General

Jun Shao, Prof. Dr.rer.nat.
Shanghai Institute of Technical Physics
Email: jshao@mail.sitp.ac.cn
Telephone: +86-21-2505-1860, 1826
Address: Yutian Road 500
Postcode: 200083 


He studied in Nanjing University for his first and second university degrees. He was then selected as Chinese doctoral student in Physics by German Scientists, Profs. Gottfried Landwehr and Manfred Pilkuhn from a group of candidates, and obtained his PhD degree (Dr. rer. nat.) in the University of Stuttgart, Germany, with the advice of Prof. Manfred Pilkuhn. He is now the head of the Infrared Photoluminescence Spectroscopy Group in the National Laboratory for Infrared Physics, Chinese Academy of Sciences.

He had proposed and formalized a novel photoreflectance (PR) technique based on a step-scan Fourier transform infrared (FTIR) spectrometer, and pushed successfully for the first time the functional range from about 4 µm to the long-wave infrared of up to 20 µm. He had realized a rapid and high signal-to-noise ratio modulated photoluminescence (PL) technique using a step-scan FTIR spectrometer. Benefited from the breakthrough of the infrared PR and PL techniques, he and his group had conducted effective infrared modulation spectroscopic and magneto-optical studies of narrow-gap and low-dimensional semiconductors. In the recent years, he had authored and co-authored some 30 research articles in the journals of Review of Scientific Instruments, Physical Review B, Applied Physics Letters, and Journal of Applied Physics, and presented invited talks in several international conferences.



He was awarded with the Program of Shanghai Subject Chief Scientist, appointed to Editorial Board of Review of Scientific Instruments, and is ad hoc referee for about 10 peered reviewed journals including Journal of Applied Physics, Journal of Electronic Materials, Solid State Communication, and Solid State Sciences. He was principal investigator of many projects sponsored by the National Natural Science Foundation, the Chinese Academy of Sciences, and the Science and Technology Commission of Shanghai Municipality. 

His recent research interests are FTIR spectrometer-based novel spectroscopic techniques and optical and magneto-optical investigation of narrow-gap and/or low-dimensional semiconductors.

Research Areas

Infrared physics and semiconductor physics

Photoluminescence spectroscopy, especially in mid- and far-infrared

Modulation spectroscopy, from visible to far-infrared

Magneto-optical spectroscopy, also in long-wave infrared of up to 20 microns

Education

1996-2002  Dr.rer.nat.  (German system, PhD equivalent) in Physics, Universitaet Stuttgart, Germany
- Topic of Dissertation (PhD thesis): Effective Mass and Valence-band Structure in GaxIn1-xAs/InP and GaxIn1-xP/AlGaInP Quantum Wells, 2002
- Diplomarbeit (Master thesis equivalent): Optical and magnetooptical study of ZnTe:Ti3+, 2001
- Supervisors: Prof. Dr.rer.nat. M. H. Pilkuhn and PD Dr.rer.nat. A. Dornen

1994-1996  PhD candidate in Acoustics, University of Nanjing, China
- Supervisor: Prof. J. Z. Sha

1986-1989  Master in Acoustics, University of Nanjing, China
- Master Thesis: Modulation-Transfer-Function method for estimating speech intelligibility in communications, 1989
- Supervisor: Prof. G. R. Sun

1982-1986  Bachelor of Science, University of Nanjing, China

Experience

2002 – present, leader of the Infrared Photoluminescence Spectroscopy Group in the National Lab for Infrared Physics, Chinese Academy of Sciences, Shanghai, China 

1999 – 2002, research assistant (Hilfwissenschaftler) at the 4. Physikalisches Institut, Universitaet Stuttgart, Germany 

1989 – 1994, lecturer at Huaihai Institute of Technology, Jiangsu, China

Honors & Distinctions

Editorial Board, Review of Scientific Instruments, American Institute of Physics, 2010-2012
 
Outstanding and exceptional referees for 2010, Review of Scientific Instruments

2008 - 2010, awarded by Program of Shanghai Subject Chief Scientist ,  Science and Technology Commission of Shanghai Municipality, Shanghai, China

1996 - 1999, awarded a Scholarship by the Volkswagen-Foundation, Germany, selected from a group of candidates by German Scientists, Prof. Dr. Landwehr, and Prof. Dr. Pilkuhn, et al.

Publications

   
Representative Papers

  1. J. Shao*, W. Lu, X. Lu, F. Yue, Z. Li, S. Guo, and J. Chu, Modulated photoluminescence spectroscopy with a step-scan Fourier transform infrared spectrometer, Rev. Sci. Instrum. 77，063104 (2006).
  2. J. Shao*, W. Lu, F. Yue, X. Lu, W. Huang, Z. Li, S. Guo, and J. Chu, Photoreflectance spectroscopy with a step-scan Fourier transform infrared spectrometer: technique and applications, Rev. Sci. Instrum. 78, 013111 (2007).
  3. J. Shao*, L. Chen, W. Lu, X. Lu, L. Zhu, S. Guo, L. He, and J. Chu, Backside-illuminated infrared photoluminescence and photoreflectance: Probe of vertical nonuniformity of HgCdTe on GaAs, Appl. Phys. Lett. 96, 121915 (2010).
  4. J. Shao*, L. Chen, X. Lu, W. Lu, L. He, S. Guo, and J. Chu, Realization of photoreflectance spectroscopy in very-long wave infrared of up to 20mm, Appl. Phys. Lett. 95, 041908 (2009).
  5. J. Shao*, L. Ma, X. Lu, W. Lu, J. Wu, F. Zha, Y. Wei, Z. Li, S. Guo, J. Yang, L. He, and J. Chu, Evolution of infrared photoreflectance lineshape with temperature in narrow-gap HgCdTe epilayers, Appl. Phys. Lett. 93, 131914 (2008).
  6. J. Shao*, W. Lu, M. Sadeghi, X. Lu, S. M. Wang, L. Ma, and A. Larsson, Evolution of valence-band alignment with nitrogen content in GaNAs/GaAs single quantum wells, Appl. Phys. Lett. 93, 031904 (2008).
  7. J. Shao*, X. Lu, W. Lu, F. Yue, W. Huang, N. Li, J. Wu, L. He, and J. Chu, Cutoff wavelength of HgCdTe epilayers by infrared photoreflectance spectroscopy, Appl. Phys. Lett. 90, 171101 (2007).
  8. J. Shao*, F. Yue, X. Lu, W. Lu, W. Huang, Z. Li, S. Guo, and J. Chu, Photomodulated infrared spectroscopy by a step-scan Fourier transform infrared spectrometer, Appl. Phys. Lett. 89, 182121 (2006).
  9. J. Shao*, X. Lu, S. Guo, W. Lu, L. Chen, Y. Wei, J. Yang, L. He, and J. Chu, Impurity levels and bandedge electronic structure in as-grown arsenic-doped HgCdTe by infrared photoreflectance spectroscopy, Phys. Rev. B 80, 155125 (2009).
  10. J. Shao*, R. Winterhoff, A. Dornen, E. Baars, and J. Chu, Ordering effects on optical transitions in GaInAs/AlGaInP quantum welld studied by photoluminescence and reflectivity spectroscopy, Phys. Rev. B 68, 165327 (2003).
  11. J. Shao*, A. Dornen, R. Winterhoff, and F. Scholz, Ordering parameter and band-offset determination for ordered GaInP/AlGaInP quantum wells, Phys. Rev. B 66, 035109 (2002).
  12. J. Shao*, Z. Qi, H. Zhao, L. Zhu, Y. Song, X. Chen, F. Zha, S. Guo, and S. Wang, Photoluminescence probing of interface evolution with annealing in InGa(N)As/GaAs single quantum wells, J. Appl. Phys. 118, 165305 (2015).
  13. J. Shao*, W. Lu, G. Tsen, S. Guo, and J. Dell, Mechanisms of infrared photoluminescence in HgTe/HgCdTe superlattice, J. Appl. Phys. 112, 063512 (2012).
  14. J. Shao*, L. Chen, F. Zha, W. Lu, X. Lu, S. Guo, L. He, and J. Chu, Modulation mechanism of infrared photoreflectance in narrow-gap HgCdTe epilayers: A pump power dependent study, J. Appl. Phys. 108, 023518 (2010).
  15. J. Shao*, X. Lu, F. Yue, W. Huang, S. Guo, and J. Chu, Magnetophotoluminescence study of GaxIn1−xP quantum wells with CuPt-type long-range ordering, J. Appl. Phys. 100, 053522 (2006).
  16. J. Shao*, A. Dornen, E. Baars, V. Harle, F. Scholz, S. Guo and Junhao Chu, Forbidden transitions and the effective masses of electrons and holes in InGaAs/InP Quantum wells and compressive strain, J. Appl. Phys. 93, 951 (2003).
  17. J. Shao, A. Dornen, E. Baars, X. Wang, and J. Chu, Photoluminescence and absorption identification of Ti3+ in zinc telluride, Semicond. Sci. Technol. 17, 1213 (2002).
  18. J. Shao, A. Dornen, R. Winterhoff, and F. Scholz, Effective mass and exciton binding energy in ordered (Al)GaInP quantum wells evaluated by derivative of reflectivity, J. Appl. Phys. 91, 2553 (2002).
  19. J. Shao, D. Haase, A. Dornen*, V. Harle, and F. Scholz, Tensile strained InGaAs/InP multiple-quantum-well structures studied by magneto-optical spectroscopy, J. Appl. Phys. 87, 4303 (2000).
  20. J. Shao, J. Sha, and Z. Zhang, The method of the minimum sum of squared acoustic pressures in an actively controlled noise barrier, J. Sound Vib. 204, 381 (1997).
  21. X．Chen, Z. Xu, Y. Zhou, L. Zhu, J. Chen, and J. Shao*, Evaluating interface roughness and microfluctuation potential of InAs/GaSb superlattices by mid-infrared magneto- photoluminescence, Appl. Phys. Lett. 117, 081104 (2020).
  22. X. Chen, L. Zhu, and J. Shao*, Spatially resolved and two-dimensional mapping modulated infrared photoluminescence spectroscopy with functional wavelength up to 20mmm, Rev. Sci. Instrum. 90, 093106 (2019).
  23. B. Yan, X. Chen, L. Zhu, W. Pan, L. Wang, L. Yue, X. Zhang, L. Han, F. Liu, S. Wang, and J. Shao*, Bismuth-induced band-tail states in GaAsBi probed by photoluminescence, Appl. Phys. Lett. 114, 052104 (2019).
  24. X. Chen, Q. Zhuang*, H. Alradhi, Z. Jin, L. Zhu, X. Chen, and J. Shao*, Midinfrared Photoluminescence up to 290 K Reveals Radiative Mechanisms and Substrate Doping-Type Effects of InAs Nanowires, Nano Lett. 17, 1545 (2017).
  25. X. Chen, X. Wu, L. Yue, L. Zhu, W. Pan, Z. Qi, S. Wang, and J. Shao*, Negative thermal quenching of below-bandgap photoluminescence in InPBi, Appl. Phys. Lett. 110, 051903 (2017).
  26. Q. Zhuang*, H. Alradhi, Z. Jin, X. Chen, J. Shao*, X. Chen, A. Sanchez, Y. Cao, J. Liu, P. Yates, K. Durose, and C. Jin, Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics, Nanotechnol. 28, 105710 (2017).
  27. X. Chen, J. Xing, L. Zhu, F Zha, Z. Niu, S. Guo, and J. Shao*, GaInSb/InAs/AlSb quantum wells with InSb- and GaAs-like interfaces investigated by temperature- and magnetic field-dependent photoluminescence, J. Appl. Phys. 119, 175301 (2016).
  28. L. Zhu*, J. Shao*, X. Chen, Y. Li, L. Zhu, Z. Qi, T. Lin, W. Bai, X. Tang, and J. Chu, Photoinduced magnetization effect in a p-type HgMnTe single crystal investigated by infrared photoluminescence, Phys. Rev. B 94, 155201 (2016).
  29. X. Chen, J. Jung, Z. Qi, L. Zhu, S. Park, L. Zhu, E. Yoon, and J. Shao*, Infrared photoreflectance investigation of resonant levels and band edge structure in InSb, Opt. Lett. 40, 5295 (2015).
  30. L. Zhu*, J. Shao*, L. Zhu, X. Chen, Z. Q, T. Lin, W. Bai, X. Tang, and J. Chu, Influence of local magnetization on acceptor-bound complex state in Hg1−xMnxTe single crystals, J. Appl. Phys. 118, 045707 (2015).
  31. X. Chen, Y. Zhou, L. Zhu, Z. Qi, Q. Xu, Z. Xu, S. Guo, J. Chen, L. He, and J. Shao*, Evolution of interfacial properties with annealing in InAs/GaSb superlattice probed by infrared photoluminescence, Jpn. J. Appl. Phys. 53, 082201 (2014).
  32. X. Chen, Y. Song, L. Zhu, S. Wang, W. Lu, S. Guo, and J. Shao*, Shallow-terrace-like interface in dilute-bismuth GaSb/AlGaSb single quantum wells evidenced by photoluminescence, J. Appl. Phys. 113, 153505 (2013).
  33. L. Zhu, J. Shao*, T. Lin, X. Lu, J. Zhu, X. Tang, and J. Chu, Photoionization absorption and zero-field spin splitting of acceptor-bound magnetic polaron in p-type Hg1-xMnxTe single crystals, J. Appl. Phys. 111, 083502 (2012).
  34. X. Zhang, J. Shao*, L. Chen, X. Lu, S. Guo, L. He, and J. Chu, Infrared photoluminescence of arsenic-doped HgCdTe in a wide temperature range of up to 290 K, J. Appl. Phys. 110, 043503 (2011).
  35. L. Zhu, J. Shao*, X. Lu, S. Guo, and J. Chu, Competition of compressive strain with substrate misorientation in CuPt-type ordered GaInP/AlGaInP quantum wells, J. Appl. Phys. 109, 013509 (2011).
  36. F. Zha*, J. Shao*, J. Jiang, and W. Yang, Blueshift in photoluminescence and photovoltaic spectroscopy of the ion-milling formed n-on-p HgCdTe photodiodes, Appl. Phys. Lett. 90, 201112 (2007).
  37. F. Yue, J. Shao*, X. Lu, J. Wu, W. Huang, X. Lin, L. He, and J. Chu*, Anomalous temperature dependence of absorption edge in narrow-gap HgCdTe semiconductors, Appl. Phys. Lett. 89, 021912 (2006).
  38.  
  39. F. Zha, F. Hong, B. Pan, Y. Wang, J. Shao, X. Shen, Atomic resolution on the (111)B surface of mercury cadmium telluride by scanning tunneling microscopy, Phys. Rev. B 97, 035401 (2018).
  40. Z. Deng, B. Chen, X. Chen, J. Shao, Q. Gong, H. Liu, and J. Wu, Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate, Infrared Phys.Technol. 90, 115 (2018).
  41. W. Pan, L. Zhang, L. Zhu, Y. Li, X. Chen, X. Wu, F. Zhang, J. Shao, and S. Wang, Optical properties and band bending of InGaAs/GaAsBi/InGaAs type-II quantum well grown by gas source molecular beam epitaxy, J. Appl. Phys. 120, 105702 (2016).
  42. X. Wu, X. Chen, W. Pan, P. Wang, L. Zhang, Y. Li, H. Wang, K. Wang, J. Shao, and S. Wang, Anomalous photoluminescence in InP1−xBix, Sci. Rep. 6, 27867 (2016).
  43. E. Anyebe, A. Sanchez, S. Hindmarsh, X. Chen, J. Shao, M. Rajpalke, T. Veal, B. Robinson, O. Kolosov, F. Anderson, R. Sundaram, Z. Wang, V. Falko, and Q. Zhuang, Realization of Vertically Aligned, Ultrahigh Aspect Ratio InAsSb Nanowires on Graphite, Nano Lett. 15, 4348 (2015).
  44. F. Shao, F. Zha, C. Pan, J. Shao, X. Zhao, and X. Shen, Scanning tunneling spectroscopy of single-wall carbon nanotubes on a polymerized gold substrate, Phys. Rev. B 89, 085423 (2014).
  45. F. Zha, M. Li, J. Shao, Q. Wang, X. Ren, K. An, X. Zhao, and X. Shen, Implication of exotic topography depths of surface nanopits in scanning tunneling microscopy of HgCdTe, Appl. Phys. Lett. 101, 141604 (2012).
  46. J. Huang, W. Ma, Y. Wei, Y. Zhang, K. Cui, Y. Cao, X. Guo, and J. Shao, How to Use Type II InAs/GaSb Superlattice Structure to Reach Detection Wavelength of 2-3mm, IEEE J. Quant. Electron. 48, 1322 (2012).
  47. Y. Zhang, W. Ma, Y. Cao, J. Huang, Y. Wei, K. Cui, and J. Shao, Long Wavelength infrared InAs/GaSb superlattice photodetectors with InSb-like and mixed interfaces, IEEE J. Quant. Electron. 47, 1475 (2011).
  48. X. Xiong, W. Sun, Y. Bao, M. Wang, R. Peng, C. Sun, X. Lu, J. Shao, Z. Li, and N. Ming, Construction of a chiral metamaterial with a U-shaped resonator assembly, Phys. Rev. B 81, 075119 (2010).
  49. F. Zha, M. Li, J. Shao, W. Yin, S. Zhou, X. Lu, Q. Guo, Z. Ye, T. Li, H. Ma, B. Zhang, and X. Shen, Femtosecond laser-drilling-induced HgCdTe photodiodes, Opt. Lett. 35, 971 (2010).
  50. J. Zhang, J. Zhai, J. Wang, J. Shao, X. Lu, and X. Yao, Infrared dielectric response and Raman spectra of tunable Ba0.5Sr0.5TiO3-Mg2TiO4 composite ceramics, J. Appl. Phys. 107, 014106 (2010).
  51. X. Xiong, W. Sun, Y. Bao, R. Peng, M. Wang, C. Sun, X. Lu, J. Shao, Z. Li, and N. Ming, Switching the electric and magnetic responses in a metamaterial, Phys. Rev. B 80, 201105(R) (2009).
  52. J．Zhang, J. Zhai, X. Chou, J. Shao, X. Lu and X. Yao, Microwave and infrared dielectric response of tunable Ba1−xSrxTiO3 ceramics, Acta Mater. 57, 4491 (2009).
  53. Y. Bao, R. Peng, D. Shu, M. Wang, X. Lu, J. Shao, W. Lu, and N. Ming, Role of Interference between Localized and Propagating Surface Waves on the Extraordinary Optical Transmission Through a Subwavelength-Aperture Array, Phys. Rev. Lett. 101, 087401 (2008).
  54. F. Zha, S. Zhou, H. Ma, F. Yin, B. Zhang, T. Li, J. Shao, and X. Shen, Laser drilling induced electrical type inversion in vacancy-doped p-type HgCdTe, Appl. Phys. Lett. 93, 151113 (2008).
  55. W. Ma, X. Yang, M. Chong, T. Yang, L. Chen, J. Shao, X. Lu, W. Lu, C. Song, and H. C. Liu, Voltage tunable two-color 
  56. Y. Bao, H. Li, X. Chen, R. Peng, M. Wang, X. Lu, J. Shao, and N. Ming, Tailoring the resonances of surface plasmas on fractal-featured metal film by adjusting aperture configuration, Appl. Phys. Lett. 92, 151902 (2008).
  57. Y. Bao, B. Zhang, Z. Wu, J. Si, M. Wang, R. Peng, X. Lu, J. Shao, Z. Li, X. Hao, and N. Ming, Surface-plasmon-enhanced transmission through metallic film perforated with fractal-featured aperture array, Appl. Phys. Lett. 90, 251914 (2007).
  58. L. Ma, Y. Zhou, N. Jiang, X. Lu, J. Shao, W. Lu, J. Ge, X. Ding, and X. Hou, Wide-band “black silicon” based on porous silicon, Appl. Phys. Lett. 88, 171907 (2006).
  59. Y. Ji, G. Chen, N. Tang, Q. Wang, X. Wang, J. Shao, X. Chen, and W. Lu, Proton-implantation induced photoluminescence enhancement in self-assembled InAs/GaAs quantum dots, Appl. Phys. Lett. 82, 2802 (2003).


Patents
  1. Jun Shao, W. Lu, X. Lu, F. Yue, Z. Li, S. Guo, and J. Chu, Step-scan based photomodulation spectroscopic technique and instrumentation, Chinese Patent of Invention, ZL 200610023427.9
  2. Jun Shao, W. Lu, X. Lu, F. Yue, S. Guo, Z. Li, and J. Chu, Step-scan based infrared photoluminescence spectroscopic technique and instrumentation, Chinese Patent of Invention, ZL 200610023133.6
  3. Jun Shao, W. Lu, F. Yue, X. Lu, Z. Li, S. Guo, and J, Chu, 600-700 nm FTIR-PL technique and instrumentation, Chinese Patent of Invention, ZL 200610023426.4
  4. Jun Shao, X. Lu, W. Lu, S. Guo, and J. Chu, An infrared modulated PL technique and apparatus, for Chinese Patent of Invention, 200910046995.4

Research Interests

FTIR spectrometer-based novel spectroscopic techniques, e.g., PL, PR, PT; 

Optical and magneto-optical investigation of narrow-gap and/or low-dimensional semiconductors, e.g., HgCdTe, HgTe/CdTe SL’s, InAs/GaSb T2SL’s, InGa(N)As/GaAs QWs.

Conferences

  1. Jun Shao, W. Lu, X. Lu, S. Guo, J. Chu, L. Chen, J. Wu, and L. He, “Arsenic-doped narrow-gap HgCdTe epilayers studied by modulation spectroscopy”, 7th International Conference on Thin Film Physics and Applications (TFPA 2010), Shanghai, China, Sept. 24-27, 2010 [Invited talk]. 
  2. Jun Shao and Wei Lu, “Photoreflectance spectroscopy with a Fourier-transform infrared spectrometer: from visible to far infrared”, 35th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2010), Rome, Italy, Sept. 5-10, 2010 [Keynote Presentation]. 
  3. Jun Shao and Xiang Lu, “Application of infrared photoreflectance to low-dimensional semiconductors: demonstration and warning”, 8th International Symposium on Advanced Photonic Science and Technology, Seoul, Korea, Aug. 1-4, 2010 [Invited Paper]. 
  4. Jun Shao, X. Lu, W. Lu, and J. Chu, “Photoreflectance spectroscopy with a Fourier-transform infrared spectrometer: technique and applications”, 6th International Symposium on Advanced Photonic Science and Technology, Seoul, Korea, Aug. 25-29, 2008 [Invited Paper].