂O₃/InP interfaces using sulfur and nitrogen passivations,” J. Appl. Phys., 121 (2017) 184104.
3. S.-K. Wang, L. Ma, H.-D. Chang, B. Sun, Y.-Y. Su, L. Zhong, H.-O. Li, Z. Jin, X.-Y. Liu, and H.-G. Liu*, “Positive Bias Temperature Instability Degradation of Buried InGaAs Channel nMOSFETs with InGaP Barrier Layer and Al₂O₃ Dielectric,” Chin. Phys. Lett., 34 (2017) 057301.
4. S. K. Wang*, “Turbo charging the channel (Invited feature)”, Compound Semiconductor, 1, 22-30, (2016).
5. S. K. Wang*, M. Cao, B. Sun, H. Li, H. G. Liu, “Reducing the interface trap density in Al₂O₃/InP stacks by low-temperature thermal process”, Appl. Phys. Express 8, 091201 (2015).
6. S. K. Wang, H.-G. Liu*, and A. Toriumi, “Kinetic Study of GeO Disproportionation into GeO₂/Ge System Using X-ray Photoelectron Spectroscopy”, Appl. Phys. Lett. 101, 5 (2012)
7. S. K. Wang*, K. Kita, T. Nishimura, K. Nagashio, and A. Toriumi, “Isotope tracing study of GeO desorption mechanism from GeO₂/Ge stack using ⁷³Ge and ¹⁸O”, Jpn. J. Appl. Phys. 50, 04DA01 (2011).
8. S. K. Wang*, K. Kita, T. Nishimura, K. Nagashio, and A. Toriumi, “Kinetic Effects of O-vacancy Generated by GeO₂/Ge Interfacial Reaction”, Jpn. J. Appl. Phys. 50, 10PE04-1 (2011). Selected as the Spotlight paper of Japanese Journal of Applied Physics 2011.
9. S. K. Wang*, K. Kita, C. H. Lee, T. Tabata, T. Nishimura, K. Nagashio, and A. Toriumi, “Desorption kinetics of GeO from GeO₂/Ge structure”, J. Appl. Phys. 108, 054104 (2010).

通讯作者代表论文

1. Y. Xu, S. K. Wang*, P. L. Yao, Y. H. Wang, D. P. Chen, An air-plasma enhanced low-temperature wafer bonding method using high-concentration water glass adhesive layer, Appl. Surf. Sci. 500 (2019) 144007.
2. X. Y. Liu*, J. L. Hao, N. N. You, Y. Bai, S. K. Wang*, High pressure microwave plasma oxidation of 4H-SiC with low interface trap density, AIP Advances, 9 (2019) 125150..
3. X. Y. Liu*, J. L. Hao, N. N. You, Y. Bai, Y. D. Tang, C. Y. Yang, S. K. Wang*, High mobility SiC MOSFET with low Dit using high pressure microwave plasma oxidation, Chin. Phys. B, https://doi.org/10.1088/1674-1056/ab68c0.
4. Y. Xu, S. K. Wang*, Y. Wang, and D. Chen, “A modified low-temperature wafer bonding method using spot pressing bonding technique and water glass adhesive layer,” Jpn. J. Appl. Phys., 57 (2018) 02BD01.
5. Z. Y. Peng, S. K. Wang*, Y. Bai, Y. D. Tang, X. M. Chen, C. Z. Li, K. A. Liu, X. Y. Liu*, “High Temperature 1MHz Capacitance-Voltage Method for Evaluation of Border Traps in 4H-SiC MOS System”, J. Appl. Phys. 123 (2018) 135302.
6. X. Yang, S. K. Wang*, X. Zhang, B. Sun, W. Zhao, H. D. Chang, Z. H. Zeng, H. G. Liu*, “Al₂O₃/GeO_x gate stack on germanium substrate fabricated by in situ cycling ozone oxidation method”, Appl. Phys. Lett. 105 (2014) 092101.
7. L. Han, S.-K. Wang*, X. Zhang, B.-Q. Xue, W.-R. Wu, Y. Zhao, and H.-G. Liu*, “Effect of ultrathin GeO_x interfacial layer formed by thermal oxidation on Al₂O₃ capped Ge,” Chinese Physics B, 23 (2014) 046804.

代表会议论文
1.  S. K. Wang, “Germanium and III-Vs for future logic (Invited)”, Compound Semiconductor International 2017, Brussels Belgium, (March 7-8, 2017)
2.  S. K. Wang, “Rapid Growth of SiO₂ on SiC with Low Dit using High Pressure Microwave Oxygen Plasma (Invited)”, 13^th IEEE International Conference on ASIC, Chongqing, China, (Oct 9-Nov 1, 2019)
3.  S. K. Wang, J. L. Hao, N. N. You, Y. Bai, X. Y. Liu, “Rapid Growth of SiO2 on SiC with Atomically Flat Interface and Low Dit using High Pressure Microwave Oxygen Plasma”, The International Conference on Silicon Carbide and Related Materials 2019, Kyoto, Japan, (Sep. 28-Oct.5, 2019)
4.  S. K. Wang, Q. Huang, J. Zhao, X. Zhao, Y. Zhou, X. Liu, X. Liang*, Hysteretic Single Walled Carbon Nanotube Thin Film Transistor for Ultralow Static Power Consumption Application, 50^th International Conference on Solid State Devices and Materials, Tokyo, Japan, (Sep. 8-12, 2018).
5.  S. K. Wang, H. Chang, B. Sun, Z. Gong, H. G. Liu, M. Cao, Z. Lin, H. Li, “Coordination Number Modification at Al₂O₃/InP Interfaces using Sulfur and Nitride Passivations,” 7th Ieee International Nanoelectronics Conference, International Nanoelectronics Conference, Chengdu, China, (May 9-11, 2016).
6.  S. K. Wang, X. Yang, Z. J. Gong, B. Sun, W. Zhao, H. D. Chang, H. G. Liu, “Si-substrate-based High Mobility Ge-pMOSFETs Using Ozone Passivated Al₂O₃/GeO_x Gate Dielectric”, International Conference on Solid State Devices and Materials 2014, Fukuoka, Japan, (Sep.25-29, 2014).
7.  S. K. Wang, X. L. Wang, L. Han, W. Zhao, B. Sun, W. W. Wang, C. Zhao, H. Liu, Modified Deal-Grove model for the thermal oxidation of Ge and Al2O3 capped Ge, SSDM2013.
8.  S. K. Wang，“Interfaces in Ge MOSFETs (invited)”, 8^th National Functional Materials and Application Conference，Harbin, China, (Aug.24-26, 2013).
9.  S. K. Wang, H.-G. Liu, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi, “Investigations on GeO Disproportionation Using X-ray Photoelectron Spectroscopy,” Pacific Rim Meeting on Electrochemical and Solid State Science, Honolulu, USA, (Oct. 7-12, 2012).
10.  S. K. Wang, K. Kita, K. Nagashio, T. Nishimura, and A. Toriumi, “Oxygen Vacancy Formation, Diffusion and GeO desorption in GeO₂/Ge Stack”, 42th IEEE Semiconductor Interface Specialists Conference, Arlington , USA, (Dec.3-5, 2011)

代表授权发明专利

1. Shengkai Wang, Honggang Liu, Bing Sun, Hudong Chang, Composite Gate Dielectric Layer Applied to Group III-V Substrate and Method for Manufacturing the same, 2019.1.29, US 15/539,597
2. 王盛凯，刘洪刚，孙兵，常虎东，赵威, 一种锗纳米线叠层结构的制作方法，2016.8.17，中国，ZL 201310741585.8
3. 王盛凯，刘洪刚，孙兵，常虎东，赵威, 一种锗纳米线结构的制作方法，2015.4.1，中国，ZL 201310741573.5
4. 王盛凯，刘洪刚，孙兵，常虎东，赵威, 一种锗硅纳米线叠层结构的制作方法，2017.3.1，中国，ZL 201310740895.8
5. 王盛凯，刘洪刚，孙兵, 一种砷化镓表面形貌控制方法，2018.12.25，中国，ZL 201611251389.2
6. 王盛凯, 刘洪刚, 孙兵, 赵威, 薛百清, 一种硅基绝缘体上锗衬底结构及其制备方法，2016.12.7，中国，ZL 201210258454.X
7. 王盛凯, 刘洪刚, 孙兵, 薛百清, 常虎东, 赵威, 卢力, 王虹, 一种控制锗纳米微结构尺寸的方法，2015.7.29，中国，ZL 201110399431.6
8. 王盛凯, 李跃, 刘洪刚, 马磊, 孙兵, 常虎东, 王博, 一种环栅场效应晶体管及其制备方法，2019.8.20，中国，ZL 201611243062.0
9. 王盛凯, 李跃, 刘洪刚, 孙兵, 常虎东, 龚著靖, 一种垂直集成双栅MOSFET结构及其制备方法，2019.5.31，中国，ZL 201610868474.7
10.王盛凯, 李跃, 刘洪刚, 孙兵, 常虎东, 龚著靖, 应用于III-V族衬底的复合栅介质层及其制作方法，2018.5.8，中国，ZL 201510418996.2

承担科研项目情况：

1. 中国科学院青年促进会优秀会员项目 (2021-2024)

2. 国家重点研发计划项目课题-LTPO技术应用示范 (2021-2024)

3. 国家自然科学基金面上基金项目(62174176) “基于低温原子氧化的SiC MOSFET低界面态栅氧制造技术” (2022-2025) 

4. 国家自然科学基金面上基金项目(61974159) “基于有效离子半径理论的SiC MOSFET栅介质与界面配位调控研究” (2020-2023) 

5. 中国科学院仪器装备研制项目"低界面态、高可靠性SiC MOSFET高压微波等离子体栅氧生长系统“ (2019-2021)

6. 领域基金重点项目 ”低界面态碳纳米管MOSFET“ (2021-2024)

7. 创新特区项目 ”可穿戴柔性发电“ (2019-2021)

8. 中国科学院青年促进会项目 (2017-2020)
9. ASIC国家重点实验室开放课题：仿生神经元器件及细胞生物电行为模拟(2018-2019)
10. 中国工程物理研究院横向项目3项 (2016-2020)
11. 中国科学院重点实验室开放课题“二元系铁电氧化物极化行为研究”(2015-2016)
12. 国家自然科学基金青年基金项目(61204103) “Ge-MOS 技术中镧系复合高k介质与GeO2/Ge 界面调控的研究”（2013-2015）
13. 中国科学院人才基金A类重点项目-“基于光子晶体技术的硅基锗红外探测器研究” (2013-2014)
14. 日本G-COE项目课题“Ge-CMOSをめざした界面場制御に関する研究” (2009-2011)

参与科研项目情况：

1. 国家重点研发计划(2016YFA0202304)课题“二维原子晶体的材料制备和器件验证” (2016-2021)
2. 国家973项目（2010CB327500）课题“超高频化合物基CMOS器件和电路研究” (2010-2014)
3. 国家973项目（2011CBA00600）课题“超低功耗高性能集成电路器件与工艺基础研究” (2011-2015)
4. 国家02科技重大专项课题(2011ZX02708-003) “高迁移率CMOS新结构器件与工艺集成研究” (2011-2014)

获奖荣誉
1. 2023, Young Researcher Award, IWDTF2023, Japan (作为导师获奖）

2. 2021, 中国科学院青年创新促进会优秀会员

3. 2019, 北京市技术发明二等奖 “高电流密度电力电子器件关键技术及应用” 排名第10
4. 2017, 中国科学院青年创新促进会会员
5. 2018，中科院微电子所科普大赛一等奖
6. 2017，中科院微电子所科普大赛一等奖
7. 2011, Young Researcher Award, IEEE-IWDTF2011, Japan.
8. 2009-2011, Global Center of Excellence Scholarship, Japan.
9. 2008, 哈尔滨工业大学优秀毕业生－金牌
10. 2006, 国防科工委优秀毕业生

现课题组学生博士3人，硕士生7人

学生就业方向：人工智能、氧化物晶体管、科学研究