III-V族材料的外延生长及其光电器件研究，III-Nitrides的MOCVD生长及其器件研究，其他新型光电器件的研究。其中外延生长主要涉及到MOCVD及MBE等大型设备；器件制作主要涉及到微纳加工设备及工艺。

已协助培养毕业博士生3名，每年拟招收1-2名硕博连读生。博士研究生的选题主要偏重于半导体方向的应用基础研究及应用研究。同时欢迎有相关研究背景的博士毕业生来组做博士后！！！学生就业前景较好！！！

070205-凝聚态物理

化合物半导体材料外延生长及器件制作

2009-09--2014-07   中国科学院物理研究所   博士学位
2005-09--2009-07   北京交通大学   理学学士

   

2018-08~现在, 中国科学院物理研究所, 副研究员
2016-03~2018-05,耶鲁大学, 博士后
2014-07~2016-03,中国科学院微电子研究所, 助理研究员

   

（ 1 ） GeSi合金基板的制备方法及其产品和应用, 发明专利, 2021, 第 3 作者, 专利号: CN113529159A

（ 2 ） 外延GeSi量子点的方法, 发明专利, 2020, 第 3 作者, 专利号: CN111834206A

   

（1） Opto-electrical and polarization performance of a mesa-structured InGaAs PIN detector integrated with subwavelength aluminum gratings, Optics Letters, 2022, 通讯作者
（2） Enhancement of light extraction efficiency of AlGaInP-based light emitting diodes by silicon oxide hemisphere array, OPTICS COMMUNICATIONS, 2021, 第 6 作者
（3） Stripping GaN/InGaN epitaxial films and fabricating vertical GaN-based light-emitting diodes, VACUUM, 2021, 第 4 作者
（4） Enhanced light extraction from AlGaInP-based red light- emitting diodes with photonic crystals, OPTICS EXPRESS, 2021, 第 4 作者
（5） 量子阱带间跃迁探测器基础研究（特邀）, Fundamental researches on the quantum well interband transition detector(Invited), 红外与激光工程, 2021, 第 6 作者
（6） Origin of anomalous enhancement of the absorption coefficient in a PN junction, Origin of anomalous enhancement of the absorption coefficient in a PN junction*, CHINESE PHYSICS B, 2021, 第 6 作者
（7） Effect of H2 treatment in barrier on interface, optical and electrical properties of InGaN light emitting diodes, SUPERLATTICES AND MICROSTRUCTURES, 2020, 第 5 作者
（8） Luminescence study in InGaAs/AlGaAs multi-quantum-well light emitting diode with p-n junction engineering, JOURNAL OF APPLIED PHYSICS, 2020, 第 5 作者
（9） Fabrication, structural and optical properties of a virtual GeSi template by Ge filling the porous Si prepared by EC etching, JAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 通讯作者
（10） Electrically Transduced Gas Sensors Based on Semiconducting Metal Oxide Nanowires, SENSORS, 2020, 通讯作者
（11） Research on photo-generated carriers escape in PIN and NIN structures with quantum wells, APPLIEDPHYSICSEXPRESS, 2020, 第 5 作者
（12） The influence of excessive H-2 during barrier growth on InGaN light-emitting diodes, MATERIALS RESEARCH EXPRESS, 2020, 第 6 作者
（13） Characterization of edge dislocation density through X-ray diffraction rocking curves, JOURNAL OF CRYSTAL GROWTH, 2020, 第 5 作者
（14） Hybrid nano-scale Au with ITO structure for a high-performance near-infrared silicon-based photodetector with ultralow dark current, Hybrid nano-scale Au with ITO structure for a high-performance near-infrared silicon-based photodetector with ultralow dark current, PHOTONICS RESEARCH, 2020, 第 2 作者
（15） Electro-photoluminescence study in InGaAs/AlGaAs multi-quantum-wells, EPL, 2020, 第 5 作者
（16） Effect of Dopant Concentration in a Base Layer on Photocurrent–Voltage Characteristics of Photovoltaic Power Converters, Effect of Dopant Concentration in a Base Layer on Photocurrent-Voltage Characteristics of Photovoltaic Power Converters*, CHINESE PHYSICS LETTERS, 2020, 第 5 作者
（17） Surface Morphology Improvement of Non-Polar a-Plane Ga N Using a Low-Temperature GaN Insertion Layer, Surface Morphology Improvement of Non-Polar a-Plane GaN Using a Low-Temperature GaN Insertion Layer, CHINESE PHYSICS LETTERS, 2020, 第 8 作者
（18） Characteristics of AlGaN/GaN high electron mobility transistors on metallic substrate, CHINESE PHYSICS B, 2020, 第 5 作者
（19） Photoluminescence characteristics of InGaP/GaAs dual-junction solar cells under current mismatch conditions, APPLIED PHYSICS EXPRESS, 2019, 第 5 作者
（20） Reduction in crystalline quality anisotropy for non-polar a-plane GaN directly grown on titanium patterned sapphire substrate, APPLIED PHYSICS EXPRESS, 2019, 第 7 作者
（21） The substantial dislocation reduction by preferentially passivating etched defect pits in gan epitaxial growth, APPLIED PHYSICS EXPRESS, 2019, 第 8 作者
（22） Improved crystal quality of non-polar a-plane GaN epi-layers directly grown on optimized hole-array patterned r-sapphire substrates, CRYSTENGCOMM, 2019, 第 8 作者
（23） Visualizing carrier transitions between localization states in a InGaN yellow-green light-emitting-diode structure, JOURNAL OF APPLIED PHYSICS, 2019, 第 2 作者
（24） Characterization and optimization of AlN nucleation layer for nonpolar a-plane GaN grown on r-plane sapphire substrate, SUPERLATTICES AND MICROSTRUCTURES, 2019, 第 7 作者
（25） Absorption Enhancement of Silicon Solar Cell in a Positive-Intrinsic-Negative Junction, CHINESE PHYSICS LETTERS, 2019, 第 2 作者
（26） Characterization of periodicity fluctuations in ingan/gan mqws by the kinematical simulation of x-ray diffraction, APPLIED PHYSICS EXPRESS, 2019, 第 4 作者
（27） Fabrication of large-scale uniform submicron inverted pyramid pit arrays on silicon substrates by laser interference lithography, VACUUM, 2019, 通讯作者
（28） Investigations of atomic configurations of 60 degrees basal dislocations in wurtzite GaN film by high-resolution transmission electron microscopy, PHILOSOPHICAL MAGAZINE LETTERS, 2016, 第 3 作者
（29） Efficiency enhancement of InGaN/GaN multiple quantum wells with graphene layer, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2015, 第 1 作者
（30） Investigation of temperature-dependent photoluminescence in multi-quantum wells, SCIENTIFIC REPORTS, 2015, 第 5 作者
（31） A study of 2DEG properties in AlGaN/GaN heterostructure using GaN/AlN superlattice as barrier layers grown by MOCVD, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2015, 第 3 作者
（32） Realization of high-luminous-efficiency InGaN light-emitting diodes in the "green gap" range, SCIENTIFIC REPORTS, 2015, 第 4 作者
（33） Improvement on InGaN-based light emitting diodes using p-GaN layer grown at low temperature in full N-2 environment, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2014, 第 1 作者
（34） Indium segregation measured in InGaN quantum well layer, SCIENTIFIC REPORTS, 2014, 第 1 作者
（35） GaN Films Grown on Si (111) Substrates Using a Composite Buffer with Low Temperature AlN Interlayer, CHINESE PHYSICS LETTERS, 2014, 第 3 作者
（36） Improved Photoluminescence in InGaN/GaN Strained Quantum Wells, CHINESE PHYSICS LETTERS, 2014, 第 6 作者
（37） The Influence of Graded AlGaN Buffer Thickness for Crack-Free GaN on Si(111) Substrates by using MOCVD, CHINESE PHYSICS LETTERS, 2013, 第 4 作者
（38） Analyses of 2-DEG characteristics in GaN HEMT with AlN, NANOSCALE RESEARCH LETTERS, 2012, 第 6 作者
（39） Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD, NANOSCALERESEARCHLETTERS, 2012, 第 6 作者

   

（ 1 ） 垂直结构GaN晶体管再生长界面调控及其物理特性研究, 负责人, 国家任务, 2021-01--2023-12
（ 2 ） 中国科学院青年创新促进会, 负责人, 中国科学院计划, 2021-01--2024-12
（ 3 ） 中国科学院物理所**II类, 负责人, 研究所自主部署, 2018-08--2021-08
（ 4 ） 三五族材料分子束外延生长技术平台, 参与, 中国科学院计划, 2022-01--2023-12