基本信息
陈平平  男  博导  中国科学院上海技术物理研究所
电子邮件: ppchen@mail.sitp.ac.cn
通信地址: 上海市玉田路500号
邮政编码: 200083

研究领域

   

招生信息

   
招生专业
070205-凝聚态物理
080903-微电子学与固体电子学
招生方向
半导体材料和物理
低维半导体材料

教育背景

1995-09--1999-03   南京大学   博士
1991-09--1994-08   中科院上海技术物理研究所   硕士
1987-09--1991-06   杭州大学   学士
学历
   
学位
   

工作经历

   
工作简历
2004-01~现在, 中科院上海技术物理研究所, 副研究员,研究员
2001-06~2003-12,日本 东北大学, 博士后(COE研究员)
1999-03~2001-05,中科院上海技术物理研究所, 博士后
1995-09~1999-03,南京大学, 博士
1991-09~1994-08,中科院上海技术物理研究所, 硕士
1987-09~1991-06,杭州大学, 学士
社会兼职
   

教授课程

   

专利与奖励

   
奖励信息
   
专利成果
( 1 )  Bi元素调控GaAs基纳米线晶体结构的分子束外延生长方法, 2013, 第 1 作者, 专利号: 201310251573.7
( 2 ) 一种可用作光学微腔的GaSb纳米盘的分子束外延生长方法, 2015, 第 1 作者, 专利号: 201510106443.3
( 3 ) 一种基于共振遂穿效应的GaAs基双色量子阱红外探测器:, 2018, 第 3 作者, 专利号: 201810598277.7

出版信息

   
发表论文
(1) Ultrasensitive Mid-wavelength Infrared Photodetection Based on a Single InAs Nanowire, ACS nano, 2019, 第 11 作者
(2) High-responsivity and polarization-discriminating terahertz photodetector based on plasmonic resonance, APPLIED PHYSICS LETTERS, 2019, 第 11 作者
(3) Epitaxial GaAs/AlGaAs core-multishell nanowires with enhanced photoluminescence lifetime, Nanoscale, 2019, 第 11 作者
(4) Cut-off wavelength manipulation of pixel-level plasmonic microcavity for long wavelength infrared detection, APPLIED PHYSICS LETTERS, 2019, 第 8 作者
(5) Raman spectroscopic determination of hole concentration in undoped GaAsBi, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019, 第 5 作者
(6) Anomalous arsenic diffusion at InGaAs/InP interface, MATERIALS RESEARCH EXPRESS, 2019, 第 4 作者
(7) Imaging of nonlocal hot-electron energy dissipation via shot noise, Science, 2018, 第 5 作者
(8) Photoreflectance and photoreflectance excitation study of optical transitions in GaAsBi /GaAs heterostructure, J.Appl.Phys., 2018, 第 3 作者
(9) High intersubband absorption in long-wave quantum well infrared photodetector based on waveguide resonance, J.Phys.D, 2018, 第 11 作者
(10) In Situ TEM Observation of Crystal Structure Transformation in InAs Nanowires on Atomic Scale, Nano Letters, 2018, 第 5 作者
(11) Formation of GaAs/GaSb Core-Shell Heterostructured Nanowires Grown by Molecular-Beam Epitaxy, CRYSTALS, 2017, 第 11 作者
(12) Self-Assembly Growth of In-Rich InGaAs Core−Shell Structured Nanowires with Remarkable Near-Infrared Photoresponsivity, Nano letter, 2017, 第 4 作者
(13) Low temperature photo-induced carrier dynamics in the GaAs0.985N0.015 alloy, JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 第 4 作者
(14) High efficiency optical coupling in long wavelength quantum cascade infrared detector via quasi-one-dimensional grating plasmonic micro-cavity, JOURNAL OF APPLIED PHYSICS, 2017, 第 6 作者
(15) Photoconductivity of InN grown by MOVPE: Low temperature and weak light illumination, APPLIED PHYSICS LETTERS, 2017, 第 3 作者
(16) Unexpected formation of a hierarchical structure in ternary InGaAs nanowires via “one-pot” growth, Nanoscale, 2017, 第 3 作者
(17) Phase purification of GaAs nanowires by prolonging the growth duration in MBE, Journal of Materials Chemistry C, 2017, 第 4 作者
(18) Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire, NANO LETTERS, 2016, 第 10 作者
(19) Highly photoresponsive charge-sensitive infrared phototransistors with a dynamically controlled optical gate, APPLIED PHYSICS LETTERS, 2016, 第 5 作者
(20) Pixel-level plasmonic microcavity infrared photodetector, SCIENTIFIC REPORTS, 2016, 第 5 作者
(21) Angular dependence of optical modes in metal-insulator-metal coupled quantum well infrared photodetector, AIP ADVANCES, 2016, 第 5 作者
(22) Fabrication of individual carbon nanotubes and their arrays in a transmission electron microscope, CARBON, 2016, 第 6 作者
(23) Orientation Dependence of Electromechanical Characteristics of Defect-free InAs Nanowires, NANO LETTERS, 2016, 第 4 作者
(24) Quality Control of GaAs Nanowire Structures by Limiting As Flux in Molecular Beam Epitaxy, JOURNAL OF PHYSICAL CHEMISTRY C, 2016, 第 6 作者
(25) Controlling the crystal phase and structural quality of epitaxial InAs nanowires by tuning V/III ratio in molecular beam epitaxy, Acta Materialia, 2015, 第 3 作者
(26) Catalyst Orientation-Induced Growth of Defect-Free Zinc-BlendeStructured (001) InAs Nanowires , Nano Letters, 2015, 第 4 作者
(27) Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures, Nanoscale Research Letters, 2015, 第 11 作者
(28) Quantum dot single-photon switches of resonant tunneling current fordiscriminating-photon-number detection , SCIENTIFIC REPORTS, 2015, 第 4 作者
(29) Morphology and Microstructure of InAs Nanowires on GaAs Substrates Grown by Molecular Beam Epitaxy, CHINESE PHYSICS LETTERS, 2014, 第 11 作者
(30) Photocurrent spectrum study of a quantum dot single-photon detectorbased on resonant tunneling effect with near-infrared response , APPLIED PHYSICS LETTERS, 2014, 第 11 作者
(31) Optical spin polarization and Hanle effect in GaAsSb: Temperature dependence , APPLIED PHYSICS LETTERS, 2014, 第 3 作者
(32) Photoluminescence of the single wurtzite GaAs nanowire with different powers and temperatures,  Journal Of Luminescence, 2014, 第 11 作者
(33) Single InAs Nanowire Room-Temperature Near-Infrared Photodetectors, Acs Nano, 2014, 第 11 作者
(34) Raman mapping of laser-induced changes and ablation of InAs nanowires, Applied Physics A, 2014, 第 2 作者
(35) Structure and Quality controlled growth of inAs Nanowires through Catalyst engineering , Nano Research, 2014, 第 4 作者
(36) Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy, Applied Physics Letters, 2014, 第 11 作者
(37) High-Polarization-Discriminating Infrared Detection Using a Single Quantum Well Sandwiched in Plasmonic Micro-Cavity , SCIENTIFIC REPORTS, 2014, 第 11 作者
(38) Far infrared reflection spectra of InAsxSb1?x (x=0-0.4) thin films, J. Appl. Phys, 2013, 第 3 作者
(39) Impact of growth parameters on the morphology and microstructureof epitaxial of GaAs nanowires grown by molecular beam epitaxy , Journal of Alloys and Compounds, 2013, 第 11 作者
(40) Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy , Appl. Phys. Lett. , 2013, 第 11 作者
(41) Distinct photocurrent response of individual GaAs nanowires induced by n-type doping., ACS Nano, 2012, 第 11 作者
(42) Laser induced modification and ablation of InAs nanowires , JOURNAL OF APPLIED PHYSICS , 2012, 第 2 作者
(43) Weak field magnetoresistance of narrow-gap semiconductor InSb, JOURNAL OF APPLIED PHYSICS, 2011, 第 11 作者
(44) Temperature-Dependent Optical Properties of InAs/GaAs Self-Assembled Quantum Dots: Spectroscopic Measurements and an Eight-Band Study , CHINESE PHYSICS LETTERS , 2011, 第 2 作者
(45) The effects of growth parameters on the RF-MBE growth of dilute InNSb films, JOURNAL OF PHYSICS D: APPLIED PHYSICS, 2010, 第 11 作者
(46) Raman study of gap mode and lattice disorder effect in InN films prepared by plasma-assisted molecular beam epitaxy, Acta Materialia, 2007, 第 3 作者
(47) Effects of rapid thermal annealing on the properties of GaNxAs1x, JOURNAL OF APPLIED PHYSICS, 2007, 第 11 作者
(48) Optical properties of InN films grown by molecular beam epitaxy at different conditions, Thin Solid Films, 2006, 第 1 作者
(49) Piezomodulated reflectance study of self-assembled InAs quantum dots-in-a-well, Journal of Crystal Growth, 2006, 第 2 作者
(50) MBE growth and properties of InN-based dilute magnetic semiconductors, Journal of Crystal Growth, 2004, 第 1 作者
(51) InMnN: a nitride-based diluted magnetic semiconductor, Solid State Communications, 2004, 第 1 作者
(52) MBE growth of GaMnN diluted magnetic semiconductors and its magnetic properties, Journal of Crystal Growth, 2003, 第 1 作者
发表著作
   

科研活动

   
科研项目
( 1 ) 小量子体系光-电量子态互作用及其调控, 参与, 国家级, 2011-01--2015-12
( 2 ) 高质量InSb纳米线的分子束外延生长,微结构及输运特性研究, 主持, 国家级, 2014-01--2017-12
( 3 ) 量子点操控的单光子探测和圆偏振单光子发射, 参与, 国家级, 2014-01--2017-12
( 4 ) 人造拓扑超导体与Majorana费米子的研究, 参与, 国家级, 2017-01--2020-12
( 5 ) 低维半导体异质结构光电探测材料及器件验证研究, 参与, 国家级, 2016-10--2020-12
参与会议
   

合作情况

   
项目协作单位
   

指导学生