李泠-中国科学院大学-UCAS

基本信息

李泠男博导中国科学院微电子研究所
电子邮件： lingli@ime.ac.cn
通信地址：中科院微电子所
邮政编码： 100029

招生信息

招生专业

080903-微电子学与固体电子学
085208-电子与通信工程

招生方向

新型纳米存储器件与集成技术
半导体器件模型

教育背景

2004-12--2007-12   维也纳工业大学   博士
2001-09--2004-07   中国科学院微电子研究所   硕士
1997-09--2001-07   电子科技大学   学士

工作经历

2022年6月-至今中国科学院微电子研究所，副所长

2022年9月-至今集成电路制造技术全国重点实验室，主任

2020年6月-2022年6月中科院微电子研究所微电子器件与集成技术重点实验室，主任/研究员

2012年4月-2018年12月中国科学院微电子研究所，研究员

2009年11月-2012年4月韩国庆熙大学，研究教授

2007年12月-2009年11月比利时微电子研究中心（IMEC），博士后

工作简历

2022-09~现在, 集成电路制造技术全国重点实验室, 主任/研究员
2022-06~现在, 中国科学院微电子研究所, 副所长
2020-06~2022-05,中科院微电子研究所微电子器件与集成技术重点实验室, 主任/研究员
2018-12~2022-05,中科院微电子研究所微电子器件与集成技术重点实验室, 副主任/研究员
2009-08~2012-03,韩国庆熙大学, 研究教授
2007-10~2009-07,比利时IMEC研究中心, 高级研究员

社会兼职

2015-05-01-今,国家科技专家库, 评审专家
2014-07-01-今,国家国际科技合作专项项目, 评审专家
2014-07-01-今,International Conference on Computer Aided Design for Thin-Film Transistors (IEEE TFT CAD）, 委员会委员

专利与奖励

专利成果

[1] 李泠, 段新绿, 卢年端, 耿玓, 刘明. 制备共面型铟镓锌氧薄膜晶体管的方法及薄膜晶体管. CN: [[[CN111696868A]]], [[["2020-09-22"]]].
[2] 窦春萌, 李智, 李伟增, 叶望, 王琳方, 安俊杰, 高行行, 郭婧蕊, 徐丽华, 汪令飞, 杨冠华, 李泠. 一种2T动态随机存储器单元多值写入电路及方法. CN: CN116721685A, 2023-09-08.
[3] 李伟伟, 耿玓, 卢年端, 李泠. 适用于柔性衬底的传感单元及其制备方法、多点传感阵列. CN: CN116678524A, 2023-09-01.
[4] 杨冠华, 刘孟淦, 陈楷飞, 卢文栋, 廖福锡, 吴子竞, 卢年端, 李泠. 一种具有漏栅互联结构的IGZO晶体管及其制备方法. CN: CN116632047A, 2023-08-22.
[5] 卢年端, 李泠, 吴全潭, 王嘉玮, 耿玓, 刘明. 一种对检测到的信号进行处理的方法及电路. CN: CN111933197B, 2023-08-11.
[6] 杨冠华, 刘孟淦, 陈楷飞, 卢文栋, 廖福锡, 吴子竞, 卢年端, 李泠. 一种肖特基薄膜晶体管及其制备方法、应用. CN: CN116581162A, 2023-08-11.
[7] 杨冠华, 卢年端, 王桂磊, 赵超, 李泠. 一种薄膜晶体管的制备方法及薄膜晶体管. CN: CN116435182A, 2023-07-14.
[8] 李泠, 杨冠华, 廖福锡. 一种垂直晶体管及制造方法. CN: CN115966608A, 2023-04-14.
[9] 李泠, 杨冠华, 廖福锡. 一种垂直晶体管及制造方法. CN: CN115966607A, 2023-04-14.
[10] 卢年端, 李泠, 姜文峰, 耿玓, 王嘉玮, 李蒙蒙, 刘明. 一种半导体器件及其制备方法. CN: CN111640800B, 2023-04-11.
[11] 王琳方, 窦春萌, 安俊杰, 叶望, 李伟增, 高行行, 李智, 李泠, 刘明. 基于电荷堆叠的逐次逼近型模数转换方法及电路. CN: CN115955243A, 2023-04-11.
[12] 卢年端, 耿玓, 王桂磊, 赵超, 李泠. 一种晶体管及存储器. 2023102125617, 2023-03-07.
[13] 耿玓, 陈倩, 李泠, 卢年端, 刘明. 一种栅极驱动装置、驱动方法、栅极驱动设备和显示系统. CN: CN113380198B, 2023-01-20.
[14] 林雪梅, 李蒙蒙, 卢年端, 李泠, 刘明. 单分子层有机半导体层及有机场效应晶体管的制备方法. CN: CN112951999B, 2023-01-20.
[15] 邢国忠, 林淮, 刘宇, 张凯平, 张康玮, 吕杭炳, 谢常青, 刘琦, 李泠, 刘明. 一种自参考存储结构和存算一体电路. CN: CN112382319B, 2023-01-17.
[16] 卢年端, 马尚, 李泠, 耿玓, 刘琦, 刘明. 一种阻变存储器. CN: CN109585648B, 2023-01-17.
[17] 窦春萌, 安俊杰, 王琳方, 叶望, 李伟增, 高行行, 李泠, 刘明. 一种提高非易失性忆阻器型存储器稳定性的电路及存储器. CN: CN115482858A, 2022-12-16.
[18] 王冲, 史丽娜, 牛洁斌, 尚潇, 李龙杰, 陈生琼, 谢常青, 李泠, 刘明. 一种防伪彩色标签及其制作方法和印刷品的制备方法. CN: CN115249432A, 2022-10-28.
[19] 李泠, 杨冠华, 卢文栋. 一种三维集成电路及其制造方法. CN: CN115172365A, 2022-10-11.
[20] 卢年端, 姜文峰, 李泠, 耿玓, 刘明. 一种气体传感器件的制造、处理气氛确定方法及器件. CN: CN115078630A, 2022-09-20.
[21] 张凯平, 刘宇, 赵盛杰, 路程, 张培文, 李海亮, 胡媛, 谢常青, 李泠. 一种制备纳米图形的方法. CN: CN114988353A, 2022-09-02.
[22] 王琳方, 窦春萌, 叶望, 安俊杰, 李伟增, 高行行, 刘琦, 李泠, 刘明. 基于局部乘-整体加结构的存内计算电路、存储器及设备. CN: CN114863964A, 2022-08-05.
[23] 李泠, 苏悦, 耿玓, 卢年端, 刘明. 一种像素补偿装置及其驱动方法、显示设备. CN: CN114822369A, 2022-07-29.
[24] 耿玓, 苏悦, 李泠, 卢年端, 刘明. 一种μLED单元电路、其发光控制方法和像素装置. CN: CN114783352A, 2022-07-22.
[25] 耿玓, 苏悦, 李泠, 卢年端, 刘明. 一种μLED单元发光电路、其发光控制方法和显示装置. CN: CN114783353A, 2022-07-22.
[26] 陈楷飞, 杨冠华, 李泠, 卢年端. 一种平面晶体管及制造方法. CN: CN114695561A, 2022-07-01.
[27] 史丽娜, 李泠, 刘明, 李龙杰, 尚潇, 王冲, 陈生琼, 牛洁斌, 薛惠文, 胡劲宇. 一种实现结构色的纳米结构及其制备方法. CN: CN114671402A, 2022-06-28.
[28] 史丽娜, 刘明, 李龙杰, 王冲, 尚潇, 陈生琼, 牛洁斌, 薛惠文, 胡劲宇, 李泠. 一种防伪结构及其制备方法. CN: CN114660682A, 2022-06-24.
[29] 刘孟淦, 杨冠华, 李泠, 卢年端. 垂直堆叠的互补场效应晶体管及其制造方法. CN: CN114613772A, 2022-06-10.
[30] 窦春萌, 李伟增, 王琳方, 叶望, 安俊杰, 高行行, 李泠, 刘明. 一种P沟道型逻辑存储单元及非易失性存储器. CN: CN114360594A, 2022-04-15.
[31] 史丽娜, 尚潇, 李龙杰, 陈生琼, 谢常青, 李泠. 防伪结构、防伪结构的制备方法和芯片. CN: CN113763801A, 2021-12-07.
[32] 李泠, 刘东阳, 卢年端, 王嘉玮, 耿玓, 刘明. 一种TFT沟道缺陷态密度的提取方法. CN: CN113658881A, 2021-11-16.
[33] 李泠, 刘东阳, 卢年端, 王嘉玮, 耿玓, 刘明. 一种磁随机存储器数据写入方法及写入装置. CN: CN113643737A, 2021-11-12.
[34] 耿玓, 黄施捷, 苏悦, 李泠, 卢年端, 刘明. 一种像素电路、显示设备及像素补偿方法. CN: CN113487994A, 2021-10-08.
[35] 耿玓, 季寒赛, 李泠, 卢年端, 刘明. 一种栅极驱动电路、驱动方法及GOA电路. CN: CN113380172A, 2021-09-10.
[36] 耿玓, 陈倩, 李泠, 卢年端, 刘明. 一种栅极驱动装置、驱动方法、栅极驱动设备和显示系统. CN: CN113380198A, 2021-09-10.
[37] 耿玓, 苏悦, 李泠, 卢年端, 刘明. 一种显示阵列的驱动电路及驱动方法. CN: CN111445842B, 2021-08-31.
[38] 邢国忠, 林淮, 吴祖恒, 牛洁斌, 姚志宏, 尚大山, 李泠, 刘明. 忆阻器、汉明距离计算方法及存算一体集成应用. CN: CN113129967A, 2021-07-16.
[39] 耿玓, 黄施捷, 苏悦, 季寒赛, 陈倩, 卢年端, 李泠, 刘明. 一种像素电路、像素电路的驱动方法及显示装置. CN: CN113096589A, 2021-07-09.
[40] 尚潇, 史丽娜, 牛洁斌, 李龙杰, 王冲, 谢常青, 李泠, 刘明. 一种基于硅纳米结构的高分辨率结构色超表面及制备方法. CN: CN113013630A, 2021-06-22.
[41] 李泠, 苏悦, 耿玓, 卢年端, 刘明. 一种发光驱动电路、方法及显示驱动电路. CN: CN112992042A, 2021-06-18.
[42] 吴东阳, 毕冲, 卢年端, 李泠, 刘明. 无外场自旋轨道矩驱动磁翻转磁矩的器件及制备方法. CN: CN112968125A, 2021-06-15.
[43] 林雪梅, 李蒙蒙, 卢年端, 李泠, 刘明. 单分子层有机半导体层及有机场效应晶体管的制备方法. CN: CN112951999A, 2021-06-11.
[44] 史丽娜, 王冲, 牛洁斌, 尚潇, 李龙杰, 陈生琼, 谢常青, 李泠, 刘明. 结构色功能纳米结构及其制备方法. CN: CN112850638A, 2021-05-28.
[45] 邢国忠, 王迪, 林淮, 刘龙, 刘宇, 吕杭炳, 谢常青, 李泠, 刘明. 磁电阻器件以及改变其阻态的方法、突触学习模块. CN: CN112864314A, 2021-05-28.
[46] 邢国忠, 林淮, 张锋, 王迪, 刘龙, 谢常青, 李泠, 刘明. 多阻态自旋电子器件、读写电路及存内布尔逻辑运算器. CN: CN112599161A, 2021-04-02.
[47] 邢国忠, 林淮, 刘宇, 张凯平, 张康玮, 吕杭炳, 谢常青, 刘琦, 李泠, 刘明. 一种自参考存储结构和存算一体电路. CN: CN112382319A, 2021-02-19.
[48] 卢年端, 李泠, 姜文峰, 耿玓, 王嘉玮, 刘明. 薄膜晶体管的设计方法. CN: CN112307625A, 2021-02-02.
[49] 李泠, 史学文, 卢年端, 陆丛研, 耿玓, 段新绿, 刘明. 基于氧化锌纳米线的压力传感器及其制备方法. CN: CN112271250A, 2021-01-26.
[50] 卢年端, 李泠, 史学文, 姜文峰, 陆丛研, 耿玓, 刘明. 基于薄膜晶体管的压力传感器及其制备方法. CN: CN112271247A, 2021-01-26.
[51] 卢年端, 李泠, 姜文峰, 史学文, 陆丛研, 耿玓, 刘明. 基于氧化物纳米线的压力传感器结构及其制备方法. CN: CN112271248A, 2021-01-26.
[52] 李泠, 周政, 王嘉玮, 卢年端. 一种单分子层半导体高聚物薄膜的制备方法. CN: CN112062993A, 2020-12-11.
[53] 邢国忠, 林淮, 路程, 刘琦, 吕杭炳, 李泠, 刘明. 自旋电子器件、SOT-MRAM存储单元、存储阵列以及存算一体电路. CN: CN112002722A, 2020-11-27.
[54] 邢国忠, 林淮, 刘宇, 张培文, 谢常青, 李泠, 刘明. 无外磁场定向自旋翻转的SOT-MRAM及阵列. CN: CN111986717A, 2020-11-24.
[55] 卢年端, 李泠, 吴全潭, 姜文峰, 王嘉玮, 耿玓, 刘明. 一种模拟人工感知神经元的方法及电路. CN: CN111985633A, 2020-11-24.
[56] 卢年端, 李泠, 吴全潭, 王嘉玮, 耿玓, 刘明. 一种对检测到的信号进行处理的方法及电路. CN: CN111933197A, 2020-11-13.
[57] 李泠, 段新绿, 卢年端, 耿玓, 刘明. 铟镓锌氧薄膜晶体管的掺杂方法. CN: CN111710609A, 2020-09-25.
[58] 李泠, 段新绿, 卢年端, 耿玓, 刘明. 共面铟镓锌氧薄膜晶体管及其制备方法. CN: CN111682074A, 2020-09-18.
[59] 卢年端, 姜文峰, 李泠, 耿玓, 王嘉玮, 李蒙蒙, 刘明. 一种二维材料超晶格器件及制作方法. CN: CN111653613A, 2020-09-11.
[60] 李泠, 黄施捷, 卢年端, 耿玓, 王嘉玮, 李蒙蒙, 刘明. 一种双栅薄膜晶体管及其制作方法. CN: CN111640673A, 2020-09-08.
[61] 卢年端, 姜文峰, 李泠, 耿玓, 王嘉玮, 李蒙蒙, 刘明. 一种形成金属引线的方法及二维材料器件. CN: CN111640662A, 2020-09-08.
[62] 耿玓, 苏悦, 李泠, 卢年端, 刘明. 可应用于同时发光的像素电路及其驱动方法、显示装置. CN: CN111489696A, 2020-08-04.
[63] 李泠, 苏悦, 耿玓, 卢年端, 刘明. 具有电压补偿功能的像素电路及其驱动方法、显示面板. CN: CN111489697A, 2020-08-04.
[64] 陆丛研, 卢年端, 李泠, 刘宇, 王嘉玮, 耿玓, 刘明. 一种多介质检测传感器及其制作方法. CN: CN111415993A, 2020-07-14.
[65] 耿玓, 苏悦, 李泠, 卢年端, 刘明. 像素补偿电路及其控制方法、显示驱动装置、显示设备. CN: CN111383598A, 2020-07-07.
[66] 卢年端, 段新绿, 刘明, 李泠, 杨冠华, 陆丛研, 史学文, 王嘉玮, 耿玓, 揣喜臣, 姜文峰. 光学晶体管及其制备方法. CN: CN111048622A, 2020-04-21.
[67] Lu, Nianduan, Sun, Pengxiao, Li, Ling, Liu, Ming, Liu, Qi, Lv, Hangbing, Long, Shibing. Method for evaluating thermal effect and reducing thermal crosstalk of three-dimensional integrated resistive switching memory. CN: US10418549(B2), 2019-09-17.
[68] 卢年端, 李泠, 耿玓, 王嘉玮, 刘明. 一种薄膜晶体管及制备方法. CN: CN110190131A, 2019-08-30.
[69] 卢年端, 李泠, 耿玓, 刘明. 纳米级晶体管及其制备方法. CN: CN110176489A, 2019-08-27.
[70] 卢年端, 揣喜臣, 杨冠华, 李泠, 耿玓, 刘明. 场效应晶体管制备方法及场效应晶体管. CN: CN110112073A, 2019-08-09.
[71] 卢年端",null,null,null,"耿玓, 刘明. 场效应晶体管及其制备方法. CN: CN110098256A, 2019-08-06.
[72] 卢年端, 揣喜臣, 杨冠华, 李泠, 耿玓, 刘明. 场效应晶体管制备方法及场效应晶体管. CN: CN110061063A, 2019-07-26.
[73] 卢年端, 姜文峰, 李泠, 耿玓, 刘琦, 吕杭炳, 刘明. 阻变存储器的制备方法. CN: CN109920911A, 2019-06-21.
[74] 卢年端, 姜文峰, 李泠, 耿玓, 刘琦, 吕杭炳, 刘明. 阻变存储器. CN: CN109904314A, 2019-06-18.
[75] 卢年端, 李泠, 揣喜臣, 杨冠华, 耿玓, 刘明. 基于二维材料的晶体管及其制备方法. CN: CN109671781A, 2019-04-23.
[76] 卢年端, 马尚, 李泠",null,null,"刘明. 一种阻变存储器. CN: CN109585648A, 2019-04-05.
[77] 卢年端, 马尚, 李泠, 耿玓, 刘琦, 刘明. 一种阻变存储器. CN: CN109585648A, 2019-04-05.
[78] 卢年端, 马尚, 李泠, 耿玓, 刘明. 一种阻变存储器的制备方法. CN: CN109524544A, 2019-03-26.
[79] 耿玓, 苏悦, 李泠, 刘明. 无边框显示结构及无边框显示器. CN: CN109272957A, 2019-01-25.
[80] 李泠, 苏悦, 耿玓, 卢年端, 刘明. 像素扫描的驱动电路及方法. CN: CN109243357A, 2019-01-18.
[81] 卢年端, 李泠, 耿玓, 刘明. 基于纳米带的晶体管及其制备方法. CN: CN109119485A, 2019-01-01.
[82] 卢年端, 李泠, 耿玓, 刘明. 一种用于测量二维半导体材料的磁阻的装置及其制作方法. CN: CN108807211A, 2018-11-13.
[83] 耿玓, 苏悦, 李泠, 卢年端, 刘明. 像素补偿电路. CN: CN108806606A, 2018-11-13.
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发表论文

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发表著作

（1）有机电子学, organic electronics, springer, 2008-10, 第 1 作者
（2） Thermoelectric effect and application of organic semiconductors, INTECH,, 2016-12, 第 2 作者
（3） The Polaron Effect on Charge Transport Property for Organic Semiconductors, nova science publishers, 2018-07, 第 2 作者

科研活动

科研项目

（ 1 ）高密度存储与磁电子材料关键技术, 主持, 国家级, 2014-01--2017-01
（ 2 ）石墨烯电子与光电子器件研究, 参与, 国家级, 2013-03--2018-12

参与会议

（1）Simulation of doping effect for HfO2-based RRAM based on first-principles calculations   2017-09-07
（2）Temperature-independence Seebeck coefficient induced by energetic disorder in organic semiconductors   Nianduan Lu, Ling Li, and Ming Liu   2016-01-17
（3）A universal mechanism based on the multi-component percolation theory and hopping transport in organic thin film transistors   Ling Li   2015-12-30
（4）Charge Transport in Organic Solar Cells   Ling Li   2015-05-04

指导学生

已指导学生

汪令飞硕士研究生 080903-微电子学与固体电子学

韩志恒硕士研究生 085208-电子与通信工程

宗旨威硕士研究生 080903-微电子学与固体电子学

现指导学生

杨冠华博士研究生 080903-微电子学与固体电子学

苏悦硕士研究生 080903-微电子学与固体电子学

段新绿博士研究生 080903-微电子学与固体电子学

史学文博士研究生 080903-微电子学与固体电子学

刘东阳硕士研究生 080903-微电子学与固体电子学

黄施捷博士研究生 080903-微电子学与固体电子学

周政博士研究生 080903-微电子学与固体电子学

郭婧蕊硕士研究生 080903-微电子学与固体电子学