基本信息
张韵  男  博导  中国科学院半导体研究所
电子邮件: yzhang34@semi.ac.cn
通信地址: 北京市海淀区清华东路甲35号中科院半导体所1号科研楼
邮政编码: 100083

招生信息

   
招生专业
080903-微电子学与固体电子学
080501-材料物理与化学
080901-物理电子学
招生方向
基于GaN基半导体材料的紫外光电器件及应用
基于GaN基半导体材料的射频器件及集成电路
基于GaN基半导体材料的电力电子器件及应用

教育背景

2006-05--2011-07   佐治亚理工学院   博士
2001-09--2005-07   清华大学   本科

工作经历

   
工作简历
2015-01~现在, 中国科学院半导体研究所, 所长助理
2012-04~现在, 中国科学院半导体研究所, 研究员
2011-08~2012-02,美国高平(Kopin)半导体公司, 研发工程师
2006-05~2011-07,佐治亚理工学院, 博士
2001-09~2005-07,清华大学, 本科

教授课程

专题实践
半导体照明技术

专利与奖励

   
专利成果
( 1 ) 在蓝宝石衬底上制备微纳米图形的方法, 2013, 第 4 作者, 专利号: 201310196493.6
( 2 ) 一种金属纳米圆环的制备方法, 2013, 第 2 作者, 专利号: 201310144380.1
( 3 ) 一种无线充电系统, 2013, 第 2 作者, 专利号: 201310152822.7
( 4 ) Treatment of surface of semiconductor device involves forming etched surface from composition comprising nitride of group III element, 2010, 第 3 作者, 专利号: US2010072518-A1
( 5 ) 紫外发光二极管器件的制备方法, 2014, 第 1 作者, 专利号: 201410181967.4
( 6 ) 一种紫外发光二极管器件的制备方法, 2014, 第 1 作者, 专利号: 201410183522.X
( 7 ) 可杀菌消毒的多功能餐盒, 2014, 第 1 作者, 专利号: 201420060295.7
( 8 ) 多功能LED手电筒, 2014, 第 1 作者, 专利号: 201420060352.1
( 9 ) 一种具有极化诱导掺杂高阻层的GaN基HEMT结构及生长方法, 2018, 第 2 作者, 专利号: CN20140505205.5
( 10 ) 隐形切割制备正、倒和倒梯形台状衬底的LED芯片的方法, 2016, 第 4 作者, 专利号: CN201610825825.6
( 11 ) 一种LED芯片的图形化基板及其制备方法, 2016, 第 1 作者, 专利号: CN201611052405.5
( 12 ) 一种LED芯片的图形化基板结构及其制备方法, 2016, 第 2 作者, 专利号: CN201611234219.3
( 13 ) 一种体声波器件的制备方法, 2016, 第 2 作者, 专利号: CN201610751285.1
( 14 ) 金属上单晶氮化物薄膜制备方法及体声波谐振器, 2016, 第 2 作者, 专利号: CN201610797852.7
( 15 ) 单晶体声波器件及制备方法, 2016, 第 2 作者, 专利号: CN201611001710.1
( 16 ) 无掺杂剂的AlGaN基紫外发光二极管及制备方法, 2015, 第 2 作者, 专利号: CN201510308850.2
( 17 ) 一种紫外发光二极管器件的制备方法, 2017, 第 1 作者, 专利号: ZL201410183522.X
( 18 ) 增强型GaN HEMT的制备方法, 2017, 第 1 作者, 专利号: 201711220165.X
( 19 ) 半导体器件及其制备方法, 2017, 第 1 作者, 专利号: 201711217590.3
( 20 ) 一种带有LED杀菌降解有机物功能的手持洗衣装置, 2017, 第 2 作者, 专利号: 201710478045.3
( 21 ) 体声波谐振器及其底电极的制备方法, 2017, 第 2 作者, 专利号: 201710530035
( 22 ) 半导体激光器及其制备方法, 2017, 第 1 作者, 专利号: 201711346623.4
( 23 ) 高光出射效率的LED芯片及其制备方法, 2017, 第 2 作者, 专利号: 201710037478.5
( 24 ) 可提高LED出光效率的硅基反射圈、制备方法及LED器件, 2018, 第 1 作者, 专利号: 201810238823.6
( 25 ) GaN基LED器件, 2018, 第 1 作者, 专利号: 201820059394.1
( 26 ) GaN基LED器件及其制备方法, 2018, 第 1 作者, 专利号: 201810034773.X
( 28 ) 一种体声波谐振器的结构及其制备方法, 2018, 第 1 作者, 专利号: 201811295597.1
( 29 ) 声学滤波器与HEMT异构集成的结构及其制备方法, 2018, 第 1 作者, 专利号: 201811296447.2
( 30 ) 在侧向外延薄膜上自对准形成图形及制备外延材料的方法, 2019, 第 1 作者, 专利号: 201910192567.6
( 31 ) 在侧向外延薄膜上自对准图形及制备外延材料的方法, 2019, 第 1 作者, 专利号: 201910192567.6
( 32 ) 一种 AlGaN 基二极管及其制备方法, 2020, 第 1 作者, 专利号: 202010145389.4
( 33 ) 高显色指数及色温可调的高光通量白光激光照明装置, 2020, 第 3 作者, 专利号: 202010445714.9
( 34 ) p型栅增强型氮化镓基高迁移率晶体管结构及制作方法, 2020, 第 1 作者, 专利号: 202010262718.3

出版信息

   
发表论文
(1) Phosphor-converted laser-diode-based white lighting module with high luminous flux and color rendering index, Optics Express, 2020, 通讯作者
(2) Light extraction and Auger recombination in AlGaN-based ultraviolet light-emitting diodes, Photonics Technology Letters, 2020, 通讯作者
(3) The influence of anode trench geometries on electrical properties of ALGAN/GAN schottky barrier diodes, Electronics, 2020, 通讯作者
(4) Structural characterization of AlN (11-22) films prepared by sputtering and thermal annealing on m-plane sapphire substrates, Superlattices and Microstructures, 2020, 通讯作者
(5) AlGaN-based ultraviolet light-emitting diode on high-temperature annealed sputtered AlN template, Journal of Alloys and Compounds, 2019, 通讯作者
(6) Reducing stimulated emission threshold power density of AlGaN/AlN multiple quantum wells by nano-trench-patterned AlN template, Journal of Alloys and Compounds,, 2019, 通讯作者
(7) enhanced performance of An SAW devices with wave propagation along the <11-20> direction on c-plande sapphire substrate, Journal of Physics D: Applied Physics, 2019, 通讯作者
(8) AlGaN/GaN Hetero-Junction Bipolar Transistor with Selective-Area Grown Emitter and Improved Base Contact, IEEE Transactions on electron device, 2019, 通讯作者
(9) Method of the out-of-band rejection improvement of the AlN based surface acoustic wave filters, Ultrasonics, 2019, 通讯作者
(10) Crystal quality improvement of sputtered AlN film on sapphire substrate by high-temperature annealing, Journal of Materials Science: Materials in Electronics, 2018, 通讯作者
(11) Reducing stimulated emission threshold power density of AlGaN/AlN multiple quantum wells by nano-trench-patterned AlN template, Journal of Alloys and Compounds, 2018, 通讯作者
(12) Method of the out-of-band rejection improvement of the AlN based surface acoustic wave filters, Ultrasonics, 2018, 通讯作者
(13) Impact of device parameters on performance of one-port type SAW resonators on AlN/sapphire, Journal of Micromechanics and Microengineering, 2018, 第 3 作者
(14) AlGaN-based ultraviolet light-emitting diodes on sputter-deposited AlN templates with epitaxial AlN/AlGaN superlattices, Superlattices and Microstructures, 2017, 通讯作者
(15) Light extraction enhancement of AlGaN-based ultraviolet light-emitting diodes by substrate sidewall roughening, Applied Physics Letters, 2017, 通讯作者
(16) Deep-ultraviolet stimulated emission from AlGaN/AlN multiplequantum-wells on nano-patterned AlN/sapphire templates with reduced threshold power density, Journal of Alloys and Compounds, 2017, 通讯作者
(17) The effect of AlN/AlGaN superlattices on crystal and optical properties of AlGaN epitaxial layers, Journal of Semiconductors, 2017, 通讯作者
(18) Sapphire substrate sidewall shaping of deep ultraviolet light-emitting diodes by picosecond laser multiple scribing, Applied Physics Express, 2017, 通讯作者
(19) 具有高开启/ 关断电流比的Al2O3 / AlGaN/ GaN金属氧化物半导体高电子迁移率晶体管, Al2O3 / AlGaN / GaN MOS-HEMT with High On / Off Drain Current Ratio, CHINESE JOURNAL OF LUMINESCENCE, 2016, 通讯作者
(20) 具有高阈值电压和大栅压摆幅的常关型槽栅AlGaN/GaN金属氧化物半导体高电子迁移率晶体管, High-threshold-voltage Normally-off Recessed MOS-gate AlGaN/GaN HEMT with large gate swing, CHINESE JOURNAL OF LUMINESCENCE, 2016, 通讯作者
(21) High-resistance GaN-based buffer layers grown by a polarization doping method, physica status solidi (c), 2016, 第 2 作者
(22) AlGaN/GaN High Electron Mobility Transistors with Selective Area Grown p-GaN Gates, Journal of Semiconductors, 2016, 第 4 作者
(23) Tailoring of Energy Band in Electron-Blocking Structure Enhancing the Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes, IEEE Photonics Journal, 2016, 第 6 作者
(24) Improved Crystalline Quality of AlN by Epitaxial Lateral Overgrowth Using Two-Phase Growth Method for Deep-Ultraviolet Stimulated Emission, IEEE Photonics Journal, 2016, 第 3 作者
(25) Effect of AlN Buffer on the Properties of AlN Films Grown on Sapphire Substrate by MOCVD, Wide Bandgap Semiconductors China (SSLChina: IFWS), 2016 13th China International Forum on Solid State Lighting: International Forum on, 2016, 通讯作者
(26) Enhancement of Light Extraction on AlGaN-based Deep-Ultraviolet Light-Emitting Diodes Using a Sidewall Reflection Method, Wide Bandgap Semiconductors China (SSLChina: IFWS), 2016 13th China International Forum on Solid State Lighting: International Forum on, 2016, 通讯作者
(27) Deep ultraviolet lasing from AlGaN multiple-quantum-well structures, Phys. Status Solidi C, 2016, 第 4 作者
(28) Formation and characteristics of AlGaN-based three-dimensional hexagonal nanopyramid semi-polar multiple quantum wells, Nanoscale, 2016, 通讯作者
(29) Stimulated emission at 272 nm from an AlxGa1xN-based multiple-quantum-well laser with two-step etched facets, RSC Advances, 2016, 通讯作者
(30) AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE, Journal of Crystal Growth, 2015, 第 3 作者
(31) Development of AlGaN-based deep ultraviolet light-emitting diodes and laser diodes, IEEE, 2015, 通讯作者
(32) 氮化物深紫外LED研究新进展, 中国科学: 物理学 力学 天文学, 2015, 第 4 作者
(33) Stimulated emission at 288 nm from silicon doped AlGaN-based multiple-quantum-well laser, Optics Express, 2015, 第 3 作者
(34) AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency, Journal of Crystal Growth, 2014, 通讯作者
(35) Optical properties of nanopillar AlGaN/GaN MQWs for ultraviolet light-emitting diodes, Optics Express, 2014, 第 3 作者
(36) The effect of delta-doping on Si-doped Al rich n-AlGaN on AlN template grown by MOCVD, physica status solidi (c), 2014, 第 3 作者
(37) Influence of AlGaN Electron Blocking Layer on Modulation Bandwidth of GaN-Based Light Emitting Diodes, ECS Solid State Letters, 2014, 第 4 作者
(38) Enhanced performance of solar cells with optimized surface recombination and efficient photon capturing via anisotropic-etching of black silicon, Applied Physics Letters, 2014, 通讯作者
(39) 282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates, Appl. Phys. Lett., 2013, 第 4 作者
(40) Working toward high-power GaN/InGaN heterojunction bipolar transistors, Semicond. Sci. Technol., 2013, 通讯作者
(41) GaN/InGaN heterojunction bipolar transistors with ultra-high d.c. power density (3MW/cm2), Phys. Status Solidi A, 2012, 第 2 作者
(42) NpN-GaN/InxGa1-xN/GaN heterojunction bipolar transistor on free-standing GaN substrate, Appl. Phys. Lett., 2011, 第 4 作者
(43) GaN/InGaN heterojunction bipolar transistors with fT 5 GHz, IEEE Electron Device Lett., 2011, 通讯作者
(44) High-performance GaN/InGaN double heterojunction bipolar transistors with power density 240 kW/cm2, Phys. Stat. Sol. (c), 2011, 第 1 作者
(45) Effects of a step-graded AlxGa1-xN electron blocking layer in InGaN-based laser diodes, J. Appl. Phys. , 2011, 第 1 作者
(46) Performance Enhancement of InGaN-based Laser Diodes Using a Step-Graded AlxGa1-xN Electron Blocking Layer, Int. J. High Speed Electron. Syst., 2011, 第 1 作者
(47) Growth and characterization of NpN heterojunction bipolar transistors with In0.03Ga0.97N and In0.05Ga0.95N bases, J. Cryst. Growth, 2011, 通讯作者
(48) Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapor deposition, J. Cryst. Growth, 2011, 第 2 作者
(49) High-current-gain GaN/InGaN double heterojunction bipolar transistors, IEEE Trans. Electron Devices, 2010, 第 2 作者
(50) High-performance GaN/InGaN heterojunction bipolar transistors using a direct-growth approach, Phys. Stat. Sol. (c) , 2010, 第 3 作者
(51) Threshold voltage change by InxAl1-xN in InAlN/GaN heterostructure field-effect transistors for depletion- and enhancement-mode operations, Appl. Phys. Lett., 2010, 第 4 作者
(52) Surface leakage in GaN/InGaN double heterojunction bipolar transistors, IEEE Electron Device Lett., 2009, 第 4 作者
(53) Geiger-mode operation of GaN avalanche photodiodes grown on GaN substrates, IEEE Photon. Technol. Lett., 2009, 第 3 作者
(54) Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates, Appl. Phys. Lett., 2009, 第 1 作者
(55) Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes, J. Cryst. Growth, 2008, 通讯作者
(56) GaN ultraviolet avalanche photodiode fabricated on free-standing bulk GaN substrates, Phys. Stat. Sol. (c), 2008, 第 1 作者
(57) Surface treatment on the growth surface of semi-insulating GaN bulk substrates for III-nitride heterostructure field-effect transistors, Phys. Stat. Sol. (c), 2008, 第 3 作者
(58) III-nitride heterostructure field effect transistors grown on semi-insulating GaN substrate without interface charge, Appl. Phys. Lett., 2008, 第 4 作者
(59) GaN ultraviolet avalanche photodiodes grown on 6H-SiC substrates with SiN passivation, Electron. Lett., 2008, 第 3 作者
(60) AlxGa1-xN ultraviolet avalanche photodiodes grown on GaN substrates, IEEE Photon. Technol. Lett., 2007, 第 4 作者
(61) Performance of deep ultraviolet GaN avalanche photodiodes grown by MOCVD, IEEE Photon. Technol. Lett., 2007, 第 2 作者
发表著作
( 1 ) 中国新材料热点领域产业发展战略, 科学技术文献出版社, 2015-05, 第 3 作者

科研活动

   
科研项目
( 1 ) ****青年项目, 主持, 国家级, 2012-04--2015-03
( 2 ) 高铝组分氮化物材料制备技术研究, 主持, 国家级, 2014-01--2016-12
( 3 ) GaN基HBT射频性能提升的研究, 主持, 国家级, 2014-01--2017-12
( 4 ) 高效GaN基绿光LED研究, 参与, 国家级, 2014-01--2017-12
( 5 ) AlGaN基紫外激光二极管研究, 参与, 国家级, 2014-01--2017-12
( 6 ) 深紫外LED材料与芯片自主研制, 主持, 省级, 2016-01--2017-12
( 7 ) 用于中等功率通用电源的高效率GaN基电力电子技术, 主持, 国家级, 2017-07--2020-12
( 8 ) 氮化镓基高空穴迁移率晶体管材料与器件研究, 主持, 国家级, 2019-01--2019-12
( 9 ) 太赫兹微系统基础问题, 主持, 国家级, 2018-01--2021-11
参与会议
(1)AlGaN-based ultraviolet light-emitting diodes on high-temperature annealed sputtered AlN on sapphire   2018-11-11
(2)Ultra-high-power characteristics of GaN/InGaN heterojunction bipolar transistors   3. Yi-Che Lee, Yun Zhang, Zachary M. Lochner, Hee Jin Kim, Jae-Hyun Ryou, Russell D. Dupuis, and Shyh-Chiang Shen   2011-07-15
(3)Low-knee-voltage GaN/InGaN heterojunction bipolar transistors with collector current density 20 kA/cm2   5. Yun Zhang, Yi-Che Lee, Zachary Lochner, Hee Jin Kim, Jae-Hyun Ryou, Russell D. Dupuis, and Shyh-Chiang Shen   2011-05-17
(4)Direct-growth GaN/InGaN double heterojunction bipolar transistors on sapphire substrates with current gain 100 and JC 7.2 kA/cm2 and power density 240 kW/cm2   Yun Zhang, Yi-Che Lee, Zachary Lochner, Hee Jin Kim, Suk Choi, Jae-Hyun Ryou, Russell D. Dupuis, and Shyh-Chiang Shen   2010-09-21
(5)A surface treatment technique for III-N device fabrication   Y. Zhang, M. Britt, J.-H. Ryou, R. D. Dupuis, and S.-C. Shen   2008-04-15
(6)GaN ultraviolet avalanche photodiodes fabricated on free-standing bulk GaN substrates   Y. Zhang, D. Yoo, J.-B. Limb, J. H. Ryou, R. D. Dupuis, and S.-C. Shen   2007-09-24