主要研究领域包括：红外光谱技术与系统、固体光谱学与半导体材料器件物理

提出并实现步进扫描傅里叶变换(FT)光调制反射(PR)光谱方法，突破40多年来国际上一直存在的约4 微米以长波段禁区并成功拓展到20微米红外探测波段，建成可见－远红外PR光谱系统；发展红外调制光致发光(PL)光谱方法，建成多变条件集成红外调制PL光谱实验系统，使得关键性能得到数量级提高；发展非接触无损预测材料光电响应截止波长以及纵向不均匀性方法，揭示关于掺杂窄禁带半导体光调制的新机理，发现掺杂HgCdTe禁带附近PR光谱特征群及其浅杂质相关性，澄清关于带边PR特征机制的长期争论，获得器件设计必需却一直未能形成的带边电子能带结构图像。

2022年度拟招收硕士、博士研究生共6名。

080903-微电子学与固体电子学
070207-光学
070205-凝聚态物理

红外光电子物理, 半导体外延结构物理学,半导体材料器件物理, 半导体低维结构与量子调控
固体光谱学及新方法，干涉测量与光谱技术
半导体材料与器件物理

研究组以红外光谱仪器、半导体尤其是窄禁带半导体与低维结构半导体材料与器件为研究对象，以红外调制反射（PR）光谱与红外光致发光（PL）光谱技术与应用研究为优势特色，同时兼具宽波段低变温吸收光谱、反射光谱、光电响应谱研究能力，以及基于傅里叶变换红外光谱仪的新型光谱方法/实验系统研究能力。

研究生培养以多变条件集成红外调制PL光谱、宽波段红外PR光谱研究平台为依托（具体介绍请见下文），围绕课题组所承担国家973、国家自然科学基金、中科院科研装备研制、上海市重点基础研究等项目，通过导师知识/技能传授与研究生自我探索/学习，实现对专业知识技能、独立科研能力、严谨治学作风、团队协作意识的全面历练。 

热忱欢迎有志于红外光电子物理、半导体低维结构材料与器件物理、固态光谱学、干涉测量与光谱技术研究的同学加入我们团队，在与我们一起探索未知世界的同时实现自我的全面提升。 


一、变条件集成红外调制光致发光谱实验系统 

光致发光(Photoluminescence, PL)光谱广泛应用于宽禁带半导体光学性质与物理过程研究，极大增进对材料、物理的认识。在红外波段，由于室温背景辐射的强压制效应，弱PL 信号无法可靠检测。为此，上世纪八十年代国际上发展了基于快速扫描傅立叶变换红外(Fourier Transform Infrared, FTIR)光谱仪的双调制PL 光谱方法。但是受制于机理性难题，适用波段、谱分辨率、信噪比等仍受很大局限。

我们研究组在国家自然科学基金仪器专款和面上等项目资助下，提出将波长扫描便于施加外部调制与时间扫描具备多通道全通量优势相结合来实施红外调制PL光谱测量的新途径[邵军 等, ZL 200610023133.6; ZL 200610023426.4]，基于步进扫描FTIR光谱仪，突破国际上传统双调制PL光谱技术所存在机理性局限，解决妨碍变条件红外PL光谱测量的诸多限制，成功研制出可变温度、可变激发的实用化宽波段红外调制光致发光谱实验系统[Jun Shao et al, Rev. Sci. Instrum. 77, 063104 (2006); Appl. Phys. Lett. 96, 121915 (2010); J. Appl. Phys. 112, 063512 (2012); J. Appl. Phys. 118, 163505 (2015)]，被认为“对红外光谱物理学科发展和红外探测工程应用具有重要的意义”。实验系统可靠覆盖红外物理学研究和红外探测技术发展中极为重要的(~400-20,000nm)中、远红外波段(实测典型光谱如图1所示)，同时兼具谱分辨率和信噪比高、抗干扰能力强、测试耗时短的技术优势。

 

图1、宽波段红外调制光致发光谱实验系统实测典型光谱

实验系统在碲镉汞、锑化物等重要红外光电子材料器件机理应用研究中取得成效[J. Appl. Phys. 110, 043503 (2011); J. Appl. Phys. 113, 153505 (2013); J. Appl. Phys. 118, 045707 (2015); Phys. Rev. B 94, 155201 (2016); Appl. Phys. Lett. 110, 051903 (2017); Nano Lett. 17, 1545 (2017); Appl. Phys. Lett. 114, 052104 (2019); Appl. Phys. Lett. 117, 081104 (2020)]。例如：用于InAs/GaSb二类超晶格结构红外探测器机理分析，揭示界面互混演化机制；用于激光诱导HgCdTe光二极管红外探测器机理研究，发现HgCdTe超晶格近带边PL跃迁机制，证明变温PL光谱是窄禁带半导体不均匀性分析有效手段；分析GaInP长程有序对PL特性的影响,提出PL跃迁新机理；揭示GaSbBi量子阱界面台阶结构及光电特征。

实验系统也为其它单位如中科院半导体所、中科院微系统所、长春理工大学的红外物理研究提供了独特红外调制PL光谱实验支持，并与德国、瑞典、韩国、澳大利亚等国同行开展合作研究。


二、宽波段红外光调制反射光谱实验系统 

光调制反射(Photoreflectance, PR)光谱作为有效的光谱检测手段,广泛应用于紫外/可见/近红外波段半导体材料、微结构和器件的光电性质研究。传统PR光谱测试系统由泵浦激光、探测光、单色仪以及相敏探测单元构成，通过调制泵浦激光对样品加以周期性微扰，使样品内建电场产生微小变化，通过测量该变化，即可获得相应的物理微分光谱信息。但是，传统技术存在两方面局限：易受泵浦激光和光致发光干扰、难用于约5微米以长红外波段。

我们研究组在中科院科研装备研制和上海市科委基础研究重点等项目资助下，提出基于步进扫描傅立叶变换红外(ssFTIR)光谱仪实施红外PR光谱测量的新途径[邵军 等, ZL 200610023427.9]，克服红外波段可用宽带连续光源弱、检测器探测能力低等困难，消除泵浦光和光致发光干扰，可靠突破PR光谱技术应用的5微米长波局限并首次拓展到近20微米的远红外波段，成功研制出可见－中远红外（0.5-20微米）宽波段红外PR光谱实验系统[Jun Shao et al,  Appl. Phys. Lett. 89, 182121 (2006); Rev. Sci. Instrum. 78, 013111 (2007); Appl. Phys. Lett. 90, 171101 (2007)]，被认为“是对光调制反射光谱适用范围的重大突破”。实验系统有效覆盖中、远红外波段(实测典型光谱如图2所示)，兼具谱分辨率和信噪比高、抗干扰能力强、测试耗时短技术优势。

图2、宽波段红外PR光谱实验系统实测典型光谱

实验系统在碲镉汞、稀氮化合物等重要红外光电子材料器件机理应用研究中取得初步成效[Jun Shao et al,  Appl. Phys. Lett. 93, 031904 (2008); Appl. Phys. Lett. 93, 131914 (2008); Appl. Phys. Lett. 95, 041908 (2009); Phys. Rev. B 80, 155125 (2009); J. Appl. Phys. 108, 023518 (2010)]。例如，用于传统窄禁带半导体HgCdTe电子能带结构和掺杂特性分析并取得对瓶颈性难题的突破性进展：发现带边浅杂质能级分布规律，测定砷施主/受主、汞空位、碲反位等能级位置；发展非接触预测光电响应截止波长方法，阐明禁带能量经验公式物理实质；建立红外调制光谱的光调制机理模型；提出非接触无损检测外延材料纵向不均匀性有效途径。

实验系统技术引发美国、加拿大、波兰等国同行兴趣与效仿，也使得实验室成为国际上第一个能够报道出红外PR 光谱新方法及其应用研究结果的实验室。

1996-10--2002-01   德国斯图加特大学   科研助理/自然科学博士
1996-06--1996-09   德国曼海姆歌德学院   德语培训
1994-09--1996-05   南京大学   博士研究生
1986-09--1989-06   南京大学   硕士研究生/硕士
1982-09--1986-07   南京大学   本科生/学士

固体光谱学导论
固体光谱学

   

（1） 中国科学院高级技术支撑人才, , 院级, 2011
（2） 上海市优秀学科带头人计划, , 省级, 2008
（3） 中科院-德国大众基金会联合培养物理学博士计划, , 其他, 1996

（ 1 ） 磁光光致发光光调制反射和光调制透射光谱联合测试系统, 发明专利, 2020, 第 1 作者, 专利号: CN201810598278.1

（ 2 ） 用于非接触检测半导体衬底温度的拉曼光谱方法和装置, 发明专利, 2020, 第 1 作者, 专利号: CN201911093693.2

（ 3 ） 消除大气吸收干扰的红外光致发光光路系统和实验方法, 发明专利, 2017, 第 1 作者, 专利号: CN201611055866.8

（ 4 ） 二维分辨扫描成像红外调制光致发光光谱测试装置及方法, 发明专利, 2016, 第 1 作者, 专利号: ZL 201410120925.X

（ 5 ） 红外调制光致发光二维成像光路自动定位校准装置, 发明专利, 2016, 第 1 作者, 专利号: ZL 201410403406.4

（ 6 ） 快速检测II型红外超晶格界面质量的光谱方法和装置, 发明专利, 2013, 第 1 作者, 专利号: ZL 201310039046.X

（ 7 ） 一种基于光调制热发射谱测量材料热导率的方法和装置, 发明专利, 2011, 第 1 作者, 专利号: ZL 201110063630.X

（ 8 ） 一种测量半导体纳米结构光电性能的设备和方法, 发明专利, 2010, 第 4 作者, 专利号: ZL 2005101114778

（ 9 ） 一种红外光调制光致发光谱的测量方法和装置, 发明专利, 2009, 第 1 作者, 专利号: ZL 200910046995.4

（ 10 ） 基于步进扫描的光调制反射光谱方法及装置, 发明专利, 2009, 第 1 作者, 专利号: ZL 200610023427.9

（ 11 ） 600-700nm波段傅立叶变换光致发光谱方法及装置, 发明专利, 2009, 第 1 作者, 专利号: ZL 200610023426.4

（ 12 ） 基于步进扫描的红外调制光致发光谱的方法及装置, 发明专利, 2008, 第 1 作者, 专利号: ZL 200610023133.6

2022年上海科普教育创新奖 科普贡献（个人）二等奖

   

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[18] Deng, Zhuo, Chen, Baile, Chen, Xiren, Shao, Jun, Gong, Qian, Liu, Huiyun, Wu, Jiang. Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate. INFRARED PHYSICS & TECHNOLOGY[J]. 2018, 90: 115-121, http://dx.doi.org/10.1016/j.infrared.2018.03.004.
[19] Ji, Xianghai, Chen, Xiren, Yang, Xiaoguang, Zhang, Xingwang, Shao, Jun, Yang, Tao. Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core-Shell Nanowires. NANOSCALE RESEARCH LETTERS[J]. 2018, 13(1): http://dx.doi.org/10.1186/s11671-018-2690-3.
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[92] Shao, J, Dornen, A, Winterhoff, R, Scholz, F. Effective mass and exciton binding energy in ordered (Al)GaInP quantum wells evaluated by derivative of reflectivity. JOURNAL OF APPLIED PHYSICS[J]. 2002, 91(4): 2553-2555, [93] Shao, J, Dornen, A, Winterhoff, R, Scholz, F. Ordering parameter and band-offset determination for ordered GaxIn1-xP/(Al0.66Ga0.34)(y)In1-yP quantum wells. PHYSICAL REVIEW B[J]. 2002, 66(3): https://www.webofscience.com/wos/woscc/full-record/WOS:000177338500042.
[94] Shao, J, Dornen, A, Baars, E, Wang, XG, Chu, JH. Photoluminescence and absorption identification of Ti3+ in zinc telluride. SEMICONDUCTOR SCIENCE AND TECHNOLOGY[J]. 2002, 17(12): 1213-1217, https://www.webofscience.com/wos/woscc/full-record/WOS:000180018700002.
[95] Shao, J, Haase, D, Dornen, A, Harle, V, Scholz, F. Tensile strained InGaAs/InP multiple-quantum-well structures studied by magneto-optical spectroscopy. JOURNAL OF APPLIED PHYSICS[J]. 2000, 87(9): 4303-4307, https://www.webofscience.com/wos/woscc/full-record/WOS:000086724100040.
[96] Shao, J, Sha, JZ, Zhang, ZL. The method of the minimum sum of squared acoustic pressures in an actively controlled noise barrier. JOURNAL OF SOUND AND VIBRATION[J]. 1997, 204(2): 381-385, http://dx.doi.org/10.1006/jsvi.1997.0909.

   

（ 1 ） InAs/GaSb超晶格红外探测材料的调制光谱研究（国家基金）, 负责人, 国家任务, 2012-01--2015-12
（ 2 ） 稀铋量子阱界面效应与能带结构的调制光谱研究(国家基金), 负责人, 国家任务, 2013-01--2016-12
（ 3 ） 稀铋稀氮中红外材料与器件物理, 负责人, 国家任务, 2014-01--2018-08
（ 4 ） 二维空间分辨与扫描成像红外光致发光谱实验系统, 负责人, 中国科学院计划, 2014-01--2017-12
（ 5 ） InAs/GaSb超晶格纳米材料均匀性调制 光谱方法与调控机理, 负责人, 地方任务, 2016-07--2019-06
（ 6 ） HgCdTe面阵探测器材料均匀性的调制光致发光谱方法与机理, 负责人, 国家任务, 2017-01--2020-12
（ 7 ） GaNAS/GaAs量子阱激子界面效应的磁光调制光谱研究, 负责人, 国家任务, 2020-01--2023-12
（ 8 ） 红外调制微区光致发光光谱实验系统, 负责人, 地方任务, 2020-10--2023-09

（1）Infrared photoreflectance of HgTe/HgCdTe superlattices   第十九届全国凝聚态光学性质学术会议   邵军,朱亮清,陈熙仁   2018-07-25
（2）Infrared modulation spectroscopy of narrow-gap semiconductors (invited)   第十二屆海峡两岸三地光电子学研讨会   邵军,陈熙仁,朱亮清,吕翔,陆卫,褚君浩   2018-05-02
（3）Photoluminescence and Photoreflectance Spectroscopy in Infrared of up to Terahertz (keynote)   Jun Shao, Wei Lu, Xiren Chen, and Junhao Chu   2018-04-23
（4）中、长波红外砷掺杂碲镉汞退火激活的光致发光谱分析   第21 届全国半导体物理学术会议   2017-07-19
（5）光致发光谱分析InGa(N)As/GaAs单量子阱界面退火演化   第二十届全国半导体物理学术会议   2015-07-16
（6）InAs/GaSb 超晶格界面能级与能带结构的红外调制光谱分析   第十九届全国半导体物理学术会议   2013-07-16
（7）Arsenic-doped narrow-gap HgCdTe epilayers studied by modulation spectroscopy   7th International Conference on Thin Film Physics and Applications (TFPA 2010)   Jun Shao, W. Lu, X. Lu, S. Guo, J. Chu, L. Chen, J. Wu, and L. He   2010-09-24
（8）Photoreflectance spectroscopy with a Fourier-transform infrared spectrometer: from visible to far infrared   35th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2010)   Jun Shao and Wei Lu   2010-09-05
（9）Application of infrared photoreflectance to low-dimensional semiconductors: demonstration and warning   8th International Symposium on Advanced Photonic Science and Technology   Jun Shao and Xiang Lu   2010-08-01
（10）Photoreflectance spectroscopy with a Fourier-transform infrared spectrometer: technique and applications   6th International Symposium on Advanced Photonic Science and Technology   Jun Shao, X. Lu, W. Lu, and J. Chu   2008-08-25

美国“科学仪器评论”编委（Editorial Board, Review of Scientific Instruments, AIP, 2010-2012）

Outstanding and exceptional referees for 2010, Review of Scientific Instruments

J. Appl. Phys., J. Electron. Matter., Solid State Commun., Solid State Sci. 等近10种SCI期刊审稿人