基本信息
刘智  男  硕导  中国科学院半导体研究所
电子邮件: zhiliu@semi.ac.cn
通信地址: 北京市海淀区清华东路甲35号
邮政编码:

招生信息

   
招生专业
080903-微电子学与固体电子学
招生方向
硅基光电子学

教育背景

2009-09--2014-06   中国科学院半导体研究所   博士
2005-09--2009-06   太原理工大学   学士

工作经历

   
工作简历
2020-09~现在, 中国科学院半导体研究所, 副研究员
2018-01~2020-08,中国科学院半导体研究所, 项目副研究员
2014-07~2017-12,中国科学院半导体研究所, 助理研究员
2009-09~2014-06,中国科学院半导体研究所, 博士
2005-09~2009-06,太原理工大学, 学士

专利与奖励

   
专利成果
( 1 ) 一种钙钛矿薄膜的制备方法及钙钛矿LED, 2021, 第 5 作者, 专利号: CN113066947A

( 2 ) 增强紫外波段响应度的硅雪崩光电二极管及其制备方法, 2021, 第 5 作者, 专利号: CN112864268A

( 3 ) GeSn/钙钛矿异质结宽光谱探测器及其制作方法, 2021, 第 4 作者, 专利号: CN112670366A

( 4 ) 钙钛矿太阳电池PN结及其制备方法, 2021, 第 4 作者, 专利号: CN112397650A

( 5 ) 非对称三波导结构的偏振分束器及其制备方法, 2021, 第 2 作者, 专利号: CN110780381B

( 6 ) 背接触式钙钛矿发光二极管, 2021, 第 5 作者, 专利号: CN110085756B

( 7 ) 集成加热型锗波导热光调制器结构及其制备方法, 2020, 第 3 作者, 专利号: CN112099246A

( 8 ) 一种波导耦合的硅基光电探测器及其制备方法, 2020, 第 1 作者, 专利号: CN112038441A

( 9 ) 一种波导耦合的光电探测器及其制备方法, 2020, 第 1 作者, 专利号: CN111952399A

( 10 ) 一种硅基电吸收调制器及其制备方法, 2020, 第 1 作者, 专利号: CN108828797B

( 11 ) 背靠背双吸收硅基光电探测器及制备方法, 2020, 第 2 作者, 专利号: CN108447940B

( 12 ) 一种横向结构锗/硅异质结雪崩光电探测器及其制备方法, 2019, 第 2 作者, 专利号: CN107068784B

( 13 ) 用于碳基钙钛矿太阳能电池的介孔碳电极及其制备方法, 2019, 第 5 作者, 专利号: CN109671849A

( 14 ) 硅基横向注入激光器及其制备方法, 2019, 第 1 作者, 专利号: CN106229813B

( 15 ) 硅基宽光谱探测器及制备方法, 2016, 第 1 作者, 专利号: CN105405916A

( 16 ) 具有亚波长光栅结构的面入射硅基锗光电探测器及其制备方法, 2015, 第 1 作者, 专利号: CN105070779A

( 17 ) 大失配体系硅基无位错异质外延方法, 2015, 第 3 作者, 专利号: CN104377279A

( 18 ) 硅基锗激光器及其制备方法, 2013, 第 1 作者, 专利号: CN103427332A

出版信息

   
发表论文
(1) Brightness and Lifetime Improved Light-Emitting Diodes from Sr-Doped Quasi-Two-Dimensional Perovskite Layers, TSINGHUA SCIENCE AND TECHNOLOGY, 2023, 第 6 作者
(2) High Speed Broadband Hybrid Perovskite Nanocrystals /Ge Photodetector from UV to NIR., Advanced Optical Materials, 2023, 第11作者
(3) 75 GHz germanium waveguide photodetector with 64 Gbps data rates utilizing an inductive-gain-peaking technique, 75 GHz germanium waveguide photodetector with 64 Gbps data rates utilizing an inductive-gain-peaking technique, 半导体学报:英文版, 2023, 第 3 作者
(4) Growth and characterization of GePb/Ge multiple quantum wells, Journal of Alloys and Compounds, 2023, 第 7 作者
(5) Investigation on n-Type (-201) beta-Ga2O3 Ohmic Contact via Si Ion Implantation, TSINGHUA SCIENCE AND TECHNOLOGY, 2023, 第 4 作者
(6) Sn composition graded GeSn photodetectors on Si substrate with cutoff wavelength of 3.3 um for mid-infrared Si photonics, APPLIED PHYSICS LETTERS, 2022, 第 7 作者
(7) Sn content gradient GeSn with strain controlled for high performance GeSn mid-infrared photodetectors, Sn content gradient GeSn with strain controlled for high performance GeSn mid-infrared photodetectors, PHOTONICS RESEARCH, 2022, 第 9 作者
(8) A new 3-dB bandwidth record of Ge photodiode on Si, A new 3-dB bandwidth record of Ge photodiode on Si, 半导体学报:英文版, 2022, 第 1 作者
(9) GeSn resonance cavity enhanced photodetector with gold bottom reflector for the L band optical communication, Optics Letters, 2022, 第 7 作者
(10) 中红外硅基调制器研究进展(特邀), Research progress of mid-infrared silicon-based modulators(Invited), 红外与激光工程, 2022, 第 3 作者
(11) High-speed and high-power germanium photodetector based on a trapezoidal absorber, OPTICS LETTERS, 2022, 通讯作者
(12) Modeling, analysis, and demonstration of a carrier-injection electro-absorption modulator at 2 µm on Ge-on-Si platform, Optics Express, 2022, 通讯作者
(13) 30 GHz GeSn photodetector on SOI substrate for 2 mu m wavelength application, PHOTONICS RESEARCH, 2021, 通讯作者
(14) Effect of Chloride Ion Concentrations on Luminescence Peak Blue Shift of Light-Emitting Diode Using Anti-Solvent Extraction of Quasi-Two-Dimensional Perovskite, Effect of Chloride Ion Concentrations on Luminescence Peak Blue Shift of Light-Emitting Diode Using Anti-Solvent Extraction of Quasi-Two-Dimensional Perovskite, TSINGHUA SCIENCE AND TECHNOLOGY, 2021, 第 7 作者
(15) Growth of relaxed GeSn film with high Sn content via Sn component-grade buffer layer structure, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 第 6 作者
(16) Germanium lead alloy on insulator grown by rapid melting growth, JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 第 8 作者
(17) 新型硅基IV族合金材料生长及光电器件研究进展(特邀), Research Progress on the Growth of Novel Silicon-based IV Group Alloy Materials and Optoelectronic Devices(Invited), 光子学报, 2021, 第 4 作者
(18) Epitaxial growth and characterization of Ge1-x-ySnxPby ternary alloys, JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 第 8 作者
(19) Investigation of lead surface segregation during germanium–lead epitaxial growth, JOURNAL OF MATERIALS SCIENCE, 2020, 第 7 作者
(20) Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 μm LEDs, JOURNAL OF LUMINESCENCE, 2020, 第 6 作者
(21) High-power back-to-back dual-absorption germanium photodetector, OPTICS LETTERS, 2020, 通讯作者
(22) Spontaneously Conversion from Film to High Crystalline Quality Stripe during Molecular Beam Epitaxy for High Sn Content GeSn, SCIENTIFIC REPORTS, 2020, 第 6 作者
(23) Horizontal GeSn/Ge multi-quantum-well ridge waveguide LEDs on silicon substrates, Horizontal GeSn/Ge multi-quantum-well ridge waveguide LEDs on silicon substrates, PHOTONICS RESEARCH, 2020, 通讯作者
(24) High Extinction Ratio Polarization Beam Splitter Realized by Separately Coupling, IEEE PHOTONICS TECHNOLOGY LETTERS, 2020, 通讯作者
(25) 56 Gbps high-speed Ge electro-absorption modulator, 56 Gbps high-speed Ge electro-absorption modulator, PHOTONICS RESEARCH, 2020, 第 1 作者
(26) Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 mu m LEDs, JOURNAL OF LUMINESCENCE, 2020, 第 6 作者
(27) High-Performance Germanium Waveguide Photodetectors on Silicon, High-Performance Germanium Waveguide Photodetectors on Silicon*, CHINESE PHYSICS LETTERS, 2020, 通讯作者
(28) Study of GePb photodetectors for shortwave infrared detection, OPTICS EXPRESS, 2019, 第 4 作者
(29) Highly Enhanced SWIR Image Sensors Based on Ge1-xSnx-Graphene Heterostructure Photodetector, ACS PHOTONICS, 2019, 第 8 作者
(30) Core-Shell-Structured SiOx-C Composite for Lithium-Ion Battery Anodes, ENERGY TECHNOLOGY, 2019, 第 4 作者
(31) 25 x 50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating, PHOTONICS RESEARCH, 2019, 第 1 作者
(32) Tunable multiple Fano resonance employing polarization-selective excitation of coupled surface-mode and nanoslit antenna resonance in plasmonic nanostructures, SCIENTIFIC REPORTS, 2019, 第 2 作者
(33) Growth of single crystalline GePb film on Ge substrate by magnetron sputtering epitaxy, JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 第 4 作者
(34) Interface Electric Field Confinement Effect of High-Sensitivity Lateral Ge/Si Avalanche Photodiodes, Interface Electric Field Confinement Effect of High-Sensitivity Lateral Ge/Si Avalanche Photodiodes, TSINGHUASCIENCEANDTECHNOLOGY, 2019, 第 2 作者
(35) 25×50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating, 25×50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating, 光子学研究:英文版, 2019, 第 1 作者
(36) Dual-Emission and Two Charge-Transfer States in Ytterbium-doped Cesium Lead Halide Perovskite Solid Nanocrystals, JOURNAL OF PHYSICAL CHEMISTRY C, 2018, 第 8 作者
(37) Recent progress in GeSn growth and GeSn-based photonic devices, Recent progress in GeSn growth and GeSn-based photonic devices, 半导体学报:英文版, 2018, 第 2 作者
(38) Research progress of Ge on insulator grown by rapid melting growth, Research progress of Ge on insulator grown by rapid melting growth, JOURNAL OF SEMICONDUCTORS, 2018, 第 1 作者
(39) Enhanced light trapping in Ge-on-Si-on-insulator photodetector by guided mode resonance effect, JOURNAL OF APPLIED PHYSICS, 2018, 第 1 作者
(40) Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy, JOURNAL OF CRYSTAL GROWTH, 2018, 第 2 作者
(41) MnO2 Nanoflowers and Reduced Graphene Oxide 3D Composites for Ultrahigh-Energy-Density Asymmetric Supercapacitors, ENERGY TECHNOLOGY, 2018, 第 3 作者
(42) Recent progress in GeSn growth and GeSn-based photonic devices, Recent progress in GeSn growth and GeSn-based photonic devices, 半导体学报:英文版, 2018, 第 2 作者
(43) Research progress of Ge on insulator grown by rapid melting growth, Research progress of Ge on insulator grown by rapid melting growth, 半导体学报:英文版, 2018, 第 1 作者
(44) Fabrication o Con ac Low-Resistance Ni Ohmic Contacts on n(+)-Ge1-xSnx, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 第 3 作者
(45) Electrical characteristics of ohmic contact on n-type in situ doped GeSiSn, JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 第 3 作者
(46) Characterization of a Ge1−x−ySiySnx/Ge1−xSnx multiple quantum well structure grown by sputtering epitaxy, LETTER, 2017, 第 5 作者
(47) Ultrathin Broadband Germanium−Graphene Hybrid Photodetector with High Performance, ACS APPLIED MATERIALS & INTERFACES RESEARCH, 2017, 第 6 作者
(48) Ultrathin Broadband Germanium-Graphene Hybrid Photodetector with High Performance, ACS APPLIED MATERIALS & INTERFACES, 2017, 第 6 作者
(49) Characterization of a Ge1-x-ySiySnx/Ge1-xSnx multiple quantum well structure grown by sputtering epitaxy, OPTICS LETTERS, 2017, 第 5 作者
(50) High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, 半导体学报(英文版), 2017, 第 4 作者
(51) High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, JOURNAL OF SEMICONDUCTORS, 2017, 第 4 作者
(52) Facile and Efficient Synthesis of a Microsized SiOx/C Core−Shell Composite as Anode Material for Lithium Ion Batteries, ENERGY & FUELS, 2017, 第 4 作者
(53) Photocurrent Enhancement in Si-Ge Photodetectors by Utilizing Surface Plasmons, PLASMONICS, 2017, 第 2 作者
(54) High-performance ball-milled SiOx anodes for lithium ion batteries, JOURNAL OF POWER SOURCES, 2017, 第 3 作者
(55) Influence of H-2 on strain evolution of high-Sn-content Ge1-x Sn (x) alloys, JOURNAL OF MATERIALS SCIENCE, 2017, 第 3 作者
(56) Defect-free high Sn-content GeSn on insulator grown by rapid melting growth, SCIENTIFIC REPORTS, 2016, 第 1 作者
(57) Room temperature direct-bandgap electroluminescence from a horizontal Ge ridge waveguide on Si, Room temperature direct-bandgap electroluminescence from a horizontal Ge ridge waveguide on Si, CHINESE PHYSICS B, 2016, 第 2 作者
(58) GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy, APPLIED PHYSICS LETTERS, 2016, 第 3 作者
(59) Research progress of Si-based germanium materials and devices, JOURNAL OF SEMICONDUCTORS, 2016, 第 3 作者
(60) High-speed waveguide-integrated Ge/Si avalanche photodetector, CHINESE PHYSICS B, 2016, 第 3 作者
(61) Temperature dependent direct-bandgap light emission and optical gain of Ge, CHINESE PHYSICS B, 2016, 第 1 作者
(62) Cu2+1O coated polycrystalline Si nanoparticles as anode for lithium-ion battery, NANOSCALE RESEARCH LETTERS, 2016, 第 4 作者
(63) Room temperature direct-bandgap electroluminescence from a horizontal Ge ridge waveguide on Si, Room temperature direct-bandgap electroluminescence from a horizontal Ge ridge waveguide on Si, 中国物理B:英文版, 2016, 第 2 作者
(64) Silicon based GeSn p-i-n photodetector for SWIR detection, IEEE PHOTONICS JOURNAL, 2016, 第 6 作者
(65) High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate, SCIENTIFIC REPORTS, 2016, 第 3 作者
(66) Characterization and thermal stability of GeSn/Ge multi-quantum wells on Ge (100) substrates, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 第 2 作者
(67) Comparative studies of band structures for biaxial (100)-, (110)-, and (111)-strained GeSn: A first-principles calculation with GGA1U approach, JOURNAL OF APPLIED PHYSICS, 2015, 第 4 作者
(68) Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy, JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 第 2 作者
(69) Si基IV族异质结构发光器件的研究进展, Recent progress in Ge and GeSn light emission on Si, ACTA PHYSICA SINICA, 2015, 第 3 作者
(70) High hole mobility GeSn on insulator formed by self-organized seeding lateral growth, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2015, 通讯作者
(71) Lateral growth of single-crystal Ge on insulating substrate using amorphous Si seed by rapid melting growth, THIN SOLID FILMS, 2015, 第 1 作者
(72) Theoretical study of the optical gain characteristics of a Ge1-xSnx alloy for a short-wave infrared laser, CHINESE PHYSICS B, 2015, 第 6 作者
(73) Ni(Ge1-x-ySixSny) Ohmic Contact Formation on p-type Ge0.86Si0.07Sn0.07, IEEE ELECTRON DEVICE LETTERS, 2015, 第 4 作者
(74) Strain Evolution of Ge on Insulator Formed by Rapid Melting Growth, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2015, 通讯作者
(75) Si基IV族异质结构发光器件的研究进展, Recent progress in Ge and GeSn light emission on Si, ACTA PHYSICA SINICA, 2015, 第 3 作者
(76) Formation and characterization of Ni/Al Ohmic contact on n+-type GeSn, SOLID-STATE ELECTRONICS, 2015, 第 4 作者
(77) Theoretical study on optical gain characteristics of Ge_(1-x)Sn_x alloy for short-wave infrared laser, CHINESE PHYSICS. B, 2015, 第 6 作者
(78) Enhanced light trapping in periodically truncated cone silicon nanowire structure, JOURNAL OF SEMICONDUCTORS, 2015, 第 4 作者
(79) High-responsivity and high-saturation-current Si/Ge uni-traveling-carrier photodetector, INFRARED SENSORS, DEVICES, AND APPLICATIONS V, 2015, 第 3 作者
(80) Zero-bias high-responsivity high-bandwidth top-illuminated germanium p-i-n photodetectors, CHINESE PHYSICS B, 2014, 第 3 作者
(81) Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature, CHINESE PHYSICS B, 2014, 第 2 作者
(82) Direct-bandgap electroluminescence from a horizontal Ge p-i-n ridge waveguide on Si(001) substrate, APPLIED PHYSICS LETTERS, 2014, 第 1 作者
(83) Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance, NANOSCALE RESEARCH LETTERS, 2014, 第 5 作者
(84) Si基IV族光电器件的研究进展(一)—激光器, Progress in Study of Si-Based Group IV Optoelectronic Devices(Ⅰ)——Lasers, 激光与光电子学进展, 2014, 第 1 作者
(85) Crystal Quality Improvement of GeSn Alloys by Thermal Annealing, ECS SOLID STATE LETTERS, 2014, 第 4 作者
(86) Sixteen-element Ge-on-SOI PIN photo-detector arrays for parallel optical interconnects, CHINESE PHYSICS B, 2014, 第 3 作者
(87) High-Bandwidth and High-Responsivity Top-Illuminated Germanium Photodiodes for Optical Interconnection, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 第 3 作者
(88) Ge-Si quantum dots thin film solar cells, APPLIED PHYSICS LETTERS, 2013, 第 1 作者
(89) Design of an evanescent-coupled GeSi electro-absorption modulator based on Franz-Keldysh effect, ACTA PHYSICA SINICA, 2013, 第 2 作者
(90) Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate, ACTA PHYSICA SINICA, 2013, 第 1 作者
(91) Enhanced photoluminescence from porous silicon nanowire arrays, NANOSCALE RESEARCH LETTERS, 2013, 第 3 作者
(92) Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate, ACTA PHYSICA SINICA, 2013, 第 1 作者
(93) Si基Ge异质结构发光器件的研究进展, Progress in Ge/Si heterostructures for light emitters, 中国光学, 2013, 第 1 作者
(94) Room temperature photoluminescence of Ge-on-insulator structures formed by rapid melt growth, JOURNAL OF APPLIED PHYSICS, 2013, 第 2 作者
(95) High-responsivity GeSn short-wave infrared p-i-n photodetectors, APPLIED PHYSICS LETTERS, 2013, 第 5 作者
(96) High bandwidth surface-illuminated InGaAs/InP uni-travelling-carrier photodetector, CHINESE PHYSICS B, 2013, 第 4 作者
(97) Design of an evanescent-coupled GeSi electro-absorption modulator based on Franz-Keldysh effect, ACTA PHYSICA SINICA, 2013, 第 2 作者
(98) Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate, CHINESE PHYSICS B, 2013, 第 1 作者
(99) Progress in Ge/Si heterostructures for light emitters, CHINESE JOURNAL OF OPTICS, 2013, 第 1 作者
(100) Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si(001) substrates by phosphorus-doping, OPTICS EXPRESS, 2012, 通讯作者
(101) Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells, APPLIED PHYSICS LETTERS, 2012, 第 1 作者
(102) Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature, NANOSCALE RESEARCH LETTERS, 2012, 第 1 作者
(103) Remarkable Franz-Keldysh Effect in Ge-on-Si p-i-n Diodes, CHINESE PHYSICS LETTERS, 2012, 第 4 作者
(104) Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As, IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS GFP, 2011, 第 5 作者

科研活动

   
科研项目
( 1 ) 高速高响应硅基探测器阵列的研究, 负责人, 国家任务, 2020-01--2021-12
( 2 ) 快速熔融法制备硅基锗锡及激光器的研究, 负责人, 国家任务, 2020-01--2023-12
参与会议
(1)高速低功耗小尺寸锗硅电吸收调制器   2021中国光网络研讨会   2021-06-17