基本信息
韩修训  男  博导  江西理工大学
电子邮件: xxhan@licp.cas.cn
通信地址: 甘肃省兰州市天水中路18号
邮政编码: 730000

招生信息

   
招生专业
080502-材料学
070304-物理化学(含:化学物理)
085204-材料工程
招生方向
功能薄膜材料与技术,纳米材料
胶体与界面化学,功能高分子化学

教育背景

2002-09--2005-07 中国科学院半导体研究所 博士
1999-09--2002-06 中国科学院兰州化学物理研究所 硕士
1995-09--1999-07 山东大学 化学学院 本科

工作经历

   
工作简历
2012-02--今 中国科学院兰州化学物理研究所 研究员
2009-04--2012-02 日本丰田工业大学 博士后研究员
2007-07--2009-03 日本佐贺大学 讲师(研究员)
2005-10--2007-07 日本名古屋大学 博士后研究员

专利与奖励

   
专利成果
(1) 一种利用溶胶凝胶法制备硫族化合物薄膜的方法,发明,2013,第1作者,专利号:201310605709.X

出版信息

   
发表论文
(1) Tunable photoluminescence and spectrum split from fluorinated to hydroxylated graphene,Nanoscale,2014,通讯作者
(2) Cu2ZnSnS4 alloys synthesized from Cu2SnS3@ZnS nanoparticles via a facile hydrothermal approach,Materials Letters,2014,通讯作者
(3) Step-by-step build-up of ordered p–n heterojunctions at nanoscale for efficient light harvesting,RSC Advances,2013,第3作者
(4) Synthesis of the Cu2ZnSn(S, Se)4 alloys with tunable phase structure and composition via a novel non-toxic solution method,RSC Advances,2013,通讯作者
(5) Cooperatively exfoliated fluorinated graphene with full-color emission,RSC Advances,2012,通讯作者
(6) Effects of a key deep level and interface states on the performance of GaAsN solar cells: a simulation analysis,Semicond. Sci. Technol.,2012,第1作者
(7) Synthesis of a porous birnessite manganese dioxide hierarchical structure using thermally reduced graphene oxide paper as a sacrificing template for supercapacitor application,New J. Chem.,2012,通讯作者
(8) Growth orientation dependent photoluminescence of GaAsN alloys,Appl. Phys. Lett. ,2012,第1作者
(9) One-pot sonochemical preparation of fluorographene and selective tuning of its fluorine coverage,J. Mater. Chem.,2012,通讯作者
(10) N incorporation and optical properties of GaAsN epilayers on (311)A/B GaAs substrates,J. Phys. D: Appl. Phys. ,2011,第1作者

科研活动

   
参与会议
(1) Synthesis of the Cu2ZnSn(S, Se)4 powder with tunable phase structure and composition via a novel non-toxic solution method,2013-10,Yun Zhao, Wen Li, Liang Liu, Xiuxun Han*, Tooru Tanaka
(2) Improving Si Doping Efficiency in GaAsN epilayers by Using (211)B and (311)B GaAs Substrates,2011-09,Xiuxun Han, Makoto Inagaki, Nobuaki Kojima, Yoshio Ohshita, and Masafumi Yamaguchi
(3) Effects of a key deep level and interface states on GaAsN based solar cells: a simulation analysis,2011-09,Xiuxun Han,Tomohiro Tanaka, Nobuaki Kojima, Yoshio Ohshita, Masafumi Yamaguchi and Shinichiro Sato
(4) Enhanced N Incorporation and Improved Optical Properties in GaAsN Epilayers by using High-Index GaAs Substrates,2010-06,Xiuxun Han, Hidetoshi Suzuki, Jong-Han Lee, Makoto Inagaki, Nobuaki Kojima, Yoshio Ohshita, Masafumi Yamaguchi