080903-微电子学与固体电子学
070205-凝聚态物理

低维半导体光学性质
光和物质的相互作用

1995-09--2000-07   复旦大学   博士
1991-09--1995-07   上海交通大学   学士

研究生

理学博士

   

2010-03~现在, 中科院上海技术物理所, 研究员
2006-01~2010-03,瑞典林雪平大学, 博士后
2004-03~2005-12,日本东北大金属研究所, 非常任讲师
2000-08~2003-12,复旦大学, 教师

   

[1] 王兴军, 张斌, 邱维阳, 朱思新. 一种简单有效地抑制荧光干扰的光调制反射光谱检测系统. CN: CN107192675B, 2020-04-07.

[2] 王兴军, 李玉涟, 张波, 邱维阳, 何素明, 周书同, 罗向东, 翁钱春, 陆卫. γ辐照降低LED效率崩塌效应及增强发光强度的方法. 中国: CN104183676A, 2014-12-03.

[3] 陆卫, 夏长生, 王少伟, 张波, 甄红楼, 王兴军, 陈效双. 一种高效GaN基半导体发光二极管. 中国: CN102368524A, 2012-03-07.

   

[1] Chen, Hao, Ge, Xun, Wang, Yiming, Xu, Qianqian, Li, Zhifeng, Zhou, Xiaohao, Hao, Jiaming, Hu, Weida, Li, Shengjuan, Wang, Xingjun. Uniaxial Strain-Induced Tunable Mid-infrared Light Emission from Thin Film Black Phosphorus. JOURNAL OF PHYSICAL CHEMISTRY LETTERS[J]. 2023, 14(8): 2092-2098, http://dx.doi.org/10.1021/acs.jpclett.3c00145.
[2] Jiazhen Zhang, Luhan Yang, Huang Xu, Jie Zhou, Yuxiang Sang, Zhuangzhuang Cui, Changlong Liu, Jingjing Liu, Tianle Guo, Xingjun Wang, Lin Wang, Gang Chen, Xiaoshuang Chen. Dip-Coating Self-Assembly Fabrication and Polarization Sensitive Photoresponse of Aligned Single-Walled Carbon Nanotube Film. SENSORS[J]. 2022, 22(490): [3] Zhu, Sixin, Li, Dan, Wang, Jianlu, Wang, Qiang, Wu, Yongpeng, Xiong, Liang, Jiang, Zhangfeng, Lin, Huihong, Gong, Zhirui, Qin, Qi, Wang, Xingjun. Exciton emissions in bilayer WSe2 tuned by the ferroelectric polymer. JOURNAL OF PHYSICAL CHEMISTRY LETTERS[J]. 2022, 13(7): 1636-1643, [4] Sang, Yuxiang, Guo，Jiaoyang, Chen，Hao, yang wanli, chen xin, Liu，Fang, Wang, Xingjun. Measurement of Thermal Conductivity of Suspended and Supported Single-layer WS2 Using Micro-Photoluminescence Spectroscopy. Journal of Physical Chemistry C[J]. 2022, 126(15): 6637-6645, [5] Yin Yu, Shuo Li, Xingjun Wang, Pingping Chen, Fang Liu, Yun Hou. Growth of Mn-Co-Ni-O nanowires by pulsed laser deposition. MATERIALS LETTERS[J]. 2022, 319: [6] Xu, Decai, Sang, Yuxiang, Chu, Yuanyuan, Yu, Yin, Liu, Fang, Hou, Yun, Wang, Xingjun. Optothermal Raman measurement determined thermal conductivity characteristics in NiMn2O4 films grown by chemical solution deposition. MATERIALS RESEARCH EXPRESS[J]. 2021, 8(5): http://dx.doi.org/10.1088/2053-1591/abfe2e.
[7] Zhao, Wenchao, Wen, Zhengji, Xu, Qianqian, Zhou, Ziji, Li, Shimin, Fang, Shiyu, Chen, Ting, Sun, Liaoxin, Wang, Xingjun, Liu, Yufeng, Sun, Yan, Tan, YanWen, Dai, Ning, Hao, Jiaming. Remarkable photoluminescence enhancement of CsPbBr3 perovskite quantum dots assisted by metallic thin films. NANOPHOTONICS[J]. 2021, 10(8): 2257-2264, http://dx.doi.org/10.1515/nanoph-2021-0064.
[8] Luo, Ziyu, Ma, Chao, Lin, Yue, Jiang, Qi, Liu, Binjie, Yang, Xin, Yi, Xiao, Qu, Junyu, Zhu, Xiaoli, Wang, Xiao, Zhou, Jun, Wang, Xingjun, Chen, Weimin M, Buyanova, Irina A, Chen, Shula, Pan, Anlian. An Efficient Deep-Subwavelength Second Harmonic Nanoantenna Based on Surface Plasmon-Coupled Dilute Nitride GaNP Nanowires. NANO LETTERS[J]. 2021, 21(8): 3426-3434, http://dx.doi.org/10.1021/acs.nanolett.0c05115.
[9] Chu, Yuanyuan, Sang, Yuxiang, Liu, Yizhe, Liu, Yingmei, Xu, Zhicheng, Chen, Jianxin, Liu, Fang, Li, Shengjuan, Sun, Bo, Wang, Xingjun. Reduced thermal conductivity of epitaxial GaAsSb on InP due to lattice mismatch induced biaxial strain. JOURNAL OF APPLIED PHYSICS[J]. 2021, 130(1): 015106-, [10] Zhang, Bin, Stehr, Jan E, Chen, PingPing, Wang, Xingjun, Ishikawa, Fumitaro, Chen, Weimin M, Buyanova, Irina A. Anomalously Strong Second-Harmonic Generation in GaAs Nanowires via Crystal-Structure Engineering. ADVANCED FUNCTIONAL MATERIALS[J]. 2021, 31(36): http://dx.doi.org/10.1002/adfm.202104671.
[11] Yang, Xin, Shan, Zhengping, Luo, Ziyu, Hu, Xuelu, Liu, Huawei, Liu, Qngbo, Zhang, Yushuang, Zhang, Xuehong, Shoaib, Muhammad, Qu, Junyu, Yi, Xiao, Wang, Xiao, Zhu, Xiaoli, Liu, Yuan, Liao, Lei, Wang, Xingjun, Chen, Shula, Pan, Anlian. An Electrically Controlled Wavelength-Tunable Nanoribbon Laser. ACS NANO[J]. 2020, 14(3): 3397-3404, http://dx.doi.org/10.1021/acsnano.9b09301.
[12] Liu, Yingmei, Chu, Yuanyuan, Lu, Yue, Li, Ying, Li, Shengjuan, Jin, Chuan, Chen, Jianxin, Wang, Xingjun. Lattice-Optimized GaAsSb/InP Heterojunction Toward Both Efficient Carrier Confinement and Thermal Dissipation. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS[J]. 2020, 14(6): 2000108-, https://www.webofscience.com/wos/woscc/full-record/WOS:000525809400001.
[13] Zhang, B, Jansson, M, Chen, PP, Wang, XJ, Chen, W M, Buyanova, I A. Effects of Bi incorporation on recombination processes in wurtzite GaBiAs nanowires. NANOTECHNOLOGY[J]. 2020, 31(22): http://dx.doi.org/10.1088/1361-6528/ab76f0.
[14] Li, Baobao, Li, Shimin, Sun, Yan, Li, Shengjuan, Chen, Gang, Wang, Xingjun. Enhanced luminescence properties of InAs nanowires via organic and inorganic sulfide passivation. NANOTECHNOLOGY[J]. 2019, 30(44): https://www.webofscience.com/wos/woscc/full-record/WOS:000482012000002.
[15] Zhang, Bin, Qiu, Weiyang, Chen, Shula, Chen, Pingping, Chen, Weimin M, Buyanova, Irina A, Wang, Xingjun. Effect of exciton transfer on recombination dynamics in vertically nonuniform GaAsSb epilayers. APPLIED PHYSICS LETTERS[J]. 2019, 114(25): https://www.webofscience.com/wos/woscc/full-record/WOS:000474433800034.
[16] Zhu, Sixin, Qiu, Weiyang, Wang, Han, Lin, Tie, Chen, Pingping, Wang, Xingjun. Raman spectroscopic determination of hole concentration in undoped GaAsBi. SEMICONDUCTOR SCIENCE AND TECHNOLOGY[J]. 2019, 34(1): http://dx.doi.org/10.1088/1361-6641/aaef02.
[17] Li BaoBao, Li ShengJuan, Chen Gang, Li ShiMin, Wang XingJun. The influence of sulfide passivation on optical properties of InAs nanowires. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2019, 38(5): 591-597, https://www.webofscience.com/wos/woscc/full-record/WOS:000493720100008.
[18] 李宝宝, 李生娟, 陈刚, 李世民, 王兴军. 硫化物钝化对InAs纳米线光学特性的影响. 红外与毫米波学报[J]. 2019, 38(5): 591-597, http://lib.cqvip.com/Qikan/Article/Detail?id=7003051255.
[19] Wang, XingJun, Scopece, Daniele, Wang, JunZhong, Fujikawa, Yasunori, Huang, ChunLai, Sakurai, Toshio, Chen, Gang. Arsenic-induced faceted lateral nanoprisms array on Si (103) surface. APPLIED SURFACE SCIENCE[J]. 2019, 463: 713-720, http://dx.doi.org/10.1016/j.apsusc.2018.08.255.
[20] Zhang, Bin, Huang, Yuqing, Stehr, Jan Eric, Chen, PingPing, Wang, XingJun, Lu, W, Chen, Weimin M, Buyanova, Irina A. Band Structure of Wurtzite GaBiAs Nanowires. NANO LETTERS[J]. 2019, 19(9): 6454-6460, http://dx.doi.org/10.1021/acs.nanolett.9b02679.
[21] Li, Dan, Wang, Xudong, Chen, Yan, Zhu, Sixin, Gong, Fan, Wu, Guangjian, Meng, Caimin, Liu, Lan, Wang, Lin, Lin, Tie, Sun, Shuo, Shen, Hong, Wang, Xingjun, Hu, Weida, Wang, Jianlu, Sun, Jinglan, Meng, Xiangjian, Chu, Junhao. The ambipolar evolution of a high-erformance WSe2 transistor assisted by a ferroelectric polymer. NANOTECHNOLOGY[J]. 2018, 29(10): http://www.corc.org.cn/handle/1471x/2181602.
[22] Zhang, Bin, Chen, Cheng, Han, Junbo, Jin, Chuan, Chen, Jianxin, Wang, Xingjun. Effect of thermal annealing on carrier localization and efficiency of spin detection in GaAsSb epilayers grown on InP. AIP ADVANCES[J]. 2018, 8(4): https://doaj.org/article/c631584b33e3457ab623260532e85894.
[23] Zhu, Sixin, Li, Dan, Hu, Yibin, Wang, Jianlu, Wang, Xingjun, Lu, Wei. Enhancement of direct and indirect exciton emissions in few-layer WSe2 at high temperatures. MATERIALSRESEARCHEXPRESS[J]. 2018, 5(6): http://www.corc.org.cn/handle/1471x/2173649.
[24] Zhang, Bin, Qiu, WeiYang, Chen, PingPing, Wang, XingJun. Photoreflectance and photoreflectance excitation study of optical transitions in GaAsBi/GaAs heterostructure. JOURNAL OF APPLIED PHYSICS[J]. 2018, 123(3): [25] Chen, Cheng, Han, YiBo, Wang, XingJun, Chen, PingPing, Han, JunBo, Li, Liang. Low temperature photo-induced carrier dynamics in the GaAs0.985N0.015 alloy. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2017, 699: 297-302, http://dx.doi.org/10.1016/j.jallcom.2017.01.012.
[26] Zhang, Bin, Wang, XingJun. A modified optics based technique for suppressing spurious signals in photoreflectance spectra. REVIEW OF SCIENTIFIC INSTRUMENTS[J]. 2017, 88(10): http://202.127.2.71:8080/handle/181331/12262.
[27] Qiu, Feng, Qiu, Weiyang, Li, Yulian, Wang, Xingjun, Zhang, Yun, Zhou, Xiaohao, Lv, Yingfei, Sun, Yan, Deng, Huiyong, Hu, Shuhong, Dai, Ning, Wang, Chong, Yang, Yu, Zhuang, Qiandong, Hayne, Manus, Krier, A. An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots. NANOTECHNOLOGY[J]. 2016, 27(6): http://dx.doi.org/10.1088/0957-4484/27/6/065602.
[28] Zhang, Kenan, Zhang, Tianning, Cheng, Guanghui, Li, Tianxin, Wang, Shuxia, Wei, Wei, Zhou, Xiaohao, Yu, Weiwei, Sun, Yan, Wang, Peng, Zhang, Dong, Zeng, Changgan, Wang, Xingjun, Hu, Weida, Fan, Hong Jin, Shen, Guozhen, Chen, Xin, Duan, Xiangfeng, Chang, Kai, Dai, Ning. Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe2/MoS2 van der Waals Heterostructures. ACS NANO[J]. 2016, 10(3): 3852-3858, http://ir.semi.ac.cn/handle/172111/27771.
[29] Qiu, Weiyang, Zhang, Bin, Wang, Yafeng, Chen, Pingping, Chen, Zhanghai, Li, Ning, Lu, Wei, Wang, Xingjun. Increase in the efficiency of spin detection based on GaAsSb by applying a longitudinal magnetic field or a postgrowth annealing process. APPLIED PHYSICS EXPRESS[J]. 2016, 9(2): https://www.webofscience.com/wos/woscc/full-record/WOS:000371297800005.
[30] Qiu, Weiyang, Wang, Xingjun, Chen, Pingping, Li, Ning, Lu, Wei. Optical spin polarization and Hanle effect in GaAsSb: Temperature dependence. APPLIED PHYSICS LETTERS[J]. 2014, 105(8): https://www.webofscience.com/wos/woscc/full-record/WOS:000342753500033.
[31] Puttisong, Y, Wang，Xingjun, Buyanova, I A, Geelhaar, L, Riechert, H, Ptak, A J, Tu, C W, Chen, W M. Efficient room-temperature nuclear spin hyperpolarization of a defect atom in a semiconductor. NATURE COMMUNICATIONS[J]. 2013, 4: http://dx.doi.org/10.1038/ncomms2776.
[32] Stehr, J E, Wang，Xingjun, Filippov, S, Pearton, S J, Ivanov, I G, Chen, W M, Buyanova, I A. Defects in N, O and N, Zn implanted ZnO bulk crystals. JOURNAL OF APPLIED PHYSICS[J]. 2013, 113(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000316565600020.
[33] Ma, Yingjie, Zhong, Zhenyang, Lv, Quan, Qiu, Weiyang, Wang，Xingjun, Zhou, Tong, Fan, Yongliang, Jiang, Zuimin. Optical properties of coupled three-dimensional Ge quantum dot crystals. OPTICS EXPRESS[J]. 2013, 21(5): 6053-6060, https://www.webofscience.com/wos/woscc/full-record/WOS:000316103300094.
[34] Puttisong, Y, Wang，Xingjun, Buyanova, I A, Chen, W M. Effect of hyperfine-induced spin mixing on the defect-enabled spin blockade and spin filtering in GaNAs. PHYSICAL REVIEW B[J]. 2013, 87(12): https://www.webofscience.com/wos/woscc/full-record/WOS:000316103800004.
[35] Filippov, S, Wang，Xingjun, Devika, M, Reddy, N Koteeswara, Tu, C W, Chen, W M, Buyanova, I A. Effects of Ni-coating on ZnO nanowires: A Raman scattering study. JOURNAL OF APPLIED PHYSICS[J]. 2013, 113(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000320674500069.
[36] Li, Y L, Wang，Xingjun, He, S M, Zhang, B, Sun, L X, Li, Y D, Guo, Q, Chen, C Q, Chen, Z H, Lu, W. Origin of the redshift of the luminescence peak in InGaN light-emitting diodes exposed to Co-60 gamma-ray irradiation. JOURNAL OF APPLIED PHYSICS[J]. 2012, 112(12): http://www.irgrid.ac.cn/handle/1471x/596128.
[37] Wang，Xingjun, Buyanova, I A, Chen, W M. Sub-millisecond dynamic nuclear spin hyperpolarization in a semiconductor: A case study from P-In antisite in InP. PHYSICAL REVIEW B[J]. 2012, 86(20): https://www.webofscience.com/wos/woscc/full-record/WOS:000310988700001.
[38] Dagnelund, D, Vorona, I P, Nosenko, G, Wang，Xingjun, Tu, C W, Yonezu, H, Polimeni, A, Capizzi, M, Chen, W M, Buyanova, I A. Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study. JOURNAL OF APPLIED PHYSICS[J]. 2012, 111(2): http://202.127.1.142/handle/181331/7167.
[39] Wang，Xingjun, Chen, W M, Ren, F, Pearton, S, Buyanova, I A. Effects of P implantation and post-implantation annealing on defect formation in ZnO. JOURNAL OF APPLIED PHYSICS[J]. 2012, 111(4): http://202.127.1.142/handle/181331/7137.
[40] Dagnelund, D, Wang，Xingjun, Tu, C W, Polimeni, A, Capizzi, M, Chen, W M, Buyanova, I A. Effect of postgrowth hydrogen treatment on defects in GaNP. APPLIED PHYSICS LETTERS[J]. 2011, 98(14): https://www.webofscience.com/wos/woscc/full-record/WOS:000289297800035.
[41] Puttisong, Y, Wang，Xingjun, Buyanova, I A, Tu, C W, Geelhaar, L, Riechert, H, Chen, W M. Room-temperature spin injection and spin loss across a GaNAs/GaAs interface. APPLIED PHYSICS LETTERS[J]. 2011, 98(1): https://www.webofscience.com/wos/woscc/full-record/WOS:000286009800041.
[42] Puttisong, Y, Wang，Xingjun, Buyanova, I A, Carrere, H, Zhao, F, Balocchi, A, Marie, X, Tu, C W, Chen, W M. Electron spin filtering by thin GaNAs/GaAs multiquantum wells. APPLIED PHYSICS LETTERS[J]. 2010, 96(5): https://www.webofscience.com/wos/woscc/full-record/WOS:000274319500045.
[43] Dagnelund, D, Vorona, I P, Vlasenko, L S, Wang，Xingjun, Utsumi, A, Furukawa, Y, Wakahara, A, Yonezu, H, Buyanova, I A, Chen, W M. Evidence for a phosphorus-related interfacial defect complex at a GaP/GaNP heterojunction. PHYSICAL REVIEW B[J]. 2010, 81(11): http://dx.doi.org/10.1103/PhysRevB.81.115334.
[44] Wang，Xingjun, Vlasenko, L S, Pearton, S J, Chen, W M, Buyanova, I A. Oxygen and zinc vacancies in as-grown ZnO single crystals. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2009, 42(17): https://www.webofscience.com/wos/woscc/full-record/WOS:000269199200041.
[45] Wang, Xingjun, Buyanova, I A, Zhao, F, Lagarde, D, Balocchi, A, Marie, X, Tu, C W, Harmand, J C, Chen, W M. Room-temperature defect-engineered spin filter based on a non-magnetic semiconductor. NATURE MATERIALS[J]. 2009, 8(3): 198-202, http://dx.doi.org/10.1038/NMAT2385.
[46] Wang，Xingjun, Puttisong, Y, Tu, C W, Ptak, Aaron J, Kalevich, V K, Egorov, A Yu, Geelhaar, L, Riechert, H, Chen, W M, Buyanova, I A. Dominant recombination centers in Ga(In)NAs alloys: Ga interstitials. APPLIED PHYSICS LETTERS[J]. 2009, 95(24): http://dx.doi.org/10.1063/1.3275703.
[47] Zhao, F, Balocchi, A, Truong, G, Amand, T, Marie, X, Wang，Xingjun, Buyanova, I A, Chen, W M, Harmand, J C. Electron spin control in dilute nitride semiconductors. JOURNAL OF PHYSICS-CONDENSED MATTER[J]. 2009, 21(17): https://www.webofscience.com/wos/woscc/full-record/WOS:000264779900013.
[48] Buyanova, I A, Wang, X J, Wang, W M, Tu, C W, Chen, W M. Effects of Ga doping on optical and structural properties of ZnO epilayers. SUPERLATTICES AND MICROSTRUCTURES[J]. 2009, 45(4-5): 413-420, http://dx.doi.org/10.1016/j.spmi.2008.10.039.
[49] Lim, W, Norton, D P, Pearton, S J, Wang, X J, Chen, W M, Buyanova, I A, Osinsky, A, Dong, J W, Hertog, B, Thompson, A V, Schoenfeld, W V, Wang, Y L, Ren, F. Migration and luminescence enhancement effects of deuterium in ZnO/ZnCdO quantum wells. APPLIED PHYSICS LETTERS[J]. 2008, 92(3): https://www.webofscience.com/wos/woscc/full-record/WOS:000252718600026.
[50] Dagnelund, D, Wang, X J, Vorona, I P, Buyanova, I A, Chen, W M, Utsumi, A, Furukawa, Y, Moon, S, Wakahara, A, Yonezu, H. Spin resonance spectroscopy of grown-in defects in Ga(In)NP alloys. SUPERLATTICES AND MICROSTRUCTURES[J]. 2008, 43(5-6): 620-625, http://dx.doi.org/10.1016/j.spmi.2007.07.008.
[51] Dagnelund, D, Buyanova, I A, Wang, X J, Chen, W M, Utsumi, A, Furukawa, Y, Wakahara, A, Yonezu, H. Formation of grown-in defects in molecular beam epitaxial Ga(In)NP: Effects of growth conditions and postgrowth treatments. JOURNAL OF APPLIED PHYSICS[J]. 2008, 103(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000254536900035.
[52] Wang，Xingjun. Effect of stoichiometry on defect formation in ZnO epilayers grown by molecular -beam-epitaxy: an optically detected magnetic resonance study. JAPPLPHYS[J]. 2008, [53] Wang，Xingjun, Buyanova, I A, Chen, W M, Pan, C J, Tu, C W. Optical characterization studies of grown-in defects in ZnO epilayers grown by molecular beam epitaxy. PHYSICA B-CONDENSED MATTER[J]. 2007, 401: 413-416, http://dx.doi.org/10.1016/j.physb.2007.08.200.
[54] Dagnelund, D, Vorona, I, Wang，Xingjun, Buyanova, I A, Chen, W M, Geelhaar, L, Riechert, H. Optically detected cyclotron resonance studies of InxGa1-xNyAs1-y/GaAs quantum wells sandwiched between type-II AlAs/GaAs superlattices. JOURNAL OF APPLIED PHYSICS[J]. 2007, 101(7): https://www.webofscience.com/wos/woscc/full-record/WOS:000245691000045.
[55] Yang, Heqing, Yao, Xi, Wang, Xingjun, Gu, Xiaoxiao, Wang, Fujian. Visible room-temperature photoluminescence of Ge-doped SiO2 glasses fabricated by a sol-gel process. OPTICAL MATERIALS[J]. 2007, 29(6): 631-635, http://dx.doi.org/10.1016/j.optmat.2005.11.011.
[56] Wang，Xingjun, Buyanova, I A, Chen, W M, Izadifard, M, Rawal, S, Norton, D P, Pearton, S J, Osinsky, A, Dong, J W, Dabiran, Amir. Band gap properties of Zn1-xCdxO alloys grown by molecular-beam epitaxy. APPLIED PHYSICS LETTERS[J]. 2006, 89(15): https://www.webofscience.com/wos/woscc/full-record/WOS:000241247900035.
[57] Yang, HQ, Yao, X, Xie, SH, Wang，Xingjun, Liu, SX, Fang, Y, Gu, XX, Wang, FJ. Structure and photoluminescence of Ge nanoparticles embedded in SiO2 gel glasses fabricated at different temperatures. OPTICAL MATERIALS[J]. 2005, 27(4): 725-730, http://dx.doi.org/10.1016/j.optmat.2004.09.017.
[58] Yang, HQ, Zhang, BL, Wang, XG, Wang, XJ, Li, T, Xie, SH, Yao, X. Sol-gel synthesis and optical properties of size controlled Indium Arsenide nanocrystals embedded in silica glasses. JOURNAL OF CRYSTAL GROWTH[J]. 2005, 280(3-4): 521-529, http://dx.doi.org/10.1016/j.jcrysgro.2005.04.005.
[59] Wang, JZ, Wu, KH, Yang, WS, Wang, XJ, Sadowski, JT, Fujikawa, Y, Sakurai, T. Structural transition of pentacene monolayer on Ga bilayer: From brick-wall structure to herringbone pattern of molecular dimers. SURFACE SCIENCE[J]. 2005, 579(1): 80-88, http://dx.doi.org/10.1016/j.susc.2005.01.049.
[60] Huang, SH, Ma, XY, Wang，Xingjun, Lu, F. Optical characteristics of laser-crystallized Si1-xGex nanocrystals. NANOTECHNOLOGY[J]. 2003, 14(1): 25-28, https://www.webofscience.com/wos/woscc/full-record/WOS:000180689500008.
[61] Li, B, Zhou, J, Li, LT, Wang, XJ, Liu, XH, Zi, J. Ferroelectric inverse opals with electrically tunable photonic band gap. APPLIED PHYSICS LETTERS[J]. 2003, 83(23): 4704-4706, https://www.webofscience.com/wos/woscc/full-record/WOS:000186970200006.
[62] 史向华, 王兴军, 俞根才, 侯晓远. 分子束外延Zndse／ZnsxSe1—x超晶格光学特性. 半导体学报[J]. 2003, 24(4): 377-380, http://lib.cqvip.com/Qikan/Article/Detail?id=7594866.
[63] Zi, J, Yu, XD, Li, YZ, Hu, XH, Xu, C, Wang，Xingjun, Liu, XH, Fu, RT. Coloration strategies in peacock feathers. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA[J]. 2003, 100(22): 12576-12578, https://www.webofscience.com/wos/woscc/full-record/WOS:000186301100014.
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（ 1 ） 基于GaNAs体系缺陷调控的新型自旋过滤器的物理特性研究, 负责人, 国家任务, 2013-01--2016-12
（ 2 ） 基于III-V族稀氮半导体中缺陷的自旋过滤器机理研究, 负责人, 地方任务, 2011-10--2013-09
（ 3 ） 光电功能材料中痕量缺陷与杂质光电行为研究, 负责人, 中国科学院计划, 2011-08--2014-08
（ 4 ） GaAsBi纳米线的光学及其缺陷特性的研究, 负责人, 地方任务, 2018-06--2021-05
（ 5 ） Bi诱导GaAs纳米线形成的缺陷及其调控的光学极化特性的研究, 负责人, 国家任务, 2019-01--2022-12
（ 6 ） 亚波长PbS纳米线中红外激光器的制备及其对波长和阈值的调控研究, 负责人, 国家任务, 2022-01--2025-12

（1）Effect of Bismuth-induced control Phase of GaAs Nanowires on Optical Polarization   王兴军   2018-10-08

已指导学生

姜祎祎  硕士研究生  080903-微电子学与固体电子学  

张斌  博士研究生  080903-微电子学与固体电子学  

朱思新  博士研究生  080903-微电子学与固体电子学  

现指导学生

郭骄阳  硕士研究生  080903-微电子学与固体电子学