基本信息
习凯  男  硕导  中国科学院微电子研究所
电子邮件: xikai@ime.ac.cn
通信地址: 北京市朝阳区北土城西路3号
邮政编码: 100029

招生信息

   
招生专业
080903-微电子学与固体电子学
080902-电路与系统
085400-电子信息
招生方向
空间辐射效应,可靠性,存储器,存储模组与系统,计算机模拟

教育背景

2013-09--2016-07   中国科学院大学   博士学位
2010-09--2013-07   中国科学院大学   硕士学位

工作经历

   
工作简历
2019-06~现在, 中国科学院微电子研究所, 副研究员
2016-07~2019-04,中国科学院微电子研究所, 博士后
2013-09~2016-07,中国科学院大学, 博士学位
2010-09~2013-07,中国科学院大学, 硕士学位

教授课程

TCAD仿真技术

专利与奖励

   
专利成果
( 1 ) 一种射频开关器件、射频电路及电子设备, 2021, 第 4 作者, 专利号: CN113363382A

( 2 ) 一种霍尔传感器及其制备和测试方法, 2021, 第 3 作者, 专利号: CN112540329A

( 3 ) 一种磁场探测方法及装置, 2021, 第 3 作者, 专利号: CN112420917A

( 4 ) 一种绝缘体上半导体结构及其抗总剂量辐照加固方法, 2020, 第 4 作者, 专利号: CN112086516A

( 5 ) 非易失霍尔传感器及其制造方法、测试方法, 2020, 第 4 作者, 专利号: CN111416035A

( 6 ) 一种基于RRAM的非易失性锁存器及集成电路, 2020, 第 4 作者, 专利号: CN210956168U

( 7 ) 改良的电荷俘获型存储器, 2020, 第 3 作者, 专利号: CN110783343A

( 8 ) 一种闪存存储器的抗总剂量辐照加固方法, 2019, 第 6 作者, 专利号: CN109213620A

( 9 ) 一种闪存存储电路的抗总剂量辐照加固方法, 2019, 第 6 作者, 专利号: CN109215715A

( 10 ) 离子敏感场效应晶体管及其制备方法, 2019, 第 3 作者, 专利号: CN109211897A

( 11 ) 检测装置及方法, 2019, 第 3 作者, 专利号: CN109212001A

( 12 ) 一种闪存存储电路的抗总剂量效应加固方法, 2019, 第 6 作者, 专利号: CN109119110A

( 13 ) 离子敏感场效应晶体管及其制备方法, 2017, 第 3 作者, 专利号: CN103940884B

出版信息

   
发表论文
(1) γ射线辐照柔性基底石墨烯霍尔传感器的总剂量效应, Total Dose Effects of Flexible Graphene-Based Hall Sensors Irradiated byγ-Ray, 现代应用物理, 2022, 第 3 作者
(2) The effects of proton radiation on aluminum oxide/zirconium-doped hafnium oxide stacked ferroelectric tunneling junctions, APPLIED PHYSICS EXPRESS, 2021, 第 4 作者
(3) Analysis of Single Event Effects in Capacitor-Less 1T-DRAM Based on an InGaAs Transistor, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 第 2 作者
(4) Simulations of single event effects in 6T2C-based ferroelectric non-volatile static random access memory, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 第 5 作者
(5) Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design, Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design, SCIENCE CHINA-INFORMATION SCIENCES, 2021, 第 5 作者
(6) Numerical simulation of vertical tunnelling field-effect transistors charge-trapping memory with TCAD tools, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 第 5 作者
(7) Au ion-induced atomic migration behavior in an HfO2/Si stack, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2020, 第 10 作者
(8) 纳米级静态随机存取存储器的α粒子软错误机理研究, Mechanisms of alpha particle induced soft errors in nanoscale static random access memories, 物理学报, 2020, 第 5 作者
(9) Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations, SENSORS, 2020, 第 3 作者
(10) Mechanisms of alpha particle induced soft errors in nanoscale static random access memories, ACTA PHYSICA SINICA, 2020, 第 5 作者
(11) Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor, IEEE ACCESS, 2020, 第 4 作者
(12) Hf0.5Zr0.5O2-based ferroelectric bionic electronic synapse device with highly symmetrical and linearity weight modification, ELECTRONICSLETTERS, 2020, 第 4 作者
(13) Performance Optimization of FD-SOI Hall Sensors Via 3D TCAD Simulations, SENSORS, 2020, 第 3 作者
(14) PBTI stress-induced 1/f noise in n-channel FinFET, PBTI stress-induced 1/f noise in n-channel FinFET*, CHINESE PHYSICS B, 2020, 第 3 作者
(15) 14nm FinFET和65nm平面工艺静态随机存取存储器中子单粒子翻转对比, Comparison of neutron induced single event upsets in 14 nm FinFET and 65 nm planar static random access memory devices, 物理学报, 2020, 第 7 作者
(16) Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors, Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors, SCIENCE CHINA-INFORMATION SCIENCES, 2020, 第 4 作者
(17) Comparison of neutron induced single event upsets in 14 nm FinFET and 65 nm planar static random access memory devices, ACTA PHYSICA SINICA, 2020, 第 7 作者
(18) Total ionization dose effects of N-type tunnel field effect transistor (TFET) with ultra-shallow pocket junction, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2020, 第 1 作者
(19) Cryogenic characterisation of 55 nm SONOS charge-trapping memory in AC and DC modes, ELECTRONICS LETTERS, 2020, 第 4 作者
(20) Total ionizing dose effects of gamma and X-rays on 55 nm silicon-oxide-nitride-oxide-silicon single flash memory cell, ACTA PHYSICA SINICA, 2019, 第 2 作者
(21) Tibetan-Plateau-Based Real-Time Testing and Simulations of Single-Bit and Multiple-Cell Upsets in QDRII plus SRAM Devices, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 第 5 作者
(22) The total ionizing dose effects of X-ray irradiation on graphene/Si Schottky diodes with a HfO2 insertion layer, MICROELECTRONICS RELIABILITY, 2019, 第 4 作者
(23) Total ionizing dose effects on graphene-based charge-trapping memory, SCIENCE CHINA INFORMATION SCIENCES,, 2019, 第 1 作者
(24) Study of -ray radiation influence on SiO2/HfO2/Al2O3/HfO2/Al2O3 memory capacitor by C-V and DLTS, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 通讯作者
(25) The effects of gamma-ray irradiation on graphene/n-Si Schottky diodes, APPLIED PHYSICS EXPRESS, 2019, 第 3 作者
(26) 55 nm硅-氧化硅-氮化硅-氧化硅-硅闪存单元的γ射线和X射线电离总剂量效应研究, Total ionizing dose effects of γ and X-rays on 55 nm silicon-oxide-nitride-oxide-silicon single flash memory cell, 物理学报, 2019, 第 2 作者
(27) Total ionizing dose effects on graphene-based charge-trapping memory, Total ionizing dose effects on graphene-based charge-trapping memory, SCIENCE CHINA. INFORMATION SCIENCE, 2019, 第 1 作者
(28) Heavy Ion Radiation Effects on a 130-nm COTS NVSRAM Under Different Measurement Conditions, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 第 3 作者
(29) Total Ionizing Dose Effects of 55-nm Silicon-Oxide-Nitride-Oxide-Silicon Charge Trapping Memory in Pulse and DC Modes, CHINESE PHYSICS LETTERS, 2018, 第 5 作者
(30) Total Ionization Dose Effects on Charge Storage Capability of Al2O3/HfO2/Al2O3-Based Charge Trapping Memory Cell, Total Ionization Dose Effects on Charge Storage Capability of Al2O3/HfO2/Al2O3-Based Charge Trapping Memory Cell, CHINESE PHYSICS LETTERS, 2018, 第 5 作者
(31) Total ionizing dose and single event effects of 1 Mb HfO2-based resistive-random-access memory, MICROELECTRONICS RELIABILITY, 2018, 第 3 作者
(32) Total Ionizing Dose Effects of 55-nm Silicon-Oxide-Nitride-Oxide-Silicon Charge Trapping Memory in Pulse and DC Modes, Total Ionizing Dose Effects of 55-nm Silicon-Oxide-Nitride-Oxide-Silicon Charge Trapping Memory in Pulse and DC Modes, 中国物理快报:英文版, 2018, 第 5 作者
(33) Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory, Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory, 中国物理B:英文版, 2018, 第 2 作者
(34) 重离子辐照带有ECC的65 nm SRAM器件“伪多位翻转”特性研究, Radiation-Induced "Fake MBU" by Heavy Ion in 65 nm SRAM with ECC, 原子核物理评论, 2018, 第 4 作者
(35) The Impacts of Heavy Ion Energy on Single Event Upsets in SOI SRAMs, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 第 6 作者
(36) Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory, CHINESE PHYSICS B, 2018, 第 2 作者
(37) Pulsed-Laser Testing for Single Event Effects in a Stand-Alone Resistive Random Access Memory, IPFA, 2017, 第 1 作者
(38) Total ionizing dose effects and annealing behaviors of HfO_2-based MOS capacitor, Total ionizing dose effects and annealing behaviors of HfO_2-based MOS capacitor, 中国科学:信息科学(英文版), 2017, 第 4 作者
(39) Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor, SCIENCE CHINA, 2017, 第 3 作者
(40) Radiation Effects on 1 Mb HfO2-based Resistive Memory, 2017 17TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS), 2017, 第 4 作者
(41) Total Ionization Dose Effects on Charge Trapping Memory(CTM)with Al2O3/HfO2/Al2O3 Trilayer Structure, NSREC 2017, 2017, 第 3 作者
(42) Single-Event-Effects Induced by Heavy Ion and Pulsed Laser on 16Mb Magneto-resistive Random Access Memory, 2017 International Workshop on Reliability of Micro- and Nano- Electronic Devices in Harsh Environment, 2017, 第 5 作者
(43) Radiation Effects on 1 Mb HfO2-based Resistive Memory, RADECS 2017, 2017, 第 6 作者
(44) Total ionizing dose effects and annealing behaviors of HfO_2-based MOS capacitor, SCIENCE CHINA-INFORMATION SCIENCES, 2017, 第 4 作者
(45) Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor, SCIENCE CHINA-INFORMATION SCIENCES, 2017, 第 4 作者
(46) SENSITIVITY OF PROTON SINGLE EVENT EFFECT SIMULATION TOOL TO VARIATION OF INPUT PARAMETERS, 2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2016, 通讯作者

科研活动

   
科研项目
( 1 ) 基于RRAM异构存储系统的软硬件协同设计方法研究, 负责人, 国家任务, 2021-01--2023-12
( 2 ) 二元金属氧化物RRAM单元辐射效应研究, 负责人, 国家任务, 2018-01--2020-12
( 3 ) 半导体器件中子单粒子效应计算机模拟及验证技术研究, 负责人, 地方任务, 2019-01--2021-12
( 4 ) 重离子辐照对RRAM单元导电细丝稳定性影响研究, 负责人, 研究所自主部署, 2020-07--2021-12