基本信息
康玄武  男    中国科学院微电子研究所
电子邮件: kangxuanwu@ime.ac.cn
通信地址: 朝阳区北土城西路三号
邮政编码: 100000

研究领域

GaN, Wireless Power Transfer, Power Devices

招生信息

招生专业
080903-微电子学与固体电子学
招生方向
化合物半导体器件与物理;电路与系统

出版信息

   
发表论文
[1] Zhao, Rikang, Kang, Xuanwu, Zheng, Yingkui, Wu, Hao, Wei, Nan, Deng, Shixiong, Wei, Ke, Liu, Xinyu. High-Power Microwave Limiters Using Recess-Free AlGaN/GaN Schottky Barrier Diodes. IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS[J]. 2023, 33(2): 208-211, http://dx.doi.org/10.1109/LMWC.2022.3204546.
[2] Hao Wu, Xuanwu Kang, Yingkui Zheng, Ke Wei, Lin Zhang, Xinyu Liu, Guoqi Zhang. Optimization of recess-free AlGaN/GaN Schottky barrier diode by TiN anode and current transport mechanism analysis. 半导体学报:英文版[J]. 2022, 43(6): 51-58, http://lib.cqvip.com/Qikan/Article/Detail?id=7107292838.
[3] Wu, Hao, Kang, Xuanwu, Zheng, Yingkui, Wei, Ke, Zhao, Rikang, Yuan, Yafei, Liu, Xinyu, Zhang, Guoqi. Origin of Soft Breakdown in Thin-Barrier AlGaN/GaN SBD With C-Doped GaN Buffer. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022, [4] 崔艺馨, 马英起, 上官士鹏, 康玄武, 刘鹏程, 韩建伟. 空间用GaN功率器件单粒子烧毁效应激光定量模拟技术研究. 物理学报[J]. 2022, 71(13): 301-310, http://lib.cqvip.com/Qikan/Article/Detail?id=7107604707.
[5] 陈延博, 杨兵, 康玄武, 郑英奎, 张静, 吴昊, 刘新宇. CMOS兼容的Si基GaN准垂直结构肖特基势垒二极管. 半导体技术[J]. 2022, 47(3): 179-183, http://lib.cqvip.com/Qikan/Article/Detail?id=7106888500.
[6] Zhang, Haitao, Kang, Xuanwu, Zheng, Yingkui, Wei, Ke, Wu, Hao, Liu, Xinyu, Ye, Tianchun, Jin, Zhi. Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode. MICROMACHINES[J]. 2022, 13(5): http://dx.doi.org/10.3390/mi13050748.
[7] 赵媛媛, 郑英奎, 康玄武, 孙跃, 吴昊, 魏珂, 刘新宇. Ar离子注入边缘终端准垂直GaN肖特基势垒二极管. 半导体技术[J]. 2021, 46(8): 623-629, http://lib.cqvip.com/Qikan/Article/Detail?id=7105389584.
[8] Kang, Xuanwu, Sun, Yue, Zheng, Yingkui, Wei, Ke, Wu, Hao, Zhao, Yuanyuan, Liu, Xinyu, Zhang, Guoqi. Low Leakage and High Forward Current Density Quasi-Vertical GaN Schottky Barrier Diode With Post-Mesa Nitridation. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(3): 1369-1373, http://dx.doi.org/10.1109/TED.2021.3050739.
[9] 刘芷诫, 郑英奎, 康玄武, 孙跃, 吴昊, 陈晓娟, 魏珂. AlGaN/GaN非凹槽混合阳极SBD射频性能及建模. 半导体技术[J]. 2021, 46(5): 358-364+381, http://lib.cqvip.com/Qikan/Article/Detail?id=7104818796.
[10] Li, Pengfei, Wei, Shuhua, Kang, Xuanwu, Zheng, Yingkui, Zhang, Jing, Wu, Hao, Wei, Ke, Yan, Jiang, Liu, Xinyu. Optimization of Oxygen Plasma Treatment on Ohmic Contact for AlGaN/GaN HEMTs on High-Resistivity Si Substrate. ELECTRONICS[J]. 2021, 10(7): https://doaj.org/article/75e93faa619e4744a88c935bdc1008d3.
[11] Sun, Yue, Kang, Xuanwu, Deng, Shixiong, Zheng, Yingkui, Wei, Ke, Xu, Linwang, Wu, Hao, Liu, Xinyu. First Demonstration of L-Band High-Power Limiter with GaN Schottky Barrier Diodes (SBDs) Based on Steep-Mesa Technology. ELECTRONICS[J]. 2021, 10(4): https://doaj.org/article/fc98604ca94a4b3f938abce9ff903c9c.
[12] Sun, Yue, Kang, Xuanwu, Deng, Shixiong, Zheng, Yingkui, Wei, Ke, Xu, Linwang, Wu, Hao, Liu, Xinyu. High-power and broadband microwave detection with a quasi-vertical GaN Schottky barrier diode by novel post-mesa nitridation. SEMICONDUCTOR SCIENCE AND TECHNOLOGY[J]. 2021, 36(3): http://dx.doi.org/10.1088/1361-6641/abd835.
[13] Bi, Lan, Kang, Xuanwu, Wang, Xinhua, Yin, Haibo, Fan, Jie, Wei, Ke, Zheng, Yingkui, Huang, Sen, Liu, Xinyu. Monolithic Integrated Normally OFF GaN Power Device With Antiparallel Lateral Schottky Barrier Controlled Schottky Rectifier. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(4): 1778-1783, http://dx.doi.org/10.1109/TED.2021.3058114.
[14] Wu, Hao, Kang, Xuanwu, Zheng, Yingkui, Wei, Ke, Sun, Yue, Li, Pengfei, Liu, Xinyu, Zhang, Guoqi. Analysis of reverse leakage mechanism in recess-free thin-barrier AlGaN/GaN Schottky barrier diode. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2021, 60(2): http://dx.doi.org/10.35848/1347-4065/abd86f.
[15] 李鹏飞, 魏淑华, 康玄武, 张静, 吴昊, 孙跃, 郑英奎. 氧等离子体表面处理对AlGaN/GaN HEMT欧姆接触的影响. 半导体技术[J]. 2021, 46(2): 134-138, http://lib.cqvip.com/Qikan/Article/Detail?id=7104194457.
[16] Hu, Zhuangzhuang, Li, Jianguo, Zhao, Chunyong, Feng, Zhaoqing, Tian, Xusheng, Zhang, Yanni, Zhang, Yachao, Ning, Jing, Zhou, Hong, Zhang, Chunfu, Lv, Yuanjie, Kang, Xuanwu, Feng, Hao, Feng, Qian, Zhang, Jincheng, Hao, Yue. Design and Fabrication of Vertical Metal/TiO2/beta-Ga2O3 Dielectric Heterojunction Diode With Reverse Blocking Voltage of 1010 V. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2020, 67(12): 5628-5632, http://dx.doi.org/10.1109/TED.2020.3033787.
[17] Hu, Zhuangzhuang, Zhou, Hong, Kang, Xuanwu, Zhang, Jincheng, Hao, Yue, Lv, Yuanjie, Zhao, Chunyong, Feng, Qian, Feng, Zhaoqing, Dang, Kui, Tian, Xusheng, Zhang, Yachao, Ning, Jing. Beveled Fluoride Plasma Treatment for Vertical $\beta$ -Ga2O3 Schottky Barrier Diode With High Reverse Blocking Voltage and Low Turn-On Voltage. IEEE ELECTRON DEVICE LETTERS[J]. 2020, 41(3): 441-444, http://dx.doi.org/10.1109/LED.2020.2968587.
[18] Feng, Zhaoqing, Cai, Yuncong, Li, Zhe, Hu, Zhuangzhuang, Zhang, Yanni, Lu, Xing, Kang, Xuanwu, Ning, Jing, Zhang, Chunfu, Feng, Qian, Zhang, Jincheng, Zhou, Hong, Hao, Yue. Design and fabrication of field-plated normally off beta-Ga2O3 MOSFET with laminated-ferroelectric charge storage gate for high power application. APPLIEDPHYSICSLETTERS[J]. 2020, 116(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000542954700001.
[19] Feng, Zhaoqing, Tian, Xusheng, Li, Zhe, Hu, Zhuangzhuang, Zhang, Yanni, Kang, Xuanwu, Ning, Jing, Zhang, Yachao, Zhang, Chunfu, Feng, Qian, Zhou, Hong, Zhang, Jincheng, Hao, Yue. Normally-Off beta-Ga2O3 Power MOSFET With Ferroelectric Charge Storage Gate Stack Structure. IEEE ELECTRON DEVICE LETTERS[J]. 2020, 41(3): 333-336, https://www.webofscience.com/wos/woscc/full-record/WOS:000519704300006.
[20] Xiao Yifan, Min Long, Liu Xinke, Liu Wenjun, Younis Usman, Peng Tonghua, Kang Xuanwu, Wu Xiaohan, Ding Shijin, Zhang David Wei. Facile integration of MoS2/SiC photodetector by direct chemical vapor deposition. NANOPHOTONICS[J]. 2020, 9(9): 3035-3044, https://doaj.org/article/ca52c68e497140feb77445d69fd82ee7.
[21] 赵志波, 杨兵, 康玄武, 张静, 吴昊, 孙跃, 郑英奎, 魏珂. 退火处理降低AlGaN/GaN台面隔离电流. 半导体技术[J]. 2020, 45(4): 293-297, http://lib.cqvip.com/Qikan/Article/Detail?id=7101693229.
[22] Feng, Zhaoqing, Cai, Yuncong, Li, Zhe, Hu, Zhuangzhuang, Zhang, Yanni, Lu, Xing, Kang, Xuanwu, Ning, Jing, Zhang, Chunfu, Feng, Qian, Zhang, Jincheng, Zhou, Hong, Hao, Yue. Design and fabrication of field-plated normally off beta -Ga2O3 MOSFET with laminated-ferroelectric charge storage gate for high power application. APPLIED PHYSICS LETTERS[J]. 2020, 116(24): [23] Sun, Yue, Kang, Xuanwu, Zheng, Yingkui, Wei, Ke, Li, Pengfei, Wang, Wenbo, Liu, Xinyu, Zhang, Guoqi. Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics. NANOMATERIALS[J]. 2020, 10(4): https://doaj.org/article/a15e7c507cdb4838894bd3db7a0f4c4d.
[24] Huang Sen, Wang Xinhua, Liu Xinyu, Kang Xuanwu, Fan Jie, Yang Shuo, Yin Haibo, Wei Ke, Zheng Yingkui, Wang Xiaolei, Wang Wenwu, Shi Jingyuan, Gao Hongwei, Sun Qian, Chen Kevin J, IEEE. Revealing the Positive Bias Temperature Instability in Normally-OFF AlGaN/GaN MIS-HFETs by Constant-Capacitance DLTS. 2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)null. 2019, 411-414, [25] 康玄武, 郑英奎, 王鑫华, 黄森, 魏珂, 吴昊, 孙跃, 赵志波, 刘新宇. AlGaN/GaN异质结肖特基二极管研究进展. 电源学报[J]. 2019, 17(3): 44-52, http://lib.cqvip.com/Qikan/Article/Detail?id=7002181403.
[26] Sun, Yue, Kang, Xuanwu, Zheng, Yingkui, Lu, Jiang, Tian, Xiaoli, Wei, Ke, Wu, Hao, Wang, Wenbo, Liu, Xinyu, Zhang, Guoqi. Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs). ELECTRONICSnull. 2019, 8(5): https://doaj.org/article/a2552996f16e4d98913c6cc9bf22432c.
[27] 吴昊, 康玄武, 杨兵, 张静, 赵志波, 孙跃, 郑英奎, 魏珂, 闫江. 无凹槽AlGaN/GaN肖特基势垒二极管正向电流输运机制. 半导体技术[J]. 2019, 44(6): 426-432, http://lib.cqvip.com/Qikan/Article/Detail?id=7002267779.
[28] Zhang, Jinhan, Kang, Xuanwu, Wang, Xinhua, Huang, Sen, Chen, Chen, Wei, Ke, Zheng, Yingkui, Zhou, Qi, Chen, Wanjun, Zhang, Bo, Liu, Xinyu. Ultralow-Contact-Resistance Au-Free Ohmic Contacts With Low Annealing Temperature on AlGaN/GaN Heterostructures. IEEE ELECTRON DEVICE LETTERS[J]. 2018, 39(6): 847-850, https://www.webofscience.com/wos/woscc/full-record/WOS:000437086800016.
[29] Kang Xuanwu, Wang Xinhua, Huang Sen, Zhang Jinhan, Fan Jie, Yang Shuo, Wang Yuankun, Zheng Yingkui, Wei Ke, Zhi Jin, Liu Xinyu, IEEE. Recess-Free AlGaN/GaN Lateral Schottky Barrier Controlled Schottky Rectifier with Low Turn-on Voltage and High Reverse Blocking. PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)null. 2018, 280-283, [30] Huang, Sen, Liu, Xinyu, Wang, Xinhua, Kang, Xuanwu, Zhang, Jinhan, Fan, Jie, Shi, Jingyuan, Wei, Ke, Zheng, Yingkui, Gao, Hongwei, Sun, Qian, Wang, Maojun, Shen, Bo, Chen, Kevin J. Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2018, 65(1): 207-214, https://www.webofscience.com/wos/woscc/full-record/WOS:000418753200030.
[31] Liu, Xinyu, Wang, Xinhua, Zhang, Yange, Wei, Ke, Zheng, Yingkui, Kang, Xuanwu, Jiang, Haojie, Li, Junfeng, Wang, Wenwu, Wu, Xuebang, Wang, Xianping, Huang, Sen. Insight into the Near-Conduction Band States at the Crystallized Interface between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition. ACS APPLIED MATERIALS & INTERFACES[J]. 2018, 10(25): 21721-21729, http://dx.doi.org/10.1021/acsami.8b04694.
[32] Hu, Zhuangzhuang, Zhou, Hong, Feng, Qian, Zhang, Jincheng, Zhang, Chunfu, Dang, Kui, Cai, Yuncong, Feng, Zhaoqing, Gao, Yangyang, Kang, Xuanwu, Hao, Yue. Field-Plated Lateral beta-Ga2O3 Schottky Barrie Diode With High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm(2). IEEE ELECTRON DEVICE LETTERS[J]. 2018, 39(10): 1564-1567, https://www.webofscience.com/wos/woscc/full-record/WOS:000446449300020.
[33] 黄森, 魏珂, 章晋汉, 康玄武, 王鑫华. Investigation of current collapse mechanism of LPCVD Si3N4 passivated AlGaN/GaN HEMTs by fast soft-switched current-DLTS and CC-DLTFS. Power Semiconductor Devices and IC's (ISPSD)null. 2017, http://159.226.55.106/handle/172511/18240.
[34] 王鑫华, 黄森, 康玄武, 刘新宇. 绝缘栅GaN基平面功率开关器件技术. 电力电子技术[J]. 2017, 51(8): 65-70, http://lib.cqvip.com/Qikan/Article/Detail?id=673010498.
[35] Huang, Sen, Liu, Xinyu, Wang, Xinhua, Kang, Xuanwu, Zhang, Jinhan, Bao, Qilong, Wei, Ke, Zheng, Yingkui, Zhao, Chao, Gao, Hongwei, Sun, Qian, Zhang, Zhaofu, Chen, Kevin J. High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure. IEEE ELECTRON DEVICE LETTERS[J]. 2016, 37(12): 1617-1620, http://www.irgrid.ac.cn/handle/1471x/1175215.
[36] Van Hove, Marleen, Kang, Xuanwu, Stoffels, Steve, Wellekens, Dirk, Ronchi, Nicolo, Venegas, Rafael, Geens, Karen, Decoutere, Stefaan. Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With Al2O3 and Si3N4/Al2O3 Gate Dielectrics. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2013, 60(10): 3071-3078, https://www.webofscience.com/wos/woscc/full-record/WOS:000324928900015.