基本信息
金鹏 男 博导 半导体研究所

理学博士,研究员,博士生导师。

    1992年至1996年在南开大学物理系凝聚态物理专业学习,获理学学士学位。1996年至2001年在南开大学物理学院硕博连读,师从潘士宏教授,开展半导体光电子学性质的研究,获理学博士学位。2001年至2003年在中国科学院半导体研究所半导体材料科学重点实验室进行博士后研究工作,合作导师王占国院士,从事半导体低维结构的材料生长、性质及器件的研究工作。出站后留所工作。

    已先后承担国家“973”计划项目、国家重大科研装备研制项目、国家自然科学基金项目等多项。目前的研究兴趣包括低维结构半导体材料与器件、半导体金刚石材料与器件、宽禁带半导体材料物理、光谱技术与光谱仪器等。

    欢迎凝聚态物理、物理学、应用物理学、材料物理与化学、半导体材料、微电子学与固体电子学、半导体光电子学、光学、光学工程等相关专业和方向的学子报考本人的硕士和博士研究生。

办公电话:010-82304563
电子邮件:pengjin@semi.ac.cn
通信地址:中国科学院半导体研究所4号科研楼210室 
邮政编码:100083

研究领域

(1)低维结构半导体材料与器件
(2)半导体金刚石材料与器件
(3)宽禁带半导体材料物理
(4)光谱技术与光谱仪器

招生信息

   
招生专业
080501-材料物理与化学
085208-电子与通信工程
招生方向
半导体低维结构材料和量子器件,宽禁带半导体材料、器件和物理
宽禁带半导体材料、器件和物理

教育背景

1996-09--2001-06 南开大学 理学博士学位
1992-09--1996-07 南开大学 理学学士学位
学历
-- 研究生
学位
-- 博士

工作经历

   
工作简历
2009-01--今 中国科学院半导体研究所 研究员
2003-09--2008-12 中国科学院半导体研究所 副研究员
2001-07--2003-09 中国科学院半导体研究所 博士后
社会兼职
2015-09--今 中国有色金属学会宽禁带半导体专业委员会,委员
2012-01--今 中国电子学会半导体与集成技术分会,高级会员

专利与奖励

   
专利成果
[1] 霍晓迪, 金鹏, 王占国, 周广迪. 一种高均一性半导体膜的生长装置及制备方法. CN: CN111826634B, 2023-03-31.
[2] 许敦洲, 金鹏, 王占国. 一种氧化镓/金刚石雪崩光电二极管及其制备方法. CN202211306418.6, 2022-10-24.
[3] 屈鹏霏, 金鹏, 周广迪, 王镇, 王占国. 提高薄膜厚度均匀性的制备方法. CN: CN114775043A, 2022-07-22.
[4] 屈鹏霏, 金鹏, 周广迪, 王镇, 王占国. 提高薄膜厚度均匀性的制备方法. CN202210420002.0, 2022-04-20.
[5] 徐鹏飞, 冯梦阳, 金鹏, 周广迪, 霍晓迪, 屈鹏霏, 王占国. 垂直结构的金刚石深耗尽型场效应晶体管及制备方法. CN: CN113594230A, 2021-11-02.
[6] 陈亚男, 霍晓迪, 周广迪, 金鹏, 王占国. 隔热导电偏压衬底托. CN: CN111647878B, 2021-07-27.
[7] 冯梦阳, 孟宪权, 金鹏, 周广迪, 霍晓迪, 徐鹏飞, 王占国. 一种应用于小尺寸样品光刻工艺的方法. CN: CN113031392A, 2021-06-25.
[8] 周广迪, 金鹏, 屈鹏霏, 霍晓迪, 王占国. 用于等离子体化学气相的样品支架. CN: CN112899659A, 2021-06-04.
[9] 金鹏, 王占国. 衬底托. CN: CN212357378U, 2021-01-15.
[10] 金鹏, 王占国. 热蒸发源炉. CN: CN212223085U, 2020-12-25.
[11] 霍晓迪, 金鹏, 王占国, 周广迪. 一种高均一性半导体膜的生长装置及制备方法. CN: CN111826634A, 2020-10-27.
[12] 金鹏, 王占国. 材料生长速率测量方法. CN: CN111653324A, 2020-09-11.
[13] 金鹏, 王占国. 衬底托. CN: CN111471976A, 2020-07-31.
[14] 霍晓迪, 金鹏, 王占国, 杜鹏. 用于异质外延的石墨烯中间层柔性衬底及其制备方法. CN: CN111341836A, 2020-06-26.
[15] 龚猛, 周广迪, 郁万成, 金鹏, 王占国. 一种高速高质量单晶金刚石的生长方法. CN: CN108611680B, 2020-06-19.
[16] 周广迪, 金鹏, 王占国, 杜鹏. 一种缓冲层结构及其制备方法. CN: CN111048404A, 2020-04-21.
[17] 霍晓迪, 金鹏, 王占国, 杜鹏. 基于等离子工艺的同步生成并图形化石墨烯的方法. CN: CN110993492A, 2020-04-10.
[18] 张威, 金鹏, 王占国, 杜鹏. 一种用于微波等离子体化学气相沉积装置的样品台结构. CN: CN110983298A, 2020-04-10.
[19] 郁万成, 金鹏, 王占国. 基于微波等离子体化学气相沉积的石墨烯制备方法. CN: CN109852944A, 2019-06-07.
[20] 龚猛, 周广迪, 郁万成, 金鹏, 王占国. 一种高速高质量单晶金刚石的生长方法. CN: CN108611680A, 2018-10-02.
[21] 张烨, 陈亚男, 金鹏, 郁万成, 王占国. 半导体测试装置及方法. CN: CN107589360A, 2018-01-16.
[22] 付方彬, 金鹏, 王占国. 用于微波等离子体化学气相沉积设备的组合式衬底基座. CN: CN107304475A, 2017-10-31.
[23] 郁万成, 金鹏, 张烨, 王占国. 异质外延金刚石及其制备方法. CN: CN106835274A, 2017-06-13.
[24] 刘雅丽, 金鹏, 王占国. 用于AlGaN光电器件的多量子阱结构及制备方法. CN: CN105845796A, 2016-08-10.
[25] 王飞飞, 吴艳华, 胡发杰, 金鹏, 王占国. 曲率渐变的弯曲波导量子点超辐射发光管及其制备方法. CN: CN104485403A, 2015-04-01.
[26] 吴艳华, 王飞飞, 胡发杰, 金鹏, 王占国. 掩模板、套刻对准方法及制备脊形波导激光器的方法. CN: CN104460223A, 2015-03-25.
[27] 陈红梅, 金鹏, 王占国. 输出功率和光谱形状独立可调的发光二极管的制作方法. CN: CN103824920A, 2014-05-28.
[28] 毛德丰, 李维, 王维颖, 金鹏, 王占国. 一种高Al组分AlGaN薄膜的制备方法. CN: CN103806104A, 2014-05-21.
[29] 王维颖, 毛德丰, 李维, 金鹏, 王占国. 提高AlN外延薄膜荧光强度的方法. CN: CN103578977A, 2014-02-12.
[30] 李维, 毛德丰, 王维颖, 金鹏, 王占国. 高In组分AlInN薄膜的制备方法. CN: CN103346068A, 2013-10-09.
[31] 金鹏, 魏恒, 吴艳华, 陈红梅, 王占国. 复合构型可调谐光栅外腔双模激光器. CN: CN103326239A, 2013-09-25.
[32] 吴剑, 金鹏, 王占国. 一种锁模外腔半导体激光器. CN: CN103227417A, 2013-07-31.
[33] 魏恒, 金鹏, 王占国. 滤波式波长可调谐外腔激光器. CN: CN103117506A, 2013-05-22.
[34] 金鹏, 王占国. 掺杂半导体材料生长设备及方法. CN: CN102732957A, 2012-10-17.
[35] 李新坤, 金鹏, 王占国. 用于多电流注入区器件的倒装焊结构及其制作方法. CN: CN102427108A, 2012-04-25.
[36] 金鹏, 王占国. 条纹相机反射式离轴光学耦合装置. CN: CN102252754A, 2011-11-23.
[37] 金鹏, 王占国. 深紫外激光光致发光光谱仪. CN: CN102213617A, 2011-10-12.
[38] 梁德春, 李新坤, 金鹏, 王占国. 砷化镓基短波长量子点超辐射发光二极管. CN: CN102136534A, 2011-07-27.
[39] 安琪, 金鹏, 王占国. 光栅耦合表面发射的超辐射发光二极管结构. CN: CN102054909A, 2011-05-11.
[40] 吕雪芹, 金鹏, 王占国. 一种提高光栅外腔激光器光学质量的方法. CN: CN102055128A, 2011-05-11.
[41] 于理科, 徐波, 王占国, 金鹏, 赵昶, 张秀兰. 1.02-1.08微米波段InGaAs/GaAs量子点外延结构及其制造方法. CN: CN101505034B, 2010-12-08.
[42] 刘宁, 金鹏, 王占国. 长波长砷化铟/砷化镓量子点材料. CN: CN101113328B, 2010-11-10.
[43] 王佐才, 金鹏, 王占国. 制备多区域结构超辐射发光管电学隔离的方法. CN: CN101740455A, 2010-06-16.
[44] 唐光华, 徐波, 叶小玲, 金鹏, 刘峰奇, 陈涌海, 王占国, 姜立稳, 孔金霞, 孔宁. 光伏型InAs量子点红外探测器结构. CN: CN101740655A, 2010-06-16.
[45] 梁凌燕, 叶小玲, 金鹏, 陈涌海, 徐 波, 王占国. 控制自组织铟镓砷量子点成核的生长方法. CN: CN101540357A, 2009-09-23.
[46] 于理科, 徐波, 王占国, 金鹏, 赵昶, 张秀兰. 1.02-1.08微米波段InGaAs/GaAs量子点外延结构及其制造方法. CN: CN101505034A, 2009-08-12.
[47] 梁志梅, 金鹏, 王占国. 量子点光调制器有源区结构. CN: CN101414063A, 2009-04-22.
[48] 赵超, 徐 波, 陈涌海, 金鹏, 王占国. 砷化铟和砷化镓的纳米结构及其制作方法. CN: CN100468802C, 2009-03-11.
[49] 刘宁, 金鹏, 王占国. 宽光谱砷化铟/砷化铝镓量子点材料生长方法. CN: CN100459045C, 2009-02-04.
[50] 金灿, 金鹏, 王占国. 提高自组织量子点光学性质温度稳定性的材料结构. CN: CN101308888A, 2008-11-19.
[51] 周慧英, 曲胜春, 金鹏, 徐波, 王赤云, 刘俊朋, 王智杰, 王占国. 在半导体衬底上制备有序砷化铟量子点的方法. CN: CN101241850A, 2008-08-13.
[52] 周慧英, 曲胜春, 金鹏, 徐波, 王赤云, 刘俊朋, 王占国. 在半导体衬底上制备量子环结构的方法. CN: CN101241849A, 2008-08-13.
[53] 焦玉恒, 吴巨, 徐波, 金鹏, 王占国. 一种量子点材料结构及其生长方法. CN: CN101145590A, 2008-03-19.
[54] 金鹏, 王占国. 半导体量子点/量子阱导带内跃迁材料结构. CN: CN101038946A, 2007-09-19.
[55] 刘宁, 金鹏, 王占国. 宽光谱砷化铟/砷化铟镓/砷化镓量子点材料生长方法. CN: CN101007944A, 2007-08-01.
[56] 于理科, 徐波, 王占国, 金鹏, 赵昶, 张秀兰. 一种亚分子单层量子点激光器材料的外延生长方法. CN: CN1925174A, 2007-03-07.
[57] 于理科, 徐波, 王占国, 金鹏, 赵昶, 张秀兰. 一种大功率半导体量子点激光器材料的外延生长方法. CN: CN1925175A, 2007-03-07.
[58] 王元立, 吴 巨, 金鹏, 叶小玲, 张春玲, 黄秀颀, 陈涌海, 王占国. 以原位垂直超晶格为模板定位生长量子线或点的方法. CN: CN1892986A, 2007-01-10.
[59] 陈涌海, 张春玲, 崔草香, 徐 波, 金鹏, 刘峰奇, 王占国. 在解理面上制作半导体纳米结构的方法. CN: CN1725436A, 2006-01-25.
[60] 张子旸, 王占国, 徐波, 金鹏, 刘峰奇. 一种自组织量子点为有源区的超辐射发光管. 中国: CN1490887, 2004-04-21.

出版信息

   
发表论文
[1] 冯梦阳, 金鹏. One-step growth of a nearly 2 mm thick CVD single crystal diamond with an enlarged surface by optimizing the substrate holder structure. Journal of Crystal Growth[J]. 2023, 603: 127071-, [2] Qu, Pengfei, Jin, Peng, Zhou, Guangdi, Wang, Zhen, Wu, Ju, Wang, Zhanguo. Epitaxial growth of high-quality yttria-stabilized zirconia films with uniform thickness on silicon by the combination of PLD and RF sputtering. SURFACE & COATINGS TECHNOLOGY[J]. 2023, 456: 129267-, http://dx.doi.org/10.1016/j.surfcoat.2023.129267.
[3] 许敦洲, 金鹏, 徐鹏飞, 冯梦阳, 吴巨, 王占国. Investigation of Ga2O3/diamond heterostructure solar-blind avalanche photodiode via TCAD simulation. Chin. Phys. B[J]. 2023, [4] 屈鹏霏, 金鹏, 周广迪, 王镇, 许敦洲. 单晶金刚石异质外延用铱复合衬底研究现状. 人工晶体学报[J]. 2023, 52(05期): 857-877, [5] Zhou, Guangdi, Qu, Pengfei, Huo, Xiaodi, Jin, Peng, Wu, Ju, Wang, Zhanguo. The deposition of Ir/YSZ double-layer thin films on silicon by PLD and magnetron sputtering: Growth kinetics and the effects of oxygen. RESULTS IN PHYSICS[J]. 2023, 47: http://dx.doi.org/10.1016/j.rinp.2023.106357.
[6] Wang, Yixin, Yuan, Ye, Tao, Renchun, Liu, Shangfeng, Wang, Tao, Sheng, Shanshan, Quach, Patrick, Cm, Manoj Kumar, Chen, Zhaoying, Liu, Fang, Rong, Xin, Jin, Peng, Feng, Mengyang, Li, Hongwei, Guo, Shiping, Ge, Weikun, Lee, June Key, Shen, Bo, Wang, Xinqiang. High-Efficiency E-Beam Pumped Deep-Ultraviolet Surface Emitter Based on AlGaN Ultra-Thin Staggered Quantum Wells. ADVANCED OPTICAL MATERIALS[J]. 2022, 10(18): http://dx.doi.org/10.1002/adom.202200011.
[7] Feng, Mengyang, Jin, Peng, Meng, Xianquan, Xu, Pengfei, Huo, Xiaodi, Zhou, Guangdi, Qu, Pengfei, Wu, Ju, Wang, Zhanguo. Performance of metal-semiconductor-metal structured diamond deep-ultraviolet photodetector with a large active area. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2022, 55(40): [8] Pengfei Xu, 金鹏, Mengyang Feng, Pengfei Qu, Xiaodi Huo, Ju Wu, Zhanguo Wang. TCAD simulation of vertical diamond MISFET based on deep depletion characteristics with high current output capacity. MICRO AND NANOSTRUCTURES[J]. 2022, 169: http://dx.doi.org/10.1016/j.micrna.2022.207368.
[9] Huo, Xiaodi, Zhou, Guangdi, Feng, Mengyang, Jin, Peng, Wu, Ju, Wang, Zhanguo. Effects of deposition time on growth of Ir buffer layer on MgO(100) support layer by magnetron sputtering. RESULTS IN PHYSICS[J]. 2021, 30: http://dx.doi.org/10.1016/j.rinp.2021.104878.
[10] Chen, Yanan, Jin, Peng, Zhou, Guangdi, Feng, Mengyang, Fu, Fangbin, Wu, Ju, Wu, Zhangu. Investigation of excitonic recombination in single-crystal diamond with cathodoluminescence spectroscopy. JOURNAL OF LUMINESCENCE[J]. 2020, 226: http://dx.doi.org/10.1016/j.jlumin.2020.117428.
[11] Jin Peng. Research on the photoluminescence of spectral broadening by rapied thermal annealing on InAs/GaAs quantum dots. Journal of Semiconductors. 2020, [12] Wang, Ye, Meng, Junhua, Tian, Yan, Chen, Yanan, Wang, Gaokai, Yin, Zhigang, Jin, Peng, You, Jingbi, Wu, Jinliang, Zhang, Xingwang. Deep Ultraviolet Photodetectors Based on Carbon-Doped Two-Dimensional Hexagonal Boron Nitride. ACS APPLIED MATERIALS & INTERFACES[J]. 2020, 12(24): 27361-27367, http://dx.doi.org/10.1021/acsami.0c05850.
[13] Dandan Ning, Yanan Chen, Xinkun Li, Dechun Liang, Shufang Ma, Peng Jin, Zhanguo Wang. Research on the photoluminescence of spectral broadening by rapid thermal annealing on InAs/GaAs quantum dots. 半导体学报:英文版[J]. 2020, 41(12): 1-6, http://lib.cqvip.com/Qikan/Article/Detail?id=7103473584.
[14] Zhou, Guangdi, Jin, Peng, Wang, Yuan, Pei, Guangling, Wu, Ju, Wang, Zhanguo. X-ray diffraction analysis of the yttria stabilized zirconia powder by mechanical alloying and sintering. CERAMICS INTERNATIONAL[J]. 2020, 46(7): 9691-9697, http://dx.doi.org/10.1016/j.ceramint.2019.12.236.
[15] Yixin Wang, Xin Rong, Sergey Ivanov, Valentin Jmerik, Zhaoying Chen, Hui Wang, Tao Wang, Ping Wang, Peng Jin, Yanan Chen, Vladimir Kozlovsky, Dmitry Sviridov, Michail Zverev, Elena Zhdanova, Nikita Gamov, Valentin Studenov, Hideto Miyake, Hongwei Li, Shiping Guo, Xuelin Yang, Fujun Xu, Tongjun Yu, Zhixin Qin, Weikun Ge, Bo Shen, Xinqiang Wang. Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 Watt. ADVANCED OPTICAL MATERIALS[J]. 2019, 7(10): 1801763-, https://www.webofscience.com/wos/woscc/full-record/WOS:000471340100012.
[16] Jin Peng. Structural Strain in Single Layer Graphene Fabricated on SiC. Materials Science Forum. 2019, [17] Gao, Menglei, Meng, Junhua, Chen, Yanan, Ye, Siyuan, Wang, Ye, Ding, Congyu, Li, Yubo, Yin, Zhigang, Zeng, Xiangbo, You, Jingbi, Jin, Peng, Zhang, Xingwang. Catalyst-free growth of two-dimensional hexagonal boron nitride few-layers on sapphire for deep ultraviolet photodetectors. JOURNAL OF MATERIALS CHEMISTRY C[J]. 2019, 7(47): 14999-15006, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000506890600021.
[18] Yuan Xiaolu, Zheng Yuting, Zhu Xiaohua, Liu Jinlong, Liu Jiangwei, Li Chengming, Jin Peng, Wang Zhanguo. Recent progress in diamond-based MOSFETs. INTERNATIONAL JOURNAL OF MINERALS, METALLURGY AND MATERIALS[J]. 2019, 26(10): 1195-1205, http://lib.cqvip.com/Qikan/Article/Detail?id=7100124653.
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[86] 肖虎, 孟宪权, 朱振华, 金鹏, 刘峰奇, 王占国. 二次退火制备Ⅲ-Ⅴ族半导体量子点. 人工晶体学报[J]. 2010, 39(3): 747-750, http://lib.cqvip.com/Qikan/Article/Detail?id=34354662.
[87] Lue XueQin, Jin Peng, Wang ZhanGuo. A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission. CHINESE PHYSICS B[J]. 2010, 19(1): http://lib.cqvip.com/Qikan/Article/Detail?id=32672916.
[88] 吕雪芹, 王佐才, 金鹏, 王占国. 量子点超辐射发光管研究进展. 微纳电子技术[J]. 2009, 46(8): 449-456, http://lib.cqvip.com/Qikan/Article/Detail?id=31370947.
[89] 梁志梅, 金灿, 金鹏, 吴巨, 王占国. Temperature Insensitivity of Optical Properties of InAs/GaAs Quantum Dots due to a Pregrown InGaAs Quantum Well. 中国物理快报:英文版[J]. 2009, 26(1): 328-330, http://lib.cqvip.com/Qikan/Article/Detail?id=29552962.
[90] 吕雪芹, 王佐才, 金鹏, 王占国. 量子点超辐射发光管研究进展(续). 微纳电子技术[J]. 2009, 46(9): 513-517, http://lib.cqvip.com/Qikan/Article/Detail?id=31677598.
[91] Liang ZhiMei, Jin Can, Jin Peng, Wu Ju, Wang ZhanGuo. Temperature Insensitivity of Optical Properties of InAs/GaAs Quantum Dots due to a Pregrown InGaAs Quantum Well. CHINESE PHYSICS LETTERS[J]. 2009, 26(1): 328-330, http://lib.cqvip.com/Qikan/Article/Detail?id=29552962.
[92] 吴巨, 金鹏, 吕小晶, 王占国, 曾一平, 王宝强, 姚然. MBE自组装量子点生长和结构形态研究. 微纳电子技术[J]. 2008, 45(8): 435-439,457, http://lib.cqvip.com/Qikan/Article/Detail?id=28279239.
[93] 周立, 陈涌海, 金鹏, 王占国. A面(11-20)ZnO薄膜中杂质的偏振PL谱研究. 光散射学报[J]. 2008, 20(2): 186-189, http://lib.cqvip.com/Qikan/Article/Detail?id=27578656.
[94] 梁志梅, 吴巨, 金鹏, 吕雪芹, 王占国. InAs/GaAs量子点光致发光光谱多峰结构发光本质. 半导体学报[J]. 2008, 29(11): 2121-2124, http://lib.cqvip.com/Qikan/Article/Detail?id=28718883.
[95] 吴巨, 金鹏, 吕小晶, 王占国, 曾一平, 王宝强, 姚然. MBE自组装量子点生长和结构形态研究(续). 微纳电子技术[J]. 2008, 45(9): 498-504, http://lib.cqvip.com/Qikan/Article/Detail?id=28302639.
[96] 金灿, 金鹏, 吴巨, 王占国. 隧穿注入量子点激光器概述. 微纳电子技术[J]. 2007, 44(6): 289-294, http://lib.cqvip.com/Qikan/Article/Detail?id=24736980.
[97] 刘宁, 金鹏, 吴巨, 王占国. 利用多层堆垛InAs/GaAs量子点结构实现1.3μm光致发光. 半导体学报[J]. 2007, 215-217, http://lib.cqvip.com/Qikan/Article/Detail?id=1001096886.
[98] Sun, Jie, Jin, Peng, Zhao, Chang, Yu, Like, Ye, Xiaoling, Xu, Bo, Chen, Yonghai, Wang, Zhanguo. Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer. JOURNAL OF THE ELECTROCHEMICAL SOCIETY[J]. 2006, 153(7): G703-G706, http://ir.semi.ac.cn/handle/172111/10638.
[99] 李凯, 叶小玲, 金鹏, 王占国. GaAs基上的InAs量子环制备. 固体电子学研究与进展[J]. 2006, 26(4): 432-435, http://ir.semi.ac.cn/handle/172111/16463.
[100] 李若园, 王占国, 徐波, 金鹏, 张春玲, 郭霞, 陈敏. AlxGa1-xAs/GaAs分布布拉格反射镜的湿法氧化. 半导体学报[J]. 2005, 26(8): 1519-1523, http://lib.cqvip.com/Qikan/Article/Detail?id=20135704.
[101] 路秀真, 刘峰奇, 刘俊岐, 金鹏, 王占国. High Temperature Operation of 5.5μm Strain-Compensated Quantum Cascaded Lasers. 中国物理快报:英文版[J]. 2005, 22(12): 3077-3079, http://lib.cqvip.com/Qikan/Article/Detail?id=20727088.
[102] Lu Xiuzhen, Liu Fengqi, Liu Junqi, Jin Peng, Wang Zhanguo. 室温激射应变补偿5.5μm量子级联激光器. 半导体学报[J]. 2005, 26(12): 2267-2270, http://lib.cqvip.com/Qikan/Article/Detail?id=20936146.
[103] LU XiuZhen, LIU FengQi, LIU JunQi, JIN Peng, WANG ZhanGuo. High Temperature Operation of 5.5μm Strain-Compensated Quantum Cascaded Lasers. 中国物理快报:英文版[J]. 2005, 22(12): 3077-3079, http://lib.cqvip.com/Qikan/Article/Detail?id=20727088.
[104] Li Yuoyuan, Wang Zhanguo, Xu Bo, Jin Peng, Zhang Chunling, Guo Xia, Chen Min. Wet Oxidation of AlxGa1-xAs/GaAs Distributed Bragg Reflectors. 半导体学报[J]. 2005, 26(8): 1519-1523, http://ir.semi.ac.cn/handle/172111/16923.
[105] 路秀真, 刘峰奇, 刘俊岐, 金鹏, 王占国. 室温激射应变补偿5.5μm量子级联激光器. 半导体学报[J]. 2005, 26(12): 2267-2270, http://lib.cqvip.com/Qikan/Article/Detail?id=20936146.
[106] 张春玲, 赵凤瑗, 徐波, 金鹏, 王占国. 利用GaAs基上InGaAs应变层制备有序排列的InAs量子点. 半导体学报[J]. 2004, 25(12): 1647-1651, http://lib.cqvip.com/Qikan/Article/Detail?id=12030921.
[107] 金鹏. InAs/GaAs自组装量子点结构和光学性质研究. 2003, http://ir.semi.ac.cn/handle/172111/5249.
[108] 金鹏, 李成明, 张子旸, 孟宪权, 徐波, 刘峰奇, 王占国, 李乙钢, 张存洲, 潘士宏. 应变层InGaAsP量子阱激光器结构的调制光谱研究. 微纳电子技术[J]. 2003, 40(3): 11-13,32, http://lib.cqvip.com/Qikan/Article/Detail?id=7504133.
发表著作
(1) 第五章 III-V族化合物半导体材料”,《半导体材料研究进展》第一卷,pp.235-310,Chapter 5 III-V Compound Semiconductor Materials, in Research Progress of Semiconductor Materials, Volume 1, pp.235-310,高等教育出版社,2012-01,第1作者

科研活动

   
科研项目
(1) 半导体金刚石衬底材料研制,主持,市地级,2015-10--2017-09
(2) 微波等离子体化学汽相沉积系统,主持,院级级,2015-01--2016-07
(3) 量子器件集成控温技术研究,主持,专项级,2014-12--2015-12
(4) 100kHz 窄线宽激光光源(子课题),主持,国家级,2014-01--2016-12
(5) 微小型碱金属样品池,主持,其他级,2013-10--2014-07
(6) 波长和重复频率可调谐外腔锁模量子点激光器,主持,国家级,2013-01--2016-12
(7) 全组分可调III族氮化物半导体材料和器件物理(子课题),主持,国家级,2011-09--2016-08

指导学生

已指导学生

吴剑  硕士研究生  080501-材料物理与化学  

陈红梅  硕士研究生  080501-材料物理与化学  

现指导学生

付方彬  硕士研究生  085204-材料工程  

刘雅丽  博士研究生  080501-材料物理与化学  

王飞飞  博士研究生  080501-材料物理与化学  

陈亚男  硕士研究生  080501-材料物理与化学