基本信息
赵德刚  男  博导  中国科学院半导体研究所
email: dgzhao@red.semi.ac.cn
address: 北京市清华东路甲35号光电子研发中心
postalCode: 100083

招生信息

   
招生专业
080903-微电子学与固体电子学
招生方向
半导体光电子材料与器件

教育背景

1997-09--2000-06   中国科学院半导体研究所   博士
1994-09--1997-04   电子科技大学   硕士
1990-09--1994-06   电子科技大学   学士

工作经历

   
工作简历
2000-07~现在, 中国科学院半导体研究所, 研究员
1997-09~2000-06,中国科学院半导体研究所, 博士
1994-09~1997-04,电子科技大学, 硕士
1990-09~1994-06,电子科技大学, 学士
社会兼职
2011-01-01-今,中国电子学会高级会员,

教授课程

宽禁带半导体光电子材料与器件
材料科学与工程讲座
专题实践

专利与奖励

   
奖励信息
(1) 万人计划科技领军人才, 国家级, 2019
(2) 科技部创新人才推进计划-中青年科技创新领军人才, 部委级, 2018
(3) 享受国务院政府特殊津贴, , 其他, 2018
(4) 国家百千万人才工程, 部委级, 2017
(5) 中国青年科技奖, 部委级, 2011
专利成果
( 1 ) 低电阻率低温P型铝镓氮材料的制备方法, 2017, 第 2 作者, 专利号: CN104201256B

( 2 ) 一种GaN基紫外激光器结构及制备方法, 2017, 第 2 作者, 专利号: 201710472653.3

( 3 ) InGaN量子点的外延结构及生长方法, 2017, 第 2 作者, 专利号: CN104538524B

( 4 ) 绿光LED外延层结构及生长方法, 2017, 第 2 作者, 专利号: CN104393132B

( 5 ) 减小GaN基蓝紫光端发射激光器电子泄漏的方法, 2017, 第 2 作者, 专利号: CN103956653B

( 6 ) 高密度高均匀InGaN量子点结构及生长方法, 2017, 第 2 作者, 专利号: CN104157759B

( 7 ) 基于二维岛的InGaN量子点外延结构及制备方法, 2015, 第 2 作者, 专利号: 201510522409.4

( 8 ) AlxGa1-xN基紫外探测器及制备方法, 2015, 第 2 作者, 专利号: 201510967933.2

( 9 ) 绿光LED芯片外延层的结构及生长方法, 2015, 第 2 作者, 专利号: 201510309152.4

( 10 ) InGaN太阳能电池及其制作方法, 2015, 第 2 作者, 专利号: ZL. 201210319268.2

( 11 ) InGaN量子点的外延结构及生长方法, 2014, 第 2 作者, 专利号: 201410784663.7

( 12 ) 制备低比接触电阻率的p-GaN欧姆接触的方法, 2014, 第 2 作者, 专利号: 201410652524.9

( 13 ) 降低Ni/Au与p-GaN欧姆接触的比接触电阻率的方法, 2014, 第 2 作者, 专利号: 201410652670.1

( 14 ) 绿光LED外延层结构及生长方法, 2014, 第 2 作者, 专利号: 201410636516.5

( 15 ) InGaN/AlInGaN多量子阱太阳能电池结构, 2014, 第 2 作者, 专利号: 201410592387.4

( 16 ) 同时降低发散角和阈值电流的激光器的制备方法, 2014, 第 2 作者, 专利号: 201410563124.0

( 17 ) 抑制GaAs基激光器高阶模的方法, 2014, 第 2 作者, 专利号: 201410564609.1

( 18 ) 降低电子泄漏的砷化镓激光器的制作方法, 2014, 第 2 作者, 专利号: 201410563125.5

( 19 ) 一种具有平面型发射阴极的纳米真空三极管及其制作方法, 2014, 第 2 作者, 专利号: 201410504100.8

( 20 ) 一种激光器及其制作方法, 2014, 第 2 作者, 专利号: 201410490395.8

( 21 ) 含有低温插入层的铟镓氮/氮化镓多量子阱太阳能电池, 2014, 第 2 作者, 专利号: 201410426193.7

( 22 ) 低电阻率低温P型铝镓氮材料的制备方法, 2014, 第 2 作者, 专利号: 201410426219.8

( 23 ) 高密度高均匀InGaN量子点结构及生长方法, 2014, 第 2 作者, 专利号: 201410412107.7

( 24 ) 一种GaN复合薄膜及在Si衬底上形成GaN复合薄膜的方法, 2014, 第 2 作者, 专利号: 201410337785.1

( 25 ) 测量肖特基势垒高度的装置和方法, 2014, 第 2 作者, 专利号: ZL. 201210209958.2

( 26 ) 高电阻低位错GaN薄膜及制备方法, 2014, 第 2 作者, 专利号: 201410089597.1

( 27 ) InGaN太阳能电池及其制作方法, 2012, 第 2 作者, 专利号: 201210319268.2

( 28 ) 氮化镓基雪崩型探测器及其制作方法, 2012, 第 2 作者, 专利号: ZL.200910077383.1

( 29 ) 测量肖特基势垒高度的装置和方法, 2012, 第 2 作者, 专利号: Z201210209958.2

( 30 ) 一种紫外红外双色探测器及制作方法, 2012, 第 2 作者, 专利号: ZL.201010183403.6

( 31 ) 一种测量直接带隙半导体材料禁带宽度的装置和方法 , 2012, 第 2 作者, 专利号: Z201210461734.0

出版信息

   
发表论文
(1) InGaN surface morphology evolution investigated by atomic force microscope with power spectral density analysis, JOURNAL OF CRYSTAL GROWTH, 2023, 第 7 作者
(2) Study on the luminescence mechanism influenced by the inhomogeneous growth of InGaN/GaN multiple quantum wells, RESULTS IN PHYSICS, 2023, 第 3 作者
(3) Investigation into the MOCVD Growth and Optical Properties of InGaN/GaN Quantum Wells by Modulating NH3 Flux, CRYSTALS, 2023, 通讯作者
(4) A Study on the Increase of Leakage Current in AlGaN Detectors with Increasing Al Composition, NANOMATERIALS, 2023, 通讯作者
(5) Low threshold current density and high power InGaN-based blue-violet laser diode with an asymmetric waveguide structure, OPTICS EXPRESS, 2023, 第 6 作者
(6) Influence of the lattice parameter of the AlN buffer layer on the stress state of GaN film grown on(111)Si, Influence of the lattice parameter of the AlN buffer layer on the stress state of GaN film grown on (111) Si, CHINESE PHYSICS B, 2023, 通讯作者
(7) Influence of growth interruption on the morphology and luminescence properties of AlGaN/GaN ultraviolet multi-quantum wells, Optics Express, 2023, 通讯作者
(8) Investigation of the Indium migration mechanism in the growth of InGaN quantum wells by MOCVD, JOURNAL OF CRYSTAL GROWTH, 2023, 第 5 作者
(9) Study the influence mechanism of In/Ga ratio on InGaN waveguide layers during epitaxial growth, JOURNAL OF ALLOYS AND COMPOUNDS, 2022, 通讯作者
(10) Transient behavior of AlGaN photoluminescence induced by carbon-related defect reactions, OPTICS EXPRESS, 2022, 通讯作者
(11) The role of InGaN quantum barriers in improving the performance of GaN-based laser diodes, OPTICSANDLASERTECHNOLOGY, 2022, 通讯作者
(12) The direct evidence of the composition pulling effect and its role in InGaN multiple quantum wells, JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T, 2022, 通讯作者
(13) Enhancing the efficiency of GaN-based laser diodes by the designing of a p-AlGaN cladding layer and an upper waveguide layer, OPTICAL MATERIALS EXPRESS, 2021, 通讯作者
(14) 碳杂质对p-GaN电阻率的补偿作用研究, Compensation Effect of Carbon Impurities on the Resistivity of p-GaN, 中国激光, 2021, 第 8 作者
(15) Influence of the bias voltage on the photoluminescence intensity and spectral responsivity of the GaN Schottky barrier photodetector, OPTICAL MATERIALS EXPRESS, 2021, 第 3 作者
(16) Realization low resistivity of high AlN mole fraction Si-doped AlGaN by suppressing the formation native vacancies, JOURNAL OF CRYSTAL GROWTH, 2021, 
(17) The influence of temperature and TMGa flow rate on the quality of p-GaN, AIP ADVANCES, 2021, 通讯作者
(18) Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells, NANOMATERIALS, 2021, 通讯作者
(19) Investigation on the leakage current characteristics of large size GaN diodes, AIP ADVANCES, 2021, 
(20) The influence of material quality of lower InGaN waveguide layer on the performance of GaN-based laser diodes, APPLIED SURFACE SCIENCE, 2021, 通讯作者
(21) Performance improvement of GaN-based blue and ultraviolet double quantum well laser diodes by using stepped-doped lower waveguide, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 通讯作者
(22) A MOVPE method for improving InGaN growth quality by pre-introducing TMIn, A MOVPE method for improving InGaN growth quality by pre-introducing TMIn, 中国物理B:英文版, 2021, 通讯作者
(23) Adjustment of Al atoms migration ability and its effect on the surface morphology of AlN grown on sapphire by metalorganic chemical vapor deposition, Semiconductor Science and Technology, 2021, 通讯作者
(24) The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H-2/NH3 Mixed Gas for Improving Structural and Optical Properties, NANOSCALE RESEARCH LETTERS, 2021, 通讯作者
(25) GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature, Journal of Semiconductors, 2021, 通讯作者
(26) Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers, JOURNAL OF APPLIED PHYSICS, 2021, 
(27) Characteristics of InGaN-based green laser diodes with additional InGaN hole reservoir layer, VACUUM, 2021, 通讯作者
(28) Improving the homogeneity and quality of InGaN/GaN quantum well exhibiting high In content under low TMIn flow and high pressure growth, APPLIED SURFACE SCIENCE, 2021, 通讯作者
(29) Stepped upper waveguide layer for higher hole injection efficiency in GaN-based laser diodes, OPTICS EXPRESS, 2021, 通讯作者
(30) Influences of gallium and nitrogen partial pressure on step-bunching and step-meandering morphology of InGaN quantum barrier layer, MATERIALS TODAY COMMUNICATIONS, 2021, 通讯作者
(31) The influence of residual GaN on two-step-grown GaN on sapphire, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 通讯作者
(32) Role of hydrogen treatment during the material growth in improving the photoluminescence properties of InGaN/GaN multiple quantum wells, JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 通讯作者
(33) Transient behaviours of yellow and blue luminescence bands in unintentionally doped GaN, OPTICS EXPRESS, 2021, 通讯作者
(34) New mechanisms of cavity facet degradation for GaN-based laser diodes, JOURNAL OF APPLIED PHYSICS, 2021, 通讯作者
(35) Monotonic variation in carbon-related defects with Fermi level in different conductive types of GaN, AIP ADVANCES, 2021, 第 3 作者
(36) Suppression the formation of V-pits in InGaN/ GaN multi-quantum well growth and its effect on the performance of GaN based laser diodes, JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 
(37) Comparative Study on the Luminescence Properties of Violet Light-Emitting InGaN/GaN Multiple Quantum Wells with Different Barrier Thickness, JOURNAL OF ELECTRONIC MATERIALS, 2020, 第 3 作者
(38) Achieving homogeneity of InGaN/GaN quantum well by well/barrier interface treatment, APPLIED SURFACE SCIENCE, 2020, 通讯作者
(39) Fabrication of high quantum efficiency p-i-n AlGaN detector and optimization of p-layer and i-layer thickness, MATERIALS RESEARCH EXPRESS, 2020, 通讯作者
(40) Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN, NANOSCALE RESEARCH LETTERS, 2020, 通讯作者
(41) Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness, NANOSCALE RESEARCH LETTERS, 2020, 通讯作者
(42) 光场分布对GaN基绿光激光器的影响, Influence of Optical Field Distribution on GaN-Based Green Laser Diodes, 中国激光, 2020, 第 2 作者
(43) Improving optical and electrical properties of InGaN-based green laser diodes by graded-compositional waveguide structure, OPTICAL MATERIALS, 2020, 通讯作者
(44) Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift, Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift*, CHINESE PHYSICS B, 2020, 通讯作者
(45) Performance deterioration of GaN-based laser diode by V-pits in the upper waveguide layer, NANOPHOTONICS, 2020, 通讯作者
(46) 高增益GaN基PIN雪崩二极管的制备及p-GaN层载流子浓度的估算, Fabrication of High Gain GaN Based PIN Avalanche Diode and Estimation of p-GaN Layer Carrier Concentration, 发光学报, 2020, 第 6 作者
(47) Performance Improvement of GaN Based Laser Diode Using Pd/Ni/Au Metallization Ohmic Contact, COATINGS, 2019, 第 9 作者
(48) Design and fabrication of double AlGaN/GaN distributed Bragg reflector stack mirror for the application of GaN-based optoelectronic devices, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 第 9 作者
(49) Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process, NANOSCALE RESEARCH LETTERS, 2019, 通讯作者
(50) Influence of small indium content in quantum barriers on the luminescence properties of InGaN/InGaN double-quantum wells, OPTICAL MATERIALS EXPRESS, 2019, 通讯作者
(51) Enhance the electroluminescence efficiency of InGaN/GaN multiple quantum wells by optimizing the growth temperature of GaN barriers, JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 通讯作者
(52) Effects of photogenerated carriers in GaN layers on the photoluminescence characteristics of violet light-emitting InGaN/GaN multiple quantum wells, MATERIALS RESEARCH EXPRESS, 2019, 通讯作者
(53) Room-temperature continuous-wave operation of GaN-based blue-violet laser diodes with a lifetime longer than 1000 h, JOURNAL OF SEMICONDUCTORS, 2019, 通讯作者
(54) Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence, NANOSCALE RESEARCH LETTERS, 2019, 通讯作者
(55) Different influence of InGaN lower waveguide layer on the performance of GaN-based violet and ultraviolet laser diodes, SUPERLATTICES AND MICROSTRUCTURES, 2019, 通讯作者
(56) Suppression of optical feld leakage in GaN-based green laser diode using graded-indium n-InxGa1-xN lower waveguide, Superlattices and Microstructures, 2019, 通讯作者
(57) The compensation role of deep defects in the electric properties of lightly Si-doped GaN, JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 
(58) III-nitride based ultraviolet laser diodes, JOURNAL OF SEMICONDUCTORS, 2019, 通讯作者
(59) Effect of Mg doping concentration of electron blocking layer on the performance of GaN-based laser diodes, APPLIED PHYSICS B-LASERS AND OPTICS, 2019, 
(60) Effect of dual-temperature-grown InGaN/GaN multiple quantum wells on luminescence characteristics, JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 通讯作者
(61) Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer, OPTICS AND LASER TECHNOLOGY, 2019, 
(62) Suppression of optical field leakage in GaN-based green laser diode using graded-indium n-InxGa1-xN lower waveguide, SUPERLATTICES AND MICROSTRUCTURES, 2019, 通讯作者
(63) Improvement of thermal stability of InGaN/GaN multiple-quantum-well by reducing the density of threading dislocations, OPTICAL MATERIALS, 2018, 
(64) Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers, IEEE PHOTONICS JOURNAL, 2018, 通讯作者
(65) Suppression of electron and hole overflow in gan-based near-ultraviolet laser diodes, CHINESE PHYSICS B, 2018, 通讯作者
(66) Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AIGaN buffer and SiNx interlayer, SUPERLATTICES AND MICROSTRUCTURES, 2018, 第 10 作者
(67) Energy band tilt in ultra-thin InGaN film affected by the surface adsorption and desorption, APPLIED SURFACE SCIENCE, 2018, 通讯作者
(68) Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio, APPLIED PHYSICS LETTERS, 2018, 第 8 作者
(69) Anomalous electroluminescent blue-shift behavior induced by well widths variance and localization effect in ingan/gan multi-quantum wells, OPTICS EXPRESS, 2018, 通讯作者
(70) Influence of hydrogen impurity on the resistivity of low temperature grown p-AlxGa1-xN layer (0.08 <= x <= 0.104), SUPERLATTICES AND MICROSTRUCTURES, 2018, 通讯作者
(71) Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of ingan/gan multiple quantum wells, OPTICS EXPRESS, 2018, 通讯作者
(72) Resistivity reduction of low temperature grown p-al0.09ga0.91n by suppressing the incorporation of carbon impurity, AIP ADVANCES, 2018, 
(73) Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN, NANOMATERIALS, 2018, 通讯作者
(74) Influence of carrier gas H2 flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures, Influence of carrier gas H2 flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures, 中国物理B:英文版, 2018, 第 3 作者
(75) Study on the structural, optical, and electrical properties of the yellow light-emitting diode grown on free-standing (0001) GaN substrate, SUPERLATTICES AND MICROSTRUCTURES, 2018, 第 8 作者
(76) Influence of dislocation density and carbon impurities in i-GaN layer on the performance of Schottky barrier ultraviolet photodetectors, MATERIALS RESEARCH EXPRESS, 2018, 第 5 作者
(77) Simulation and fabrication of N-polar GaN-based blue-green light-emitting diodes with p-type AlGaN electron blocking layer, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 第 8 作者
(78) Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN, NANOMATERIALS, 2018, 通讯作者
(79) 垒层厚度对InGaN/GaN多量子阱电注入发光性能的影响及机理, Barrier Thickness Designing of InGaN/GaN Multiple Quantum Well for Electroluminescence, 发光学报, 2018, 第 4 作者
(80) Influence of carrier gas H_2 flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures, CHINESE PHYSICS B, 2018, 通讯作者
(81) Influence of in doping in GaN barriers on luminescence properties of InGaN/GaN multiple quantum well LEDs, SUPERLATTICES AND MICROSTRUCTURES, 2018, 通讯作者
(82) Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms, SUPERLATTICES AND MICROSTRUCTURES, 2018, 
(83) Deep levels induced optical memory effect in thin InGaN film, AIP ADVANCES, 2018, 
(84) The influence of well thickness on the photoluminescence properties of blue-violet light emitting InGaN/GaN multiple quantum wells, SUPERLATTICES AND MICROSTRUCTURES, 2018, 第 5 作者
(85) Improvement of slope efficiency of GaN-Based blue laser diodes by using asymmetric MQW and InxGa1-xN lower waveguide, JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 通讯作者
(86) Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer, SUPERLATTICES AND MICROSTRUCTURES, 2018, 
(87) Performance enhancement of the gan-based laser diode by using an unintentionally doped gan upper waveguide, JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 通讯作者
(88) Influence of InGaN layer growth temperature on luminescence properties of InGaN/GaN multiple quantum wells, MATERIALS RESEARCH EXPRESS, 2018, 通讯作者
(89) The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells, SUPERLATTICES AND MICROSTRUCTURES, 2018, 通讯作者
(90) Growth of AlGaN-based multiple quantum wells on SiC substrates, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 第 8 作者
(91) The property optimization of n-GaN films grown on n-SiC substrates by incorporating a SiNx interlayer, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2017, 第 6 作者
(92) Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells, IEEE JOURNAL OF PHOTOVOLTAICS, 2017, 通讯作者
(93) Different influences of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes, Different influences of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes, CHINESE PHYSICS B, 2017, 通讯作者
(94) Electroluminescence property improvement by adjusting quantum wells' position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes, AIP ADVANCES, 2017, 
(95) Performance Improvement of GaN-Based Violet Laser Diodes, Performance Improvement of GaN-Based Violet Laser Diodes, 中国物理快报:英文版, 2017, 第 1 作者
(96) The residual C concentration control for low temperature growth p-type GaN, CHINESE PHYSICS B, 2017, 通讯作者
(97) Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide, Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide, CHINESE PHYSICS B, 2017, 通讯作者
(98) Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2017, 通讯作者
(99) Influence of residual carbon impurities in a heavily Mg-doped GaN contact layer on an Ohmic contact, APPLIED OPTICS, 2017, 通讯作者
(100) Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes, JOURNAL OF SEMICONDUCTORS, 2017, 通讯作者
(101) Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region, OPTICS EXPRESS, 2017, 
(102) Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3, SUPERLATTICES AND MICROSTRUCTURES, 2017, 
(103) Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes, PHYSSTATUSSOLIDIA, 2017, 第 2 作者
(104) Increase of photogenerated carriers in thick quantum wells in InGaN solar cells verified by laser-assisted capacitance-voltage measurement, MATERIALS RESEARCH EXPRESS, 2017, 通讯作者
(105) The growth optimization and mechanism of N-polar GaN films with an in situ porous SiNx interlayer, CRYSTENGCOMM, 2017, 第 9 作者
(106) Analysis of localization effect in blue-violet light mitting InGaN/GaN multiple quantum wells with different well widths, Chinese Physics B, 2017, 通讯作者
(107) Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD, MATERIALS TECHNOLOGY, 2017, 
(108) Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold, APPLIED OPTICS, 2017, 
(109) Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes, IEEE PHOTONICS JOURNAL, 2017, 通讯作者
(110) Comparative study on the InGaN multiple-quantum-well solar cells assisted by capacitance-voltage measurement with additional laser illumination, JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 通讯作者
(111) Performance Improvement of GaN-Based Violet Laser Diodes, Performance Improvement of GaN-Based Violet Laser Diodes, CHINESE PHYSICS LETTERS, 2017, 通讯作者
(112) New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode, OPTICS AND LASER TECHNOLOGY, 2017, 通讯作者
(113) Different annealing temperature suitable for different Mg doped P-GaN, SUPERLATTICES AND MICROSTRUCTURES, 2017, 
(114) Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide, Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide, 中国物理B:英文版, 2017, 第 2 作者
(115) Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes, SCIENTIFIC REPORTS, 2017, 
(116) GaN基p-i-n和肖特基紫外探测器的响应光谱及暗电流特性, Spectral Response and Dark Current of p-i-n Type and Schottky Barrier Ga N-based Ultraviolet Detectors, 发光学报, 2017, 第 5 作者
(117) Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer, JOURNAL OF CRYSTAL GROWTH, 2017, 通讯作者
(118) Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials, CHINESE PHYSICS B, 2017, 通讯作者
(119) Different influence of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes, Chinese Physics B, 2017, 通讯作者
(120) Suppression of optical field leakage to GaN substrate in GaN-based green laser diode, SUPERLATTICES AND MICROSTRUCTURES, 2017, 通讯作者
(121) Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths, CHINESE PHYSICS B, 2017, 通讯作者
(122) InGaN/GaN量子阱垒层和阱层厚度对GaN基激光器性能的影响及机理, Barrier and well thickness designing of InGaN/GaN multiple quantum well for better performances of GaN based laser diode, ACTA PHYSICA SINICA, 2016, 通讯作者
(123) Investigation of breakdown mechanism during field emission process of AlN thin film microscopic cold cathodee, JOURNALOFVACUUMSCIENCETECHNOLOGYB, 2016, 第 3 作者
(124) Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC, CHINESE PHYSICS B, 2016, 第 3 作者
(125) Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC, CHEMICAL PHYSICS LETTERS, 2016, 
(126) Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films, CHINESE PHYSICS B, 2016, 通讯作者
(127) Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs, JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 
(128) XPS study of impurities in Si-doped AlN film, SURFACE AND INTERFACE ANALYSIS, 2016, 
(129) Growth parametric study of N-polar InGaN films by metalorganic chemical vapor deposition, SUPERLATTICES AND MICROSTRUCTURES, 2016, 第 8 作者
(130) Comparative study of the differential resistance of GaAs- and GaN-based laser diodes, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2016, 通讯作者
(131) Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2016, 
(132) Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure, JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 通讯作者
(133) Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2016, 通讯作者
(134) Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 通讯作者
(135) Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses, VACUUM, 2016, 
(136) Investigation of breakdown mechanism during field emission process of AlN thin film microscopic cold cathode, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2016, 第 3 作者
(137) Suppression of electron leakage in 808 nm laser diodes with asymmetric waveguide layer, JOURNAL OF SEMICONDUCTORS, 2016, 通讯作者
(138) Photovoltaic Response of InGaN/GaN Multi-quantum Well Solar Cells Enhanced by Reducing p-type GaN Resistivity, IEEE JOURNAL OF PHOTOVOLTAICS, 2016, 通讯作者
(139) GaN high electron mobility transistors with AlInN back barriers, JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 
(140) Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes, SUPERLATTICES AND MICROSTRUCTURES, 2016, 通讯作者
(141) The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes, AIP ADVANCES, 2016, 
(142) Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells, SUPERLATTICES AND MICROSTRUCTURES, 2016, 
(143) Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution, APPLIED SURFACE SCIENCE, 2016, 第 6 作者
(144) The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2016, 
(145) Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2016, 
(146) 利用p-n~+结反向I-V特性计算p-GaN载流子浓度的方法, A new method to estimate the p-GaN carrier concentration by analyzing the reversed current-voltage characteristic curve of p-n~+ junction diode, ACTA PHYSICA SINICA, 2016, 通讯作者
(147) 利用p-n~+结反向I-V特性计算p-GaN载流子浓度的方法, A new method to estimate the p-GaN carrier concentration by analyzing the reversed current-voltage characteristic curve of p-n~+ junction diode, ACTA PHYSICA SINICA, 2016, 通讯作者
(148) Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes, OPTICS EXPRESS, 2016, 
(149) Effectiveness of inserting an InGaN interlayer to improve the performances of InGaN-based blue-violet laser diodes, CHINESE OPTICS LETTERS, 2016, 通讯作者
(150) Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure, CHINESE PHYSICS B, 2015, 通讯作者
(151) Differential resistance of GaN-based laser diodes with and without polarization effect, APPLIED OPTICS, 2015, 
(152) Study of N-polar GaN growth with a high resistivity by metal-organic chemical vapor deposition, VACUUM, 2015, 第 8 作者
(153) Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression, CHINESE PHYSICS B, 2015, 通讯作者
(154) p-InGaN层厚度对p-i-n结构InGaN太阳电池性能的影响及机理, Effect of p-InGaN Layer Thickness on The Performance of p-i-n InGaN Solar Cells, 发光学报, 2015, 第 2 作者
(155) Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN, CHINESE PHYSICS B, 2015, 通讯作者
(156) Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2015, 第 2 作者
(157) Impact of GaN transition layers in the growth of GaN epitaxial layer on silicon, JOURNAL OF SEMICONDUCTORS, 2015, 通讯作者
(158) Growth condition optimizaiton and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure, Chinese Physics B, 2015, 通讯作者
(159) Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers, JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 
(160) A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold current, SUPERLATTICES AND MICROSTRUCTURES, 2015, 
(161) Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness, JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 
(162) 背照射和正照射p-i-n结构GaN紫外探测器的i-GaN和p-GaN厚度设计, Effects and Design of i-GaN and p-GaN Layer Thickness on The Back-illuminated and Front-illuminated GaN p-i-n Ultraviolet Photodetectors, 发光学报, 2015, 第 3 作者
(163) The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2015, 
(164) Effect of localization states on the electroluminescence spectral width of blue-green light emitting InGaN/GaN multiple quantum wells, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2015, 第 2 作者
(165) Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells, OPTICS EXPRESS, 2015, 
(166) Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage, CHINESE PHYSICS B, 2015, 通讯作者
(167) Fabrication of ridge waveguide of 808 nm GaAs-based laser diodes by wet chemical etching, JOURNAL OF SEMICONDUCTORS, 2015, 通讯作者
(168) Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer, CHINESE PHYSICS B, 2015, 通讯作者
(169) Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode, CHINESE PHYSICS B, 2015, 通讯作者
(170) The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters, SUPERLATTICES AND MICROSTRUCTURES, 2015, 
(171) Utilization of polarization-inverted AlInGaN or relatively thinner AlGaN electron blocking layer in InGaN-based blue–violet laser diodes, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2015, 第 2 作者
(172) Temperature-dependent photoluminescence spectra of GaN epitaxial layer grown on Si(111) substrate, CHINESE PHYSICS B, 2015, 通讯作者
(173) Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness, JOURNAL OF APPLIED PHYSICS, 2015, 
(174) Dependence of spin dynamics on in-plane magnetic field in AlGaN/GaN quantum wells, EPL, 2015, 第 6 作者
(175) Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films, JOURNAL OF APPLIED PHYSICS, 2014, 
(176) Unintentionally doped semi-insulating GaN with a low dislocation density grown by metalorganic chemical vapor deposition, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 第 2 作者
(177) A compact 1×64 optical power splitter using silica-based PLC on quartz substrate, OPTICS AND LASER TECHNOLOGY, 2014, 第 15 作者
(178) Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2014, 第 2 作者
(179) A compact 1 x 64 optical power splitter using silica-based PLC on quartz substrate, OPTICS AND LASER TECHNOLOGY, 2014, 第 15 作者
(180) Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition, THIN SOLID FILMS, 2014, 
(181) Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p-i-n avalanche photodiodes, CHINESE PHYSICS B, 2014, 通讯作者
(182) The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN, JOURNAL OF APPLIED PHYSICS, 2014, 
(183) Performance comparison of front- and back-illuminated modes of the AlGaN-based p-i-n solar-blind ultraviolet photodetectors, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 第 2 作者
(184) Design and Fabrication of Novel Symmetric Low-Loss 1 x 24 Optical Power Splitter, JOURNAL OF LIGHTWAVE TECHNOLOGY, 2014, 第 13 作者
(185) Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells, CHINESE PHYSICS B, 2014, 通讯作者
(186) Design and fabrication of optical power splitters with large port count, CHINESE OPTICS LETTERS, 2014, 第 13 作者
(187) Effects of quantum well number on spectral response of InGaN/GaN multiple quantum well solar cells, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2014, 
(188) Back-illuminated AI_xGa_(1-x)N-based dual-band solar-blind ultraviolet photodetectors, JOURNAL OF SEMICONDUCTORS, 2014, 第 3 作者
(189) Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes, OPTICS EXPRESS, 2014, 
(190) A compact and low-loss 1×8 optical power splitter using silica-based PLC on quartz substrate, OPTICS COMMUNICATIONS, 2014, 第 16 作者
(191) A compact and low-loss 1 x 8 optical power splitter using silica-based PLC on quartz substrate, OPTICS COMMUNICATIONS, 2014, 第 16 作者
(192) Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2013, 
(193) Special asymmetric low loss 1×5 optical power splitter, ACTA PHOTONICA SINICA, 2013, 第 10 作者
(194) Performance Enhancement of GaN-Based Laser Diodes With Prestrained Growth, IEEE PHOTONICS TECHNOLOGY LETTERS, 2013, 第 13 作者
(195) Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth, APPLIED PHYSICS LETTERS, 2013, 第 9 作者
(196) Influence of different annealing temperature and atmosphere on the Ni-Au Ohmic contact to p-GaN, ACTA PHYSICA SINICA, 2013, 通讯作者
(197) Influence of growth conditions on the lateral grain size of AlN film grown by metal-organic chemical vapor deposition, Influence of growth conditions on the lateral grain size of AlN film grown by metal-organic chemical vapor deposition, ACTA PHYSICA SINICA, 2013, 第 2 作者
(198) A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe, CHINESE PHYSICS LETTERS, 2013, 通讯作者
(199) Influence of growth condicitons on the lateral grain size of AlN film grown by metal-organic chemical vapor deposition, 物理学报, 2013, 通讯作者
(200) Effect of V-defects on the performance deterioration of InGaN_GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness, JOURNAL OF APPLIED PHYSICS, 2013, 
(201) Back-illuminated 283 nm AlGaN solar-blind ultraviolet p-i-n photodetector, INFRARED AND LASER ENGINEERING, 2013, 第 3 作者
(202) Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime, CHINESE PHYSICS B, 2013, 通讯作者
(203) The effects of InGaN layer thickness on the performance of InGaN/GaN p - I - N solar cells, CHINESE PHYSICS B, 2013, 通讯作者
(204) Influence of growth conditions on the lateral grain size of AIN film grown by metal-organic chemical vapor deposition, ACTA PHYSICA SINICA, 2013, 通讯作者
(205) 283nm背照射P-i-n型AIGaN日盲紫外探测器, Back-illuminated 283 nm AIGaN solar-blind ultraviolet p-i-n photodetector, 红外与激光工程, 2013, 第 3 作者
(206) The Effects of a Low-Temperature GaN Interlayer on the Performance of InGaN GaN Solar Cells, CHINESE PHYSICS LETTERS, 2013, 通讯作者
(207) Influence of different annealing temperature and atmosphere on the Ni-Au Ohmic contact to p-GaN, ACTA PHYSICA SINICA, 2013, 通讯作者
(208) Special asymmetric low loss 1×5 optical power splitter, ACTAPHOTONICASINICA, 2013, 第 10 作者
(209) Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN, CHINESE PHYSICS LETTERS, 2012, 第 8 作者
(210) Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique, APPLIED PHYSICS EXPRESS, 2012, 第 5 作者
(211) Positive and negative effects of oxygen in thermal annealing of p-type GaN, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 
(212) Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire, JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 
(213) Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer, JOURNAL OF APPLIED PHYSICS, 2012, 
(214) Distribution of electric field and design of devices in GaN avalanche photodiodes, SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2012, 通讯作者
(215) Quadratic electro-optic effect in GaN-based materials, APPLIED PHYSICS LETTERS, 2012, 
(216) Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition, JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 
(217) 结构参数对p-i-n结构InGaN太阳能电池性能的影响及机理, Influence of structure parameters on the performance of p-i-n InGaN solar cell, 物理学报, 2012, 第 2 作者
(218) Two-dimensional hole gas in p-GaN/p-AlxGa1-xN heterojunctions and its influence on Ohmic contact, ACTA PHYSICA SINICA, 2012, 第 3 作者
(219) Distribution of electric field and design of devices in GaN avalanche photodiodes, Distribution of electric field and design of devices in GaN avalanche photodiodes, 中国科学:物理学、力学、天文学英文版, 2012, 第 2 作者
(220) Effect of light Si-doping on the near-band-edge emissions in high quality GaN, JOURNAL OF APPLIED PHYSICS, 2012, 
(221) Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Films Grown with Different Interlayers, CHINESE PHYSICS LETTERS, 2012, 第 5 作者
(222) Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes, APPLIED PHYSICS LETTERS, 2012, 
(223) p-GaN/p-Al_xGa_(1-x)N异质结界面处二维空穴气的性质及其对欧姆接触的影响, 物理学报, 2012, 第 3 作者
(224) A new method to measure the carrier concentration of p-gan, ACTA PHYSICA SINICA, 2011, 通讯作者
(225) Growth and device characteristics of nano-folding ingan/gan multiple quantum well led, ACTA PHYSICA SINICA, 2011, 第 9 作者
(226) Fabrication of246 nm back-illuminated AlGaN solar-blind ultraviolet p-i-n photodetector, HONGWAI YU JIGUANG GONGCHENG/INFRARED AND LASER ENGINEERING, 2011, 第 3 作者
(227) A study on the spectral response of back-illuminated p-i-n AlGaN heterojunction ultraviolet photodetector, JOURNAL OF APPLIED PHYSICS, 2011, 
(228) Simulation of the light extraction efficiency of nanostructure light-emitting diodes, Simulation of the light extraction efficiency of nanostructure light-emitting diodes, CHINESE PHYSICS B, 2011, 第 5 作者
(229) Growth and device characteristics of nano-folding ingan/gan multiple quantum well led, ACTA PHYSICA SINICA, 2011, 第 9 作者
(230) Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars, JOURNAL OF APPLIED PHYSICS, 2011, 第 5 作者
(231) 一种测量p-GaN载流子浓度的方法, A new method to measure the carrier concentration of p-GaN, 物理学报, 2011, 第 2 作者
(232) Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition, JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 
(233) The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition, The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition, 中国物理:英文版, 2011, 第 2 作者
(234) The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition, The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition, CHINESE PHYSICS B, 2011, 通讯作者
(235) 246nm p-i-n型背照AlGaN太阳盲紫外探测器的研制, Fabrication of 246 nm back-illuminated AIGaN solar-blind ultraviolet p-i-n photodetector, 红外与激光工程, 2011, 第 3 作者
(236) Effects of algan layer parameter on ultraviolet response of n(+)-gan/i-alxga1 (-) n-x/n(+)-gan structure ultraviolet-infrared photodetector, ACTA PHYSICA SINICA, 2010, 通讯作者
(237) Evaluation of both composition and strain distributions in ingan epitaxial film using x-ray diffraction techniques, CHINESE PHYSICS B, 2010, 第 5 作者
(238) Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours, Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours, CHINESE PHYSICS LETTERS, 2010, 第 5 作者
(239) Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector, JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 
(240) Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices, Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices, CHINESE PHYSICS B, 2010, 第 5 作者
(241) 器件参数对GaN基n^+-GaN/i-AlxGa1-xN/n^+-GaN结构紫外和红外双色探测器中紫外响应的影响, Effects of AlGaN layer parameter on ultraviolet response of n ^+-GaN /i-AlxGa1-x N /n^ +-GaN structure ultraviolet-infrared photodetector, 物理学报, 2010, 第 2 作者
(242) Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure, CHINESE PHYSICS LETTERS, 2010, 第 7 作者
(243) Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors, CHINESE PHYSICS B, 2010, 通讯作者
(244) Time delay in InGaN multiple quantum well laser diodes at room temperature, CHINESE PHYSICS B, 2010, 第 6 作者
(245) Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapordeposition, Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapordeposition, CHINESE PHYSICS B, 2010, 第 5 作者
(246) Influence of A1N buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with A1GaN interlayer, CHINESE PHYSICS. B, 2010, 第 10 作者
(247) Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer, CHINESE PHYSICS B, 2010, 第 7 作者
(248) Effects of AlGaN layer parameter on ultraviolet response of n+-GaN/i-AlxGa1-xN/n+-GaN structure ultraviolet-infrared photodetector, Acta Physica Sinica, 2010, 通讯作者
(249) An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells, JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 
(250) Microstructure and strain films using in-plane grazing analysis of GaN epitaxial incidence x-ray diffraction, Microstructure and strain films using in-plane grazing analysis of GaN epitaxial incidence x-ray diffraction, 中国物理:英文版, 2010, 第 3 作者
(251) Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure, Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure, 中国物理快报:英文版, 2010, 第 7 作者
(252) The fabrication of GaN-based nanopillar light-emitting diodes, JOURNAL OF APPLIED PHYSICS, 2010, 第 5 作者
(253) Time delay in InGaN multiple quantum well laser diodes at room temperature, Time delay in InGaN multiple quantum well laser diodes at room temperature, 中国物理:英文版, 2010, 第 6 作者
(254) Abnormal photoabsorption in high resistance gan epilayer, ACTA PHYSICA SINICA, 2010, 第 2 作者
(255) Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours, Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours, 中国物理快报:英文版, 2010, 第 5 作者
(256) Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction, CHINESE PHYSICS B, 2010, 第 3 作者
(257) 高阻氮化镓外延层的异常光吸收, Abnormal photoabsorption in high resistance GaN epilayer, 物理学报, 2010, 第 2 作者
(258) Stable multiplication gain in GaN p-i-n avalanche photodiodes with larger device area, Journal of Physics D: Applied Physics, 2009, 通讯作者
(259) Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films, APPLIED PHYSICS LETTERS, 2009, 
(260) 结构参数对GaN肖特基紫外探测器性能的影响及器件设计, Effect of Structure Parameters on the Performances of GaN Schottky Barrier Ultraviolet Photodetectors and Device Design, 发光学报, 2009, 第 2 作者
(261) InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer, InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer, 中国物理快报:英文版, 2009, 第 5 作者
(262) 穿透型V形坑对GaN基p-i-n结构紫外探测器反向漏电的影响, Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector, 物理学报, 2009, 第 2 作者
(263) An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors, An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors, 中国物理快报:英文版, 2009, 第 1 作者
(264) InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer, InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer, CHINESE PHYSICS LETTERS, 2009, 第 5 作者
(265) GaN基激光器的特性, Characteristics of GaN based laser diode, 红外与激光工程, 2009, 第 5 作者
(266) Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films, CHINESE PHYSICS LETTERS, 2009, 第 6 作者
(267) GaN-based violet laser diodes grown on free-standing GaN substrate, CHINESE PHYSICS B, 2009, 第 6 作者
(268) Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films, Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films, 中国物理快报:英文版, 2009, 第 6 作者
(269) A new p-n structure ultraviolet photodetector with p(-)-GaN active region, ACTA PHYSICA SINICA, 2009, 通讯作者
(270) Defect evolution and accompanied change of electrical properties during the GaN growth by metalorganic chemical vapor deposition, JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 
(271) 以弱p型为有源区的新型p-n结构GaN紫外探测器, A new p-n structure ultraviolet photodetector with p^--GaN active region, 物理学报, 2009, 第 2 作者
(272) Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods, JOURNAL OF APPLIED PHYSICS, 2009, 第 9 作者
(273) Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector, ACTA PHYSICA SINICA, 2009, 通讯作者
(274) The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates, CHINESE PHYSICS B, 2009, 第 3 作者
(275) An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors, An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors, CHINESE PHYSICS LETTERS, 2009, 通讯作者
(276) Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD, 半导体学报, 2008, 第 4 作者
(277) Evolution of Structural Defects in SiOx Films Fabricated by Electron Cyclotron Resonance Plasma Chemical Vapour Deposition upon Annealing Treatment, Evolution of Structural Defects in SiOx Films Fabricated by Electron Cyclotron Resonance Plasma Chemical Vapour Deposition upon Annealing Treatment, 中国物理快报:英文版, 2008, 第 6 作者
(278) High-temperature aln interlayer for crack-free algan growth on gan, JOURNAL OF APPLIED PHYSICS, 2008, 第 7 作者
(279) Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition, JOURNAL OF CRYSTAL GROWTH, 2008, 
(280) Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells, Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells, CHINESE PHYSICS LETTERS, 2008, 通讯作者
(281) Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature, CHINESE PHYSICS LETTERS, 2008, 第 8 作者
(282) Cl2/Ar/BCl3ICP刻蚀对AIGaN的损伤研究, Cl2/Ar/BCl3 Inductively Coupled Plasma-induced Etch Damage of AIGaN, 固体电子学研究与进展, 2008, 第 3 作者
(283) Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors, ACTA PHYSICA SINICA, 2008, 通讯作者
(284) Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors, ACTA PHYSICA SINICA, 2008, 通讯作者
(285) A new method to reduce the dark current of gan based schottky barrier ultraviolet photodetector, ACTA PHYSICA SINICA, 2008, 通讯作者
(286) Development of solar-blind AlGaN 128×128 Ultraviolet Focal Plane Arrays, SCIENCE IN CHINA. SERIES E: TECHNOLOGICAL SCIENCES, 2008, 第 5 作者
(287) Development of solar-blind AlGaN 128x128 ultraviolet focal plane arrays, SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2008, 第 5 作者
(288) Electronic structure and optical properties of GaN with Mn-doping, ACTA PHYSICA SINICA, 2008, 第 3 作者
(289) MOCVD生长的GaN薄膜中缺陷团引起的X射线漫散射研究, Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD, 半导体学报, 2008, 第 4 作者
(290) A GaN photodetector integrated structure for wavelength characterization of ultraviolet light, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 
(291) Electronic structure and optical properties of GaN with Mn-doping, ACTA PHYSICA SINICA, 2008, 第 3 作者
(292) Fabrication and optical characterization of GaN-based nanopillar light emitting diodes, CHINESE PHYSICS LETTERS, 2008, 第 4 作者
(293) A new method to reduce the dark current of gan based schottky barrier ultraviolet photodetector, ACTA PHYSICA SINICA, 2008, 通讯作者
(294) Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells, Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells, 中国物理快报:英文版, 2008, 第 1 作者
(295) Investigation of responsivity decreasing with rising bias voltage in a gan schottky barrier photodetector, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 
(296) Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type gan?, JOURNAL OF APPLIED PHYSICS, 2007, 
(297) Photoluminescence degradation in gan induced by light enhanced surface oxidation, JOURNAL OF APPLIED PHYSICS, 2007, 第 7 作者
(298) Influence of defects in n(-)-gan layer on the responsivity of schottky barrier ultraviolet photodetectors, APPLIED PHYSICS LETTERS, 2007, 
(299) Cl2/Ar/BCl3ICP刻蚀AlGaN的研究, Study of ICP Etching of AIGaN with Cl2/Ar/BCl3, 微纳电子技术, 2007, 第 4 作者
(300) Optical analysis of dislocation-related physical processes in gan-based epilayers, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 第 2 作者
(301) Performance improvement of GaN based Schottky barrier ultraviolet photodetector by adding a thin AlGaN window layer, CHINESE PHYSICS LETTERS, 2007, 通讯作者
(302) GaN基金属-半导体-金属探测器, Characteristics of Metal-Semiconductor-Metal Photodetectors Based On GaN, 半导体学报, 2007, 第 6 作者
(303) Growth of AlGaN epitaxial film with high Al content by metalorganic chemical vapour deposition, CHINESE PHYSICS LETTERS, 2007, 第 2 作者
(304) A study on the minority carrier diffusion length in n-type GaN films, A study on the minority carrier diffusion length in n-type GaN films, RARE METALS, 2007, 第 2 作者
(305) AlGaN/GaN异质结紫外探测器, 红外与激光工程, 2007, 第 5 作者
(306) 非故意掺杂n型GaN的负持续光电导现象, Negative Persistent Photoconductivity in Unintentionally Doped n-Type GaN, 半导体学报, 2007, 第 6 作者
(307) 蓝紫光InGaN多量子阱激光器, 中国科学. E辑, 技术科学, 2007, 第 8 作者
(308) 表面处理对p-GaN欧姆接触特性的影响, Effect of Surface Treatment on p-GaN Ohmic Contact Property, 半导体学报, 2007, 第 4 作者
(309) 高响应度GaN肖特基势垒紫外探测器的性能与分析, Analysis and Performance of a High Responsivity GaN Schottky-Barrier Ultraviolet Detector, 半导体学报, 2007, 第 2 作者
(310) A study on the minority carrier diffusion length in n-type GaN films, A study on the minority carrier diffusion length in n-type GaN films, 稀有金属:英文版, 2007, 第 2 作者
(311) 蓝紫光InGaN多量子阱激光器, 中国科学:E辑, 2007, 第 8 作者
(312) 一种新型GaN基肖特基结构紫外探测器, A new Schottky barrier structure of GaN-based ultraviolet photodetector, 物理学报, 2007, 第 3 作者
(313) Growth of AlGaN Epitaxial Film with Chemical Vapour High A1 Content by Metalorganic Deposition, Growth of AlGaN Epitaxial Film with Chemical Vapour High A1 Content by Metalorganic Deposition, 中国物理快报:英文版, 2007, 第 2 作者
(314) The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer, JOURNAL OF CRYSTAL GROWTH, 2007, 
(315) Performance Improvement of GaN Based Schottky Barrier Ultraviolet Photodetector by Adding a Thin A1GaN Window Layer, Performance Improvement of GaN Based Schottky Barrier Ultraviolet Photodetector by Adding a Thin A1GaN Window Layer, 中国物理快报:英文版, 2007, 第 2 作者
(316) Role of edge dislocation in enhancing the yellow luminescence of n-type GaN, 2006, 第 1 作者
(317) 蓝宝石衬底上侧向外延GaN中的位错降低, Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth, 半导体学报, 2006, 第 7 作者
(318) 蓝宝石衬底上侧向外延GaN中的位错降低, Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth, 半导体学报, 2006, 第 4 作者
(319) Characteristics of InGaN multiple quantum well blue-violet laser diodes, SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2006, 第 8 作者
(320) Parasitic reaction and its effect on the growth rate of aln by metalorganic chemical vapor deposition, JOURNAL OF CRYSTAL GROWTH, 2006, 
(321) Persistent Photoconductivity in n-type GaN, Persistent Photoconductivity in n-type GaN, 半导体光子学与技术:英文版, 2006, 第 3 作者
(322) Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films, APPLIED PHYSICS LETTERS, 2006, 
(323) 脊形InGaN激光器的温度分布及其对器件特性的影响, Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics, 半导体学报, 2006, 第 7 作者
(324) 脊形InGaN激光器的温度分布及其对器件特性的影响, Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics, 半导体学报, 2006, 第 7 作者
(325) Effects of edge dislocations and intentional si doping on the electron mobility of n-type gan films, APPLIED PHYSICS LETTERS, 2006, 
(326) 高量子效率前照式GaN基p-i-n结构紫外探测器, Characteristics of a Front-Illuminated Visible-Blind UV Photodetector Based on GaN p-i-n Photodiodes with High Quantum Efficiency, 半导体学报, 2006, 第 3 作者
(327) Persistent Photoconductivity in n-type GaN, SEMICONDUCTOR PHOTONICS AND TECHNOLOGY, 2006, 第 3 作者
(328) Effect of al incorporation on the algan growth by metalorganic chemical vapor deposition, APPLIED SURFACE SCIENCE, 2006, 
(329) AlGaN材料的MOCVD生长研究, AlCaN Films Grown on C-plane Sapphire by Metalorganic Chemical Vapor Deposition, 激光与红外, 2005, 第 1 作者
(330) p型GaN的掺杂研究, 半导体学报, 2005, 第 3 作者
(331) 氮化镓肖特基结紫外探测器的异常特性测量, Abnormal characteristic measurement of GaN Schottky junction UV detectors, 高技术通讯, 2005, 第 2 作者
(332) Ⅲ族氮化物紫外探测器及其研究进展, Ⅲ-Nitride Ultraviolet Photodetectors and the Research Development, 激光与红外, 2005, 第 8 作者
(333) GaN生长速率的研究, 半导体学报, 2005, 第 2 作者
(334) MOCVD系统中AlN生长速率的研究, Effect of Parasitic Reaction on the Growth Rate of AIN by Metalorganic Chemical Vapor Deposition, 激光与红外, 2005, 第 1 作者
(335) GaN基蓝紫光激光器的材料生长和器件研制, 半导体学报, 2005, 第 6 作者
(336) P型氮化镓表面的X射线光电子能谱研究, X-ray Photoelectron Spectroscopy Study to the Surface of p-type Gallium Nitride, 激光与红外, 2005, 第 6 作者
(337) GaN基蓝紫光激光器的材料生长和器件研制, Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes, 半导体学报, 2005, 第 8 作者
(338) GaN外延材料中持续光电导的光淬灭, 半导体学报, 2005, 第 2 作者
(339) GaN基肖特基结构紫外探测器, 半导体学报, 2004, 第 2 作者
(340) AlGaN/GaN异质结中极化效应的模拟, 中国科学:G辑, 2004, 第 2 作者
(341) AlGaN/GaN异质结中极化效应的模拟, 中国科学:G辑, 2004, 第 2 作者
(342) AlGaN/GaN异质结中极化效应的模拟, 中国科学G辑物理, 2004, 第 2 作者
(343) 立方相GaN的持续光电导, 半导体学报, 2003, 第 2 作者
(344) GaN基MSM结构紫外光探测器, 中国科学. G辑, 物理, 2003, 第 2 作者
(345) GaN外延膜厚度的x射线双晶衍射测量, 中国科学:G辑, 2003, 第 5 作者
(346) GaN基MSM结构紫外光探测器, 中国科学:G辑, 2003, 第 2 作者
(347) GaN外延膜厚度的x射线双晶衍射测量, 中国科学. G辑,物理, 2003, 第 5 作者
(348) Pt/n—GaN肖特基接触的退火行为, 半导体学报, 2003, 第 3 作者
(349) GaN基MSM结构紫外光探测器, 中国科学:G辑, 2003, 第 2 作者
(350) GaN外延膜厚度的x射线双晶衍射测量, 中国科学:G辑, 2003, 第 5 作者
(351) GaAs吸收衬底生长的立方相GaN发光二极管的工艺设计与实现, 半导体学报, 2002, 第 3 作者
(352) GaAs衬底生长的立方GaN晶片键合技术, 中国科学:E辑, 2002, 第 6 作者
(353) GaN/GaAs(001)与GaN/Al2O3(0001)外延层光辅助湿法腐蚀行为的比较, 半导体学报, 2002, 第 4 作者
(354) GaAs衬底生长的立方GaN晶片键合技术, 中国科学:E辑, 2002, 第 5 作者
(355) 立方相 Al_xGa_(1-x)N/GaAs(100)的MOVCD外延生长, 半导体学报, 2002, 第 4 作者
(356) GaN横向外延中晶面倾斜的形成机制, 中国科学. A辑,数学, 2002, 第 6 作者
(357) GaN基紫外探测器的研究与制备, GaN-based Ultraviolet Photodetectors Fabricated by Metalorganic Chemical Vapor Deposition, 发光学报, 2001, 第 2 作者
(358) GaN基紫外探测器的研究与制备(英文), GaN-based Ultraviolet Photodetectors Fabricated by Metalorganic Chemical Vapor Deposition, 发光学报, 2001, 第 2 作者
(359) 高质量立方相InGaN的生长, 半导体学报, 2000, 第 7 作者
(360) Strain Analysis of Cubic AlGaN/GaNGrownon GaAs(100) Substrate by MOVPE, 半导体学报, 1999, 第 4 作者
(361) 立方相AlxGa1—xN/GaAs/(100)的光致发光研究, 半导体学报, 1999, 第 2 作者
(362) Role of inserting an InGaN strain release interlayer in AlGaN growth, RESULTS IN PHYSICS, 第 6 作者
(363) High-quality AlN growth on flat sapphire at relatively low temperature by crystal island shape control method, APPLIED SURFACE SCIENCE, 第 3 作者
发表著作
( 1 ) 《先进焦平面技术导论》第四章, Introduction to Advanced Focal Plane Arrays, 国防工业出版社, 2011-01, 第 1 作者
( 2 ) 《光电二极管》第十四章, Photodiodes - World Activities in 2011, Intech-Open Access Publisher, 2011-08, 第 1 作者

科研活动

   
科研项目
( 1 ) GaN基光电子材料与器件的基础问题, 负责人, 国家任务, 2010-01--2013-12
( 2 ) 太阳盲GaN基紫外探测器阵列, 负责人, 国家任务, 2007-12--2010-10
( 3 ) 位错和点缺陷对日盲型AlGaN紫外探测器性能的影响机理, 负责人, 国家任务, 2008-01--2010-12
( 4 ) 纳米微结构InGaN太阳能电池的MOCVD生长与器件技术, 负责人, 国家任务, 2011-01--2014-12
( 5 ) 针对绿色激光器的InGaN量子点生长与性能调控, 负责人, 国家任务, 2014-01--2017-12
( 6 ) GaN基光电子材料与器件, 负责人, 中国科学院计划, 2015-01--2017-12
( 7 ) AlGaN基紫外双色探测器, 负责人, 国家任务, 2016-01--2019-12
( 8 ) 面向激光显示的三基色半导体激光器(LD)关键材料与技术基础研究, 负责人, 国家任务, 2016-07--2020-12
( 9 ) AlGaN材料快陥凋控及日盲紫外雪崩探測器研究, 负责人, 中国科学院计划, 2016-01--2020-12
( 10 ) GaN同质衬底上量子阱外延生长及p型掺杂技术研究, 负责人, 国家任务, 2016-01--2020-12
( 11 ) GaN基绿光激光器芯片研制, 负责人, 地方任务, 2016-07--2019-12
( 12 ) GaN基大功率紫外(<360纳米)激光器, 负责人, 国家任务, 2021-01--2025-12
( 13 ) GaN基光电子材料与器件, 负责人, 国家任务, 2019-01--2021-12
( 14 ) GaN基大功率紫外激光器, 负责人, 地方任务, 2021-08--2023-07
参与会议
(1)GaN-based Materials and Laser Diodes   国际显示会议   2020-06-03
(2)GaN基材料与激光器   第三届全国宽禁带半导体学术会议   2019-10-17
(3)GaN基材料与激光器   第三届微纳光学技术与应用交流会   2019-09-20
(4)GaN基材料与光电子器件   中国材料大会   2019-07-13
(5)GaN基材料与紫外光光电子器件   第六届海峡两岸宽能隙半导体会议   2018-10-26
(6)GaN基光电子材料与器件   第十五届全国MOCVD学术会议   2018-08-22
(7)GaN基材料与激光器   全国第18次光纤通信暨第19届集成光学学术大会   2018-07-14
(8)GaN基材料生长与器件技术   第十三届全国激光技术与光电子学学术会议   2018-03-10
(9)GaN基材料与器件技术   2017年第二届宽禁带半导体会议    2017-08-10
(10)GaN基材料技术与器件物理   2017年第21届全国半导体物理会议    2017-07-18
(11)GaN基光电子材料与器件   2017年第十二届激光技术与光电子学会议    2017-03-14
(12)GaN基材料技术与器件物理   第十四届全国MOCVD会议   赵德刚   2016-08-16
(13)GaN基材料生长与器件技术   第一届全国宽禁带半导体学术及应用技术会议   赵德刚   2015-10-30
(14)GaN基光电子材料与器件   第十四届全国固体薄膜学术会议   赵德刚   2015-07-29
(15)GaN基光电子材料与器件   第六届全国信息光学与光子学学术会议   赵德刚   2014-07-22
(16)GaN基材料生长与光电子器件   第十三届全国MOCVD会议   赵德刚   2014-05-06