基本信息
刘明  女  博导  中国科学院微电子研究所
电子邮件: liuming@ime.ac.cn
通信地址: 北京市朝阳区北土城西路3号
邮政编码: 100029

研究领域

从事微电子科学技术领域,主要涉及存储器模型机理、材料结构、核心共性技术和集成电路的微纳加工等方面

招生信息

   
招生专业
080903-微电子学与固体电子学
080902-电路与系统
085209-集成电路工程
招生方向
新型纳米存储器件与集成技术
集成电路技术

教育背景

1998-06--1999-11   中科院半导体研究所/微电子中心   博士后
1995-09--1998-05   北京航空航天大学   博士
1985-09--1988-06   合肥工业大学   硕士
1981-09--1985-07   合肥工业大学   学士

工作经历

   
工作简历
2000-07~现在, 中国科学院微电子研究所, 研究员
社会兼职
2017-11-26-今,IEEE, Fellow
2016-01-01-今,the EDS Newsletter​, Regional Editor
2016-01-01-今,IEEE EDS Beijing Chapter, 主席
2015-01-01-今,国家重点研发计划纳米科技重点专项专家组成员,
2014-01-01-今,中国真空学会, 理事
2013-01-01-今,中国科学, 编委
2011-01-01-今,IEEE Electron Devices Society, Distinguished Lecturer
2011-01-01-今,Applied Physics A, 编辑
2010-12-01-今,无锡华润微电子有限公司掩模工厂技术顾问,
2008-06-06-今,中科院科学院科学出版社基金,
2008-04-01-今,“纳米科学技术大系”编委会,
2007-01-01-今,中国科学院物理研究所纳米物理与器件实验室学术委员会,
2006-09-01-今,中国仪器仪表学会微纳器件与系统技术分会, 第一届理事会名誉理事长
2002-11-01-今,中国材料研究学会青年委员会,

教授课程

半导体存储器技术

专利与奖励

   
奖励信息
(1) 2017年度何梁何利基金科学与技术进步奖(电子信息技术奖), 一等奖, 其他, 2017
(2) 氧化物阻变存储器机理与性能调控, 二等奖, 国家级, 2016
(3) 阻变存储器机理与性能调控, 一等奖, 省级, 2015
(4) 极大规模集成电路关键技术研究集体, , 院级, 2014
(5) 阻变存储器及集成的基础研究, 二等奖, 省级, 2014
(6) 高精度微纳结构掩模制造核心技术, 二等奖, 国家级, 2013
(7) 中国真空学会“中国真空科技成就奖(莱宝奖)”, , 其他, 2012
(8) 2011年度中国科学院“优秀研究生指导教师”, , 研究所(学校), 2011
(9) 2011年度中国科学院“朱李月华优秀教师”, , 研究所(学校), 2011
(10) 微纳结构‘自上而下’制备核心技术与集成应用, 一等奖, 省级, 2010
(11) 移动通讯用滤波器关键技术及产业化, 二等奖, 国家级, 2009
(12) 中高频声表面波关键材料与器件研究, 二等奖, 国家级, 2007
(13) 中高频声表面波关键材料与器件研究, 一等奖, 省级, 2006
(14) 亚30nm CMOS器件及其关键技术, 二等奖, 国家级, 2005
(15) 27nm CMOS器件, 一等奖, 省级, 2004
(16) 0.18um的集成电路工艺技术, 二等奖, 省级, 2002
(17) 纳米硅薄膜微结构与物性研究, 三等奖, 部委级, 1999
专利成果
[1] 李泠, 段新绿, 卢年端, 耿玓, 刘明. 制备共面型铟镓锌氧薄膜晶体管的方法及薄膜晶体管. CN: [[[CN111696868A]]], [[["2020-09-22"]]].

[2] 罗庆, 吕舒贤, 高兆猛, 王渊, 刘明. 一种铁电器件的制造方法. CN: CN114203905A, 2022-03-18.

[3] 窦春萌, 叶望, 王琳方, 王雪红, 刘璟, 刘琦, 吕杭炳, 刘明. 一种字线译码电路、字线选通方法及存储器和电子设备. CN: CN111627481B, 2022-02-01.

[4] 毕冲, 刘明. 一种MRAM及其制造方法. CN: CN113963734A, 2022-01-21.

[5] 毕冲, 赵倩文, 刘明. 一种基于SOT-MRAM的读写方法、读写电路及SOT-MRAM. CN: CN113948129A, 2022-01-18.

[6] 孙海定, 龙世兵. 一种多量子阱结构、光电器件外延片及光电器件. CN: CN110571311B, 2021-12-14.

[7] 李泠, 刘东阳, 卢年端, 王嘉玮, 耿玓, 刘明. 一种TFT沟道缺陷态密度的提取方法. CN: CN113658881A, 2021-11-16.

[8] 李泠, 刘东阳, 卢年端, 王嘉玮, 耿玓, 刘明. 一种磁随机存储器数据写入方法及写入装置. CN: CN113643737A, 2021-11-12.

[9] 窦春萌, 刘璟, 刘琦, 吕杭炳, 刘明. 实现双方向并行数据读取的非挥发存储阵列. CN: CN111028876B, 2021-11-12.

[10] 李龙杰, 史丽娜, 牛洁斌, 尚潇, 陈生琼, 谢常青, 刘明. 基于结构色的图像显示装置、系统及该装置的制作方法. CN: CN111443482B, 2021-10-29.

[11] 刘琦, 汪泳州, 吴祖恒, 时拓, 刘宇, 张培文, 刘明. 一种三维半导体器件、芯片及三维半导体器件的制备方法. CN: CN113555353A, 2021-10-26.

[12] 许晓欣, 余杰, 董大年, 李晓燕, 郑旭, 吕杭炳, 刘明. 忆阻器、制备方法及全忆阻器基的神经形态计算芯片. CN: CN113517391A, 2021-10-19.

[13] 窦春萌, 王琳方, 王雪红, 叶望, 刘琦, 刘璟, 刘明. 一种动态钳位存内计算电路、存储器以及电子设备. CN: CN113517008A, 2021-10-19.

[14] 耿玓, 黄施捷, 苏悦, 李泠, 卢年端, 刘明. 一种像素电路、显示设备及像素补偿方法. CN: CN113487994A, 2021-10-08.

[15] 耿玓, 季寒赛, 李泠, 卢年端, 刘明. 一种栅极驱动电路、驱动方法及GOA电路. CN: CN113380172A, 2021-09-10.

[16] 耿玓, 陈倩, 李泠, 卢年端, 刘明. 一种栅极驱动装置、驱动方法、栅极驱动设备和显示系统. CN: CN113380198A, 2021-09-10.

[17] 耿玓, 苏悦, 李泠, 卢年端, 刘明. 一种显示阵列的驱动电路及驱动方法. CN: CN111445842B, 2021-08-31.

[18] 邢国忠, 刘龙, 王迪, 林淮, 王艳, 许晓欣, 刘明. 基于磁畴壁驱动型磁隧道结的激活函数发生器及制备方法. CN: CN113193110A, 2021-07-30.

[19] 邢国忠, 林淮, 吴祖恒, 牛洁斌, 姚志宏, 尚大山, 李泠, 刘明. 忆阻器、汉明距离计算方法及存算一体集成应用. CN: CN113129967A, 2021-07-16.

[20] 耿玓, 黄施捷, 苏悦, 季寒赛, 陈倩, 卢年端, 李泠, 刘明. 一种像素电路、像素电路的驱动方法及显示装置. CN: CN113096589A, 2021-07-09.

[21] 刘琦, 吴祖恒, 时拓, 汪泳州, 刘宇, 张培文, 刘明. RRAM的3D垂直堆积集成结构及其集成方法. CN: CN113054101A, 2021-06-29.

[22] 尚潇, 史丽娜, 牛洁斌, 李龙杰, 王冲, 谢常青, 李泠, 刘明. 一种基于硅纳米结构的高分辨率结构色超表面及制备方法. CN: CN113013630A, 2021-06-22.

[23] 李泠, 苏悦, 耿玓, 卢年端, 刘明. 一种发光驱动电路、方法及显示驱动电路. CN: CN112992042A, 2021-06-18.

[24] 吴东阳, 毕冲, 卢年端, 李泠, 刘明. 无外场自旋轨道矩驱动磁翻转磁矩的器件及制备方法. CN: CN112968125A, 2021-06-15.

[25] 尚大山, 李悦, 刘琦, 徐晗, 窦春萌, 刘明, 刘宇. 人工突触单元及其制备方法. CN: CN112968028A, 2021-06-15.

[26] 林雪梅, 李蒙蒙, 卢年端, 李泠, 刘明. 单分子层有机半导体层及有机场效应晶体管的制备方法. CN: CN112951999A, 2021-06-11.

[27] 窦春萌, 王雪红, 钱其昌, 王琳方, 叶望, 刘琦, 刘璟, 刘明. 一种存储单元、三值内容寻址存储器以及电子设备. CN: CN112885392A, 2021-06-01.

[28] 史丽娜, 王冲, 牛洁斌, 尚潇, 李龙杰, 陈生琼, 谢常青, 李泠, 刘明. 结构色功能纳米结构及其制备方法. CN: CN112850638A, 2021-05-28.

[29] 邢国忠, 王迪, 林淮, 刘龙, 刘宇, 吕杭炳, 谢常青, 李泠, 刘明. 磁电阻器件以及改变其阻态的方法、突触学习模块. CN: CN112864314A, 2021-05-28.

[30] 杨建国, 吕杭炳, 刘明. 一种阻变存储器单元电路、阻变存储器及写操作方法. CN: CN112837733A, 2021-05-25.

[31] 许晓欣, 吕杭炳, 张锐, 王侃文, 刘明. 阻变存储器、存算器件、芯片及阻变存储器的制备方法. CN: CN112838161A, 2021-05-25.

[32] 刘琦, 张续猛, 刘明, 吕杭炳, 吴祖恒. 一种传入神经元电路及机械感受系统. CN: CN112819146A, 2021-05-18.

[33] 邢国忠, 林淮, 张锋, 王迪, 刘龙, 谢常青, 李泠, 刘明. 多阻态自旋电子器件、读写电路及存内布尔逻辑运算器. CN: CN112599161A, 2021-04-02.

[34] 刘琦, 吴祖恒, 张续猛, 时拓, 刘宇, 张培文, 刘明. 多功能突触器件及其制作方法. CN: CN112563415A, 2021-03-26.

[35] 范林杰, 毕津顺, 习凯, 刘明. 一种霍尔传感器及其制备和测试方法. CN: CN112540329A, 2021-03-23.

[36] 范林杰, 毕津顺, 习凯, 刘明. 一种磁场探测方法及装置. CN: CN112420917A, 2021-02-26.

[37] 杨建国, 刘超, 吕杭炳, 刘明. 一种非易失静态存储单元、控制方法、元器件及设备. CN: CN112382320A, 2021-02-19.

[38] 邢国忠, 林淮, 刘宇, 张凯平, 张康玮, 吕杭炳, 谢常青, 刘琦, 李泠, 刘明. 一种自参考存储结构和存算一体电路. CN: CN112382319A, 2021-02-19.

[39] 卢年端, 李泠, 姜文峰, 耿玓, 王嘉玮, 刘明. 薄膜晶体管的设计方法. CN: CN112307625A, 2021-02-02.

[40] 李泠, 史学文, 卢年端, 陆丛研, 耿玓, 段新绿, 刘明. 基于氧化锌纳米线的压力传感器及其制备方法. CN: CN112271250A, 2021-01-26.

[41] 卢年端, 李泠, 史学文, 姜文峰, 陆丛研, 耿玓, 刘明. 基于薄膜晶体管的压力传感器及其制备方法. CN: CN112271247A, 2021-01-26.

[42] 卢年端, 李泠, 姜文峰, 史学文, 陆丛研, 耿玓, 刘明. 基于氧化物纳米线的压力传感器结构及其制备方法. CN: CN112271248A, 2021-01-26.

[43] 罗庆, 吕杭炳, 刘明. 可编程二极管的制备方法及铁电存储器. CN: CN112259537A, 2021-01-22.

[44] 罗庆, 丁亚欣, 吕杭炳, 刘明. 一种选通管及其制备方法. CN: CN112216793A, 2021-01-12.

[45] 杨建国, 刘超, 吕杭炳, 刘明. 基于7T1C结构的存储单元及其操作方法、存储器. CN: CN112133347A, 2020-12-25.

[46] 刘琦, 张续猛, 刘明, 吕杭炳, 龙世兵. 一种神经元电路以及神经网络电路. CN: CN109102071B, 2020-12-11.

[47] 罗庆, 陈冰, 吕杭炳, 刘明, 路程. 互补型存储单元及其制备方法、互补型存储器. CN: CN112002364A, 2020-11-27.

[48] 罗庆, 陈冰, 吕杭炳, 刘明, 路程. 对称型存储单元及BNN电路. CN: CN112002362A, 2020-11-27.

[49] 邢国忠, 林淮, 路程, 刘琦, 吕杭炳, 李泠, 刘明. 自旋电子器件、SOT-MRAM存储单元、存储阵列以及存算一体电路. CN: CN112002722A, 2020-11-27.

[50] 邢国忠, 林淮, 刘宇, 张培文, 谢常青, 李泠, 刘明. 无外磁场定向自旋翻转的SOT-MRAM及阵列. CN: CN111986717A, 2020-11-24.

[51] 卢年端, 李泠, 吴全潭, 姜文峰, 王嘉玮, 耿玓, 刘明. 一种模拟人工感知神经元的方法及电路. CN: CN111985633A, 2020-11-24.

[52] 罗庆, 吕杭炳, 余杰, 刘明. 用于选通管疲劳特性测试的装置及方法. CN: CN111965462A, 2020-11-20.

[53] 毕冲, 刘明. 磁场传感器及测试方法. CN: CN111929625A, 2020-11-13.

[54] 卢年端, 李泠, 吴全潭, 王嘉玮, 耿玓, 刘明. 一种对检测到的信号进行处理的方法及电路. CN: CN111933197A, 2020-11-13.

[55] 毕冲, 刘明. 缓存器件及制作方法. CN: CN111863060A, 2020-10-30.

[56] 梁圣法, 张文昌, 项飞斌, 牛洁斌, 姚志宏, 李冬梅, 刘明, 谢常青. 声表面波滤波器及其制备方法. CN: CN111769816A, 2020-10-13.

[57] 罗庆, 丁亚欣, 余杰, 吕杭炳, 刘明. 一种提升选通管器件性能的方法、系统、设备和介质. CN: CN111769133A, 2020-10-13.

[58] 罗庆, 王渊, 吕杭炳, 姜鹏飞, 刘明. 反铁电存储器. CN: CN111769122A, 2020-10-13.

[59] 李泠, 段新绿, 卢年端, 耿玓, 刘明. 铟镓锌氧薄膜晶体管的掺杂方法. CN: CN111710609A, 2020-09-25.

[60] 李泠, 段新绿, 卢年端, 耿玓, 刘明. 共面铟镓锌氧薄膜晶体管及其制备方法. CN: CN111682074A, 2020-09-18.

[61] 呼红阳, 张君宇, 张坤, 霍长兴, 谢元禄, 刘璟, 刘明. 一种带有辅助计算功能的NAND存储器. CN: CN111679788A, 2020-09-18.

[62] 呼红阳, 张君宇, 张坤, 霍长兴, 谢元禄, 刘璟, 刘明. 现场可编程逻辑门阵列的配置系统和方法. CN: CN111680000A, 2020-09-18.

[63] 罗庆, 姜鹏飞, 吕杭炳, 王渊, 刘明. 一种HfO 2 基铁电电容器及其制备方法和HfO 2 基铁电存储器. CN: CN111668372A, 2020-09-15.

[64] 谢元禄, 刘璟, 张君宇, 霍长兴, 呼红阳, 张坤, 刘明. 存储器测试电路、测试系统及测试方法. CN: CN111667877A, 2020-09-15.

[65] 窦春萌, 王琳方, 叶望, 王雪红, 刘璟, 刘琦, 吕杭炳, 刘明. 一种灵敏放大器、存储器读取方法及存储器和电子设备. CN: CN111653300A, 2020-09-11.

[66] 卢年端, 姜文峰, 李泠, 耿玓, 王嘉玮, 李蒙蒙, 刘明. 一种二维材料超晶格器件及制作方法. CN: CN111653613A, 2020-09-11.

[67] 呼红阳, 张君宇, 谢元禄, 刘璟, 张坤, 霍长兴, 刘明. 预取数据的方法及装置. CN: CN111651120A, 2020-09-11.

[68] 谢元禄, 刘璟, 张君宇, 霍长兴, 呼红阳, 张坤, 刘明. 一种双通道数据传输装置及系统. CN: CN111651385A, 2020-09-11.

[69] 霍长兴, 刘璟, 张君宇, 谢元禄, 呼红阳, 张坤, 刘明. 存储器及其读出电路. CN: CN111653303A, 2020-09-11.

[70] 谢元禄, 刘璟, 张君宇, 霍长兴, 呼红阳, 张坤, 刘明. 获取存储器中目标数据的方法、装置和电路. CN: CN111651119A, 2020-09-11.

[71] 霍长兴, 刘璟, 张君宇, 谢元禄, 呼红阳, 张坤, 刘明. 存储器及其限流保护电路. CN: CN111653304A, 2020-09-11.

[72] 谢元禄, 刘璟, 张君宇, 霍长兴, 呼红阳, 张坤, 刘明. 存储器系统、控制方法和控制装置. CN: CN111651118A, 2020-09-11.

[73] 李泠, 黄施捷, 卢年端, 耿玓, 王嘉玮, 李蒙蒙, 刘明. 一种双栅薄膜晶体管及其制作方法. CN: CN111640673A, 2020-09-08.

[74] 卢年端, 姜文峰, 李泠, 耿玓, 王嘉玮, 李蒙蒙, 刘明. 一种形成金属引线的方法及二维材料器件. CN: CN111640662A, 2020-09-08.

[75] 张君宇, 刘璟, 谢元禄, 霍长兴, 张坤, 呼红阳, 刘明. 一种非易失性存储器的读取方法、装置及系统. CN: CN111625200A, 2020-09-04.

[76] 张坤, 刘璟, 张君宇, 谢元禄, 霍长兴, 呼红阳, 刘明. 数据编码、解码方法及数据处理系统. CN: CN111628780A, 2020-09-04.

[77] 刘琦, 张续猛, 曹荣荣, 刘明, 吴祖恒. 一种神经元电路、基于神经网络的集成电路和电子设备. CN: CN111598229A, 2020-08-28.

[78] 张坤, 刘璟, 张君宇, 谢元禄, 霍长兴, 呼红阳, 刘明. 差错控制编码ECC系统及包括ECC系统的存储器设备. CN: CN111597072A, 2020-08-28.

[79] 张君宇, 刘璟, 谢元禄, 霍长兴, 张坤, 呼红阳, 刘明. 一种用于非易失性存储器的操作方法、装置及存储介质. CN: CN111583983A, 2020-08-25.

[80] 林淮, 邢国忠, 刘明. 二维材料基选通器、存储器单元、阵列及其操作方法. CN: CN111554809A, 2020-08-18.

[81] 耿玓, 苏悦, 李泠, 卢年端, 刘明. 可应用于同时发光的像素电路及其驱动方法、显示装置. CN: CN111489696A, 2020-08-04.

[82] 李泠, 苏悦, 耿玓, 卢年端, 刘明. 具有电压补偿功能的像素电路及其驱动方法、显示面板. CN: CN111489697A, 2020-08-04.

[83] 吕杭炳, 杨建国, 许晓欣, 刘明. 存储单元结构及存储器阵列结构、电压偏置方法. CN: CN111446271A, 2020-07-24.

[84] 尚潇, 史丽娜, 牛洁斌, 李龙杰, 谢常青, 刘明. 基于硅纳米柱的结构色成像结构、测试系统及制备方法. CN: CN111426686A, 2020-07-17.

[85] 范林杰, 毕津顺, 徐彦楠, 习凯, 刘明. 非易失霍尔传感器及其制造方法、测试方法. CN: CN111416035A, 2020-07-14.

[86] 陆丛研, 卢年端, 李泠, 刘宇, 王嘉玮, 耿玓, 刘明. 一种多介质检测传感器及其制作方法. CN: CN111415993A, 2020-07-14.

[87] 耿玓, 苏悦, 李泠, 卢年端, 刘明. 像素补偿电路及其控制方法、显示驱动装置、显示设备. CN: CN111383598A, 2020-07-07.

[88] 杨雪琴, 毕津顺, 李博, 习凯, 季兰龙, 刘明. 一种基于RRAM的非易失性锁存器及集成电路. CN: CN210956168U, 2020-07-07.

[89] 谢常青, 王恩亮, 史丽娜, 李海亮, 刘明, 高南. 一种单极涡旋光栅. CN: CN108931829B, 2020-06-30.

[90] 尚大山, 李悦, 刘琦, 刘明, 刘宇. 氧化物基电子突触器件及其阵列. CN: CN111276603A, 2020-06-12.

[91] 史丽娜, 尚潇, 牛洁斌, 李龙杰, 谢常青, 刘明. 纳米结构阵列及其制备方法和含其的色散仪. CN: CN111239077A, 2020-06-05.

[92] 龙世兵, 周选择, 徐光伟, 熊文豪, 赵晓龙, 刘明. 氧化镓基半导体结构及其制备方法. CN: CN111129166A, 2020-05-08.

[93] 龙世兵, 向学强, 丁梦璠, 徐光伟, 赵晓龙, 刘明. 基于氧化镓的异质结半导体结构及其器件. CN: CN111129122A, 2020-05-08.

[94] 龙世兵, 郝伟兵, 徐光伟, 刘琦, 赵晓龙, 刘明. 基于氧化镓的PN结结构及其制备方法. CN: CN111063742A, 2020-04-24.

[95] 卢年端, 段新绿, 刘明, 李泠, 杨冠华, 陆丛研, 史学文, 王嘉玮, 耿玓, 揣喜臣, 姜文峰. 光学晶体管及其制备方法. CN: CN111048622A, 2020-04-21.

[96] 窦春萌, 刘璟, 刘琦, 吕杭炳, 刘明. 基于电阻分压读取的阻变型存储单元. CN: CN110956993A, 2020-04-03.

[97] 张君宇, 刘璟, 吕杭炳",null,"刘明. 一种存储器. CN: CN210136722U, 2020-03-10.

[98] 刘琦, 魏劲松, 吴祖恒, 时拓, 窦春萌, 刘明, 张续猛. 基于1T1R结构的忆阻器及其制备方法、集成结构. CN: CN110867464A, 2020-03-06.

[99] 徐彦楠, 毕津顺, 习凯, 季兰龙, 刘明. 改良的电荷俘获型存储器. CN: CN110783343A, 2020-02-11.

[100] 张君宇, 刘璟, 吕杭炳, 张锋, 刘明. 存储器及电子设备. CN: CN209980790U, 2020-01-21.

[101] 刘琦, 吴祖恒, 时拓, 刘明, 吕杭炳, 张续猛, 王伟. 人工感受神经电路及其制备方法. CN: CN110647982A, 2020-01-03.

[102] 李龙杰, 史丽娜, 牛洁斌, 陈生琼, 谢常青, 刘明. 一种比色传感器及其制作方法及其测试系统. CN: CN110632063A, 2019-12-31.

[103] 刘琦, 吴祖恒, 时拓, 刘明, 吕杭炳, 张续猛. 人工神经突触器件及其制备方法. CN: CN110600610A, 2019-12-20.

[104] 刘宇, 刘明, 胡媛, 张凯平, 张培文, 路程, 赵盛杰, 刘琦, 吕杭炳, 谢常青. 一种金属氧化物场效应晶体管及其制作方法. CN: CN110571261A, 2019-12-13.

[105] 张君宇, 刘璟, 吕杭炳, 张锋, 刘明. 芯片测试方法、装置及电子设备. CN: CN110441667A, 2019-11-12.

[106] 张君宇, 刘璟, 吕杭炳, 张锋, 刘明. 存储器及数据处理方法. CN: CN110444238A, 2019-11-12.

[107] 张君宇, 刘璟, 吕杭炳, 张锋, 刘明. 一种存储器. CN: CN110349617A, 2019-10-18.

[108] 卢年端, 李泠, 耿玓, 王嘉玮, 刘明. 一种薄膜晶体管及制备方法. CN: CN110190131A, 2019-08-30.

[109] 卢年端, 李泠, 耿玓, 刘明. 纳米级晶体管及其制备方法. CN: CN110176489A, 2019-08-27.

[110] 卢年端, 揣喜臣, 杨冠华, 李泠, 耿玓, 刘明. 场效应晶体管制备方法及场效应晶体管. CN: CN110112073A, 2019-08-09.

[111] 卢年端",null,null,null,"耿玓, 刘明. 场效应晶体管及其制备方法. CN: CN110098256A, 2019-08-06.

[112] 卢年端, 揣喜臣, 杨冠华, 李泠, 耿玓, 刘明. 场效应晶体管制备方法及场效应晶体管. CN: CN110061063A, 2019-07-26.

[113] 史丽娜, 陈生琼, 谢常青, 牛洁斌, 刘明. 一种含增益辅助的硅双线系统. CN: CN109917512A, 2019-06-21.

[114] 卢年端, 姜文峰, 李泠, 耿玓, 刘琦, 吕杭炳, 刘明. 阻变存储器的制备方法. CN: CN109920911A, 2019-06-21.

[115] 卢年端, 姜文峰, 李泠, 耿玓, 刘琦, 吕杭炳, 刘明. 阻变存储器. CN: CN109904314A, 2019-06-18.

[116] 吕杭炳, 罗庆, 许晓欣, 龚天成, 刘明. 融合型存储器的写入、擦除方法. CN: CN109887532A, 2019-06-14.

[117] 史丽娜, 陈生琼, 谢常青, 牛洁斌, 刘明. 一种基于单根硅线的增益辅助超共振. CN: CN109870765A, 2019-06-11.

[118] 史丽娜, 李龙杰, 张凯平, 牛洁斌, 谢常青, 刘明. 使用金属诱导自掩模刻蚀工艺制作石英表面抗反层的方法. CN: CN109856706A, 2019-06-07.

[119] 吕杭炳, 罗庆, 许晓欣, 龚天成, 刘明. 融合型存储器. CN: CN109860190A, 2019-06-07.

[120] 吕杭炳, 许晓欣, 罗庆, 刘明. 神经网络运算系统. CN: CN109829540A, 2019-05-31.

[121] 梁圣法, 张文昌, 项飞斌, 姚志宏, 李冬梅, 刘明, 谢常青. 纳米孔结构及其加工设备和方法. CN: CN109795983A, 2019-05-24.

[122] 吕杭炳, 罗庆, 许晓欣, 龚天成, 刘明. 存储器. CN: CN109801977A, 2019-05-24.

[123] 梁圣法, 张文昌, 项飞斌, 姚志宏, 李冬梅, 刘明, 谢常青. 纳米孔结构、控制纳米孔大小的装置及方法. CN: CN109775659A, 2019-05-21.

[124] 卢年端, 李泠, 揣喜臣, 杨冠华, 耿玓, 刘明. 基于二维材料的晶体管及其制备方法. CN: CN109671781A, 2019-04-23.

[125] 卢年端, 马尚, 李泠",null,null,"刘明. 一种阻变存储器. CN: CN109585648A, 2019-04-05.

[126] 卢年端, 马尚, 李泠, 耿玓, 刘琦, 刘明. 一种阻变存储器. CN: CN109585648A, 2019-04-05.

[127] 卢年端, 马尚, 李泠, 耿玓, 刘明. 一种阻变存储器的制备方法. CN: CN109524544A, 2019-03-26.

[128] 刘琦, 刘明, 孙海涛, 吕杭炳, 龙世兵, 瑞塔姆·白纳吉. 非挥发性阻变存储器件及其制备方法. CN: CN105990519B, 2019-02-01.

[129] 耿玓, 苏悦, 李泠, 刘明. 无边框显示结构及无边框显示器. CN: CN109272957A, 2019-01-25.

[130] 李泠, 苏悦, 耿玓, 卢年端, 刘明. 像素扫描的驱动电路及方法. CN: CN109243357A, 2019-01-18.

[131] 刘子维, 浦探超, 史丽娜, 谢常青, 牛洁斌, 王冠亚, 李海亮, 刘明. 一种相位型衍射光栅. CN: CN109212641A, 2019-01-15.

[132] 李梅, 毕津顺, 戴茜茜, 刘明, 李博, 习凯. 一种闪存存储器的抗总剂量辐照加固方法. CN: CN109213620A, 2019-01-15.

[133] 李梅, 毕津顺, 戴茜茜, 刘明, 李博, 习凯. 一种闪存存储电路的抗总剂量辐照加固方法. CN: CN109215715A, 2019-01-15.

[134] 刘子维, 史丽娜, 浦探超, 牛洁斌, 李海亮, 王冠亚, 谢常青, 刘明. 一种纳米柱传感器、折射率检测装置及方法. CN: CN109160483A, 2019-01-08.

[135] 卢年端, 李泠, 耿玓, 刘明. 基于纳米带的晶体管及其制备方法. CN: CN109119485A, 2019-01-01.

[136] 谢元禄, 刘明, 张坤, 呼红阳, 霍长兴, 刘璟, 毕津顺, 王艳, 卢年端. 对FPGA配置数据进行升级的电路. CN: CN208314757U, 2019-01-01.

[137] 戴茜茜, 毕津顺, 李梅, 刘明, 李博, 习凯. 一种闪存存储电路的抗总剂量效应加固方法. CN: CN109119110A, 2019-01-01.

[138] 刘琦, 赵晓龙, 吴祖恒, 刘宇, 张凯平, 路程, 张培文, 赵盛杰, 姚志宏, 余兆安, 吕杭炳, 刘明. 非易失性存储方法及装置. CN: CN108922961A, 2018-11-30.

[139] 龙世兵, 覃愿, 董航, 何启鸣, 刘明. 一种氧化镓基紫外探测器及其制作方法. CN: CN108922931A, 2018-11-30.

[140] 龙世兵, 覃愿, 董航, 何启鸣, 刘明. 一种氧化镓基紫外探测器. CN: CN108878576A, 2018-11-23.

[141] 卢年端, 李泠, 耿玓, 刘明. 一种用于测量二维半导体材料的磁阻的装置及其制作方法. CN: CN108807211A, 2018-11-13.

[142] 耿玓, 苏悦, 李泠, 卢年端, 刘明. 像素补偿电路. CN: CN108806606A, 2018-11-13.

[143] 卢年端, 李泠, 刘明. 一种用于获取表面势的方法及装置. CN: CN108804807A, 2018-11-13.

[144] 卢年端, 李泠, 刘明, 刘琦. 一种阻变存储器的设计方法及装置. CN: CN108807456A, 2018-11-13.

[145] 罗庆, 吕杭炳, 刘明, 许晓欣, 路程. 1S1R存储器集成结构及其制备方法. CN: CN108630810A, 2018-10-09.

[146] 罗庆, 吕杭炳, 刘明. 自整流阻变存储器及其制备方法. CN: CN108493336A, 2018-09-04.

[147] 吕杭炳, 刘明, 刘琦, 龙世兵. 一种Cu基阻变存储器的制备方法及存储器. CN: CN105789438B, 2018-07-31.

[148] 谢元禄, 刘明, 张坤, 呼红阳, 霍长兴, 刘璟, 毕津顺, 王艳, 卢年端. 对FPGA配置数据进行升级的电路及方法. CN: CN108319465A, 2018-07-24.

[149] 刘琦, 王伟, 刘森, 张峰, 吕杭炳, 龙世兵, 刘明. 基于阻变器件交叉阵列结构实现逻辑计算的方法. CN: CN108182959A, 2018-06-19.

[150] 龙世兵, 何启鸣, 董航, 刘琦, 吕杭炳, 刘明. 增强氧化镓半导体器件欧姆接触的方法. CN: CN107993934A, 2018-05-04.

[151] 谢元禄, 刘明, 张坤, 呼红阳, 霍长兴, 刘璟, 毕津顺, 王艳, 卢年端. 现场可编程门阵列多版本配置的芯片及系统. CN: CN207264382U, 2018-04-20.

[152] 刘琦, 张续猛, 刘明, 吕杭柄, 龙世兵, 赵晓龙. 基于易失性阈值转变器件的神经元电路. CN: CN107909146A, 2018-04-13.

[153] 梁圣法, 李冬梅, 刘明, 谢常青. 一种声子晶体声表面波滤波器及制作方法. CN: CN107733393A, 2018-02-23.

[154] 谢元禄, 刘明, 张坤, 呼红阳, 霍长兴, 刘璟, 毕津顺, 王艳, 卢年端. 现场可编程门阵列多版本配置芯片、系统和方法. CN: CN107704285A, 2018-02-16.

[155] 朱效立, 谢常青, 华一磊, 李海亮, 刘明, 施百龄. 脉冲电镀金的方法及形成的金镀层. CN: CN107385486A, 2017-11-24.

[156] 龙世兵, 董航, 何启鸣, 刘明. 一种氧化镓基底场效应晶体管及其制备方法. CN: CN107331607A, 2017-11-07.

[157] 龙世兵, 董航, 何启鸣, 刘明. 一种金刚石材料沟道导电特性优化方法. CN: CN107331701A, 2017-11-07.

[158] 龙世兵, 董航, 何启鸣, 刘明. 一种金刚石材料表面空穴浓度提高方法. CN: CN107331602A, 2017-11-07.

[159] 朱效立, 谢常青, 刘明, 牛洁斌, 华一磊, 施百龄. 反射式单级衍射光栅及其制造方法. CN: CN107315211A, 2017-11-03.

[160] 龙世兵, 张美芸, 许晓欣, 刘琦, 吕杭炳, 刘明. 一种阻变存储器的制造方法和阻变存储器. CN: CN107275482A, 2017-10-20.

[161] 卢年端, 魏巍, 李泠, 刘明. 一种优化氧化物基的阻变存储器性能的方法. CN: CN107221599A, 2017-09-29.

[162] 龙世兵, 张美芸, 许晓欣, 刘琦, 吕杭炳, 刘明. 一种提高RRAM均一性的方法及RRAM器件. CN: CN107221598A, 2017-09-29.

[163] 刘明, 罗庆, 许晓欣, 吕杭炳, 龙世兵, 刘琦. 用于双极性阻变存储器的选择器件及其制备方法. CN: CN107204397A, 2017-09-26.

[164] 龙世兵, 董航, 何启鸣, 刘明. 一种金刚石基底场效应晶体管制备方法. CN: CN107146756A, 2017-09-08.

[165] 龙世兵, 李磊磊, 滕蛟, 刘琦, 吕杭炳, 刘明. 阻变存储器的存储状态的调控方法. CN: CN107134525A, 2017-09-05.

[166] 龙世兵, 李磊磊, 滕蛟, 刘琦, 吕杭炳, 刘明. 磁性纳米线器件、其制作方法与磁性纳米线的构筑方法. CN: CN107123732A, 2017-09-01.

[167] 吕杭炳, 刘明, 龙世兵, 刘琦. 阻变存储器及其制备方法. CN: CN107068860A, 2017-08-18.

[168] 龙世兵, 李磊磊, 滕蛟, 刘琦, 吕杭炳, 刘明. 纳米线的构筑方法及数据存储方法. CN: CN107068857A, 2017-08-18.

[169] 刘子维, 浦探超, 史丽娜, 谢常青, 李海亮, 牛洁斌, 王冠亚, 刘明. 一种极紫外高级抑制衍射光栅. CN: CN107045156A, 2017-08-15.

[170] 龙世兵, 何启鸣, 董航, 刘琦, 吕杭炳, 刘明. 提高氧化镓材料导热性的方法. CN: CN107039245A, 2017-08-11.

[171] 龙世兵, 何启鸣, 董航, 刘琦, 吕杭炳, 刘明. 基于氧化镓的结势垒肖特基二极管及其制备方法. CN: CN107026209A, 2017-08-08.

[172] 张凯平, 胡媛, 刘宇, 陆丛研, 赵盛杰, 张培文, 谢常青, 刘明. 一种图形化敏感金属或金属氧化物材料的加工方法. CN: CN106981420A, 2017-07-25.

[173] 刘子维, 浦探超, 史丽娜, 谢常青, 王冠亚, 李海亮, 牛洁斌, 刘明. 一种用于极紫外的二维单级衍射光栅. CN: CN106959482A, 2017-07-18.

[174] 卢年端, 孙鹏霄, 李泠, 刘明, 刘琦, 吕杭炳, 龙世兵. 改善三维集成阻变存储器耐久性的方法. CN: CN106919729A, 2017-07-04.

[175] 卢年端, 孙鹏霄, 李泠, 刘明, 刘琦, 吕杭炳, 龙世兵. 三维集成阻变存储器的热效应评估及降低热串扰的方法. CN: CN106919723A, 2017-07-04.

[176] 吕杭炳, 罗庆, 许晓欣, 龙世兵, 刘琦, 刘明. 基于过渡金属氧化物的选择器及其制备方法. CN: CN106910759A, 2017-06-30.

[177] 刘琦, 伍法才, 刘明, 龙世兵, 吕杭炳. 一种实现多值存储的阻变存储器的制备方法. CN: CN106887519A, 2017-06-23.

[178] 刘琦, 赵晓龙, 刘森, 刘明, 吕杭炳, 龙世兵, 王艳, 伍法才. 导电桥半导体器件及其制备方法. CN: CN106876400A, 2017-06-20.

[179] 史丽娜, 牛洁斌, 李海亮, 刘子维, 浦探超, 谢常青, 刘明. 一种衍射光栅. CN: CN106772732A, 2017-05-31.

[180] 刘明, 赵盛杰, 牛洁斌, 李海亮, 胡媛, 张凯平, 张培文, 路程, 刘宇. 一种托盘及其加工工艺. CN: CN106754247A, 2017-05-31.

[181] 浦探超, 刘子维, 史丽娜, 谢常青, 李海亮, 牛洁斌, 刘明. 一种极紫外单级衍射光栅. CN: CN106646710A, 2017-05-10.

[182] 史丽娜, 刘子维, 浦探超, 李海亮, 牛洁斌, 谢常青, 刘明. 一种透射光栅. CN: CN106597588A, 2017-04-26.

[183] 谢元禄, 张坤, 孙海涛, 刘璟, 毕津顺, 刘明. 一种对可编程逻辑器件进行配置或更新的装置和方法. CN: CN106445544A, 2017-02-22.

[184] 孙海涛, 刘璟, 吕杭炳, 刘琦, 龙世兵, 刘明. 用于初始化阻变存储器的电路及阻变存储器. CN: CN106297877A, 2017-01-04.

[185] 孙海涛, 刘璟, 吕杭炳, 刘琦, 龙世兵, 刘明. 阻变存储器的阻态读取电路及阻变存储器. CN: CN106251895A, 2016-12-21.

[186] 史丽娜, 李海亮, 刘子维, 浦探超, 牛洁斌, 谢常青, 刘明. 一种透射光栅. CN: CN106094086A, 2016-11-09.

[187] 史丽娜, 刘子维, 浦探超, 李海亮, 牛洁斌, 谢常青, 刘明. 一种单级衍射光栅. CN: CN106094087A, 2016-11-09.

[188] 李海亮, 史丽娜, 牛洁斌, 王冠亚, 谢常青, 刘明. 大高宽比纳米级金属结构的制作方法. CN: CN106094445A, 2016-11-09.

[189] 李海亮, 史丽娜, 牛洁斌, 王冠亚, 谢常青, 刘明. 极紫外多层膜反射式单级衍射光栅. CN: CN106094084A, 2016-11-09.

[190] 陈珊, 毕津顺, 王艳, 刘明. 应用于辐照试验的芯片封装结构及其制作方法. CN: CN106019128A, 2016-10-12.

[191] 刘琦, 刘明, 孙海涛, 张科科, 龙世兵, 吕杭炳, 瑞塔姆·白纳吉. 非挥发性阻变存储器件及其制备方法. CN: CN105990520A, 2016-10-05.

[192] 王明华, 王伟, 樊晓华, 刘明. 多层隧穿结三维隧穿场效应晶体管的制备方法. CN: CN105990409A, 2016-10-05.

[193] 刘琦, 刘明, 孙海涛, 吕杭炳, 龙世兵, 瑞塔姆·白纳吉, 张康玮. 非挥发性阻变存储器件及其制备方法. CN: CN105990519A, 2016-10-05.

[194] 刘明, 罗庆, 许晓欣, 吕杭炳, 龙士兵, 刘琦. 基于两端器件的脉冲参数测试系统. CN: CN105957558A, 2016-09-21.

[195] 刘琦, 赵晓龙, 刘明, 刘森, 龙世兵, 吕杭炳, 卢年端, 王艳, 张康玮. 一种双极型阻变存储器及其制备方法. CN: CN105895800A, 2016-08-24.

[196] 吕杭炳, 刘明, 许晓欣, 罗庆, 刘琦, 龙世兵. 一种自选通阻变存储器件及其制备方法. CN: CN105826468A, 2016-08-03.

[197] 吕杭炳, 刘明, 刘琦, 龙世兵. 一种Cu基阻变存储器的制备方法及存储器. CN: CN105789438A, 2016-07-20.

[198] 徐光伟, 韩志恒, 王伟, 陆丛研, 汪令飞, 李泠, 刘明. 一种获取平面型器件的接触电阻的方法. CN: CN105510717A, 2016-04-20.

[199] 汪令飞, 王伟, 徐光伟, 李泠, 刘明, 卢年端. 石墨烯晶体管的小信号模型的截止频率的计算方法. CN: CN105224717A, 2016-01-06.

[200] 史丽娜, 谢常青, 牛洁斌, 李海亮, 刘明. 基于导波共振的传感器及传感器测试系统. CN: CN105044029A, 2015-11-11.

[201] 牛洁斌, 刘明, 陈宝钦, 谢常青, 龙世兵, 王冠亚, 张建宏, 李海亮, 史丽娜, 朱效立. 电子束光刻对准标记在芯片上的布局. CN: CN104932212A, 2015-09-23.

[202] 刘明, 许中广, 霍宗亮, 张满红, 谢常青, 龙世兵, 李冬梅. 一种半导体存储器件. CN: CN102800358B, 2015-09-09.

[203] 卢年端, 李泠, 刘明, 高南, 徐光伟, 王伟. 赛贝克系数测量结构、测量结构制备方法及测量方法. CN: CN104900557A, 2015-09-09.

[204] 瑞塔姆·白纳吉, 刘明, 刘琦, 吕杭炳, 孙海涛, 张康玮. 非挥发性阻变存储器件及其制备方法. CN: CN104810476A, 2015-07-29.

[205] 卢年端, 李泠, 刘明. 测量半导体材料无序度的方法. CN: CN104792810A, 2015-07-22.

[206] 卢年端, 李泠, 刘明. 测量有机半导体状态密度的方法. CN: CN104777359A, 2015-07-15.

[207] 余兆安, 刘明. 窄脉冲驱动电路. CN: CN104734001A, 2015-06-24.

[208] 周磊, 李冬梅, 梁圣法, 谢常青, 刘明. 声表面波温度传感器. CN: CN104677518A, 2015-06-03.

[209] 王冠亚, 张凯, 谢常青, 李新涛, 李友, 张卫红, 张建宏, 邵鑫, 路程, 牛洁斌, 张培文, 刘明, 龙世兵. 纳米尺度的微细图形加工方法. CN: CN104597724A, 2015-05-06.

[210] 吕杭炳, 刘明, 刘琦, 龙世兵. 一种自选通阻变存储器单元及其制备方法. CN: CN104485418A, 2015-04-01.

[211] 吕杭炳, 刘明, 刘琦, 龙世兵. 三端原子开关器件及其制备方法. CN: CN104465989A, 2015-03-25.

[212] 龙世兵, 王国明, 张美芸, 李阳, 许定林, 王明, 许晓欣, 刘红涛, 吕杭炳, 刘琦, 刘明. 一种有效提高阻变存储器耐久性的方法. CN: CN104464801A, 2015-03-25.

[213] 姬濯宇, 陆丛研, 王龙, 王伟, 刘明, 李冬梅. 一种低阈值电压有机二极管及其制备方法. CN: CN104409634A, 2015-03-11.

[214] 姬濯宇, 陆丛研, 王龙, 王伟, 刘明, 李冬梅. 一种有机-无机异质结二极管及其制备方法. CN: CN104393173A, 2015-03-04.

[215] 孙海涛, 刘琦, 吕杭炳, 龙世兵, 刘明. 一种小间隙平面电极的制作方法. CN: CN104391425A, 2015-03-04.

[216] 孙海涛, 刘琦, 吕杭炳, 龙世兵, 刘明. 一种三维高密度电阻转变存储器的制备方法. CN: CN104393170A, 2015-03-04.

[217] 孙海涛, 刘琦, 吕杭炳, 龙世兵, 刘明. 一种用以获得电阻转变存储器多转变模式的操作方法. CN: CN104392746A, 2015-03-04.

[218] 李冬梅, 周磊, 梁圣法, 谢常青, 刘明. 一种高温声表面波温度传感器. CN: CN104359584A, 2015-02-18.

[219] 卢年端, 李泠, 刘明, 孙鹏霄. 一种提取金属氧化物基阻变存储器载流子输运通道的方法. CN: CN104361908A, 2015-02-18.

[220] 姬濯宇, 陆丛研, 王龙, 王伟, 刘明, 李冬梅. 一种低操作电压有机场效应晶体管及其制备方法. CN: CN104332559A, 2015-02-04.

[221] 余兆安, 姚志宏, 霍宗亮, 龙世兵, 谢常青, 刘明. 针对电容结构和MOS管结构的存储器件的参数测试方法. CN: CN104240767A, 2014-12-24.

[222] 余兆安, 姚志宏, 霍宗亮, 龙世兵, 谢常青, 刘明. 一种对负载或输出进行限流保护的装置. CN: CN104242277A, 2014-12-24.

[223] 姚志宏, 余兆安, 吕杭炳, 霍宗亮, 谢常青, 刘明. 一种对阻变存储器阵列进行测试的系统. CN: CN104217766A, 2014-12-17.

[224] 余兆安, 姚志宏, 霍宗亮, 龙世兵, 谢常青, 刘明. 过压过流保护元件及过压过流保护电路. CN: CN104218552A, 2014-12-17.

[225] 梁圣法, 李冬梅, 刘明, 谢常青, 李小静, 周磊. 一种多路多斜率的非均匀采样电路. CN: CN104202050A, 2014-12-10.

[226] 卢年端, 李泠, 刘明, 孙鹏霄, 王明. 一种分析阻变存储器电流波动性的方法. CN: CN104200845A, 2014-12-10.

[227] 谢常青, 付杰, 朱效立, 李海亮, 刘明. 一种增加石英片表面刻蚀粗糙度的方法. CN: CN104176943A, 2014-12-03.

[228] 王伟, 李泠, 徐光伟, 王龙, 陆丛研, 姬濯宇, 刘明. 一种获取共面型薄膜晶体管接触电阻的方法. CN: CN104156526A, 2014-11-19.

[229] 龙世兵, 王国明, 张美芸, 李阳, 许晓欣, 刘红涛, 吕杭炳, 刘琦, 刘明. 对RRAM存储器耐久性参数进行测试的方法. CN: CN104134468A, 2014-11-05.

[230] 龙世兵, 王国明, 张美芸, 李阳, 许晓欣, 刘红涛, 吕杭炳, 刘琦, 刘明. 一种对RRAM存储器保持时间参数进行测试的方法. CN: CN104134463A, 2014-11-05.

[231] 李婷, 霍宗亮, 靳磊, 刘璟, 曹华敏, 王瑜, 姜丹丹, 杨潇楠, 刘明. 一种应用于三维存储领域的低压带隙基准产生电路. CN: CN104133519A, 2014-11-05.

[232] 霍宗亮, 刘明. 一种抬升共源区的NOR型闪存单元及其制备方法. CN: CN104124248A, 2014-10-29.

[233] 姬濯宇, 郭经纬, 刘明, 王龙, 陆丛研, 王伟, 李泠. 一种聚合物电极的制备方法. CN: CN104103758A, 2014-10-15.

[234] 姬濯宇, 郭经纬, 王龙, 陆丛研, 王伟, 李泠, 刘明. 一种有机电极的制备方法. CN: CN104103757A, 2014-10-15.

[235] 李婷, 霍宗亮, 刘明, 王瑜, 曹华敏, 刘璟. 一种面向三维存储器的零温度系数参考电压产生电路. CN: CN104049671A, 2014-09-17.

[236] 卢年端, 李泠, 刘明, 孙鹏霄. 一种表征有机半导体器件驰豫现象的方法. CN: CN104049196A, 2014-09-17.

[237] 卢年端, 李泠, 刘明, 闫小兵, 吕杭炳, 孙鹏霄. 一种测量阻变存储器状态密度的方法. CN: CN104051022A, 2014-09-17.

[238] 孙海涛, 刘琦, 吕杭炳, 龙世兵, 刘明. 一种制备高存储密度多值纳米晶存储器的方法. CN: CN103972386A, 2014-08-06.

[239] 孙海涛, 刘琦, 吕杭炳, 龙世兵, 刘明. 一种制备表面等离子体激元纳米光子器件的方法. CN: CN103955023A, 2014-07-30.

[240] 龙世兵, 王国明, 张美芸, 李阳, 王明, 许晓欣, 刘红涛, 孙鹏霄, 吕杭炳, 刘琦, 刘明. 一种降低阻变存储器电铸电压的方法. CN: CN103956428A, 2014-07-30.

[241] 李婷, 霍宗亮, 刘明. 三维存储器的参考电流产生电路及其产生参考电流的方法. CN: CN103955252A, 2014-07-30.

[242] 卢年端, 李泠, 刘明, 孙鹏霄, 王明, 刘琦. 一种测量阻变存储器激活能的方法. CN: CN103928057A, 2014-07-16.

[243] 李冬梅, 周磊, 梁圣法, 李小静, 张浩, 谢常青, 刘明. 一种对硅酸镓镧晶片进行清洗的方法. CN: CN103878145A, 2014-06-25.

[244] 曹华敏, 霍宗亮, 刘明. 一种静态随机存取存储器时序控制电路. CN: CN103886895A, 2014-06-25.

[245] 霍宗亮, 刘明. 一种垂直沟道型三维半导体存储器件及其制备方法. CN: CN103872055A, 2014-06-18.

[246] 闫小兵, 刘明, 龙世兵, 刘琦, 吕杭炳, 孙海涛. 基于钇铁石榴石的非挥发电阻转变型存储器及其制备方法. CN: CN103840081A, 2014-06-04.

[247] 毕冲, 龙世兵, 刘明. 一种对磁多畴态进行调控的方法. CN: CN103824588A, 2014-05-28.

[248] 李冬梅, 罗庆, 梁圣法, 李小静, 张浩, 谢常青, 刘明. 一种基于压缩感知的一维信号随机采样方法. CN: CN103795422A, 2014-05-14.

[249] 张凯平, 刘明, 谢常青, 龙世兵, 陆丛研, 胡媛, 刘宇, 赵盛杰. 一种改善用于Al 2 O 3 介质上的光刻工艺的方法. CN: CN103645614A, 2014-03-19.

[250] 张凯平, 刘明, 谢常青, 龙世兵, 胡媛, 刘宇, 赵盛杰, 张培文. 一种改善基于Cr掩模刻蚀工艺的方法. CN: CN103646854A, 2014-03-19.

[251] 梁圣法, 李冬梅, 李小静, 张浩, 罗庆, 周磊, 刘明, 谢常青, 杨洪璋. 一种基于柔性衬底的传感器模块. CN: CN103645215A, 2014-03-19.

[252] 吕杭炳, 刘明, 刘琦, 李颖弢, 龙世兵. 一种具有自整流特性的阻变存储器及其制备方法. CN: CN103633242A, 2014-03-12.

[253] 吕杭炳, 刘明, 刘琦, 李颖弢, 龙世兵. 一种电阻型存储器的制备方法. CN: CN103633243A, 2014-03-12.

[254] 刘宇, 刘明, 谢常青, 龙世兵, 胡媛, 张凯平, 赵盛杰. 一种纳米尺度EUV掩模的制备方法. CN: CN103605260A, 2014-02-26.

[255] 刘明, 李颖弢, 龙世兵, 吕杭炳, 刘琦. 一种存储器器件. CN: CN103579238A, 2014-02-12.

[256] 刘明, 李颖弢, 龙世兵, 刘琦, 吕杭炳, 杨晓一, 孙鹏霄. 具有整流特性的阻变存储器器件及其制作法. CN: CN103579499A, 2014-02-12.

[257] 刘明, 李颖弢, 龙世兵, 刘琦, 吕杭炳. 一种存储器器件. CN: CN103579237A, 2014-02-12.

[258] 谢常青, 洪梅华, 史丽娜, 朱效立, 李海亮, 刘明. 一种基于自支撑光栅结构的传感器及其制备方法. CN: CN103543128A, 2014-01-29.

[259] 龙世兵, 王国明, 张美芸, 李阳, 王明, 许晓欣, 刘若愚, 李丛飞, 刘红涛, 孙鹏霄, 吕杭炳, 刘琦, 刘明. 一种对RRAM器件的脉冲参数进行测试的电路. CN: CN103531250A, 2014-01-22.

[260] 李冬梅, 李小静, 梁圣法, 张浩, 罗庆, 谢常青, 刘明. 一种基于块对角阵观测矩阵构造的信号压缩传感方法. CN: CN103532566A, 2014-01-22.

[261] 龙世兵, 王国明, 张美芸, 李阳, 吕杭炳, 刘琦, 刘明. 一种对RRAM存储器脉冲参数进行测试的方法. CN: CN103531248A, 2014-01-22.

[262] 李冬梅, 李小静, 梁圣法, 张浩, 罗庆, 谢常青, 刘明. 一种随机采样斜率模数转换器. CN: CN103532552A, 2014-01-22.

[263] 龙世兵, 张美芸, 王国明, 李阳, 王明, 许晓欣, 刘若愚, 李丛飞, 刘红涛, 孙鹏霄, 刘琦, 吕杭炳, 刘明. 一种制备纳米器件的方法. CN: CN103500701A, 2014-01-08.

[264] 孙海涛, 杨洪璋, 路程, 刘琦, 吕杭炳, 龙世兵, 谢常青, 刘明. 一种小尺寸银纳米颗粒的制备方法. CN: CN103489754A, 2014-01-01.

[265] 李冬梅, 詹爽, 梁圣法, 陈鑫, 谢常青, 刘明. 一种用于室温检测的NO 2 气体传感器的制作方法. 中国: CN103336027A, 2013.10.02.

[266] 李海亮, 谢常青, 刘明, 李冬梅, 牛洁斌, 史丽娜, 朱效立. 极紫外光刻掩模缺陷检测系统. CN: CN103424985A, 2013-12-04.

[267] 孙海涛, 杨洪璋, 刘琦, 吕杭柄, 牛洁斌, 张培文, 路程, 李友, 龙世兵, 谢常青, 刘明. 超低功耗阻变非挥发性存储器、其制作方法及操作方法. CN: CN103413890A, 2013-11-27.

[268] 孙海涛, 刘明, 龙世兵, 吕杭炳, 刘琦, 刘宇, 张康玮, 路程, 杨洪璋. 一种制作阻变非挥发性存储器阻变层氧化物薄膜的方法. CN: CN103400938A, 2013-11-20.

[269] 李冬梅, 罗庆, 梁圣法, 杨洪璋, 李小静, 张浩, 谢常青, 刘明. 适用于一维缓变信号的随机采样器. CN: CN103391099A, 2013-11-13.

[270] 李海亮, 谢常青, 刘明, 李冬梅, 牛洁斌, 史丽娜, 朱效立, 王子欧. 极紫外光刻掩模缺陷检测系统. CN: CN103365073A, 2013-10-23.

[271] 刘明, 姜丹丹, 霍宗亮, 张满红, 刘璟, 谢常青. 多位半导体存储器的编程方法. CN: CN103366811A, 2013-10-23.

[272] 李冬梅, 李小静, 梁圣法, 张浩, 罗庆, 谢常青, 刘明. 一种以低于奈奎斯特频率的采样频率进行信号采集方法. CN: CN103346798A, 2013-10-09.

[273] 李冬梅, 张浩, 梁圣法, 罗庆, 李小静, 谢常青, 刘明. 基于压缩感知理论的气体识别方法. CN: CN103346799A, 2013-10-09.

[274] 李冬梅, 詹爽, 梁圣法, 陈鑫, 谢常青, 刘明. 一种用于室温检测的NO 2 气体传感器的制作方法. CN: CN103336027A, 2013-10-02.

[275] 李冬梅, 詹爽, 梁圣法, 陈鑫, 谢常青, 刘明. 一种室温检测NH 3 的气体传感器的制作方法. 中国: CN103308560A, 2013-09-18.

[276] 李冬梅, 詹爽, 梁圣法, 陈鑫, 谢常青, 刘明. 一种室温检测NH 3 的气体传感器的制作方法. CN: CN103308560A, 2013-09-18.

[277] 刘明, 赵盛杰, 谢常青, 刘琦, 吕航炳, 张满红, 霍宗亮, 胡媛. 阻变存储器的制造方法. CN: CN103311433A, 2013-09-18.

[278] 王永, 刘明, 霍宗亮, 刘璟, 张满红, 张康玮. 一种凹槽式的硅纳米晶存储器及其制作方法. CN: CN103296029A, 2013-09-11.

[279] 王琴, 杨潇楠, 王永, 张满红, 霍宗亮, 刘明. 一种基于纳米晶的NAND存储器及其制作方法. CN: CN103296070A, 2013-09-11.

[280] 王琴, 杨潇楠, 王永, 张满红, 霍宗亮, 刘明. 2T纳米晶存储器阵列及其操作方法. CN: CN103295633A, 2013-09-11.

[281] 王琴, 杨潇楠, 王永, 张满红, 霍宗亮, 刘明. 纳米晶浮栅存储器阵列的编程方法. CN: CN103295636A, 2013-09-11.

[282] 谢长青, 翁永超, 朱效立, 高南, 刘明. 匀光器及其制作方法. CN: CN103293677A, 2013-09-11.

[283] 梁圣法, 陈鑫, 詹爽, 李小静, 罗庆, 张浩, 李冬梅, 谢常青, 刘明. 基于多级压缩感知的信号采样系统及方法. CN: CN103281087A, 2013-09-04.

[284] 李冬梅, 詹爽, 梁圣法, 陈鑫, 谢常青, 刘明. 一种制备花瓣形掺杂氧化镍的二氧化锡的方法. CN: CN103274452A, 2013-09-04.

[285] 梁圣法, 李冬梅, 刘明, 谢常青, 陈鑫, 詹爽. 基于柔性衬底的气敏传感器及其制备方法. CN: CN103258954A, 2013-08-21.

[286] 霍宗亮, 刘明. 半导体存储器及其制造方法. 中国: CN103258860A, 2013-08-21.

[287] 刘明, 王永, 王琴, 谢常青, 霍宗亮, 张满红. 一种去除硅纳米晶的方法. CN: CN103247527A, 2013-08-14.

[288] 史丽娜, 杜宇禅, 谢常青, 牛洁斌, 李海亮, 李冬梅, 刘明. 基于导波共振的传感器及其制备方法. CN: CN103245635A, 2013-08-14.

[289] 刘明, 李颖弢, 龙世兵, 刘琦, 吕杭炳. 一种降低阻变存储器器件Reset电流的方法. CN: CN103247755A, 2013-08-14.

[290] 刘明, 谢宏伟, 龙世兵, 吕杭炳, 刘琦, 李颖弢, 谢长青. 隧穿二极管整流器件及其制造方法. CN: CN103247696A, 2013-08-14.

[291] 刘明, 许中广, 朱晨昕, 霍宗亮, 谢常青. 一种非易失性存储器及其制备方法. CN: CN103247629A, 2013-08-14.

[292] 刘明, 李颖弢, 龙世兵, 刘琦, 吕杭炳, 王明, 张康玮. 一种存储器器件及其阵列. CN: CN103247335A, 2013-08-14.

[293] 谢常青, 洪梅华, 朱效立, 李冬梅, 刘明. 一种测试透射光栅绝对衍射效率的方法. CN: CN103245487A, 2013-08-14.

[294] 刘明, 王晨杰, 霍宗亮, 张满红, 刘璟, 王永, 谢常青. 双栅电荷俘获存储器及其制作方法. CN: CN103247669A, 2013-08-14.

[295] 刘明, 刘阿鑫, 谢常青, 吕杭炳, 张君宇, 陈映平, 潘立阳. 一种CTS2电荷泵. CN: CN103219882A, 2013-07-24.

[296] 刘明, 许中广, 霍宗亮, 朱晨昕, 谢常青, 张满红. 一种金属纳米晶存储器的制备方法. CN: CN103178017A, 2013-06-26.

[297] 刘明, 许中广, 霍宗亮, 朱晨昕, 谢常青, 张满红. 一种金属纳米晶存储器. CN: CN103178062A, 2013-06-26.

[298] 谢常青, 潘一鸣, 朱效立, 贾佳, 刘明. 一种复合型波带片光子筛. CN: CN102375169B, 2013-06-19.

[299] 李冬梅. 一种打印机. CN: CN103158360A, 2013-06-19.

[300] 李冬梅, 刘明, 谢常青, 霍宗亮, 姬濯宇. 一种喷墨打印机. 中国: CN103158352A, 2013-06-19.

[301] 刘明, 许中广, 霍宗亮, 朱晨昕, 谢常青. 混合存储器件及其控制方法、制备方法. CN: CN103165172A, 2013-06-19.

[302] 李海亮, 谢常青, 刘明, 史丽娜, 朱效立, 李冬梅. 一种制作用于极紫外光刻的铬侧墙衰减型移相掩模的方法. CN: CN103163726A, 2013-06-19.

[303] 刘明, 姜丹丹, 霍宗亮, 张满红, 刘璟, 谢常青. 一种多位非挥发存储单元及阵列的编程方法. CN: CN103165188A, 2013-06-19.

[304] 刘明, 王晨杰, 霍宗亮, 张满红, 刘璟, 谢常青, 王永. 一种闪存存储器及其制作方法. CN: CN103165612A, 2013-06-19.

[305] 刘琦, 刘明, 龙世兵, 吕杭炳, 王艳. 用于双极型阻变存储器交叉阵列集成方式的选通器件单元. CN: CN103137646A, 2013-06-05.

[306] 霍宗亮, 刘明. 非易失性三维半导体存储器件及制备方法. CN: CN103137860A, 2013-06-05.

[307] 刘明, 姜丹丹, 霍宗亮, 张满红, 刘璟, 谢常青. 一种平面浮栅闪存器件及其制备方法. CN: CN103137626A, 2013-06-05.

[308] 霍宗亮, 刘明. 三维层叠存储器及其制造方法. CN: CN103137625A, 2013-06-05.

[309] 史丽娜, 李海亮, 杜宇禅, 牛洁斌, 朱效立, 李冬梅, 谢常青, 刘明. 生物传感器及其制造方法、生物传感器测试系统. CN: CN103105378A, 2013-05-15.

[310] 刘明, 张康玮, 龙世兵, 谢常青, 吕杭炳, 刘琦. 一次编程存储器及其制备方法. CN: CN103106926A, 2013-05-15.

[311] 冀永辉, 冯二媛, 刘明, 于兆安. 快闪存储器限流装置及应用该装置的快闪存储器. CN: CN103093811A, 2013-05-08.

[312] 谢常青, 辛将, 朱效立, 刘明. 一种深度调制金属结构衍射光学元件及其设计方法. CN: CN103091750A, 2013-05-08.

[313] 谢常青, 辛将, 朱效立, 刘明. 一种用于极紫外光刻的衍射光学装置. CN: CN103091991A, 2013-05-08.

[314] 谢常青, 辛将, 朱效立, 刘明. 一种高透过率光子筛. CN: CN103091751A, 2013-05-08.

[315] 谢常青, 辛将, 朱效立, 刘明. 一种高透过率光子筛. CN: CN103091749A, 2013-05-08.

[316] 谢常青, 辛将, 朱效立, 刘明. 一种金属结构衍射光学元件及其设计方法. CN: CN103091839A, 2013-05-08.

[317] 刘明, 王晨杰, 霍宗亮, 张满红, 刘璟, 谢常青. 一种纳米晶存储器及其制作方法. CN: CN103094355A, 2013-05-08.

[318] 李冬梅, 陈鑫, 梁圣法, 詹爽, 张培文, 谢常青, 刘明. 基于置换反应-热氧化方法制备复合半导体敏感膜的方法. CN: CN103074627A, 2013-05-01.

[319] 李冬梅, 陈鑫, 梁圣法, 牛洁斌, 张培文, 刘宇, 李小静, 詹爽, 张浩, 罗庆, 谢常青, 刘明. 一种制备原位掺杂Pt的NiO有序纳米线阵列的方法. CN: CN103072942A, 2013-05-01.

[320] 李冬梅, 詹爽, 梁圣法, 陈鑫, 李小静, 张浩, 罗庆, 谢常青, 刘明. 在常温下检测气体的基于柔性衬底的敏感膜的制备方法. CN: CN103033539A, 2013-04-10.

[321] 李冬梅, 詹爽, 梁圣法, 陈鑫, 李小静, 张浩, 罗庆, 谢常青, 刘明. 在常温下检测气体的基于柔性衬底的敏感膜的制备方法. CN: CN103033538A, 2013-04-10.

[322] 李冬梅, 詹爽, 梁圣法, 陈鑫, 李小静, 张浩, 罗庆, 谢常青, 刘明. 一种基于柔性衬底的气体传感器敏感膜的制备方法. CN: CN103033537A, 2013-04-10.

[323] 史丽娜, 李海亮, 杜宇禅, 朱效立, 李冬梅, 谢常青, 刘明. 表面等离子体共振样品台及其制备方法. CN: CN103018167A, 2013-04-03.

[324] 李海亮, 史丽娜, 朱效立, 李冬梅, 谢常青, 刘明. 光子筛及其制作方法. CN: CN103018808A, 2013-04-03.

[325] 李海亮, 史丽娜, 牛洁斌, 朱效立, 李冬梅, 谢常青, 刘明. 表面等离子体增强对称结构及其制备方法. CN: CN103018800A, 2013-04-03.

[326] 李海亮, 谢常青, 刘明, 李冬梅, 史丽娜, 朱效立. 一种亚波长极紫外金属透射光栅及其制作方法. CN: CN103018806A, 2013-04-03.

[327] 刘明, 陈映平, 冀永辉, 谢常青. 一种对存储器芯片进行擦除的方法. CN: CN103000224A, 2013-03-27.

[328] 刘明, 刘阿鑫, 谢常青, 霍宗亮, 张满红, 张君宇, 陈映平, 潘立阳. 一种消除阈值电压影响的电荷泵. CN: CN103001487A, 2013-03-27.

[329] 刘明, 郑志威, 霍宗亮, 谢常青, 张满红, 刘璟. 电荷俘获型非挥发存储器及其制备方法. CN: CN102983138A, 2013-03-20.

[330] 李冬梅, 陈鑫, 梁圣法, 詹爽, 张培文, 路程, 谢常青, 刘明. 一种表面掺杂Au或Pt纳米晶的敏感膜的制备方法. CN: CN102965622A, 2013-03-13.

[331] 刘明, 姜丹丹, 霍宗亮, 张满红, 刘璟, 谢常青. 一种对多位半导体存储器进行编程的方法. CN: CN102969022A, 2013-03-13.

[332] 李海亮, 史丽娜, 朱效立, 李冬梅, 谢常青, 刘明. 一种基于周期性纳米介质颗粒的生物传感器及其制备方法. CN: CN102954950A, 2013-03-06.

[333] 谢常青, 辛将, 朱效立, 刘明. LED配光透镜曲面构造方法和LED配光透镜. CN: CN102954437A, 2013-03-06.

[334] 刘明, 李颖弢, 龙世兵, 刘琦, 吕杭炳. 一种纳米线忆阻器及其制作方法. CN: CN102931344A, 2013-02-13.

[335] 刘明, 李颖弢, 龙世兵, 吕杭炳, 刘琦. 忆阻器器件及其制备方法. CN: CN102931346A, 2013-02-13.

[336] 刘明, 李颖弢, 龙世兵, 刘琦, 吕杭炳, 王明, 张康玮. 阻变存储器及降低其形成电压的方法. CN: CN102931343A, 2013-02-13.

[337] 刘明, 李颖弢, 龙世兵, 刘琦, 吕杭炳. 一种基于柔性衬底的忆阻器器件及其制作方法. CN: CN102931345A, 2013-02-13.

[338] 刘明, 连文泰, 龙世兵, 吕杭炳, 刘琦, 谢常青. 阻变存储单元的编程方法. CN: CN102915762A, 2013-02-06.

[339] 刘明, 张君宇, 张满红, 霍宗亮, 谢常青, 潘立阳, 陈映平, 刘阿鑫. 一种用于大规模快闪存储器的灵敏放大器. CN: CN102890955A, 2013-01-23.

[340] 刘明, 张君宇, 张满红, 霍宗亮, 谢常青, 潘立阳, 陈映平, 刘阿鑫. 一种CMOS带隙基准电压源. CN: CN102890526A, 2013-01-23.

[341] 李冬梅, 汪幸, 刘明, 周文, 侯成诚, 闫学锋, 谢常青. 一种采用滴涂法制作氧化锌掺杂酞菁靶敏感膜的方法. CN: CN102879466A, 2013-01-16.

[342] 李冬梅, 侯成诚, 闫学锋, 周文, 汪幸, 刘明, 谢常青. 一种用于检测多种气体的复合传感器. CN: CN102879439A, 2013-01-16.

[343] 李冬梅, 周文, 刘明, 谢常青, 侯成诚, 汪幸, 闫学锋. 一种Al 2 O 3 与聚苯胺复合敏感膜的制作方法. CN: CN102879465A, 2013-01-16.

[344] 李冬梅, 汪幸, 刘明, 周文, 侯成诚, 闫学锋, 谢常青. 四乙醇乙二胺掺杂研磨的多壁碳纳米管敏感膜的制作方法. CN: CN102882485A, 2013-01-16.

[345] 李冬梅, 周文, 刘明, 谢常青, 侯成诚, 汪幸, 闫学锋. 一种Al 2 O 3 与聚苯胺复合敏感膜的制作方法. 中国: CN102879465A, 2013-01-16.

[346] 李冬梅, 周文, 刘明, 谢常青, 侯成诚, 汪幸, 闫学锋. 一种聚噻吩与氧化锆复合敏感膜的制作方法. CN: CN102879464A, 2013-01-16.

[347] 刘明, 连文泰, 龙世兵, 刘琦, 吕杭炳, 谢常青. 电阻转变存储器阵列及对其进行存储操作的方法. CN: CN102855928A, 2013-01-02.

[348] 李冬梅, 陈鑫, 梁圣法, 詹爽, 谢常青, 刘明. 一种制备用于传感器的敏感材料的方法. CN: CN102818880A, 2012-12-12.

[349] 李冬梅, 陈鑫, 梁圣法, 詹爽, 谢常青, 刘明. 应用于气体传感器的原位还原法掺杂的敏感膜的制备方法. CN: CN102816995A, 2012-12-12.

[350] 李冬梅, 汪幸, 刘明, 周文, 侯成诚, 闫学锋, 谢常青. 一种制作声表面波传感器二氧化钛掺杂酞菁铜敏感膜的方法. CN: CN102820867A, 2012-12-12.

[351] 李冬梅, 汪幸, 刘明, 周文, 侯成诚, 闫学锋, 谢常青. 一种制作声表面波传感器双层敏感膜的方法. CN: CN102818839A, 2012-12-12.

[352] 李冬梅, 汪幸, 刘明, 周文, 侯成诚, 闫学锋, 谢常青. 一种制作声表面波传感器二氧化锡掺杂酞菁锌敏感膜的方法. CN: CN102818840A, 2012-12-12.

[353] 刘明, 姜丹丹, 霍宗亮, 张满红, 王琴, 刘璟, 谢常青. 分裂栅存储器及其制造方法. CN: CN102810560A, 2012-12-05.

[354] 李冬梅, 詹爽, 刘明, 谢常青, 梁圣法, 陈鑫. 基于柔性衬底的传感器膜材料的制备方法. CN: CN102798648A, 2012-11-28.

[355] 刘明, 王晨杰, 霍宗亮, 张满红, 王琴, 刘璟, 谢常青. 一种电荷俘获非挥发存储器的制造方法. CN: CN102800632A, 2012-11-28.

[356] 刘明. 一种半导体存储器件. CN: CN102800358A, 2012-11-28.

[357] 刘明, 王晨杰, 霍宗亮, 张满红, 王琴, 刘璟, 谢常青. 一种电荷俘获非挥发存储器及其制造方法. CN: CN102800675A, 2012-11-28.

[358] 刘明. 一种半导体存储器件. CN: CN102800359A, 2012-11-28.

[359] 李海亮, 史丽娜, 朱效立, 李冬梅, 谢常青, 刘明. 一种基于周期性纳米结构的生物传感器及其制备方法. CN: CN102798615A, 2012-11-28.

[360] 刘明, 刘欣, 姬濯宇, 商立伟, 谢常青, 李冬梅, 韩买兴, 陈映平, 王宏. 电容器件及其制造方法. CN: CN102790174A, 2012-11-21.

[361] 刘琦, 刘明, 龙世兵, 吕杭炳, 李颖涛, 王艳, 谢常青. 一种用于原位电学测试的透射电镜样品的制备方法. CN: CN102788723A, 2012-11-21.

[362] 刘明, 刘欣, 姬濯宇, 商立伟, 谢常青, 李冬梅, 韩买兴, 陈映平, 王宏. 有机存储器件、阵列及其制造方法. CN: CN102790173A, 2012-11-21.

[363] 刘宇, 刘明, 龙世兵, 谢常青, 胡媛. 一种改善真空获得和保持的装置及方法. CN: CN102784592A, 2012-11-21.

[364] 刘宇, 刘明, 龙世兵, 谢常青, 胡媛. 一种用于改善薄膜制备工艺的匀气装置. CN: CN102787302A, 2012-11-21.

[365] 刘宇, 刘明, 龙世兵, 谢常青, 胡媛. 一种用于改善刻蚀工艺的匀气装置. CN: CN102789962A, 2012-11-21.

[366] 刘明, 许中广, 霍宗亮, 谢常青, 龙世兵, 张满红, 李冬梅, 王琴, 刘璟, 朱晨昕. 多功能存储单元、阵列及其制造方法. CN: CN102779550A, 2012-11-14.

[367] 李冬梅, 侯成诚, 闫学峰, 周文, 汪幸, 刘明, 谢常青, 叶甜春. 一种声表面波气体传感器及其制造方法. CN: CN102778503A, 2012-11-14.

[368] 李冬梅, 刘明, 谢常青, 闫学峰, 叶甜春. 一种敏感吸附膜及其制造方法. CN: CN102774064A, 2012-11-14.

[369] 刘明, 连文泰, 龙世兵, 刘琦, 李颖弢, 张森, 王艳. 非挥发性半导体存储器及其存储操作方法. CN: CN102760492A, 2012-10-31.

[370] 刘琦, 刘明, 龙世兵, 吕杭炳, 谢常青. 阻变存储器单元. CN: CN102750979A, 2012-10-24.

[371] 李冬梅, 陈鑫, 梁圣法, 詹爽, 谢常青, 刘明. 一种声表面波气体传感器多层敏感膜的制备方法. CN: CN102735753A, 2012-10-17.

[372] 李海亮, 史丽娜, 朱效立, 李冬梅, 谢常青, 刘明. 一种偶次级透射光栅. CN: CN102736152A, 2012-10-17.

[373] 刘明, 李颖弢, 龙世兵, 刘琦, 吕杭炳. 具有忆阻器特性的半导体器件及其实现多级存储的方法. CN: CN102738388A, 2012-10-17.

[374] 刘明, 李颖弢, 龙世兵, 刘琦, 张森, 王艳, 连文泰. 一种基于TiOx结构的忆阻器及其制备方法. CN: CN102738387A, 2012-10-17.

[375] 刘明, 李颖弢, 龙世兵, 吕杭炳, 刘琦, 张森, 王艳. 一种具有忆阻器特性的半导体器件及其制备方法. CN: CN102738389A, 2012-10-17.

[376] 谢常青, 方磊, 朱效立, 李冬梅, 刘明. 一种对纳米尺度元件进行套刻的方法. CN: CN102736432A, 2012-10-17.

[377] 刘琦, 刘明, 龙世兵, 吕杭炳, 张森, 李颖涛, 王艳, 连文泰, 谢常青. 阻变存储器及其制造方法. CN: CN102738386A, 2012-10-17.

[378] 刘明, 刘明, 龙世兵, 谢常青, 刘琦, 吕杭炳. 阻变存储器及其制造方法. CN: CN102738386A, 2012-10-17.

[379] 刘明, 王宏, 姬濯宇, 商立伟, 陈映平, 王艳花, 韩买兴, 刘欣. 铁电型存储单元、存储器及其制备方法. CN: CN102723436A, 2012-10-10.

[380] 刘明, 王宏, 姬濯宇, 商立伟, 陈映平, 王艳花, 韩买兴, 刘欣. 基于有机场效应晶体管的存储单元、存储器及其制备方法. CN: CN102723439A, 2012-10-10.

[381] 刘明, 王宏, 姬濯宇, 商立伟, 陈映平, 王艳花, 韩买兴, 刘欣. 有机阻变型存储单元、存储器及其制备方法. CN: CN102723438A, 2012-10-10.

[382] 刘明, 王宏, 姬濯宇, 商立伟, 陈映平, 王艳花, 韩买兴, 刘欣. 光存储单元、光存储器及其制备方法. CN: CN102723437A, 2012-10-10.

[383] 刘明, 张康玮, 龙世兵. 阻变存储器及其制造方法. CN: CN102694118A, 2012-09-26.

[384] 刘明, 许中广, 霍宗亮, 谢常青, 龙世兵, 李冬梅, 朱晨昕. 一种多值非挥发存储器及其制备方法. CN: CN102693984A, 2012-09-26.

[385] 贾佳, 谢长青, 刘明. 一种制作阵列部分环带光子筛匀光器的方法. CN: CN102681170A, 2012-09-19.

[386] 吕杭炳, 刘明, 龙世兵, 刘琦, 王艳花, 牛洁斌. 集成标准CMOS工艺的电阻存储器及其制备方法. CN: CN102683585A, 2012-09-19.

[387] 刘明, 连文泰, 龙世兵, 吕杭炳, 刘琦, 李颖弢, 张森, 王艳. 提高非挥发性电阻存储器可靠性的方法及结构. CN: CN102682840A, 2012-09-19.

[388] 吕杭炳, 刘明, 龙世兵, 刘琦, 王艳花, 牛洁斌. 集成标准CMOS工艺的金属氧化物电阻存储器及其制备方法. CN: CN102683584A, 2012-09-19.

[389] 谢常青, 辛将, 朱效立, 刘明. 一种光子筛结构. CN: CN102681059A, 2012-09-19.

[390] 谢常青, 辛将, 朱效立, 刘明. 一种复合型波带片光子筛. CN: CN102681060A, 2012-09-19.

[391] 谢常青, 辛将, 朱效立, 刘明. 一种消除色差的波带片结构. CN: CN102681062A, 2012-09-19.

[392] 谢常青, 辛将, 朱效立, 刘明. 一种带调焦系统的衍射光学元件. CN: CN102681061A, 2012-09-19.

[393] 刘明, 王宏, 姬濯宇, 商立伟, 陈映平, 王艳花, 韩买兴, 刘欣. 有机场效应晶体管存储器的编程方法. CN: CN102682838A, 2012-09-19.

[394] 谢常青, 辛将, 朱效立, 刘明. 呈矩形光斑均匀分布的LED二次配光透镜的实现方法. CN: CN102679266A, 2012-09-19.

[395] 谢常青, 辛将, 朱效立, 刘明. 一种利用自由曲面透镜实现光束匀光控制的方法. CN: CN102679265A, 2012-09-19.

[396] 李冬梅, 汪幸, 刘明, 周文, 侯成诚, 闫学锋, 谢常青, 霍宗亮, 张满红. 一种制作声表面波传感器敏感膜的方法. CN: CN102680572A, 2012-09-19.

[397] 李海亮, 谢常青, 朱效立, 史丽娜, 刘明. 基于纳米岛衬底制备大高宽比X射线衍射光学元件的方法. CN: CN102683167A, 2012-09-19.

[398] 李海亮, 谢常青, 牛洁斌, 朱效立, 史丽娜, 刘明. 一种基于湿法腐蚀制备位相型衍射光学元件的方法. CN: CN102681335A, 2012-09-19.

[399] 商立伟, 姬濯宇, 刘明. 一种有机场效应晶体管结构及其制备方法. CN: CN102683588A, 2012-09-19.

[400] 商立伟, 姬濯宇, 刘明. 一种制备有机场效应晶体管结构的方法. CN: CN102683592A, 2012-09-19.

[401] 商立伟, 姬濯宇, 刘明. 一种制备有机场效应晶体管结构的方法. CN: CN102683591A, 2012-09-19.

[402] 李冬梅, 刘明, 谢常青, 周文. 半导体薄膜、气体传感器及其制作方法. CN: CN102662002A, 2012-09-12.

[403] 李冬梅, 刘明, 谢常青, 霍宗亮, 张满红, 龙世兵. 一种表面波NO 2 气体传感器敏感薄膜的制备方法. CN: CN102655401A, 2012-09-05.

[404] 霍宗亮, 朱晨昕, 刘明, 李冬梅, 张满红, 王琴, 刘璟. 电荷俘获型栅堆栈及存储单元. CN: CN102655167A, 2012-09-05.

[405] 李冬梅, 汪幸, 刘明, 周文, 侯成诚, 闫学锋, 谢常青, 叶甜春, 霍宗亮, 张满红. 一种制作声表面波气体传感器双层敏感膜的方法. CN: CN102655397A, 2012-09-05.

[406] 李冬梅, 周文, 刘明, 侯成诚, 汪幸, 闫学锋, 谢常青, 霍宗亮, 张满红, 龙世兵. 一种石墨烯掺杂氧化锌的纳米薄膜的制作方法. CN: CN102654474A, 2012-09-05.

[407] 商立伟, 姬濯宇, 刘明. 一种有机场效应晶体管结构及其制备方法. 中国: CN102655216A, 2012-09-05.

[408] 商立伟, 姬濯宇, 刘明. 一种有机场效应晶体管结构及其制备方法. CN: CN102655216A, 2012-09-05.

[409] 商立伟, 姬濯宇, 刘明. 有机场效应晶体管结构及其制备方法. CN: CN102655215A, 2012-09-05.

[410] 李冬梅, 刘明, 谢常青, 霍宗亮, 张满红, 龙世兵. 一种表面波NO 2 气体传感器敏感薄膜的制备方法. 中国: CN102655401A, 2012-09-05.

[411] 李冬梅, 汪幸, 刘明, 周文, 侯成诚, 闫学锋, 谢常青, 叶甜春, 霍宗亮, 龙世兵. 一种制作声表面波传感器敏感膜的方法. CN: CN102654480A, 2012-09-05.

[412] 刘明, 许中广, 霍宗亮, 谢常青, 龙世兵, 张满红, 李冬梅, 王琴, 刘璟. 复合存储单元和存储器. CN: CN102651233A, 2012-08-29.

[413] 刘琦, 刘明, 龙世兵, 吕杭炳. 阻变型随机存储单元及存储器. CN: CN102623045A, 2012-08-01.

[414] 刘琦, 刘明, 龙世兵, 吕杭炳, 张森, 李颖涛, 王艳, 连文泰. 阻变型随机存储单元、存储器及制备方法. CN: CN102623631A, 2012-08-01.

[415] 冀永辉, 丁川, 王凤虎, 刘明. 一种半导体存储器件的复位方法. CN: CN102623059A, 2012-08-01.

[416] 谢常青, 方磊, 朱效立, 李冬梅, 刘明. 一种制作纳米尺度大高宽比器件的方法. CN: CN102608864A, 2012-07-25.

[417] 霍宗亮, 刘明, 刘璟, 王艳花, 龙世兵. 非挥发性存储单元及存储器. CN: CN102610748A, 2012-07-25.

[418] 霍宗亮, 刘明, 张满红, 王艳花. 阻变型随机存储单元及存储器. CN: CN102610749A, 2012-07-25.

[419] 冀永辉, 王凤虎, 丁川, 余兆安, 王琴, 龙世兵, 刘明. 一种基于差分技术的消除成像器件阈值偏差影响的方法. CN: CN102611852A, 2012-07-25.

[420] 冀永辉, 丁川, 王凤虎, 余兆安, 王琴, 龙世兵, 刘明. 一种光学传感器及其内部的成像器件. CN: CN102610620A, 2012-07-25.

[421] 刘明, 金林, 霍宗亮, 刘璟, 张满红, 王琴. 纳米晶浮栅存储器及其制备方法. CN: CN102610653A, 2012-07-25.

[422] 霍宗亮, 姜丹丹, 刘明, 张满红, 王琴, 刘璟, 李冬梅. 一种非挥发性存储器件的编程方法. CN: CN102610277A, 2012-07-25.

[423] 刘明, 连文泰, 龙世兵, 吕杭炳, 刘琦. 提高非易失性电阻转变存储器均一性的方法. CN: CN102610747A, 2012-07-25.

[424] 刘明, 连文泰, 龙世兵, 吕杭炳, 刘琦. 非挥发性电阻转变存储器. CN: CN102610746A, 2012-07-25.

[425] 谢常青, 辛将, 朱效立, 潘一鸣, 刘明. 大高宽比光子筛及其制备方法. CN: CN102608687A, 2012-07-25.

[426] 谢常青, 辛将, 朱效立, 高南, 刘明. 制备大高宽比结构器件的方法. CN: CN102608862A, 2012-07-25.

[427] 刘明, 王明, 吕杭炳, 刘琦, 龙世兵. 一种阻变存储器单元的编程或擦除方法及装置. CN: CN102610272A, 2012-07-25.

[428] 谢常青, 方磊, 朱效立, 李冬梅, 刘明. 一种制作大高宽比X射线衍射光栅的方法. CN: CN102590915A, 2012-07-18.

[429] 刘明, 连文泰, 龙世兵, 刘琦, 李颖弢, 张森, 王艳. 编程电阻存储单元的方法和装置. CN: CN102592667A, 2012-07-18.

[430] 刘琦, 刘明, 龙世兵, 吕杭炳, 谢常青. 一种Si x N y 基电阻型存储器及其制备方法和应用. 中国: CN102593349A, 2012-07-18.

[431] 刘琦, 刘明, 龙世兵, 吕杭炳, 谢常青. 一种Si x N y 基电阻型存储器及其制备方法和应用. CN: CN102593349A, 2012-07-18.

[432] 霍宗亮, 刘明. 阻变随机存储装置及系统. CN: CN102569334A, 2012-07-11.

[433] 刘明, 朱晨昕, 霍宗亮, 闫峰, 王艳花, 王琴, 龙世兵. 一种三维多值非挥发存储器的制备方法. CN: CN102569203A, 2012-07-11.

[434] 叶甜春, 闫学锋, 李冬梅, 刘明, 侯成诚, 周文, 汪幸, 谢常青, 霍宗亮, 张满红, 龙世兵. 一种用于声表面波传感器的半导体薄膜的成膜方法. CN: CN102558583A, 2012-07-11.

[435] 刘明, 陆丛研, 姬濯宇, 商立伟, 王宏, 刘欣, 韩买兴, 陈映平. 一种有机薄膜晶体管及其制备方法. 中国: CN102544368A, 2012-07-04.

[436] 刘琦, 刘明, 龙世兵, 吕杭炳, 王艳花, 王艳, 张森, 李颖涛. 忆阻器及其制作方法. CN: CN102544359A, 2012-07-04.

[437] 霍宗亮, 刘明. 制备三维半导体存储器件的方法. CN: CN102543877A, 2012-07-04.

[438] 刘明, 张康玮, 龙世兵, 刘琦, 吕杭炳, 王艳花. 一种双极晶体管选通的阻变存储器、阵列及其制造方法. CN: CN102544076A, 2012-07-04.

[439] 霍宗亮, 刘明. 三维半导体存储器件及其制备方法. CN: CN102544049A, 2012-07-04.

[440] 刘明, 王艳, 龙世兵, 吕杭炳, 刘琦, 李颖涛, 张森, 连文泰. 一种电阻转变型存储器的制造方法. CN: CN102544357A, 2012-07-04.

[441] 谢常青, 方磊, 朱效立, 李冬梅, 刘明. 制备X射线衍射光学元件的方法. CN: CN102508411A, 2012-06-20.

[442] 李冬梅, 周文, 刘明, 谢常青, 侯成诚, 汪幸, 闫学锋. 声表面波气体传感器及其制作方法. CN: CN102507733A, 2012-06-20.

[443] 谢常青, 方磊, 朱效立, 李冬梅, 刘明. 一种四台阶光栅及其制备方法. CN: CN102495444A, 2012-06-13.

[444] 龙世兵, 刘明, 刘琦, 吕杭炳, 李颖弢, 张森, 王艳, 连文泰, 张康玮, 王明, 张满红, 霍宗亮, 王琴, 刘璟, 余兆安, 李冬梅. 非挥发性电阻转变存储器及其制备方法. CN: CN102487122A, 2012-06-06.

[445] 龙世兵, 刘明, 刘琦, 吕杭炳, 陈宝钦, 牛洁斌, 王艳花, 张康玮. 一种纳米尺度非挥发性阻变存储器单元及其制备方法. CN: CN102487123A, 2012-06-06.

[446] 龙世兵, 刘明, 谢常青, 陈宝钦, 徐连生, 胡媛. 多功能离子束溅射与刻蚀及原位物性分析系统. CN: CN102486465A, 2012-06-06.

[447] 霍宗亮, 刘明, 刘璟. 具有高变比能力的电阻转变存储器结构及其制备方法. CN: CN102479925A, 2012-05-30.

[448] 霍宗亮, 刘明, 刘璟, 张满红. 一种垂直型NROM存储结构及其制备方法. CN: CN102479823A, 2012-05-30.

[449] 刘明, 张森, 刘琦, 龙世兵. 一种对电阻存储器进行编程的电路. CN: CN102479546A, 2012-05-30.

[450] 刘明, 韩买兴, 姬濯宇, 商立伟, 刘欣, 王宏. 场效应晶体管及其制备方法. 中国: CN102479820A, 2012-05-30.

[451] 谢常青, 潘一鸣, 朱效立, 刘明. 无掩膜光刻装置. CN: CN102478767A, 2012-05-30.

[452] 霍宗亮, 刘明, 金林, 刘璟, 张满红, 李冬梅. 一种半导体存储单元、器件及其制备方法. CN: CN102468342A, 2012-05-23.

[453] 霍宗亮, 刘明. 半导体存储单元、器件及其制备方法. CN: CN102468303A, 2012-05-23.

[454] 谢常青, 李海亮, 史丽娜, 朱效立, 刘明. 一种大高宽比衍射光学元件的制作方法. CN: CN102466967A, 2012-05-23.

[455] 谢常青, 辛将, 朱效立, 高南, 刘明. 一种制作大高宽比光子筛的方法. CN: CN102466832A, 2012-05-23.

[456] 谢常青, 李海亮, 朱效立, 刘明. 基于电子束光刻和X射线曝光制作多层膜闪耀光栅的方法. CN: CN102466980A, 2012-05-23.

[457] 霍宗亮, 刘明, 张满红. 非挥发性半导体存储单元、器件及制备方法. CN: CN102456746A, 2012-05-16.

[458] 谢常青, 方磊, 朱效立, 李冬梅, 刘明. 制备X射线衍射光学元件的方法. CN: CN102402118A, 2012-04-04.

[459] 霍宗亮, 刘明. 一种无电容型动态随机访问存储器结构及其制备方法. CN: CN102376715A, 2012-03-14.

[460] 李冬梅, 刘明, 谢常青, 叶甜春, 阎学锋, 霍宗亮, 龙世兵, 张满红. 一种换能器薄膜的制作方法. CN: CN102378100A, 2012-03-14.

[461] 李冬梅, 侯成诚, 刘明, 周文, 汪幸, 闫学锋, 谢常青, 霍宗亮. 一种制作复合半导体薄膜材料的方法. CN: CN102373470A, 2012-03-14.

[462] 叶甜春, 闫学锋, 李冬梅, 刘明, 侯成诚, 周文, 汪幸. 一种制作高选择性半导体薄膜方法. CN: CN102375028A, 2012-03-14.

[463] 李冬梅, 周文, 刘明, 侯成诚, 汪幸, 闫学锋, 谢常青, 霍宗亮. 一种制作高选择性半导体薄膜材料的方法. CN: CN102375029A, 2012-03-14.

[464] 李冬梅, 汪幸, 刘明, 周文, 侯成诚, 闫学锋, 谢常青, 霍宗亮. 一种制作半导体薄膜材料的方法. CN: CN102375030A, 2012-03-14.

[465] 李冬梅, 汪幸, 刘明, 周文, 侯成诚, 闫学锋, 谢常青, 霍宗亮. 一种制作半导体薄膜的方法. CN: CN102376889A, 2012-03-14.

[466] 李冬梅, 刘明, 谢常青, 叶甜春, 阎学锋, 霍宗亮, 龙世兵, 张满红. 一种高选择性半导体薄膜的制作方法. CN: CN102376890A, 2012-03-14.

[467] 刘明, 朱晨昕, 霍宗亮, 王琴, 龙世兵. 一种三维多值非挥发存储器结构. CN: CN102347332A, 2012-02-08.

[468] 霍宗亮, 刘明. 具有高速低压操作的高可靠分裂栅非挥发性存储器结构. CN: CN102339833A, 2012-02-01.

[469] 谢常青, 方磊, 朱效立, 李冬梅, 刘明. 一种阶梯型位相光栅的制作方法. CN: CN102331594A, 2012-01-25.

[470] 谢常青, 潘一鸣, 朱效立, 刘明. 一种光子筛. CN: CN102313918A, 2012-01-11.

[471] 霍宗亮, 刘明, 姜丹丹, 龙世兵, 王琴. 高性能平面浮栅闪存器件结构及其制作方法. CN: CN102315223A, 2012-01-11.

[472] 谢常青, 潘一鸣, 朱效立, 刘明. 采用HSQ工艺制作位相型二元衍射光学元件的方法. CN: CN102313917A, 2012-01-11.

[473] 刘明, 朱晨昕, 霍宗亮, 闫锋, 王琴, 龙世兵. 三维多值非挥发存储器的制备方法. CN: CN102315173A, 2012-01-11.

[474] 刘明, 朱晨昕, 霍宗亮, 闫锋, 王琴, 龙世兵. 三维高速高密度非挥发存储器. CN: CN102315222A, 2012-01-11.

[475] 谢常青, 方磊, 朱效立, 李冬梅, 刘明. 一种制作大高宽比X射线衍射光栅的方法. CN: CN102289015A, 2011-12-21.

[476] 谢常青, 辛将, 朱效立, 刘明. LED配光透镜曲面构造方法和LED配光透镜. CN: CN102287756A, 2011-12-21.

[477] 谢常青, 高南, 华一磊, 朱效立, 李海亮, 史丽娜, 李冬梅, 刘明. 复合光子筛投影式光刻系统. CN: CN102289157A, 2011-12-21.

[478] 霍宗亮, 钟浩, 王琴, 龙世兵, 刘明. 一种混合型非易失存储单元及其制作方法. CN: CN102263137A, 2011-11-30.

[479] 商立伟, 刘明, 姬濯雨. 一种有机场效应晶体管及其制备方法. 中国: CN102263201A, 2011-11-30.

[480] 商立伟, 刘明, 姬濯雨. 一种有机场效应晶体管及其制备方法. CN: CN102263200A, 2011-11-30.

[481] 刘明, 张森, 刘琦, 龙世兵. 电阻转变型存储器及其驱动装置和方法. CN: CN101441890B, 2011-11-30.

[482] 李冬梅, 侯成诚, 闫学峰, 刘明, 谢常青, 周文, 汪幸. 预浓缩器热交换处理方法及装置. CN: CN102243149A, 2011-11-16.

[483] 王琴, 柳江, 刘明. 一种降低存储器读干扰的电路及方法. CN: CN102237131A, 2011-11-09.

[484] 冀永辉, 丁川, 刘明, 王琴, 龙世兵, 闫锋. 一种光学成像器件结构. CN: CN102214663A, 2011-10-12.

[485] 冀永辉, 王风虎, 刘明, 王琴, 龙世兵, 闫锋. 一种消除成像器件工艺失配和成像非线性影响的方法. CN: CN102213614A, 2011-10-12.

[486] 龙世兵, 刘明, 陈宝钦, 谢常青, 李友, 李新涛, 张建宏, 张卫红, 王冠亚, 谢文妞. 一种增强光学掩模分辨率及制造高分辨率光学掩模的方法. CN: CN102213913A, 2011-10-12.

[487] 谢常青, 方磊, 朱效立, 李冬梅, 刘明. 一种制作凹面型X射线聚焦小孔的方法. CN: CN102214492A, 2011-10-12.

[488] 谢常青, 方磊, 朱效立, 李冬梅, 刘明. 一种制作位相型波带片的方法. CN: CN102207569A, 2011-10-05.

[489] 赵珉, 陈宝钦, 刘明, 牛洁斌. 一种电子束曝光散射参数的提取方法. CN: CN101510050B, 2011-09-07.

[490] 商立伟, 姬濯宇, 刘明. 一种低电压有机薄膜晶体管及其制备方法. CN: CN102117887A, 2011-07-06.

[491] 王琴, 杨潇楠, 刘明, 王永. 基于纳米晶浮栅结构的多值非挥发性存储器的存储方法. CN: CN102117656A, 2011-07-06.

[492] 王琴, 杨潇楠, 刘明, 王永. 一种基于应变硅的纳米晶非挥发性存储器及其制作方法. CN: CN102117812A, 2011-07-06.

[493] 王琴, 杨潇楠, 刘明, 王永. 一种基于纳米晶的平行栅OTP存储器. CN: CN102117811A, 2011-07-06.

[494] 商立伟, 姬濯宇, 刘明. 一种闭环式有机场效应晶体管及其制作方法. CN: CN102117888A, 2011-07-06.

[495] 王琴, 杨潇楠, 刘明, 王永. 一种用于OTP外围电路的电平转换电路及转换方法. CN: CN102118156A, 2011-07-06.

[496] 王琴, 刘璟, 龙世兵, 刘明. 一种电荷俘获型非易失存储器及其制作方法. CN: CN102117810A, 2011-07-06.

[497] 王琴, 柳江, 刘明. 一种存储器读出电路. CN: CN102117644A, 2011-07-06.

[498] 王琴, 刘璟, 龙世兵, 刘明. 一种电荷俘获型非易失存储器及其制作方法. CN: CN102117838A, 2011-07-06.

[499] 商立伟, 刘明, 姬濯宇. 有机场效应晶体管阈值电压的调制方法. CN: CN102104113A, 2011-06-22.

[500] 刘明, 王宏, 姬濯宇, 商立伟, 刘兴华. 顶接触结构有机场效应晶体管的制备方法. CN: CN102104112A, 2011-06-22.

[501] 贾佳, 谢长青, 刘明. 部分环带光子筛及其制作方法. CN: CN101614961B, 2011-06-22.

[502] 王琴, 柳江, 刘明. 一种存储器读出电路以及存储器. CN: CN102081959A, 2011-06-01.

[503] 谢常青, 潘一鸣, 朱效立, 贾佳, 刘明. 一种方孔光子筛及其制作方法. CN: CN102073084A, 2011-05-25.

[504] 刘明, 王宏, 姬濯宇, 商立伟, 刘兴华. 一种有机二极管器件及其制备方法. CN: CN102074653A, 2011-05-25.

[505] 刘明, 左青云, 龙世兵. 一次编程存储器的多值存储方法. CN: CN102074270A, 2011-05-25.

[506] 谢常青, 潘一鸣, 朱效立, 贾佳, 刘明. 用于大口径成像的复合型光子筛及其制作方法. CN: CN102043178A, 2011-05-04.

[507] 贾佳, 谢长青, 刘明. 阵列3环多值位相环匀光器及其制作方法. CN: CN102023390A, 2011-04-20.

[508] 贾佳, 谢长青, 刘明. 阵列光子筛匀光器及其制作方法. CN: CN102023388A, 2011-04-20.

[509] 贾佳, 谢长青, 刘明. 阵列部分环带光子筛匀光器及其制作方法. CN: CN102023389A, 2011-04-20.

[510] 贾佳, 谢长青, 刘明. 阵列环带光子筛匀光器及其制作方法. CN: CN102023387A, 2011-04-20.

[511] 贾佳, 谢长青, 刘明. 阵列3环2值位相环匀光器及其制作方法. CN: CN102023391A, 2011-04-20.

[512] 贾佳, 谢长青, 刘明. 阵列2环位相环匀光器及其制作方法. CN: CN102023392A, 2011-04-20.

[513] 贾佳, 谢长青, 刘明. 阵列全环光子筛匀光器及其制作方法. CN: CN102023386A, 2011-04-20.

[514] 商立伟, 刘明, 涂德钰, 刘舸, 刘兴华. 一种垂直沟道有机场效应晶体管的制备方法. CN: CN101404321B, 2011-04-20.

[515] 朱效立, 宋曦, 刘宇, 谢常青, 刘明. 采用PECVD制备碳化硅薄膜的方法. CN: CN101985743A, 2011-03-16.

[516] 朱效立, 宋曦, 陈晨, 谢常青, 刘明. 一种制备非晶碳化硅薄膜的方法. CN: CN101985732A, 2011-03-16.

[517] 刘明, 张森, 刘琦, 龙世兵. 一种实现多值电阻存储器的方法. CN: CN101964395A, 2011-02-02.

[518] 贾锐, 陈晨, 李维龙, 刘明, 叶甜春. 一种制备非晶硅薄膜的方法. CN: CN101928918A, 2010-12-29.

[519] 朱效立, 宋曦, 刘宇, 谢常青, 刘明. 一种制备碳化硅薄膜的方法. CN: CN101928933A, 2010-12-29.

[520] 贾佳, 潘一鸣, 谢常青, 朱效立, 刘明. 基于HSQ工艺的制作位相型光子筛的方法. CN: CN101923182A, 2010-12-22.

[521] 刘明, 左青云, 龙世兵. 一种用于交叉阵列结构存储器的整流器件. CN: CN101882628A, 2010-11-10.

[522] 龙世兵, 刘明, 陈宝钦, 谢常青, 贾锐, 徐连生. 多功能离子束溅射设备. CN: CN101880862A, 2010-11-10.

[523] 龙世兵, 刘明, 陈宝钦, 谢常青, 贾锐, 徐连生. 多功能离子束溅射沉积与刻蚀设备. CN: CN101880863A, 2010-11-10.

[524] 贾锐, 朱晨昕, 陈晨, 李维龙, 李昊峰, 张培文, 刘明, 刘新宇, 叶甜春. 一种制作晶硅高效太阳能电池的方法. CN: CN101882643A, 2010-11-10.

[525] 贾佳, 谢常青, 刘明. 环带光子筛及其制作方法. CN: CN101881844A, 2010-11-10.

[526] 刘明, 刘琦, 龙世兵, 王艳, 张森. 一种电阻式非易失存储器件及其制作方法. CN: CN101872836A, 2010-10-27.

[527] 谢常青, 马杰, 朱效立, 刘明, 陈宝钦, 叶甜春. 带有通孔的X射线光刻掩模. CN: CN101846874A, 2010-09-29.

[528] 贾锐, 朱晨昕, 陈晨, 李维龙, 张培文, 李昊峰, 刘明. 利用传统工艺制备双面PN结晶硅太阳能电池的方法. CN: CN101840954A, 2010-09-22.

[529] 贾锐, 李维龙, 朱晨昕, 陈晨, 张培文, 刘明, 刘新宇, 叶甜春. 基于硅量子点超晶格结构的晶硅太阳能电池的制备方法. CN: CN101840955A, 2010-09-22.

[530] 贾锐, 朱晨昕, 陈晨, 李维龙, 张培文, 刘明, 刘新宇, 叶甜春. 一种制备表面混合调制晶硅太阳能电池的方法. CN: CN101840953A, 2010-09-22.

[531] 贾锐, 朱晨昕, 陈晨, 李维龙, 张培文, 李昊峰, 赵盛杰, 刘明. 一种制备双面PN结太阳能电池的方法. CN: CN101840952A, 2010-09-22.

[532] 王琴, 李维龙, 贾锐, 刘明, 叶甜春. 一种制备单电子晶体管的方法. CN: CN101383285B, 2010-09-22.

[533] 刘明, 王永, 王琴, 杨潇楠. 一种在线检测硅纳米晶形态的方法. CN: CN101813624A, 2010-08-25.

[534] 刘明, 王永, 王琴, 杨潇楠. 一种多层浮栅非易失性存储器结构及其制作方法. CN: CN101814505A, 2010-08-25.

[535] 刘明, 王永, 王琴, 杨潇楠. 一种复合存储介质浮栅存储器结构及其制作方法. CN: CN101814506A, 2010-08-25.

[536] 刘明, 刘璟, 王琴, 龙世兵. 一种制备浮栅型非易失性存储器中复合俘获层的方法. CN: CN101814430A, 2010-08-25.

[537] 柳江, 刘明, 姬濯宇, 陈宝钦. 一种图形挖空方法. CN: CN101814189A, 2010-08-25.

[538] 刘明, 刘璟, 王琴, 龙世兵. 浮栅型非易失性存储器中复合俘获层的制备方法. CN: CN101807521A, 2010-08-18.

[539] 刘明, 刘璟, 王琴, 胡媛. 纳米晶浮栅非易失存储器及其制作方法. CN: CN101807576A, 2010-08-18.

[540] 龙世兵, 刘明, 李维龙, 贾锐. 用纳米晶材料作为库仑岛的纳米电子器件及其制作方法. CN: CN101800242A, 2010-08-11.

[541] 刘舸, 刘明, 刘兴华, 商立伟, 王宏, 柳江. 对有机场效应晶体管中有源层进行原位保护的方法. CN: CN101800283A, 2010-08-11.

[542] 刘舸, 刘明, 刘兴华, 商立伟, 王宏, 柳江. 双层上电极有机场效应晶体管的制作方法. CN: CN101800284A, 2010-08-11.

[543] 刘舸, 刘明, 刘兴华, 商立伟, 王宏, 柳江. 采用体有源层材料作为前驱体诱导有源层有序生长的方法. CN: CN101800285A, 2010-08-11.

[544] 刘舸, 刘明, 刘兴华, 商立伟, 王宏, 柳江. 一种平面结构有机场效应晶体管的制作方法. CN: CN101800287A, 2010-08-11.

[545] 刘明, 杨仕谦, 王琴, 龙世兵. 一种制作复合俘获层的方法. CN: CN101800169A, 2010-08-11.

[546] 姬濯宇, 王宏, 刘明, 商立伟. 基于顶栅结构有机场效应晶体管集成电路的制备方法. CN: CN101800286A, 2010-08-11.

[547] 柳江, 刘明, 姬濯宇, 涂德钰, 刘兴华, 商立伟, 刘舸, 王宏. 阻变存储器的检测电路及检测设备. CN: CN101783182A, 2010-07-21.

[548] 余兆安, 龙世兵, 刘明, 张森, 刘琦, 柳江. 一种用于测试阻变存储器性能指标的限流电路. CN: CN101783183A, 2010-07-21.

[549] 刘明, 左青云, 龙世兵. 一种具有非对称电学特性的阻变存储器. CN: CN101783389A, 2010-07-21.

[550] 刘明, 张森, 龙世兵, 刘琦. 驱动电阻转变型存储器实现多值存储的电路及方法. CN: CN101783170A, 2010-07-21.

[551] 余兆安, 贾锐, 龙世兵, 刘明, 陈晨. 产生磁场的装置及对低温探针台外加磁场的方法. CN: CN101783223A, 2010-07-21.

[552] 商立伟, 刘明, 姬濯宇, 刘舸, 刘兴华, 柳江. 一种图形化有机场效应晶体管有源层的制备方法. CN: CN101783393A, 2010-07-21.

[553] 商立伟, 刘明, 姬濯宇, 刘舸, 刘兴华, 柳江. 有机双极型晶体管及其制备方法. CN: CN101783363A, 2010-07-21.

[554] 刘明, 刘琦, 龙世兵, 管伟华. 带有自整流效应的非易失电阻转变型存储器. CN: CN101783388A, 2010-07-21.

[555] 刘舸, 刘明, 刘兴华, 商立伟, 王宏, 柳江. 一种对上电极进行费米能级修饰的方法. CN: CN101783394A, 2010-07-21.

[556] 龙世兵, 刘明, 李维龙, 贾锐. 一种纳米电子器件及其制作方法. CN: CN101783364A, 2010-07-21.

[557] 刘舸, 刘明, 刘兴华, 商立伟, 王宏, 柳江. 一种底电极结构有机场效应晶体管的制作方法. CN: CN101752505A, 2010-06-23.

[558] 刘舸, 刘明, 刘光华, 商立伟, 王宏, 柳江. 一种制备有源层材料取向有序的有机场效应晶体管的方法. CN: CN101752502A, 2010-06-23.

[559] 刘舸, 刘明, 刘兴华, 商立伟, 王宏, 柳江. 一种修饰有机场效应晶体管底电极的方法. CN: CN101752506A, 2010-06-23.

[560] 刘舸, 刘明, 刘兴华, 商立伟, 王宏, 柳江. 一种制作底电极平坦化的有机场效应晶体管的方法. CN: CN101752507A, 2010-06-23.

[561] 刘舸, 刘明, 刘兴华, 商立伟, 王宏, 柳江. 一种制备无过孔全有机场效应晶体管的方法. CN: CN101752504A, 2010-06-23.

[562] 刘舸, 刘明, 刘兴华, 商立伟, 王宏, 柳江. 采用有源层图形化制备有机场效应晶体管的方法. CN: CN101752508A, 2010-06-23.

[563] 刘舸, 刘明, 刘兴华, 商立伟, 王宏, 柳江. 一种制备过孔的方法. CN: CN101752300A, 2010-06-23.

[564] 刘舸, 刘明, 刘兴华, 商立伟, 王宏, 柳江. 一种T形沟道的有机场效应晶体管的制作方法. CN: CN101752503A, 2010-06-23.

[565] 刘舸, 刘明, 刘兴华, 商立伟, 王宏, 柳江. 一种制备混合接触型电极的有机场效应晶体管的方法. CN: CN101752501A, 2010-06-23.

[566] 刘明, 韩买兴. 数模混合多路独立控制开关电路. CN: CN101753121A, 2010-06-23.

[567] 姬濯宇, 商立伟, 刘明. 基于衬底修饰制备各向异性有机场效应管的方法. CN: CN101740721A, 2010-06-16.

[568] 刘明, 柳江, 姬濯宇, 陈宝钦. 一种在LEdit中绘制矢量字符的方法. CN: CN101739485A, 2010-06-16.

[569] 王琴, 李维龙, 贾锐, 刘明, 叶甜春. 一种基于SOI量子线的单电子晶体管及其制作方法. CN: CN101276836B, 2010-06-09.

[570] 赵以贵, 李晶晶, 朱效立, 牛洁斌, 刘明. 一种采用X射线曝光制作声表面波器件的方法. CN: CN101677231A, 2010-03-24.

[571] 赵以贵, 刘明, 牛洁斌. 采用电子束直写曝光制作声表面波器件的方法. CN: CN101676797A, 2010-03-24.

[572] 贾佳, 谢长青, 刘明. 全环光子筛及其制作方法. CN: CN101676750A, 2010-03-24.

[573] 涂德钰, 刘明, 谢常青, 朱效力, 贾 锐. 一种制备交叉结构有机分子器件的方法. CN: CN100594626C, 2010-03-17.

[574] 刘明, 左青云, 龙世兵. 一种基于阻变存储器的一次编程存储器及其制备方法. CN: CN101667460A, 2010-03-10.

[575] 商立伟, 刘明, 涂德钰, 甄丽娟, 刘舸, 刘兴华. 应用于有机电路的双金属电极结构及其制备方法. CN: CN101661993A, 2010-03-03.

[576] 贾佳, 谢长青, 刘明. 位相型波带片光子筛. CN: CN101661225A, 2010-03-03.

[577] 商立伟, 刘明, 涂德钰, 甄丽娟, 刘舸, 刘兴华. 金属环形栅有机晶体管结构及其制备方法. CN: CN101656295A, 2010-02-24.

[578] 甄丽娟, 刘明, 商立伟, 刘舸. 一种制备有机场效应晶体管的方法. CN: CN100585904C, 2010-01-27.

[579] 朱效立, 潘一鸣, 谢常青, 贾 佳, 刘明. 一种大口径成像光子筛及其制作方法. CN: CN101630027A, 2010-01-20.

[580] 赵珉, 朱效立, 陈宝钦, 刘明. 在厚负性高分辨率电子束抗蚀剂HSQ上制作密集图形的方法. CN: CN101625522A, 2010-01-13.

[581] 甄丽娟, 商立伟, 刘明. 一种有源层图形化的有机薄膜晶体管的制备方法. CN: CN100573959C, 2009-12-23.

[582] 赵珉, 陈宝钦, 刘明, 牛洁斌. 一种扫描电镜放大倍率校准标准样品的制作方法. CN: CN101598645A, 2009-12-09.

[583] 刘明, 李颖弢, 龙世兵, 王琴, 左青云, 王艳, 刘琦, 张森. 一种二元金属氧化物阻变存储器及其制作方法. CN: CN101587937A, 2009-11-25.

[584] 刘明, 李颖弢, 龙世兵, 王琴, 刘琦, 张森, 王艳, 左青云. 一种掺杂ZrO 2 阻变存储器及其制作方法. CN: CN101577308A, 2009-11-11.

[585] 刘明, 左青云, 龙世兵. 一次编程存储器及其制造方法. CN: CN101577311A, 2009-11-11.

[586] 刘明, 李颖弢, 龙世兵, 王琴, 刘琦, 张森, 王艳, 左青云. 一种电阻转变型存储器及其制作方法. CN: CN101577310A, 2009-11-11.

[587] 贾 锐, 李维龙, 陈 晨, 刘明, 陈宝钦, 谢常青. 基于共蒸法制备硅纳米晶超晶格结构的方法. CN: CN101565855A, 2009-10-28.

[588] 甄丽娟, 商立伟, 刘明, 刘兴华, 涂德钰, 刘舸. 一种制备镂空的聚酰亚胺蒸发掩模漏版的方法. CN: CN101566799A, 2009-10-28.

[589] 刘明, 王永, 王琴, 杨潇楠, 龙世兵, 谢常青. 一种基于氮化处理的纳米晶浮栅存储器的制备方法. CN: CN101556938A, 2009-10-14.

[590] 贾锐, 李维龙, 陈晨, 刘明, 陈宝钦, 谢长青. 一种制备硅纳米晶超晶格结构的方法. CN: CN101546703A, 2009-09-30.

[591] 李冬梅, 刘明. 一种蓝宝石声表面波换能器的制作方法. CN: CN101540591A, 2009-09-23.

[592] 商立伟, 涂德钰, 王丛舜, 刘明. 一种结合压印技术制备各向异性有机场效应管的方法. CN: CN100544053C, 2009-09-23.

[593] 贾锐, 李维龙, 陈晨, 朱晨昕, 李昊峰, 张培文, 刘明. 一种单电子存储器的制备方法. CN: CN101521181A, 2009-09-02.

[594] 陈晨, 贾锐, 朱晨昕, 李维龙, 李昊峰, 张培文, 赵盛杰, 刘明. 硅基纳米柱阵列异质结薄膜太阳能电池及其制备方法. CN: CN101521239A, 2009-09-02.

[595] 刘兴华, 徐德钰, 朱效立, 谢常青, 刘明. 基于X射线曝光技术制作透光纳米压印模板的方法. CN: CN101520600A, 2009-09-02.

[596] 朱效立, 谢常青, 叶甜春, 刘明. 用于X射线曝光的光刻掩模结构及其制备方法. CN: CN101515110A, 2009-08-26.

[597] 龙世兵, 王琴, 李志刚, 刘明, 陈宝钦. 一种硅基侧栅单电子晶体管的制作方法. CN: CN100533768C, 2009-08-26.

[598] 刘明, 杨仕谦, 王琴, 龙世兵. 钨钛合金纳米晶浮栅结构及其制备方法. CN: CN101494237A, 2009-07-29.

[599] 贾佳, 姜骥, 谢长青, 刘明. 圆环型光子筛及其制作方法. CN: CN101470270A, 2009-07-01.

[600] 刘琦, 刘明, 龙世兵, 贾锐, 管伟华. 二元过渡族金属氧化物非挥发电阻转变型存储器. CN: CN101471421A, 2009-07-01.

[601] 贾佳, 姜骥, 谢长青, 刘明. 激光远距离传输中央光斑的超分辨压缩振幅光调制器. CN: CN101470269A, 2009-07-01.

[602] 商立伟, 刘明, 涂德钰, 甄丽娟, 刘舸, 刘兴华. 一种制备交叉线阵列结构有机分子器件的方法. CN: CN101459223A, 2009-06-17.

[603] 陈 晨, 贾 锐, 李维龙, 刘明, 陈宝钦, 龙世兵, 谢常青, 涂德钰, 刘 琦. 一种制备硅纳米晶薄膜的方法. CN: CN101457346A, 2009-06-17.

[604] 李维龙, 贾锐, 陈晨, 刘明, 陈宝钦, 龙世兵, 谢常青, 王琴, 涂德钰. 采用电子束蒸发方式制备HfO 2 纳米晶的方法. CN: CN101459085A, 2009-06-17.

[605] 李维龙, 贾 锐, 陈 晨, 刘明, 陈宝钦, 谢常青, 龙世兵. 制备埋嵌硅纳米晶的高介电常数栅介质的方法. CN: CN101452844A, 2009-06-10.

[606] 姜 骥, 谢常青, 岑专专, 商立伟, 刘兴华, 刘明. 一种纳米压印光刻机. CN: CN101452207A, 2009-06-10.

[607] 李维龙, 贾 锐, 刘明, 陈宝钦, 龙世兵, 谢常青, 王 琴, 涂德钰, 刘 琦. 采用电子束蒸发方式制备硅纳米晶体的方法. CN: CN101452838A, 2009-06-10.

[608] 龙世兵, 刘明, 贾锐, 陈宝钦, 王琴, 涂德钰, 胡媛, 管伟华, 刘琦, 李维龙, 王永, 杨潇楠, 张森. 一种金属纳米晶浮栅非挥发性存储器及其制作方法. CN: CN101452963A, 2009-06-10.

[609] 管伟华, 龙世兵, 刘明. 一种制作阻变存储器交叉阵列的方法. CN: CN101452891A, 2009-06-10.

[610] 刘兴华, 涂德钰, 朱效立, 谢常青, 刘明. 基于双层胶工艺制作X射线曝光掩膜的方法. CN: CN101452203A, 2009-06-10.

[611] 陈晨, 贾锐, 李维龙, 姚嘉宁, 朱晨昕, 李昊峰, 刘明, 刘新宇. 垂直可变磁场装置. CN: CN101446627A, 2009-06-03.

[612] 商立伟, 刘明, 涂德钰, 刘舸, 刘兴华. 管状栅电极垂直沟道有机场效应晶体管及其制备方法. CN: CN101447552A, 2009-06-03.

[613] 朱效立, 谢常青, 叶甜春, 刘明. 一种制作聚酰亚胺有机镂空薄膜的方法. CN: CN101445614A, 2009-06-03.

[614] 甄丽娟, 商立伟, 刘兴华, 刘明. 一次掩膜光刻同时定义有机薄膜晶体管源漏栅电极的方法. CN: CN101442104A, 2009-05-27.

[615] 龙世兵, 王琴, 陈杰智, 刘明. 一种SOI基顶栅单电子晶体管的制备方法. CN: CN100492664C, 2009-05-27.

[616] 贾锐, 李维龙, 陈晨, 朱晨昕, 李昊峰, 刘明, 刘新宇. 低温探针台防热辐射铝箔屏及其制造方法. CN: CN101436438A, 2009-05-20.

[617] 贾佳, 谢长青, 刘明. 超分辨菲涅耳波带片. CN: CN101430428A, 2009-05-13.

[618] 贾佳, 谢长青, 刘明. 超分辨光子筛. CN: CN101430427A, 2009-05-13.

[619] 管伟华, 龙世兵, 刘明. 一种制作自隔离电阻转变型存储器的方法. CN: CN101431144A, 2009-05-13.

[620] 涂德钰, 刘明, 谢常青, 刘新华, 商立伟. 用于电子束光刻剥离的去除双层胶的方法. CN: CN101430503A, 2009-05-13.

[621] 涂德钰, 刘明, 王 慰, 商立伟, 谢常青. 三维CMOS与分子开关器件的混合集成电路结构. CN: CN101431070A, 2009-05-13.

[622] 涂德钰, 刘明, 王 慰, 商立伟, 谢常青. 三维CMOS与分子开关器件的混合集成电路结构的制备方法. CN: CN101431032A, 2009-05-13.

[623] 刘明, 李颖弢, 龙世兵, 王琴, 王艳, 刘琦, 张森, 左青云. 电阻转变型存储器及其制造方法. CN: CN101425559A, 2009-05-06.

[624] 姬濯宇, 刘明, 商立伟, 王宏. 各向异性有机场效应管的制备方法. CN: CN101425563A, 2009-05-06.

[625] 商立伟, 刘明, 涂德钰, 刘舸, 刘兴华. 一种纳米级沟道有机场效应晶体管及其制备方法. CN: CN101425562A, 2009-05-06.

[626] 陈晨, 贾锐, 朱晨昕, 李维龙, 李昊峰, 王琴, 刘明, 田继红, 路程. 氮化硅湿法腐蚀方法. CN: CN101417890A, 2009-04-29.

[627] 涂德钰, 刘明, 商立伟, 刘新华, 谢常青. 一种制备交叉分子电子器件的方法. CN: CN101420014A, 2009-04-29.

[628] 管伟华, 刘明, 龙世兵, 贾锐. 嵌入纳米晶颗粒的非挥发电阻转变型存储器. CN: CN101420012A, 2009-04-29.

[629] 李维龙, 贾 锐, 刘明, 陈宝钦, 龙世兵, 谢常青, 王 琴, 商利伟, 涂德钰, 刘 琦, 陈 晨. 一种通过金属铬掩蔽膜进行干法刻蚀的方法. CN: CN101419400A, 2009-04-29.

[630] 涂德钰, 刘明, 刘新华, 商立伟, 谢常青. 一种电学双稳态有机薄膜的制备方法. CN: CN101419815A, 2009-04-29.

[631] 李维龙, 贾 锐, 刘明, 陈宝钦, 龙世兵, 谢常青, 王 琴, 涂德钰, 刘 琦. 利用电子束蒸发设备制备硅纳米晶体的方法. CN: CN101418467A, 2009-04-29.

[632] 陈晨, 贾锐, 李维龙, 朱晨昕, 李昊峰, 刘明, 田继红, 路程. 高密度硅纳米晶薄膜的制备方法. CN: CN101414552A, 2009-04-22.

[633] 刘明, 管伟华, 龙世兵. 固态电解液阻变存储器及其制备方法. CN: CN101414658A, 2009-04-22.

[634] 朱晨昕, 贾锐, 陈晨, 李维龙, 李昊峰, 王琴, 刘明. 非挥发存储器的制备方法. CN: CN101399208A, 2009-04-01.

[635] 贾佳, 谢长青, 刘明. 振幅型波带片光子筛. CN: CN101398493A, 2009-04-01.

[636] 朱晨昕, 贾锐, 李维龙, 陈晨, 李昊峰, 王琴, 刘明. 非挥发存储器的制备方法. CN: CN101399209A, 2009-04-01.

[637] 胡媛, 刘明, 龙世兵, 杨清华, 管伟华, 李志刚. 双层隧穿介质结构的纳米晶浮栅非易失存储器及制作方法. CN: CN101399289A, 2009-04-01.

[638] 商立伟, 刘明, 涂德钰, 王丛舜, 贾锐, 龙世兵. 一种双介质层有机场效应晶体管及其制作方法. CN: CN101393966A, 2009-03-25.

[639] 赵珉, 陈宝钦, 刘明, 牛洁斌. 一种纳米尺度图形的制作方法. CN: CN101382733A, 2009-03-11.

[640] 王琴, 管伟华, 刘琦, 胡媛, 李维龙, 龙世兵, 贾锐, 陈宝钦, 刘明. 多层纳米晶浮栅结构的非挥发性存储器及其制备方法. CN: CN101383378A, 2009-03-11.

[641] 胡媛, 刘明, 龙世兵, 杨清华, 管伟华, 李志刚. 多介质复合隧穿层的纳米晶浮栅存储器及其制作方法. CN: CN101383379A, 2009-03-11.

[642] 王琴, 贾锐, 李维龙, 王从舜, 龙世兵, 陈宝钦, 刘明, 叶甜春. 一种制备射频单电子晶体管位移传感器的方法. CN: CN101381070A, 2009-03-11.

[643] 李金儒, 赵珉, 王琴, 刘明, 陈宝钦. 将CIF格式圆形切割成PG3600格式矩形的方法. CN: CN101334812A, 2008-12-31.

[644] 李金儒, 赵珉, 王琴, 刘明, 陈宝钦. 将CIF格式多边形切割成PG3600格式矩形的方法. CN: CN101334811A, 2008-12-31.

[645] 管伟华, 刘明, 龙世兵, 李志刚, 胡媛. 一种制作金属纳米晶非挥发性存储器的方法. CN: CN101330008A, 2008-12-24.

[646] 胡媛, 刘明, 龙世兵, 杨清华, 管伟华, 李志刚, 刘琦. 一种纳米晶浮栅结构的非挥发性存储单元及其制作方法. CN: CN101312213A, 2008-11-26.

[647] 胡媛, 刘明, 龙世兵, 杨清华, 管伟华, 李志刚, 刘琦. 利用高k介质和纳米晶浮栅的非易失存储器及其制作方法. CN: CN101312212A, 2008-11-26.

[648] 涂德钰, 王丛舜, 刘明. 一种紫外固化纳米压印模版的制备方法. CN: CN100437361C, 2008-11-26.

[649] 龙世兵, 刘明, 陈宝钦. 一种用负性电子抗蚀剂制备纳米电极的方法. CN: CN100435285C, 2008-11-19.

[650] 李大勇, 刘明. 一种有机电致发光元件及其制作方法. CN: CN101276882A, 2008-10-01.

[651] 李大勇, 刘明. 用于有机电致发光显示器/照明器件的容错电路. CN: CN101276528A, 2008-10-01.

[652] 李金儒, 赵珉, 王琴, 刘明, 陈宝钦. 一种制作百纳米级螺线管或网状结构的方法. CN: CN101276149A, 2008-10-01.

[653] 王琴, 贾锐, 李维龙, 龙世兵, 陈宝钦, 刘明, 叶甜春. 一种纳米晶浮栅非挥发性存储器及其制作方法. CN: CN101276841A, 2008-10-01.

[654] 商立伟, 刘明, 涂德钰, 王丛舜, 贾锐, 龙世兵. 一种有机反熔丝及其制备方法. CN: CN101154711A, 2008-04-02.

[655] 龙世兵, 王琴, 李志刚, 刘明, 陈宝钦. 一种硅基侧栅单电子晶体管及其制作方法. CN: CN101123272A, 2008-02-13.

[656] 龙世兵, 李志刚, 刘明, 陈宝钦. 一种金属纳米晶薄膜的制备方法. CN: CN101122006A, 2008-02-13.

[657] 龙世兵, 陈杰智, 刘明, 陈宝钦. 一种SOI基顶栅单电子晶体管及其制备方法. CN: CN101123274A, 2008-02-13.

[658] 王琴, 王丛舜, 龙世兵, 刘明, 叶甜春. 一种射频单电子晶体管位移传感器的设计方法. CN: CN101089545A, 2007-12-19.

[659] 王丛舜, 商立伟, 涂德钰, 刘明. 一种高迁移率各向异性有机场效应管的制备方法. CN: CN101090148A, 2007-12-19.

[660] 龙世兵, 陈杰智, 李志刚, 刘明, 陈宝钦. 一种硅基平面侧栅单电子晶体管及其制作方法. 中国: CN101090134, 2007-12-19.

[661] 龙世兵, 陈杰智, 李志刚, 刘明, 陈宝钦. 一种纳米级库仑岛结构的制备方法. CN: CN101086966A, 2007-12-12.

[662] 商立伟, 王丛舜, 刘明. 一种通过热压来制备各向异性有机场效应管的方法. CN: CN101083304A, 2007-12-05.

[663] 商立伟, 涂德钰, 王丛舜, 刘明. 一种纳米级交叉线阵列结构有机分子器件的制备方法. CN: CN101083301A, 2007-12-05.

[664] 商立伟, 涂德钰, 王丛舜, 刘明. 一种基于模版制备各向异性有机场效应管的方法. CN: CN101083303A, 2007-12-05.

[665] 王丛舜, 牛洁斌, 涂德钰, 谢常青, 陈宝钦, 刘明. 一种声表面波器件的制备方法. CN: CN101022270A, 2007-08-22.

[666] 谢常青, 刘明. 用于193nm光学光刻的侧墙铬衰减型移相掩模制作方法. CN: CN101017322A, 2007-08-15.

[667] 涂德钰, 王丛舜, 刘明. 利用多层侧墙技术制备纳米压印模版的方法. CN: CN1982202A, 2007-06-20.

[668] 龙世兵, 刘明, 陈宝钦. 采用正性电子抗蚀剂制备金属纳米电极的方法. CN: CN1979768A, 2007-06-13.

[669] 王丛舜, 牛洁斌, 涂德钰, 谢常青, 陈宝钦, 刘明. 纳米压印和光学光刻匹配混合的声表面波器件制备方法. CN: CN1979340A, 2007-06-13.

[670] 王丛舜, 胡文平, 涂德钰, 姬濯宇, 刘明. 基于自组装技术的交叉阵列结构有机器件制备方法. CN: CN1949475A, 2007-04-18.

[671] 涂德钰, 王丛舜, 刘明. 基于氮化硅镂空掩模的纳米电极制备方法. CN: CN1901141A, 2007-01-24.

[672] 王丛舜, 涂德钰, 刘明. 采用氧化硅填充-回刻的交叉阵列结构有机器件制备方法. CN: CN1897322A, 2007-01-17.

[673] 涂德钰, 王从舜, 刘明. 一种交叉线阵列结构有机分子器件的制备方法. CN: CN1885521A, 2006-12-27.

[674] 刘明, 陈宝钦, 谢常青. 全透明无铬移相掩模实现100纳米图形加工的方法. CN: CN1847984A, 2006-10-18.

[675] 刘明, 徐秋霞, 陈宝钦, 龙世兵, 牛洁斌. 电子束和光学混合和匹配曝光套准标记的制备方法. CN: CN1847983A, 2006-10-18.

[676] 欧毅, 陈大鹏, 刘明, 刘辉. 硅基液晶铝反射电极的钝化保护方法. CN: CN1841149A, 2006-10-04.

[677] 刘明, 王云翔, 陈宝钦, 徐秋霞. 一种用负性化学放大抗蚀剂曝光亚50nm图形的方法. CN: CN1818788A, 2006-08-16.

[678] 刘明, 叶甜春, 谢常青, 张建宏. 用电子束大小电流混合一次曝光制备X射线掩模的方法. CN: CN1818789A, 2006-08-16.

[679] 龙世兵, 李志刚, 谢常青, 刘明, 陈宝钦. 避免ZEP520电子抗蚀剂产生裂纹的方法. CN: CN1815369A, 2006-08-09.

[680] 谢常青, 范东升, 刘明. 纳米压印与光学光刻混合制作T型栅的方法. CN: CN1797200A, 2006-07-05.

[681] 谢常青, 范东升, 刘明. 单次纳米压印制作深纳米T型栅的方法. CN: CN1782879A, 2006-06-07.

[682] 徐秋霞, 钱鹤, 刘明, 赵玉印. 一种纳米线宽多晶硅栅刻蚀掩膜图形的形成方法. CN: CN1700421A, 2005-11-23.

出版信息

   
发表论文
[1] Jiawei Wang, Dongyang Liu, Lishuai Yu, Feilong Liu, Jiebin Niu, Guanhua Yang, Congyan Lu, Nianduan Lu, 李泠, Ming Liu. Collective Transport for Nonlinear Current-Voltage characteristics of Doped Conducting Polymers. Physical Review Letters[J]. 2023, 130(17701): 1-6, [2] Guo, Yifu, Yang, Mingqun, Deng, Junyang, Ding, Chenming, Duan, Chunhui, Li, Mengmeng, Li, Ling, Liu, Ming. Bottom-Up Growth of n-Type Polymer Monolayers for High-Performance Complementary Integrated Circuits. ADVANCED ELECTRONIC MATERIALS. 2023, http://dx.doi.org/10.1002/aelm.202201307.
[3] Wang, Di, Tang, Ruifeng, Lin, Huai, Liu, Long, Xu, Nuo, Sun, Yan, Zhao, Xuefeng, Wang, Ziwei, Wang, Dandan, Mai, Zhihong, Zhou, Yongjian, Gao, Nan, Song, Cheng, Zhu, Lijun, Wu, Tom, Liu, Ming, Xing, Guozhong. Spintronic leaky-integrate-fire spiking neurons with self-reset and winner-takes-all for neuromorphic computing. NATURE COMMUNICATIONS[J]. 2023, 14(1): http://dx.doi.org/10.1038/s41467-023-36728-1.
[4] Jingrui Guo, Ying Sun, 汪令飞, Xinlv Duan, Kailiang Huang, Zhaogui Wang, Junxiao Feng, Qian Chen, Shijie Huang, Lihua Xu, Di Geng, Guangfan Jiao, Shihui Yin, Zhengbo Wang, Weiliang Jing, Ling Li, Ming Liu. Compact Modeling of IGZO-based CAA-FETs with Time-zero-instability and BTI Impact on Device and Capacitor-less DRAM Retention Reliability. 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)null. 2022, [5] Sun Zongheng, Liu Ming, Zhou Yurong, Wang Qi, Yang Ying, Zhou Yuqin, Liu Fengzhen. 20% efficiency Mg/ PCBM /p-type silicon hybrid solar cells. SOLAR ENERGY MATERIALS AND SOLAR CELLS[J]. 2022, [6] Zheng Zuo, Qiuyue Zhang, Mingyang Han, Ming Liu, Yang Sun, Yanping Ma, WenHua Sun. 2-(Arylimino)benzylidene-8-arylimino-5,6,7-trihydroquinoline Cobalt(II) Dichloride Polymerization Catalysts for Polyethylenes with Narrow Polydispersity. CATALYSTS[J]. 2022, 12: https://doaj.org/article/8211133434dc4152bf628228ff7e91a0.
[7] Huoqiang, Xiaoxin Xu, Qing Luo, Guozhong Xing, Feng Zhang, Ming Liu. A Computing-in-memory macro with three-dimensional random-access memory. Nature Electronics[J]. 2022, [8] Wendong Lu, Zhengyong Zhu, Kaifei Chen, Menggan Liu, Bok-Moon Kang, XinLv Duan, Jiebin Niu, Fuxi Liao, Wang Dan, Xie-Shuai Wu, De-Yuan Xiao, Gui-Lei Wang, Di Geng, Abraham Yoo, Kan-Yu Cao, Nianduan Lu, Guanhua Yang, CHAO ZHAO, 李泠, Ming Liu. First Demonstration of Dual-Gate IGZO 2T0C DRAM with Novel Read Operation, One Bit Line in Single Cell, ION=1500 µA/µm@VDS=1V and Retention Time>300s. 2022 International Electron Devices Meeting (IEDM)null. 2022, [9] Chuanke Chen, XinLv Duan, Guanhua Yang, Congyan Lu, Di Geng, 李泠, Ming Liu. Inter-Layer Dielectric Engineering for Monolithic Stacking 4F2 -2T0C DRAM with Channel-All-Around (CAA) IGZO FET to Achieve Good Reliability (>10^4 s Bias Stress, >10^12 Cycles Endurance). 2022 International Electron Devices Meeting (IEDM)null. 2022, [10] Wang, Rui, Shi, Tuo, Zhang, Xumeng, Wei, Jinsong, Lu, Jian, Zhu, Jiaxue, Wu, Zuheng, Liu, Qi, Liu, Ming. Implementing in-situ self-organizing maps with memristor crossbar arrays for data mining and optimization. NATURECOMMUNICATIONS[J]. 2022, 13(1): http://dx.doi.org/10.1038/s41467-022-29411-4.
[11] Woyu Zhang, Wang, Shaocong, Yi Li, Xiaoxin Xu, Danian Dong, Nanjia Jiang, Fei Wang, Zeyu Guo, Renrui Fang, Chunmeng Dou, Kai Ni, Wang, Zhongrui, Dashan Shang, Ming Liu. Few-shot graph learning with robust and energy-efficient memory-augmented graph neural network (MAGNN) based on homogeneous computing-in-memory. 2022 IEEE Symposium on VLSI Technology and Circuitsnull. 2022, [12] 尹勋钊, 岳金山, 黄庆荣, 李超, 蔡嘉豪, 杨泽禹, 卓成, 刘明. 存算一体电路与跨层次协同设计优化:从SRAM到铁电晶体管. 中国科学:信息科学[J]. 2022, 52(4): 612-638, http://lib.cqvip.com/Qikan/Article/Detail?id=7107103193.
[13] Li, Xiaojuan, Bao, Weier, Liu, Ming, Meng, Jiaqi, Wang, Zicheng, Sun, Mingqi, Zhang, Liaoyun, Tian, Zhiyuan. Polymeric micelle-based nanoagents enable phototriggering combined chemotherapy and photothermal therapy with high sensitivity. BIOMATERIALS SCIENCE[J]. 2022, 10(19): 5520-5534, http://dx.doi.org/10.1039/d2bm00652a.
[14] Wenxuan Sun, Woyu Zhang, Jie Yu, Yi Li, Zeyu Guo, Jinru Lai, Danian Dong, Xu Zheng, Fei Wang, Shaoyang Fan, Xiaoxin Xu, Dashan Shang, Ming Liu. 3D Reservoir Computing with High Area Efficiency (5.12 TOPS/mm2) Implemented by 3D Dynamic Memristor Array for Temporal Signal Processing. IEEE Symposium on VLSI Technologynull. 2022, [15] Kaifei Chen, Jiebin Niu, Guanhua Yang, Menggan Liu, Wendong Lu, Fuxi Liao, Kailiang Huang, XinLv Duan, Congyan Lu, Jiawei Wang, Lingfei Wang,Mengmeng Li, Di Geng, Chao Zhao, Guilei Wang, Nianduan Lu,, Ling Li, Ming Liu. Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Length with Record-high Gm,max of 559 µS/µm at VDS=1 V, Record-low DIBL of 10 mV/V and Nearly Ideal SS of 63 mV/dec. 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)null. 2022, [16] Ming Liu, Weier Bao, Xinping Feng, Jiaqi Meng, Siyuan Liu, Wei Cui, Yishi Wu, Zhiyuan Tian. A double donor-π-acceptor type hydrogen sulfide fluorescent probe with nanomolar level sensitivity and second level response time for evaluating metformin-induced hepatotoxicity. SENSORS AND ACTUATORS: B. CHEMICAL. 2022, 359: [17] Sitao Zhang, Kainan Ma, Yibo Yin, Binbin Ren, Ming Liu. A Personalized Compression Method for Steady-State Visual Evoked Potential EEG Signals. INFORMATION[J]. 2022, 13(186): https://doaj.org/article/eae34acb606c42c3926036d9477011c1.
[18] Kailiang Huang, XinLv Duan, Junxiao Feng, Ying Sun, Congyan Lu, 陈传科, Guangfan Jiao, Xinpeng Lin, Jinhai Shao, Shihui Yin, Jiazhen Sheng, Zhaogui Wang, Wenqiang Zhang, Xichen Chuai, Jiebin Niu, Wenwu Wang, Ying Wu, Weiliang Jing, Zhengbo Wang, Jeffrey Xu, Guanhua Yang, Di Geng, 李泠, Ming Liu. Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (Vth + 1 V), Well-performed Thermal Stability up to 120 ℃ for Low Latency, High-density 2T0C 3D DRAM Application. 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)null. 2022, [19] Jiang, Nan, Wu, Meng, Li, Guilong, Li, Pengfa, Liu, Ming, Li, Zhongpei. Comparative effects of two humic substances on microbial dysbiosis in the rhizosphere soil where cucumber (Cucumis sativus L.) is grown. LAND DEGRADATION & DEVELOPMENT[J]. 2022, 33(11): 1944-1953, http://dx.doi.org/10.1002/ldr.4275.
[20] Liu, Ming, Zhang, Randi, Ma, Yanping, Han, Mingyang, Solan, Gregory A, Yang, Wenhong, Liang, Tongling, Sun, WenHua. Trifluoromethoxy-substituted nickel catalysts for producing highly branched polyethylenes: impact of solvent, activator and N,N '-ligand on polymer properties. POLYMER CHEMISTRY[J]. 2022, 13(8): 1040-1058, http://dx.doi.org/10.1039/d1py01637g.
[21] Che, Zhigang, Liu, Ming, Li, Fengchao, Shi, Yanbin, Zhou, Yurong, Zhou, Yuqin, Liu, Fengzhen. Reactive thermal evaporated amorphous tin oxide fabricated at room temperature and application in perovskite solar cells. PROGRESS IN PHOTOVOLTAICS[J]. 2022, 30(4): 339-348, http://dx.doi.org/10.1002/pip.3487.
[22] Yang Lulu, Xu Hongbo, Zhang Hainan, Chen Yiyu, Liu Ming, Tian Changqing. Numerical and Experimental Investigation on the Performance of Battery Thermal Management System Based on Micro Heat Pipe Array. JOURNAL OF THERMAL SCIENCE[J]. 2022, 31(5): 1531-1541, http://lib.cqvip.com/Qikan/Article/Detail?id=7108042909.
[23] Sun, Mingqi, Meng, Jiaqi, Bao, Weier, Liu, Ming, Li, Xiaojuan, Wang, Zicheng, Ma, Zhecheng, Wang, Xuefei, Tian, Zhiyuan. Composite Mesoporous Silica Nanoparticles with Dual-color Afterglow for Cross-correlation-based Living Cell Imaging. CHEMPHYSCHEM. 2022, [24] Duan, Xinlv, Huang, Kailiang, Feng, Junxiao, Niu, Jiebin, Qin, Haibo, Yin, Shihui, Jiao, Guangfan, Leonelli, Daniele, Zhao, Xiaoxuan, Wang, Zhaogui, Jing, Weiliang, Wang, Zhengbo, Wu, Ying, Xu, Jeffrey, Chen, Qian, Chuai, Xichen, Lu, Congyan, Wang, Wenwu, Yang, Guanhua, Geng, Di, Li, Ling, Liu, Ming. Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F(2) by Monolithic Stacking. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2022, 69(4): 2196-2202, http://dx.doi.org/10.1109/TED.2022.3154693.
[25] Shijie Huang, Zhenghua Wu, Haoqing Xu, Jingrui Guo, Lihua Xu, XinLv Duan, Qian Chen, Guanhua Yang, Qingzhu Zhang, Huaxiang Yin, 汪令飞, Ling Li, Ming Liu. Geometric Variability Aware Quantum Potential based Quasi-ballistic Compact Model for Stacked 6 nm-Thick Silicon Nanosheet GAA-FETs. IEEE International Electron Devices Meeting (IEDM)null. 2021, [26] 丁庆婷, 蒋海军, 李憬, 刘超, 余杰, 陈佩, 赵昱霖, 丁亚欣, 龚天城, 杨建国, 罗庆, 刘琦, 吕杭炳, 刘明. Unified 0.75pJ/Bit TRNG and Attack Resilient 2F2/Bit PUF for Robust Hardware Security Solutions with 4-layer Stacking 3D NbOx Threshold Switching Array. 2021 IEEE International Electron Devices Meeting (IEDM)null. 2021, [27] Jingrui Guo, Kaizhen Han, Subhali Subhechha, Xinlv Duan, Qian Chen, Di Geng, Shijie Huang, Lihua Xu, Junjie An, Gouri Sankar Kar, Xiao Gong, 汪令飞, Ling Li, Ming Liu. A new surface potential and physics based compact model for a-IGZO TFTs at multinanoscale for high retention and low-power DRAM application. IEEE International Electron Devices Meeting (IEDM)null. 2021, [28] Liu, Siyuan, Liu, Ming, Guo, Mingming, Wang, Zicheng, Wang, Xuefei, Cui, Wei, Tian, Zhiyuan. Development of Eu-based metal-organic frameworks (MOFs) for luminescence sensing and entrapping of arsenate ion. JOURNAL OF LUMINESCENCE[J]. 2021, 236: http://dx.doi.org/10.1016/j.jlumin.2021.118102.
[29] Wu, Meng, Li, Guilong, Wei, Shiping, Li, Pengfa, Liu, Ming, Liu, Jia, Li, Zhongpei. Discrimination of soil productivity and fertilizer-nitrogen use efficiency in the paddy field of subtropical China after 27 years different fertilizations. ARCHIVES OF AGRONOMY AND SOIL SCIENCE[J]. 2021, 67(2): 166-178, http://dx.doi.org/10.1080/03650340.2020.1718114.
[30] Xu, XiaoXin, Luo, Qing, Gong, TianCheng, Lv, HangBing, Liu, Qi, Liu, Ming. Resistive switching memory for high density storage and computing*. CHINESE PHYSICS B[J]. 2021, 30(5): 26-51, http://dx.doi.org/10.1088/1674-1056/abe0c4.
[31] Guo, Jingrui, Zhao, Ying, Yang, Guanhua, Chuai, Xichen, Lu, Wenhao, Liu, Dongyang, Chen, Qian, Duan, Xinlv, Huang, Shijie, Su, Yue, Geng, Di, Lu, Nianduan, Cui, Tao, Jang, Jin, Li, Ling, Liu, Ming. Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(4): 2049-2055, http://dx.doi.org/10.1109/TED.2021.3054359.
[32] 窦春萌, 许晓欣, 张续猛, 王琳方, 叶望, 安俊杰, 杨建国, 罗庆, 时拓, 刘璟, 尚大山, 张峰, 刘琦, 刘明. Enabling RRAM-Based Brain-Inspired Computation by Co-design of Device, Circuit, and System. IEDMnull. 2021, [33] Zhongzhong Luo, Boyu Peng, Junpeng Zeng, Zhihao Yu, Ying Zhao, Jun Xie, Rongfang Lan, Zhong Ma, Lijia Pan, Ke Cao, Yang Lu, Daowei He, Hongkai Ning, Wanqing Meng, Yang Yang, Xiaoqing Chen, Weisheng Li, Jiawei Wang, Danfeng Pan, Xuecou Tu, Wenxing Huo, Xian Huang, Dongquan Shi, Ling Li, Ming Liu, Yi Shi, Xue Feng, Paddy K L Chan, Xinran Wang. Sub-thermionic, ultra-high-gain organic transistors and circuits. NATURE COMMUNICATIONS[J]. 2021, 12(1): https://doaj.org/article/c28cfc85934841b4bb20c0a57d71d439.
[34] Li, Zefeng, Xue, Xiaojuan, Li, Xiaoyan, Bao, Xiaohua, Yu, Sifang, Wang, Zengjian, Liu, Ming, Ma, Hailin, Zhang, Delong. Neuropsychological effect of working memory capacity on mental rotation under hypoxia environment. INTERNATIONAL JOURNAL OF PSYCHOPHYSIOLOGY[J]. 2021, 165: 18-28, http://dx.doi.org/10.1016/j.ijpsycho.2021.03.012.
[35] MA Xinling, LIU Jia, CHEN Xiaofen, LI Weitao, JIANG Chunyu, WU Meng, LIU Ming, LI Zhongpei. Bacterial diversity and community composition changes in paddy soils that have different parent materials and fertility levels. JOURNAL OF INTEGRATIVE AGRICULTURE[J]. 2021, 20(10): 2797-2806, http://dx.doi.org/10.1016/S2095-3119(20)63364-0.
[36] Zhou, Zheng, Wang, Jiawei, Chen, Jiezhi, Jiang, Chao, Li, Ling, Liu, Ming. Directly probing the charge transport in initial molecular layers of organic polycrystalline field effect transistors. JOURNAL OF MATERIALS CHEMISTRY C[J]. 2021, 9(2): 649-656, http://dx.doi.org/10.1039/d0tc04526h.
[37] Zhang, Kaiquan, Meng, Jiaqi, Bao, Weier, Liu, Ming, Wang, Xuefei, Tian, Zhiyuan. Mitochondrion-targeting near-infrared fluorescent probe for detecting intracellular nanomolar level hydrogen sulfide with high recognition rate. ANALYTICAL AND BIOANALYTICAL CHEMISTRY[J]. 2021, 413(4): 1215-1224, https://www.webofscience.com/wos/woscc/full-record/WOS:000604333000003.
[38] Wang, Linfang, 窦春萌, Ye, Wang, Lai, jinru, Liu, Jing, Yang, Jianguo, Si, X, Huo, Changxing, 许晓欣, Liu, Qi, 尚大山, Liu, Ming. A 14 nm 100Kb 2T2R transpose RRAM with >150X resistance ratio enhancement and 27.95% reduction on energy-latency product using low-power near threshold read operation and fast data-line current stabling scheme. IEEE Symposium on VLSI Technology[J]. 2021, [39] Ying Zhao, 汪令飞, Zhenhua Wu, Franz Schanovsky, 许晓欣, Hong Yang, Lai, jinru, Donyang Liu, Xichen Chuai, Yue Su, Xingsheng Wang, Ling Li, Ming Liu. A Unified Physical BTI Compact Model in Variability-Aware DTCO Flow: Device Characterization and Circuit Evaluation on Reliability of Scaling Technology Nodes. Symposium on VLSI Technology,null. 2021, [40] Wang, Yibo, Li, Junchao, Wang, Zengjian, Liang, Bishan, Jiao, Bingqing, Zhang, Peng, Huang, Yingying, Yang, Hui, Yu, Rengui, Yu, Sifang, Zhang, Delong, Liu, Ming. Spontaneous Activity in Primary Visual Cortex Relates to Visual Creativity. FRONTIERS IN HUMAN NEUROSCIENCE[J]. 2021, 15: https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8046910/.
[41] He, Zhoutong, Zhang, Can, Tang, Hui, Liu, Ming, Marsden, Barry J, Zhou, Xingtai. Microstructure characterization of IG110 and reactor pebble graphite using synchrotron micro X-ray diffraction 2D maps. SURFACE AND INTERFACE ANALYSIS[J]. 2021, 53(1): 90-99, https://www.webofscience.com/wos/woscc/full-record/WOS:000572087100001.
[42] 刘明. 纪念《真空科学与技术学报》创刊40周年寄语. 真空科学与技术学报[J]. 2021, 41(1): I0003-I0003, http://lib.cqvip.com/Qikan/Article/Detail?id=7104242275.
[43] Yu, Jie, 李熠, Sun, Wenxuan, 张握瑜, 许晓欣, 尚大山, Liu, Ming. Energy efficient and robust reservoir computing system using ultrathin (3.5 nm) ferroelectric tunneling junctions for temporal data learning. IEEE Symposium on VLSI Technologynull. 2021, [44] Zhou, Keji, Xue, Xiaoyong, Yang, Jianguo, Xu, Xiaoxin, Lv, Hangbing, Jing, Minge, Li, Jing, Zeng, Xiaoyang, Liu, Ming. High-Density 3-D Stackable Crossbar 2D2R nvTCAM With Low-Power Intelligent Search for Fast Packet Forwarding in 5G Applications. IEEE JOURNAL OF SOLID-STATE CIRCUITS[J]. 2021, 56(3): 988-1000, http://dx.doi.org/10.1109/JSSC.2020.3025756.
[45] Wang, Jianjian, Bi, Jinshun, Liu, Gang, Bai, Hua, Xi, Kai, Li, Bo, Majumdar, Sandip, Ji, Lanlong, Liu, Ming, Zhang, Zhangang. Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design. SCIENCE CHINA-INFORMATION SCIENCESnull. 2021, 64(4): 234-236, https://www.sciengine.com/doi/10.1007/s11432-019-2854-9.
[46] Li, Mengmeng, Wang, Jiawei, Xu, Wanzhen, Li, Ling, Pisula, Wojciech, Janssen, Rene A J, Liu, Ming. Noncovalent semiconducting polymer monolayers for high-performance field-effect transistors. PROGRESS IN POLYMER SCIENCEnull. 2021, 117: http://dx.doi.org/10.1016/j.progpolymsci.2021.101394.
[47] 龚天成, 胡乔, 张栋林, 蒋海军, 杨建国, 许晓欣, 罗庆, 刘琦, 吕杭炳, 刘明. A 128kb Stochastic Computing Chip based on RRAM Flicker Noise with High Noise Density and Nearly Zero Autocorrelation on 28-nm CMOS Platform. 2021 IEEE International Electron Devices Meeting (IEDM)null. 2021, [48] Li, Tao, Yin, Yibo, Ma, Kainan, Zhang, Sitao, Liu, Ming. Lightweight End-to-End Neural Network Model for Automatic Heart Sound Classification. INFORMATION[J]. 2021, 12(2): http://dx.doi.org/10.3390/info12020054.
[49] Li, Pengfa, Liu, Ming, Li, Guilong, Liu, Kai, Liu, Tianshun, Wu, Meng, Saleem, Muhammad, Li, Zhongpei. Phosphorus availability increases pathobiome abundance and invasion of rhizosphere microbial networks by Ralstonia. ENVIRONMENTAL MICROBIOLOGY[J]. 2021, 23(10): 5992-6003, http://dx.doi.org/10.1111/1462-2920.15696.
[50] Jiawei Wang, Jiebin Niu, Bin Shao, Guanhua Yang, Congyan Lu, Mengmeng Li, Zheng Zhou, Xichen Chuai, Jiezhi Chen, Nianduan Lu, Bing Huang, Yeliang Wang, Ling Li, Ming Liu. A tied Fermi liquid to Luttinger liquid model for nonlinear transport in conducting polymers. NATURE COMMUNICATIONS[J]. 2021, 12(1): http://dx.doi.org/10.1038/s41467-020-20238-5.
[51] 刘孟淦, 陆丛研, 杨冠华, Weizhuo Gan, 彭松昂, zhenhua wu, Jiebin Niu, Jiawei Wang, 汪令飞, Mengmeng Li, Di Geng, 卢年端, Wei Cao, Deji Akinwande, Ling Li, Ming Liu. Analog Monolayer MoS2 Transistor with Record-high Intrinsic Gain (> 100 dB) and Ultra-low Saturation Voltage (< 0.1 V) by Source Engineering. 2021 Symposium on VLSI Technologynull. 2021, [52] Wei, Shiping, Li, Guilong, Li, Pengfa, Qiu, Cunpu, Jiang, Chunyu, Liu, Ming, Wu, Meng, Li, Zhongpei. Molecular level changes during suppression of Rhizoctonia solani growth by humic substances and relationships with chemical structure. ECOTOXICOLOGY AND ENVIRONMENTAL SAFETY[J]. 2021, 209: https://www.webofscience.com/wos/woscc/full-record/WOS:000611821300003.
[53] Gong, Tiancheng, Dong, Danian, Luo, Qing, Xu, Xiaoxin, Yang, Jianguo, Yu, Jie, Ding, Qingting, Lv, Hangbing, Liu, Ming. Quantitative Analysis on Resistance Fluctuation of Resistive Random Access Memory by Low Frequency Noise Measurement. IEEE ELECTRON DEVICE LETTERS[J]. 2021, 42(3): 312-314, https://www.webofscience.com/wos/woscc/full-record/WOS:000622098100004.
[54] Bao, Weier, Liu, Ming, Meng, Jiaqi, Liu, Siyuan, Wang, Shuang, Jia, Rongrong, Wang, Yugang, Ma, Guanghui, Wei, Wei, Tian, Zhiyuan. MOFs-based nanoagent enables dual mitochondrial damage in synergistic antitumor therapy via oxidative stress and calcium overload. NATURE COMMUNICATIONS[J]. 2021, 12(1): http://dx.doi.org/10.1038/s41467-021-26655-4.
[55] Huo, Qiang, Liu, Ming, Song, Renjun, Lei, Dengyun, Luo, Qing, Wu, Zhenhua, Wu, Zuheng, Zhao, Xiaojin, Zhang, Feng, Li, Ling. Demonstration of 3D Convolution Kernel Function Based on 8-Layer 3D Vertical Resistive Random Access Memory. IEEE ELECTRON DEVICE LETTERS[J]. 2020, 41(3): 497-500, http://dx.doi.org/10.1109/LED.2020.2970536.
[56] Zhao, Xiaolong, Niu, Jiebin, Yang, Yang, Xiao, Xiangheng, Chen, Rui, Wu, Zuheng, Zhang, Ying, Lv, Hangbing, Long, Shibing, Liu, Qi, Jiang, Changzhong, Liu, Ming. Modulating the filament rupture degree of threshold switching device for self-selective and low-current nonvolatile memory application. NANOTECHNOLOGY[J]. 2020, 31(14): http://dx.doi.org/10.1088/1361-6528/ab647d.
[57] Yang, Jianguo, Ding, Qingting, Gong, Tiancheng, Luo, Qing, Xue, Xiaoyong, Gao, Zhaomeng, Yu, Haoran, Yu, Jie, Xu, Xiaoxin, Yuan, Peng, Li, Xiaoyan, Tai, Lu, Chung, Steve S, Lv, Hangbing, Liu, Ming, IEEE. Robust True Random Number Generator Using Stochastic Short-term Recovery of Charge Trapping FinFET for Advanced Hardware Security. 2020 IEEE SYMPOSIUM ON VLSI TECHNOLOGYnull. 2020, [58] Wei, Shiping, Wu, Meng, Li, Guilong, Li, Pengfa, Qiu, Cunpu, Jiang, Chunyu, Liu, Ming, Li, Zhongpei. Active chemical fractions with high fungistatic activity of humic-like substances obtained via different extraction solvents. JOURNAL OF CHEMICAL TECHNOLOGY AND BIOTECHNOLOGY[J]. 2020, 95(3): 585-593, https://www.webofscience.com/wos/woscc/full-record/WOS:000498453200001.
[59] Pengfa Li, Weitao Li, Alex J Dumbrell, Ming Liu, Guilong Li, Meng Wu, Chunyu Jiang, Zhongpei Li. Spatial Variation in Soil Fungal Communities across Paddy Fields in Subtropical China. MSYSTEMS[J]. 2020, 5(1): https://doaj.org/article/cbd60e28860c4a1d8833ad8ac31cb45f.
[60] Liu, Chao, Yang, Jianguo, Jiang, Pengfei, Wang, Qiao, Zhang, Donglin, Gong, Tiancheng, Ding, Qingting, Zhao, Yuling, Luo, Qing, Xue, Xiaoyong, Lv, Hangbing, Liu, Ming. A Low Power 4T2C nvSRAM With Dynamic Current Compensation Operation Scheme. IEEETRANSACTIONSONVERYLARGESCALEINTEGRATIONVLSISYSTEMS[J]. 2020, 28(11): 2469-2473, http://dx.doi.org/10.1109/TVLSI.2020.3019524.
[61] Chen, Xuhui, Hu, Huifang, Huang, Xiaoqing, Cai, Weiran, Liu, Ming, Lam, Chung, Lin, Xinnan, Zhang, Lining, Chan, Mansun. A SPICE Model of Phase Change Memory for Neuromorphic Circuits. IEEE ACCESS[J]. 2020, 8: 95278-95287, https://doaj.org/article/e9e47bcbf34941ffb31ace0fd0dba13f.
[62] Huo, Qiang, Wu, Zhenhua, Wang, Xingsheng, Huang, Weixing, Yao, Jiaxin, Bu, Jianhui, Zhang, Feng, Li, Ling, Liu, Ming. Physics-Based Device-Circuit Cooptimization Scheme for 7-nm Technology Node SRAM Design and Beyond. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2020, 67(3): 907-914, https://www.webofscience.com/wos/woscc/full-record/WOS:000519593800020.
[63] Li, Yue, Lu, Jikai, Shang, Dashan, Liu, Qi, Wu, Shuyu, Wu, Zuheng, Zhang, Xumeng, Yang, Jianguo, Wang, Zhongrui, Lv, Hangbing, Liu, Ming. Oxide-Based Electrolyte-Gated Transistors for Spatiotemporal Information Processing. ADVANCED MATERIALS[J]. 2020, 32(47): http://dx.doi.org/10.1002/adma.202003018.
[64] 刘凯, 刘佳, 陈晓芬, 李委涛, 江春玉, 吴萌, 樊剑波, 李忠佩, 刘明. 长期施用磷肥水稻土微生物量磷的季节变化特征与差异. 中国农业科学[J]. 2020, 53(7): 1411-1418, http://lib.cqvip.com/Qikan/Article/Detail?id=7101631859.
[65] Guo, Jingrui, Zhao, Ying, Yang, Guanhua, Chuai, Xichen, Lu, Wenhao, Liu, Dongyang, Chen, Qian, Duan, Xinlv, Huang, Shijie, Su, Yue, Geng, Di, Lu, Nianduan, Cui, Tao, Jang, Jin, Li, Ling, Liu, Ming, IEEE. A New Surface Potential Based Compact Model for Independent Dual Gate a-IGZO TFT: Experimental Verification and Circuit Demonstration. 2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)null. 2020, [66] Yang, Jianguo, Xue, Xiaoyong, Xu, Xiaoxin, Lv, Hangbing, Zhang, Feng, Zeng, Xiaoyang, Chang, MengFan, Liu, Ming, IEEE. A 28nm 1.5Mb Embedded 1T2R RRAM with 14.8 Mb/mm(2) Using Sneaking Current Suppression and Compensation Techniques. 2020 IEEE SYMPOSIUM ON VLSI CIRCUITSnull. 2020, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000621657500108.
[67] 卢建, 吴祖恒, 张续猛, 魏劲松, 方伊琳, 时拓, 刘琦, 伍法才, 刘明. Quantitatively Evaluating the Effect of Read Noise in Memristive Hopfield Network on Solving Travelling Salesman Problem. Ieee Electron Device Letters[J]. 2020, 41(11): 1688-1691, [68] Xumeng Zhang, Ye Zhuo, Qing Luo, Zuheng Wu, Rivu Midya, Zhongrui Wang, Wenhao Song, Rui Wang, Navnidhi K. Upadhyay, Yilin Fang, Fatemeh Kiani, Mingyi Rao, Yang Yang, Qiangfei Xia, Qi Liu, Ming Liu, J. Joshua Yang. An artificial spiking afferent nerve based on Mott memristors for neurorobotics. NATURE COMMUNICATIONS[J]. 2020, 11(1): 1-9, http://gooa.las.ac.cn/external/index?type=-1&pid=1562742.
[69] Zhang, Xumeng, Wu, Zuheng, Lu, Jikai, Wei, Jinsong, Lu, Jian, Zhu, Jiaxue, Qiu, Jie, Wang, Rui, Lou, Kaihua, Wang, Yongzhou, Shi, Tuo, Dou, Chunmeng, Shang, Dashan, Liu, Qi, Liu, Ming, IEEE. Fully Memristive SNNs with Temporal Coding for Fast and Low-power Edge Computing. 2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)null. 2020, [70] Shujing Jia, Huanglong Li, Tamihiro Gotoh, Christophe Longeaud, Bin Zhang, Juan Lyu, Shilong Lv, Min Zhu, Zhitang Song, Qi Liu, John Robertson, Ming Liu. Ultrahigh drive current and large selectivity in GeS selector. NATURE COMMUNICATIONS[J]. 2020, 11(1): http://dx.doi.org/10.1038/s41467-020-18382-z.
[71] Lv, Yuanjie, Zhou, Xingye, Long, Shibing, Wang, Yuangang, Song, Xubo, Zhou, Xuanze, Xu, Guangwei, Liang, Shixiong, Feng, Zhihong, Cai, Shujun, Fu, Xingchang, Pu, Aimin, Liu, Ming. Enhancement-Mode beta-Ga2O3 Metal-Oxide-Semiconductor Field-Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS[J]. 2020, 14(3): https://www.webofscience.com/wos/woscc/full-record/WOS:000503855000001.
[72] Wang, Kang, Xie, Yujun, Liu, Ming, Tao, Wei, Zhang, Hao, Huang, Meidong, You, Jinmao, Liu, Ying, Li, Yunliang, Li, Zhen, Dong, Yong Qiang. High-Contrast Polymorphic Luminogen Formed through Effect of Tiny Differences in Intermolecular Interactions on the Intramolecular Charge Transfer Process. ADVANCED OPTICAL MATERIALS[J]. 2020, 8(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000535055000001.
[73] Wu, Zuheng, Lu, Jikai, Shi, Tuo, Zhao, Xiaolong, Zhang, Xumeng, Yang, Yang, Wu, Facai, Li, Yue, Liu, Qi, Liu, Ming. A Habituation Sensory Nervous System with Memristors. ADVANCED MATERIALS[J]. 2020, 32(46): http://dx.doi.org/10.1002/adma.202004398.
[74] Wang, Yuangang, Cai, Shujun, Liu, Ming, Lv, Yuanjie, Long, Shibing, Zhou, Xingye, Song, Xubo, Liang, Shixiong, Han, Tingting, Tan, Xin, Feng, Zhihong. High-Voltage ((2)over-bar01) beta-Ga2O3 Vertical Schottky Barrier Diode With Thermally-Oxidized Termination. IEEE ELECTRON DEVICE LETTERS[J]. 2020, 41(1): 131-134, http://dx.doi.org/10.1109/LED.2019.2956016.
[75] Cheng, Lin, Ge, Xinyuan, Ng, Wai Chiu, Ki, WingHung, Zheng, Jiawei, Kwok, Tsz Fai, Tsui, ChiYing, Liu, Ming. A 6.78-MHz Single-Stage Wireless Charger With Constant-Current Constant-Voltage Charging Technique. IEEE JOURNAL OF SOLID-STATE CIRCUITS[J]. 2020, 55(4): 999-1010, https://www.webofscience.com/wos/woscc/full-record/WOS:000522446300016.
[76] Liu Ming, Zhang Haiyang, Shu Hang, Yin Chongxian, Zhao Liying, Ouyang Lianhua, Li Rui, Tan Songqing, Wang Zhishan, Du Hanwen, Zhang Haiqun, Zhang Manzhou, Chu Kecheng, Dai Xiaolei. Technical commissioning of the spot scanning system in Shanghai Proton Therapy Facility. 辐射探测技术与方法(英文)[J]. 2020, 46-55, http://lib.cqvip.com/Qikan/Article/Detail?id=00004H0G4H9XFFCD5D88CH50MPD89JP16PDO2.
[77] Huo, Qiang, Wu, Zhenhua, Huang, Weixing, Wang, Xingsheng, Tang, Geyu, Yao, Jiaxin, Liu, Yongpan, Zhao, Xiaojin, Zhang, Feng, Li, Ling, Liu, Ming. A Novel General Compact Model Approach for 7-nm Technology Node Circuit Optimization From Device Perspective and Beyond. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY[J]. 2020, 8(1): 295-301, https://doaj.org/article/58ccda7a8f744d05b568c35bd909bf77.
[78] Qin, Yuan, Li, Liheng, Zhao, Xiaolong, Tompa, Gary S, Dong, Hang, Jian, Guangzhong, He, Qiming, Tan, Pengju, Hou, Xiaohu, Zhang, Zhongfang, Yu, Shunjie, Sun, Haiding, Xu, Guangwei, Miao, Xiangshui, Xue, Kanhao, Long, Shibing, Liu, Ming. Metal-Semiconductor-Metal epsilon-Ga2O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism. ACS PHOTONICS[J]. 2020, 7(3): 812-820, http://dx.doi.org/10.1021/acsphotonics.9b01727.
[79] Hu, Huifang, Liu, Dayong, Chen, Xuhui, Dong, Deqi, Cui, Xiaole, Liu, Ming, Lin, Xinnan, Zhang, Lining, Chan, Mansun. A Compact Phase Change Memory Model With Dynamic State Variables. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2020, 67(1): 133-139, http://dx.doi.org/10.1109/TED.2019.2956193.
[80] Yin, Yibo, Ma, Kainan, Liu, Ming. Temporal Convolutional Network Connected with an Anti-Arrhythmia Hidden Semi-Markov Model for Heart Sound Segmentation. APPLIED SCIENCES-BASEL[J]. 2020, 10(20): http://dx.doi.org/10.3390/app10207049.
[81] Shi, Xuewen, Lu, Congyan, Duan, Xinlv, Chen, Qian, Ji, Hansai, Su, Yue, Chuai, Xichen, Liu, Dongyang, Zhao, Ying, Yang, Guanhua, Wang, Jiawei, Lu, Nianduan, Geng, Di, Li, Ling, Liu, Ming. Study of Positive-Gate-Bias-Induced Hump Phenomenon in Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2020, 67(4): 1606-1612, https://www.webofscience.com/wos/woscc/full-record/WOS:000522559000033.
[82] Yang, GuanHua, Wang, JiaWei, Niu, JieBin, Chuai, XiChen, Lu, CongYan, Geng, Di, Lu, NianDuan, Li, Ling, Liu, Ming. Investigation of positive bias temperature instability for monolayer polycrystalline MoS2 field-effect transistors. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY[J]. 2020, 63(1): 126-129, http://lib.cqvip.com/Qikan/Article/Detail?id=7100982446.
[83] Guanhua Yang, Yan Shao, Jiebin Niu, Xiaolei Ma, Congyan Lu, Wei Wei, Xichen Chuai, Jiawei Wang, Jingchen Cao, Hao Huang, Guangwei Xu, Xuewen Shi, Zhuoyu Ji, Nianduan Lu, Di Geng, Jing Qi, Yun Cao, Zhongliu Liu, Liwei Liu, Yuan Huang, Lei Liao, Weiqi Dang, Zhengwei Zhang, Yuan Liu, Xidong Duan, Jiezhi Chen, Zhiqiang Fan, Xiangwei Jiang, Yeliang Wang, Ling Li, HongJun Gao, Xiangfeng Duan, Ming Liu. Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals. NATURE COMMUNICATIONS[J]. 2020, 11(1): 1-7, http://gooa.las.ac.cn/external/index?type=-1&pid=1568067.
[84] Luqi Tu, Rongrong Cao, Xudong Wang, Yan Chen, Shuaiqin Wu, Fang Wang, Zhen Wang, Hong Shen, Tie Lin, Peng Zhou, Xiangjian Meng, Weida Hu, Qi Liu, Jianlu Wang, Ming Liu, Junhao Chu. Ultrasensitive negative capacitance phototransistors. NATURE COMMUNICATIONS[J]. 2020, 11(1): 1-8, https://doaj.org/article/91e97539611e4b04ad2a7430b9a9453a.
[85] Ma, Kainan, Liu, Ming, Li, Tao, Yin, Yibo, Chen, Hongda. A Low-Cost Improved Method of Raw Bit Error Rate Estimation for NAND Flash Memory of High Storage Density. ELECTRONICS[J]. 2020, 9(11): https://doaj.org/article/182b10c88af04bd8b7f2a356ec65d111.
[86] Xu, Xiaoxin, Yu, Jie, Gong, Tiancheng, Yang, Jianguo, Yin, Jiahao, Dong, Da Nian, Luo, Qing, Liu, Jing, Yu, Zhaoan, Liu, Qi, Lv, Hangbing, Liu, Ming, IEEE. First Demonstration of OxRRAM Integration on 14nm FinFet Platform and Scaling Potential Analysis towards Sub-10nm Node. 2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)null. 2020, [87] Qing Luo, Yan Cheng, Jianguo Yang, Rongrong Cao, Haili Ma, Yang Yang, Rong Huang, Wei Wei, Yonghui Zheng, Tiancheng Gong, Jie Yu, Xiaoxin Xu, Peng Yuan, Xiaoyan Li, Lu Tai, Haoran Yu, Dashan Shang, Qi Liu, Bing Yu, Qiwei Ren, Hangbing Lv, Ming Liu. A highly CMOS compatible hafnia-based ferroelectric diode. NATURE COMMUNICATIONS[J]. 2020, 11(1): https://doaj.org/article/c59ff6c19c2849768da9016b0a30f359.
[88] Liu, Chunsen, Chen, Huawei, Wang, Shuiyuan, Liu, Qi, Jiang, YuGang, Zhang, David Wei, Liu, Ming, Zhou, Peng. Two-dimensional materials for next-generation computing technologies. NATURE NANOTECHNOLOGYnull. 2020, 15(7): 545-557, https://www.webofscience.com/wos/woscc/full-record/WOS:000546729400009.
[89] Li, Pengfa, Liu, Ming, Ma, Xiaoyan, Wu, Meng, Jiang, Chunyu, Liu, Kai, Liu, Jia, Li, Zhongpei. Responses of microbial communities to a gradient of pig manure amendment in red paddy soils. SCIENCE OF THE TOTAL ENVIRONMENT[J]. 2020, 705: http://dx.doi.org/10.1016/j.scitotenv.2019.135884.
[90] Xi, Kai, Bi, Jinshun, Chu, Jiamin, Xu, Gaobo, Li, Bo, Wang, Haibin, Liu, Ming, Sandip, Majumdar. Total ionization dose effects of N-type tunnel field effect transistor (TFET) with ultra-shallow pocket junction. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING[J]. 2020, 126(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000537110800004.
[91] Fan, LinJie, Bi, JinShun, Xu, YanNan, Xi, Kai, Ma, Yao, Liu, Ming, Majumdar, Sandip. Cryogenic characterisation of 55 nm SONOS charge-trapping memory in AC and DC modes. ELECTRONICS LETTERS[J]. 2020, 56(4): 199-+, https://www.webofscience.com/wos/woscc/full-record/WOS:000515723000015.
[92] He, Xiaodong, Tang, Zifan, Liang, Shengfa, Liu, Ming, Guan, Weihua. Confocal scanning photoluminescence for mapping electron and photon beam induced microscopic changes in SiNx during nanopore fabrication (vol 31, 395202, 2020). NANOTECHNOLOGYnull. 2020, 31(50): https://www.webofscience.com/wos/woscc/full-record/WOS:000575676100001.
[93] He, Xiaodong, Tang, Zifan, Liang, Shengfa, Liu, Ming, Guan, Weihua. Confocal scanning photoluminescence for mapping electron and photon beam-induced microscopic changes in SiN(x)during nanopore fabrication. NANOTECHNOLOGY[J]. 2020, 31(39): https://www.webofscience.com/wos/woscc/full-record/WOS:000552683600001.
[94] Lanza, Mario, Wong, HS Philip, Pop, Eric, Ielmini, Daniele, Strukov, Dimitri, Regan, Brian C, Larcher, Luca, Villena, Marco A, Yang, J Joshua, Goux, Ludovic, Belmonte, Attilio, Yang, Yuchao, Puglisi, Francesco M, Kang, Jinfeng, MagyariKope, Blanka, Yalon, Eilam, Kenyon, Anthony, Buckwell, Mark, Mehonic, Adnan, Shluger, Alexander, Li, Haitong, Hou, TuoHung, Hudec, Boris, Akinwande, Deji, Ge, Ruijing, Ambrogio, Stefano, Roldan, Juan B, Miranda, Enrique, Sune, Jordi, Pey, Kin Leong, Wu, Xing, Raghavan, Nagarajan, Wu, Ernest, Lu, Wei D, Navarro, Gabriele, Zhang, Weidong, Wu, Huaqiang, Li, Runwei, Holleitner, Alexander, Wurstbauer, Ursula, Lemme, Max C, Liu, Ming, Long, Shibing, Liu, Qi, Lv, Hangbing, Padovani, Andrea, Pavan, Paolo, Valov, Ilia, Jing, Xu, Han, Tingting, Zhu, Kaichen, Chen, Shaochuan, Hui, Fei, Shi, Yuanyuan. Recommended Methods to Study Resistive Switching Devices. ADVANCED ELECTRONIC MATERIALS[J]. 2019, 5(1): https://www.webofscience.com/wos/woscc/full-record/WOS:000455220900021.
[95] Hang Shu, Chongxian Yin, Haiyang Zhang, Ming Liu, Manzhou Zhang, Liying Zhao, Kecheng Chu, Xiaolei Dai, Michael F Moyers. Scanned Proton Beam Performance and Calibration of the Shanghai Advanced Proton Therapy Facility. METHODSX[J]. 2019, 6: 1933-1943, http://dx.doi.org/10.1016/j.mex.2019.08.001.
[96] Luo, Qing, Zhang, Xumeng, Yu, Jie, Wang, Wei, Gong, Tiancheng, Xu, Xiaoxin, Yin, Jiahao, Yuan, Peng, Tai, Lu, Dong, Danian, Lv, Hangbing, Long, Shibing, Liu, Qi, Liu, Ming. Memory Switching and Threshold Switching in a 3D Nanoscaled NbOX System. IEEE ELECTRON DEVICE LETTERS[J]. 2019, 40(5): 718-721, http://dx.doi.org/10.1109/LED.2019.2904279.
[97] Zhang, Xumeng, Wang, Zhongrui, Song, Wenhao, Midya, Rivu, Zhuo, Ye, Wang, Rui, Rao, Mingyi, Upadhyay, Navnidhi K, Xia, Qiangfei, Yang, J Joshua, Liu, Qi, Liu, Ming, IEEE. Experimental Demonstration of Conversion-Based SNNs with 1T1R Mott Neurons for Neuromorphic Inference. 2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)null. 2019, [98] Cao Yang, Xi Kai, Xu YanNan, Li Mei, Li Bo, Bi JinShun, Liu Ming. Total ionizing dose effects of gamma and X-rays on 55 nm silicon-oxide-nitride-oxide-silicon single flash memory cell. ACTA PHYSICA SINICA[J]. 2019, 68(3): http://dx.doi.org/10.7498/aps.68.20181661.
[99] 魏世平, 吴萌, 李桂龙, 江春玉, 刘明, 陈瑞蕊, 李忠佩. 腐殖酸对低浓度百菌清的缓释增效作用. 中国农业科学[J]. 2019, 52(1): 65-72, https://kns.cnki.net/KCMS/detail/detail.aspx?dbcode=CJFQ&dbname=CJFDLAST2019&filename=ZNYK201901007&v=MjgxMTVUcldNMUZyQ1VSN3FlWitSdkZpbmdWYnJNUHlQU1piRzRIOWpNcm85Rlk0UjhlWDFMdXhZUzdEaDFUM3E=.
[100] Dong, Hang, Long, Shibing, Sun, Haiding, Zhao, Xiaolong, He, Qiming, Qin, Yuan, Jian, Guangzhong, Zhou, Xuanze, Yu, Yangtong, Guo, Wei, Xiong, Wenhao, Hao, Weibing, Zhang, Ying, Xue, Huiwen, Xiang, Xueqiang, Yu, Zhaoan, Lv, Hangbing, Liu, Qi, Liu, Ming. Fast Switching beta-Ga2O3 Power MOSFET With a Trench-Gate Structure. IEEE ELECTRON DEVICE LETTERS[J]. 2019, 40(9): 1385-1388, http://dx.doi.org/10.1109/LED.2019.2926202.
[101] 郝跃, 刘明, 周益春. 低维铁电材料与器件. 湘潭大学学报:自然科学版[J]. 2019, 41(5): I0002-I0002, http://lib.cqvip.com/Qikan/Article/Detail?id=7100750036.
[102] 刘明. 半导体存储器技术. 科技导报[J]. 2019, 62-65, http://lib.cqvip.com/Qikan/Article/Detail?id=75746866504849574851484949.
[103] Liu, Ming, Meng, Jiaqi, Bao, Weier, Liu, Siyuan, Wei, Wei, Ma, Guanghui, Tian, Zhiyuan. Single-Chromophore-Based Therapeutic Agent Enables Green-Light-Triggered Chemotherapy and Simultaneous Photodynamic Therapy to Cancer Cells. ACS APPLIED BIO MATERIALS[J]. 2019, 2(7): 3068-3076, [104] Li, Pengfa, Liu, Jia, Jiang, Chunyu, Wu, Meng, Liu, Ming, Li, Zhongpei. Distinct Successions of Common and Rare Bacteria in Soil Under Humic Acid Amendment - A Microcosm Study. FRONTIERS IN MICROBIOLOGY[J]. 2019, 10: https://doaj.org/article/30a55d63166647eba607490f1935df95.
[105] Wang, Wei, Wang, Rui, Shi, Tuo, Wei, Jinsong, Cao, Rongrong, Zhao, Xiaolong, Wu, Zuheng, Zhang, Xumeng, Lu, Jian, Xu, Hui, Li, Qingjiang, Liu, Qi, Liu, Ming. A Self-Rectification and Quasi-Linear Analogue Memristor for Artificial Neural Networks. IEEE ELECTRON DEVICE LETTERS[J]. 2019, 40(9): 1407-1410, https://www.webofscience.com/wos/woscc/full-record/WOS:000576774200001.
[106] Lu, Nianduan, Wang, Jiawei, Geng, Di, Li, Ling, Liu, Ming. Understanding the transport mechanism of organic-inorganic perovskite solar cells: The effect of exciton or free-charge on diffusion length. ORGANIC ELECTRONICS[J]. 2019, 66: 163-168, http://dx.doi.org/10.1016/j.orgel.2018.12.007.
[107] Wang, Yiming, Li, Yun, Shen, Haihua, Fan, Dongyu, Wang, Wei, Li, Ling, Liu, Qi, Zhang, Feng, Wang, Xinghua, Chang, MengFan, Liu, Ming. A Few-Step and Low-Cost Memristor Logic Based on MIG Logic for Frequent-Off Instant-On Circuits in IoT Applications. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS[J]. 2019, 66(4): 662-666, [108] Yu Jie, Xu Xiaoxin, Gong Tiancheng, Luo Qing, Tai Lu, Li Xiaoyan, Yuan Peng, Dong Danian, Yin Jiahao, Ding Qingting, Lv Hangbing, Liu Ming, IEEE. Uniformity and Endurance Enhancement of Valance Changed Resistive Switching Memory (VCM) by a New Pulse Method. 2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)null. 2019, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000483036000027.
[109] Zhang, Wenchang, Hu, Yuan, Choi, Gihoon, Liang, Shengfa, Liu, Ming, Guan, Weihua. Microfluidic multiple cross-correlated Coulter counter for improved particle size analysis. SENSORS AND ACTUATORS B-CHEMICAL[J]. 2019, 296: http://dx.doi.org/10.1016/j.snb.2019.05.092.
[110] Yin, Jiahao, Dou, Chunmeng, Dong, Danian, Yu, Jie, Xu, Xiaoxin, Luo, Qing, Gong, Tiancheng, Tai, Lu, Yuan, Peng, Xue, Xiaoyong, Liu, Ming, Lv, Hangbing. A 0.75V reference clamping sense amplifier for low-power high-density ReRAM with dynamic pre-charge technique. IEICE ELECTRONICS EXPRESS[J]. 2019, 16(12): http://dx.doi.org/10.1587/elex.16.20190201.
[111] Xu, Yannan, Bi, Jinshun, Li, Yudong, Xi, Kai, Fan, Linjie, Liu, Ming, Sandip, M, Luo, Li. The total ionizing dose effects of X-ray irradiation on graphene/Si Schottky diodes with a HfO2 insertion layer. MICROELECTRONICS RELIABILITY[J]. 2019, 100: http://dx.doi.org/10.1016/j.microrel.2019.06.047.
[112] Qiu, Cunpu, Feng, Youzhi, Wu, Meng, Liu, Ming, Li, Weitao, Li, Zhongpei. NanoFe(3)O(4) accelerates methanogenic straw degradation by improving energy metabolism. BIORESOURCE TECHNOLOGY[J]. 2019, 292: http://dx.doi.org/10.1016/j.biortech.2019.121930.
[113] Qin, Yuan, Dong, Hang, Long, Shibing, He, Qiming, Jian, Guangzhong, Zhang, Ying, Zhou, Xuanze, Yu, Yangtong, Hou, Xiaohu, Tan, Pengju, Zhang, Zhongfang, Liu, Qi, Lv, Hangbing, Liu, Ming. Enhancement-Mode beta-Ga2O3 Metal-Oxide-Semiconductor Field-Effect Solar-Blind Phototransistor With Ultrahigh Detectivity and Photo-to-Dark Current Ratio. IEEE ELECTRON DEVICE LETTERS[J]. 2019, 40(5): 742-745, http://dx.doi.org/10.1109/LED.2019.2908948.
[114] Chuai, Xichen, Yang, Guanhua, Wei, Wei, Wang, Jiawei, Shi, Xuewen, Lu, Congyan, Zhao, Ying, Su, Yue, Wu, Quantan, Geng, Di, Lu, Nianduan, Li, Ling, Liu, Ming. Optimization of Electrical Properties of MoS2 Field-Effect Transistors by Dipole Layer Coulombic Interaction With Trap States. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS[J]. 2019, 13(7): [115] Hassan Ul Huzaibi, Xuewen Shi, Di Geng, Nianduan Lu, Ling Li, Ming Liu. Charge transport mechanism in low temperature polycrystalline silicon (LTPS) thin-film transistors. AIP ADVANCES[J]. 2019, 9(2): https://doaj.org/article/752395d12ad54ad6a265889a3243dbf7.
[116] Tan Yuan, Long Shibing, Dong Hang, He Qiming, Jian Guangzhong, Zhang Ying, Hou Xiaohu, Tan Pengju, Zhang Zhongfang, Lu: Hangbing, Liu Qi, Liu Ming. Review of deep ultraviolet photodetector based on gallium oxide. 中国物理B[J]. 2019, 126-142, http://lib.cqvip.com/Qikan/Article/Detail?id=90718776504849574849484857.
[117] Li, Weitao, Liu, Ming, Wu, Meng, Jiang, Chunyu, Kuzyakov, Yakov, Gavrichkova, Olga, Feng, Youzhi, Dong, Yuanhua, Li, Zhongpei. Bacterial community succession in paddy soil depending on rice fertilization. APPLIED SOIL ECOLOGY[J]. 2019, 144: 92-97, http://dx.doi.org/10.1016/j.apsoil.2019.07.014.
[118] Hou, Xiaohu, Sun, Haiding, Long, Shibing, Tompa, Gary S, Salagaj, Tom, Qin, Yuan, Zhang, Zhongfang, Tan, Pengju, Yu, Shunjie, Liu, Ming. Ultrahigh-Performance Solar-Blind Photodetector Based on alpha-Phase-Dominated Ga2O3 Film With Record Low Dark Current of 81 fA. IEEE ELECTRON DEVICE LETTERS[J]. 2019, 40(9): 1483-1486, http://dx.doi.org/10.1109/LED.2019.2932140.
[119] Liu, Ming, Tang, Weizhe, Duan, Wenyan, Li, Shan, Dou, Rui, Wang, Gong, Liu, Bingshan, Wang, Li. Digital light processing of lunar regolith structures with high mechanical properties. CERAMICS INTERNATIONAL[J]. 2019, 45(5): 5829-5836, http://dx.doi.org/10.1016/j.ceramint.2018.12.049.
[120] Qin, Yuan, Long, Shibing, Dong, Hang, He, Qiming, Jian, Guangzhong, Zhang, Ying, Hou, Xiaohu, Tan, Pengju, Zhang, Zhongfang, Lv, Hangbing, Liu, Qi, Liu, Ming. Review of deep ultraviolet photodetector based on gallium oxide. CHINESE PHYSICS B[J]. 2019, 28(1): http://lib.cqvip.com/Qikan/Article/Detail?id=90718776504849574849484857.
[121] 仇存璞, 陈晓芬, 刘明, 李委涛, 吴萌, 江春玉, 冯有智, 李忠佩. 两种典型水稻土中秸秆碳转化的微生物过程. 中国农业科学[J]. 2019, 2268-2279, http://lib.cqvip.com/Qikan/Article/Detail?id=90788975504849574951484855.
[122] Wu, Quantan, Lu, Congyan, Wang, Hong, Cao, Jingchen, Yang, Guanhua, Wang, Jiawei, Gong, Yuxin, Shi, Xuewen, Chuai, Xichen, Lu, Nianduan, Geng, Di, Li, Ling, Liu, Ming. A Dual-Functional IGZO-Based Device With Schottky Diode Rectifying and Resistance Switching Behaviors. IEEE ELECTRON DEVICE LETTERS[J]. 2019, 40(1): 24-27, [123] Luo, Qing, Ma, Haili, Su, Hailei, Xue, KanHao, Cao, Rongrong, Gao, Zhaomeng, Yu, Jie, Gong, Tiancheng, Xu, Xiaoxin, Yin, Jiahao, Yuan, Peng, Tai, Lu, Dong, Danian, Long, Shibing, Liu, Qi, Miao, XiangShui, Lv, Hangbing, Liu, Ming. Composition-Dependent Ferroelectric Properties in Sputtered HfXZr1-XO2 Thin Films. IEEE ELECTRON DEVICE LETTERS[J]. 2019, 40(4): 570-573, http://dx.doi.org/10.1109/LED.2019.2902609.
[124] Jiang Hongyu, Li Jing, Cao Chengrong, Liu Xiaozhi, Liu Ming, Shen Yutian, Liu Yanhui, Zhang Qinghua, Wang Weihua, Gu Lin, Sun Baoan. Butterfly-wing hierarchical metallic glassy nanostructure for surface enhanced Raman scattering. NANO RESEARCH[J]. 2019, 12(11): 2808-2814, http://lib.cqvip.com/Qikan/Article/Detail?id=7101888829.
[125] Hang Dong, Huiwen Xue, Qiming He, Yuan Qin, Guangzhong Jian, Shibing Long, Ming Liu. Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material. 半导体学报:英文版[J]. 2019, 40(1): 17-25, http://lib.cqvip.com/Qikan/Article/Detail?id=6100202877.
[126] Chen, Huawei, Liu, Chunsen, Wu, Zuheng, He, Yongli, Wang, Zhen, Zhang, Heng, Wan, Qing, Hu, Weida, Zhang, David Wei, Liu, Ming, Liu, Qi, Zhou, Peng. Time-Tailoring van der Waals Heterostructures for Human Memory System Programming. ADVANCED SCIENCE[J]. 2019, 6(20): https://www.webofscience.com/wos/woscc/full-record/WOS:000482951100001.
[127] Yu, Jie, Xu, Xiaoxin, Gong, Tiancheng, Luo, Qing, Dong, Danian, Yuan, Peng, Tai, Lu, Yin, Jiahao, Zhu, Xi, Wu, Xiulong, Lv, Hangbing, Liu, Ming. Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta2O5/TaOx Bi-Layer Structure. NANOSCALE RESEARCH LETTERS[J]. 2019, 14(1): https://doaj.org/article/7ee6b4b8ee664d50b8088691c5f2d980.
[128] Kai Xi, Jinshun Bi, Sandip Majumdar, Bo Li, Jing Liu, Yannan Xu, Ming Liu. Total ionizing dose effects on graphene-based charge-trapping memory. SCIENCE CHINA INFORMATION SCIENCES,[J]. 2019, 62(12): https://www.webofscience.com/wos/woscc/full-record/WOS:000495343700001.
[129] Qin, Yuan, Sun, Haiding, Long, Shibing, Tompa, Gary S, Salagaj, Tom, Dong, Hang, He, Qiming, Jian, Guangzhong, Liu, Qi, Lv, Hangbing, Liu, Ming. High-Performance Metal-Organic Chemical Vapor Deposition Grown epsilon-Ga2O3 Solar-Blind Photodeterctor With Asymmetric Schottky Electrodes. IEEE ELECTRON DEVICE LETTERS[J]. 2019, 40(9): 1475-1478, http://dx.doi.org/10.1109/LED.2019.2932382.
[130] Wu, Quantan, Yang, Guanhua, Lu, Congyan, Xu, Guangwei, Wang, Jiawei, Dang, Bingjie, Gong, Yuxin, Shi, Xuewen, Chuai, Xichen, Lu, Nianduan, Geng, Di, Wang, Hong, Li, Ling, Liu, Ming. Room Temperature-Processed a-IGZO Schottky Diode for Rectifying Circuit and Bipolar 1D1R Crossbar Applications. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2019, 66(9): 4087-4091, https://www.webofscience.com/wos/woscc/full-record/WOS:000482583200060.
[131] Yang, Guanhua, Chuai, Xichen, Niu, Jiebin, Wang, Jiawei, Shi, Xuewen, Wu, Quantan, Su, Yue, Zhao, Ying, Liu, Dongyang, Xu, Guangwei, Lu, Congyan, Geng, Di, Lu, Nianduan, Li, Ling, Liu, Ming. Anomalous Positive Bias Stress Instability in MoS2 Transistors With High-Hydrogen-Concentration SiO2 Gate Dielectrics. IEEE ELECTRON DEVICE LETTERS[J]. 2019, 40(2): 232-235, https://www.webofscience.com/wos/woscc/full-record/WOS:000457606300019.
[132] Wenchang Zhang, Yuan Hu, Gihoon Choi, Shengfa Liang, Ming Liu, Weihua Guan. Microfluidic multiple cross-correlated Coulter counter for improved particle size analysis. SENSORS & ACTUATORS: B. CHEMICAL[J]. 2019, 296: 126615-, http://dx.doi.org/10.1016/j.snb.2019.05.092.
[133] Xu, Peng, Guo, Huiqin, Wang, Huihui, Xie, Yuxin, Lee, Shao Chin, Liu, Ming, Zheng, Jian, Mao, Xiuli, Wang, Huan, Liu, Fatao, Wan, Chunling, Qin, Shengying, Liu, Yun, Zhao, Meirong, Wang, Lan. Identification and profiling of microRNAs responsive to cadmium toxicity in hepatopancreas of the freshwater crab Sinopotamon henanense. HEREDITAS[J]. 2019, 156(1): http://dx.doi.org/10.1186/s41065-019-0110-z.
[134] Qin, Yuan, Long, Shibing, He, Qiming, Dong, Hang, Jian, Guangzhong, Zhang, Ying, Hou, Xiaohu, Tan, Pengju, Zhang, Zhongfang, Lu, Yingjie, Shan, Chongxin, Wang, Jianlu, Hu, Weida, Lv, Hangbing, Liu, Qi, Liu, Ming. Amorphous Gallium Oxide-Based Gate-Tunable High-Performance Thin Film Phototransistor for Solar-Blind Imaging. ADVANCED ELECTRONIC MATERIALS[J]. 2019, 5(7): http://dx.doi.org/10.1002/aelm.201900389.
[135] 陈丹旸, 季兰龙, 李梅, 李博, 毕津顺, 刘明. 55 nm SONOS闪存单元的1/f噪声特性研究. 微电子学[J]. 2019, 49(6): 852-857, http://lib.cqvip.com/Qikan/Article/Detail?id=7100608853.
[136] 刘明. 半导体存储器技术. 科技导报(北京)[J]. 2019, 37(3): 62-65, http://lib.cqvip.com/Qikan/Article/Detail?id=75746866504849574851484949.
[137] 陈晓芬, 吴萌, 江春玉, 刘明, 李忠佩. 不同培养温度下长期施肥红壤水稻土有机碳矿化特征研究. 土壤[J]. 2019, 51(5): 864-870, http://lib.cqvip.com/Qikan/Article/Detail?id=7100358649.
[138] Xu, Guangwei, Cai, Le, Wang, Zhengxu, Wu, Quantan, Lu, Congyan, Zhao, Zhiyu, Zhao, Yepin, Geng, Di, Li, Ling, Liu, Ming, Yang, Yang. Field-Dependent Mobility Enhancement and Contact Resistance in a-IGZO TFTs. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2019, 66(12): 5166-5169, [139] Shi, Xuewen, Lu, Congyan, Xu, Guangwei, Yang, Guanhua, Lu, Nianduan, Ji, Zhuoyu, Geng, Di, Li, Ling, Liu, Ming. Thickness of accumulation layer in amorphous indium-gallium-zinc-oxide thin-film transistors by Kelvin Probe Force Microscopy. APPLIED PHYSICS LETTERS[J]. 2019, 114(7): http://dx.doi.org/10.1063/1.5057719.
[140] 刘继权, 黄飞, 秦俊, 王艳, 刘琦, 刘明, 邓龙江, 毕磊. 钇掺杂氧化铪薄膜的铁电与非线性光学性能研究. 湘潭大学学报:自然科学版[J]. 2019, 41(5): 93-103, http://lib.cqvip.com/Qikan/Article/Detail?id=7100750046.
[141] 刘璟, 谢元禄, 霍长兴, 呼红阳, 张坤, 毕津顺, 刘明. 65nm闪存芯片擦除时间退化的优化设计. 电子科技大学学报[J]. 2019, 48(4): 492-497, http://lib.cqvip.com/Qikan/Article/Detail?id=7002450689.
[142] Xian, Haijie, Liu, Ming, Wang, Xiaochen, Ye, Fangfu, Wen, Ping, Bai, Haiyang, Liu, Yanhui, Wang, Weihua. Flexible and stretchable metallic glass micro- and nano-structures of tunable properties. NANOTECHNOLOGY[J]. 2019, 30(8): [143] Xu, Yannan, Bi, Jinshun, Xi, Kai, Liu, Ming. The effects of gamma-ray irradiation on graphene/n-Si Schottky diodes. APPLIED PHYSICS EXPRESS[J]. 2019, 12(6): [144] Lv, Yuanjie, Zhou, Xingye, Long, Shibing, Song, Xubo, Wang, Yuangang, Liang, Shixiong, He, Zezhao, Han, Tingting, Tan, Xin, Feng, Zhihong, Dong, Hang, Zhou, Xuanze, Yu, Yangtong, Cai, Shujun, Liu, Ming. Source-Field-Plated beta-Ga2O3 MOSFET With Record Power Figure of Merit of 50.4 MW/cm(2). IEEE ELECTRON DEVICE LETTERS[J]. 2019, 40(1): 83-86, [145] 陈晓芬, 刘明, 江春玉, 吴萌, 贾仲君, 李忠佩. 红壤性水稻土不同粒级团聚体有机碳矿化及其温度敏感性. 土壤学报[J]. 2019, 56(5): 1118-1127, http://lib.cqvip.com/Qikan/Article/Detail?id=7003080658.
[146] Ma, Haili, Zhang, Xumeng, Wu, Facai, Luo, Qing, Gong, Tiancheng, Yuan, Peng, Xu, Xiaoxin, Liu, Yu, Zhao, Shengjie, Zhang, Kaiping, Lu, Cheng, Zhang, Peiwen, Feng, Jie, Lv, Hangbing, Liu, Ming. A Self-Rectifying Resistive Switching Device Based on HfO2/TaOx Bilayer Structure. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2019, 66(2): 924-928, http://dx.doi.org/10.1109/TED.2018.2883192.
[147] 曹杨, 习凯, 徐彦楠, 李梅, 李博, 毕津顺, 刘明. 55 nm硅-氧化硅-氮化硅-氧化硅-硅闪存单元的γ射线和X射线电离总剂量效应研究. 物理学报[J]. 2019, 272-279, http://lib.cqvip.com/Qikan/Article/Detail?id=87768866504849574851485148.
[148] Danian Dong, Xiulong Wu, Tiancheng Gong, Ming Liu, Hangbing Lv, Jie Yu, Xiaoxin Xu, Xi Zhu, Jiahao Yin, Peng Yuan, Qing Luo, Lu Tai. Suppression of filament overgrowth in conductive bridge random access memory by tao/tao bi-layer structure.. NANOSCALE RESEARCH LETTERS[J]. 2019, Vol.14 no.1: 111-, http://www.corc.org.cn/handle/1471x/2205900.
[149] Cao, Rongrong, Song, Bing, Shang, D S, Yang, Yang, Luo, Qing, Wu, Shuyu, Li, Yue, Wang, Yan, Lv, Hangbing, Liu, Qi, Liu, Ming. Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode. IEEE ELECTRON DEVICE LETTERS[J]. 2019, 40(11): 1744-1747, [150] Zhao, Xiaolong, Zhang, Xumeng, Shang, Dashan, Wu, Zuheng, Xiao, Xiangheng, Chen, Rui, Tang, Chongyang, Liu, Jiangchao, Li, Wenqing, Lv, Hangbing, Jiang, Changzhong, Liu, Qi, Liu, Ming. Uniform, Fast, and Reliable LixSiOy-Based Resistive Switching Memory. IEEE ELECTRON DEVICE LETTERS[J]. 2019, 40(4): 554-557, [151] Xi Kai, Bi Jinshun, Majumdar Sandip, Li Bo, Liu Jing, Xu Yannan, Liu Ming. Total ionizing dose effects on graphene-based charge-trapping memory. SCIENCE CHINA. INFORMATION SCIENCE[J]. 2019, 62(12): 191-198, https://www.sciengine.com/doi/10.1007/s11432-018-9799-1.
[152] Su, Yue, Geng, Di, Gong, Yuxin, Yang, Guanhua, Chuai, Xichen, Zhao, Ying, Shi, Xuewen, Zhang, Lining, Lu, Nianduan, Li, Ling, Liu, Ming. Dynamic Time Evolutionary Aging Analysis for Device-Circuit Lifetime Estimation of Thin-Film Transistors. IEEE ELECTRON DEVICE LETTERS[J]. 2019, 40(9): 1439-1442, [153] Hang Dong, Huiwen Xue, Qiming He, Yuan Qin, Guangzhong Jian, Shibing Long, Ming Liu. Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material. JOURNAL OF SEMICONDUCTORS[J]. 2019, 40(1): 011802-1, http://lib.cqvip.com/Qikan/Article/Detail?id=6100202877.
[154] Sun, Yiming, Zhao, Xiaolong, Song, Cheng, Xu, Kun, Xi, Yue, Yin, Jun, Wang, Ziyu, Zhou, Xiaofeng, Chen, Xianzhe, Shi, Guoyi, Lv, Hangbing, Liu, Qi, Zeng, Fei, Zhong, Xiaoyan, Wu, Huaqiong, Liu, Ming, Pan, Feng. Performance-Enhancing Selector via Symmetrical Multilayer Design. ADVANCED FUNCTIONAL MATERIALS[J]. 2019, 29(13): https://www.webofscience.com/wos/woscc/full-record/WOS:000463732400014.
[155] Xu, Peng, Guo, Huiqin, Wang, Huan, Lee, Shao Chin, Liu, Ming, Pan, Yongliang, Zheng, Jian, Zheng, Kang, Wang, Huihui, Xie, Yuxin, Bai, Xiaoxia, Liu, Yun, Zhao, Meirong, Wang, Lan. Downregulations of placental fatty acid transporters during cadmium-induced fetal growth restriction. TOXICOLOGY[J]. 2019, 423: 112-122, http://dx.doi.org/10.1016/j.tox.2019.05.013.
[156] Liu, Ming, Zhou, Yurong, Dong, Gangqiang, Wang, Wenjing, Wang, Jiaou, Liu, Chen, Liu, Fengzhen, Yu, Donghong. SnO2/Mg combination electron selective transport layer for Si heterojunction solar cells. SOLAR ENERGY MATERIALS AND SOLAR CELLS[J]. 2019, 200: http://dx.doi.org/10.1016/j.solmat.2019.109996.
[157] Xu Xiaoxin, Tai Lu, Gong Tiancheng, Yin Jiahao, Huang Peng, Yu Jie, Dong Da Nian, Luo Qing, Liu Jing, Yu Zhaoan, Zhu Xi, Wu Xiu Long, Liu Qi, Lv Hangbing, Liu Ming, IEEE. 40x Retention Improvement by Eliminating Resistance Relaxation with High Temperature Forming in 28 nm RRAM Chip. 2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)null. 2018, [158] Liu, Ming, Liu, Jia, Chen, Xiaofen, Jiang, Chunyu, Wu, Meng, Li, Zhongpei. Shifts in bacterial and fungal diversity in a paddy soil faced with phosphorus surplus. BIOLOGY AND FERTILITY OF SOILS[J]. 2018, 54(2): 259-267, https://www.webofscience.com/wos/woscc/full-record/WOS:000422837100007.
[159] Liu Jing, Xu Xiaoxin, Chen Chuanbing, Gong Tiancheng, Yu Zhaoan, Luo Qing, Yuan Peng, Dong Danian, Liu Qi, Long Shibing, Lu: Hangbing, Liu Ming. Analysis of tail bits generation of multilevel storage in resistive switching memory. 中国物理B:英文版[J]. 2018, 27(11): 626-629, http://lib.cqvip.com/Qikan/Article/Detail?id=676727061.
[160] Wu, Quantan, Banerjee, Writam, Cao, Jingchen, Ji, Zhuoyu, Li, Ling, Liu, Ming. Improvement of durability and switching speed by incorporating nanocrystals in the HfOx based resistive random access memory devices. APPLIED PHYSICS LETTERS[J]. 2018, 113(2): https://www.webofscience.com/wos/woscc/full-record/WOS:000438744300033.
[161] Zhang, Xumeng, Wang, Wei, Liu, Qi, Zhao, Xiaolong, Wei, Jinsong, Cao, Rongrong, Yao, Zhihong, Zhu, Xiaoli, Zhang, Feng, Lv, Hangbing, Long, Shibing, Liu, Ming. An Artificial Neuron Based on a Threshold Switching Memristor. IEEEELECTRONDEVICELETTERS[J]. 2018, 39(2): 308-311, https://www.webofscience.com/wos/woscc/full-record/WOS:000424080800036.
[162] Wang, Yan, Huang, Fei, Hu, Yuan, Cao, Rongrong, Shi, Tuo, Liu, Qi, Bi, Lei, Liu, Ming. Proton Radiation Effects on Y-Doped HfO2-Based Ferroelectric Memory. IEEE ELECTRON DEVICE LETTERS[J]. 2018, 39(6): 823-826, https://www.webofscience.com/wos/woscc/full-record/WOS:000437086800010.
[163] Zheng, Xiaohua, Wang, Lei, Liu, Ming, Lei, Pengpeng, Liu, Feng, Xie, Zhigang. Nanoscale Mixed-Component Metal-Organic Frameworks with Photosensitizer Spatial-Arrangement-Dependent Photochemistry for Multimodal-Imaging-Guided Photothermal Therapy. CHEMISTRY OF MATERIALS[J]. 2018, 30(19): 6867-6876, https://www.webofscience.com/wos/woscc/full-record/WOS:000447237800030.
[164] Xu, Guangwei, Gao, Nan, Lu, Congyan, Wang, Wei, Ji, Zhuoyu, Bi, Chong, Han, Zhiheng, Lu, Nianduan, Yang, Guanhua, Li, Yuan, Liu, Qi, Li, Ling, Liu, Ming. Bulk-Like Electrical Properties Induced by Contact-Limited Charge Transport in Organic Diodes: Revised Space Charge Limited Current. ADVANCED ELECTRONIC MATERIALS[J]. 2018, 4(5): https://www.webofscience.com/wos/woscc/full-record/WOS:000431958800001.
[165] Ming Liu, Yanlin Lv, Xiaoke Jie, Zihui Meng, Xuefei Wang, Jijun Huang, Aidong Peng, Zhiyuan Tian. A super-sensitive ratiometric fluorescent probe for monitoring intracellular subtle pH fluctuation. SENSORS & ACTUATORS: B. CHEMICAL[J]. 2018, 273: 167-175, http://dx.doi.org/10.1016/j.snb.2018.06.048.
[166] He, Qiming, Mu, Wenxiang, Fu, Bo, Jia, Zhitai, Long, Shibing, Yu, Zhaoan, Yao, Zhihong, Wang, Wei, Dong, Hang, Qin, Yuan, Jian, Guangzhong, Zhang, Ying, Xue, Huiwen, Lv, Hangbing, Liu, Qi, Tang, Minghua, Tao, Xutang, Liu, Ming. Schottky Barrier Rectifier Based on (100) beta-Ga2O3 and its DC and AC Characteristics. IEEE ELECTRON DEVICE LETTERS[J]. 2018, 39(4): 556-559, http://dx.doi.org/10.1109/LED.2018.2810858.
[167] Li Chao, Yao Yuan, Yang Yang, Shen Xi, Gao Bin, Huo ZongLiang, Kang JinFeng, Liu Ming, Yu RiCheng. In situ transmission electron microscopy studies on nanomaterials and HfO2-based storage nanodevices. ACTAPHYSICASINICA[J]. 2018, 67(12): https://www.webofscience.com/wos/woscc/full-record/WOS:000443198200010.
[168] Wang, Jiawei, Ji, Zhuoyu, Yang, Guanhua, Chuai, Xichen, Liu, Fengjing, Zhou, Zheng, Lu, Congyan, Wei, Wei, Shi, Xuewen, Niu, Jiebin, Wang, Liang, Wang, Hong, Chen, Jiezhi, Lu, Nianduan, Jiang, Chao, Li, Ling, Liu, Ming. Charge Transfer within the F(4)TCNQ-MoS2 van der Waals Interface: Toward Electrical Properties Tuning and Gas Sensing Application. ADVANCED FUNCTIONAL MATERIALS[J]. 2018, 28(51): https://www.webofscience.com/wos/woscc/full-record/WOS:000453604700023.
[169] Wang, Hao, Zhang, Lanmei, Guo, Xuejiang, Bai, Yang, Li, YuXia, Sha, Jiahao, Peng, Chun, Wang, YanLing, Liu, Ming. MiR-195 modulates oxidative stress-induced apoptosis andmitochondrial energy production in human trophoblasts via flavin adenine dinucleotide-dependent oxidoreductase domain-containing protein 1 and pyruvate dehydrogenase phosphatase regulatory subunit. JOURNAL OF HYPERTENSION[J]. 2018, 36(2): 306-318, https://www.webofscience.com/wos/woscc/full-record/WOS:000429316900013.
[170] Gong, Tiancheng, Luo, Qing, Xu, Xiaoxin, Yu, Jie, Dong, Danian, Lv, Hangbing, Yuan, Peng, Chen, Chuanbing, Yin, Jiahao, Tai, Lu, Zhu, Xi, Liu, Qi, Long, Shibing, Liu, Ming. Classification of Three-Level Random Telegraph Noise and Its Application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory. IEEE ELECTRON DEVICE LETTERS[J]. 2018, 39(9): 1302-1305, http://dx.doi.org/10.1109/LED.2018.2858245.
[171] Luo Qing, Gong Tiancheng, Cheng Yan, Zhang Qingzhu, Yu Haoran, Yu Jie, Ma Haili, Xu Xiaoxin, Huang Kailiang, Zhu Xi, Dong Danian, Yin Jiahao, Yuan Peng, Tai Lu, Gao Jianfeng, Li Junfeng, Yin Huaxiang, Long Shibing, Liu Qi, Lv Hangbing, Liu Ming, IEEE. Hybrid 1T e-DRAM and e-NVM Realized in One 10 nm node Ferro FinFET device with Charge Trapping and Domain Switching Effects. 2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)null. 2018, [172] Cao, Jingchen, Liu, Wei, Wu, Quantan, Yang, Guanhua, Lu, Nianduan, Ji, Zhuoyu, Geng, Di, Li, Ling, Liu, Ming. A New Velocity Saturation Model of MoS2 Field-Effect Transistors. IEEE ELECTRON DEVICE LETTERS[J]. 2018, 39(6): 893-896, https://www.webofscience.com/wos/woscc/full-record/WOS:000437086800028.
[173] Liu Ming. Anomalous Positive Bias Stress Instability in MoS2 Transistors With High-Hydrogen-Concentration SiO2 Gate Dielectric. IEEE Electron Device Letters. 2018, [174] Li, Mei, Bi, JinShun, Xu, YanNan, Li, Bo, Xi, Kai, Wang, HaiBin, JingLiu, JinLi, Ji, LanLong, Luo, Li, Liu, Ming. Total Ionizing Dose Effects of 55-nm Silicon-Oxide-Nitride-Oxide-Silicon Charge Trapping Memory in Pulse and DC Modes. CHINESE PHYSICS LETTERS[J]. 2018, 35(7): http://lib.cqvip.com/Qikan/Article/Detail?id=675657244.
[175] Zhao, Xiaolong, Ma, Jun, Xiao, Xiangheng, Liu, Qi, Shao, Lin, Chen, Di, Liu, Sen, Niu, Jiebin, Zhang, Xumeng, Wang, Yan, Cao, Rongrong, Wang, Wei, Di, Zengfeng, Lv, Hangbing, Long, Shibing, Liu, Ming. Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects. ADVANCED MATERIALS[J]. 2018, 30(14): http://dx.doi.org/10.1002/adma.201705193.
[176] Li, Guanlin, Ma, Liyang, Lu, Huifen, Cao, Guangming, Shao, Xuan, Liu, Yanlei, Li, Yuxia, Liu, Ming, Yang, Huixia, Wang, Yanling. Transactivation of Met signalling by semaphorin4D in human placenta: implications for the pathogenesis of preeclampsia. JOURNAL OF HYPERTENSION[J]. 2018, 36(11): 2215-2225, https://www.webofscience.com/wos/woscc/full-record/WOS:000452654200014.
[177] Wang, Sikai, Liu, Ming, Pang, Bo, Li, Peng, Yao, Zhaolin, Zhang, Xu, Chen, Hongda, IEEE. A new physiological signal acquisition patch designed with advanced respiration monitoring algorithm based on 3-axis accelerator and gyroscope. 2018 40TH ANNUAL INTERNATIONAL CONFERENCE OF THE IEEE ENGINEERING IN MEDICINE AND BIOLOGY SOCIETY (EMBC)null. 2018, 441-444, [178] Dong, Danian, Liu, Jing, Wang, Yuduo, Xu, Xiaoxin, Yuan, Peng, Chen, Chuanbing, Gong, Tiancheng, Luo, Qing, Ma, Haili, Yu, Zhaoan, Lv, Hangbing, Liu, Ming. The Impact of RTN Signal on Array Level Resistance Fluctuation of Resistive Random Access Memory. IEEE ELECTRON DEVICE LETTERS[J]. 2018, 39(5): 676-679, http://dx.doi.org/10.1109/LED.2018.2821681.
[179] Zhao, Ying, Fang, Cong, Zhang, Xumeng, Xu, Xiaoxin, Gong, Tiancheng, Luo, Qing, Chen, Chengying, Liu, Qi, Lv, Hangbing, Li, Qiang, Zhang, Feng, Li, Ling, Liu, Ming. A Compact Model for Drift and Diffusion Memristor Applied in Neuron Circuits Design. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2018, 65(10): 4290-4296, https://www.webofscience.com/wos/woscc/full-record/WOS:000445239700034.
[180] Liu, Jing, Xu, Xiaoxin, Chen, Chuanbing, Gong, Tiancheng, Yu, Zhaoan, Luo, Qing, Yuan, Peng, Dong, Danian, Liu, Qi, Long, Shibing, Lv, Hangbing, Liu, Ming. Analysis of tail bits generation of multilevel storage in resistive switching memory. CHINESE PHYSICS B[J]. 2018, 27(11): http://dx.doi.org/10.1088/1674-1056/27/11/118501.
[181] Liu Ming. Source-Field-Plated β-Ga2O3 MOSFET with Record Power Figure of Merit of 50.4 MW/cm2. IEEE Electron Device Letters. 2018, [182] Wang, Wei, Xu, Guangwei, Chowdhury, M Delwar H, Wang, Hong, Um, Jae Kwang, Ji, Zhuoyu, Gao, Nan, Zong, Zhiwei, Bi, Chong, Lu, Congyan, Lu, Nianduan, Banerjee, Writam, Feng, Jiafeng, Li, Ling, Kadashchuk, Andrey, Jang, Jin, Liu, Ming. Electric field modified Arrhenius description of charge transport in amorphous oxide semiconductor thin film transistors. PHYSICAL REVIEW B[J]. 2018, 98(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000454154700006.
[183] Ming Liu, Xiao-Lei Dai, Chong-Xian Yin, Bin-Qing Zhao. Preliminary design of a femtosecond timing system for large of a femtosecond timing system for large. 核技术:英文版[J]. 2018, 29(3): 42-50, http://lib.cqvip.com/Qikan/Article/Detail?id=7000419493.
[184] Liu, Ming, Dai, XiaoLei, Yin, ChongXian, Zhao, BinQing. Preliminary design of a femtosecond timing system for large accelerator facilities. NUCLEAR SCIENCE AND TECHNIQUES[J]. 2018, 29(3): https://www.webofscience.com/wos/woscc/full-record/WOS:000428976900002.
[185] Xu, YanNan, Bi, JinShun, Xu, GaoBo, Li, Bo, Xi, Kai, Liu, Ming, Wang, HaiBin, Luo, Li. Total Ionization Dose Effects on Charge Storage Capability of Al2O3/HfO2/Al2O3-Based Charge Trapping Memory Cell. CHINESE PHYSICS LETTERS[J]. 2018, 35(11): 86-89, http://lib.cqvip.com/Qikan/Article/Detail?id=676754581.
[186] Li Chao, Yao Yuan, Yang Yang, Shen Xi, Gao Bin, Huo ZongLiang, Kang JinFeng, Liu Ming, Yu RiCheng. In situ transmission electron microscopy studies on nanomaterials and HfO2-based storage nanodevices. ACTA PHYSICA SINICA[J]. 2018, 67(12): https://www.webofscience.com/wos/woscc/full-record/WOS:000443198200010.
[187] Chen, Xiaofen, Liu, Ming, Kuzyakov, Yakov, Li, Weitao, Liu, Jia, Jiang, Chunyu, Wu, Meng, Li, Zhongpei. Incorporation of rice straw carbon into dissolved organic matter and microbial biomass along a 100-year paddy soil chronosequence. APPLIED SOIL ECOLOGY[J]. 2018, 130: 84-90, http://dx.doi.org/10.1016/j.apsoil.2018.06.004.
[188] Gong Tiancheng, Luo Qing, Lv Hangbing, Xu Xiaoxin, Yu Jie, Yuan Peng, Dong Danian, Chen Chuanbing, Yin Jiahao, Tai Lu, Zhu Xi, Long Shibing, Liu Qi, Liu Ming, IEEE. Switching and Failure Mechanism of Self-selective Cell in 3D VRRAM by RTN-based Defect Tracking Technique. 2018 IEEE 10TH INTERNATIONAL MEMORY WORKSHOP (IMW)null. 2018, 23-26, [189] Qi Liu, XuMeng Zhang, Qing LUO, XiaoLong Zhao, HangBing Lv, ShiBing Long, Ming Liu. Modulating 3D memristor synapse by analog spiking pulses for bioinspired neuromorphic computing. 中国科学:物理学、力学、天文学英文版[J]. 2018, 61(8): 75-81, http://lib.cqvip.com/Qikan/Article/Detail?id=675629652.
[190] Liu, Ming, Lv, Yanlin, Jie, Xiaoke, Meng, Zihui, Wang, Xuefei, Huang, Jijun, Peng, Aidong, Tian, Zhiyuan. A super-sensitive ratiometric fluorescent probe for monitoring intracellular subtle pH fluctuation. SENSORS AND ACTUATORS B-CHEMICAL[J]. 2018, 273: 167-175, http://dx.doi.org/10.1016/j.snb.2018.06.048.
[191] Dong, Hang, Mu, Wenxiang, Hu, Yuan, He, Qiming, Fu, Bo, Xue, Huiwen, Qin, Yuan, Jian, Guangzhong, Zhang, Ying, Long, Shibing, Jia, Zhitai, Lv, Hangbing, Liu, Qi, Tao, Xutang, Liu, Ming. C-V and J-V investigation of HfO2/Al2O3 bilayer dielectrics MOSCAPs on (OW) beta-Ga2O3. AIP ADVANCES[J]. 2018, 8(6): http://dx.doi.org/10.1063/1.5031183.
[192] 李梅, 毕津顺, 徐彦楠, 李博, 习凯, 王海滨, 刘璟, 李金, 季兰龙, 骆丽, 刘明. Total Ionizing Dose Effects of 55-nm Silicon-Oxide-Nitride-Oxide-Silicon Charge Trapping Memory in Pulse and DC Modes. 中国物理快报:英文版[J]. 2018, 35(7): 130-133, http://lib.cqvip.com/Qikan/Article/Detail?id=675657244.
[193] 毕津顺, 习凯, 李博, 王海滨, 季兰龙, 李金, 刘明. Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory. 中国物理B:英文版[J]. 2018, 27(9): 615-619, http://lib.cqvip.com/Qikan/Article/Detail?id=676284862.
[194] Banerjee, Writam, Zhang, Xumeng, Luo, Qing, Lv, Hangbing, Liu, Qi, Long, Shibing, Liu, Ming. Design of CMOS Compatible, High-Speed, Highly-Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2/Al2O3/TiOx (HAT) RRAM. ADVANCED ELECTRONIC MATERIALS[J]. 2018, 4(2): http://dx.doi.org/10.1002/aelm.201700561.
[195] Cao, Jingchen, Peng, Songang, Liu, Wei, Wu, Quantan, Li, Ling, Geng, Di, Yang, Guanhua, Ji, Zhouyu, Lu, Nianduan, Liu, Ming. A new surface-potential-based compact model for the MoS2 field effect transistors in active matrix display applications. JOURNAL OF APPLIED PHYSICS[J]. 2018, 123(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000425192500016.
[196] Wu, Quantan, Wang, Jiawei, Cao, Jingchen, Lu, Congyan, Yang, Guanhua, Shi, Xuewen, Chuai, Xichen, Gong, Yuxin, Su, Yue, Zhao, Ying, Lu, Nianduan, Geng, Di, Wang, Hong, Li, Ling, Liu, Ming. Photoelectric Plasticity in Oxide Thin Film Transistors with Tunable Synaptic Functions. ADVANCED ELECTRONIC MATERIALS[J]. 2018, 4(12): https://www.webofscience.com/wos/woscc/full-record/WOS:000452617800020.
[197] Li, Liang, Liu, Yifei, Chen, Longwei, Wang, Gong, Liu, Ming, Ren, Zhaoxing, Zhao, Ying, Liu, Bingshan, Zhao, Guangheng. Characteristics of an electron beam extracted from a microwave electron cyclotron resonance plasma cathode. REVIEW OF SCIENTIFIC INSTRUMENTS[J]. 2018, 89(8): https://www.webofscience.com/wos/woscc/full-record/WOS:000443720400022.
[198] Lu, Nianduan, Wei, Wei, Chuai, Xichen, Mei, Yuhan, Li, Ling, Liu, Ming, IEEE. Investigation of adsorbed small-molecule on boron nitride nanotube (BNNT) based on first-principles calculations. 2018 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2018)null. 2018, 284-287, [199] Ding, Jiangnan, Zhou, Yurong, Dong, Gangqiang, Liu, Ming, Yu, Donghong, Liu, Fengzhen. Solution-processed ZnO as the efficient passivation and electron selective layer of silicon solar cells. PROGRESS IN PHOTOVOLTAICS[J]. 2018, 26(12): 974-980, https://www.webofscience.com/wos/woscc/full-record/WOS:000450333300003.
[200] Lu, Nianduan, Li, Ling, Geng, Di, Liu, Ming. A review for polaron dependent charge transport in organic semiconductor. ORGANIC ELECTRONICSnull. 2018, 61: 223-234, http://dx.doi.org/10.1016/j.orgel.2018.05.053.
[201] Cao, Rongrong, Wang, Yan, Zhao, Shengjie, Yang, Yang, Zhao, Xiaolong, Wang, Wei, Zhang, Xumeng, Lv, Hangbing, Liu, Qi, Liu, Ming. Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films. IEEE ELECTRON DEVICE LETTERS[J]. 2018, 39(8): 1207-1210, https://www.webofscience.com/wos/woscc/full-record/WOS:000440006100023.
[202] Liu, Qi, Zhang, XuMeng, Luo, Qing, Zhao, XiaoLong, Lv, HangBing, Long, ShiBing, Liu, Ming. Modulating 3D memristor synapse by analog spiking pulses for bioinspired neuromorphic computing. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY[J]. 2018, 61(8): 75-81, http://lib.cqvip.com/Qikan/Article/Detail?id=675629652.
[203] Wei, Shiping, Wu, Meng, Li, Guilong, Liu, Ming, Jiang, Chunyu, Li, Zhongpei. Fungistatic Activity of Multiorigin Humic Acids in Relation to Their Chemical Structure. JOURNAL OF AGRICULTURAL AND FOOD CHEMISTRY[J]. 2018, 66(28): 7514-7521, [204] Wu, Facai, Si, Shuyao, Shi, Tuo, Zhao, Xiaolong, Liu, Qi, Liao, Lei, Lv, Hangbing, Long, Shibing, Liu, Ming. Negative differential resistance effect induced by metal ion implantation in SiO2 film for multilevel RRAM application. NANOTECHNOLOGY[J]. 2018, 29(5): https://www.webofscience.com/wos/woscc/full-record/WOS:000419355500001.
[205] Bi, JinShun, Xi, Kai, Li, Bo, Wang, HaiBin, Ji, LanLong, Li, Jin, Liu, Ming. Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory. CHINESE PHYSICS B[J]. 2018, 27(9): http://lib.cqvip.com/Qikan/Article/Detail?id=676284862.
[206] Gong, Tiancheng, Luo, Qing, Lv, Hangbing, Xu, Xiaoxin, Yu, Jie, Yuan, Peng, Dong, Danian, Chen, Chuanbing, Yin, Jiahao, Tai, Lu, Zhu, Xi, Liu, Qi, Long, Shibing, Liu, Ming. Unveiling the Switching Mechanism of a TaOx/HfO2 Self-Selective Cell by Probing the Trap Profiles With RTN Measurements. IEEE ELECTRON DEVICE LETTERS[J]. 2018, 39(8): 1152-1155, http://dx.doi.org/10.1109/LED.2018.2849730.
[207] Banerjee, Writam, Lu, Nianduan, Yang, Yang, Li, Ling, Lv, Hangbing, Liu, Qi, Long, Shibing, Liu, Ming. Investigation of Retention Behavior of TiOx/Al2O3 Resistive Memory and Its Failure Mechanism Based on Meyer-Neldel Rule. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2018, 65(3): 957-962, http://dx.doi.org/10.1109/TED.2017.2788460.
[208] Lu Nianduan, Wei Wei, Chuai Xichen, Mei Yuhan, Li Ling, Liu Ming, IEEE. Adsorbed property of boron nitride nanotube (BNNT) device: A study of first-principles calculations. 2018 9TH INTHERNATIONAL CONFERENCE ON COMPUTER AIDED DESIGN FOR THIN-FILM TRANSISTORS (CAD-TFT)null. 2018, 15-15, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000458325100011.
[209] Wu, Quantan, Wang, Hong, Luo, Qing, Banerjee, Writam, Cao, Jingchen, Zhang, Xumeng, Wu, Facai, Liu, Qi, Li, Ling, Liu, Ming. Full imitation of synaptic metaplasticity based on memristor devices. NANOSCALE[J]. 2018, 10(13): 5875-5881, https://www.webofscience.com/wos/woscc/full-record/WOS:000428788200012.
[210] Luo, Qing, Zhang, Xumeng, Hu, Yuan, Gong, Tiancheng, Xu, Xiaoxin, Yuan, Peng, Ma, Haili, Dong, Danian, Lv, Hangbing, Long, Shibing, Liu, Qi, Liu, Ming. Self-Rectifying and Forming-Free Resistive-Switching Device for Embedded Memory Application. IEEE ELECTRON DEVICE LETTERS[J]. 2018, 39(5): 664-667, http://dx.doi.org/10.1109/LED.2018.2821162.
[211] Wang, Rui, Shi, Tuo, Zhang, Xumeng, Wang, Wei, Wei, Jinsong, Lu, Jian, Zhao, Xiaolong, Wu, Zuheng, Cao, Rongrong, Long, Shibing, Liu, Qi, Liu, Ming. Bipolar Analog Memristors as Artificial Synapses for Neuromorphic Computing. MATERIALS[J]. 2018, 11(11): https://doaj.org/article/a1d894dbfa6f4dc1a07c97a4e651fccd.
[212] Jie, Xiaoke, Liu, Ming, Peng, Aidong, Huang, Jijun, Zhang, Yuanlin, Wang, Xuefei, Tian, Zhiyuan. A new colorimetric, near-infrared fluorescent probe for rapid detection of palladium with high sensitivity and selectivity. TALANTA[J]. 2018, 183: 164-171, http://dx.doi.org/10.1016/j.talanta.2018.02.019.
[213] Chen, Dongxue, Dong, Jianjie, Yang, Jianji, Hua, Yilei, Li, Guixin, Guo, Chuanfei, Xie, Changqing, Liu, Ming, Liu, Qian. Realization of near-perfect absorption in the whole reststrahlen band of SiC. NANOSCALE[J]. 2018, 10(20): 9450-9454, https://www.webofscience.com/wos/woscc/full-record/WOS:000433260300003.
[214] Yao, Zhaolin, Ma, Xinyao, Wang, Yijun, Zhang, Xu, Liu, Ming, Pei, Weihua, Chen, Hongda. High-Speed Spelling in Virtual Reality with Sequential Hybrid BCIs. IEICE TRANSACTIONS ON INFORMATION AND SYSTEMS[J]. 2018, E101D(11): 2859-2862, https://www.webofscience.com/wos/woscc/full-record/WOS:000448774200035.
[215] Jian, Guangzhong, He, Qiming, Mu, Wenxiang, Fu, Bo, Dong, Hang, Qin, Yuan, Zhang, Ying, Xue, Huiwen, Long, Shibing, Jia, Zhitai, Lv, Hangbing, Liu, Qi, Tao, Xutang, Liu, Ming. Characterization of the inhomogeneous barrier distribution in a Pt/(100) beta-Ga2O3 Schottky diode via its temperature-dependent electrical properties. AIP ADVANCES[J]. 2018, 8(1): http://dx.doi.org/10.1063/1.5007197.
[216] Lu, Nianduan, Jiang, Wenfeng, Wu, Quantan, Geng, Di, Li, Ling, Liu, Ming. A Review for Compact Model of Thin-Film Transistors (TFTs). MICROMACHINES[J]. 2018, 9(11): https://doaj.org/article/dbe58d2873574e9fb3d6f00b59dafd28.
[217] Zhou, Keji, Xue, Xiaoyong, Yang, Jianguo, Xu, Xiaoxin, Lv, Hangbing, Wang, Mingyu, Jing, Minge, Liu, Wenjun, Zeng, Xiaoyang, Chung, Steve S, Li, Jing, Liu, Ming, IEEE. Nonvolatile Crossbar 2D2R TCAM with Cell Size of 16.3 F-2 and K-means Clustering for Power Reduction. 2018 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC): PROCEEDINGS OF TECHNICAL PAPERSnull. 2018, 135-138, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000459847500044.
[218] Bi Jinshun, Duan Yuan, Zhang Feng, Liu Ming, IEEE. Total Ionizing Dose Effects of 1 Mb HfO2-based Resistive-Random-Access-Memory. 2018 25TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA)null. 2018, [219] Liu, Ming, Wang, Lei, Zheng, Xiaohua, Liu, Shi, Xie, Zhigang. Hypoxia-Triggered Nanoscale Metal-Organic Frameworks for Enhanced Anticancer Activity. ACS APPLIED MATERIALS & INTERFACES[J]. 2018, 10(29): 24638-24647, https://www.webofscience.com/wos/woscc/full-record/WOS:000440511900036.
[220] Li, Yi, Yin, KangSheng, Zhang, MeiYun, Cheng, Long, Lu, Ke, Long, ShiBing, Zhou, Yaxiong, Wang, Zhuorui, Xue, KanHao, Liu, Ming, Miao, XiangShui. Correlation analysis between the current fluctuation characteristics and the conductive filament morphology of HfO2-based memristor. APPLIED PHYSICS LETTERS[J]. 2017, 111(21): [221] Li Leilei, Long Shibing, Liu Yang, Teng Jiao, Zhang Meiyun, Li Yu, Guo Qixun, Yu Guanghua, Liu Qi, Lv Hangbing, Liu Ming, IEEE. Magnetoresistance of Conductive Filaments in Resistive Switching Co/HfO2/Pt Structures. 2017IEEE24THINTERNATIONALSYMPOSIUMONTHEPHYSICALANDFAILUREANALYSISOFINTEGRATEDCIRCUITSIPFAnull. 2017, [222] He, Qiming, Mu, Wenxiang, Dong, Hang, Long, Shibing, Jia, Zhitai, Lv, Hangbing, Liu, Qi, Tang, Minghua, Tao, Xutang, Liu, Ming. Schottky barrier diode based on beta-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics. APPLIED PHYSICS LETTERS[J]. 2017, 110(9): http://dx.doi.org/10.1063/1.4977766.
[223] Banerjee, Writam, Liu, Qi, Long, Shibing, Lv, Hangbing, Liu, Ming. Crystal that remembers: several ways to utilize nanocrystals in resistive switching memory. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2017, 50(30): [224] Huang, Fei, Wang, Yan, Liang, Xiao, Qin, Jun, Zhang, Yan, Yuan, Xiufang, Wang, Zhuo, Peng, Bo, Deng, Longjiang, Liu, Qi, Bi, Lei, Liu, Ming. HfO2-Based Highly Stable Radiation-Immune Ferroelectric Memory. IEEE ELECTRON DEVICE LETTERS[J]. 2017, 38(3): 330-333, https://www.webofscience.com/wos/woscc/full-record/WOS:000395878000011.
[225] 习凯, 刘明, 刘璟, 季兰龙, 李金, 毕津顺, 张锋. Pulsed-Laser Testing for Single Event Effects in a Stand-Alone Resistive Random Access Memory. IPFA[J]. 2017, http://159.226.55.106/handle/172511/18190.
[226] Lv, Hangbing, Xu, Xiaoxin, Yuan, Peng, Dong, Danian, Gong, Tiancheng, Liu, Jing, Yu, Zhaoan, Huang, Peng, Zhang, Kun, Huo, Changxing, Chen, Chanbing, Xie, Yuanlu, Luo, Qing, Long, Shibing, Liu, Qi, Kang, Jinfeng, Yang, Daisy, Yin, Simon, Chiu, Shengfen, Liu, Ming, IEEE. BEOL Based RRAM with One Extra-mask for Low Cost, Highly Reliable Embedded Application in 28 nm Node and Beyond. 2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)null. 2017, [227] Banerjee, Writam, Xu, Xiaoxin, Lv, Hangbing, Liu, Qi, Long, Shibing, Liu, Ming. Complementary Switching in 3D Resistive Memory Array. ADVANCED ELECTRONIC MATERIALS[J]. 2017, 3(12): http://dx.doi.org/10.1002/aelm.201700287.
[228] Liu, Ming, Vaziri, Sam, Reggiani, Susanna. Exciting Times for Our Journal. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETYnull. 2017, 5(6): 430-431, https://www.webofscience.com/wos/woscc/full-record/WOS:000413938200001.
[229] Cheng, Long, Zhang, MeiYun, Li, Yi, Zhou, YaXiong, Wang, ZhuoRui, Hu, SiYu, Long, ShiBing, Liu, Ming, Miao, XiangShui. Reprogrammable logic in memristive crossbar for in-memory computing. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2017, 50(50): https://www.webofscience.com/wos/woscc/full-record/WOS:000415951200002.
[230] 刘明, 赵晓龙, 刘森, 牛洁斌, 刘琦, 吕杭炳, 龙世兵. Conning Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer. SMALL[J]. 2017, http://159.226.55.106/handle/172511/18167.
[231] Li, Yu, Long, Shibing, Liu, Qi, Lv, Hangbing, Liu, Ming. Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials. SMALL[J]. 2017, 13(35): http://dx.doi.org/10.1002/smll.201604306.
[232] Zhao, BinQing, Zhao, MingHua, Liu, Ming, Yin, ChongXian, Shu, Hang. The front-end electronics design of dose monitors for beam delivery system of Shanghai Advanced Proton Therapy Facility. NUCLEAR SCIENCE AND TECHNIQUES[J]. 2017, 28(6): http://lib.cqvip.com/Qikan/Article/Detail?id=7000282227.
[233] Lu, Nianduan, Wang, Lingfei, Li, Ling, Liu, Ming. A review for compact model of graphene field-effect transistors. CHINESE PHYSICS B[J]. 2017, 26(3): https://www.webofscience.com/wos/woscc/full-record/WOS:000396129200044.
[234] Huang, Fei, Chen, Xing, Liang, Xiao, Qin, Jun, Zhang, Yan, Huang, Taixing, Wang, Zhuo, Peng, Bo, Zhou, Peiheng, Lu, Haipeng, Zhang, Li, Deng, Longjiang, Liu, Ming, Liu, Qi, Tian, He, Bi, Lei. Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition. PHYSICAL CHEMISTRY CHEMICAL PHYSICS[J]. 2017, 19(5): 3486-3497, https://www.webofscience.com/wos/woscc/full-record/WOS:000395328100007.
[235] Lu Nianduan, Wang Lingfei, Li Ling, Liu Ming. A review for compact model of graphene field-effect transistors. CHIN. PHYS. B[J]. 2017, http://159.226.55.106/handle/172511/18143.
[236] Yannan XU, Jinshun BI, Gaobo XU, Kai XI, Bo LI, Ming LIU. Total ionizing dose effects and annealing behaviors of HfO_2-based MOS capacitor. 中国科学:信息科学(英文版)[J]. 2017, 60(12): 120401-1, http://lib.cqvip.com/Qikan/Article/Detail?id=673840354.
[237] Jiao, Bingqing, Zhang, Delong, Liang, Aiying, Liang, Bishan, Wang, Zengjian, Li, Junchao, Cai, Yuxuan, Gao, Mengxia, Gao, Zhenni, Chang, Song, Huang, Ruiwang, Liu, Ming. Association between resting-state brain network topological organization and creative ability: Evidence from a multiple linear regression model. BIOLOGICAL PSYCHOLOGY[J]. 2017, 129: 165-177, http://dx.doi.org/10.1016/j.biopsycho.2017.09.003.
[238] Leilei Li, Yang Liu, Jiao Teng, Shibing Long, Qixun Guo, Meiyun Zhang, Yu Wu, Guanghua Yu, Qi Liu, Hangbing Lv, Ming Liu. Anisotropic Magnetoresistance of Nano-conductive Filament in Co 2. NANOSCALE RESEARCH LETTERS. 2017, 12(1): http://dx.doi.org/10.1186/s11671-017-1983-2.
[239] Lu, Nianduan, Li, Ling, Gao, Nan, Liu, Ming. A unified description of thermal transport performance in disordered organic semiconductors. ORGANIC ELECTRONICS[J]. 2017, 41: 294-300, http://dx.doi.org/10.1016/j.orgel.2016.11.019.
[240] Cao, Rongrong, Liu, Sen, Liu, Qi, Zhao, Xiaolong, Wang, Wei, Zhang, Xumeng, Wu, Facai, Wu, Quantan, Wang, Yan, Lv, Hangbing, Long, Shibing, Liu, Ming. Improvement of Device Reliability by Introducing a BEOL-Compatible TiN Barrier Layer in CBRAM. IEEE ELECTRON DEVICE LETTERS[J]. 2017, 38(10): 1371-1374, https://www.webofscience.com/wos/woscc/full-record/WOS:000413760600004.
[241] Lu, Nianduan, Li, Ling, Liu, Ming. A review of carrier thermoelectric-transport theory in organic semiconductors (vol 18, pg 19503, 2016). PHYSICAL CHEMISTRY CHEMICAL PHYSICSnull. 2017, 19(24): 16283-16283, https://www.webofscience.com/wos/woscc/full-record/WOS:000403965500076.
[242] 许高博, 徐彦楠, 习凯, 李博, 刘明. Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor. SCIENCE CHINA[J]. 2017, http://159.226.55.106/handle/172511/18179.
[243] Chen, HongYu, Brivio, Stefano, Chang, CheChia, Frascaroli, Jacopo, Hou, TuoHung, Hudec, Boris, Liu, Ming, Lv, Hangbing, Molas, Gabriel, Sohn, Joon, Spiga, Sabina, Teja, V Mani, Vianello, Elisa, Wong, H S Philip. Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication. JOURNAL OF ELECTROCERAMICS[J]. 2017, 39(1-4): 21-38, http://dx.doi.org/10.1007/s10832-017-0095-9.
[244] Luo Qing, Xu Xiaoxin, Lv Hangbing, Gong Tiancheng, Long Shibing, Liu Qi, Li Ling, Liu Ming, IEEE. Endurance characterization of the Cu-dope HfO2 based selection device with One Transistor-One Selector structure. 2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM)null. 2017, 178-179, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000409022100074.
[245] Zhao, Xiaolong, Liu, Sen, Niu, Jiebin, Liao, Lei, Liu, Qi, Xiao, Xiangheng, Lv, Hangbing, Long, Shibing, Banerjee, Writam, Li, Wenqing, Si, Shuyao, Liu, Ming. Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer. SMALL[J]. 2017, 13(35): https://www.webofscience.com/wos/woscc/full-record/WOS:000410676700002.
[246] Bi Jinshun, Zhang Feng, Duan Yuan, Xi Kai, Li Bo, Chen Li, Liu Ming, Leray JL, Mekki J, Tsiligiannis G. Radiation Effects on 1 Mb HfO2-based Resistive Memory. 2017 17TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS)null. 2017, 108-112, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000469854000020.
[247] 吴全潭, 时拓, 赵晓龙, 张续猛, 伍法才, 曹荣荣, 龙世兵, 吕杭炳, 刘琦, 刘明. 基于六角氮化硼二维薄膜的忆阻器. ACTA PHYSICA SINICA[J]. 2017, 66(21): 216801-1, [248] Wei, Wei, Chuai, Xichen, Lu, Nianduan, Wang, Yan, Li, Ling, Ye, Cong, Liu, Ming, IEEE. Simulation of doping effect for HfO2-based RRAM based on first-principles calculations. 2017 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2017)null. 2017, 21-24, [249] Chen Chuanbing, Huo Zhangxing, Zhang Kun, Yu Zhaoan, Liu Jing, Gong Tiancheng, Dong Danian, Yuan Peng, Xu Xiaoxin, Lu: Hangbing, Liu Ming, Liu Qi, Long Shibing, Luo Qing, Xie Yuanlu. BEOL Based RRAM with One Extra-mask for Low Cost, Highly Reliable Embedded Application in 28 nm Node and Beyond. Electron Devices Meeting (IEDM) 2017 IEEE Internationalnull. 2017, http://159.226.55.106/handle/172511/18289.
[250] 龙世兵, 吕杭炳, 刘琦, 吴全潭, 时拓, 赵晓龙, 张续猛, 伍法才, 曹荣荣, 刘明. 基于六角氮化硼二维薄膜的忆阻器. ACTA PHYSICA SINICA[J]. 2017, http://159.226.55.106/handle/172511/18168.
[251] Sun, Hao, Zhang, Meiyun, Li, Yu, Long, Shibing, Liu, Qi, Lv, Hangbing, Sune, Jordi, Liu, Ming. A cell-based clustering model for the reset statistics in RRAM. APPLIED PHYSICS LETTERS[J]. 2017, 110(12): http://dx.doi.org/10.1063/1.4978756.
[252] Bin-Qing Zhao, Ming-Hua Zhao, Ming Liu, Chong-Xian Yin, Hang Shu. The front-end electronics design of dose monitors for beam delivery system of Shanghai Advanced Proton Therapy Facility. 核技术:英文版[J]. 2017, 28(6): 83-1, http://lib.cqvip.com/Qikan/Article/Detail?id=7000282227.
[253] Liu Ming. Schottky barrierdiodebased on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electricalcharacteristics. Applied Physics Letters. 2017, [254] Banerjee, Writam, Cai, Wu Fa, Zhao, Xiaolong, Liu, Qi, Lv, Hangbing, Long, Shibing, Liu, Ming. Intrinsic anionic rearrangement by extrinsic control: transition of RS and CRS in thermally elevated TiN/HfO2/Pt RRAM. NANOSCALE[J]. 2017, 9(47): 18908-18917, https://www.webofscience.com/wos/woscc/full-record/WOS:000417485000040.
[255] 徐彦楠, 刘明, 习凯, 毕津顺. Total Ionization Dose Effects on Charge Trapping Memory(CTM)with Al2O3/HfO2/Al2O3 Trilayer Structure. NSREC 2017[J]. 2017, http://159.226.55.106/handle/172511/18189.
[256] 毕津顺, 刘明, 季兰龙, 李金, 习凯, 张浩浩. Single-Event-Effects Induced by Heavy Ion and Pulsed Laser on 16Mb Magneto-resistive Random Access Memory. 2017 International Workshop on Reliability of Micro- and Nano- Electronic Devices in Harsh Environmentnull. 2017, http://159.226.55.106/handle/172511/18281.
[257] 龙世兵, 罗庆, 刘明, 李泠, 刘琦, 龚天成, 许晓欣, 吕杭炳. Endurance characterization of the Cu-dope HfO2 based selection device with One Transistor-One Selector structure. 2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM)null. 2017, 178-179, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000409022100074.
[258] 张浩浩, 毕津顺, 王海滨, 呼红阳, 李金, 季兰龙, 郝乐, 于庆奎, 罗磊, 孙毅, 刘明. 磁随机存储器总剂量效应及退火特性研究. 功能材料与器件学报[J]. 2017, 49-56, http://lib.cqvip.com/Qikan/Article/Detail?id=71786781504849554849484857.
[259] Lu, Congyan, Ji, Zhuoyu, Xu, Guangwei, Lu, Nianduan, Li, Ling, Liu, Ming. Charge-transfer complex modified bottom electrodes for high performance low voltage organic field-effect transistors and circuits. ORGANIC ELECTRONICS[J]. 2017, 49: 206-211, http://dx.doi.org/10.1016/j.orgel.2017.06.047.
[260] Long Shibing, Li Junfeng, Yu Zhaoan, Liu Jing, Gao Jianfeng, Yuan Peng, Dong Danian, Lu: Hangbing, Gong Tiancheng, Xu Xiaoxin, Luo Qing, Liu Ming, Liu Qi. 8-layers 3D Vertical RRAM with Excellent Scalability towards Storage Class Memory Applications. Electron Devices Meeting(IEDM)2017 IEEE Internationalnull. 2017, http://159.226.55.106/handle/172511/18288.
[261] 李泠, 刘明, 卢年端. Thermoelectric Effect and Application of Organic Semiconductors. 2017, http://159.226.55.106/handle/172511/17763.
[262] Liu Ming, Chuai Xichen, Lu Nianduan, Wang Yan, Li Ling, Wei Wei. Simulation of doping effect for HfO2-based RRAM based on first-principles calculations. SISPAD 2017null. 2017, http://159.226.55.106/handle/172511/18283.
[263] 李博, 刘明, 毕津顺, 张锋, 段远, 习凯. Radiation Effects on 1 Mb HfO2-based Resistive Memory. RADECS 2017[J]. 2017, http://159.226.55.106/handle/172511/18188.
[264] 李泠, 刘明, 卢年端. Erratum: Universal carrier thermoelectric-transport model based on percolation theory in organic Semiconductors. PHYSICAL REVIEW B[J]. 2017, http://159.226.55.106/handle/172511/18141.
[265] 纪书江, 霍长兴, 孙海涛, 刘璟, 刘明. 基于SMIC-28 nm低功耗高精度带隙基准的研究. 微电子学与计算机[J]. 2017, 34(9): 71-76, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=6053547&detailType=1.
[266] Shen, Rongzong, Liu, Ming, Zhou, Yurong, Li, Fengchao, Wang, Huamei, Yang, Yufei, Liu, Fengzhen. PEDOT:PSS/SiNWs Hybrid Solar Cells With an Effective Nanocrystalline Silicon Back Surface Field Layer by Low Temperature Catalytic Diffusion. SOLAR RRL[J]. 2017, 1(11): https://www.webofscience.com/wos/woscc/full-record/WOS:000415056300006.
[267] Li, Leilei, Liu, Yang, Teng, Jiao, Long, Shibing, Guo, Qixun, Zhang, Meiyun, Wu, Yu, Yu, Guanghua, Liu, Qi, Lv, Hangbing, Liu, Ming. Anisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO2/Pt Resistive Switching Memory. NANOSCALE RESEARCH LETTERS[J]. 2017, 12: http://dx.doi.org/10.1186/s11671-017-1983-2.
[268] Banerjee, Writam, Liu, Qi, Long, Shibing, Lv, Hangbing, Liu, Ming. Crystal that remembers: several ways to utilize nanocrystals in resistive switching memory. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2017, 50(30): https://www.webofscience.com/wos/woscc/full-record/WOS:000405015400001.
[269] Liu, Ming, Wang, Lei, Zheng, Xiaohua, Xie, Zhigang. Zirconium-Based Nanoscale Metal-Organic Framework/Poly(epsilon-caprolactone) Mixed-Matrix Membranes as Effective Antimicrobials. ACS APPLIED MATERIALS & INTERFACES[J]. 2017, 9(47): 41512-41520, https://www.webofscience.com/wos/woscc/full-record/WOS:000417005900049.
[270] Shi, Xuewen, Lu, Nianduan, Xu, Guangwei, Cao, Jinchen, Han, Zhiheng, Yang, Guanhua, Li, Ling, Liu, Ming. An analytical Seebeck coefficient model for disordered organic semiconductors. PHYSICS LETTERS A[J]. 2017, 381(40): 3441-3444, http://dx.doi.org/10.1016/j.physleta.2017.09.006.
[271] Luo, Qing, Xu, Xiaoxin, Gong, Tiancheng, Lv, Hangbing, Dong, Danian, Ma, Haili, Yuan, Peng, 高建峰, Liu, Jing, Yu, Zhaoan, Li, Junfeng, Long, Shibing, Liu, Qi, Liu, Ming, IEEE. 8-layers 3D Vertical RRAM with Excellent Scalability towards Storage Class Memory Applications. 2017IEEEINTERNATIONALELECTRONDEVICESMEETINGIEDM[J]. 2017, [272] Zhang, Xumeng, Liu, Sen, Zhao, Xiaolong, Wu, Facai, Wu, Quantan, Wang, Wei, Cao, Rongrong, Fang, Yilin, Lv, Hangbing, Long, Shibing, Liu, Qi, Liu, Ming. Emulating Short-Term and Long-Term Plasticity of Bio-Synapse Based on Cu/a-Si/Pt Memristor. IEEE ELECTRON DEVICE LETTERS[J]. 2017, 38(9): 1208-1211, https://www.webofscience.com/wos/woscc/full-record/WOS:000408355200005.
[273] Li, Yu, Zhang, Meiyun, Long, Shibing, Teng, Jiao, Liu, Qi, Lv, Hangbing, Miranda, Enrique, Sune, Jordi, Liu, Ming. Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator. SCIENTIFIC REPORTS[J]. 2017, 7(1): http://dx.doi.org/10.1038/s41598-017-11165-5.
[274] 刘明, 张颖, 龙世兵. 新型阻变存储器的物理研究与产业化前景. 物理[J]. 2017, http://159.226.55.106/handle/172511/18177.
[275] Xu, Yannan, Bi, Jinshun, Xu, Gaobo, Xi, Kai, Li, Bo, Liu, Ming. Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor. SCIENCE CHINA-INFORMATION SCIENCES. 2017, 60(12): http://lib.cqvip.com/Qikan/Article/Detail?id=673840354.
[276] Li, Yu, Sun, Hao, Zhang, Meiyun, Long, Shibing, Liu, Qi, Lv, Hangbing, Sune, Jordi, Liu, Ming, IEEE. Statistical Analysis of "Tail Bits" Phenomena with Defect Clustering in RESET Switching Process of RRAM Devices. 2017 IEEE 24TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA)null. 2017, [277] Wu QuanTan, Shi Tuo, Zhao XiaoLong, Zhang XuMeng, Wu FaCai, Cao RongRong, Long ShiBing, Lu HangBing, Liu Qi, Liu Ming. Two-dimensional hexagonal boron nitride based memristor. ACTA PHYSICA SINICA[J]. 2017, 66(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000417418600020.
[278] Qi, Nan, Kang, Yuhang, Lin, Qipeng, Ma, Jianxu, Shi, Jingbo, Yin, Bozhi, Liu, Chang, Bai, Rui, Hu, Shang, Wang, Juncheng, Du, Jiangbing, Ma, Lin, He, Zuyuan, Liu, Ming, Zhang, Feng, Chiang, Patrick Yin, IEEE. A 51Gb/s, 320mW, PAM4 CDR with Baud-Rate Sampling for High-Speed Optical Interconnects. 2017 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC)null. 2017, 89-92, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000426511300023.
[279] 刘琦, 刘森, 龙世兵, 吕杭炳, 刘明. 阳离子基阻变存储器的研究进展. 中国材料进展[J]. 2017, 36(2): 81-87, http://lib.cqvip.com/Qikan/Article/Detail?id=671508626.
[280] Li Lei, Li Zhongpei, Liu Ming, Ma Xiaoyan, Tang Xiaoxue. Characterizing Dissolved Organic Matter (DOM) in Wastewater from Scale Pig Farms Using Three-Dimensional Excitation-Emission Matrices (3DEEM). SPECTROSCOPY AND SPECTRAL ANALYSIS[J]. 2017, 37(2): 577-583, https://www.webofscience.com/wos/woscc/full-record/WOS:000393847200046.
[281] Miao, ChunHui, Liu, Ming, Yin, ChongXian, Zhao, ZhenTang. Precise magnetic field control of the scanning magnets for the APTRON beam delivery system. NUCLEAR SCIENCE AND TECHNIQUES[J]. 2017, 28(12): http://lib.cqvip.com/Qikan/Article/Detail?id=7000388752.
[282] Tan, Hongwei, Liu, Gang, Yang, Huali, Yi, Xiaohui, Pan, Liang, Shang, Jie, Long, Shibing, Liu, Ming, Wu, Yihong, Li, RunWei. Light-Gated Memristor with Integrated Logic and Memory Functions. ACS NANO[J]. 2017, 11(11): 11298-11305, http://ir.nimte.ac.cn/handle/174433/13530.
[283] 李泠, 卢年端, 刘明. Correction: A review of carrier thermoelectric-transport theory in organic semiconductors. PHYSICAL CHEMISTRY CHEMICAL PHYSICS[J]. 2017, [284] Luo, Qing, Xu, Xiaoxin, Lv, Hangbing, Gong, Tiancheng, Long, Shibing, Liu, Qi, Li, Ling, Liu, Ming. Highly uniform and nonlinear selection device based on trapezoidal band structure for high density nano-crossbar memory array. NANO RESEARCH[J]. 2017, 10(10): 3295-3302, https://www.webofscience.com/wos/woscc/full-record/WOS:000410304500003.
[285] Chun-Hui Miao, Ming Liu, Chong-Xian Yin, Zhen-Tang Zhao. Precise magnetic field control of the scanning magnets for the APTRON beam delivery system. 核技术:英文版[J]. 2017, 28(12): 172-1, http://lib.cqvip.com/Qikan/Article/Detail?id=7000388752.
[286] Gong, Tiancheng, Luo, Qing, Xu, Xiaoxin, Yuan, Peng, Ma, Haili, Chen, Chuanbing, Liu, Qi, Long, Shibing, Lv, Hangbing, Liu, Ming. Uniformity and Retention Improvement of TaOx-Based Conductive Bridge Random Access Memory by CuSiN Interfacial Layer Engineering. IEEE ELECTRON DEVICE LETTERS[J]. 2017, 38(9): 1232-1235, http://dx.doi.org/10.1109/LED.2017.2734907.
[287] Banerjee, Writam, Liu, Qi, Lv, Hangbing, Long, Shibing, Liu, Ming. Electronic imitation of behavioral and psychological synaptic activities using TiOx/Al2O3-based memristor devices. NANOSCALE[J]. 2017, 9(38): 14442-14450, http://dx.doi.org/10.1039/c7nr04741j.
[288] Banerjee, Writam, Xu, Xiaoxin, Lv, Hangbing, Liu, Qi, Long, Shibing, Liu, Ming. Variability Improvement of TiOx/Al2O3 Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al2O3 Dielectric Material. ACS OMEGA[J]. 2017, 2(10): 6888-6895, https://doaj.org/article/1c8b9038393c43eba7fb48a363994f83.
[289] Zhang, Feng, Fan, Dongyu, Duan, Yuan, Li, Jin, Fang, Cong, Li, Yun, Han, Xiaowei, Dai, Lan, Chen, Chengying, Bi, Jinshun, Liu, Ming, Chang, MengFan, IEEE. A 130nm 1Mb HfOX Embedded RRAM Macro Using Self-Adaptive Peripheral Circuit System Techniques for 1.6X Work Temperature Range. 2017 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC)null. 2017, 173-176, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000426511300044.
[290] Yang, Lei, Gu, Wenxing, Hong, Lin, Mi, Yang, Liu, Feng, Liu, Ming, Yang, Yufei, Sharma, Bigyan, Liu, Xinfeng, Huang, Hui. High Performing Ternary Solar Cells through Forster Resonance Energy Transfer between Nonfullerene Acceptors. ACS APPLIED MATERIALS & INTERFACES[J]. 2017, 9(32): 26928-26936, https://www.webofscience.com/wos/woscc/full-record/WOS:000408178400031.
[291] 卢年端, 高南, 刘明. A UNIFED DESCRIPTION OF THERMAL TRANSPORT PERFORMANCE In DISORDERED ORGANIC SEMICONDUCTORS. ORG. ELECTR.[J]. 2016, http://159.226.55.106/handle/172511/16250.
[292] Xi Kai, Bi Jinshun, Liu Ming, Liu Jie, Wang Yan, Hou Mingdong, Jiang YL, Tang TA, Huang R. SENSITIVITY OF PROTON SINGLE EVENT EFFECT SIMULATION TOOL TO VARIATION OF INPUT PARAMETERS. 2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)null. 2016, 1197-1199, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000478951000339.
[293] Wei Wang, Yang Li, Ming Wang, 汪令飞, Qi Liu, Writam Banerjee, Ling Li, Ming Liu. A hardware neural network for handwritten digits recognition using binary RRAM as synaptic weight element. IEEE Silicon Nanoelectronics Workshopnull. 2016, [294] 卢年端, 宗旨威, 刘琦, 姬濯宇, 刘明. A new analytical electro-thermal model in 3D resistive switching memory arrays. SCIENTIA SINICA PHYSICA, MECHANICA & ASTRONOMICA[J]. 2016, 46(10): 107312-1, http://159.226.55.106/handle/172511/16248.
[295] Liu, Ming, Xu, Na, Liu, Wensen, Xie, Zhigang. Polypyrrole coated PLGA core-shell nanoparticles for drug delivery and photothermal therapy. RSC ADVANCES[J]. 2016, 6(87): 84269-84275, https://www.webofscience.com/wos/woscc/full-record/WOS:000384129300091.
[296] Lu Nianduan, Sun Pengxiao, Liu Qi, Lu: Hangbing, Long Shibing, Liu Ming. Thermal effect on endurance performance for 3-dimensional RRAM crossbar array. CHINESE PHYSICS B[J]. 2016, http://159.226.55.106/handle/172511/16247.
[297] 谢凯毅, 王湾, 刘璟, 霍长兴, 谢元禄, 孙海涛, 张坤, 毕津顺, 刘明. Flash存储器中负压电荷泵的研究与设计. 微电子学与计算机[J]. 2016, 33(12): 34-37, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=5854906&detailType=1.
[298] Han, Zhiheng, Xu, Guangwei, Wang, Wei, Lu, Congyan, Lu, Nianduan, Ji, Zhuoyu, Li, Ling, Liu, Ming. Surface potential measurement on contact resistance of amorphous-InGaZnO thin film transistors by Kelvin probe force microscopy. APPLIED PHYSICS LETTERS[J]. 2016, 109(2): http://159.226.55.106/handle/172511/16249.
[299] Lu, Nianduan, Li, Ling, Gao, Nan, Liu, Ming. Understanding electrical-thermal transport characteristics of organic semiconductors: Violation of Wiedemann-Franz law. JOURNAL OF APPLIED PHYSICS[J]. 2016, 120(19): http://159.226.55.106/handle/172511/16243.
[300] Zhang, Meiyun, Long, Shibing, Li, Yang, Liu, Qi, Lv, Hangbing, Miranda, Enrique, Sune, Jordi, Liu, Ming. Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM Device. NANOSCALE RESEARCH LETTERS[J]. 2016, 11: http://159.226.55.106/handle/172511/16237.
[301] Liu, Sen, Wang, Wei, Li, QingJiang, Zhao, XiaoLong, Li, Nan, Xu, Hui, Liu, Qi, Liu, Ming. Highly improved resistive switching performances of the self-doped Pt/HfO2:Cu/Cu devices by atomic layer deposition. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY[J]. 2016, 59(12): http://159.226.55.106/handle/172511/16232.
[302] 龙世兵, 刘明. A new compact model for bipolar RRAMs based on truncated-cone conductive filaments—a Verilog-A approach. SEMICOND. SCI. TECHNOL[J]. 2016, http://159.226.55.106/handle/172511/16241.
[303] Niu, Jiebin, Zhang, Meiyun, Li, Yang, Long, Shibing, Lv, Hangbing, Liu, Qi, Liu, Ming. Highly scalable resistive switching memory in metal nanowire crossbar arrays fabricated by electron beam lithography. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B[J]. 2016, 34(2): https://www.webofscience.com/wos/woscc/full-record/WOS:000376782200005.
[304] Gao, Nan, Li, Ling, Lu, Nianduan, Xie, Changqing, Liu, Ming, Baessler, Heinz. Unified percolation model for bipolaron-assisted organic magnetoresistance in the unipolar transport regime. PHYSICAL REVIEW B[J]. 2016, 94(7): http://159.226.55.106/handle/172511/16246.
[305] Zhang, Haohao, Bi, Jinshun, Wang, Haibin, Hu, Hongyang, Li, Jin, Ji, Lanlong, Liu, Ming. Study of total ionizing dose induced read bit errors in magneto-resistive random access memory. MICROELECTRONICS RELIABILITY[J]. 2016, 67: 104-110, http://dx.doi.org/10.1016/j.microrel.2016.10.013.
[306] Lu, Congyan, Ji, Zhuoyu, Xu, Guangwei, Wang, Wei, Wang, Lingfei, Han, Zhiheng, Li, Ling, Liu, Ming. Progress in flexible organic thin-film transistors and integrated circuits. SCIENCE BULLETIN[J]. 2016, 61(14): 1081-1096, http://dx.doi.org/10.1007/s11434-016-1115-x.
[307] Luo, Qing, Xu, Xiaoxin, Liu, Hongtao, Lv, Hangbing, Gong, Tiancheng, Long, Shibing, Liu, Qi, Sun, Haitao, Banerjee, Writam, Li, Ling, 高建峰, Lu, Nianduan, Liu, Ming. Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays. NANOSCALE[J]. 2016, 8(34): 15629-15636, http://dx.doi.org/10.1039/C6NR02029A.
[308] Lu, Nianduan, Li, Ling, Banerjee, Writam, Liu, Ming. Physical model of Seebeck coefficient under surface dipole effect in organic thin-film transistors. ORGANIC ELECTRONICS[J]. 2016, 29: 27-32, http://dx.doi.org/10.1016/j.orgel.2015.11.028.
[309] Meiyun Zhang, Shibing Long, Yang Li, Qi Liu, Hangbing Lv, Enrique Miranda, Jordi Suñé, Ming Liu. Analysis on the Filament Structure Evolution in Reset Transition of Cu 2. NANOSCALE RESEARCH LETTERS. 2016, 11(1): http://dx.doi.org/10.1186/s11671-016-1484-8.
[310] Lu, Nianduan, Sun, Pengxiao, Li, Ling, Liu, Qi, Long, Shibing, Lv, Hangbing, Liu, Ming. Thermal effect on endurance performance of 3-dimensional RRAM crossbar array. CHINESE PHYSICS B[J]. 2016, 25(5): https://www.webofscience.com/wos/woscc/full-record/WOS:000375681800039.
[311] Wang, Lingfei, Wang, Wei, Xu, Guangwei, Ji, Zhuoyu, Lu, Nianduan, Li, Ling, Liu, Ming. Analytical carrier density and quantum capacitance for graphene. APPLIED PHYSICS LETTERS[J]. 2016, 108(1): http://159.226.55.106/handle/172511/16251.
[312] Lu Nianduan, Liu Ming. A review of carrier thermoelectric-transport theory in organic semiconductors. PHYS.CHEM.CHEM.PHYS.[J]. 2016, http://159.226.55.106/handle/172511/16242.
[313] Liu, Ming, Li, Zhongpei, Zhang, Taolin. Changes of soil ecological stoichiometric ratios under different land uses in a small catchment of subtropical China. ACTA AGRICULTURAE SCANDINAVICA SECTION B-SOIL AND PLANT SCIENCE[J]. 2016, 66(1): 67-74, https://www.webofscience.com/wos/woscc/full-record/WOS:000364542600006.
[314] 许晓欣, 罗庆, 龚天成, 吕杭炳, 龙世兵, 刘琦, 刘明. Fully CMOS Compatible 3D Vertical RRAM with Self-aligned Self-selective Cell enabling sub-5nm scaling. 2016, http://159.226.55.106/handle/172511/16345.
[315] 张美芸, 王国明, 余兆安, 李阳, 许定林, 吕杭炳, 刘琦, 刘明. The Statistics of Set Time of Oxide-based Resistive Switching Memory. 2016, http://159.226.55.106/handle/172511/16343.
[316] Liu, Sen, Lu, Nianduan, Zhao, Xiaolong, Xu, Hui, Banerjee, Writam, Lv, Hangbing, Long, Shibing, Li, Qingjiang, Liu, Qi, Liu, Ming. Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory. ADVANCED MATERIALS[J]. 2016, 28(48): 10623-+, http://159.226.55.106/handle/172511/16231.
[317] 张美芸, 李阳, 刘琦, 吕杭炳, 刘明. Current compliance impact on the instability of HfO2-based RRAM devices. 2016, http://159.226.55.106/handle/172511/16344.
[318] 宗旨威, 孙鹏霄, 刘琦, 吕杭炳, 龙世兵, 刘明. Thermal effect and Compact model in threedimensional three dimensional. SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2016[J]. 2016, http://159.226.55.106/handle/172511/16254.
[319] Ji, Yanfeng, Hui, Fei, Shi, Yuanyuan, Iglesias, Vanessa, Lewis, David, Niu, Jiebin, Long, Shibing, Liu, Ming, Hofer, Alexander, Frammelsberger, Werner, Benstetter, Guenther, Scheuermann, Andrew, McIntyre, Paul C, Lanza, Mario. Characterization of the photocurrents generated by the laser of atomic force microscopes. REVIEW OF SCIENTIFIC INSTRUMENTS[J]. 2016, 87(8): http://159.226.55.106/handle/172511/16240.
[320] 龙世兵, 刘琦, 吕杭炳, 刘明. 阻变存储器研究进展. 中国科学. 物理学, 力学, 天文学[J]. 2016, 46(10): 107311-1, https://www.sciengine.com/doi/10.1360/SSPMA2016-00293.
[321] Lu, Nianduan, Li, Ling, Liu, Ming. A review of carrier thermoelectric-transport theory in organic semiconductors. PHYSICAL CHEMISTRY CHEMICAL PHYSICSnull. 2016, 18(29): 19503-19525, https://www.webofscience.com/wos/woscc/full-record/WOS:000380343100001.
[322] Wang, Lingfei, Peng, Songang, Wang, Wei, Xu, Guangwei, Ji, Zhuoyu, Lu, Nianduan, Li, Ling, Jin, Zhi, Liu, Ming. Surface-potential-based physical compact model for graphene field effect transistor. JOURNAL OF APPLIED PHYSICS[J]. 2016, 120(8): http://159.226.55.106/handle/172511/16253.
[323] Wang Yan, Li Yang, Liu Qi, Bi Jinshun, Liu Jing, Sun Haitao, Lv Hangbing, Long Shibing, Xi Kai, Liu Ming, IEEE. The Heavy Ion Radiation effects on the Pt/HfO2/Ti Resistive Switching Memory. 2016 16TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS)null. 2016, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000450759400022.
[324] Rong, Jingjing, Zheng, Houfeng, Liu, Ming, Hu, Xu, Wang, Tao, Zhang, Xingwei, Jin, Feng, Wang, Li. Probiotic and anti-inflammatory attributes of an isolate Lactobacillus helveticus NS8 from Mongolian fermented koumiss. BMC MICROBIOLOGY[J]. 2015, 15(1): http://dx.doi.org/10.1186/s12866-015-0525-2.
[325] Li, Yang, Long, Shibing, Liu, Yang, Hu, Chen, Teng, Jiao, Liu, Qi, Lv, Hangbing, Sune, Jordi, Liu, Ming. Conductance Quantization in Resistive Random Access Memory. NANOSCALE RESEARCH LETTERS[J]. 2015, 10(1): http://www.irgrid.ac.cn/handle/1471x/1092104.
[326] Li, Ling, Gao, Nan, Lu, Nianduan, Liu, Ming, Baessler, Heinz. Spin diffusion in disordered organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 92(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000367374700001.
[327] 罗庆, 许晓欣, Lv Hangbing, 龚天成, 龙世兵, 刘琦, 高建峰, 刘明. Demonstration of 3D Vertical RRAM with Ultra Low-leakage, High-selectivity and Self-compliance Memory Cells. Tech. Dig.-Int. Electron Devices Meet (IEDM)null. 2015, [328] Lu, Nianduan, Li, Ling, Liu, Ming. Universal carrier thermoelectric-transport model based on percolation theory in organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 91(19): http://www.irgrid.ac.cn/handle/1471x/1092088.
[329] LIU Hong-Tao, YANG Bao-He, LV Hang-Bing, XU Xiao-Xin, LUO Qing, WANG Guo-Ming, ZHANG Mei-Yun, LONG Shi-Bing, LIU Qi, LIU Ming. Effect of Pulse and dc Formation on the Performance of One-Transistor and One-Resistor Resistance Random Access Memory Devices. 中国物理快报:英文版[J]. 2015, 157-159, http://lib.cqvip.com/Qikan/Article/Detail?id=664021880.
[330] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Wang, Ming, Liu, Qi, Lv, Hangbing, Long, Shibing, Liu, Ming. A novel method of identifying the carrier transport path in metal oxide resistive random access memory. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2015, 48(6): http://dx.doi.org/10.1088/0022-3727/48/6/065101.
[331] Ma, Xiaoyan, Liu, Ming, Li, Zhongpei. Changes in microbial properties and community composition in acid soils receiving wastewater from concentrated animal farming operations. APPLIED SOIL ECOLOGY[J]. 2015, 90: 11-17, http://dx.doi.org/10.1016/j.apsoil.2015.01.012.
[332] 王宏, 王伟, 孙鹏霄, 马晓华, 李泠, 刘明, 郝跃. Contact Length Scaling in Staggered Organc. IEEE ELECTRON DEVICE LETTERS[J]. 2015, http://159.226.55.106/handle/172511/16064.
[333] Liu HongTao, Yang BaoHe, Lv HangBing, Xu XiaoXin, Luo Qing, Wang GuoMing, Zhang MeiYun, Long ShiBing, Liu Qi, Liu Ming. Effect of Pulse and dc Formation on the Performance of One-Transistor and One-Resistor Resistance Random Access Memory Devices. CHINESE PHYSICS LETTERS[J]. 2015, 32(2): http://lib.cqvip.com/Qikan/Article/Detail?id=664021880.
[334] Wang, Guoming, Long, Shibing, Yu, Zhaoan, Zhang, Meiyun, Ye, Tianchun, Li, Yang, Xu, Dinglin, Lv, Hangbing, Liu, Qi, Wang, Ming, Xu, Xiaoxin, Liu, Hongtao, Yang, Baohe, Sune, Jordi, Liu, Ming. Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation. APPLIED PHYSICS LETTERS[J]. 2015, 106(9): http://dx.doi.org/10.1063/1.4907604.
[335] Lv, Hangbing, Xu, Xiaoxin, Sun, Pengxiao, Liu, Hongtao, Luo, Qing, Liu, Qi, Banerjee, Writam, Sun, Haitao, Long, Shibing, Li, Ling, Liu, Ming. Atomic View of Filament Growth in Electrochemical Memristive Elements. SCIENTIFIC REPORTS[J]. 2015, 5: http://dx.doi.org/10.1038/srep13311.
[336] Sun, Pengxiao, Lu, Nianduan, Li, Ling, Li, Yingtao, Wang, Hong, Lv, Hangbing, Liu, Qi, Long, Shibing, Liu, Su, Liu, Ming. Thermal crosstalk in 3-dimensional RRAM crossbar array. SCIENTIFIC REPORTS[J]. 2015, 5: http://www.irgrid.ac.cn/handle/1471x/1092084.
[337] Yang, Xiaonan, Zheng, Zhiwei, Wang, Yan, Huo, Zongliang, Jin, Lei, Jiang, Dandan, Wang, Zhongyong, Chiu, Shengfen, Wu, Hanming, Liu, Ming. Gate Bias Dependence of Complex Random Telegraph Noise Behavior in 65-nm NOR Flash Memory. IEEE ELECTRON DEVICE LETTERS[J]. 2015, 36(1): 26-28, http://dx.doi.org/10.1109/LED.2014.2367104.
[338] Huo, Zongliang, Jin, Lei, Han, Yulong, Li, Xinkai, Ye, Tianchun, Liu, Ming. Low-temperature post-deposition annealing investigation for 3D charge trap flash memory by Kelvin probe force microscopy. APPLIEDPHYSICSAMATERIALSSCIENCEPROCESSING[J]. 2015, 118(1): 1-6, https://www.webofscience.com/wos/woscc/full-record/WOS:000347686500001.
[339] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Wang, Ming, Liu, Qi, Lv, Hangbing, Long, Shibing, Banerjee, Writam, Liu, Ming. Carrier-transport-path-induced switching parameter fluctuation in oxide-based resistive switching memory. MATERIALS RESEARCH EXPRESS[J]. 2015, 2(4): http://dx.doi.org/10.1088/2053-1591/2/4/046304.
[340] Lu, Nianduan, Li, Ling, Banerjee, Writam, Sun, Pengxiao, Gao, Nan, Liu, Ming. Charge carrier hopping transport based on Marcus theory and variable-range hopping theory in organic semiconductors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(4): http://www.irgrid.ac.cn/handle/1471x/1092087.
[341] Wang, Ming, Zhou, Jiantao, Yang, Yuchao, Gaba, Siddharth, Liu, Ming, Lu, Wei D. Conduction mechanism of a TaOx-based selector and its application in crossbar memory arrays. NANOSCALE[J]. 2015, 7(11): 4964-4970, http://www.irgrid.ac.cn/handle/1471x/1092103.
[342] Cao HuaMin, Huo ZongLiang, Wang Yu, Li Ting, Liu Jing, Jin Lei, Jiang DanDan, Zhang DengJun, Li Di, Liu Ming. A write buffer design based on stable and area-saving embedded SRAM for flash applications. SCIENCE CHINA-TECHNOLOGICAL SCIENCES[J]. 2015, 58(2): 357-361, https://www.webofscience.com/wos/woscc/full-record/WOS:000349427300019.
[343] Zhang, Meiyun, Wang, Guoming, Long, Shibing, Yu, Zhaoan, Li, Yang, Xu, Dinglin, Lv, Hangbing, Liu, Qi, Miranda, Enrique, Sune, Jordi, Liu, Ming. A Physical Model for the Statistics of the Set Switching Time of Resistive RAM Measured With the Width-Adjusting Pulse Operation Method. IEEE ELECTRON DEVICE LETTERS[J]. 2015, 36(12): 1303-1306, http://dx.doi.org/10.1109/LED.2015.2493540.
[344] Guoming Wang, Shibing Long, Zhaoan Yu, Meiyun Zhang, Yang Li, Dinglin Xu, Hangbing Lv, Qi Liu, Xiaobing Yan, Ming Wang, Xiaoxin Xu, Hongtao Liu, Baohe Yang, Ming Liu. Impact of program. NANOSCALE RESEARCH LETTERS. 2015, 10(1): http://dx.doi.org/10.1186/s11671-014-0721-2.
[345] Xu, Xiaoxin, Lv, Hangbing, Liu, Hongtao, Gong, Tiancheng, Wang, Guoming, Zhang, Meiyun, Li, Yang, Liu, Qi, Long, Shibing, Liu, Ming. Superior Retention of Low-Resistance State in Conductive Bridge Random Access Memory With Single Filament Formation. IEEE ELECTRON DEVICE LETTERS[J]. 2015, 36(2): 129-131, http://dx.doi.org/10.1109/LED.2014.2379961.
[346] Lv, Hangbing, Xu, Xiaoxin, Liu, Hongtao, Liu, Ruoyu, Liu, Qi, Banerjee, Writam, Sun, Haitao, Long, Shibing, Li, Ling, Liu, Ming. Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory. SCIENTIFIC REPORTS[J]. 2015, 5: http://dx.doi.org/10.1038/srep07764.
[347] Yang Xiaonan, Liu Jing, Zheng Zhiwei, Wang Yan, Jiang Dandan, Chiu Shengfen, Wu Hanming, Liu Ming, IEEE. Impact of P/E Cycling on Read Current Fluctuation of NOR Flash Memory Cell: A Microscopic Perspective Based on Low Frequency Noise Analysis. 2015 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)null. 2015, [348] Banerjee, Writam, Xu, Xiaoxin, Liu, Hongtao, Lv, Hangbing, Liu, Qi, Sun, Haitao, Long, Shibing, Liu, Ming. Occurrence of Resistive Switching and Threshold Switching in Atomic Layer Deposited Ultrathin (2 nm) Aluminium Oxide Crossbar Resistive Random Access Memory. IEEE ELECTRON DEVICE LETTERS[J]. 2015, 36(4): 333-335, http://dx.doi.org/10.1109/LED.2015.2407361.
[349] Liu, Ming, Yin, Chongxian, Chu, Kecheng, Zhao, Liying, Shu, Hang, Dai, Xiaolei, Zhang, Manzhou, Miao, Chunhui. A scheme design of collimator for gantry in proton therapy facility. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT[J]. 2015, 791: 47-53, http://ir.sinap.ac.cn/handle/331007/24384.
[350] Zong, Zhiwei, Li, Ling, Jang, Jin, Lu, Nianduan, Liu, Ming. Analytical surface-potential compact model for amorphous-IGZO thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 117(21): http://dx.doi.org/10.1063/1.4922181.
[351] Xu, Guangwei, Lu, Nianduan, Wang, Wei, Gao, Nan, Ji, Zhuoyu, Li, Ling, Liu, Ming. Universal description of exciton diffusion length in organic photovoltaic cell. ORGANIC ELECTRONICS[J]. 2015, 23: 53-56, http://dx.doi.org/10.1016/j.orgel.2015.04.006.
[352] Liu LiFang, Wu Dong, Liu XueMei, Huo ZongLiang, Liu Ming, Pan LiYang. A 1G-cell floating-gate NOR flash memory in 65 nm technology with 100 ns random access time. SCIENCE CHINA-INFORMATION SCIENCES[J]. 2015, 58(4): https://www.webofscience.com/wos/woscc/full-record/WOS:000353817800009.
[353] Yang, Xiaonan, Liu, Jing, Zheng, Zhiwei, Wang, Yan, Jiang, Dandan, Wang, Zhongyong, Fan, Wenbing, Liu, Ming. Extraction of Position and Energy Level of Oxide Trap Generating Random Telegraph Noise in 65 nm NOR Flash Memory. INTEGRATED FERROELECTRICS[J]. 2015, 164(1): 103-111, https://www.webofscience.com/wos/woscc/full-record/WOS:000371295300014.
[354] Wang, Long, Ji, Zhuoyu, Lu, Congyan, Wang, Wei, Guo, Jingwei, Li, Ling, Li, Dongmei, Liu, Ming. Combining Bottom-Up and Top-Down Segmentation: A Way to Realize High-Performance Organic Circuit. IEEE ELECTRON DEVICE LETTERS[J]. 2015, 36(7): 684-686, http://www.irgrid.ac.cn/handle/1471x/1092098.
[355] Wang, Lingfei, Li, Ling, Lu, Nianduan, Ji, Zhuoyu, Wang, Wei, Zong, Zhiwei, Xu, Guangwei, Liu, Ming. An Improved Cut-Off Frequency Model With a Modified Small-Signal Equivalent Circuit in Graphene Field-Effect Transistors. IEEE ELECTRON DEVICE LETTERS[J]. 2015, 36(12): 1351-1354, https://www.webofscience.com/wos/woscc/full-record/WOS:000365295300027.
[356] Sun, Pengxiao, Li, Ling, Lu, Nianduan, Lv, Hangbing, Liu, Ming, Liu, Su. Physical model for electroforming process in valence change resistive random access memory. JOURNAL OF COMPUTATIONAL ELECTRONICS[J]. 2015, 14(1): 146-150, https://www.webofscience.com/wos/woscc/full-record/WOS:000350554200016.
[357] Xu, Xiaoxin, Lv, Hangbing, Li, Yuxiang, Liu, Hongtao, Wang, Ming, Liu, Qi, Long, Shibing, Liu, Ming. Degradation of Gate Voltage Controlled Multilevel Storage in One Transistor One Resistor Electrochemical Metallization Cell. IEEE ELECTRON DEVICE LETTERS[J]. 2015, 36(6): 555-557, http://dx.doi.org/10.1109/LED.2015.2427393.
[358] Zhang, Meiyun, Long, Shibing, Wang, Guoming, Xu, Xiaoxin, Li, Yang, Liu, Qi, Lv, Hangbing, Lian, Xiaojuan, Miranda, Enrique, Sune, Jordi, Liu, Ming. Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure (vol 105, 193501, 2014). APPLIED PHYSICS LETTERSnull. 2015, 106(15): https://www.webofscience.com/wos/woscc/full-record/WOS:000353160700052.
[359] Wang, Wei, Li, Ling, Lu, Congyan, Liu, Yu, Lv, Hangbing, Xu, Guangwei, Ji, Zhuoyu, Liu, Ming. Analysis of the contact resistance in amorphous InGaZnO thin film transistors. APPLIED PHYSICS LETTERS[J]. 2015, 107(6): http://www.irgrid.ac.cn/handle/1471x/1092106.
[360] Xu, Guangwei, Wang, Wei, Wang, Long, Zong, Zhiwei, Lu, Congyan, Wang, Lingfei, Banerjee, Writam, Ji, Zhuoyu, Wang, Hong, Li, Ling, Liu, Ming. A Surface Potential-Based Gate-Leakage Current Model for Organic Thin-Film Transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2015, 62(12): 4219-4224, https://www.webofscience.com/wos/woscc/full-record/WOS:000365225700044.
[361] Xu, Xiaoxin, Lv, Hangbing, Liu, Hongtao, Luo, Qing, Gong, Tiancheng, Wang, Ming, Wang, Guoming, Zhang, Meiyun, Li, Yang, Liu, Qi, Long, Shibing, Liu, Ming. Investigation of LRS dependence on the retention of HRS in CBRAM. NANOSCALE RESEARCH LETTERS[J]. 2015, 10(1): http://dx.doi.org/10.1186/s11671-015-0771-0.
[362] Liu LiFang, Wu Dong, Liu XueMei, Huo ZongLiang, Liu Ming, Pan LiYang. A 1G-cell floating-gate NOR flash memory in 65 nm technology with 100 ns random access time. SCIENCE CHINA-INFORMATION SCIENCES[J]. 2015, 58(4): https://www.webofscience.com/wos/woscc/full-record/WOS:000353817800009.
[363] Li, Chao, Yao, Yuan, Shen, Xi, Wang, Yanguo, Li, Junjie, Gu, Changzhi, Yu, Richeng, Liu, Qi, Liu, Ming. Dynamic observation of oxygen vacancies in hafnia layer by in situ transmission electron microscopy. NANO RESEARCH[J]. 2015, 8(11): 3571-3579, http://ir.iphy.ac.cn/handle/311004/60647.
[364] Wang, Long, Lu, Nianduan, Li, Ling, Ji, Zhuoyu, Banerjee, Writam, Liu, Ming. Compact model for organic thin-film transistor with Gaussian density of states. AIP ADVANCES[J]. 2015, 5(4): http://dx.doi.org/10.1063/1.4918622.
[365] Bi, Chong, Liu, Ming. Reversal-mechanism of perpendicular switching induced by an in-plane current. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS[J]. 2015, 381: 258-262, http://dx.doi.org/10.1016/j.jmmm.2015.01.010.
[366] Liu Ming, Fu BiHong, Dong YanFang. Neotectonics of NE-striking fault zones and earthquake risk in the Yunnan-Myanmar block, southeastern margin of the Tibetan plateau. CHINESE JOURNAL OF GEOPHYSICS-CHINESE EDITION[J]. 2015, 58(11): 4174-4186, http://ir.iggcas.ac.cn/handle/132A11/7553.
[367] Wang, Guoming, Long, Shibing, Yu, Zhaoan, Zhang, Meiyun, Li, Yang, Xu, Dinglin, Lv, Hangbing, Liu, Qi, Yan, Xiaobing, Wang, Ming, Xu, Xiaoxin, Liu, Hongtao, Yang, Baohe, Liu, Ming. Impact of program/erase operation on the performances of oxide-based resistive switching memory. NANOSCALE RESEARCH LETTERS[J]. 2015, 10: http://www.irgrid.ac.cn/handle/1471x/1092111.
[368] Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect and energetic disorder dependence of Seebeck coefficient in organic transistors. ORGANIC ELECTRONICS[J]. 2015, 16(16): 113-117, http://dx.doi.org/10.1016/j.orgel.2014.11.003.
[369] 罗庆, 许晓欣, 吕杭炳, 刘明. Cu BEOL Compatible Selector with High Selectivity (>107), Extremely Low Off-current (~pA) and High Endurance (>1010). 2015, http://10.10.10.126/handle/311049/15312.
[370] Zhang, Keke, Lu, Nianduan, Li, Ling, Liu, Qi, Liu, Ming. Resistance-switching mechanism of SiO2:Pt-based Mott memory. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000367535100049.
[371] Liu, Hongtao, Lv, Hangbin, Yang, Baohe, Xu, Xiaoxin, Liu, Ruoyu, Liu, Qi, Long, Shibing, Liu, Ming. Uniformity Improvement in 1T1R RRAM With Gate Voltage Ramp Programming. IEEEELECTRONDEVICELETTERS[J]. 2014, 35(12): 1224-1226, http://dx.doi.org/10.1109/LED.2014.2364171.
[372] Sun, Pengxiao, Li, Ling, Lu, Nianduan, Li, Yingtao, Wang, Ming, Xie, Hongwei, Liu, Su, Liu, Ming. Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory. JOURNAL OF COMPUTATIONAL ELECTRONICS[J]. 2014, 13(2): 432-438, http://dx.doi.org/10.1007/s10825-013-0552-x.
[373] Li, Ling, Lu, Nianduan, Liu, Ming, Baessler, Heinz. General Einstein relation model in disordered organic semiconductors under quasiequilibrium. PHYSICAL REVIEW B[J]. 2014, 90(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000346376500001.
[374] Zhang, Meiyun, Long, Shibing, Wang, Guoming, Li, Yang, Xu, Xiaoxin, Liu, Hongtao, Liu, Ruoyu, Wang, Ming, Li, Congfei, Sun, Pengxiao, Sun, Haitao, Liu, Qi, Lu, Hangbing, Liu, Ming. An overview of the switching parameter variation of RRAM. CHINESE SCIENCE BULLETIN[J]. 2014, 59(36): 5324-5337, https://www.webofscience.com/wos/woscc/full-record/WOS:000345381500023.
[375] Zhao-Ming Liu, Lei Feng, Jie Hou, Xia Lv, Jing Ning, Guang-Bo Ge, Ke-Wei Wang, Jing-Nan Cui, Ling Yang. A ratiometric fluorescent sensor for highly selective detection of human carboxylesterase 2 and its application in living cells. SENSORS & ACTUATORS: B. CHEMICAL. 2014, 205: 151-157, http://dx.doi.org/10.1016/j.snb.2014.08.066.
[376] 刘明. Thermoelectric Seebeck effect in oxide-based resistive switching memory. NATURE COMMUNICATIONS[J]. 2014, 5: 4598.1-4598.6, http://dx.doi.org/10.1038/ncomms5598.
[377] 龙世兵, 刘明, 谢宏伟, 刘琦, 吕杭炳, 卢年端, 王明, 李颖弢. 新型阻变存储技术. 2014, http://159.226.55.106/handle/172511/18305.
[378] Yang Xiaonan, Huo Zongliang, Jin Lei, Wang Zongyong, Jiang DanDan, Wang Yan, Liu Ming, IEEE, Tang TA, Zhou J. PROGRAM CHARGE EFFECT ON RANDOM TELEGRAPH NOISE BEHAVIOR IN MULTI-LEVEL FLOATING GATE FLASH MEMORY. 2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)null. 2014, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000380478500334.
[379] Chu Yuqiong, Huo Zongliang, Han Yulong, Chen Guoxing, Zhang Dong, Li Xinkai, Liu Ming. Investigation of charge loss characteristics of HfO2 annealed in N-2 or O-2 ambient. JOURNAL OF SEMICONDUCTORS[J]. 2014, 083004-1, [380] Li, Ling, Lu, Nianduan, Liu, Ming. Field Effect Mobility Model in Oxide Semiconductor Thin Film Transistors With Arbitrary Energy Distribution of Traps. IEEE ELECTRON DEVICE LETTERS[J]. 2014, 35(2): 226-228, http://www.irgrid.ac.cn/handle/1471x/1092033.
[381] 张美芸, 龙世兵, 王国明, 李阳, 许晓欣, 刘红涛, 王明, 孙鹏霄, 孙海涛, 刘琦, 吕杭炳, 刘明. Study of the set statistical characteristics in the Cu/HfO2/Pt-based RRAM device. Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference onnull. 2014, http://159.226.55.106/handle/172511/16028.
[382] Li, Ling, Lu, Nianduan, Liu, Ming. Physical origin of nonlinear transport in organic semiconductor at high carrier densities. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000344589400089.
[383] Li, Ling, Lu, Nianduan, Liu, Ming. Limitation of the concept of transport energy in disordered organic semiconductors. EPL[J]. 2014, 106(1): 17005-1-17005-5, https://www.webofscience.com/wos/woscc/full-record/WOS:000335657300016.
[384] Chen, Guoxing, Huo, Zongliang, Jin, Lei, Zhang, Dong, Zhao, Shengjie, Han, Yulong, Liu, Su, Liu, Ming. Low temperature atomic layer deposited HfO2 film for high performance charge trapping flash memory application. SEMICONDUCTOR SCIENCE AND TECHNOLOGY[J]. 2014, 29(4): https://www.webofscience.com/wos/woscc/full-record/WOS:000333275600021.
[385] Chen, Guoxing, Huo, Zongliang, Jin, Lei, Han, Yulong, Li, Xinkai, Liu, Su, Liu, Ming. Metal Floating Gate Memory Device With SiO2/HfO2 Dual-Layer as Engineered Tunneling Barrier. IEEE ELECTRON DEVICE LETTERS[J]. 2014, 35(7): 744-746, http://dx.doi.org/10.1109/LED.2014.2320971.
[386] Zhang, Meiyun, Long, Shibing, Wang, Guoming, Xu, Xiaoxin, Li, Yang, Liu, Qi, Lv, Hangbing, Lian, Xiaojuan, Miranda, Enrique, Sune, Jordi, Liu, Ming. Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure. APPLIEDPHYSICSLETTERS[J]. 2014, 105(19): https://www.webofscience.com/wos/woscc/full-record/WOS:000345216100075.
[387] Lei XiaoYi, Liu HongXia, Gao HaiXia, Yang HaNi, Wang GuoMing, Long ShiBing, Ma XiaoHua, Liu Ming. Resistive switching characteristics of Ti/ZrO2/Pt RRAM device. CHINESE PHYSICS B[J]. 2014, 23(11): https://www.webofscience.com/wos/woscc/full-record/WOS:000345124600069.
[388] 傅家谟. Phase distribution, sources and risk assessment of PAHs, NPAHs and OPAHs in a rural site of Pearl River Delta region, China. ATMOSPHERIC POLLUTION RESEARCH[J]. 2014, 5(2): 210-218, http://dx.doi.org/10.5094/APR.2014.026.
[389] Yang, Xiaonan, Huo, Zongliang, Wang, Zongyong, Liu, Ming. A Study of P/E Cycling Impaction on Drain Disturb for 65nm NOR Flash Memories by Low Frequency Noise Analyze. INTEGRATED FERROELECTRICS[J]. 2014, 154(1): 50-56, https://www.webofscience.com/wos/woscc/full-record/WOS:000336495600007.
[390] Chen, Guoxing, Huo, Zongliang, Han, Yulong, Li, Xinkai, Zhang, Dong, Liu, Su, Liu, Ming. Effect of Pre-annealing to Blocking Oxide on the Performance of Dual Trapping-layer Engineered Charge Trapping Memory. INTEGRATED FERROELECTRICS[J]. 2014, 151(1): 56-60, https://www.webofscience.com/wos/woscc/full-record/WOS:000337329100009.
[391] Hu, Xiuli, Guan, Xingang, Li, Jing, Pei, Qing, Liu, Ming, Xie, Zhigang, Jing, Xiabin. Hybrid polymer micelles capable of cRGD targeting and pH-triggered surface charge conversion for tumor selective accumulation and promoted uptake. CHEMICAL COMMUNICATIONS[J]. 2014, 50(65): 9188-9191, http://www.irgrid.ac.cn/handle/1471x/934695.
[392] Zhang Dong, Huo ZongLiang, Jin Lei, Han YuLong, Chu YuQiong, Chen GuoXing, Liu Ming, Yang BaoHe. Charge Loss Characteristics of Different Al Contents in a HfAlO Trapping Layer Investigated by Variable Temperature Kelvin Probe Force Microscopy. CHINESE PHYSICS LETTERS[J]. 2014, 31(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000337500700052.
[393] Li Xinkai, Huo Zongliang, Jin Lei, Wang Yan, Liu Jing, Jiang Dandan, Yang Xiaonan, Liu Ming, IEEE, Tang TA, Zhou J. INVESTIGATION OF CHARGE LOSS MECHANISMS IN 3D TANOS CYLINDRICAL JUNCTION-LESS CHARGE TRAPPING MEMORY. 2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)null. 2014, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000380478500216.
[394] 王国明, 张美芸, 龙世, 兵刘明. IMPACT OF STRESS TIME OF PROGRAM OPERATION ON THE ENDURANCE PERFORMANCE. Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference onnull. 2014, http://159.226.55.106/handle/172511/16029.
[395] Zhang, Meiyun, Long, Shibing, Wang, Guoming, Liu, Ruoyu, Xu, Xiaoxin, Li, Yang, Xu, Dinlin, Liu, Qi, Lv, Hangbing, Miranda, Enrique, Sune, Jordi, Liu, Ming. Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory. NANOSCALE RESEARCH LETTERS[J]. 2014, 9: https://www.webofscience.com/wos/woscc/full-record/WOS:000353036300003.
[396] Sun, Haitao, Liu, Qi, Long, Shibing, Lv, Hangbing, Banerjee, Writam, Liu, Ming. Multilevel unipolar resistive switching with negative differential resistance effect in Ag/SiO2/Pt device. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(15): http://www.irgrid.ac.cn/handle/1471x/1092024.
[397] Wang, Yu, Huo, Zongliang, Cao, Huamin, Li, Ting, Liu, Jing, Pan, Liyang, Zhang, Xing, Yang, Yun, Qiu, Shenfeng, Wu, Hanming, Liu, Ming. A 65-nm 1-Gb NOR floating-gate flash memory with less than 50-ns access time. CHINESE SCIENCE BULLETIN[J]. 2014, 59(29-30): 3935-3942, http://dx.doi.org/10.1007/s11434-014-0517-x.
[398] Huang, Wei, Huang, Bo, Bi, Xinhui, Lin, Qinhao, Liu, Ming, Ren, Zhaofang, Zhang, Guohua, Wang, Xinming, Sheng, Guoying, Fu, Jiamo. Emission of PAHs, NPAHs and OPAHs from residential honeycomb coal briquette combustion. ENERGY & FUELS[J]. 2014, 28(1): 636-642, http://ir.gig.ac.cn:8080/handle/344008/29482.
[399] Chu YuQiong, Zhang ManHong, Huo ZongLiang, Liu Ming. Comparison between N-2 and O-2 anneals on the integrity of an Al2O3/Si3N4/SiO2/Si memory gate stack. CHINESE PHYSICS B[J]. 2014, 23(8): http://www.irgrid.ac.cn/handle/1471x/1092048.
[400] Bi, Chong, Huang, Lin, Long, Shibing, Liu, Qi, Yao, Zhihong, Li, Ling, Huo, Zongliang, Pan, Liqing, Liu, Ming. Thermally assisted magnetic switching of a single perpendicularly magnetized layer induced by an in-plane current. APPLIED PHYSICS LETTERS[J]. 2014, 105(2): http://dx.doi.org/10.1063/1.4890539.
[401] Wang GuoMing, Long ShiBing, Zhang MeiYun, Li Yang, Xu XiaoXin, Liu HongTao, Wang Ming, Sun PengXiao, Sun HaiTao, Liu Qi, Lu HangBing, Yang BaoHe, Liu Ming. Operation methods of resistive random access memory. SCIENCE CHINA-TECHNOLOGICAL SCIENCES[J]. 2014, 57(12): 2295-2304, https://www.webofscience.com/wos/woscc/full-record/WOS:000346239500001.
[402] Lian, Xiaojuan, Miranda, Enrique, Long, Shibing, Perniola, Luca, Liu, Ming, Sune, Jordi. Three-state resistive switching in HfO2-based RRAM. SOLID-STATE ELECTRONICS[J]. 2014, 98: 38-44, http://dx.doi.org/10.1016/j.sse.2014.04.016.
[403] Lian, Xiaojuan, Cartoixa, Xavier, Miranda, Enrique, Perniola, Luca, Rurali, Riccardo, Long, Shibing, Liu, Ming, Sune, Jordi. Multi-scale quantum point contact model for filamentary conduction in resistive random access memories devices. JOURNAL OF APPLIED PHYSICS[J]. 2014, 115(24): http://dx.doi.org/10.1063/1.4885419.
[404] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Banerjee, Writam, Liu, Ming. A unified physical model of Seebeck coefficient in amorphous oxide semiconductor thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000342833700070.
[405] Sun, Haitao, Liu, Qi, Li, Congfei, Long, Shibing, Lv, Hangbing, Bi, Chong, Huo, Zongliang, Li, Ling, Liu, Ming. Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology. ADVANCED FUNCTIONAL MATERIALS[J]. 2014, 24(36): 5679-5686, http://dx.doi.org/10.1002/adfm.201401304.
[406] 傅家谟. Halogenated organic pollutants in particulate matters emitted during recycling of waste printed circuit boards in a typical e-waste workshop of Southern China. CHEMOSPHERE[J]. 2014, 94: 143-150, http://dx.doi.org/10.1016/j.chemosphere.2013.09.065.
[407] Niu, Jiebin, Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect dependence of thermopower in organic semiconductors. PHYSICS LETTERS A[J]. 2014, 378(48): 3579-3581, http://www.irgrid.ac.cn/handle/1471x/1092027.
[408] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Ming. Short-circuit current model of organic solar cells. CHEMICAL PHYSICS LETTERS[J]. 2014, 614(614): 27-30, http://dx.doi.org/10.1016/j.cplett.2014.08.070.
[409] Long, Shibing, Lian, Xiaojuan, Cagli, Carlo, Cartoixa, Xavier, Rurali, Riccardo, Miranda, Enrique, Jimenez, David, Perniola, Luca, Liu, Ming, Sune, Jordi. Quantum-size effects in hafnium-oxide resistive switching. APPLIED PHYSICS LETTERS[J]. 2013, 102(18): http://dx.doi.org/10.1063/1.4802265.
[410] Long, Shibing, Perniola, Luca, Cagli, Carlo, Buckley, Julien, Lian, Xiaojuan, Miranda, Enrique, Pan, Feng, Liu, Ming, Sune, Jordi. Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM. SCIENTIFIC REPORTS[J]. 2013, 3: http://dx.doi.org/10.1038/srep02929.
[411] Liu, Qi, Jun, Sun, Lv, Hangbing, Long, Shibing, Li, Ling, Yin, Kuibo, Wan, Neng, Li, Yingtao, Sun, Litao, Liu, Ming. Response to "Comment on Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM". ADVANCEDMATERIALSnull. 2013, 25(2): 165-167, https://www.webofscience.com/wos/woscc/full-record/WOS:000313262300002.
[412] 霍宗亮, 刘明. In situ electron holography study of charge distribution in high-k charge-trapping memory. NATURE COMMUNICATIONS[J]. 2013, http://www.irgrid.ac.cn/handle/1471x/1092011.
[413] Chou, K I, Cheng, C H, Zheng, Z W, Liu, Ming, Chin, Albert. Ni/GeOx/TiOy/TaN RRAM on Flexible Substrate With Excellent Resistance Distribution. IEEE ELECTRON DEVICE LETTERS[J]. 2013, 34(4): 505-507, http://dx.doi.org/10.1109/LED.2013.2243814.
[414] Han, Yulong, Huo, Zongliang, Li, Xinkai, Chen, Guoxing, Yang, Xiaonan, Zhang, Dong, Wang, Yong, Ye, Tianchun, Liu, Ming. Investigation of Charge Loss Mechanism of Thickness-Scalable Trapping Layer by Variable Temperature Kelvin Probe Force Microscopy. IEEE ELECTRON DEVICE LETTERS[J]. 2013, 34(7): 870-872, http://www.irgrid.ac.cn/handle/1471x/1092009.
[415] Wang, Chenjie, Huo, Zongliang, Liu, Ziyu, Liu, Yu, Cui, Yanxiang, Wang, Yumei, Li, Fanghua, Liu, Ming. Effects of Interfacial Fluorination on Performance Enhancement of High-k-Based Charge Trap Flash Memory. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2013, 52(7): http://ir.iphy.ac.cn/handle/311004/56931.
[416] Yang, Xiaoyi, Long, Shibing, Zhang, Kangwei, Liu, Xiaoyu, Wang, Guoming, Lian, Xiaojuan, Liu, Qi, Lv, Hangbing, Wang, Ming, Xie, Hongwei, Sun, Haitao, Sun, Pengxiao, Sune, Jordi, Liu, Ming. Investigation on the RESET switching mechanism of bipolar Cu/HfO2/Pt RRAM devices with a statistical methodology. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2013, 46(24): http://dx.doi.org/10.1088/0022-3727/46/24/245107.
[417] Lv, Hangbing, Li, Yingtao, Liu, Qi, Long, Shibing, Li, Ling, Liu, Ming. Self-Rectifying Resistive-Switching Device With a-Si/WO3 Bilayer. IEEE ELECTRON DEVICE LETTERS[J]. 2013, 34(2): 229-231, http://dx.doi.org/10.1109/LED.2012.2232640.
[418] Sun, Haitao, Lv, Hangbing, Liu, Qi, Long, Shibing, Wang, Ming, Xie, Hongwei, Liu, Xiaoyu, Yang, Xiaoyi, Niu, Jiebin, Liu, Ming. Overcoming the Dilemma Between RESET Current and Data Retention of RRAM by Lateral Dissolution of Conducting Filament. IEEE ELECTRON DEVICE LETTERS[J]. 2013, 34(7): 873-875, http://dx.doi.org/10.1109/LED.2013.2261795.
[419] Zhang ShuLin, Zhang GuoFeng, Wang YongLiang, Zeng Jia, Qiu Yang, Liu Ming, Kong XiangYan, Xie XiaoMing. A novel superconducting quantum interference device for biomagnetic measurements. CHINESE SCIENCE BULLETIN[J]. 2013, 58(24): 2917-2919, https://www.webofscience.com/wos/woscc/full-record/WOS:000323343800001.
[420] Wang, Hong, Li, Ling, Ji, Zhuoyu, Lu, Congyan, Guo, Jingwei, Wang, Long, Liu, Ming. Contact-Length-Dependent Contact Resistance of Top-Gate Staggered Organic Thin-Film Transistors. IEEE ELECTRON DEVICE LETTERS[J]. 2013, 34(1): 69-71, https://www.webofscience.com/wos/woscc/full-record/WOS:000312834200023.
[421] Li, Ling, Lu, Nianduan, Liu, Ming. Effect of dipole layer on the density-of-states and charge transport in organic thin film transistors. APPLIED PHYSICS LETTERS[J]. 2013, 103(25): https://www.webofscience.com/wos/woscc/full-record/WOS:000329973800085.
[422] Sun, Jun, Liu, Qi, Xie, Hongwei, Wu, Xing, Xu, Feng, Xu, Tao, Long, Shibing, Lv, Hangbing, Li, Yingtao, Sun, Litao, Liu, Ming. In situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory. APPLIED PHYSICS LETTERS[J]. 2013, 102(5): http://dx.doi.org/10.1063/1.4790837.
[423] Jin Lin, Zhang ManHong, Huo ZongLiang, Wang Yong, Yu ZhaoAn, Jiang DanDan, Chen JunNing, Liu Ming. A simple and accurate method for measuring program/erase speed in a memory capacitor structure. CHINESE PHYSICS B[J]. 2013, 22(1): http://dx.doi.org/10.1088/1674-1056/22/1/018501.
[424] Yang, Rong, Zhu, Chenxin, Meng, Jianling, Huo, Zongliang, Cheng, Meng, Liu, Donghua, Yang, Wei, Shi, Dongxia, Liu, Ming, Zhang, Guangyu. Isolated nanographene crystals for nano-floating gate in charge trapping memory. SCIENTIFIC REPORTS[J]. 2013, 3: http://www.irgrid.ac.cn/handle/1471x/1092012.
[425] Saura, Xavier, Miranda, Enrique, Jimenez, David, Long, Shibing, Liu, Ming, Rafi, Joan Marc, Campabadal, Francesca, Sune, Jordi. Threshold Switching and Conductance Quantization in Al/HfO2/Si(p) Structures. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2013, 52(4): http://dx.doi.org/10.7567/JJAP.52.04CD06.
[426] Sun, Zhong, Zhang, Manhong, Huo, Zongliang, Li, Shaobin, Yang, Yun, Qiu, Shengfen, Wu, Hanming, Liu, Ming. Effect of Damage in Source and Drain on the Endurance of a 65-nm-Node NOR Flash Memory. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2013, 60(12): 3989-3995, http://www.irgrid.ac.cn/handle/1471x/1092010.
[427] Syu, YongEn, Chang, TingChang, Lou, JyunHao, Tsai, TsungMing, Chang, KuanChang, Tsai, MingJinn, Wang, YingLang, Liu, Ming, Sze, Simon M. Atomic-level quantized reaction of HfOx memristor. APPLIED PHYSICS LETTERS[J]. 2013, 102(17): http://dx.doi.org/10.1063/1.4802821.
[428] Zhao Qiang, Zhou Maoxiu, Zhang Wei, Liu Qi, Li Xiaofeng, Liu Ming, Dai Yuehua. Effects of interaction between defects on the uniformity of doping HfO2-based RRAM: a first principle study. JOURNAL OF SEMICONDUCTORS[J]. 2013, 34(3): 032001-1, [429] 傅家谟. Chemical composition, diurnal variation and sources of PM2.5 at two industrial sites of South China. ATMOSPHERIC POLLUTION RESEARCH[J]. 2013, 4(3): 298-305, http://dx.doi.org/10.5094/APR.2013.033.
[430] Wang, Wei, Li, Ling, Ji, Zhuoyu, Ye, Tianchun, Lu, Nianduan, Li, Zhigang, Li, Dongmei, Liu, Ming. Modified Transmission Line Model for Bottom-Contact Organic Transistors. IEEE ELECTRON DEVICE LETTERS[J]. 2013, 34(10): 1301-1303, https://www.webofscience.com/wos/woscc/full-record/WOS:000325186600032.
[431] 傅家谟. Hydroxylated PBDEs and brominated phenolic compounds in particulate matters emitted during recycling of waste printed circuit boards in a typical e-waste workshop of South China. ENVIRONMENTAL POLLUTION[J]. 2013, 177: 71-77, http://dx.doi.org/10.1016/j.envpol.2013.01.034.
[432] Guo, Jingwei, Huang, Hui, Zhang, Jianwei, Li, Xiaogan, Huang, Yongqing, Ren, Xiaomin, Ji, Zhuoyu, Liu, Ming. Morphological control of GaAs/InAs radial heterostructure nanowires: From cylindrical to coherent quantum dot structure. JOURNAL OF APPLIED PHYSICS[J]. 2013, 113(11): http://dx.doi.org/10.1063/1.4795503.
[433] Han, Yulong, Huo, Zongliang, Li, Xinkai, Chen, Guoxing, Yang, Xiaonan, Zhang, Dong, Wang, Yong, Ye, Tianchun, Liu, Ming. Investigation of Charge Loss Mechanism of Thickness-Scalable Trapping Layer by Variable Temperature Kelvin Probe Force Microscopy (vol 34, pg 870, 2013). IEEE ELECTRON DEVICE LETTERSnull. 2013, 34(9): 1200-1200, https://www.webofscience.com/wos/woscc/full-record/WOS:000323982500043.
[434] Du, Yuchan, Shi, Lina, Hong, Meihua, Li, Hailiang, Li, Dongmei, Liu, Ming. A surface plasmon resonance biosensor based on gold nanoparticle array. OPTICS COMMUNICATIONS[J]. 2013, 298: 232-236, http://dx.doi.org/10.1016/j.optcom.2013.02.024.
[435] Zhang, Manhong, Liu, Ming. Examination of the application of multiphonon models to the random telegraph signal noise in metal-oxide-semiconductor structures. JOURNAL OF APPLIED PHYSICS[J]. 2013, 113(14): https://www.webofscience.com/wos/woscc/full-record/WOS:000318250600076.
[436] Long, Shibing, Lian, Xiaojuan, Ye, Tianchun, Cagli, Carlo, Perniola, Luca, Miranda, Enrique, Liu, Ming, Sune, Jordi. Cycle-to-Cycle Intrinsic RESET Statistics in HfO2-Based Unipolar RRAM Devices. IEEE ELECTRON DEVICE LETTERS[J]. 2013, 34(5): 623-625, http://dx.doi.org/10.1109/LED.2013.2251314.
[437] Zhang ShuLin, Zhang GuoFeng, Wang YongLiang, Liu Ming, Li Hua, Qiu Yang, Zeng Jia, Kong XiangYan, Xie XiaoMing. Multichannel fetal magnetocardiography using SQUID bootstrap circuit. CHINESE PHYSICS B[J]. 2013, 22(12): https://www.webofscience.com/wos/woscc/full-record/WOS:000329565500081.
[438] 傅家谟. Heavy metals and organic compounds contamination in soil from an e-waste region in South China. ENVIRONMENTAL SCIENCE-PROCESSES & IMPACTS[J]. 2013, 15(5): 919-929, http://www.irgrid.ac.cn/handle/1471x/873231.
[439] Liu, Ming, Li, Zhongpei, Zhai, Xiucai. Peanut Straw Decomposition Products Promoted by Chemical Additives and Their Effect on Enzymatic Activity and Microbial Functional Diversity in Red Soil. COMPOSTSCIENCEUTILIZATION[J]. 2013, 21(2): 76-86, https://www.webofscience.com/wos/woscc/full-record/WOS:000327858500002.
[440] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Ming. Charge carrier relaxation model in disordered organic semiconductors. AIP ADVANCES[J]. 2013, 3(11): http://www.irgrid.ac.cn/handle/1471x/1092001.
[441] Wang, Xinglu, Xiang, Jianguo, Liu, Jiashou, Liu, Ming, Wu, Lang, Murphy, Brian R, Xie, Songguang. Reduced growth and reproductive investment of Hemiculter leucisculus (Cyprinidae) in a reservoir with introduced icefish Neosalanx taihuensis (Salangidae). ENVIRONMENTALBIOLOGYOFFISHES[J]. 2013, 96(7): 895-903, http://www.irgrid.ac.cn/handle/1471x/779995.
[442] Li, Yingtao, Lv, Hangbing, Liu, Qi, Long, Shibing, Wang, Ming, Xie, Hongwei, Zhang, Kangwei, Huo, Zongliang, Liu, Ming. Bipolar one diode-one resistor integration for high-density resistive memory applications. NANOSCALE[J]. 2013, 5(11): 4785-4789, http://dx.doi.org/10.1039/c3nr33370a.
[443] Zhang Dong, Huo Zongliang, Yang Xiaonan, Liu ZiYu, Chen Guoxing, Han Yulong, Sun Zhong, Chu Yuqiong, Wang Chenjie, Yang Baohe, Liu Ming, Lin Q, Claeys C, Huang D, Wu H, Kuo Y, Huang R, Lai K, Zhang Y, Guo Z, Wang S, Liu R, Jiang T, Song P, Lam C, Xiong J, Chen K. Process optimization of HfAlO trapping layer for high performance charge trap flash memory application. CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2013 (CSTIC 2013)null. 2013, 52(1): 967-972, [444] Sun, Zhong, Zhang, Manhong, Huo, Zongliang, Wang, Yong, Liu, Ming. Comparison of tunneling current assisted by neutral and positive traps with finite ranged core-potential. JOURNAL OF APPLIED PHYSICS[J]. 2012, 112(9): https://www.webofscience.com/wos/woscc/full-record/WOS:000311968400085.
[445] Zhang Junyu, Wang Yong, Liu Jing, Zhang Manhong, Xu Zhongguang, Huo Zongliang, Liu Ming. A novel 2 T P-channel nano-crystal memory for low power/high speed embedded NVM applications. 半导体学报[J]. 2012, 33(8): 084006-1, http://lib.cqvip.com/Qikan/Article/Detail?id=42885795.
[446] YANG XiaoNan, ZHANG ManHong, WANG Yong, HUO ZongLiang, LONG ShiBing, ZHANG Bo, LIU Jing, LIU Ming. Analyzing trap generation in silicon-nanocrystal memory devices using capacitance and current measurement. 中国科学:技术科学英文版[J]. 2012, 55(3): 588-593, http://lib.cqvip.com/Qikan/Article/Detail?id=40953799.
[447] 王艳, 刘琦, 吕杭炳, 龙世兵, 王慰, 李颖弢, 张森, 连文泰, 杨建红, 刘明. 掺杂技术对阻变存储器电学性能的改进. 科学通报[J]. 2012, 57(5): 314-319, http://lib.cqvip.com/Qikan/Article/Detail?id=40964502.
[448] 张君宇, 王永, 刘璟, 张满红, 许中广, 霍宗亮, 刘明. A novel 2 T P-channel nano- crystal memory for low power/high speed embedded NVM applications. JOURNAL OF SEMICONDUCTORS[J]. 2012, 33(8): 67-70, http://lib.cqvip.com/Qikan/Article/Detail?id=42885795.
[449] Xie, Changqing, Zhu, Xiaoli, Li, Hailiang, Shi, Lina, Hua, Yilei, Liu, Ming. Toward two-dimensional nanometer resolution hard X-ray differential-interference-contrast imaging using modified photon sieves. OPTICS LETTERS[J]. 2012, 37(4): 749-751, https://www.webofscience.com/wos/woscc/full-record/WOS:000300706500102.
[450] Xu, Zhongguang, Zhu, Chenxin, Huo, Zongliang, Cui, Yanxiang, Wang, Yumei, Li, Fanghua, Liu, Ming. Improved performance of non-volatile memory with Au-Al2O3 core-shell nanocrystals embedded in HfO2 matrix. APPLIED PHYSICS LETTERS[J]. 2012, 100(20): http://ir.iphy.ac.cn/handle/311004/39656.
[451] JIN Lin, ZHANG ManHong, HUO ZongLiang, YU ZhaoAn, JIANG DanDan, WANG Yong, BAI Jie, CHEN JunNing, LIU Ming. Effect of high temperature annealing on the performance of MANOS charge trapping memory. 中国科学:技术科学英文版[J]. 2012, 55(4): 888-893, http://lib.cqvip.com/Qikan/Article/Detail?id=41095894.
[452] Long, Shibing, Cagli, Carlo, Ielmini, Daniele, Liu, Ming, Sune, Jordi. Analysis and modeling of resistive switching statistics. JOURNAL OF APPLIED PHYSICS[J]. 2012, 111(7): http://dx.doi.org/10.1063/1.3699369.
[453] Xie, Hongwei, Liu, Qi, Li, Yingtao, Lv, Hangbing, Wang, Ming, Zhang, Kangwei, Long, Shibing, Liu, Su, Liu, Ming. Effect of low constant current stress treatment on the performance of the Cu/ZrO2/Pt resistive switching device. SEMICONDUCTORSCIENCEANDTECHNOLOGY[J]. 2012, 27(10): http://dx.doi.org/10.1088/0268-1242/27/10/105007.
[454] Zheng, ZhiWei, Ku, TengChieh, Liu, Ming, Chin, Albert. Ohmic contact on n-type Ge using Yb-germanide. APPLIED PHYSICS LETTERS[J]. 2012, 101(22): https://www.webofscience.com/wos/woscc/full-record/WOS:000311967000081.
[455] Zhu, Chenxin, Xu, Zhongguang, Huo, Zongliang, Zheng, Zhiwei, Cui, Yanxiang, Wang, Yumei, Liu, Jing, Li, Fanghua, Liu, Ming. Effect of bandgap engineering on the performance and reliability of a high-k based nanoscale charge trap flash memory. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2012, 45(6): http://ir.iphy.ac.cn/handle/311004/36364.
[456] Wang Yan, Liu Qi, Lu HangBing, Long ShiBing, Wang Wei, Li YingTao, Zhang Sen, Lian WenTai, Yang JianHong, Liu Ming. Improving the electrical performance of resistive switching memory using doping technology. CHINESE SCIENCE BULLETIN[J]. 2012, 57(11): 1235-1240, http://lib.cqvip.com/Qikan/Article/Detail?id=41288882.
[457] 白杰, 霍宗亮, 刘璟, 刘紫玉, 张满红, 杨建红, 刘明. 电荷俘获存储器阻挡层研究进展. 微纳电子技术[J]. 2012, 49(6): 360-368, http://lib.cqvip.com/Qikan/Article/Detail?id=42246773.
[458] WANG Yan, LIU Oi, LU HangBing, LONG ShiBing, WANG Wei, LI YingTao, ZHANG Sen, LIAN WenTai, YANG JianHong, LIU Ming. Improving the electrical performance of resistive switching memory using doping technology. 中国科学通报:英文版[J]. 2012, 57(11): 1235-1240, http://lib.cqvip.com/Qikan/Article/Detail?id=41288882.
[459] Jiang, Dandan, Zhang, Manhong, Huo, Zongliang, Sun, Zhong, Wang, Yong, Zhang, Bo, Chen, Junning, Liu, Ming. Cycling-Induced Peak-Like Interface State Generation in Si-Nanocrystal Memory Devices. IEEE ELECTRON DEVICE LETTERS[J]. 2012, 33(12): 1705-1707, http://dx.doi.org/10.1109/LED.2012.2218567.
[460] Yang XiaoNan, Zhang ManHong, Wang Yong, Huo ZongLiang, Long ShiBing, Zhang Bo, Liu Jing, Liu Ming. Analyzing trap generation in silicon-nanocrystal memory devices using capacitance and current measurement. SCIENCE CHINA-TECHNOLOGICAL SCIENCES[J]. 2012, 55(3): 588-593, http://lib.cqvip.com/Qikan/Article/Detail?id=40953799.
[461] Guo, Jingwei, Huang, Hui, Ding, Yizheng, Ji, Zhuoyu, Liu, Ming, Ren, Xiaomin, Zhang, Xia, Huang, Yongqing. Growth of zinc blende GaAs/AlGaAs heterostructure nanowires on Si substrate by using AlGaAs buffer layers. JOURNAL OF CRYSTAL GROWTH[J]. 2012, 359: 30-34, http://dx.doi.org/10.1016/j.jcrysgro.2012.07.047.
[462] Ji, Zhuoyu, Shang, Liwei, Lu, Congyan, Wang, Long, Guo, Jingwei, Wang, Hong, Li, Dongmei, Liu, Ming. Phototransistors and Photoswitches From an Ultraclosely pi-Stacked Organic Semiconductor. IEEE ELECTRON DEVICE LETTERS[J]. 2012, 33(11): 1619-1621, https://www.webofscience.com/wos/woscc/full-record/WOS:000310387100036.
[463] Liu, Qi, Sun, Jun, Lv, Hangbing, Long, Shibing, Yin, Kuibo, Wan, Neng, Li, Yingtao, Sun, Litao, Liu, Ming. Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM. ADVANCED MATERIALS[J]. 2012, 24(14): 1844-1849, http://dx.doi.org/10.1002/adma.201104104.
[464] 张君宇, 张满红, 霍宗亮, 刘璟, 刘阿鑫, 刘明. 一种大规模闪存灵敏放大器的多相位预充方法. 微电子学[J]. 2012, 42(5): 632-636, http://lib.cqvip.com/Qikan/Article/Detail?id=43598990.
[465] Liu, Ming, Qu, Jiapeng, Wang, Zengli, Wang, Yanling, Zhang, Yanming, Zhang, Zhibin. Behavioral mechanisms of male sterilization on plateau pika in the Qinghai-Tibet plateau. BEHAVIOURAL PROCESSES[J]. 2012, 89(3): 278-285, http://dx.doi.org/10.1016/j.beproc.2011.12.009.
[466] Liu, Ming, Wan, Xinrong, Yin, Yimeng, Li, Yuxia, Sun, Fei, Zhang, Zhibin, Wang, Yanling. Subfertile effects of quinestrol and levonorgestrel in male rats. REPRODUCTION FERTILITY AND DEVELOPMENT[J]. 2012, 24(2): 297-308, http://dx.doi.org/10.1071/RD10221.
[467] Liu, Ming, Qu, Jiapeng, Yang, Min, Wang, Zengli, Wang, Yanling, Zhang, Yanming, Zhang, Zhibin. Effects of quinestrol and levonorgestrel on populations of plateau pikas, Ochotona curzoniae, in the Qinghai-Tibetan Plateau. PEST MANAGEMENT SCIENCE[J]. 2012, 68(4): 592-601, http://dx.doi.org/10.1002/ps.2302.
[468] Zheng, ZhiWei, Cheng, ChunHu, Chou, KunI, Liu, Ming, Chin, Albert. Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrode. APPLIED PHYSICS LETTERS[J]. 2012, 101(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000312490000100.
[469] Radhakrishnan, K V, Li, Yuxuan, Jayalakshmy, K V, Liu, Ming, Murphy, Brian R, Xie, Songguang. Application of otolith shape analysis in identifying different ecotypes of Coilia ectenes in the Yangtze Basin, China. FISHERIES RESEARCH[J]. 2012, 125(-): 156-160, http://dx.doi.org/10.1016/j.fishres.2012.02.020.
[470] Xu, Zhongguang, Zhu, Chenxin, Huo, Zongliang, Zhao, Shengjie, Liu, Ming. Effects of high-temperature O-2 annealing on Al2O3 blocking layer and Al2O3/Si3N4 interface for MANOS structures. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2012, 45(18): https://www.webofscience.com/wos/woscc/full-record/WOS:000303537200004.
[471] 傅家谟. Characterization of PM2.5-bound nitrated and oxygenated PAHs in two industrial sites of South China. ATMOSPHERIC RESEARCH[J]. 2012, 109: 76-83, http://dx.doi.org/10.1016/j.atmosres.2012.01.009.
[472] Zhang, Guo, Wu, Lang, Li, Hongtao, Liu, Ming, Cheng, Fei, Murphy, Brian R, Xie, Songguang. Preliminary evidence of delayed spawning and suppressed larval growth and condition of the major carps in the Yangtze River below the Three Gorges Dam. ENVIRONMENTAL BIOLOGY OF FISHES[J]. 2012, 93(3): 439-447, http://www.irgrid.ac.cn/handle/1471x/390488.
[473] Hu, Dan, Xie, ChangQing, Liu, Ming, Zhang, Yan. High transmission of annular aperture arrays caused by symmetry breaking. PHYSICAL REVIEW A[J]. 2012, 85(4): https://www.webofscience.com/wos/woscc/full-record/WOS:000302400200010.
[474] Jin Lin, Zhang ManHong, Huo ZongLiang, Yu ZhaoAn, Jiang DanDan, Wang Yong, Bai Jie, Chen JunNing, Liu Ming. Effect of high temperature annealing on the performance of MANOS charge trapping memory. SCIENCE CHINA-TECHNOLOGICAL SCIENCES[J]. 2012, 55(4): 888-893, http://lib.cqvip.com/Qikan/Article/Detail?id=41095894.
[475] 梁圣法, 李冬梅, 陈鑫, 詹爽, 刘明. 聚3-己基噻吩及其掺杂TiO2材料对NO2的气敏特性. 传感器与微系统[J]. 2012, 31(7): 55-57,60, http://lib.cqvip.com/Qikan/Article/Detail?id=42506584.
[476] Li, Ling, Lu, Nianduan, Liu, Ming. Influence of mobility on the dissociation probability of electron-hole pair in hopping system. APPLIED PHYSICS LETTERS[J]. 2012, 101(4): https://www.webofscience.com/wos/woscc/full-record/WOS:000306944700102.
[477] Liu, Ming, Sheng, Zhejin, Cai, Lei, Zhao, Kai, Tian, Yu, Fei, Jian. Neuronal conditional knockout of NRSF decreases vulnerability to seizures induced by pentylenetetrazol in mice. ACTA BIOCHIMICA ET BIOPHYSICA SINICA[J]. 2012, 44(6): 476-482, http://lib.cqvip.com/Qikan/Article/Detail?id=42231989.
[478] Wang, Ming, Lv, Hangbing, Liu, Qi, Li, Yingtao, Xu, Zhongguang, Long, Shibing, Xie, Hongwei, Zhang, Kangwei, Liu, Xiaoyu, Sun, Haitao, Yang, Xiaoyi, Liu, Ming. Investigation of One-Dimensional Thickness Scaling on Cu/HfOx/Pt Resistive Switching Device Performance. IEEE ELECTRON DEVICE LETTERS[J]. 2012, 33(11): 1556-1558, http://dx.doi.org/10.1109/LED.2012.2211563.
[479] Xie, Hongwei, Liu, Qi, Li, Yingtao, Lv, Hangbing, Wang, Ming, Liu, Xiaoyu, Sun, Haitao, Yang, Xiaoyi, Long, Shibing, Liu, Su, Liu, Ming. Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device. SEMICONDUCTOR SCIENCE AND TECHNOLOGY[J]. 2012, 27(12): http://dx.doi.org/10.1088/0268-1242/27/12/125008.
[480] 刘阿鑫, 吕杭炳, 刘璟, 潘立阳, 刘明. 一种消除阈值电压影响的高效率电荷泵. 微电子学[J]. 2012, 42(6): 800-802,809, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=4711083&detailType=1.
[481] Zheng ZhiWei, Huo ZongLiang, Zhu ChenXin, Xu ZhongGuang, Liu Jing, Liu Ming. Improved charge trapping flash device with Al2O3/HfSiO stack as blocking layer. CHINESE PHYSICS B[J]. 2011, 20(10): http://lib.cqvip.com/Qikan/Article/Detail?id=39512909.
[482] Shang, Liwei, Ji, Zhuoyu, Wang, Hong, Chen, Yinping, Liu, Xing, Han, Maixin, Liu, Ming. Low-Voltage Multilevel Memory Based on Organic Thin-Film Transistor. IEEE ELECTRON DEVICE LETTERS[J]. 2011, 32(10): 1451-1453, https://www.webofscience.com/wos/woscc/full-record/WOS:000295340300045.
[483] Li, Yingtao, Wang, Yan, Liu, Su, Long, Shibing, Lv, Hangbing, Liu, Qi, Wang, Qin, Zhang, Sen, Liu, Ming. Improvement of Resistive Switching Uniformity in TiOx Films by Nitrogen Annealing. JOURNAL OF THE KOREAN PHYSICAL SOCIETY[J]. 2011, 58(3): L407-L410, https://www.webofscience.com/wos/woscc/full-record/WOS:000288414500001.
[484] 陈映平, 商立伟, 姬濯宇, 王宏, 韩买兴, 刘欣, 刘明. Analytical model for the dispersion of sub-threshold current in organic thin-film transistors. 半导体学报[J]. 2011, 32(11): 55-59, http://lib.cqvip.com/Qikan/Article/Detail?id=39822431.
[485] Li, Yingtao, Long, Shibing, Lv, Hangbing, Liu, Qi, Wang, Yan, Zhang, Sen, Lian, Wentai, Wang, Ming, Zhang, Kangwei, Xie, Hongwei, Liu, Su, Liu, Ming. Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer. NANOTECHNOLOGY[J]. 2011, 22(25): https://www.webofscience.com/wos/woscc/full-record/WOS:000290619900029.
[486] Zhu, Chenxin, Xu, Zhongguang, Huo, Zongliang, Yang, Rong, Zheng, Zhiwei, Cui, Yanxiang, Liu, Jing, Wang, Yumei, Shi, Dongxia, Zhang, Guangyu, Li, Fanghua, Liu, Ming. Investigation on interface related charge trap and loss characteristics of high-k based trapping structures by electrostatic force microscopy. APPLIED PHYSICS LETTERS[J]. 2011, 99(22): http://www.irgrid.ac.cn/handle/1471x/1092057.
[487] Zheng, Zhiwei, Huo, Zongliang, Zhang, Manhong, Zhu, Chenxin, Liu, Jing, Liu, Ming. Improved speed and data retention characteristics in flash memory using a stacked HfO2/Ta2O5 charge-trapping layer. SEMICONDUCTOR SCIENCE AND TECHNOLOGY[J]. 2011, 26(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000295257100016.
[488] 许中广, 霍宗亮, 张满红, 王琴, 刘璟, 朱晨昕, 郑志威, 王晨杰, 刘明. MOS器件栅介质层陷阱的表征方法. 微电子学[J]. 2011, 41(5): 714-721, http://lib.cqvip.com/Qikan/Article/Detail?id=39637502.
[489] Li YingTao, Long ShiBing, Lue HangBing, Liu Qi, Wang Qin, Wang Yan, Zhang Sen, Lian WenTai, Liu Su, Liu Ming. Investigation of resistive switching behaviours in WO3-based RRAM devices. CHINESE PHYSICS B[J]. 2011, 20(1): 589-595, http://lib.cqvip.com/Qikan/Article/Detail?id=36349562.
[490] 赵辉, 闫华晓, 刘明, 张从旺, 秦松. Pyrolytic characteristics and kinetics of the marine green tide macroalgae, Enteromorpha prolifera. 中国海洋湖沼学报:英文版[J]. 2011, 29(5): 996-1001, http://lib.cqvip.com/Qikan/Article/Detail?id=38981778.
[491] 谢常青, 朱效立, 牛洁斌, 李海亮, 刘明, 陈宝钦, 胡媛, 史丽娜. 微纳金属光学结构制备技术及应用. 光学学报[J]. 2011, 31(9): 0900128-1, http://lib.cqvip.com/Qikan/Article/Detail?id=39153662.
[492] Wang Hong, Ji Zhuo-Yu, Shang Li-Wei, Liu Xing-Hua, Peng Ying-Quan, Liu Ming. Top contact organic field effect transistors fabricated using a photolithographic process. 中国物理:英文版[J]. 2011, 20(8): 389-393, http://lib.cqvip.com/Qikan/Article/Detail?id=38906945.
[493] 王艳, 刘琦, 吕杭炳, 龙世兵, 张森, 李颖弢, 连文泰, 杨建红, 刘明. CMOS Compatible Nonvolatile Memory Devices Based on SiO2/Cu/SiO2 Multilayer Films. CHINESE PHYSICS LETTERS[J]. 2011, 28(7): 262-264, https://www.webofscience.com/wos/woscc/full-record/WOS:000293141800070.
[494] 赵珉, 陈宝钦, 牛洁斌, 谢常青, 刘明. 电子束抗蚀剂图形结构的倒塌与粘连. 微纳电子技术[J]. 2011, 48(1): 63-68, http://lib.cqvip.com/Qikan/Article/Detail?id=36411855.
[495] 杨潇楠, 王永, 张满红, 霍宗亮, 刘璟, 张博, 刘明. A novel 2-T structure memory device using a Si nanodot for embedded application. 半导体学报[J]. 2011, 32(12): 86-90, http://lib.cqvip.com/Qikan/Article/Detail?id=40217691.
[496] LIU Xin, JI ZhuoYu, LIU Ming, SHANG LiWei, LI DongMei, DAI YueHua. Advancements in organic nonvolatile memory devices. 中国科学通报:英文版[J]. 2011, 56(30): 3178-3190, http://lib.cqvip.com/Qikan/Article/Detail?id=39631713.
[497] Liu, Xin, Ji, Zhuoyu, Shang, Liwei, Wang, Hong, Chen, Yingping, Han, Maixing, Lu, Congyan, Liu, Ming, Chen, Junning. Organic Programmable Resistance Memory Device Based on Au/Alq(3)/gold-nanoparticle/Alq(3)/Al Structure. IEEE ELECTRON DEVICE LETTERS[J]. 2011, 32(8): 1140-1142, http://www.corc.org.cn/handle/1471x/2155060.
[498] 杨潇楠, 王永, 张满红, 张博, 刘明. 基于硅纳米晶的非挥发存储器制备与存储特性. 半导体技术[J]. 2011, 36(6): 421-424, http://lib.cqvip.com/Qikan/Article/Detail?id=38187211.
[499] Abid, Z, Liu, Ming, Wang, Wei. 3D Integration of CMOL Structures for FPGA Applications. IEEE TRANSACTIONS ON COMPUTERS[J]. 2011, 60(4): 463-471, https://www.webofscience.com/wos/woscc/full-record/WOS:000287668100003.
[500] Long, Shibing, Cagli, Carlo, Ielmini, Daniele, Liu, Ming, Sune, Jordi. Reset Statistics of NiO-Based Resistive Switching Memories. IEEE ELECTRON DEVICE LETTERS[J]. 2011, 32(11): 1570-1572, http://dx.doi.org/10.1109/LED.2011.2163613.
[501] Cheng, Fei, Wu, Qingjiang, Liu, Ming, Radhakrishnan, K V, Murphy, Brian R, Xie, Songguang. Impacts of hatchery release on genetic structure of rock carp Procypris rabaudi in the upper Yangtze River, China. FISHERIES SCIENCE[J]. 2011, 77(5): 765-771, http://www.irgrid.ac.cn/handle/1471x/1759659.
[502] 傅家谟. Polycyclic aromatic hydrocarbons with molecular weight 302 in PM2.5 at two industrial sites in South China. JOURNAL OF ENVIRONMENTAL MONITORING[J]. 2011, 13(9): 2568-2574, http://www.irgrid.ac.cn/handle/1471x/460619.
[503] Jiang, Dandan, Huo, Zongliang, Zhang, Manhong, Jin, Lin, Bai, Jie, Yu, Zhaoan, Liu, Jing, Wang, Qin, Yang, Xiaonan, Wang, Yong, Zhang, Bo, Chen, Junning, Liu, Ming. A novel junction-assisted programming scheme for Si-nanocrystal memory devices with improved performance. SEMICONDUCTOR SCIENCE AND TECHNOLOGY[J]. 2011, 26(11): http://www.corc.org.cn/handle/1471x/2155611.
[504] Liu Ming, Ekschmitt, Klemens, Zhang Bin, Holzhauer, Stephanie I J, Li Zhongpei, Zhang Taolin, Rauch, Sabine. Effect of Intensive Inorganic Fertilizer Application on Microbial Properties in a Paddy Soil of Subtropical China. AGRICULTURAL SCIENCES IN CHINA[J]. 2011, 10(11): 1758-1764, http://dx.doi.org/10.1016/S1671-2927(11)60175-2.
[505] Liu Ming, Li Zhongpei, Zhang Taolin, Jiang Chunyu, Che Yuping. Discrepancy in Response of Rice Yield and Soil Fertility to Long-Term Chemical Fertilization and Organic Amendments in Paddy Soils Cultivated from Infertile Upland in Subtropical China. AGRICULTURAL SCIENCES IN CHINA[J]. 2011, 10(2): 259-266, http://lib.cqvip.com/Qikan/Article/Detail?id=36782318.
[506] 张满红, 霍宗亮, 王琴, 刘明. Material properties and effective work function of reactive sputtered TaN gate electrodes. 半导体学报[J]. 2011, 32(5): 32-35, http://lib.cqvip.com/Qikan/Article/Detail?id=37756149.
[507] Wang Hong, Ji ZhuoYu, Shang LiWei, Liu XingHua, Peng YingQuan, Liu Ming. Top contact organic field effect transistors fabricated using a photolithographic process. CHINESE PHYSICS B[J]. 2011, 20(8): http://lib.cqvip.com/Qikan/Article/Detail?id=38906945.
[508] LIU Ming, Klemens Ekschmitt, ZHANG Bin, Stephanie I. J Holzhauer, LI Zhong-pei, ZHANG Tao-lin, Sabine Rauch. Effect of Intensive Inorganic Fertilizer Application on Microbial Properties in a Paddy Soil of Subtropical China. 中国农业科学:英文版[J]. 2011, 10(11): 1758-1764, http://lib.cqvip.com/Qikan/Article/Detail?id=39982757.
[509] Long, Shibing, Liu, Qi, Lv, Hangbing, Li, Yingtao, Wang, Yan, Zhang, Sen, Lian, Wentai, Zhang, Kangwei, Wang, Ming, Xie, Hongwei, Liu, Ming. Resistive switching mechanism of Ag/ZrO2:Cu/Pt memory cell. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING[J]. 2011, 102(4): 915-919, https://www.webofscience.com/wos/woscc/full-record/WOS:000288253600018.
[510] Shang, Liwei, Ji, Zhuoyu, Wang, Hong, Chen, Yingpin, Lu, Congyan, Liu, Xin, Han, Maixing, Liu, Ming. Threshold Voltage Tuning of Low-Voltage Organic Thin-Film Transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2011, 58(7): 2127-2134, https://www.webofscience.com/wos/woscc/full-record/WOS:000291952900040.
[511] Han MaiXing, Ji ZhuoYu, Shang LiWei, Chen YingPing, Wang Hong, Liu Xin, Li DongMei, Liu Ming. gamma radiation caused graphene defects and increased carrier density. CHINESE PHYSICS B[J]. 2011, 20(8): https://www.webofscience.com/wos/woscc/full-record/WOS:000294810700043.
[512] Wang, Yong, Yang, Xiaonan, Wang, Qin, Long, Shibing, Zhang, Manhong, Huo, Zongliang, Zhang, Bo, Liu, Ming. Optimization of silicon nanocrystals growth process by low pressure chemical vapor deposition for non-volatile memory application. THIN SOLID FILMS[J]. 2011, 519(7): 2146-2149, http://dx.doi.org/10.1016/j.tsf.2010.11.017.
[513] Lian, Wentai, Lv, Hangbing, Liu, Qi, Long, Shibing, Wang, Wei, Wang, Yan, Li, Yingtao, Zhang, Sen, Dai, Yuehua, Chen, Junning, Liu, Ming. Improved Resistive Switching Uniformity in Cu/HfO2/Pt Devices by Using Current Sweeping Mode. IEEE ELECTRON DEVICE LETTERS[J]. 2011, 32(8): 1053-1055, http://dx.doi.org/10.1109/LED.2011.2157990.
[514] 刘欣, 姬濯宇, 刘明, 商立伟, 李冬梅, 代月花. 有机非挥发性存储器的研究进展. 科学通报[J]. 2011, 56(27): 2298-2310, http://lib.cqvip.com/Qikan/Article/Detail?id=39613740.
[515] Zhang KangWei, Long ShiBing, Liu Qi, Lue HangBing, Li YingTao, Wang Yan, Lian WenTai, Wang Ming, Zhang Sen, Liu Ming. Progress in rectifying-based RRAM passive crossbar array. SCIENCE CHINA-TECHNOLOGICAL SCIENCES[J]. 2011, 54(4): 811-818, http://lib.cqvip.com/Qikan/Article/Detail?id=37413951.
[516] Shang LiWei, Ji ZhuoYu, Chen YingPin, Wang Hong, Liu Xin, Han MaiXin, Liu Ming. Low voltage organic devices and circuits with aluminum oxide thin film dielectric layer. SCIENCE CHINA-TECHNOLOGICAL SCIENCES[J]. 2011, 54(1): 95-98, http://lib.cqvip.com/Qikan/Article/Detail?id=36783120.
[517] Jiang, Dandan, Zhang, Manhong, Huo, Zongliang, Wang, Qin, Liu, Jing, Yu, Zhaoan, Yang, Xiaonan, Wang, Yong, Zhang, Bo, Chen, Junning, Liu, Ming. A study of cycling induced degradation mechanisms in Si nanocrystal memory devices. NANOTECHNOLOGY[J]. 2011, 22(25): http://www.corc.org.cn/handle/1471x/2200840.
[518] WANG Hong, PENG YingQuan, JI ZhuoYu, LIU Ming, SHANG LiWei, LIU XingHua. Nonvolatile memory devices based on organic field-effect transistors. 中国科学通报:英文版[J]. 2011, 56(13): 1325-1332, http://lib.cqvip.com/Qikan/Article/Detail?id=37863897.
[519] 周文, 闫学锋, 侯成诚, 李冬梅, 刘明, 陈军宁. 聚苯胺-多壁碳纳米管薄膜SAWNO2传感器. 传感器与微系统[J]. 2011, 30(9): 85-87, http://lib.cqvip.com/Qikan/Article/Detail?id=39155465.
[520] 侯成诚, 闫学锋, 汪幸, 周文, 李冬梅, 刘明, 陈军宁. 一种便携SAW气体传感器的电路设计. 压电与声光[J]. 2011, 33(4): 520-522, http://lib.cqvip.com/Qikan/Article/Detail?id=38843235.
[521] 汪幸, 李冬梅, 刘明, 闫学锋, 陈军宁, 侯诚诚, 周文, 金迪. 室温下ZnPc/MWCNTs敏感膜检测NO2. 压电与声光[J]. 2011, 33(6): 870-873, http://lib.cqvip.com/Qikan/Article/Detail?id=40223955.
[522] 陈映平, 商立伟, 姬濯宇, 王宏, 韩买兴, 刘欣, 刘明. Analytical model for the dispersion of sub-threshold current in organic thin-film transistors. 半导体学报[J]. 2011, 32(11): 114004-1, http://lib.cqvip.com/Qikan/Article/Detail?id=39822431.
[523] SHANG LiWei JI ZhuoYu CHEN YingPin WANG Hong LIU Xin HAN MaiXin LIU Ming. Low voltage organic devices and circuits with aluminum oxide thin film dielectric layer. 中国科学:技术科学英文版[J]. 2011, 54(1): 95-98, http://lib.cqvip.com/Qikan/Article/Detail?id=36783120.
[524] Gao, Nan, Xie, Changqing, Li, Chun, Jin, Chunshui, Liu, Ming. Square optical vortices generated by binary spiral zone plates. APPLIED PHYSICS LETTERS[J]. 2011, 98(15): http://www.irgrid.ac.cn/handle/1471x/442158.
[525] Wang Hong, Peng YingQuan, Ji ZhuoYu, Liu Ming, Shang LiWei, Liu XingHua. Nonvolatile memory devices based on organic field-effect transistors. CHINESE SCIENCE BULLETIN[J]. 2011, 56(13): 1325-1332, http://lib.cqvip.com/Qikan/Article/Detail?id=37863897.
[526] Yang, Xiaonan, Wang, Yong, Zhan, Manhong, Huo, Zongliang, Wang, Qin, Long, Shibing, Liu, Ming. Analysis of trap generation during programming/erasing cycling in silicon nanocrystal memory devices. SEMICONDUCTOR SCIENCE AND TECHNOLOGY[J]. 2011, 26(4): http://10.10.10.126/handle/311049/9269.
[527] Wang, Hong, Ji, Zhuoyu, Shang, Liwei, Chen, Yingping, Han, Maixing, Liu, Xin, Peng, Yingquan, Liu, Ming. Nonvolatile nano-crystal floating gate OFET memory with light assisted program. ORGANIC ELECTRONICS[J]. 2011, 12(7): 1236-1240, http://dx.doi.org/10.1016/j.orgel.2011.03.037.
[528] Zhang, Manhong, Huo, Zongliang, Yu, Zhaoan, Liu, Jing, Liu, Ming. Unification of three multiphonon trap-assisted tunneling mechanisms. JOURNAL OF APPLIED PHYSICS[J]. 2011, 110(11): https://www.webofscience.com/wos/woscc/full-record/WOS:000298254800103.
[529] Yang Xiaonan, Wang Yong, Zhang Manhong, Huo Zongliang, Liu Jing, Zhang Bo, Liu Ming. A novel 2-T structure memory device using a Si nanodot for embedded application. JOURNAL OF SEMICONDUCTORS[J]. 2011, 32(12): 124007-1, http://lib.cqvip.com/Qikan/Article/Detail?id=40217691.
[530] Xu, Zhongguang, Huo, Zongliang, Zhu, Chenxin, Cui, Yanxiang, Wang, Ming, Zheng, Zhiwei, Liu, Jing, Wang, Yumei, Li, Fanghua, Liu, Ming. Performance-improved nonvolatile memory with aluminum nanocrystals embedded in Al2O3 for high temperature applications. JOURNAL OF APPLIED PHYSICS[J]. 2011, 110(10): http://ir.iphy.ac.cn/handle/311004/50667.
[531] 李颖弢, 龙世兵, 吕杭炳, 刘琦, 刘肃, 刘明. 电阻转变型非挥发性存储器概述. 科学通报[J]. 2011, 56(24): 1967-1973, http://lib.cqvip.com/Qikan/Article/Detail?id=38965089.
[532] 张康玮, 龙世兵, 刘琦, 吕杭炳, 李颖弢, 王艳, 连文泰, 王明, 张森, 刘明. 基于整流特性的RRAM无源交叉阵列研究进展. 中国科学:技术科学[J]. 2011, 41(4): 403-411, http://lib.cqvip.com/Qikan/Article/Detail?id=37267580.
[533] Lv, Meirong, Li, Zhongpei, Che, Yuping, Han, F X, Liu, Ming. Soil organic C, nutrients, microbial biomass, and grain yield of rice (Oryza sativa L.) after 18 years of fertilizer application to an infertile paddy soil. BIOLOGY AND FERTILITY OF SOILS[J]. 2011, 47(7): 777-783, http://dx.doi.org/10.1007/s00374-011-0584-y.
[534] He, Yuhui, Scheicher, Ralph H, Grigoriev, Anton, Ahuja, Rajeev, Long, Shibing, Huo, ZongLiang, Liu, Ming. Enhanced DNA Sequencing Performance Through Edge-Hydrogenation of Graphene Electrodes. ADVANCED FUNCTIONAL MATERIALS[J]. 2011, 21(14): 2674-2679, http://dx.doi.org/10.1002/adfm.201002530.
[535] Zhang, Sen, Liu, Qi, Wang, Wei, Lv, Hangbing, Zuo, Qingyun, Wang, Yan, Li, Yingtao, Lian, Wentai, Long, Shibing, Wang, Qin, Liu, Ming. Programming resistive switching memory by a charged capacitor. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING[J]. 2011, 102(4): 1003-1007, https://www.webofscience.com/wos/woscc/full-record/WOS:000288253600031.
[536] Tanachutiwat, Sansiri, Liu, Ming, Wang, Wei. FPGA Based on Integration of CMOS and RRAM. IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS[J]. 2011, 19(11): 2023-2032, https://www.webofscience.com/wos/woscc/full-record/WOS:000294869500008.
[537] Li, Yingtao, Long, Shibing, Lv, Hangbing, Liu, Qi, Wang, Wei, Wang, Qin, Huo, Zongliang, Wang, Yan, Zhang, Sen, Liu, Su, Liu, Ming. Reset Instability in Cu/ZrO2:Cu/Pt RRAM Device. IEEE ELECTRON DEVICE LETTERS[J]. 2011, 32(3): 363-365, https://www.webofscience.com/wos/woscc/full-record/WOS:000287658400047.
[538] Lian WenTai, Long ShiBing, Lue HangBing, Liu Qi, Li YingTao, Zhang Sen, Wang Yan, Huo ZongLiang, Dai YueHua, Chen JunNing, Liu Ming. Approaches for improving the performance of filament-type resistive switching memory. CHINESE SCIENCE BULLETIN[J]. 2011, 56(4-5): 461-464, http://lib.cqvip.com/Qikan/Article/Detail?id=37181485.
[539] Liu Xin, Ji ZhuoYu, Liu Ming, Shang LiWei, Li DongMei, Dai YueHua. Advancements in organic nonvolatile memory devices. CHINESE SCIENCE BULLETIN[J]. 2011, 56(30): 3178-3190, http://lib.cqvip.com/Qikan/Article/Detail?id=39631713.
[540] Li YingTao, Long ShiBing, Liu Qi, Lu HangBing, Liu Su, Liu Ming. An overview of resistive random access memory devices. CHINESE SCIENCE BULLETIN[J]. 2011, 56(28-29): 3072-3078, http://lib.cqvip.com/Qikan/Article/Detail?id=39477388.
[541] LI YingTao, LONG ShiBing, LIU Qi, LU HangBing, LIU Su, LIU Ming. An overview of resistive random access memory devices. 中国科学通报:英文版[J]. 2011, 56(28): 3072-3078, http://lib.cqvip.com/Qikan/Article/Detail?id=39477388.
[542] Zhao Hui, Yan Huaxiao, Liu Ming, Zhang Congwang, Qin Song. Pyrolytic characteristics and kinetics of the marine green tide macroalgae, Enteromorpha prolifera. CHINESE JOURNAL OF OCEANOLOGY AND LIMNOLOGY[J]. 2011, 29(5): 996-1001, http://lib.cqvip.com/Qikan/Article/Detail?id=38981778.
[543] 李颖搜, 龙世兵, 吕杭炳, 刘琦, 刘肃, 刘明. 电阻转变型非挥发性存储器概述一. 科学通报[J]. 2011, 56(24): 1967-1973, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=4269798&detailType=1.
[544] Han MaiXing, Ji ZhuoYu, Shang LiWei, Chen YingPing, Wang Hong, Liu Xin, Li DongMei, Liu Ming. γ radiation caused graphene defects and increased carrier density. 中国物理:英文版[J]. 2011, 20(8): 086102-1, http://lib.cqvip.com/Qikan/Article/Detail?id=38906929.
[545] LIAN WenTai, LONG ShiBing, LU HangBing, LIU Qi, LI YingTao, ZHANG Sen, WANG Yan, HUO ZongLiang, DAI YueHua, CHEN JunNing, LIU Ming. Approaches for improving the performance of filament-type resistive switching memory. 中国科学通报:英文版[J]. 2011, 56(4): 461-464, http://lib.cqvip.com/Qikan/Article/Detail?id=37181485.
[546] 马杰, 谢常青, 叶甜春, 刘明. 自支撑透射光栅的设计、制作和测试. 物理学报[J]. 2010, 2564-2570, http://lib.cqvip.com/Qikan/Article/Detail?id=33431132.
[547] Zuo, Qingyun, Long, Shibing, Yang, Shiqian, Liu, Qi, Shao, Lubing, Wang, Qin, Zhang, Sen, Li, Yingtao, Wang, Yan, Liu, Ming. ZrO2-Based Memory Cell With a Self-Rectifying Effect for Crossbar WORM Memory Application. IEEE ELECTRON DEVICE LETTERS[J]. 2010, 31(4): 344-346, http://www.irgrid.ac.cn/handle/1471x/1092197.
[548] Radhakrishnan, K V, Liu, Ming, He, Wenping, Murphy, Brian R, Xie, Songguang. Otolith retrieval from faeces and reconstruction of prey-fish size for Great Cormorant (Phalacrocorax carbo) wintering at the East Dongting Lake National Nature Reserve, China. ENVIRONMENTAL BIOLOGY OF FISHES[J]. 2010, 89(3-4): 505-512, http://ir.ihb.ac.cn/handle/342005/27502.
[549] 王宏, 彭应全, 姬濯宇, 刘明, 商立伟, 刘兴华. 基于有机场效应晶体管的非挥发性存储器研究进展. 科学通报[J]. 2010, 3177-3185, http://lib.cqvip.com/Qikan/Article/Detail?id=36194578.
[550] Wang, Yan, Lv, Hangbing, Wang, Wei, Liu, Qi, Long, Shibing, Wang, Qin, Huo, Zongliang, Zhang, Sen, Li, Yingtao, Zuo, Qingyun, Lian, Wentai, Yang, Jianhong, Liu, Ming. Highly Stable Radiation-Hardened Resistive-Switching Memory. IEEE ELECTRON DEVICE LETTERS[J]. 2010, 31(12): 1470-1472, https://www.webofscience.com/wos/woscc/full-record/WOS:000284541400038.
[551] 李海亮, 马杰, 朱效立, 吴坚, 谢常青, 陈宝钦, 刘明. 33331/mmX射线全镂空自支撑透射光栅的制备与测试. 微纳电子技术[J]. 2010, 47(3): 174-178, http://lib.cqvip.com/Qikan/Article/Detail?id=33068232.
[552] Liu, Jing, Wang, Qin, Long, Shibing, Zhang, Manhong, Liu, Ming. A metal/Al2O3/ZrO2/SiO2/Si (MAZOS) structure for high-performance non-volatile memory application. SEMICONDUCTOR SCIENCE AND TECHNOLOGY[J]. 2010, 25(5): http://www.irgrid.ac.cn/handle/1471x/1092180.
[553] Liu Ming. "Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using metal nanocrystal cover bottom electrode. ACS Nano. 2010, [554] Hu, Bin, Gu, BenYuan, Dong, BiZhen, Zhang, Yan, Liu, Ming. Various evaluations of a diffractive transmitted field of light through a one-dimensional metallic grating with subwavelength slits. CENTRAL EUROPEAN JOURNAL OF PHYSICS[J]. 2010, 8(3): 448-454, http://ir.iphy.ac.cn/handle/311004/46509.
[555] He, Yuhui, Shao, Lubing, Scheicher, Ralph H, Grigoriev, Anton, Ahuja, Rajeev, Long, Shibing, Ji, Zhuoyu, Yu, Zhaoan, Liu, Ming. Differential conductance as a promising approach for rapid DNA sequencing with nanopore-embedded electrodes. APPLIED PHYSICS LETTERS[J]. 2010, 97(4): http://dx.doi.org/10.1063/1.3467194.
[556] Li, Zhongpei, Liu, Ming, Wu, Xiaochen, Han, Fengxiang, Zhang, Taolin. Effects of long-term chemical fertilization and organic amendments on dynamics of soil organic C and total N in paddy soil derived from barren land in subtropical China. SOIL & TILLAGE RESEARCH[J]. 2010, 106(2): 268-274, http://dx.doi.org/10.1016/j.still.2009.12.008.
[557] Yang, Shiqian, Wang, Qin, Zhang, Manhong, Long, Shibing, Liu, Jing, Liu, Ming. Titanium-tungsten nanocrystals embedded in a SiO2/Al2O3 gate dielectric stack for low-voltage operation in non-volatile memory. NANOTECHNOLOGY[J]. 2010, 21(24): http://www.irgrid.ac.cn/handle/1471x/1092196.
[558] Jia, Jia, Xie, Changqing, Liu, Ming, Wan, Lixi. A super-resolution Fresnel zone plate and photon sieve. OPTICS AND LASERS IN ENGINEERING[J]. 2010, 48(7-8): 760-765, http://dx.doi.org/10.1016/j.optlaseng.2010.03.007.
[559] Liu XingHua, Lu WenSheng, Ji ZhuoYu, Tu DeYu, Zhu XiaoLi, Xie ChangQing, Liu Ming. Fabrication of a 256-bits organic memory by soft x-ray lithography. CHINESE PHYSICS B[J]. 2010, 19(5): http://lib.cqvip.com/Qikan/Article/Detail?id=33681064.
[560] 赵珉, 陈宝钦, 谢常青, 刘明, 牛洁斌. 电子散射参数提取的新方法. 微纳电子技术[J]. 2010, 115-120, http://lib.cqvip.com/Qikan/Article/Detail?id=32938073.
[561] 赵以贵, 刘明, 牛洁斌, 陈宝钦. EBL制备用于气体传感器的SAW延迟线的方法. 压电与声光[J]. 2010, 32(3): 340-342,345, http://lib.cqvip.com/Qikan/Article/Detail?id=34121074.
[562] 刘明. Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode. ACS NANO[J]. 2010, 4(10): 6162-6168, http://www.corc.org.cn/handle/1471x/2205732.
[563] 陈晨, 贾锐, 朱晨昕, 李维龙, 李昊峰, 刘明, 刘新宇, 叶甜春. 异质结及其技术在新型硅基太阳能电池中的应用. 物理[J]. 2010, 123-129, http://lib.cqvip.com/Qikan/Article/Detail?id=33171669.
[564] Wang, Jianfeng, Song, Zhongxiao, Xu, Kewei, Liu, Ming. Rectifying Switching Characteristics of PtanO/Pt Structure Based Resistive Memory. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY[J]. 2010, 10(11): 7088-7091, https://www.webofscience.com/wos/woscc/full-record/WOS:000283621300020.
[565] 李昊峰, 贾锐, 李冬梅, 刘明, 李维龙, 陈晨, 朱晨昕. 声表延迟线仿真算法与版图的自动化设计. 压电与声光[J]. 2010, 32(5): 717-720, http://lib.cqvip.com/Qikan/Article/Detail?id=35516826.
[566] Lu, Yingtao, Long, Shibing, Liu, Qi, Wang, Qin, Zhang, Manhong, Lv, Hangbing, Shao, Lubing, Wang, Yan, Zhang, Sen, Zuo, Qingyun, Liu, Su, Liu, Ming. Nonvolatile multilevel memory effect in Cu/WO3/Pt device structures. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS[J]. 2010, 4(5-6): 124-126, https://www.webofscience.com/wos/woscc/full-record/WOS:000279658900010.
[567] 万青松, 谢常青, 贾佳, 潘一鸣, 刘明, 吴秀龙, 陈军宁. 阵列位相环匀光器. 微纳电子技术[J]. 2010, 121-124, http://lib.cqvip.com/Qikan/Article/Detail?id=32938074.
[568] Zhu, Chenxin, Huo, Zongliang, Xu, Zhongguang, Zhang, Manhong, Wang, Qin, Liu, Jing, Long, Shibing, Liu, Ming. Performance enhancement of multilevel cell nonvolatile memory by using a bandgap engineered high-kappa trapping layer. APPLIED PHYSICS LETTERS[J]. 2010, 97(25): https://www.webofscience.com/wos/woscc/full-record/WOS:000285764300089.
[569] Liu Jiang, Wang Xueqiang, Wang Qin, Wu Dong, Zhang Zhigang, Pan Liyang, Liu Ming. A low-voltage sense amplifier for high-performance embedded flash memory. 半导体学报[J]. 2010, 105001-1, http://lib.cqvip.com/Qikan/Article/Detail?id=35503553.
[570] 刘兴华, 鲁闻生, 姬濯宇, 涂德钰, 朱效立, 谢常青, 刘明. Fabrication of a 256-bits organic memory by soft x-ray lithography. 中国物理:英文版[J]. 2010, 499-504, http://lib.cqvip.com/Qikan/Article/Detail?id=33681064.
[571] Li, Yingtao, Long, Shibing, Zhang, Manhong, Liu, Qi, Shao, Lubing, Zhang, Sen, Wang, Yan, Zuo, Qingyun, Liu, Su, Liu, Ming. Resistive Switching Properties of Au/ZrO2/Ag Structure for Low-Voltage Nonvolatile Memory Applications. IEEE ELECTRON DEVICE LETTERS[J]. 2010, 31(2): 117-119, http://www.irgrid.ac.cn/handle/1471x/1092192.
[572] Wang, Yan, Liu, Qi, Long, Shibing, Wang, Wei, Wang, Qin, Zhang, Manhong, Zhang, Sen, Li, Yingtao, Zuo, Qingyun, Yang, Jianhong, Liu, Ming. Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications. NANOTECHNOLOGY[J]. 2010, 21(4): http://www.irgrid.ac.cn/handle/1471x/1092189.
[573] Xie, Changqing, Zhu, Xiaoli, Shi, Lina, Liu, Ming. Spiral photon sieves apodized by digital prolate spheroidal window for the generation of hard-x-ray vortex. OPTICS LETTERS[J]. 2010, 35(11): 1765-1767, http://www.irgrid.ac.cn/handle/1471x/1092194.
[574] Liu, Qi, Long, Shibing, Wang, Wei, Tanachutiwat, Sansiri, Li, Yingtao, Wang, Qin, Zhang, Manhong, Huo, Zongliang, Chen, Junning, Liu, Ming. Low-Power and Highly Uniform Switching in ZrO2-Based ReRAM With a Cu Nanocrystal Insertion Layer. IEEE ELECTRON DEVICE LETTERS[J]. 2010, 31(11): 1299-1301, http://www.corc.org.cn/handle/1471x/2156446.
[575] Butcher, Brian, He, Xiaoli, Huang, Mengbing, Wang, Yan, Liu, Qi, Lv, Hangbing, Liu, Ming, Wang, Wei. Proton-based total-dose irradiation effects on Cu/HfO2:Cu/Pt ReRAM devices. NANOTECHNOLOGY[J]. 2010, 21(47): http://dx.doi.org/10.1088/0957-4484/21/47/475206.
[576] 柳江, 王雪强, 王琴, 伍冬, 张志刚, 潘立阳, 刘明. A low-voltage sense amplifier for high-performance embedded flash memory. 半导体学报[J]. 2010, 105001-1, http://lib.cqvip.com/Qikan/Article/Detail?id=35503553.
[577] Ma Jie, Xie ChangQing, Ye TianChun, Liu Ming. Design, fabrication and test of x ray freestanding transmission gratings. ACTA PHYSICA SINICA[J]. 2010, 59(4): 2564-2570, http://dx.doi.org/10.7498/aps.59.2564.
[578] 陈千权, 曲家鹏, 刘明, 张堰铭. 高原鼠兔对炔雌醚、左炔诺孕酮和EP-1不育药饵适口性. 动物学杂志[J]. 2010, 87-90, http://lib.cqvip.com/Qikan/Article/Detail?id=34103421.
[579] Liu, Xinghua, Ji, Zhuoyu, Tu, Deyu, Shang, Liwei, Liu, Jiang, Liu, Ming, Xie, Changqing. Organic nonpolar nonvolatile resistive switching in poly(3,4-ethylene-dioxythiophene): Polystyrenesulfonate thin film. ORGANIC ELECTRONICS[J]. 2009, 10(6): 1191-1194, http://dx.doi.org/10.1016/j.orgel.2009.06.007.
[580] Zuo, Qingyun, Long, Shibing, Liu, Qi, Zhang, Sen, Wang, Qin, Li, Yingtao, Wang, Yan, Liu, Ming. Self-rectifying effect in gold nanocrystal-embedded zirconium oxide resistive memory. JOURNAL OF APPLIED PHYSICS[J]. 2009, 106(7): http://www.irgrid.ac.cn/handle/1471x/1092159.
[581] 李海亮, 吴坚, 朱效立, 谢常青, 刘明, 曹磊峰. 2000 l/mm X射线镂空透射光栅的制备研究. 光学学报[J]. 2009, 2650-2655, http://lib.cqvip.com/Qikan/Article/Detail?id=31897574.
[582] Liu Ming, Yin Chongxian, Liu Dekang. Orbit correction algorithm for SSRF fast orbit feedback system. NUCLEAR SCIENCE AND TECHNIQUES[J]. 2009, 20(5): 257-260, http://lib.cqvip.com/Qikan/Article/Detail?id=31877292.
[583] 王宏, 姬濯宇, 刘明, 商立伟, 刘舸, 刘兴华, 柳江, 彭应全. 有机场效应晶体管及其集成电路研究进展. 中国科学:E辑[J]. 2009, 1495-1505, http://lib.cqvip.com/Qikan/Article/Detail?id=31573425.
[584] 赵珉, 陈宝钦, 刘明, 任黎明, 谢常青, 朱效立, 安南. 应用于纳米制造的新型电子束抗蚀剂Calixarene的工艺研究. 纳米技术与精密工程[J]. 2009, 7(3): 275-278, http://lib.cqvip.com/Qikan/Article/Detail?id=30820701.
[585] Chen, Chen, Jia, Rui, Liu, Ming, Li, Weilong, Zhu, Chenxin, Li, Haofeng, Zhang, Peiwen, Xie, Changqing, Wang, Qin, Ye, Tianchun. Silicon nanocrystals synthesized by electron-beam co-evaporation method and their application for nonvolatile memory. THIN SOLID FILMS[J]. 2009, 517(24): 6659-6662, http://dx.doi.org/10.1016/j.tsf.2009.05.004.
[586] 王宏, 姬濯宇, 刘明, 商立伟, 刘舸, 刘兴华, 柳江, 彭应全. 有机场效应晶体管及其集成电路研究进展. 中国科学:E辑[J]. 2009, 1495-1505, http://lib.cqvip.com/Qikan/Article/Detail?id=31573425.
[587] 刘明. Multilevel resistive switching with ionic and metallic filaments. APPLIED PHYSICS LETTERS[J]. 2009, 94(23): 233106.1-233106.3, http://www.irgrid.ac.cn/handle/1471x/1092164.
[588] Hu, Bin, Gu, BenYuan, Zhang, Yan, Liu, Ming. Transmission interference tuned by an external static magnetic field in a two-slit structure. APPLIED PHYSICS LETTERS[J]. 2009, 95(12): http://ir.iphy.ac.cn/handle/311004/46081.
[589] Liu, Qi, Dou, Chunmeng, Wang, Yan, Long, Shibing, Wang, Wei, Liu, Ming, Zhang, Manhong, Chen, Junning. Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device. APPLIED PHYSICS LETTERS[J]. 2009, 95(2): http://www.irgrid.ac.cn/handle/1471x/1092169.
[590] 刘舸, 刘明, 王宏, 商立伟, 姬濯宇, 刘兴华, 柳江. Study of top and bottom contact resistance in one organic field-effect transistor. 中国物理:英文版[J]. 2009, 3530-3534, http://lib.cqvip.com/Qikan/Article/Detail?id=31243332.
[591] LI Dongmei LIU Ming. Improved electromigration reliability of surface acoustic wave devices using Ti/Al-Mo/Ti/Al-Mo electrodes. 稀有金属:英文版[J]. 2009, 28(6): 554-558, http://lib.cqvip.com/Qikan/Article/Detail?id=32339866.
[592] Zhang, Sen, Long, Shibing, Guan, Weihua, Liu, Qi, Wang, Qin, Liu, Ming. Resistive switching characteristics of MnOx-based ReRAM. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2009, 42(5): http://www.irgrid.ac.cn/handle/1471x/1092160.
[593] 李颖弢, 刘明, 龙世兵, 刘琦, 张森, 王艳, 左青云, 王琴, 胡媛, 刘肃. 基于I-V特性的阻变存储器的阻变机制研究. 微纳电子技术[J]. 2009, 46(3): 134-140, http://lib.cqvip.com/Qikan/Article/Detail?id=29764957.
[594] Guan, Weihua, Long, Shibing, Hu, Yuan, Liu, Qi, Wang, Qin, Liu, Ming. Resistance Switching Characteristics of Zirconium Oxide Containing Gold Nanocrystals for Nonvolatile Memory Applications. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY[J]. 2009, 9(2): 723-726, https://www.webofscience.com/wos/woscc/full-record/WOS:000263653300011.
[595] 马杰, 曹磊峰, 谢常青, 吴璇, 李海亮, 朱效立, 刘明, 陈宝钦, 叶甜春. 带支撑结构的大高宽比硬X射线波带片制作. 光电工程[J]. 2009, 36(10): 30-34, http://lib.cqvip.com/Qikan/Article/Detail?id=31864814.
[596] LIU Ming, YIN Chongxiana, LIU Dekang. Orbit correction algorithm for SSRF fast orbit feedback system. 核技术:英文版[J]. 2009, 257-260, http://lib.cqvip.com/Qikan/Article/Detail?id=31877292.
[597] Liu, Zhihui, Liu, Ming, Niu, Gang, Cheng, Yi, Fei, Jian. Genome-wide identification of target genes repressed by the zinc finger transcription factor REST/NRSF in the HEK 293 cell line. ACTA BIOCHIMICA ET BIOPHYSICA SINICA[J]. 2009, 41(12): 1008-1017, http://lib.cqvip.com/Qikan/Article/Detail?id=32493243.
[598] Zhao, Yigui, Liu, Ming, Li, Jingjing, Niu, Jiebin, Li, Dongmei. Design and fabrication of surface acoustic wave delay line for surface acoustic wave chemical-agent sensors. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B[J]. 2009, 27(4): 1821-1824, https://www.webofscience.com/wos/woscc/full-record/WOS:000268535600008.
[599] Ward, T Z, Zhang, X G, Yin, L F, Zhang, X Q, Liu, Ming, Snijders, P C, Jesse, S, Plummer, E W, Cheng, Z H, Dagotto, E, Shen, J. Time-Resolved Electronic Phase Transitions in Manganites. PHYSICAL REVIEW LETTERS[J]. 2009, 102(8): http://www.irgrid.ac.cn/handle/1471x/1092153.
[600] Liu Ge, Liu Ming, Shang Liwei, Tu Deyu, Liu Xinghua, Wang Hong, Liu Jiang. Active layer self-protection process for organic field-effect transistors. 半导体学报[J]. 2009, 45-48, http://lib.cqvip.com/Qikan/Article/Detail?id=31520025.
[601] 朱效立, 谢常青, 张满红, 刘明, 陈宝钦, 潘峰. Fabrication of ll-nm-Wide Silica-Like Lines Using X-Ray Diffraction Exposure. 中国物理快报:英文版[J]. 2009, 26(8): 273-275, http://lib.cqvip.com/Qikan/Article/Detail?id=31135662.
[602] 刘琦, 龙世兵, 管伟华, 张森, 刘明, 陈军宁. Unipolar resistive switching of Au+-implanted ZrO2 films. JOURNAL OF SEMICONDUCTORS[J]. 2009, 3-6, http://lib.cqvip.com/Qikan/Article/Detail?id=30061425.
[603] 刘舸, 刘明, 商立伟, 涂德钰, 刘兴华, 王宏, 柳江. Active layer self-protection process for organic field-effect transistors. JOURNAL OF SEMICONDUCTORS[J]. 2009, 45-48, http://lib.cqvip.com/Qikan/Article/Detail?id=31520025.
[604] Wang Hong, Ji ZhuoYu, Liu Ming, Shang LiWei, Liu Ge, Liu XingHua, Liu Jiang, Peng YingQuan. Advances in organic field-effect transistors and integrated circuits. SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES[J]. 2009, 52(11): 3105-3116, http://www.irgrid.ac.cn/handle/1471x/1092172.
[605] Li Dongmei, Liu Ming. Improved electromigration reliability of surface acoustic wave devices using Ti/Al-Mo/Ti/Al-Mo electrodes. RARE METALS[J]. 2009, 28(6): 554-558, http://lib.cqvip.com/Qikan/Article/Detail?id=32339866.
[606] 刘明. Improvement of resistive switching properties in ZrO2-based ReRAM with implanted Ti ions. IEEE ELECTRON DEVICE LETTERS[J]. 2009, 30(12): 1335-1337, http://www.irgrid.ac.cn/handle/1471x/1092166.
[607] Zhao, YiGui, Liu, Ming, Li, DongMei, Li, JingJing, Niu, JieBin. FEM modeling of SAW organic vapor sensors. SENSORS AND ACTUATORS A-PHYSICAL[J]. 2009, 154(1): 30-34, http://dx.doi.org/10.1016/j.sna.2009.07.014.
[608] Tu, Deyu, Liu, Ming, Wang, Wei, Haruehanroengra, S. 3D CMOS/Molecular Hybrid Circuits. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY[J]. 2009, 9(2): 1015-1018, [609] Chen, Chen, Jia, Rui, Li, Weilong, Li, Haofeng, Ye, Tianchun, Liu, Xinyu, Liu, Ming, Kasai, Seiya, Tamotsu, Hashizume, Wu, Nanjian. Enhanced charge storage characteristics of silicon nanocrystals fabricated by electron-beam coevaporation of Si and SiOx(x=1 or 2). JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B[J]. 2009, 27(6): 2462-2467, http://www.irgrid.ac.cn/handle/1471x/1092175.
[610] 刘璟, 王琴, 龙世兵, 胡媛, 杨仕谦, 郭婷婷, 刘明. 高k介质在浮栅型非挥发性存储器中的应用. 微电子学[J]. 2009, 39(3): 414-419, http://lib.cqvip.com/Qikan/Article/Detail?id=30558321.
[611] 左青云, 刘明, 龙世兵, 王琴, 胡媛, 刘琦, 张森, 王艳, 李颖弢. 阻变存储器及其集成技术研究进展. 微电子学[J]. 2009, 39(4): 546-551, http://lib.cqvip.com/Qikan/Article/Detail?id=31209787.
[612] Liu Qi, Long Shibing, Guan Weihua, Zhang Sen, Liu Ming, Chen Junning. Unipolar resistive switching of Au^+-implanted ZrO2 films. 半导体学报[J]. 2009, 042001-, http://lib.cqvip.com/Qikan/Article/Detail?id=30061425.
[613] Luo, Liang, Liu, Ge, Huang, Liwei, Cao, Xinqiang, Liu, Ming, Fu, Hongbing, Yao, Jiannian. Solution-based patterned growth of rubrene nanocrystals for organic field effect transistors. APPLIED PHYSICS LETTERS[J]. 2009, 95(26): http://www.irgrid.ac.cn/handle/1471x/1092156.
[614] Liu Ge, Liu Ming, Wang Hong, Shang LiWei, Ji ZhuoYu, Liu XingHua, Liu Jiang. Study of top and bottom contact resistance in one organic field-effect transistor. CHINESEPHYSICSB[J]. 2009, 18(8): 3530-3534, http://lib.cqvip.com/Qikan/Article/Detail?id=31243332.
[615] Ji, Zhuoyu, Dong, Huanli, Liu, Ming, Hu, Wenping. Water-Controlled Synthesis of Low-Dimensional Molecular Crystals and the Fabrication of a New Water and Moisture Indicator. NANO RESEARCH[J]. 2009, 2(11): 857-864, http://dx.doi.org/10.1007/s12274-009-9084-x.
[616] 朱晨昕, 贾锐, 陈晨, 李维龙, 李昊峰, 刘明, 刘新宇, 叶甜春. 纳米结构在新型太阳电池中的应用进展. 半导体光电[J]. 2009, 30(3): 333-338, http://lib.cqvip.com/Qikan/Article/Detail?id=30715278.
[617] 李德君, 刘明, 龙世兵, 王琴, 张满红, 刘璟, 杨仕谦, 王永, 杨潇楠, 陈军宁, 代月花. 电荷俘获存储器中俘获层的研究进展. 微纳电子技术[J]. 2009, 46(9): 518-524, http://lib.cqvip.com/Qikan/Article/Detail?id=31677599.
[618] 李昊峰, 贾锐, 李维龙, 陈晨, 刘明. 气体声表面波传感器的研究进展. 微纳电子技术[J]. 2009, 46(12): 715-719, http://lib.cqvip.com/Qikan/Article/Detail?id=32410022.
[619] Zhu XiaoLi, Xie ChangQing, Zhang ManHong, Liu Ming, Chen BaoQin, Pan Feng. Fabrication of 11-nm-Wide Silica-Like Lines Using X-Ray Diffraction Exposure. CHINESE PHYSICS LETTERS[J]. 2009, 26(8): https://www.webofscience.com/wos/woscc/full-record/WOS:000268662800076.
[620] Yang, Yu Chao, Pan, Feng, Liu, Qi, Liu, Ming, Zeng, Fei. Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application. NANO LETTERS[J]. 2009, 9(4): 1636-1643, http://www.irgrid.ac.cn/handle/1471x/1092179.
[621] Li WeiLong, Jia Rui, Liu Ming, Chen Chen, Xie ChangQing, Zhu ChenXin, Li HaoFeng, Zhang PeiWen, Ye TianChun. Fabrication and Characterization of Si Nanocrystals Synthesized by Electron Beam Evaporation of Si and SiO2 Mixture. CHINESE PHYSICS LETTERS[J]. 2009, 26(4): http://lib.cqvip.com/Qikan/Article/Detail?id=29805491.
[622] 靳飞飞, 刘世炳, 朱效立, 谢常青, 刘明. 自聚焦变栅距光栅设计、制作及特性研究. 光电工程[J]. 2009, 36(11): 48-52, http://lib.cqvip.com/Qikan/Article/Detail?id=32190278.
[623] Ji, Zhuoyu, Liu, Ming, Shang, Liwei, Hu, Wenping, Liu, Ge, Liu, Xinghua, Wang, Hong. Optimizing molecular orientation for high performance organic thin film transistors based on titanyl phthalocyanine. JOURNAL OF MATERIALS CHEMISTRY[J]. 2009, 19(31): 5507-5509, http://www.irgrid.ac.cn/handle/1471x/1092177.
[624] Wang Hong, Ji ZhuoYu, Liu Ming, Shang LiWei, Liu Ge, Liu XingHua, Liu Jiang, Peng YingQuan. Advances in organic field-effect transistors and integrated circuits. SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES[J]. 2009, 52(11): 3105-3116, http://www.irgrid.ac.cn/handle/1471x/1092172.
[625] Ma Jie, Xie ChangQing, Liu Ming, Chen BaoQin, Ye TianChun. Design, Fabrication and Test of a Soft X-Ray Even-Order Transmission Grating. CHINESE PHYSICS LETTERS[J]. 2009, 26(9): http://lib.cqvip.com/Qikan/Article/Detail?id=31479089.
[626] 郭婷婷, 刘明, 管伟华, 胡媛, 李志刚, 龙世兵, 陈军宁. 纳米晶浮栅存储器的模拟、制备和电学特性. 微纳电子技术[J]. 2009, 46(2): 70-74, http://lib.cqvip.com/Qikan/Article/Detail?id=29491923.
[627] Shang, Liwei, Liu, Ming, Tu, Deyu, Liu, Ge, Liu, Xinohua, Ji, Zhuoyu. Low-Voltage Organic Field-Effect Transistor With PMMA/ZrO2 Bilayer Dielectric. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2009, 56(3): 370-376, http://www.irgrid.ac.cn/handle/1471x/1092165.
[628] 涂德钰, 姬濯宇, 商立伟, 刘明, 王丛舜, 胡文平. 基于共沉积技术的AgTCNQ的有机双稳态器件. 半导体学报[J]. 2008, 29(1): 50-54, http://lib.cqvip.com/Qikan/Article/Detail?id=26388582.
[629] Liu, Qi, Guan, Weihua, Long, Shibing, Jia, Rui, Liu, Ming, Chen, Junning. Resistive switching memory effect of ZrO2 films with Zr+ implanted. APPLIED PHYSICS LETTERS[J]. 2008, 92(1): http://ir.hfcas.ac.cn/handle/334002/4778.
[630] 涂德钰, 刘明, 商立伟, 刘兴华, 王丛舜. 基于Rotaxane单分子层的双稳态器件研究. 微电子学[J]. 2008, 38(2): 215-217, http://lib.cqvip.com/Qikan/Article/Detail?id=27028835.
[631] Shang, Liwei, Liu, Ming, Tu, Deyu, Zhen, Lijuan, Liu, Ge, Jia, Rui, Li, Liqiang, Hu, Wenping. Controllable and reproducible fabrication of high anisotropic organic field effect transistors. THIN SOLID FILMS[J]. 2008, 516(15): 5093-5097, http://dx.doi.org/10.1016/j.tsf.2007.10.010.
[632] 马杰, 朱效立, 谢常青, 叶甜春, 赵珉, 刘明, 陈宝钦, 朱日宏, 高志山, 马骏. 用于非球面测试的位相型计算全息图制作. 微细加工技术[J]. 2008, 7-8, http://lib.cqvip.com/Qikan/Article/Detail?id=687887483200806004.
[633] Shibing Long, Qi Liu, Sen Zhang, Junning Chen, Ming Liu, Qin Wang, Weihua Guan. Resistance switching of au-imp!anted-zro_2 film for nonvolatile memory application. JOURNAL OF APPLIED PHYSICS[J]. 2008, No.11: 1024-1028, http://www.corc.org.cn/handle/1471x/2200888.
[634] 赵以贵, 刘明, 牛洁斌. SAW化学战剂传感器的研究进展. 传感器与微系统[J]. 2008, 27(9): 1-3, http://lib.cqvip.com/Qikan/Article/Detail?id=28251060.
[635] 朱效立, 谢常青, 赵珉, 陈宝钦, 叶甜春, 牛洁斌, 张庆钊, 刘明. 电子束光刻制备5000 line/mm光栅掩模关键技术研究. 微细加工技术[J]. 2008, 4-5, http://lib.cqvip.com/Qikan/Article/Detail?id=28486460.
[636] 李金儒, 陈宝钦, 刘明, 赵珉. CIF格式转换为PG3600格式中任意多边形切割成矩形的算法研究. 电子器件[J]. 2008, 31(2): 385-388, http://lib.cqvip.com/Qikan/Article/Detail?id=26860571.
[637] 李大勇, 刘明. 采用Al2O3/ITO阳极的有机电致发光器件. 电子器件[J]. 2008, 31(1): 22-24, http://lib.cqvip.com/Qikan/Article/Detail?id=26513595.
[638] Zhen, Lijuan, Shang, Liwei, Liu, Ming, Tu, Deyu, Ji, Zhuoyu, Liu, Xinghua, Liu, Ge, Liu, Jiang, Wang, Hong. Light-induced hysteresis characteristics of copper phthalocyanine organic thin-film transistors. APPLIED PHYSICS LETTERS[J]. 2008, 93(20): https://www.webofscience.com/wos/woscc/full-record/WOS:000261141400062.
[639] Ji Shuoyu, Shang Liwei, Liu Ming, Yu Congshun, Hu Wenping, Tu Deyu. 基于共沉积技术的AgTCNQ的有机双稳态器件. 半导体学报[J]. 2008, 29(1): 50-54, http://lib.cqvip.com/Qikan/Article/Detail?id=26388582.
[640] 王永, 管伟华, 龙世兵, 刘明, 谢常青. 阻变式存储器存储机理. 物理[J]. 2008, 37(12): 870-874, http://lib.cqvip.com/Qikan/Article/Detail?id=28935625.
[641] 刘明. Nonpolar nonvolatile resistive switching in Cu doped ZrO2. IEEE ELECTRON DEVICE LETTERS[J]. 2008, 29(5): 434-437, http://www.irgrid.ac.cn/handle/1471x/1090350.
[642] Guan, Weihua, Liu, Ming, Long, Shibing, Liu, Qi, Wang, Wei. On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt. APPLIED PHYSICS LETTERS[J]. 2008, 93(22): https://www.webofscience.com/wos/woscc/full-record/WOS:000261430600083.
[643] Jia, Jia, Jiang, Ji, Xie, Changqing, Liu, Ming. Photon sieve for reduction of the far-field diffraction spot size in the laser free-space communication system. OPTICS COMMUNICATIONS[J]. 2008, 281(17): 4536-4539, http://dx.doi.org/10.1016/j.optcom.2008.05.029.
[644] 朱效立, 马杰, 谢常青, 叶甜春, 刘明, 曹磊峰, 杨家敏, 张文海. 3333lp/mm X射线透射光栅的研制. 光学学报[J]. 2008, 28(6): 1026-1030, http://lib.cqvip.com/Qikan/Article/Detail?id=27512836.
[645] Zhang QingZhao, Xie ChangQing, Liu Ming, Li Bing, Chen BaoQin, Zhu XiaoLi. Gate oxide punching thru mechanism in plasma dry etching. SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES[J]. 2008, 51(11): 1990-1994, http://www.irgrid.ac.cn/handle/1471x/1090394.
[646] Liu, Ming, Li, Zhongpei, Zhang, Taolin, Wang, Xingxiang. An efficient method for the simultaneous recovery of DNA and RNA from soil microbes in clayish and acidic soils. PHILIPPINE AGRICULTURAL SCIENTIST[J]. 2008, 91(2): 143-149, http://159.226.121.23/handle/0/27653.
[647] Zhen, Lijuan, Guan, Weihua, Shang, Liwei, Liu, Ming, Liu, Ge. Organic thin-film transistor memory with gold nanocrystals embedded in polyimide gate dielectric. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2008, 41(13): http://www.irgrid.ac.cn/handle/1471x/1090357.
[648] 赵珉, 陈宝钦, 刘明, 谢常青, 朱效立. HSQ用于电子束曝光的性能分析. 微细加工技术[J]. 2008, 10-13, http://lib.cqvip.com/Qikan/Article/Detail?id=28486462.
[649] Li, Zhigang, Guan, Weihua, Liu, Ming, Long, Shibing, Jia, Rui, Lv, Jin, Shi, Yi, Zhao, Xinwei. Charge storage characteristics of metal-induced nanocrystalline in erbium-doped amorphous silicon films. THIN SOLID FILMS[J]. 2008, 516(21): 7657-7660, http://dx.doi.org/10.1016/j.tsf.2008.02.009.
[650] 姜骥, 付强, 朱效立, 刘兴华, 徐熙平, 谢常青, 刘明. 基于角谱法的振幅型光子筛的设计和分析. 光子学报[J]. 2008, 37(9): 1734-1738, http://lib.cqvip.com/Qikan/Article/Detail?id=28227345.
[651] Wang, Qin, Jia, Rui, Guan, Weihua, Li, Weilong, Liu, Qi, Hu, Yuan, Long, Shibing, Chen, Baoqin, Liu, Ming, Ye, Tianchun, Lu, Wensheng, Jiang, Long. Comparison of discrete-storage nonvolatile memories: advantage of hybrid method for fabrication of Au nanocrystal nonvolatile memory. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2008, 41(3): http://www.irgrid.ac.cn/handle/1471x/1090306.
[652] Tu, Deyu, Liu, Ming, Shang, Liwei, Liu, Xinghua, Xie, Changqing. Asymmetric electrical bistable behavior of an eicosanoic acid/zirconium oxide bilayer system with rectifying effect. APPLIED PHYSICS LETTERS[J]. 2008, 92(12): https://www.webofscience.com/wos/woscc/full-record/WOS:000254510300086.
[653] Zhang QingZhao, Xie ChangQing, Liu Ming, Li Bing, Chen BaoQin, Zhu XiaoLi. Gate oxide punching thru mechanism in plasma dry etching. SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES[J]. 2008, 51(11): 1990-1994, http://www.irgrid.ac.cn/handle/1471x/1090394.
[654] 商立伟, 刘明, 涂德钰, 甄丽娟, 刘舸. 单次可编程金属-分子-金属器件. 半导体学报[J]. 2008, 29(10): 1928-1931, http://lib.cqvip.com/Qikan/Article/Detail?id=28463812.
[655] Liu, Qi, Guan, Weihua, Long, Shibing, Liu, Ming, Zhang, Sen, Wang, Qin, Chen, Junning. Resistance switching of Au-implanted-ZrO2 film for nonvolatile memory application. JOURNAL OF APPLIED PHYSICS[J]. 2008, 104(11): http://www.irgrid.ac.cn/handle/1471x/1090364.
[656] 张庆钊, 谢常青, 刘明, 李兵, 朱效立, 陈宝钦. ICP等离子体刻蚀系统射频偏压的实验研究. 半导体学报[J]. 2008, 29(5): 980-983, http://lib.cqvip.com/Qikan/Article/Detail?id=27252594.
[657] Shang Liwei, Liu Ming, Tu Deyu, Zhen Lijuan, Liu Ge. 单次可编程金属-分子-金属器件. 半导体学报[J]. 2008, 29(10): 1928-1931, http://lib.cqvip.com/Qikan/Article/Detail?id=28463812.
[658] 赵永涛, 于慧, 马月伟, 刘明. 5·12地震——大熊猫栖息地灾后生态修复重建探讨. 西南民族大学学报:自然科学版[J]. 2008, 34(6): 1083-1085, http://lib.cqvip.com/Qikan/Article/Detail?id=28911209.
[659] 陈宝钦, 赵珉, 吴璇, 牛洁斌, 刘键, 任黎明, 王琴, 朱效立, 徐秋霞, 谢常青, 刘明. 电子束光刻在纳米加工及器件制备中的应用. 微纳电子技术[J]. 2008, 45(12): 683-688, http://lib.cqvip.com/Qikan/Article/Detail?id=29043700.
[660] 李志刚, 龙世兵, 刘明, 王丛舜, 贾锐, 闾锦, 施毅. Charge storage characteristics of hydrogenated nanocrystalline silicon film prepared by rapid thermal annealing. 中国物理:英文版[J]. 2007, 16(3): 795-798, http://lib.cqvip.com/Qikan/Article/Detail?id=23974941.
[661] 李大勇, 刘明, We i Wa n g. 具有容错功能的OLED有源驱动电路. 半导体学报[J]. 2007, 28(9): 1337-1340, http://lib.cqvip.com/Qikan/Article/Detail?id=25373505.
[662] 刘明. Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide. APPLIED PHYSICS LETTERS[J]. 2007, 91(6): 062111.1-062111.3, http://www.irgrid.ac.cn/handle/1471x/1090351.
[663] Tu Deyu, Liu Ming, Shang Liwei, Xie Changqing, Zhu Xiaoli, IEEE. A ZEP520-LOR Bilayer Resist Lift-off Process by E-Beam Lithography for Nanometer Pattern Transfer. 2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, VOL 1-3null. 2007, 628-631, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000261434900141.
[664] Guan, Weihua, Long, Shibing, Liu, Ming, Liu, Qi, Hu, Yuan, Li, Zhigang, Jia, Rui. Modeling of retention characteristics for metal and semiconductor nanocrystal memories. SOLID-STATE ELECTRONICS[J]. 2007, 51(5): 806-811, http://dx.doi.org/10.1016/j.sse.2007.03.017.
[665] 赵珉, 杨清华, 刘明, 陈宝钦. 可制造性设计在纳米SOC中的应用和发展. 微纳电子技术[J]. 2007, 44(6): 282-288, http://lib.cqvip.com/Qikan/Article/Detail?id=24736979.
[666] 张庆钊, 谢常青, 刘明, 李兵, 朱效立. 硅栅干法刻蚀工艺中腔室表面附着物研究. 微细加工技术[J]. 2007, 45-48, http://lib.cqvip.com/Qikan/Article/Detail?id=1000935994.
[667] 薛丽君, 刘明, 王燕, 禡龙, 鲁净, 谢常青, 夏洋. 偏栅Al_xGa_(1-x)N/GaN HEMT的二维模拟与特性分析. 固体电子学研究与进展[J]. 2007, 181-185, http://lib.cqvip.com/Qikan/Article/Detail?id=1000050448.
[668] 叶甜春, 朱效立, 马杰, 曹磊峰, 杨家敏, 谢常青, 刘明, 陈宝钦, 牛洁斌, 张庆钊, 姜骥, 赵珉. 高线密度X射线透射光栅的制作工艺. 半导体学报[J]. 2007, 28(12): 2006-2010, http://lib.cqvip.com/Qikan/Article/Detail?id=26047632.
[669] 管伟华, 刘明, 龙世兵, 李志刚, 刘琦, 胡媛, 贾锐. 纳米晶非挥发性存储器研究进展. 微纳电子技术[J]. 2007, 44(5): 225-230, http://lib.cqvip.com/Qikan/Article/Detail?id=24525724.
[670] 甄丽娟, 刘明, 商立伟, 涂德钰, 刘兴华, 刘舸. 有机半导体薄膜层的图形化方法. 微细加工技术[J]. 2007, 34-38, http://lib.cqvip.com/Qikan/Article/Detail?id=1000936007.
[671] 张庆钊, 谢常青, 刘明, 李兵, 朱效立, 马杰. 90 nm技术节点硅栅的干法刻蚀工艺研究. 微细加工技术[J]. 2007, 44-47, http://lib.cqvip.com/Qikan/Article/Detail?id=1000936037.
[672] 张庆钊, 谢长青, 刘明, 李兵, 朱效立. 90nm硅栅过刻蚀工艺中功率对等离子体性质的影响. 半导体学报[J]. 2007, 28(10): 1611-1614, http://lib.cqvip.com/Qikan/Article/Detail?id=25599645.
[673] Tu, Deyu, Shang, Liwei, Liu, Ming, Wang, Congshun, Jiang, Guiyuan, Song, Yanlin. Electrical bistable behavior of an organic thin film through proton transfer. APPLIED PHYSICS LETTERS[J]. 2007, 90(5): https://www.webofscience.com/wos/woscc/full-record/WOS:000243977300050.
[674] Guan, Weihua, Long, Shibing, Liu, Ming, Li, Zhigang, Hu, Yuan, Liu, Qi. Fabrication and charging characteristics of MOS capacitor structure with metal nanocrystals embedded in gate oxide. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2007, 40(9): 2754-2758, http://www.irgrid.ac.cn/handle/1471x/1090325.
[675] 薛丽君, 夏洋, 刘明, 王燕, 邵雪, 鲁净, 马杰, 谢常青, 余志平. AlGaN/GaN HEMT二维静态模型与模拟. 半导体学报[J]. 2006, 27(2): 298-303, http://lib.cqvip.com/Qikan/Article/Detail?id=21261804.
[676] 易里成荣, 王从舜, 谢常青, 刘明, 叶甜春. DBRTD直流特性的水动力学模拟. 电子器件[J]. 2006, 29(2): 365-368, http://lib.cqvip.com/Qikan/Article/Detail?id=21750980.
[677] 涂德钰, 王丛舜, 刘明. 基于交叉结构的分子电子器件及其逻辑电路的研究进展. 物理[J]. 2006, 35(1): 63-68, http://lib.cqvip.com/Qikan/Article/Detail?id=21073448.
[678] Shang, Liwei, Wang, Congshun, Liu, Ming. Model to explain the anisotropic phenomenon of effective mobility of organic field-effect transistors. APPLIED PHYSICS LETTERS[J]. 2006, 88(20): http://www.irgrid.ac.cn/handle/1471x/1090344.
[679] Wang, Wei, Liu, Ming, Hsu, Andrew. Hybrid nanoelectronics: Future of computer technology. JOURNAL OF COMPUTER SCIENCE AND TECHNOLOGY[J]. 2006, 21(6): 871-886, http://www.irgrid.ac.cn/handle/1471x/1090401.
[680] 陈杰智, 施毅, 濮林, 刘明, 郑有炓. 纳电子器件的少电子输运性质及应用. 固体电子学研究与进[J]. 2006, 26(4): 427-431, http://www.irgrid.ac.cn/handle/1471x/1089894.
[681] 欧毅, 李大勇, 刘明. LCoS芯片p-n结光生电流理论分析. 液晶与显示[J]. 2006, 21(1): 24-28, http://lib.cqvip.com/Qikan/Article/Detail?id=21216237.
[682] 刘明. 微纳加工技术在微纳电子器件领域的应用. 物理[J]. 2006, 35(1): http://lib.cqvip.com/Qikan/Article/Detail?id=2.1073441E7.
[683] Liu MIng, Lu Jing, Ma Jie, Xie Changqing, Yu Zhiping, Xue Lijun, Xia Yang, Wang Yan, Shao Xue. AlGaN/GaN HEMT二维静态模型与模拟. 半导体学报[J]. 2006, 27(2): 298-303, http://lib.cqvip.com/Qikan/Article/Detail?id=21261804.
[684] 张立辉, 李志刚, 刘明, 谢常青, 叶甜春. 单电子晶体管的数值模拟及特性分析. 固体电子学研究与进展[J]. 2006, 26(3): 300-303,363, http://www.irgrid.ac.cn/handle/1471x/1089906.
[685] 王巍, 叶甜春, 刘明, 陈大鹏. 等离子体刻蚀过程的APC技术研究进展. 半导体技术[J]. 2005, 30(12): 1-4, http://lib.cqvip.com/Qikan/Article/Detail?id=20682811.
[686] 李泠, 施毅, 刘明, 右火左斗, 陈杰智. 基于元胞自动机理论的硅各向异性腐蚀模型. 半导体学报[J]. 2005, 26(8): 1671-1675, http://lib.cqvip.com/Qikan/Article/Detail?id=20135734.
[687] 龙世兵, 李志刚, 陈宝钦, 赵新为, 刘明. ZEP520正性电子抗蚀剂的工艺研究. 微细加工技术[J]. 2005, 6-11, http://lib.cqvip.com/Qikan/Article/Detail?id=15421924.
[688] Zhang Lihui, Li Zhigang, Kang Xiaohui, Xie Changqing, Liu Ming. 金属结单电子晶体管的模型建立及实验验证. 半导体学报[J]. 2005, 26(7): 1323-1327, http://lib.cqvip.com/Qikan/Article/Detail?id=18008229.
[689] 张立辉, 李志刚, 康晓辉, 谢常青, 刘明. 金属结单电子晶体管的模型建立及实验验证. 半导体学报[J]. 2005, 26(7): 1323-1327, http://lib.cqvip.com/Qikan/Article/Detail?id=18008229.
[690] Zhang Haiying, Liu Xunchun, Yin Junjian, Chen Liqiang, Wang Runmei, Niu Jiebin, Liu Ming. 锯齿型源漏结构的新型InP基HEMT器件. 半导体学报[J]. 2005, 26(6): 1126-1128, http://lib.cqvip.com/Qikan/Article/Detail?id=15823414.
[691] 陆晶, 陈宝钦, 刘明, 龙世兵, 李泠. 100nm分辨率交替式移相掩模设计. 固体电子学研究与进展[J]. 2005, 25(2): 260-264, http://lib.cqvip.com/Qikan/Article/Detail?id=15822090.
[692] 王巍, 叶甜春, 陈大鹏, 刘明, 李兵. 高密度等离子体刻蚀机中的终点检测技术. 微电子学[J]. 2005, 35(3): 236-239,244, http://lib.cqvip.com/Qikan/Article/Detail?id=15995628.
[693] Kang Xiaohui, Li Zhigang, Liu Ming, Xie Changqing, Chen Baoqin. 一种提取电子束光刻中电子散射参数的新方法. 半导体学报[J]. 2005, 26(3): 455-459, http://lib.cqvip.com/Qikan/Article/Detail?id=15496322.
[694] 刘明, 谢常青, 王丛舜, 龙世兵, 李志钢, 易里成荣, 涂德钰. 纳米加工和纳米电子器件. 微纳电子技术[J]. 2005, 42(9): 393-397, http://lib.cqvip.com/Qikan/Article/Detail?id=20115763.
[695] LI Dongmei, PAN Feng, NIU Jiebin, LIU Ming. Enhancement of the orientation and adhesion of Al films on LiNbO3 with Ni underlayer. 稀有金属:英文版[J]. 2005, 24(4): 363-369, http://lib.cqvip.com/Qikan/Article/Detail?id=20866428.
[696] 康晓辉, 李志刚, 刘明, 谢常青, 陈宝钦. 一种提取电子束光刻中电子散射参数的新方法. 半导体学报[J]. 2005, 26(3): 455-459, http://lib.cqvip.com/Qikan/Article/Detail?id=15496322.
[697] 李冬梅, 王旭波, 潘峰, 牛洁斌, 刘明. Zr过渡层对Al膜微结构与性能的影响. 压电与声光[J]. 2005, 27(2): 152-155, http://lib.cqvip.com/Qikan/Article/Detail?id=15391864.
[698] 张海英, 刘训春, 尹军舰, 陈立强, 王润梅, 牛洁斌, 刘明. 锯齿型源漏结构的新型InP基HEMT器件. 半导体学报[J]. 2005, 26(6): 1126-1128, http://lib.cqvip.com/Qikan/Article/Detail?id=15823414.
[699] 王巍, 叶甜春, 李兵, 陈大鹏, 刘明. 高密度等离子刻蚀机中的等离子体诊断技术. 半导体技术[J]. 2005, 30(3): 13-17, http://lib.cqvip.com/Qikan/Article/Detail?id=11936981.
[700] 李泠, 龙世兵, 刘明, 陈宝钦. 一种基于元胞自动机的显影模型. 微电子学与计算机[J]. 2005, 22(3): 277-280, http://lib.cqvip.com/Qikan/Article/Detail?id=15526892.
[701] 易里成荣, 谢常青, 王从舜, 刘明, 叶甜春. 室温下高峰谷电流比、高峰电流密度的双势垒共振隧穿二极管. 半导体学报[J]. 2005, 26(10): 1871-1874, http://lib.cqvip.com/Qikan/Article/Detail?id=20281944.
[702] 杨清华, 刘明, 陈大鹏, 叶甜春. 高斯电子束曝光系统. 电子工业专用设备[J]. 2005, 34(2): 42-45, http://lib.cqvip.com/Qikan/Article/Detail?id=15055712.
[703] 康晓辉, 张立辉, 范东升, 王德强, 谢常青, 刘明. 193nm光刻散射条技术研究. 微电子学[J]. 2005, 35(4): 360-363, http://lib.cqvip.com/Qikan/Article/Detail?id=18085325.
[704] 薛丽君, 刘明, 王燕, 夏浑, 陈宝钦. AIGaN/GaN异质结极化行为与二维电子气. 半导体技术[J]. 2004, 29(7): 63-65, http://lib.cqvip.com/Qikan/Article/Detail?id=10229489.
[705] 刘明, 陈宝钦, 李兵, 董立军, 杨清华, 陈大鹏, 叶甜春. 电子束散射角限制投影光刻掩模研制. 光电工程[J]. 2004, 31(4): 13-16, http://lib.cqvip.com/Qikan/Article/Detail?id=9623094.
[706] 李俊峰, 杨荣, 赵玉印, 柴淑敏, 刘明, 徐秋霞, 钱鹤. 部分耗尽0.25μm SOI射频nMOSFET. 半导体学报[J]. 2004, 25(9): 1061-1065, http://lib.cqvip.com/Qikan/Article/Detail?id=10541888.
[707] 徐秋霞, 钱鹤, 韩郑生, 刘明, 侯瑞兵, 陈宝钦, 蒋浩杰, 赵玉印, 吴德馨. 高性能42nm栅长CMOS器件. 半导体学报[J]. 2003, 24(B05): 153-160, http://lib.cqvip.com/Qikan/Article/Detail?id=9068840.
[708] 彭英才, 赵新为, 刘明. 纳米量子器件研究的若干前沿问题. 自然杂志[J]. 2003, 25(3): 145-149, http://lib.cqvip.com/Qikan/Article/Detail?id=8005080.
[709] 刘明, 陈宝钦. 下一代光刻技术研究开发情况. 中国集成电路[J]. 2003, http://lib.cqvip.com/Qikan/Article/Detail?id=1000157936.
[710] 石华芬, 张海英, 刘训春, 陈宝钦, 刘明, 王云翔. 一种新的高成品率InP基T型纳米栅制作方法. 半导体学报[J]. 2003, 24(4): 411-415, http://lib.cqvip.com/Qikan/Article/Detail?id=7594873.
[711] 刘明. 纳米级电子束直写曝光的基础工艺. 半导体学报[J]. 2003, [[[20]]](B05): [[[226]]]-[[[228]]], http://lib.cqvip.com/Qikan/Article/Detail?id=9068856.0.
[712] 殷华湘, 王云翔, 刘明, 徐秋霞. 电子束曝光UV3正性抗蚀剂的工艺研究. 微电子学[J]. 2003, 33(6): 485-489, http://lib.cqvip.com/Qikan/Article/Detail?id=8819362.
[713] 刘明, 陈宝钦. 纳米电子束曝光. 半导体学报[J]. 2003, 24(1): 24-28, http://lib.cqvip.com/Qikan/Article/Detail?id=7321320.
[714] 陆晶, 陈宝钦, 刘明, 王云翔, 龙世兵, 李泠. 100nm分辨率的移相掩模技术. 微细加工技术[J]. 2003, 27-32, http://lib.cqvip.com/Qikan/Article/Detail?id=9052814.
[715] 陈宝钦, 任黎明, 刘明, 王云翔, 龙世兵, 陆晶, 李泠. 电子束直写邻近效应校正技术. 半导体学报[J]. 2003, 24(B05): 221-225, http://lib.cqvip.com/Qikan/Article/Detail?id=9068855.
[716] 吴德馨, 钱鹤, 叶甜春, 刘明. 现代微电子技术. 2002, http://159.226.55.106/handle/172511/18294.
[717] 张建宏, 刘明. 电子束曝光技术的应用. 世界产品与技术[J]. 2002, 30-31, http://lib.cqvip.com/Qikan/Article/Detail?id=6255236.
[718] 刘明, 陈宝钦, 刘小伟, 尉林鹏, 吴德馨. 电子束和接触式曝光机的混合曝光技术. 微细加工技术[J]. 2002, 13-17, http://lib.cqvip.com/Qikan/Article/Detail?id=6177862.
[719] 王云翔, 刘明, 陈宝钦, 张建宏, 张卫红. PREVAIL—下一代电子束投影曝光技术. 微细加工技术[J]. 2002, 1-4, http://lib.cqvip.com/Qikan/Article/Detail?id=6495334.
[720] 张建宏, 刘明. 电子束曝光技术发展概况. 世界产品与技术[J]. 2002, 27-29, http://lib.cqvip.com/Qikan/Article/Detail?id=6255235.
[721] 刘明. 电子束曝光技术发展动态. 微电子学[J]. 2000, 30(2): 117-, http://lib.cqvip.com/Qikan/Article/Detail?id=4212775.0.
[722] 刘明, 陈宝钦. 电子曝光中的邻近效应修正技术. 微细加工技术[J]. 2000, 16-20, http://lib.cqvip.com/Qikan/Article/Detail?id=4132805.
[723] 刘明, 陈宝钦. 电子束和接触式曝光机的匹配和混合曝光. 功能材料与器件学报[J]. 2000, 6(4): 416-419, http://lib.cqvip.com/Qikan/Article/Detail?id=4761891.
[724] 彭英才, 刘明. PECVD生长nc—Si:H膜的掺杂特性研究. 河北大学学报:自然科学版[J]. 1999, 19(3): 233-237, http://lib.cqvip.com/Qikan/Article/Detail?id=3652770.
[725] Di Wang, Ruifeng Tang, Huai Lin, Long Liu, Nuo Xu, Yan Sun, Xuefeng Zhao, Ziwei Wang, Dandan Wang, Zhihong Mai, Yongjian Zhou, Nan Gao, Cheng Song, Lijun Zhu, Tom Wu, Ming Liu, Guozhong Xing. Spintronic leaky-integrate-fire spiking neurons with self-reset and winner-takes-all for neuromorphic computing. NATURE COMMUNICATIONS. 14(1): http://dx.doi.org/10.1038/s41467-023-36728-1.
发表著作
(1) 集成电路制造技术, IC manufacturing technology, 化学工业出版社, 2006-03, 第 2 作者
(2) 半导体科学与技术 第九章, Semiconductor Science and Technology;Chapter 9, 科学出版社, 2007-09, 第 1 作者
(3) 纳米结构表面, Nanostructured Surface, Wiley-VCH, 2010-07, 第 1 作者
(4) 纳米半导体器件与技术, nano-semiconductors: devices and technology, 国防工业出版社, 2013-12, 第 1 作者
(5) 新型阻变存储技术, resistive random access memory, 科学出版社, 2014-10, 第 1 作者
(6) 《半导体科学与技术》,第20章《新型非挥发性存储器》, 科学出版社, 2017-06, 第 1 作者
(7) 《半导体科学与技术》,第30章《微纳光刻与微纳米加工技术》, 科学出版社, 2017-06, 第 1 作者

科研活动

   
科研项目
( 1 ) 32nm新型存储器关键工艺解决方案, 主持, 国家级, 2009-01--2011-12
( 2 ) 纳米加工与新型半导体器件研究, 主持, 国家级, 2009-01--2012-12
( 3 ) 纳米结构电荷俘获材料及高密度多值存储基础研究, 主持, 国家级, 2010-01--2014-08
( 4 ) 分子电子学的基础研究, 主持, 国家级, 2006-01--2011-12
( 5 ) 纳米晶浮栅存储器存储材料及关键技术, 主持, 国家级, 2008-01--2010-12
( 6 ) 新型微电子器件集成的基础研究, 主持, 国家级, 2013-01--2015-12
( 7 ) 超高密度存储器三维集成关键技术研究, 主持, 国家级, 2014-01--2018-12
( 8 ) 新型微电子器件集成的基础研究, 主持, 国家级, 2016-01--2018-12
( 9 ) 有机射频电子标签的设计与制备, 主持, 部委级, 2014-07--2019-06
( 10 ) 三维阻变存储器基础研究, 主持, 部委级, 2016-08--2021-07
( 11 ) 阻变存储器材料与器件研究, 主持, 省级, 2017-01--2018-12
( 12 ) 科技北京百名领军人才, 主持, 省级, 2015-01--2017-12
( 13 ) 基于高品质异质结构的信息电子光电器件, 主持, 部委级, 2017-07--2018-06
参与会议
(1) Advanced Semiconductors - Opportunities for Mainland and Hong Kong Collaboration   刘明   2017-11-14
(2)Resistive Random Access Memory and 3D Integration   2017-09-22
(3)High Performance Selector and 3D Integration   刘明   2017-08-20
(4)Reliability issues on oxide-electrolyte-based RRAM   刘明   2017-04-03
(5)High performance selector and 3D integration(Invited)   2016-10-10
(6)3D Vertical Integration of Resistive Switching Memory(Invited)   2016-06-07
(7)Characteristics and Mechanism of Multimode Resistive Switching Behaviors in the Oxide-electrolyte-based RRAM(Invited)   2016-04-06
(8)Improvement of RRAM performances by inserting graphene layer   2016-03-29
(9)Reliability Issues of Oxide Electrolyte Based CBRAM   刘明   2015-10-12
(10)Impact of filament evolution on reliability issues of oxide electrolyte based conductive bridge random access memory   刘明   2015-10-11
(11)Characteristics and mechanism of multimode resistive switching behaviors in the oxide-electrolyte-based RRAM   刘明   2015-09-03
(12)Reliability Issues of Oxide-Electrolyte-Based Conductive Bridge Random Access Memory   刘明   2015-06-28
(13)A Probe of Reliability Issues of Oxide Electrolyte Based CBRAM   刘明   2015-06-01
(14)Future of Memory: Application-driven or Technology-driven, which will dominate in the new era of computing?   刘明   2015-05-17
(15)Resistive Switching Characteristics and Mechanism of Oxide-Electrolyte-Based RRAM   刘明   2015-05-04

指导学生

已指导学生

张庆钊  博士研究生  080903-微电子学与固体电子学  

李大勇  博士研究生  080903-微电子学与固体电子学  

李志刚  博士研究生  080903-微电子学与固体电子学  

薛丽君  博士研究生  080903-微电子学与固体电子学  

李泠  硕士研究生  080903-微电子学与固体电子学  

甄丽娟  硕士研究生  080903-微电子学与固体电子学  

管伟华  硕士研究生  080903-微电子学与固体电子学  

涂德钰  博士研究生  080903-微电子学与固体电子学  

刘舸  博士研究生  080903-微电子学与固体电子学  

赵以贵  博士研究生  080903-微电子学与固体电子学  

商立伟  博士研究生  080903-微电子学与固体电子学  

胡滨  博士研究生  080903-微电子学与固体电子学  

杨仕谦  硕士研究生  080903-微电子学与固体电子学  

柳江  硕士研究生  080903-微电子学与固体电子学  

左青云  硕士研究生  080903-微电子学与固体电子学  

刘璟  硕士研究生  080903-微电子学与固体电子学  

易里成荣  博士研究生  080903-微电子学与固体电子学  

王琴  博士研究生  080903-微电子学与固体电子学  

刘兴华  博士研究生  080903-微电子学与固体电子学  

郑志威  硕士研究生  080903-微电子学与固体电子学  

韩买兴  硕士研究生  080903-微电子学与固体电子学  

陈映平  硕士研究生  080903-微电子学与固体电子学  

李维龙  博士研究生  080903-微电子学与固体电子学  

王永  博士研究生  080903-微电子学与固体电子学  

张森  博士研究生  080903-微电子学与固体电子学  

杨潇楠  博士研究生  080903-微电子学与固体电子学  

刘阿鑫  硕士研究生  080903-微电子学与固体电子学  

许中广  硕士研究生  080903-微电子学与固体电子学  

朱晨昕  博士研究生  080903-微电子学与固体电子学  

王晨杰  博士研究生  080903-微电子学与固体电子学  

张君宇  硕士研究生  080903-微电子学与固体电子学  

余兆安  博士研究生  080903-微电子学与固体电子学  

郑志威  博士研究生  080903-微电子学与固体电子学  

王明  博士研究生  080903-微电子学与固体电子学  

徐光伟  博士研究生  080903-微电子学与固体电子学  

孙海涛  硕士研究生  080903-微电子学与固体电子学  

杨晓一  硕士研究生  430110-集成电路工程  

王龙  博士研究生  080903-微电子学与固体电子学  

褚玉琼  硕士研究生  085208-电子与通信工程  

王伟  博士研究生  080903-微电子学与固体电子学  

罗庆  博士研究生  080903-微电子学与固体电子学  

许晓欣  博士研究生  080903-微电子学与固体电子学  

张美芸  博士研究生  080903-微电子学与固体电子学  

张科科  硕士研究生  080903-微电子学与固体电子学  

现指导学生

刘璟  博士研究生  080903-微电子学与固体电子学  

龚天成  博士研究生  080903-微电子学与固体电子学  

吴全潭  博士研究生  080903-微电子学与固体电子学  

王睿  博士研究生  080903-微电子学与固体电子学  

曹荣荣  博士研究生  080903-微电子学与固体电子学  

张续猛  博士研究生  080903-微电子学与固体电子学  

董航  博士研究生  080903-微电子学与固体电子学  

段新绿  博士研究生  080903-微电子学与固体电子学  

张颖  博士研究生  080903-微电子学与固体电子学  

袁鹏  博士研究生  080903-微电子学与固体电子学  

贾淑静  博士研究生  080903-微电子学与固体电子学  

项飞斌  硕士研究生  080903-微电子学与固体电子学