基本信息
骆军委 男 博导 半导体研究所
电子邮件:jwluo@semi.ac.cn
通信地址:北京市海淀区清华东路甲35号超晶格室
邮政编码:100083

研究领域

  • 半导体(信息功能和新能源)材料能带工程和理论设计;
  • 低维半导体量子结构光电效应和自旋电子学;
  • 半导体器件全量子力学模拟

招生信息

本团队长期从事半导体信息功能材料和新能源材料的理论设计和器件模拟,拥有院士一位、中组部**和****各一位、中科院****一位和副研究员三位。面向凝聚态物理、材料物理和微电子专业每年招硕士6名和博士4名。
招生专业
070205-凝聚态物理
招生方向
半导体物理;光电信息功能材料;新能源材料;理论预测和器件模拟

教育背景

2003-03--2006-11 中国科学院半导体研究所 博士
2000-09--2003-02 浙江大学 硕士
1996-09--2000-07 浙江大学 学士

工作经历

   
工作简历
2013-11--2014-01 National Renewable Energy Laboratory Senior Scientist
2009-11--2013-11 National Renewable Energy Laboratory Staff Scientist
2007-01--2009-11 National Renewable Energy Laboratory 博士后

专利与奖励

   
专利成果
[1] 何力, 骆军委, 温书育, 朱元昊, 刘昊文, 管闪. 晶体锗材料的表面非晶化的方法. CN: CN113846384A, 2021-12-28.
[2] 何力, 骆军委, 温书育, 朱元昊, 刘昊文, 管闪. 含惰性气体原子的晶格损伤层的重结晶方法. CN: CN113851373A, 2021-12-28.
[3] 李媛媛, 刘俊岐, 刘峰奇, 骆军委, 翟慎强, 张锦川, 卓宁, 王利军, 刘舒曼, 梁平, 胡颖. 光反馈结构及其封装方法. CN: CN113381289A, 2021-09-10.
[4] 何力, 骆军委. 应变锗沟道晶体管及其制备方法. CN: CN112701044A, 2021-04-23.
[5] 骆军委, 袁林丁, 李树深. 直接带隙发光的硅基材料及制备方法、芯片上发光器件. CN: CN108461584A, 2018-08-28.

出版信息

   
发表论文
[1] Gu, YuXiang, Liu, WenHao, 王峙, Li, ShuShen, Wang, LinWang, Luo, JunWei. Origin of Immediate Damping of Coherent Oscillations in Photoinduced Charge Density Wave Transition. Physical review letters[J]. 2023, 130: 146901-, http://dx.doi.org/10.1103/PhysRevLett.130.146901.
[2] Guan, Shan, Luo, JunWei, Li, ShuShen, Zunger, Alex. Hidden Zeeman-type spin polarization in bulk crystals. PHYSICAL REVIEW B[J]. 2023, 107(8): http://dx.doi.org/10.1103/PhysRevB.107.L081201.
[3] Chen Chen, Wenhao Liu, Faqiang Zhang, Xiang He, Hanliang Fang, Xiu Li, Yunyun Gong, Xiao Wang, Junwei Luo, Chris D Ling, Zhiguo Yi. Discovery of photoinduced bidirectional shape deformation in inorganic solid. MATTER. 2023, 6(1): 175-192, http://dx.doi.org/10.1016/j.matt.2022.09.028.
[4] 骆军委, 李树深. 加强半导体基础能力建设点亮半导体自立自强发展的“灯塔”. 中国科学院院刊[J]. 2023, 38(2): 187-192, http://lib.cqvip.com/Qikan/Article/Detail?id=7109007837.
[5] 管闪, 熊嘉欣, 王峙, 骆军委. Progress of hidden spin polarization in inversion-symmetric crystals. Science China Physics, Mechanics & Astronomy[J]. 2022, 65(3): 237301-, [6] Yang Liu, Junwei Luo. Zoo of silicon-based quantum bits. 创新(英文). 2022, 3(6): 27-28, http://lib.cqvip.com/Qikan/Article/Detail?id=7108387623.
[7] Liu, WenHao, Wang, Zhi, Chen, ZhangHui, Luo, JunWei, Li, ShuShen, Wang, LinWang. Algorithm advances and applications of time-dependent first-principles simulations for ultrafast dynamics. WILEY INTERDISCIPLINARY REVIEWS-COMPUTATIONAL MOLECULAR SCIENCE[J]. 2022, 12(3): http://dx.doi.org/10.1002/wcms.1577.
[8] 刘洋, 熊嘉欣, 王峙, 马稳龙, 管闪, 骆军委, 李树深. Emergent linear Rashba spin-orbit coupling offers fast manipulation of hole-spin qubits in germanium. Physical Review B[J]. 2022, 105(7): 075313-, [9] Xuefen Cai, Jun-Wei Luo, Shu-Shen Li, Su-Huai Wei, Hui-Xiong Deng. Overcoming the doping limit in semiconductors via illumination. Physical Review B[J]. 2022, 106(21): 214102-, https://doi.org/10.1103/PhysRevB.106.214102.
[10] Xiong, JiaXin, Guan, Shan, Luo, JunWei, Li, ShuShen. Orientation-dependent Rashba spin-orbit coupling of two-dimensional hole gases in semiconductor quantum wells: Linear or cubic. PHYSICAL REVIEW B[J]. 2022, 105(11): http://dx.doi.org/10.1103/PhysRevB.105.115303.
[11] Gu, Yuxiang, Shi, Lin, Luo, JunWei, Li, ShuShen, Wang, LinWang. Directly Confirming the Z (1/2) Center as the Electron Trap in SiC Through Accessing the Nonradiative Recombination. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS[J]. 2022, 16(2): http://dx.doi.org/10.1002/pssr.202100458.
[12] 刘昊文, 刘文浩, 索曌君, 王峙, 骆军委, 李树深, 汪林望. Unifying the order and disorder dynamics in photoexcited VO2. Proceedings of the National Academy of Sciences of the United States of America[J]. 2022, 119(28): e2122534119-, https://doi.org/10.1073/pnas.2122534119.
[13] Liu, WenHao, Luo, JunWei, Li, ShuShen, Wang, LinWang. The seeds and homogeneous nucleation of photoinduced nonthermal melting in semiconductors due to self-amplified local dynamic instability. SCIENCE ADVANCES[J]. 2022, 8(27): [14] Zhao, Shuai, Yuan, Guodong, Zhu, Qiuhao, Song, Luhang, Zhang, Di, Liu, Yumeng, Lu, Jun, Han, Weihua, Luo, Junwei. Cryogenic Mobility Enhancement Si MOS Devices via SiO2 Regrowth. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2022, 69(5): 2585-2589, http://dx.doi.org/10.1109/TED.2022.3158628.
[15] Liu, WenHao, Luo, JunWei, Li, ShuShen, Wang, LinWang. Dynamic short-range correlation in photoinduced disorder phase transitions. PHYSICALREVIEWB[J]. 2022, 105(22): [16] Wang, Gang, Song, ZhiGang, Luo, JunWei, Li, ShuShen. Origin of giant valley splitting in silicon quantum wells induced by superlattice barriers. PHYSICAL REVIEW B[J]. 2022, 105(16): http://dx.doi.org/10.1103/PhysRevB.105.165308.
[17] Zhaojun Suo, Linwang Wang, Shushen Li, Junwei Luo. Clarifying the atomic origin of electron killers in β-Ga_(2)O_(3) from the first-principles study of electron capture rates. 半导体学报:英文版[J]. 2022, 43(11): 61-69, http://lib.cqvip.com/Qikan/Article/Detail?id=7108338035.
[18] Zhang, Di, Yuan, Guodong, Zhao, Shuai, Lu, Jun, Luo, Junwei. Low-thermal-budget n-type ohmic contacts for ultrathin Si/Ge superlattice materials. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2022, 55(35): http://dx.doi.org/10.1088/1361-6463/ac7366.
[19] WenHao Liu, JunWei Luo, ShuShen Li, LinWang Wang. The critical role of hot carrier cooling in optically excited structural transitions. NPJ COMPUTATIONAL MATERIALS[J]. 2021, 7(1): http://dx.doi.org/10.1038/s41524-021-00582-w.
[20] Li, YuanYuan, Zhao, FangYuan, Ma, Yu, Li, WeiJiang, Liu, JunQi, Liu, FengQi, Luo, JunWei, Zhang, JinChuan, Zhai, ShenQiang, Zhuo, Ning, Wang, LiJun, Liu, ShuMan. Terahertz quantum cascade laser array with spatially-separated beams. OPTICS AND LASER TECHNOLOGY[J]. 2021, 143: http://dx.doi.org/10.1016/j.optlastec.2021.107346.
[21] 施亨宪, 杨凯科, 骆军委. Ⅲ-Ⅴ族硼基化合物半导体反常热导率机理. 物理学报[J]. 2021, 70(14): 282-289, http://lib.cqvip.com/Qikan/Article/Detail?id=7105192626.
[22] Xiong, JiaXin, Guan, Shan, Luo, JunWei, Li, ShuShen. Emergence of strong tunable linear Rashba spin-orbit coupling in two-dimensional hole gases in semiconductor quantum wells. PHYSICAL REVIEW B[J]. 2021, 103(8): https://www.webofscience.com/wos/woscc/full-record/WOS:000620773900003.
[23] 朱元昊, 温书育, 何力, 骆军委. 后摩尔时代硅基片上光源研究进展. 微纳电子与智能制造[J]. 2021, 3(1): 136-149, http://lib.cqvip.com/Qikan/Article/Detail?id=7106009189.
[24] Yuan, LinDing, 王峙, Luo, JunWei, Zunger, Alex. Strong influence of nonmagnetic ligands on the momentum-dependent spin splitting in antiferromagnets. PHYSICAL REVIEW B[J]. 2021, 103(22): [25] Gu, Yuxiang, Shi, Lin, Luo, JunWei, Li, ShuShen, Wang, LinWang. Directly Confirming the Z (1/2) Center as the Electron Trap in SiC Through Accessing the Nonradiative Recombination. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS[J]. 2021, 16(2): 2100458-, [26] Yuan, LinDing, 王峙, Luo, JunWei, Zunger, Alex. Prediction of low-Z collinear and noncollinear antiferromagnetic compounds having momentum-dependent spin splitting even without spin-orbit coupling. PHYSICAL REVIEW MATERIALS[J]. 2021, 5(1): https://www.webofscience.com/wos/woscc/full-record/WOS:000608669800007.
[27] Liu, WenHao, Luo, JunWei, Li, ShuShen, Wang, LinWang. Microscopic force driving the photoinduced ultrafast phase transition: Time-dependent density functional theory simulations of IrTe2. PHYSICAL REVIEW B[J]. 2020, 102(18): [28] Suo, ZhaoJun, Luo, JunWei, Li, ShuShen, Wang, LinWang. Image charge interaction correction in charged-defect calculations. PHYSICAL REVIEW B[J]. 2020, 102(17): [29] Liu, Feilong, Liu, YueYang, Li, Ling, Zhou, Guofu, Jiang, Xiangwei, Luo, JunWei. Three-Dimensional Mechanistic Modeling of Gate Leakage Current in High-kappa MOSFETs. PHYSICAL REVIEW APPLIED[J]. 2020, 13(2): https://www.webofscience.com/wos/woscc/full-record/WOS:000513243900004.
[30] Guan, Shan, Luo, JunWei. Electrically switchable hidden spin polarization in antiferroelectric crystals. PHYSICAL REVIEW B[J]. 2020, 102(18): https://www.webofscience.com/wos/woscc/full-record/WOS:000587594900002.
[31] Xiao, Jin, Yang, Kaike, Guo, Dan, Shen, Tao, Deng, HuiXiong, Li, ShuShen, Luo, JunWei, Wei, SuHuai. Realistic dimension-independent approach for charged-defect calculations in semiconductors. PHYSICALREVIEWB[J]. 2020, 101(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000526036000003.
[32] 骆军委. Three-Dimensional Mechanistic Modeling of Gate Leakage Current in High-κ MOSFETs. PHYSICAL REVIEW APPLIED. 2020, [33] 骆军委. Theory of Silicon-Based Light Emitting. ECS Transactions. 2020, [34] Yuan, LinDing, 王峙, Luo, JunWei, Rashba, Emmanuel, I, Zunger, Alex. Giant momentum-dependent spin splitting in centrosymmetric low-Z antiferromagnets. PHYSICAL REVIEW B[J]. 2020, 102(1): https://www.webofscience.com/wos/woscc/full-record/WOS:000548447500002.
[35] Huang, Yuanyuan, Yartsev, Arkady, Guan, Shan, Zhu, Lipeng, Zhao, Qiyi, Yao, Zehan, He, Chuan, Zhang, Longhui, Bai, Jintao, Luo, Junwei, Xu, Xinlong. Hidden spin polarization in the centrosymmetric MoS2 crystal revealed via elliptically polarized terahertz emission. PHYSICAL REVIEW B[J]. 2020, 102(8): https://www.webofscience.com/wos/woscc/full-record/WOS:000562933100004.
[36] Ji, ZhiMin, Luo, JunWei, Li, ShuShen. Interface-engineering enhanced light emission from Si/Ge quantum dots. NEW JOURNAL OF PHYSICS[J]. 2020, 22(9): https://www.webofscience.com/wos/woscc/full-record/WOS:000573298600001.
[37] Chen, Zhanghui, Luo, JunWei, Wang, LinWang. Revealing angular momentum transfer channels and timescales in the ultrafast demagnetization process of ferromagnetic semiconductors. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA[J]. 2019, 116(39): 19258-19263, [38] Ruyue Cao, HuiXiong Deng, JunWei Luo, SuHuai Wei. Origin of the anomalous trends in band alignment of GaX/ZnGeX2 (X = N, P, As, Sb) heterojunctions. 半导体学报:英文版[J]. 2019, 40(4): 17-21, http://lib.cqvip.com/Qikan/Article/Detail?id=7001831620.
[39] Yang, Kaike, Xiao, Jin, Luo, JunWei, Li, ShuShen, Wei, SuHuai, Deng, HuiXiong. A systematic study of the negative thermal expansion in zinc-blende and diamond-like semiconductors. NEW JOURNAL OF PHYSICS[J]. 2019, 21(12): http://dx.doi.org/10.1088/1367-2630/ab5cb3.
[40] Liu, WenHao, Luo, JunWei, Li, ShuShen, Wang, LinWang. Impurity diffusion induced dynamic electron donors in semiconductors. PHYSICAL REVIEW B[J]. 2019, 100(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000491466400001.
[41] Ruyue Cao, HuiXiong Deng, JunWei Luo, SuHuai Wei. Origin of the anomalous trends in band alignment of GaX/ZnGeX2 (X = N, P, As, Sb) heterojunctions. JOURNAL OF SEMICONDUCTORS[J]. 2019, 40(4): http://lib.cqvip.com/Qikan/Article/Detail?id=7001831620.
[42] Cao, Ruyue, Deng, HuiXiong, Luo, JunWei. Design Principles of p-Type Transparent Conductive Materials. ACS APPLIED MATERIALS & INTERFACES[J]. 2019, 11(28): 24837-24849, http://dx.doi.org/10.1021/acsami.9b01255.
[43] 王峙, Liu, Qihang, Luo, JunWei, Zunger, Alex. Digging for topological property in disordered alloys: the emergence of Weyl semimetal phase and sequential band inversions in PbSe-SnSe alloys. MATERIALS HORIZONS[J]. 2019, 6(10): 2124-2134, https://www.webofscience.com/wos/woscc/full-record/WOS:000498631800014.
[44] 王峙, Luo, JunWei, Zunger, Alex. Alloy theory with atomic resolution for Rashba or topological systems. PHYSICAL REVIEW MATERIALS[J]. 2019, 3(4): https://www.webofscience.com/wos/woscc/full-record/WOS:000466615400003.
[45] Liu, YueYang, Liu, Feilong, Wang, Runsheng, Luo, JunWei, Jiang, Xiangwei, Huang, Ru, Li, ShuShen, Wang, LinWang. Characterizing the Charge Trapping across Crystalline and Amorphous Si/SiO2/HfO2 Stacks from First-Principle Calculations. PHYSICAL REVIEW APPLIED[J]. 2019, 12(6): http://dx.doi.org/10.1103/PhysRevApplied.12.064012.
[46] Yuan, Linding, Liu, Qihang, Zhang, Xiuwen, Luo, JunWei, Li, ShuShen, Zunger, Alex. Uncovering and tailoring hidden Rashba spin-orbit splitting in centrosymmetric crystals. NATURE COMMUNICATIONS[J]. 2019, 10(1): https://doaj.org/article/5d75239ac7584779b1bfb4dae0a07e69.
[47] Liu, YueYang, Zheng, Fan, Jiang, Xiangwei, Luo, JunWei, Li, ShuShen, Wang, LinWang. Ab Initio Investigation of Charge Trapping Across the Crystalline-Si-Amorphous-SiO2 Interface. PHYSICAL REVIEW APPLIED[J]. 2019, 11(4): https://www.webofscience.com/wos/woscc/full-record/WOS:000465185400002.
[48] Guo, LingJu, Luo, JunWei, He, Tao, Wei, SuHuai, Li, ShuShen. Photocorrosion-Limited Maximum Efficiency of Solar Photoelectrochemical Water Splitting. PHYSICAL REVIEW APPLIED[J]. 2018, 10(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000454434500001.
[49] Xiong, Wen, Xu, Xiulai, Luo, JunWei, Gong, Ming, Li, ShuShen, Guo, GuangCan. Fundamental Intrinsic Lifetimes in Semiconductor Self-Assembled Quantum Dots. PHYSICAL REVIEW APPLIED[J]. 2018, 10(4): http://dx.doi.org/10.1103/PhysRevApplied.10.044009.
[50] 邓惠雄, 骆军委, 魏苏淮. Band structure engineering and defect control of oxides for energy applications. 中国物理B:英文版[J]. 2018, 27(11): 112-119, http://lib.cqvip.com/Qikan/Article/Detail?id=676726989.
[51] Deng, HuiXiong, Luo, JunWei, Wei, SuHuai. Band structure engineering and defect control of oxides for energy applications. CHINESE PHYSICS B[J]. 2018, 27(11): 112-119, http://lib.cqvip.com/Qikan/Article/Detail?id=676726989.
[52] Deng, HuiXiong, Song, ZhiGang, Li, ShuShen, Wei, SuHuai, Luo, JunWei. Atomic-Ordering-Induced Quantum Phase Transition between Topological Crystalline Insulator and Z(2) Topological Insulator. CHINESE PHYSICS LETTERS[J]. 2018, 35(5): 104-109, http://lib.cqvip.com/Qikan/Article/Detail?id=675655192.
[53] Fan, ZhiQang, Jiang, XiangWei, Chen, Jiezhi, Luo, JunWei. Improving Performances of In-Plane Transition-Metal Dichalcogenide Schottky Barrier Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES[J]. 2018, 10(22): 19271-19277, https://www.webofscience.com/wos/woscc/full-record/WOS:000434895500092.
[54] 邓惠雄, 宋志刚, 李树深, 魏苏淮, 骆军委. Atomic-Ordering-Induced Quantum Phase Transition between Topological Crystalline Insulator and Z_2 Topological Insulator. 中国物理快报:英文版[J]. 2018, 35(5): 104-109, http://lib.cqvip.com/Qikan/Article/Detail?id=675655192.
[55] Sheng, Shaoxiang, Ma, Runze, Wu, Jiangbin, Li, Wenbin, Kong, Longjuan, Cong, Xin, Cao, Duanyun, Hu, Wenqi, Gou, Jian, Luo, JunWei, Cheng, Peng, Tan, PingHeng, Jiang, Ying, Chen, Lan, Wu, Kehui. The Pentagonal Nature of Self-Assembled Silicon Chains and Magic Clusters on Ag(110). NANO LETTERS[J]. 2018, 18(5): 2937-2942, https://www.webofscience.com/wos/woscc/full-record/WOS:000432093200028.
[56] Yuan, LinDing, Deng, HuiXiong, Li, ShuShen, Wei, SuHuai, Luo, JunWei. Unified theory of direct or indirect band-gap nature of conventional semiconductors. PHYSICAL REVIEW B[J]. 2018, 98(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000454424800017.
[57] Fan, ZhiQiang, Sun, WeiYu, Jiang, XiangWei, Luo, JunWei, Li, ShuShen. Two dimensional Schottky contact structure based on in-plane zigzag phosphorene nanoribbon. ORGANIC ELECTRONICS[J]. 2017, 44: 20-24, http://dx.doi.org/10.1016/j.orgel.2017.02.002.
[58] Luo, JunWei, Li, ShuShen, Zunger, Alex. Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor Nanowires. PHYSICAL REVIEW LETTERS[J]. 2017, 119(12): http://ir.semi.ac.cn/handle/172111/28569.
[59] Luo JW, Li SS, Sychugov I, Pevere F, Linnros J, Zunger A.. Absence of redshift in the direct bandgap of silicon nanocrystals with reduced size. NATURE NANOTECHNOLOGY[J]. 2017, 12: 930–932-, http://ir.semi.ac.cn/handle/172111/28566.
[60] Ye, Zhenyu, Cui, Shengtao, Shu, Tianyu, Ma, Songsong, Liu, Yang, Sun, Zhe, Luo, JunWei, Wu, Huizhen. Electronic band structure of epitaxial PbTe (111) thin films observed by angle-resolved photoemission spectroscopy. PHYSICAL REVIEW B[J]. 2017, 95(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000400066400010.
[61] Fan, ZhiQiang, Jiang, XiangWei, Luo, JunWei, Jiao, LiYing, Huang, Ru, Li, ShuShen, Wang, LinWang. In-plane Schottky-barrier field-effect transistors based on 1T/2H heterojunctions of transition-metal dichalcogenides. PHYSICAL REVIEW B[J]. 2017, 96(16): 165402-1-165402-7, http://ir.semi.ac.cn/handle/172111/28571.
[62] Fan, ZhiQiang, Jiang, XiangWei, Wei, Zhongming, Luo, JunWei, Li, ShuShen. Tunable Electronic Structures of GeSe Nanosheets and Nanoribbons. JOURNAL OF PHYSICAL CHEMISTRY C[J]. 2017, 121(26): 14373-14379, https://www.webofscience.com/wos/woscc/full-record/WOS:000405252800046.
[63] Wei, Hai, Luo, JunWei, Li, ShuShen, Wang, LinWang. Revealing the Origin of Fast Electron Transfer in TiO2-Based Dye Sensitized Solar Cells. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY[J]. 2016, 138(26): 8165-8174, http://dx.doi.org/10.1021/jacs.6b03524.
[64] Sychugov, Ilya, Pevere, Federico, Luo, JunWei, Zunger, Alex, Linnros, Jan. Single-dot absorption spectroscopy and theory of silicon nanocrystals. PHYSICAL REVIEW B[J]. 2016, 93(16): http://ir.semi.ac.cn/handle/172111/27991.
[65] Lee, Benjamin G, Luo, JunWei, Neale, Nathan R, Beard, Matthew C, Hiller, Daniel, Zacharias, Margit, Stradins, Paul, Zunger, Alex. Quasi-Direct Optical Transitions in Silicon Nanocrystals with Intensity Exceeding the Bulk. NANO LETTERS[J]. 2016, 16(3): 1583-1589, http://dx.doi.org/10.1021/acs.nanolett.5b04256.
[66] Sychugov, Ilya, Sangghaleh, Fatemeh, Bruhn, Benjamin, Pevere, Federico, Luo, JunWei, Zunger, Alex, Linnros, Jan. Strong Absorption Enhancement in Si Nanorods. NANO LETTERS[J]. 2016, 16(12): 7937-7941, http://ir.semi.ac.cn/handle/172111/27992.
[67] Jiang XiangWei, Lv Juan, Luo JunWei, Li ShuShen, Gong Jian, Wang LinWang, Jiang YL, Tang TA, Huang R. ab initio Simulation on Mono-Layer MoS2 Tunnel FET: Impact of Metal Contact Configuration and Defect Assisted Tunneling. 2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)null. 2016, 486-488, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000478951000134.
[68] Deng, HuiXiong, Luo, JunWei, Li, ShuShen, Wei, SuHuai. Origin of the Distinct Diffusion Behaviors of Cu and Ag in Covalent and Ionic Semiconductors. PHYSICAL REVIEW LETTERS[J]. 2016, 117(16): http://dx.doi.org/10.1103/PhysRevLett.117.165901.
[69] Liu, Yuanyue, Stradins, Paul, Deng, Huixiong, Luo, Junwei, Wei, SuHuai. Suppress carrier recombination by introducing defects: The case of Si solar cell. APPLIED PHYSICS LETTERS[J]. 2016, 108(2): http://ir.semi.ac.cn/handle/172111/27994.
[70] Wang, Jianping, Luo, JunWei, Zhang, Lijun, Zunger, Alex. Reinterpretation of the Expected Electronic Density of States of Semiconductor Nanowires. NANO LETTERS[J]. 2015, 15(1): 88-95, https://www.webofscience.com/wos/woscc/full-record/WOS:000348086100015.
[71] Luo JunWei, Li ShuShen. Semiconductor Materials Genome Initiative: silicon-based light emission material. ACTA PHYSICA SINICA[J]. 2015, 64(20): https://www.webofscience.com/wos/woscc/full-record/WOS:000368822000041.
[72] Xu, Kai, Deng, HuiXiong, Wang, Zhenxing, Huang, Yun, Wang, Feng, Li, ShuShen, Luo, JunWei, He, Jun. Sulfur vacancy activated field effect transistors based on ReS2 nanosheets. NANOSCALE[J]. 2015, 7(38): 15757-15762, http://dx.doi.org/10.1039/c5nr04625d.
[73] Jiang XiangWei, Luo JunWei, Li ShuShen, Wang LinWang, IEEE. How Good is Mono-Layer Transition-Metal Dichalcogenide Tunnel Field-Effect Transistors in sub-10 nm?-An ab initio Simulation Study. 2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)[J]. 2015, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000380472500077.
[74] Luo JunWei, Li ShuShen. Semiconductor Materials Genome Initiative: silicon-based light emission material. ACTA PHYSICA SINICA[J]. 2015, 64(20): https://www.webofscience.com/wos/woscc/full-record/WOS:000368822000041.
[75] Tarasenko, S A, Durnev, M V, Nestoklon, M O, Ivchenko, E L, Luo, JunWei, Zunger, Alex. Split Dirac cones in HgTe/CdTe quantum wells due to symmetry-enforced level anticrossing at interfaces. PHYSICAL REVIEW B[J]. 2015, 91(8): http://ir.semi.ac.cn/handle/172111/26900.
[76] Deng, HuiXiong, Luo, JunWei, Wei, SuHuai. Chemical trends of stability and band alignment of lattice-matched II-VI/III-V semiconductor interfaces. PHYSICAL REVIEW B[J]. 2015, 91(7): http://dx.doi.org/10.1103/PhysRevB.91.075315.
[77] Ye, ZhenYu, Deng, HuiXiong, Wu, HuiZhen, Li, ShuShen, Wei, SuHuai, Luo, JunWei. The origin of electronic band structure anomaly in topological crystalline insulator group-IV tellurides. NPJ COMPUTATIONAL MATERIALS[J]. 2015, 1: https://www.webofscience.com/wos/woscc/full-record/WOS:000427385800001.
[78] Yang, Shuang, Ding, Kun, Dou, Xiuming, Wu, Xuefei, Yu, Ying, Ni, Haiqiao, Niu, Zhichuan, Jiang, Desheng, Li, ShuShen, Luo, JunWei, Sun, Baoquan. Zinc-blende and wurtzite GaAs quantum dots in nanowires studied using hydrostatic pressure. PHYSICAL REVIEW B[J]. 2015, 92(16): http://ir.semi.ac.cn/handle/172111/26837.
[79] Huang, Yun, Deng, HuiXiong, Xu, Kai, Wang, ZhenXing, Wang, QiSheng, Wang, FengMei, Wang, Feng, Zhan, XueYing, Li, ShuShen, Luo, JunWei, He, Jun. Highly sensitive and fast phototransistor based on large size CVD-grown SnS2 nanosheets. NANOSCALE[J]. 2015, 7(33): 14093-14099, http://ir.semi.ac.cn/handle/172111/26896.
[80] Ma, Jie, Deng, HuiXiong, Luo, JunWei, Wei, SuHuai. Origin of the failed ensemble average rule for the band gaps of disordered nonisovalent semiconductor alloys. PHYSICAL REVIEW B[J]. 2014, 90(11): http://dx.doi.org/10.1103/PhysRevB.90.115201.
[81] Zhang, Xiuwen, Liu, Qihang, Luo, JunWei, Freeman, Arthur J, Zunger, Alex. Hidden spin polarization in inversion-symmetric bulk crystals. NATURE PHYSICS[J]. 2014, 10(5): 387-393, https://www.webofscience.com/wos/woscc/full-record/WOS:000335371200018.
[82] Gong, Ming, Hofer, B, Zallo, E, Trotta, R, Luo, JunWei, Schmidt, O G, Zhang, Chuanwei. Statistical properties of exciton fine structure splitting and polarization angles in quantum dot ensembles. PHYSICAL REVIEW B[J]. 2014, 89(20): http://ir.semi.ac.cn/handle/172111/26272.
[83] Fingerhut, Benjamin P, Richter, Marten, Luo, JunWei, Zunger, Alex, Mukamel, Shaul. 2D optical photon echo spectroscopy of a self-assembled quantum dot. ANNALEN DER PHYSIK[J]. 2013, 525(1-2): 31-42, http://dx.doi.org/10.1002/andp.201200204.
[84] Zhang, Lijun, Luo, JunWei, Saraiva, Andre, Koiller, Belita, Zunger, Alex. Genetic design of enhanced valley splitting towards a spin qubit in silicon. NATURE COMMUNICATIONS[J]. 2013, 4: http://dx.doi.org/10.1038/ncomms3396.
[85] Heiss, M, Fontana, Y, Gustafsson, A, Wuest, G, Magen, C, ORegan, D D, Luo, J W, Ketterer, B, ConesaBoj, S, Kuhlmann, A V, Houel, J, RussoAverchi, E, Morante, J R, Cantoni, M, Marzari, N, Arbiol, J, Zunger, A, Warburton, R J, Fontcuberta i Morral, A. Self-assembled quantum dots in a nanowire system for quantum photonics. NATURE MATERIALS[J]. 2013, 12(5): 439-444, http://dx.doi.org/10.1038/NMAT3557.
[86] Cao, Yue, Waugh, J A, Zhang, XW, Luo, JW, Wang, Q, Reber, T J, Mo, S K, Xu, Z, Yang, A, Schneeloch, J, Gu, G D, Brahlek, M, Bansal, N, Oh, S, Zunger, A, Dessau, D S. Mapping the orbital wavefunction of the surface states in three-dimensional topological insulators. NATURE PHYSICS[J]. 2013, 9(8): 499-504, https://www.webofscience.com/wos/woscc/full-record/WOS:000322592000020.
[87] Zhang, Lijun, Lin, Zhibin, Luo, JunWei, Franceschetti, Alberto. The Birth of a Type-II Nanostructure: Carrier Localization and Optical Properties of Isoelectronically Doped CdSe:Te Nanocrystals. ACS NANO[J]. 2012, 6(9): 8325-8334, https://www.webofscience.com/wos/woscc/full-record/WOS:000309040600086.
[88] Fingerhut, Benjamin P, Richter, Marten, Luo, JunWei, Zunger, Alex, Mukamel, Shaul. Dissecting biexciton wave functions of self-assembled quantum dots by double-quantum-coherence optical spectroscopy. PHYSICAL REVIEW B[J]. 2012, 86(23): http://dx.doi.org/10.1103/PhysRevB.86.235303.
[89] Lee, Benjamin G, Hiller, Daniel, Luo, JunWei, Semonin, Octavi E, Beard, Matthew C, Zacharias, Margit, Stradins, Paul. Strained Interface Defects in Silicon Nanocrystals. ADVANCED FUNCTIONAL MATERIALS[J]. 2012, 22(15): 3223-3232, http://dx.doi.org/10.1002/adfm.201200572.
[90] Luo, JunWei, Singh, Ranber, Zunger, Alex, Bester, Gabriel. Influence of the atomic-scale structure on the exciton fine-structure splitting in InGaAs and GaAs quantum dots in a vertical electric field. PHYSICAL REVIEW B[J]. 2012, 86(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000309655000002.
[91] Vidal, Julien, Zhang, Xiuwen, Stevanovic, Vladan, Luo, JunWei, Zunger, Alex. Large insulating gap in topological insulators induced by negative spin-orbit splitting. PHYSICAL REVIEW B[J]. 2012, 86(7): https://www.webofscience.com/wos/woscc/full-record/WOS:000308003400001.
[92] Zhang, Lijun, dAvezac, Mayeul, Luo, JunWei, Zunger, Alex. Genomic Design of Strong Direct-Gap Optical Transition in Si/Ge Core/Multishell Nanowires. NANO LETTERS[J]. 2012, 12(2): 984-991, https://www.webofscience.com/wos/woscc/full-record/WOS:000299967800076.
[93] dAvezac, Mayeul, Luo, JunWei, Chanier, Thomas, Zunger, Alex. Genetic-Algorithm Discovery of a Direct-Gap and Optically Allowed Superstructure from Indirect-Gap Si and Ge Semiconductors. PHYSICALREVIEWLETTERS[J]. 2012, 108(2): https://www.webofscience.com/wos/woscc/full-record/WOS:000299127700006.
[94] Luo, JunWei, Stradins, Paul, Zunger, Alex. Matrix-embedded silicon quantum dots for photovoltaic applications: a theoretical study of critical factors. ENERGY & ENVIRONMENTAL SCIENCE[J]. 2011, 4(7): 2546-2557, https://www.webofscience.com/wos/woscc/full-record/WOS:000292205100025.
[95] Vidal, J, Zhang, X, Yu, L, Luo, J W, Zunger, A. False-positive and false-negative assignments of topological insulators in density functional theory and hybrids. PHYSICAL REVIEW B[J]. 2011, 84(4): http://dx.doi.org/10.1103/PhysRevB.84.041109.
[96] Zhang, Lijun, Luo, JunWei, Franceschetti, Alberto, Zunger, Alex. Excitons and excitonic fine structures in Si nanowires: Prediction of an electronic state crossover with diameter changes. PHYSICAL REVIEW B[J]. 2011, 84(7): https://www.webofscience.com/wos/woscc/full-record/WOS:000412130700012.
[97] Luo, JunWei, Zunger, Alex. Geometry of epitaxial GaAs/(Al,Ga)As quantum dots as seen by excitonic spectroscopy. PHYSICAL REVIEW B[J]. 2011, 84(23): https://www.webofscience.com/wos/woscc/full-record/WOS:000298560100003.
[98] Luo, JunWei, Zhang, Lijun, Zunger, Alex. Absence of intrinsic spin splitting in one-dimensional quantum wires of tetrahedral semiconductors. PHYSICAL REVIEW B[J]. 2011, 84(12): https://www.webofscience.com/wos/woscc/full-record/WOS:000294777800001.
[99] Luo, JunWei, Chantis, Athanasios N, van Schilfgaarde, Mark, Bester, Gabriel, Zunger, Alex. Discovery of a Novel Linear-in-k Spin Splitting for Holes in the 2D GaAs/AlAs System. PHYSICAL REVIEW LETTERS[J]. 2010, 104(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000274445100034.
[100] Zhang, Lijun, Luo, JunWei, Zunger, Alex, Akopian, Nika, Zwiller, Val, Harmand, JeanChristophe. Wide InP Nanowires with Wurtzite/Zincblende Superlattice Segments Are Type-II whereas Narrower Nanowires Become Type-I: An Atomistic Pseudopotential Calculation. NANO LETTERS[J]. 2010, 10(10): 4055-4060, https://www.webofscience.com/wos/woscc/full-record/WOS:000282727600043.
[101] Luo, JunWei, Zunger, Alex. Design Principles and Coupling Mechanisms in the 2D Quantum Well Topological Insulator HgTe/CdTe. PHYSICAL REVIEW LETTERS[J]. 2010, 105(17): https://www.webofscience.com/wos/woscc/full-record/WOS:000283298000008.
[102] Luo, JunWei, Bester, Gabriel, Zunger, Alex. Atomistic pseudopotential calculations of thickness-fluctuation GaAs quantum dots. PHYSICAL REVIEW B[J]. 2009, 79(12): https://www.webofscience.com/wos/woscc/full-record/WOS:000264769300080.
[103] Franceschetti, A, Luo, J W, An, J M, Zunger, A. Origin of one-photon and two-photon optical transitions in PbSe nanocrystals. PHYSICAL REVIEW B[J]. 2009, 79(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000267699700024.
[104] Jiang, XiangWei, Deng, HuiXiong, Li, ShuShen, Luo, JunWei, Wang, LinWang. Quantum mechanical simulation of nanosized metal-oxide-semiconductor field-effect transistor using empirical pseudopotentials: A comparison for charge density occupation methods. JOURNAL OF APPLIED PHYSICS[J]. 2009, 106(8): http://ir.semi.ac.cn/handle/172111/7555.
[105] Luo, JunWei, Franceschetti, Alberto, Zunger, Alex. Direct-Bandgap InAs Quantum-Dots Have Long-Range Electron-Hole Exchange whereas Indirect Gap Si Dots Have Short-Range Exchange. NANO LETTERS[J]. 2009, 9(7): 2648-2653, https://www.webofscience.com/wos/woscc/full-record/WOS:000268138600025.
[106] Luo, J W, Franceschetti, A, Zunger, A. Nonmonotonic size dependence of the dark/bright exciton splitting in GaAs nanocrystals. PHYSICAL REVIEW B[J]. 2009, 79(20): https://www.webofscience.com/wos/woscc/full-record/WOS:000266501500012.
[107] Luo, JunWei, Bester, Gabriel, Zunger, Alex. Full-Zone Spin Splitting for Electrons and Holes in Bulk GaAs and GaSb. PHYSICAL REVIEW LETTERS[J]. 2009, 102(5): https://www.webofscience.com/wos/woscc/full-record/WOS:000263166400044.
[108] Luo, JunWei, Franceschetti, Alberto, Zunger, Alex. Carrier Multiplication in Semiconductor Nanocrystals: Theoretical Screening of Candidate Materials Based on Band-Structure Effects. NANO LETTERS[J]. 2008, 8(10): 3174-3181, https://www.webofscience.com/wos/woscc/full-record/WOS:000259906800019.
[109] Jiang, XiangWei, Deng, HuiXiong, Luo, JunWei, Li, ShuShen, Wang, LinWang. A fully three-dimensional atomistic quantum mechanical study on random dopant-induced effects in 25-nm MOSFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2008, 55(7): 1720-1726, http://ir.semi.ac.cn/handle/172111/6582.
[110] Zhang, XiuWen, Xu, Qiang, Fan, WeiJun, Luo, JunWei, Li, ShuShen, Xia, JianBai. Rashba spin splitting of the minibands of coupled InAs/GaAs pyramid quantum dots. APPLIED PHYSICS LETTERS[J]. 2008, 92(14): http://ir.semi.ac.cn/handle/172111/6742.
[111] Luo, JunWei, Franceschetti, Alberto, Zunger, Alex. Quantum-size-induced electronic transitions in quantum dots: Indirect band-gap GaAs. PHYSICAL REVIEW B[J]. 2008, 78(3): https://www.webofscience.com/wos/woscc/full-record/WOS:000258190300082.
[112] Deng, HuiXiong, Jiang, XiangWei, Luo, JunWei, Li, ShuShen, Xia, JianBai, Wang, LinWang. Multiple valley couplings in nanometer Si metal-oxide-semiconductor field-effect transistors. JOURNAL OF APPLIED PHYSICS[J]. 2008, 103(12): http://ir.semi.ac.cn/handle/172111/6580.
[113] Xu, Qiang, Luo, JunWei, Li, ShuShen, Xia, JianBai, Li, Jingbo, Wei, SuHuai. Chemical trends of defect formation in Si quantum dots: The case of group-III and group-V dopants. PHYSICAL REVIEW B[J]. 2007, 75(23): http://ir.semi.ac.cn/handle/172111/9366.
[114] Luo, JunWei, Li, ShuShen, Xia, JianBai, Wang, LinWang. Quantum mechanical effects in nanometer field effect transistors. APPLIED PHYSICS LETTERS[J]. 2007, 90(14): http://ir.semi.ac.cn/handle/172111/9548.
[115] Luo, JW, Li, SS, Xia, JB, Wang, LW. Comparative study for colloidal quantum dot conduction band state calculations. APPLIED PHYSICS LETTERS[J]. 2006, 88(14): http://ir.semi.ac.cn/handle/172111/10744.
[116] Luo, JW, Li, SS, Xia, JB, Wang, LW. Photoluminescence pressure coefficients of InAs/GaAs quantum dots. PHYSICAL REVIEW B[J]. 2005, 71(24): http://ir.semi.ac.cn/handle/172111/8650.
[117] Gong, Ming, Hofer, B., Zallo, E., Trotta, R., Luo, Junwei, Zunger, Alex, Schmidt, O. G., Zhang, Chuanwei. Statistical Properties of Exciton Fine Structure Splittings and Polarization Angles in Quantum Dot Ensembles. http://arxiv.org/abs/1306.5000.
[118] Luo, Jun-Wei, Bester, Gabriel, Zunger, Alex. Supercoupling between heavy-hole and light-hole states in self-assembled quantum dots. http://arxiv.org/abs/1411.6187.
[119] Yuan, Linding, Liu, Qihang, Zhang, Xiuwen, Luo, Jun-Wei, Li, Shu-Shen, Zunger, Alex. Uncovering and tailoring hidden Rashba spin-orbit splitting in centrosymmetric crystals. http://arxiv.org/abs/1812.09823.

科研活动

   
科研项目
(1) 量子点中重空穴-轻空穴耦合和发光极化各向异性机制和量子调控,主持,国家级,2015-01--2018-12
(2) 青年****,主持,国家级,2015-01--2017-12
参与会议
(1) Theoretical insight into Silicon quantum dots for solar cell applications,2014-09,Jun-Wei Luo
(2) Theoretical insight into Si quantum dots for solar cell applications,2014-08,Jun-Wei Luo
(3) Discovery of supercoupling for heavy-hole and light-hole mixing in self-assembled quantumdots,2014-08,Jun-Wei Luo, Gabriel Bester, Alex Zunger
(4) Inverse Design of Si Nanomaterials for Optoelectronic Applications,2013-09,Jun-Wei Luo

合作情况

  • 美国科罗拉多大学Boulder分校的Alex Zunger教授;
  • 劳伦斯伯克利的Lin-Wang Wang教授;
  • 美国可再生能源国家实验室Shu-huai Wei教授;
  • 北卡大学夏洛特分校的张勇教授;
  • 德国汉堡大学的Gabriel Bester教授