基本信息
杨涛  男  博导  中国科学院半导体研究所
电子邮件: tyang@semi.ac.cn
通信地址: 北京市海淀区清华东路甲35号中科院半导体研究所
邮政编码: 100083

招生信息

   
招生专业
080903-微电子学与固体电子学
080901-物理电子学
招生方向
低维半导体异质结构材料外延及激光器、探测器和太阳能电池等器件制备研究
半导体纳米线生长及场效应晶体管等新型纳米器件制备研究

教育背景

1994-04--1997-03   日本 德岛大学电气电子工程系   工学博士
1986-09--1989-03   哈尔滨工业大学应用物理系   理学硕士
1980-09--1984-06   黑龙江大学物理系   理学学士

工作经历

   
工作简历
2015-03~现在, 中国科学院大学, 岗位教授
2005-12~现在, 中国科学院半导体研究所, 研究员
2002-12~2005-12,东京大学生产技术研究所, 研究员
2000-04~2002-12,日本 新能源产业技术综合开发机构(NEDO), NEDO Fellow
1997-04~2000-03,日本 日立公司中央研究所, 研究员
1994-04~1997-03,日本 德岛大学电气电子工程系, 工学博士
1993-06~1994-03,日本 德岛大学电气电子工程系, 访问学者
1989-12~1993-05,哈尔滨工业大学应用物理系, 讲师
1986-09~1989-03,哈尔滨工业大学应用物理系, 理学硕士
1984-07~1989-11,哈尔滨工业大学应用物理系, 助教
1980-09~1984-06,黑龙江大学物理系, 理学学士

教授课程

化合物半导体材料生长与表征

专利与奖励

   
奖励信息
(1) 朱李月华优秀教师奖, , 部委级, 2016
(2) 中国科学院****, , 部委级, 2007
(3) NEDO Fellowship, 部委级, 2000
(4) 日本 德岛大学国际交流研究奖, 研究所(学校), 1997
专利成果
( 1 ) 制作砷化铟/磷化铟量子点激光器有源区的方法, 2013, 第 3 作者, 专利号: ZL 201210150154.X
( 2 ) 在磷化铟衬底上砷化铟/铟镓砷量子阱材料的方法, 2012, 第 2 作者, 专利号: ZL 201110100538.6
( 3 ) 磷化镓铝作为应力补偿层的砷化铟/砷化镓量子点太阳电池的制作, 2011, 第 3 作者, 专利号: ZL 201010217374.0
( 4 ) 一种通过腔面镀膜来提高量子点激光器温度稳定性的方法, 2011, 第 2 作者, 专利号: ZL 200910088813.X
( 5 ) 高性能铟砷/镓砷量子点材料有源区的外延生长方法, 2010, 第 1 作者, 专利号: ZL 00810101761.0
( 6 ) 硅基高晶体质量InAsSb平面纳米线的生长方法, 2017, 第 1 作者, 专利号: ZL201410785433.2
( 7 ) 磷化铟基窄脊波导半导体激光器的制备方法, 2016, 第 1 作者, 专利号: 201610333092.4
( 8 ) 硅基InAs(Sb)/GaSb核壳异质结垂直纳米线阵列及其生长方法, 2017, 第 1 作者, 专利号: 201710062927.1
( 9 ) 多模激光器及其多模调节方法, 2017, 第 1 作者, 专利号: 201710342201.3
( 10 ) Si掺杂InAs/GaAs量子点激光器及其制备方法, 2017, 第 1 作者, 专利号: 201710870861.9
( 11 ) 基于磷化铟基耦合脊阵列的半导体激光器及其制备方法, 2018, 第 1 作者, 专利号: 201810151209.6
( 12 ) 制作宽光谱砷化铟/磷化铟量子点激光器有源区的方法, 2017, 第 1 作者, 专利号: ZL 201510012713.4
( 13 ) 铝掺杂氧化锌透明导电薄膜、制备方法及薄膜太阳能电池, 2017, 第 2 作者, 专利号: 201710877957.8
( 14 ) 低电阻层状结构正交相MoO3-x薄膜的制备方法, 2018, 第 2 作者, 专利号: 201810534896.X
( 15 ) 一种光学粗糙且电学平坦型透明导电衬底的制备方法, 2018, 第 2 作者, 专利号: 201811108728.0

出版信息

   
发表论文
(1) Silicon photonic transceivers for application in data centers, J. Semicond., 2020, 通讯作者
(2) Single longitudinal mode GaAs-based quantum dot laser with refractive index perturbation, Applied Optics, 2020, 通讯作者
(3) Enhanced performance of InAs/GaAs quantum dot superluminescent diodes by direct Si-doping, AIP Advances, 2020, 通讯作者
(4) 1.3 μm 半导体量子点激光器的研究进展, Research Progress on 1.3 μm Semiconductor Quantum-Dot Lasers, 中国激光, 2020, 通讯作者
(5) 25 Gb/s directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot lasers up to 75°C, Chinese Optics Letter, 2020, 通讯作者
(6) 10-Gbps 20-km Feedback-Resistant Transmission Using Directly Modulated Quantum-Dot Lasers, IEEE PHOTONICS TECHNOLOGY LETTERS, 2020, 通讯作者
(7) Sol-gel derived Zn1-xMgxO :Al transparent conductive thin film and its application to thin film solar cells, Thin Solid Films, 2019, 通讯作者
(8) Optically rough and physically flat TCO substrate formed by coating ZnO thin film on pyramid-patterned glass substrate, Solar Energy Materials and Solar Cells, 2019, 通讯作者
(9) Surface Modification of Al-Doped ZnO Transparent Conducive Thin Films with Polycrystalline Zinc Molybdenum Oxide, ACS Applied Materials & Interfaces, 2019, 通讯作者
(10) Multibit Optoelectronic Memory in Top-Floating-Gated van der Waals Heterostructures, Advanced Functional Materials, 2019, 通讯作者
(11) 1–2.9-THz Tunable Terahertz Beat Signal Generation Based on InAs/InP Quantum-Dot Mode-Locked Laser, IEEE Photonics Technology Letters, 2018, 通讯作者
(12) Ultra-broadband tunable single and double-mode InAs/InP quantum dot external-cavity laser emitting around 1.65 μm, OPTICS LETTERS, 2018, 通讯作者
(13) Self-Flattened ZnO:Al Transparent Conductive Thin Films Derived by Sol–Gel Process, IEEE JOURNAL OF PHOTOVOLTAICS, 2018, 通讯作者
(14) Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core-Shell Nanowires, NANOSCALE RESEARCH LETTERS, 2018, 通讯作者
(15) Defect-free InAsSb nanowire arrays on Si substrates grown by selective-area metal-organic chemical vapor deposition, NANOTECHNOLOGY, 2018, 通讯作者
(16) Influences of Ridge-Waveguide Shape and Width on Performances of InP-Based Coupled Ridge-Waveguide Laser Arrays, IEEE JOURNAL OF QUANTUM ELECTRONICS, 2018, 通讯作者
(17) Widely Tunable InAs/InP Quantum-Dot External-Cavity Laser with Bent-Waveguide Structure, Journal of Nanoscience and Nanotechnology, 2018, 通讯作者
(18) InP-Based Coupled Ridge Waveguide Laser Arrays Emitting at 2.1 μm, Journal of Nanoscience and Nanotechnology, 2018, 通讯作者
(19) The effect of nanoscale steps on the self-catalyzed position-controlled InAs nanowire growth, JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2018, 通讯作者
(20) All-metal electrodes vertical gate-all-around device with self-catalyzed selective grown InAs NWs array, SCIENCE CHINA-INFORMATION SCIENCES, 2018, 通讯作者
(21) Improved performance of 1.3-μm InAs/GaAs quantum dot lasers by direct Si doping, Applied Physics Letters, 2018, 通讯作者
(22) Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition, NANOSCALE RESEARCH LETTERS, 2017, 通讯作者
(23) Continuously tunable mode-spacing of a dual-mode external cavity InAs/InP quantum dot laser, APPLIED OPTICS, 2017, 通讯作者
(24) Switching from Negative to Positive Photoconductivity toward Intrinsic Photoelectric Response in InAs Nanowire, ACS APPLIED MATERIALS & INTERFACES, 2017, 通讯作者
(25) Effect of nanohole size on selective area growth of InAs nanowire arrays on Si substrates, JOURNAL OF CRYSTAL GROWTH, 2017, 通讯作者
(26) Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot Lasers, CHINESE PHYSICS LETTERS, 2016, 通讯作者
(27) Selective-Area MOCVD Growth and Carrier-Transport-Type Control of InAs(Sb)/GaSb Core-Shell Nanowires, Nano Letters, 2016, 通讯作者
(28) 2004-nm Ridge-Waveguide Distributed Feedback Lasers with InGaAs Multi-Quantum Wells, IEEE Photonic Technology Letters, 2016, 通讯作者
(29) Ultrashort Pulse and High Power Mode-Locked Laser With Chirped InAs/InP Quantum Dot Active Layers, IEEE Photonic Technology Letters, 2016, 通讯作者
(30) Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts, Nano Letters, 2016, 通讯作者
(31) Flat-topped ultrabroad stimulated emission from chirped InAs/InP quantum dot laser with spectral width of 92 nm, APPLIED PHYSICS LETTERS, 2016, 通讯作者
(32) InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition, NANOTECHNOLOGY, 2016, 通讯作者
(33) Single-section mode-locked 1.55-mu m InAs/InP quantum dot lasers grown by MOVPE, OPTICS COMMUNICATIONS, 2016, 通讯作者
(34) Broadband tunable InAs/InP quantum dot external-cavity laser emitting around 1.55 um, OPTICS EXPRESS, 2015, 通讯作者
(35) Dynamic characteristics of two-state lasing quantum dot lasers under large signal modulation, AIP ADVANCES, 2015, 通讯作者
(36) Enhanced performance of tunable external-cavity 1.5 mu m InAs/InP quantum dot lasers using facet coating, APPLIED OPTICS, 2015, 通讯作者
(37) High performance 2150 nm-emitting InAs/InGaAs/InP quantum well lasers grown by metalorganic vapor phase epitaxy, OPTICS EXPRESS, 2015, 通讯作者
(38) Nanoscale opening fabrication on Si (111) surface from SiO2 barrier for vertical growth of III-V nanowire arrays, NANOTECHNOLOGY, 2015, 通讯作者
(39) Self-catalyzed growth mechanism of InAs nanowires and growth of InAs/GaSb heterostructured nanowires on Si substrates, JOURNAL OF CRYSTAL GROWTH, 2015, 通讯作者
(40) Two Different Growth Mechanisms for Au-Free InAsSb Nanowires Growth on Si Substrate, CRYSTAL GROWTH & DESIGN, 2015, 通讯作者
(41) Thickness influence of thermal oxide layers on the formation of self-catalyzed InAs nanowires on Si (111) by MOCVD, Journal of Crystal Growth, 2014, 通讯作者
(42) The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy, Journal of Crystal Growth, 2014, 通讯作者
(43) Enhanced performance of quantum dot solar cells based on type II quantum dots, Journal of Applied Physics, 2014, 通讯作者
(44) Three-region characteristic temperature in p-doped quantum dot lasers, Appl. Phys. Lett., 2014, 通讯作者
(45) Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping, Solar Energy Materials & Solar Cells, 2013, 通讯作者
(46) InAs/InGaAsP/InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition, Chinese Physics Letters, 2013, 通讯作者
(47) Impact of double-cap procedure on the characteristics of InAs/InGaAsP/InP quantum dots grown by metal-organic chemical vapor deposition, Journal of Crystal Growth, 2013, 通讯作者

科研活动

   
科研项目
( 1 ) InP基2μm波段分布反馈量子阱激光器制备研究, 主持, 国家级, 2016-01--2019-12
( 2 ) 新型高效量子点中间能带太阳能电池材料及器件研究, 主持, 国家级, 2015-01--2018-12
( 3 ) 低维半导体异质结构材料及激光器研究, 主持, 国家级, 2016-07--2019-12
( 4 ) CMOS工艺兼容的硅基高性能单模量子点激光器, 主持, 国家级, 2021-01--2025-12
( 5 ) Delta掺杂II型InAs/GaAsSb量子点材料及高效中间能带太阳能电池研究, 主持, 国家级, 2021-01--2024-12
参与会议
(1)Significantly enhanced performances of 1.3-m InAs/GaAs quantum dot lasers by direct Si-doping   Tao Yang   2018-10-03
(2)Ultra-broadband Tunable External Cavity Laser with Chirped Multiple InAs/InP Quantum Dot Active Layers   Tao Yang   2018-09-12
(3)Improved performance of 1.3-m direct Si-doped InAs/GaAs quantum dot laser   2018-09-07
(4)InAs(Sb)/GaSb core-shell nanowire arrays grown on Si substrates by metal-organic chemical vapor deposition   Tao Yang   2018-06-03
(5)Ultra-broadband Tunable InAs/InP Quantum Dot External Cavity Laser   2018-05-29
(6)Radial InAs/GaSb heterostructure nanowires on Si substrates grown by metal-organic chemical vapor deposition   2017-11-26
(7)High Performance InP-based Ridge-Waveguide Distributed Feedback Lasers with InGaAs Multi-Quantum Wells emitting at 2004 nm   2017-10-01
(8)Experimental and Theoretical Investigation of Large Signal Modulation in Two-state Lasing Quantum Dot Lasers   2017-08-21
(9)Selective-area Growth of Defect-free InAsSb Nanowires Arrays on Si Substrates by Metal Organic Chemical Vapor Deposition   2017-08-21