080903-微电子学与固体电子学

半导体材料与器件

2001-09--2004-06   中科院半导体所   博士
1998-09--2001-06   武汉理工大学   硕士
1994-09--1998-06   武汉理工大学   本科

   

2010-05~现在, 中科院苏州纳米技术与纳米仿生所, 研究员
2006-10~2010-04,佐治亚理工学院, 博士后
2004-07~2006-09,北京工业大学, 助理研究员
2001-09~2004-06,中科院半导体所, 博士
1998-09~2001-06,武汉理工大学, 硕士
1994-09~1998-06,武汉理工大学, 本科

   

（1） Influence of substrate surface defects on the homoepitaxial growth of GaN (0001) by metalorganic vapor phase epitaxy, Journal of Crystal Growth, 2015, 通讯作者
（2） Abnormal InGaN growth behavior in indium-desorption regime in metalorganic chemical vapor deposition, Journal of Crystal Growth, 2015, 第 3 作者
（3） Realization of InGaN laser diodes above 500 nm by growth optimization of the InGaN/GaN active region, Applied Physics Express, 2014, 第 1 作者
（4） Remarkably reduced efficiency droop by using staircase thin InGaN quantum barriers in InGaN based blue light emitting diodes, APPLIED PHYSICS LETTERS, 2014, 通讯作者
（5） Identification of Degradation Mechanisms Based on Thermal Characteristics of InGaN/GaN Laser Diodes, IEEE J. Sel Topics in Quantum Electronics, 2014, 第 4 作者
（6） Characteristics of InGaN-Based superluminescent diodes with one sided oblique cavity facet, Chinese Science Bulletin, 2014, 第 3 作者
（7） Characteristics of InGaN-Based superluminescent diodes with one sided oblique cavity facet, Chinese Science Bulletin, 2014, 第 3 作者
（8） Hillock Formation and Suppression on Homoepitaxial GaN Layers Grown by Metalorganic Vapor Phase Epitaxy, J Crystal Growth, 2013, 通讯作者
（9） Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots, J Appl. Phys., 2013, 通讯作者
（10） Performance enhancement of GaN-based laser diodes with prestrained growth, IEEE Photon. Technol. Lett., 2013, 通讯作者
（11） Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth, Appl. Phys. Lett., 2013, 通讯作者
（12） Saturation of the junction voltage in GaN-based laser diodes, Appl. Phys. Lett., 2013, 通讯作者
（13） High efficient GaN-based laser diodes with tunnel junction, Appl.Phys.Lett., 2013, 通讯作者
（14） Design considerations for GaN-based blue laser diodes with InGaN upper waveguide layer, IEEE J. Sel. Top. Quantum Electron., 2013, 通讯作者
（15） Improvement of InGaN-LED Performance by Optimizing the Patterned Sapphire Substrate Shapes, Chinese Physics B, 2012, 第 2 作者
（16） Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN, Chinese Physics Letter, 2012, 第 4 作者
（17） Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapor deposition, Journal of Crystal Growth, 2011, 第 1 作者
（18） High-efficiency InGaN-based LEDs grown on patterned sapphire substrates, Optics express, 2011, 第 2 作者
（19） Effect of Patterned Sapphire Substrate Shape on Light Output Power of GaN-Based LEDs, IEEE Photonics Technology Letter, 2011, 第 2 作者
（20） Effects of a step-graded AlxGa1-xN electron blocking layer in InGaN-based laser diodes, Journal of Applied Physics , 2011, 第 3 作者
（21） Green light-emitting diodes with p-InGaN:Mg grown on c-plane sapphire and GaN substrates, phys. stat. sol., 2009, 第 1 作者
（22） Barrier effect on hole transport and carrier distribution in InGaN/GaN multiple quantum well visible light-emitting diodes, Applied Physics Letter, 2008, 第 1 作者
（23） Blue light-emitting diodes grown on free-standing a-plane GaN substrates, Applied Physics Letter, 2008, 第 1 作者
（24） III-nitride heterostructure field effect transistors grown on semi-insulating GaN substrate without interface charge, Applied Physics Letter, 2008, 第 1 作者
（25） Surface morphology control of green LEDs with p-InGaN layers grown by metalorganic chemical vapor deposition, Journal of Crystal Growth, 2008, 第 1 作者
（26） Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD, Journal of Crystal Growth, 2006, 第 1 作者
（27） Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows, Journal of Crystal Growth, 2004, 第 1 作者
（28） Investigations on V-defects in quaternary AlInGaN epilayers, Applied Physics Letter, 2004, 第 1 作者

   

（ 1 ） 大功率InGaN基LED新型外延结构研究, 负责人, 国家任务, 2011-01--2013-12
（ 2 ） 高性能微型激光引擎产业化关键技术研发, 负责人, 国家任务, 2013-01--2015-12
（ 3 ） 基于半导体激光器的下一代微投影显示全产业链关键技术开发, 负责人, 地方任务, 2013-04--2016-04