080903-微电子学与固体电子学
080903-微电子学与固体电子学
080903-微电子学与固体电子学

III-V族半导体材料和器件, 短红外和中红外光电二极管和激光二极管
高速，高功率光电二极管
宽禁带半导体材料

2009-05--2013-05   弗吉尼亚大学   博士
2007-08--2009-05   弗吉尼亚大学   硕士学位
2003-09--2007-07   中国科学技术大学   学士学位

   

2013-02~2016-01,Qorvo Inc, 射频产品研发工程师
2009-05~2013-05,弗吉尼亚大学, 博士
2007-08~2009-05,弗吉尼亚大学, 硕士学位
2003-09~2007-07,中国科学技术大学, 学士学位

半导体器件与材料基础
半导体器件物理
光电器件

   

（1） Direct growth of InAs/GaSb type II superlattice photodiodes on silicon substrates, IET Optoelectronics, 2018, 第 10 作者
（2） Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate, Infrared Physics & Technology, 2018, 通讯作者
（3） Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-well Mid-wave Infrared Photodetectors Grown on Silicon Substrate, IEEE Journal of Lightwave Technology, 2018, 通讯作者
（4） Sub-monolayer quantum dot quantum cascade mid-infrared photodetector, Applied Physics Letters, 2017, 通讯作者
（5） Optical gain analysis of GaAs-based InGaAs/GaAsSbBi type-II quantum wells lasers, Optics Express, 2017, 第 1 作者
（6） Active Region Design and Gain Characteristics of InP-Based Dilute Bismide Type-II Quantum Wells for Mid-IR Lasers, IEEE Transactions on Electron Devices, 2017, 第 1 作者
（7） InP-based short-wave infrared and midwave infrared photodiodes using a novel type-II strain-compensated quantum well absorption region, Optics Letters, 2013, 第 1 作者
（8） Carrier Dynamics Study of InP-based PIN Photodiodes with InGaAs/GaAsSb Type-II Quantum Wells, J. Phys. D: Appl. Phys, 2013, 第 1 作者
（9） Dark Current Modeling of InP based SWIR and MWIR InGaAs/GaAsSb Type-II MQW Photodiodes, Optical and Quantum Electronics, 2013, 第 1 作者
（10） Natural Lithography Nano-sphere Texturing as Antireflective Layer on InGaAs PIN Photodiodes, IEEE Electronics Letters, 2012, 第 1 作者
（11） SWIR/MWIR InP-based PIN Photodiodes with InGaAs/GaAsSb Type-II Quantum Wells, IEEE QUANTUM ELECTRONICS, 2011, 第 1 作者
（12） Demonstration of a Room Temperature InP-based Photodetector Operating beyond 3 μm, IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 第 1 作者

   

（ 1 ） 碲镉汞雪崩光电二极管的蒙特卡洛模拟, 负责人, 研究所自主部署, 2017-05--2019-04
（ 2 ） 磷化铟衬底上短波红外双色探测器, 负责人, 地方任务, 2017-06--2020-05

（1）Characterization and Impact of Traps in Lattice-Matched and Strain-Compensated In1-xGaxAs/GaAs1-ySby Multiple Quantum Well Photodiodes   Wenjie Chen, Baile Chen, J. Yuan, A. Holmes, and P. Fay   2012-06-19
（2）Modeling of the type-II InGaAs/GaAsSb quantum well designs for mid-infrared laser diodes by k·p method   Baile Chen, A. L. Holmes Jr, Viktor Khalfin, Igor Kudryashov, Bora. M. Onat   2012-04-24
（3）Quantum Efficiency Modeling of PIN Photodiodes with InGaAs/GaAsSb Quantum Wells Absorption Region   Baile Chen, Wenlu Sun, Joe C. Campbell and A. L. Holmes Jr.   2011-10-10
（4）Design of Strain Compensated InGaAs/GaAsSb Type-II Quantum Well Structures for Mid-infrared Photodiodes   Baile Chen, A. L. Holmes Jr, W.Y. Jiang, Jinrong Yuan   2011-09-05