基本信息
赵德刚  男  博导  中国科学院半导体研究所
电子邮件: dgzhao@red.semi.ac.cn
通信地址: 北京市清华东路甲35号光电子研发中心
邮政编码: 100083
部门/实验室:光电子研究发展中心

研究领域

   

招生信息

   
招生专业
080903-微电子学与固体电子学
招生方向
半导体光电子材料与器件

教育背景

1997-09--2000-06   中国科学院半导体研究所   博士
1994-09--1997-04   电子科技大学   硕士
1990-09--1994-06   电子科技大学   学士
学历
   
学位
   

工作经历

   
工作简历
2000-07~现在, 中国科学院半导体研究所, 研究员
1997-09~2000-06,中国科学院半导体研究所, 博士
1994-09~1997-04,电子科技大学, 硕士
1990-09~1994-06,电子科技大学, 学士
社会兼职
2011-01-01-今,中国电子学会高级会员,

教授课程

宽禁带半导体光电子材料与器件

专利与奖励

   
奖励信息
(1) 科技部创新人才推进计划-中青年科技创新领军人才, 部委级, 2018
(2) 享受国务院政府特殊津贴, , 其他, 2018
(3) 国家百千万人才工程, 部委级, 2017
(4) 中国青年科技奖, 部委级, 2011
专利成果
( 1 ) 测量肖特基势垒高度的装置和方法, 2012, 第 2 作者, 专利号: Z201210209958.2
( 2 ) InGaN太阳能电池及其制作方法, 2012, 第 2 作者, 专利号: 201210319268.2
( 3 ) 氮化镓基雪崩型探测器及其制作方法, 2012, 第 2 作者, 专利号: ZL.200910077383.1
( 4 ) 一种测量直接带隙半导体材料禁带宽度的装置和方法 , 2012, 第 2 作者, 专利号: Z201210461734.0
( 5 ) 一种紫外红外双色探测器及制作方法, 2012, 第 2 作者, 专利号: ZL.201010183403.6
( 6 ) 一种激光器及其制作方法, 2014, 第 2 作者, 专利号: 201410490395.8
( 7 ) 同时降低发散角和阈值电流的激光器的制备方法, 2014, 第 2 作者, 专利号: 201410563124.0
( 8 ) 抑制GaAs基激光器高阶模的方法, 2014, 第 2 作者, 专利号: 201410564609.1
( 9 ) 高密度高均匀InGaN量子点结构及生长方法, 2014, 第 2 作者, 专利号: 201410412107.7
( 10 ) 绿光LED外延层结构及生长方法, 2014, 第 2 作者, 专利号: 201410636516.5
( 11 ) 含有低温插入层的铟镓氮/氮化镓多量子阱太阳能电池, 2014, 第 2 作者, 专利号: 201410426193.7
( 12 ) 低电阻率低温P型铝镓氮材料的制备方法, 2014, 第 2 作者, 专利号: 201410426219.8
( 13 ) 一种具有平面型发射阴极的纳米真空三极管及其制作方法, 2014, 第 2 作者, 专利号: 201410504100.8
( 14 ) 一种GaN复合薄膜及在Si衬底上形成GaN复合薄膜的方法, 2014, 第 2 作者, 专利号: 201410337785.1
( 15 ) InGaN量子点的外延结构及生长方法, 2014, 第 2 作者, 专利号: 201410784663.7
( 16 ) 测量肖特基势垒高度的装置和方法, 2014, 第 2 作者, 专利号: ZL. 201210209958.2
( 17 ) 降低电子泄漏的砷化镓激光器的制作方法, 2014, 第 2 作者, 专利号: 201410563125.5
( 18 ) 制备低比接触电阻率的p-GaN欧姆接触的方法, 2014, 第 2 作者, 专利号: 201410652524.9
( 19 ) 降低Ni/Au与p-GaN欧姆接触的比接触电阻率的方法, 2014, 第 2 作者, 专利号: 201410652670.1
( 20 ) InGaN/AlInGaN多量子阱太阳能电池结构, 2014, 第 2 作者, 专利号: 201410592387.4
( 21 ) 高电阻低位错GaN薄膜及制备方法, 2014, 第 2 作者, 专利号: 201410089597.1
( 22 ) InGaN太阳能电池及其制作方法, 2015, 第 2 作者, 专利号: ZL. 201210319268.2
( 23 ) AlxGa1-xN基紫外探测器及制备方法, 2015, 第 2 作者, 专利号: 201510967933.2
( 24 ) 绿光LED芯片外延层的结构及生长方法, 2015, 第 2 作者, 专利号: 201510309152.4
( 25 ) 基于二维岛的InGaN量子点外延结构及制备方法, 2015, 第 2 作者, 专利号: 201510522409.4
( 26 ) InGaN量子点的外延结构及生长方法, 2017, 第 2 作者, 专利号: CN104538524B
( 27 ) 绿光LED外延层结构及生长方法, 2017, 第 2 作者, 专利号: CN104393132B
( 28 ) 高密度高均匀InGaN量子点结构及生长方法, 2017, 第 2 作者, 专利号: CN104157759B
( 29 ) 减小GaN基蓝紫光端发射激光器电子泄漏的方法, 2017, 第 2 作者, 专利号: CN103956653B
( 30 ) 低电阻率低温P型铝镓氮材料的制备方法, 2017, 第 2 作者, 专利号: CN104201256B
( 31 ) 一种GaN基紫外激光器结构及制备方法, 2017, 第 2 作者, 专利号: 201710472653.3

出版信息

   
发表论文
(1) Effect of dual-temperature-grown InGaN/GaN multiple quantum wells on luminescence characteristics, Journal of Alloys and Compounds, 2019, 第 11 作者
(2) he compensation role of deep defects in the electric properties of lightly Si-doped GaN, Journal of Alloys and Compounds, 2019, 第 11 作者
(3) Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence, Nanoscale Research Letters, 2019, 第 11 作者
(4) Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer, Optics and Laser Technology, 2019, 第 11 作者
(5) Room-temperature continuous-wave operation of GaN-based blue-violet laser diodes with a lifetime longer than 1000 h, Journal of Semiconductors, 2019, 第 11 作者
(6) Performance enhancement of the GaN-based laser diode by using an unintentionally doped GaN upper waveguide, Japanese Journal of Applied Physics, 2018, 第 11 作者
(7) Energy band tilt in ultra-thin InGaN film affected by the surface adsorption and desorption, Applied Surface Science, 2018, 第 11 作者
(8) Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells, Optics Express, 2018, 第 11 作者
(9) Improvement of slope efficiency of GaN-Based blue laser diodes by using asymmetric MQW and InxGa1-xN lower waveguide, Journal of Alloys and Compounds, 2018, 第 11 作者
(10) The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells, Superlattices and Microstructures, 2018, 第 11 作者
(11) Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer, Superlattices and Microstructures, 2018, 第 11 作者
(12) Influence of In doping in GaN barriers on luminescence properties of InGaN / GaN multiple quantum well LEDs, Superlattices and Microstructures, 2018, 第 11 作者
(13) Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms, Superlattices and Microstructures, 2018, 第 11 作者
(14) Influence of InGaN layer growth temperature on luminescence properties of InGaN/GaN multiple quantum wells, Materials Research Express, 2018, 第 11 作者
(15) Suppression of electron and hole overflow in GaN-based near-ultraviolet laser diodes, Chinese Physics B, 2018, 第 11 作者
(16) Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide, Chinese Physics B, 2018, 第 11 作者
(17) Influence of hydrogen impurity on the resistivity of low temperature grown p-AlxGa1-xN layer (0.08 ≤ x≤ 0.104), Superlattices and Microstructures, 2018, 第 11 作者
(18) Anomalous electroluminescent blue-shift behavior induced by well widths variance and localization effect in InGaN/GaN multi-quantum wells, Optics Express, 2018, 第 11 作者
(19) Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers, IEEE Photonics Journal, 2018, 第 11 作者
(20) Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppressing the incorporation of carbon impurity, AIP Advances, 2018, 第 11 作者
(21) Improvement of thermal stability of InGaN/GaN multiple-quantum-well by reducing the density of threading dislocations, Optical Materials, 2018, 第 11 作者
(22) Deep levels induced optical memory effect in thin InGaN film, AIP Advances, 2018, 第 11 作者
(23) Carbon-related defects as a source for the enhancement of yellow luminescence of unintentionally doped GaN, Nanomaterials, 2018, 第 11 作者
(24) Influence of carrier gas H2 flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures, Chinese Physics B, 2018, 第 11 作者
(25) Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer, Journal of Crystal Growth, 2017, 第 11 作者
(26) Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes, IEEE Photonics Journal, 2017, 第 11 作者
(27) Different annealing temperature suitable for different Mg doped P-GaN, Superlattices and Microstructures, 2017, 第 11 作者
(28) Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD, Materials Technology, 2017, 第 11 作者
(29) Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold, Applied Optics, 2017, 第 11 作者
(30) Electroluminescence property improvement by adjusting quantum wells' position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes, AIP Advances, 2017, 第 11 作者
(31) Performance Improvement of GaN-Based Violet Laser Diodes, Chinese Physics Letters, 2017, 第 1 作者
(32) Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3, Superlattices and Microstructures, 2017, 第 11 作者
(33) Suppression of optical field leakage to GaN substrate in GaN-based green laser diode, Superlattices and Microstructures, 2017, 第 11 作者
(34) Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes, Scientific Reports, 2017, 第 11 作者
(35) Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region, Optics Express, 2017, 第 11 作者
(36) Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes, Journal of Semiconductors, 2017, 第 1 作者
(37) Analysis of localization effect in blue-violet light mitting InGaN/GaN multiple quantum wells with different well widths, Chinese Physics B, 2017, 第 11 作者
(38) Different influence of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes, Chinese Physics B, 2017, 第 11 作者
(39) Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide, Chinese Physics B, 2017, 第 11 作者
(40) The residual C concentration control for low temperature growth p-type GaN, Chinese Physics B, 2017, 第 11 作者
(41) New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode, Optics and Laser Technology, 2017, 第 11 作者
(42) Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes, Physica Status Solidi A, 2017, 第 11 作者
(43) Comparative study on the InGaN multiple-quantum-well solar cells assisted by capacitance-voltage measurement with additional laser illumination, Journal of Alloys and Compounds, 2017, 第 11 作者
(44) Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells, IEEE Journal of Photovoltaics, 2017, 第 11 作者
(45) Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials, Chinese Physics B, 2017, 第 11 作者
(46) Influence of residual carbon impurities in a heavily Mg-doped GaN contact layer on an Ohmic contact, Applied Optics, 2017, 第 11 作者
(47) Increase of photogenerated carriers in thick quantum wells in InGaN solar cells verified by laser-assisted capacitance-voltage measurement, Materials Research Express, 2017, 第 11 作者
(48) Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors, J. Vac. Sci. Technol. B, 2016, 第 11 作者
(49) Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes, J. Vac. Sci. Technol. B, 2016, 第 11 作者
(50) GaN high electron mobility transistors with AlInN back barriers, Journal of Alloys and Compounds, 2016, 第 11 作者
(51) Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure, Journal of Alloys and Compounds, 2016, 第 11 作者
(52) Photovoltaic Response of InGaN/GaN Multi-quantum Well Solar Cells Enhanced by Reducing p-type GaN Resistivity, IEEE Journal of Photovoltaics, 2016, 第 11 作者
(53) The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes, AIP Advances, 2016, 第 11 作者
(54) The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content, Phys. Status Solidi A, 2016, 第 11 作者
(55) Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses, Vaccum, 2016, 第 11 作者
(56) Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs, Journal of Alloys and Compounds, 2016, 第 11 作者
(57) Effectiveness of inserting an InGaN interlayer to improve the performances of InGaN-based blue-violet laser diodes, Chinese Optics Letters, 2016, 第 11 作者
(58) Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well lightemitting diodes, Superlattices and Microstructures, 2016, 第 11 作者
(59) Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC, Chinese Physics B, 2016, 第 11 作者
(60) Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes, Optics Express, 2016, 第 11 作者
(61) Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films, Chinese Physics B, 2016, 第 11 作者
(62) Comparative study of the differential resistance of GaAs- and GaN-based laser diodes, Journal of Vacuum Science & Technology B, 2016, 第 11 作者
(63) Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC, Chemical Physics Letters, 2016, 第 11 作者
(64) Investigation of breakdown mechanism during field emission process of AlN thin film microscopic cold cathode, Journal of Vacuum Science & Technology B, 2016, 第 11 作者
(65) Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes, Journal of Physics D: Applied Physics, 2016, 第 11 作者
(66) Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells, Superlattices and Microstructures, 2016, 第 11 作者
(67) XPS study of impurities in Si-doped AlN film, Surface and Interface Analysis, 2016, 第 11 作者
(68) Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD, Applied Physics A-Materials Science & Processing, 2016, 第 11 作者
(69) Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers, Journal of Alloys and Compounds, 2015, 第 11 作者
(70) Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage, Chinese Physics B, 2015, 第 11 作者
(71) Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode, Chinese Physics B, 2015, 第 11 作者
(72) Temperature-dependent photoluminescence spectra of GaN epitaxial layer grown on Si (111) substrate, Chinese Physics B, 2015, 第 11 作者
(73) Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer, Chinese Physics B, 2015, 第 11 作者
(74) Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN, Chinese Physics B, 2015, 第 11 作者
(75) Growth condition optimizaiton and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure, Chinese Physics B, 2015, 第 11 作者
(76) Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and derivation of its sheet density expression, Chinese Physics B, 2015, 第 11 作者
(77) Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage, Chinese Physics B, 2015, 第 11 作者
(78) Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers, Journal of Alloys and Compounds, 2015, 第 11 作者
(79) Effect of localization states on the electroluminescence spectral width of blue-green light emitting InGaN/GaN multiple quantum wells, Journal of Vacuum Science & Technology A, 2015, 第 11 作者
(80) Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells, Optics Express, 2015, 第 11 作者
(81) Differential resistance of GaN-based laser diodes with and without polarization effect, Applied Optics, 2015, 第 11 作者
(82) The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters, Superlattices and Microstructures, 2015, 第 11 作者
(83) The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes, Physica Status Solidi A, 2015, 第 11 作者
(84) Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films, J. Vac. Sci. Technol. A, 2015, 第 11 作者
(85) Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness, Journal of Alloys and Compounds, 2015, 第 11 作者
(86) Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness, Journal of Applied Physics, 2015, 第 11 作者
(87) Utilization of polarization-inverted AlInGaN or relatively thinner AlGaN electron blocking layer in InGaN-based blue–violet laser diodes, J. Vac. Sci. Technol. B , 2015, 第 11 作者
(88) A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold current, Superlattice and Microstructure, 2015, 第 11 作者
(89) The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN, Journal of Applied Physics, 2014, 第 11 作者
(90) Unintentionally doped semi-insulating GaN with a low dislocation density grown by metalorganic chemical vapor deposition, J. Vac. Sci. Technol. B, 2014, 第 11 作者
(91) Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells, J. Vac. Sci. Technol. A, 2014, 第 11 作者
(92) Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p-i-n avalanche photodiodes, Chinese Physics B, 2014, 第 11 作者
(93) Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells, Chinese Physics B, 2014, 第 11 作者
(94) Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films, Journal of Applied Phyics, 2014, 第 11 作者
(95) Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes, Optics Express, 2014, 第 11 作者
(96) Performance comparison of front- and back-illuminated modes of the AlGaN-based p-i-n solar-blind ultraviolet photodetectors, J. Vac. Sci. Technol. B, 2014, 第 11 作者
(97) Effects of quantum well number on spectral response of InGaN/GaN multiple quantum well solar cells, Phys. Status Solidi A, 2014, 第 11 作者
(98) Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition, Thin Solid Films, 2014, 第 11 作者
(99) Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN, Semiconductor Science and Technology, 2013, 第 11 作者
(100) Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness, Journal of Applied Physics, 2013, 第 11 作者
(101) High Power InGaN-based Blue-Violet Laser Diode Array with Broad-area Stripe, Chinese Physics Letters, 2013, 第 11 作者
(102) The Effects of a Low-Temperature GaN Interlayer on the Performance of InGaN/GaN Solar Cells, Chinese Physics Letters, 2013, 第 11 作者
(103) The effects of InGaN layer thickness on the performance of InGaN/GaN p–i–n solar cells, Chinese Physics B, 2013, 第 11 作者
(104) Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime, Chinese Physics B, 2013, 第 11 作者
(105) Influence of different annealing temperature and atmosphere on the Ni/Au Ohmic contact to p-GaN, 物理学报, 2013, 第 11 作者
(106) Influence of growth condicitons on the lateral grain size of AlN film grown by metal-organic chemical vapor deposition, 物理学报, 2013, 第 11 作者
(107) Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition, Journal of Alloys and Compounds, 2012, 第 1 作者
(108) Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire, Journal of Alloys and Compounds, 2012, 第 1 作者
(109) Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes, Applied Physics Letters, 2012, 第 11 作者
(110) Effect of light Si-doping on the near-band-edge emissions in high quality GaN, Journal of Applied Physics, 2012, 第 11 作者
(111) Distribution of electric field and design of devices in GaN avalanche photodiodes, Science in China , 2012, 第 11 作者
(112) Positive and negative effects of oxygen in thermal annealing of p-type GaN, Semiconductor Science and Technology, 2012, 第 11 作者
(113) Quadratic electro-optic effect in GaN-based materials, Applied Physics Letters, 2012, 第 2 作者
(114) Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer, Journal of Applied Physics, 2012, 第 11 作者
(115) Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition, Journal of Alloys and Compounds, 2011, 第 11 作者
(116) A study on the spectral response of back-illuminated p-i-n AlGaN heterojunction ultraviolet photodetector, Journal of Applied Physics, 2011, 第 1 作者
(117) An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells, Journal of Alloys and Compounds , 2010, 第 1 作者
(118) Hole concentration test of p-type GaN by analyzing the spectral response of p-n+ structure GaN ultraviolet photodetector , Journal of Alloys and Compounds , 2010, 第 1 作者
(119) Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors, Chinese Physics B, 2010, 第 1 作者
(120) Effects of AlGaN layer parameter on ultraviolet response of n+-GaN/i-AlxGa1-xN/n+-GaN structure ultraviolet-infrared photodetector, Acta Physica Sinica, 2010, 第 11 作者
(121) Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films, Applied Physics Letters, 2009, 第 1 作者
(122) Defect evolution and accompanied change of electrical properties during the GaN growth by metalorganic chemical vapor deposition, Journal of Alloys and Compounds, 2009, 第 1 作者
(123) An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors, Chinese Physics Letters, 2009, 第 1 作者
(124) Stable multiplication gain in GaN p-i-n avalanche photodiodes with larger device area, Journal of Physics D: Applied Physics, 2009, 第 11 作者
(125) Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector, Acta Physica Sinica, 2009, 第 11 作者
(126) A GaN photodetector integrated structure for wavelength characterization of ultraviolet light, Semiconductor Science and Technology, 2008, 第 1 作者
(127) Al composition variations in AlGaN films grown on low temperature GaN buffer layer by metalorganic chemical vapor deposition, Journal of Crystal Growth, 2008, 第 1 作者
(128) Effect of interface roughness and dislocation density on the electroluminescence intensity of InGaN multiple quantum wells, Chinese Physics Letters, 2008, 第 1 作者
(129) Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector, Semiconductor Science and Technology, 2008, 第 11 作者
(130) Influence of defects in n—-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors, Applied Physics Letters, 2007, 第 1 作者
(131) Influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer, Journal of Crystal Growth, 2007, 第 1 作者
(132) Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN , Journal of Applied Physics, 2007, 第 1 作者
(133) Effects of edge dislocations and intentional Si doping on the electron mobility of n-type GaN films, Applied Physics Letters, 2006, 第 1 作者
(134) Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films, Applied Physics Letters, 2006, 第 1 作者
(135) Role of edge dislocation in enhancing the yellow luminescence of n-type GaN , Applied Physics Letters, 2006, 第 1 作者
(136) Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition, Journal of Crystal Growth, 2006, 第 1 作者
(137) Effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition, Applied Surface Science, 2006, 第 1 作者
发表著作
( 1 ) 《先进焦平面技术导论》第四章, Introduction to Advanced Focal Plane Arrays, 国防工业出版社, 2011-01, 第 1 作者
( 2 ) 《光电二极管》第十四章, Photodiodes - World Activities in 2011, Intech-Open Access Publisher, 2011-08, 第 1 作者

科研活动

   
科研项目
( 1 ) GaN基光电子材料与器件的基础问题, 主持, 国家级, 2010-01--2013-12
( 2 ) 太阳盲GaN基紫外探测器阵列, 主持, 国家级, 2007-12--2010-10
( 3 ) 位错和点缺陷对日盲型AlGaN紫外探测器性能的影响机理, 主持, 国家级, 2008-01--2010-12
( 4 ) 纳米微结构InGaN太阳能电池的MOCVD生长与器件技术, 主持, 国家级, 2011-01--2014-12
( 5 ) 针对绿色激光器的InGaN量子点生长与性能调控, 主持, 国家级, 2014-01--2017-12
( 6 ) GaN基光电子材料与器件, 主持, 部委级, 2015-01--2017-12
( 7 ) AlGaN基紫外双色探测器, 主持, 国家级, 2016-01--2019-12
( 8 ) 面向激光显示的三基色半导体激光器(LD)关键材料与技术基础研究, 主持, 国家级, 2016-07--2020-12
( 9 ) AlGaN材料快陥凋控及日盲紫外雪崩探測器研究, 主持, 部委级, 2016-01--2020-12
( 10 ) GaN同质衬底上量子阱外延生长及p型掺杂技术研究, 主持, 国家级, 2016-01--2020-12
( 11 ) GaN基绿光激光器芯片研制, 主持, 省级, 2016-07--2019-12
参与会议
(1)GaN基材料与紫外光光电子器件   第六届海峡两岸宽能隙半导体会议   2018-10-26
(2)GaN基光电子材料与器件   第十五届全国MOCVD学术会议   2018-08-22
(3)GaN基材料与激光器   全国第18次光纤通信暨第19届集成光学学术大会   2018-07-14
(4)GaN基材料生长与器件技术   第十三届全国激光技术与光电子学学术会议   2018-03-10
(5)GaN基材料与器件技术   2017年第二届宽禁带半导体会议    2017-08-10
(6)GaN基材料技术与器件物理   2017年第21届全国半导体物理会议    2017-07-18
(7)GaN基光电子材料与器件   2017年第十二届激光技术与光电子学会议    2017-03-14
(8)GaN基材料技术与器件物理   第十四届全国MOCVD会议   赵德刚   2016-08-16
(9)GaN基材料生长与器件技术   第一届全国宽禁带半导体学术及应用技术会议   赵德刚   2015-10-30
(10)GaN基光电子材料与器件   第十四届全国固体薄膜学术会议   赵德刚   2015-07-29
(11)GaN基光电子材料与器件   第六届全国信息光学与光子学学术会议   赵德刚   2014-07-22
(12)GaN基材料生长与光电子器件   第十三届全国MOCVD会议   赵德刚   2014-05-06

合作情况

   
项目协作单位
   

指导学生